CN111162775A - H-bridge drive circuit and current sensor based on H-bridge drive circuit - Google Patents

H-bridge drive circuit and current sensor based on H-bridge drive circuit Download PDF

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CN111162775A
CN111162775A CN202010069290.0A CN202010069290A CN111162775A CN 111162775 A CN111162775 A CN 111162775A CN 202010069290 A CN202010069290 A CN 202010069290A CN 111162775 A CN111162775 A CN 111162775A
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current
operational amplifier
electrode
triode
resistor
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陈玲
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/01759—Coupling arrangements; Interface arrangements with a bidirectional operation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/30—Structural combination of electric measuring instruments with basic electronic circuits, e.g. with amplifier
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/18—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using inductive devices, e.g. transformers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/202—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using Hall-effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/25—Arrangements for measuring currents or voltages or for indicating presence or sign thereof using digital measurement techniques
    • G01R19/2506—Arrangements for conditioning or analysing measured signals, e.g. for indicating peak values ; Details concerning sampling, digitizing or waveform capturing
    • G01R19/2509—Details concerning sampling, digitizing or waveform capturing
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/017509—Interface arrangements
    • H03K19/017518—Interface arrangements using a combination of bipolar and field effect transistors [BIFET]

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)

Abstract

The invention discloses an H-bridge driving circuit which comprises a first operational amplifier, a second operational amplifier, N first NPN triodes, N first PNP triodes, N second NPN triodes, N second PNP triodes, first resistors, second resistors and sampling resistors. The invention also discloses a current sensor which comprises a first current measuring module, a second current measuring module and a processor, wherein the first current measuring module comprises the H-bridge driving circuit, the magnetic sensing unit and the coil. The invention realizes high-precision measurement of bidirectional heavy current under the condition of unidirectional power supply, has low cost and improves the functional safety level of the sensor.

Description

H-bridge drive circuit and current sensor based on H-bridge drive circuit
Technical Field
The invention relates to the technical field of sensing, in particular to an H-bridge driving circuit and a current sensor based on the H-bridge driving circuit.
Background
The existing high-precision current measurement technology comprises a closed-loop Hall technology, a closed-loop AMR technology, a closed-loop TMR technology or a closed-loop fluxgate technology. Taking closed-loop hall technology as an example, the device comprises an iron core (and a secondary coil) with an air gap, a hall unit, an operational amplifier, a triode and the like. Since the measured current is in two directions, the compensation coil requires compensation current in two directions, so the sensor requires a bipolar power supply. In order to increase the range of the sensor, the current magnitude or the number of turns of the secondary side compensation coil needs to be increased, so that the size of the coil is increased, and the cost and the size of the sensor are increased.
In the field of automobile parts, a bipolar power supply is hardly provided, so that the traditional closed-loop Hall and closed-loop AMR technologies cannot be applied. Further, the current range required by the automobile is more than 1000 amperes, and the technology needs larger space and higher cost along with the increase of the range and cannot adapt to the requirements of low cost and small size; still further, products employing these technologies do not achieve functional safety nor meet automotive applications.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides an H-bridge drive circuit and a current sensor based on the H-bridge drive circuit.
The invention adopts the following technical scheme for solving the technical problems:
an H-bridge driving circuit comprises a first operational amplifier, a second operational amplifier, N first NPN triodes, N first PNP triodes, N second NPN triodes, N second PNP triodes, first to second resistors and a sampling resistor, wherein N is more than or equal to 1; wherein the content of the first and second substances,
the input end of the first operational amplifier is connected with the output end of the external magnetic-sensing unit, the output end of the first operational amplifier is respectively connected with the base electrode of the first NPN triode and the base electrode of the first PNP triode, the collector electrode of the first NPN triode is connected with the collector electrode of the second NPN triode, the emitter electrode of the first NPN triode is respectively connected with the emitter electrode of the first PNP triode, one end of the first resistor and one end of the external coil, the collector electrode of the first PNP triode is connected with the collector electrode of the second PNP triode, the other end of the first resistor is respectively connected with one end of the second resistor and the first input end of the second operational amplifier, the other end of the second resistor is respectively connected with the emitter electrode of the second NPN triode, the emitter electrode of the second PNP triode and the other end of the coil, the base electrode of the second NPN triode and the base electrode of the second PNP triode, the second input end of the second operational amplifier is connected with an external fixed voltage;
the connection mode of the sampling resistor and other devices in the H-bridge driving circuit is as follows:
one end of the sampling resistor is connected with the collector electrode of the first PNP triode and the collector electrode of the second PNP triode respectively, and the other end of the sampling resistor is connected with the ground; or: one end of the sampling resistor is connected with the collector of the first NPN triode and the collector of the second NPN triode respectively, and the other end of the sampling resistor is connected with the power supply of the H bridge.
An H-bridge driving circuit comprises a first operational amplifier, a second operational amplifier, N first NPN triodes, N first PNP triodes, N first MOSFETs, N second MOSFETs, first to second resistors and a sampling resistor, wherein N is more than or equal to 1; wherein the content of the first and second substances,
the input end of the first operational amplifier is connected with the output end of the external magnetic-sensing unit, the output end of the first operational amplifier is respectively connected with the base electrode of the first NPN triode and the base electrode of the first PNP triode, the collector electrode of the first NPN triode is connected with the source electrode of the first MOSFET, the emitter electrode of the first NPN triode is respectively connected with the emitter electrode of the first PNP triode, one end of the first resistor and one end of the external coil, the collector electrode of the first PNP triode is connected with the source electrode of the second MOSFET, the other end of the first resistor is connected with one end of the second resistor, the first input end of the second operational amplifier is respectively connected, the other end of the second resistor is respectively connected with the drain electrode of the first MOSFET, the drain electrode of the second MOSFET and the other end of the coil, the grid electrode of the first MOSFET and the grid electrode of the second MOSFET are respectively connected with the output end of the second operational amplifier, and the second input end of the second operational amplifier is connected with an external fixed voltage;
the connection mode of the sampling resistor and other devices in the H-bridge driving circuit is as follows:
one end of the sampling resistor is connected with the collector of the first PNP triode and the source of the second MOSFET respectively, and the other end of the sampling resistor is connected with the ground; or: one end of the sampling resistor is connected with a collector electrode of the first NPN triode and a source electrode of the first MOSFET respectively, and the other end of the sampling resistor is connected with a power supply of the H bridge.
A current sensor comprising a first current measurement module, a second current measurement module and a processor, the first current measurement module comprising the H-bridge drive circuit of claim 1 or 2, a magneto-sensitive unit and a coil; wherein the content of the first and second substances,
the range of the first current measuring module is smaller than that of the second current measuring module;
a first current measuring module for measuring when-Ia is less than or equal to I2When Ia is less than or equal to Ia, the current measurement result I1Is output through a processor, wherein1,I2The current measurement results are respectively the measurement results of the first current measurement module and the second current measurement module, and Ia is a current threshold value;
a second current measuring module integrated with two independent current measuring chips for I2<Ia or Ia<I2Measurement of the current I2Outputting through a processor;
the first current measuring module and the second current measuring module are packaged in the same shell.
As a further optimization scheme of the current sensor, the output of the magnetic sensing unit, the output of the first operational amplifier and the output of the second operational amplifier in the H-bridge circuit are monitored in real time or partially through the processor, the magnitude and the direction of the outputs are compared with a set range, if the magnitudes and the direction of the outputs exceed the range, the first current measuring module breaks down, and a fault code or a fault signal is output through the single chip microcomputer.
As a further optimized scheme of the current sensor, the current sensor further comprises a sensor shell, wherein the sensor shell comprises a copper bar which is injected or installed in advance, a hole is formed in the copper bar, and the copper bar is bent to be close to one side of the sensor shell; the second current measuring module comprises two current measuring chips, and the current measuring chips enter the holes of the copper bar and measure the size and the direction of a circuit in the copper bar; the copper bar is provided with two mounting holes along the current flow direction.
Compared with the prior art, the invention adopting the technical scheme has the following technical effects:
(1) the sensor realizes high-precision measurement of bidirectional current under the condition of power supply of a unidirectional power supply;
(2) functional safety is improved with lower cost;
(3) realizing large-range measurement, small size and low cost.
Drawings
Fig. 1 is a schematic diagram of the operation of a closed loop hall current sensor.
Fig. 2 is a schematic block diagram of the present invention.
Figure 3 is an overall construction scheme 1 of the present invention.
Fig. 4 is a second current measurement module in the sensor scheme.
Fig. 5 is a circuit diagram of a first current measuring module in the first embodiment.
FIG. 6 is a control block diagram of a first current measurement module of the scheme.
Fig. 7 is a block configuration scheme 2.
Fig. 8 is a second current measuring module structure in the overall structure scheme 2.
Fig. 9 shows a second embodiment of the H-bridge driver circuit.
Detailed Description
The technical scheme of the invention is further explained in detail by combining the attached drawings:
the invention provides an H-bridge driving circuit, which comprises a first operational amplifier OP1, a second operational amplifier OP2, N first NPN triodes T1, N first PNP triodes T2, N second NPN triodes T3, N second PNP triodes T4, first to second resistors R1-R2 and a sampling resistor Rs, wherein N is more than or equal to 1; wherein the content of the first and second substances,
an input end of the first operational amplifier OP1 is connected to an output end of the external magneto-dependent unit, an output end of the first operational amplifier OP1 is connected to a base of the first NPN transistor T1 and a base of the first PNP transistor T2, respectively, a collector of the first NPN transistor T1 is connected to a collector of the second NPN transistor T3, an emitter of the first NPN transistor T1 is connected to an emitter of the first PNP transistor T2, one end of the first resistor R1, and one end of the external coil, respectively, a collector of the first NPN transistor T2 is connected to a collector of the second NPN transistor T4, the other end of the first resistor R1 is connected to one end of the second resistor, and a first input end of the second operational amplifier OP2, the other end of the second resistor is connected to an emitter of the second NPN transistor T3, an emitter of the second PNP transistor T4, and the other end of the coil, respectively, a base of the second transistor T3 and a base of the second transistor T4 are connected to an output end of the second NPN amplifier OP2, the second input end of the second operational amplifier is connected with an external fixed voltage Ref 2;
the connection mode of the sampling resistor and other devices in the H-bridge driving circuit is as follows:
one end of the sampling resistor is respectively connected with the collector electrode of the first PNP triode T2 and the collector electrode of the second PNP triode T4, and the other end of the sampling resistor is connected with the ground; or: one end of the sampling resistor Rs is connected with the collector of the first NPN triode T1 and the collector of the second NPN triode T3 respectively, and the other end of the sampling resistor Rs is connected with the power supply of the H bridge.
An H-bridge driving circuit comprises a first operational amplifier OP1, a second operational amplifier OP2, N first NPN triodes T1, N first PNP triodes T2, N first MOSFETs T3, N second MOSFETs T4, first to second resistors R1-R2 and a sampling resistor Rs, wherein N is more than or equal to 1; wherein the content of the first and second substances,
an input end of a first operational amplifier OP1 is connected with an output end of an external magnetic sensing unit, an output end of a first operational amplifier OP1 is connected with a base of a first NPN triode T1 and a base of a first PNP triode T2 respectively, a collector of the first NPN triode T1 is connected with a source of a first MOSFET T3, an emitter of the first NPN triode T1 is connected with an emitter of a first PNP triode T2, one end of a first resistor R1 and one end of an external coil respectively, a collector of the first PNP triode T2 is connected with a source of a second MOSFET T4, the other end of the first resistor R1 is connected with one end of a second resistor R2 and a first input end of a second operational amplifier T3, the drain of the second MOSFET T4 and the other end of the coil respectively, a gate of the first MOSFET T3 and the gate of the second MOSFET T4 are connected with an output end of the second operational amplifier OP2 respectively, the second input end of the second operational amplifier is connected with an external fixed voltage Ref 2;
the connection mode of the sampling resistor and other devices in the H-bridge driving circuit is as follows:
one end of the sampling resistor is connected with the collector of the first PNP triode T2 and the source of the second MOSFET T4 respectively, and the other end of the sampling resistor is connected with the ground; or: one end of the sampling resistor Rs is connected to the collector of the first NPN transistor T1 and the source of the first MOSFET T3, and the other end of the sampling resistor Rs is connected to the power supply of the H-bridge.
A current sensor comprises a first current measuring module, a second current measuring module and a processor, wherein the first current measuring module comprises an H-bridge driving circuit, a magneto-dependent unit and a coil; wherein the content of the first and second substances,
the range of the first current measuring module is smaller than that of the second current measuring module;
a first current measuring module for measuring when-Ia is less than or equal to I2When Ia is less than or equal to Ia, the current measurement result I1Is output through a processor, wherein1,I2The current measurement results are respectively the measurement results of the first current measurement module and the second current measurement module, and Ia is a current threshold value;
a second current measuring module integrated with two independent current measuring chips for I2<Ia or Ia<I2Measurement of the current I2Outputting through a processor;
the first current measuring module and the second current measuring module are packaged in the same shell.
The output of the magnetic sensing unit, the output of the first operational amplifier and the output of the second operational amplifier in the H-bridge circuit are monitored in real time or partially through the processor, the magnitude and the direction of the outputs are compared with a set range, if the magnitudes and the direction of the outputs exceed the set range, the first current measuring module breaks down, and a fault code or a fault signal is output through the single chip microcomputer.
The sensor also comprises a sensor shell, wherein the sensor shell comprises a copper bar which is injected or installed in advance, a hole is formed in the copper bar, and the copper bar is bent to be close to one side of the sensor shell; the second current measuring module comprises two current measuring chips, and the current measuring chips enter the holes of the copper bar and measure the size and the direction of a circuit in the copper bar; the copper bar is provided with two mounting holes along the current flow direction.
Fig. 1 is a schematic diagram of the operation of a closed loop hall current sensor. When current Ip passes through the primary side, a magnetic field is generated in an air gap of a magnetic core, a Hall (Hall) unit outputs a voltage signal under the action of the magnetic field, the voltage is amplified to drive a corresponding triode to supply power to a coil, the direction of the magnetic field generated by the coil at the air gap is opposite to that of the magnetic field generated by the primary side current, the magnetic field of the air gap is reduced, and when the magnetic field of the air gap is zero (a sensor is stable), the current in the coil is in direct proportion to the primary side current, so that measurement is realized.
As shown in fig. 2, the sensor of the present invention is composed of a first current measuring module, a second current measuring module, a single chip, a power supply module, an interface circuit, and signal lines 1,2, and 3. The first current measuring module is responsible for measuring the low-range section, and the precision is high; the second current measurement module is responsible for the measurement of a high-range section, and the precision is lower than that of the module A.
When a primary side current passes through the single-chip microcomputer, a magnetic field is generated, the single-chip microcomputer collects the output of the second current measuring module, and when-Ia is less than or equal to I2When the current is less than or equal to Ia, the singlechip outputs the measurement value of the first current measurement module; the measured current is out of the range, the single chip microcomputer outputs the measured value of the second current measuring module, and the values of the two measuring modules are transmitted to the client through the input/output module in a digital signal format through the signal lines 1 and 2. Optionally, a signal line 3 is added to realize time synchronization with the client (the host computer realizes time synchronization), the singlechip starts to calculate the integral of the current with respect to time, and the result is still sent to the client (or the host computer) through the signal lines 1 and 2
As shown in fig. 3, the overall structure of one of the sensors includes a current measuring chip, a circuit board a, a circuit board B, a coil, a copper bar, a housing and glue. The two current measuring chips are pre-installed on the printed circuit board A, and are made to extend into the holes of the copper bars in subsequent installation to form a second current measuring module together with the copper bars. The circuit board B is provided with a first current measuring module (a coil, a magnetic sensing chip (Hall and the like), a coil driving circuit and a coil current sampling resistor), and is also provided with a singlechip, a power supply module, an interface circuit and the like. The coil is conducted with the circuit board B in modes of soldering two pins and the like. The circuit board is conducted with the circuit board B through terminal soldering or other connection modes. The circuit boards A and B, the coil and other parts are installed in a shell of the sensor, and are connected through terminals integrated in the shell by soldering, and then all parts are fixed by pouring glue.
In the working process of the sensor, current passes through the copper bar to generate a magnetic field, the magnetic-sensing chip in the first current measuring module can generate output, the output is transmitted to the coil driving circuit through the circuit board B, the current flows to the coil through the pin between the coil and the circuit board B and then flows back to the circuit board B, and the single chip microcomputer on the circuit board realizes high-precision measurement of the current by measuring the voltage at two ends of the sampling resistor. In order to reduce the cost, the size of the coil is controlled, so that the range of the first current measuring module is small, and the first current measuring module is responsible for measuring in a low-range section.
The magnetic field that the electric current produced in the copper bar also can be responded to by two current measurement chips, produces output voltage, and circuit through circuit board A on, and circuit board B arrives the singlechip, accomplishes the measurement. Because the module adopts the chip to directly measure, the precision is lower than that of the first current measuring module. The output of the two modules is output to the client/host after single chip calculation and judgment. The circuit board is provided with two current measurement chips, so that redundant measurement is realized, and the functional safety level of measurement is improved.
As shown in FIG. 4, the sensor housing contains a copper bar which is injected or installed in advance, and a hole is formed in the copper bar and is bent towards one side of the sensor housing to be close to the sensor housing. A part of the circuit board A and the low-precision current measuring chip can enter the hole of the copper bar to measure the size and the direction of the circuit in the copper bar. The copper bar is provided with two mounting holes along the current flow direction.
As shown in fig. 5, module a employs a closed loop hall current measurement technique with an H-bridge. The H-bridge is formed by a triode, as shown in fig. 5, control signal 1 is taken from a magnetosensitive unit (hall unit), and control signal 2 is taken from the comparison of two reference voltages Ref1 and Ref 2. Ref1 is derived from the voltage across the coil, Ref2 bit set voltage. A primary current passes through the coil, the Hall unit outputs voltage, when a Hall output signal passes through the operational amplifier OP1, a high level is output, the T1 is switched on, and the T2 is switched off; after the reference signals Ref1 and Ref2 pass through the operational amplifier OP2, the output is low, T3 is turned off, T4 is turned on, and the supply current flows from the power supply V + of the H-bridge, through T1, the coil, the sampling resistor, and T4, back to GND. When the primary side current direction is reversed, the Hall output signal outputs a low level after passing through the operational amplifier OP1, the T1 is cut off, the T2 is conducted, the T3 is conducted, the T4 is cut off, the power supply current returns to GND from V +, T3, the coil, T2 and the sampling resistor of the H-bridge power supply, so that the current of the coil is opposite to the previous current direction, and the bidirectional current is measured. The sampling resistor Rs may be disposed between the transistor and the ground, or between the power supply V + of the coil H bridge and the transistor. The reference voltage Ref1 is derived from the voltage across the coil, the reference voltage Ref2 may be derived from the midpoint voltage of the supply voltage in the manner shown in the figure, or from other devices such as a potentiometer, and the voltage signal provided is any value between the supply voltages of the 0-H bridge.
The first measuring module can also be added with the H-bridge driving circuit of the invention on the basis of the existing current measuring technology to realize the same effect as the invention. The current measurement technology of the H-bridge driving circuit can be adopted as the measurement technology of the compensation coil, and is not limited to: closed loop AMR current measurement technology, closed loop TMR measurement technology and closed loop fluxgate current measurement technology. In the three technologies, the H-bridge control signal 1 of the present invention is connected to the output of the TMR unit, or the AMR unit or the fluxgate probe, and with reference to the present invention, the bidirectional current measurement can be realized under the condition of unidirectional power supply.
As shown in fig. 6, in the first current measurement module, when a primary current passes through, a magnetic field Bp Is generated in an air gap of a coil core, a hall chip (magnetic sensing unit) generates a voltage signal, and the voltage signal Is driven by an H bridge to generate a compensation current Is on the coil, the directions of the magnetic fields Bs and Bs in the air gap are opposite to the direction of Bp, the magnetic field of the air gap Is reduced, when the sensor works stably, the magnitudes of Bs and Bp are also close, and the balanced magnetic field Bh in the air gap Is reduced to near zero. If the sensor is not functioning properly, the Hall chip voltage is not near zero. The output voltage of the Hall unit is monitored through the single chip ADC, and whether the module works normally or not can be judged. Furthermore, the size of the two control signals of the H bridge is in direct proportion to the compensated current, in the production process of the sensor, the corresponding relation between the size of the two control signals of the H bridge and the current is recorded through production calibration, and the diagnosis of the sensor can be realized by monitoring the control signals of the H bridge in real time through the single chip microcomputer, so that the functional safety of the module is realized. The mode does not add extra parts, so the cost for realizing functional safety is low.
The first and second measuring modules realize functional safety, the rest parts of the sensor are matched with functional safety design, and the overall functional safety performance of the sensor is improved.
As shown in fig. 7, another configuration may be adopted, the first current measuring module is implemented as in the embodiment 1, but the second current measuring module is distinguished in that the current measuring chip is directly soldered or otherwise conducted to the circuit board B, and the circuit board B still has the hall unit, the chip, the coil, the single chip, the power module, and the like. The circuit board B with the current measuring chip is mounted in the housing of the sensor, in which there are copper bars, in the same way as before. The current measuring chip can directly extend into the hole of the copper bar for measurement as shown in fig. 8.
As shown in fig. 9, the H-bridge drive can be configured in another way, using mosfets for T3 and T4, with control signal 1 being taken from the magnetosensitive cell (hall cell) and control signal 2 being taken from the comparison of two reference voltages Ref1 and Ref 2. Ref1 is derived from the voltage across the coil, Ref2 bit set voltage. A primary current passes through the coil, the Hall unit outputs voltage, when a Hall output signal passes through the operational amplifier OP1, a high level is output, the T1 is switched on, and the T2 is switched off; after the reference signals Ref1 and Ref2 pass through the operational amplifier OP2, the output is high, T3 is turned off, T4 is turned on, and the supply current flows from the power supply V + of the H-bridge, through T1, the coil, the sampling resistor, and T4, back to GND. When the primary side current direction is reversed, the Hall output signal outputs a low level after passing through the operational amplifier OP1, the T1 is cut off, the T2 is conducted, the T3 is conducted, the T4 is cut off, the power supply current returns to GND from V +, T3, the coil, T2 and the sampling resistor of the H-bridge power supply, so that the current of the coil is opposite to the previous current direction, and the bidirectional current is measured. The sampling resistor Rs may be disposed between the transistor and the ground, or between the power supply V + of the H-bridge and the transistor. The reference voltage Ref1 is derived from the coil midpoint voltage, the reference voltage Ref2 may be derived from the midpoint voltage of the supply voltage in the manner shown in the figure, or from other devices such as a potentiometer, and the voltage signal provided is anywhere between 0 and H bridge supply voltages.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention.

Claims (5)

1. An H-bridge driving circuit is characterized by comprising a first operational amplifier, a second operational amplifier, N first NPN triodes, N first PNP triodes, N second NPN triodes, N second PNP triodes, first to second resistors and a sampling resistor, wherein N is more than or equal to 1; wherein the content of the first and second substances,
the input end of the first operational amplifier is connected with the output end of the external magnetic-sensing unit, the output end of the first operational amplifier is respectively connected with the base electrode of the first NPN triode and the base electrode of the first PNP triode, the collector electrode of the first NPN triode is connected with the collector electrode of the second NPN triode, the emitter electrode of the first NPN triode is respectively connected with the emitter electrode of the first PNP triode, one end of the first resistor and one end of the external coil, the collector electrode of the first PNP triode is connected with the collector electrode of the second PNP triode, the other end of the first resistor is respectively connected with one end of the second resistor and the first input end of the second operational amplifier, the other end of the second resistor is respectively connected with the emitter electrode of the second NPN triode, the emitter electrode of the second PNP triode and the other end of the coil, the base electrode of the second NPN triode and the base electrode of the second PNP triode, the second input end of the second operational amplifier is connected with an external fixed voltage;
the connection mode of the sampling resistor and other devices in the H-bridge driving circuit is as follows:
one end of the sampling resistor is connected with the collector electrode of the first PNP triode and the collector electrode of the second PNP triode respectively, and the other end of the sampling resistor is connected with the ground; or: one end of the sampling resistor is connected with the collector of the first NPN triode and the collector of the second NPN triode respectively, and the other end of the sampling resistor is connected with the power supply of the H bridge.
2. An H-bridge driving circuit is characterized by comprising a first operational amplifier, a second operational amplifier, N first NPN triodes, N first PNP triodes, N first MOSFETs, N second MOSFETs, first to second resistors and a sampling resistor, wherein N is more than or equal to 1; wherein the content of the first and second substances,
the input end of the first operational amplifier is connected with the output end of the external magnetic-sensing unit, the output end of the first operational amplifier is respectively connected with the base electrode of the first NPN triode and the base electrode of the first PNP triode, the collector electrode of the first NPN triode is connected with the source electrode of the first MOSFET, the emitter electrode of the first NPN triode is respectively connected with the emitter electrode of the first PNP triode, one end of the first resistor and one end of the external coil, the collector electrode of the first PNP triode is connected with the source electrode of the second MOSFET, the other end of the first resistor is connected with one end of the second resistor, the first input end of the second operational amplifier is respectively connected, the other end of the second resistor is respectively connected with the drain electrode of the first MOSFET, the drain electrode of the second MOSFET and the other end of the coil, the grid electrode of the first MOSFET and the grid electrode of the second MOSFET are respectively connected with the output end of the second operational amplifier, and the second input end of the second operational amplifier is connected with an external fixed voltage;
the connection mode of the sampling resistor and other devices in the H-bridge driving circuit is as follows:
one end of the sampling resistor is connected with the collector of the first PNP triode and the source of the second MOSFET respectively, and the other end of the sampling resistor is connected with the ground; or: one end of the sampling resistor is connected with a collector electrode of the first NPN triode and a source electrode of the first MOSFET respectively, and the other end of the sampling resistor is connected with a power supply of the H bridge.
3. A current sensor comprising a first current measurement module, a second current measurement module and a processor, the first current measurement module comprising the H-bridge drive circuit of claim 1 or 2, a magneto-sensitive element and a coil; wherein the content of the first and second substances,
the range of the first current measuring module is smaller than that of the second current measuring module;
a first current measuring module for measuring when-Ia is less than or equal to I2When Ia is less than or equal to Ia, the current measurement result I1Is output through a processor, wherein1,I2The current measurement results are respectively the measurement results of the first current measurement module and the second current measurement module, and Ia is a current threshold value;
a second current measuring module integrated with two independent current measuring chips for I2<Ia or Ia<I2Measurement of the current I2Outputting through a processor;
the first current measuring module and the second current measuring module are packaged in the same shell.
4. The current sensor according to claim 3, wherein the output of the magneto-dependent cell, the output of the first operational amplifier and the output of the second operational amplifier in the H-bridge circuit are monitored by the processor in real time, and the magnitude and direction of the outputs are compared with a set range, if the outputs exceed the range, the first current measurement module is in fault, and a fault code or a fault signal is output through the single chip microcomputer.
5. The current sensor according to claim 3, further comprising a sensor housing, wherein the sensor housing comprises a copper bar which is pre-molded or installed, the copper bar is provided with a hole and is bent to approach one side of the sensor housing; the second current measuring module comprises two current measuring chips, and the current measuring chips enter the holes of the copper bar and measure the size and the direction of a circuit in the copper bar; the copper bar is provided with two mounting holes along the current flow direction.
CN202010069290.0A 2020-01-21 2020-01-21 H-bridge drive circuit and current sensor based on H-bridge drive circuit Withdrawn CN111162775A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112198362A (en) * 2020-10-30 2021-01-08 常州常荣传感技术有限公司 Drive circuit for closed-loop current sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112198362A (en) * 2020-10-30 2021-01-08 常州常荣传感技术有限公司 Drive circuit for closed-loop current sensor

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