CN205139220U - Power semiconductor module of integrated current sensor magnetic core - Google Patents
Power semiconductor module of integrated current sensor magnetic core Download PDFInfo
- Publication number
- CN205139220U CN205139220U CN201520908676.0U CN201520908676U CN205139220U CN 205139220 U CN205139220 U CN 205139220U CN 201520908676 U CN201520908676 U CN 201520908676U CN 205139220 U CN205139220 U CN 205139220U
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- CN
- China
- Prior art keywords
- magnetic core
- output electrode
- power semiconductor
- current sensor
- sensor magnetic
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
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Abstract
The utility model provides a power semiconductor module of integrated current sensor magnetic core, includes output electrode, sampling control terminal, bottom plate, ceramic substrate, shell, output electrode is connected with the output electrode arm that is on a parallel with the bottom plate direction and sets up, the output electrode arm links to each other with ceramic substrate, the cover has the sensor magnetic core on the output electrode arm, the sensor magnetic core has a magnetic core opening up, the corresponding position department that the shell is lieing in magnetic core opening top is equipped with the jack. The utility model discloses with the integration of current sensor magnetic core in the inside of power semiconductor module, when needs carry out current sample, only need the magnetic core opening part insert hall element can, left out in power semiconductor module externally mounted current sensor's step among the prior art, increased control system's integrated level, miniaturized degree and stability, and reduced follow -up use cost.
Description
Technical field
The utility model relates to field of power electronics, is specifically related to the power semiconductor modular of integrated current sensors magnetic core.
Background technology
The topological structure of power semiconductor modular is single tube, Unit two, Unit six etc., can be combined into the circuit form such as half-bridge, three phase full bridge as required.In actual use, usually need to obtain output current value.
Conventional power semiconductors module does not possess current sample function, therefore, when output current measured by needs, need the interchange output electrode of power semiconductor modular to be connected with busbar, and install current sensor on busbar, thus by the electric signal transmission that samples to control section.
The defect that this scheme exists is: on busbar, install current sensor take up room larger, sometimes even need busbar bending to coordinate the installation of current sensor, loaded down with trivial details dismounting circuit is needed again when not needing to measure current value, this mode is not only bad for system compact, and installation bothers, cost is higher, and response speed is slower.
Summary of the invention
Goal of the invention: for the problems referred to above, the utility model aims to provide a kind of power semiconductor modular of integrated current sensors magnetic core.
Technical scheme: a kind of power semiconductor modular of integrated current sensors magnetic core, comprise output electrode, controlling of sampling terminal, base plate, ceramic substrate, shell, described output electrode is connected with the output electrode arm being parallel to base plate direction and arranging, described output electrode arm is connected with ceramic substrate, on described output electrode arm, cover has sensor magnetic core, described sensor magnetic core has a magnetic core opening upward, and the corresponding position that described shell is being positioned at magnetic core overthe openings is provided with jack.
Further, described output electrode arm and ceramic substrate are by ultrasonic soldering mode or bind aluminum steel mode and be connected.
Further, the size of described jack is not more than the size of magnetic core opening.
Further, described sensor magnetic core is Hall current sensor magnetic core.
Further, described sensor magnetic core is open loop Hall current sensor magnetic core.
Beneficial effect: current sensor magnetic core is integrated in the inside of power semiconductor modular by the utility model; when needs carry out current sample; only need insert Hall element at magnetic core opening part; eliminate the step of installing current sensor in prior art in power semiconductor modular outside, be more conducive to the protection of the integrated of controller and power semiconductor modular.Meanwhile, the measuring accuracy of Hall current sensor is higher, survey frequency scope is comparatively wide and have good isolation effect, and open loop Hall current sensor can meet the measurement demand of larger current.When without the need to carrying out current sample, the normal use of power semiconductor modular can be realized and do not affect good looking appearance.The utility model adds the integrated level of control system, degree of miniaturization and stability, and reduces follow-up use cost.
Accompanying drawing explanation
Fig. 1 is the inner structure schematic diagram of the first connected mode of the present utility model;
Fig. 2 is the inner structure schematic diagram of the second connected mode of the present utility model;
Fig. 3 is the structural representation of the first connected mode of the present utility model;
Fig. 4 is the structural representation of the second connected mode of the present utility model;
Fig. 5 is the structural representation of the utility model embodiment.
Embodiment
As shown in Figure 1, a kind of power semiconductor modular of integrated current sensors magnetic core, comprise output electrode 1, negative electrode 2, positive electrode 3, controlling of sampling terminal 4, base plate 5, ceramic substrate 6, shell 7, described output electrode 1 is connected with the output electrode arm 8 being parallel to base plate 5 direction and arranging, described output electrode arm 8 is connected with ceramic substrate 6, on described output electrode arm 8, cover has sensor magnetic core 9, and described sensor magnetic core 9 is open loop Hall current sensor magnetic core.Make every cross streams output electrode 1 by a sensor magnetic core 9.Described sensor magnetic core 9 has a magnetic core opening upward.
As shown in Figure 5, when needs carry out current sample, insert at the opening part of magnetic core the Hall element 11 matched, the pin of Hall element 11 upward.
As shown in Figure 3, in order to coordinate the insertion of follow-up Hall element 11, described shell 7 is provided with jack 10 in the corresponding position being positioned at magnetic core overthe openings, and the pin of described Hall element 11 passes from jack 10.The size of jack 10 is not more than the size of magnetic core opening.Whole Hall element 11 can be passed from jack 10.
Hall element 11 can insert magnetic core opening when power semiconductor modular is assembled, then mounting casing; Also after power semiconductor modular has been assembled, can insert at jack 10 place of shell 7, now Hall element 11 and sensor magnetic core 9 just constitute Hall current sensor; Can also first Hall element 11 be welded on the driving PCB plate of subsequent installation, when then driving PCB plate is installed on power semiconductor modular, makes Hall element 11 be inserted into jack 10 place of shell 7, form Hall current sensor with sensor magnetic core 9.
In order to prevent Hall element 11 to be shifted, Hall element 11 uses epoxy glue or adhesive glue to fix at magnetic core opening part.Epoxy glue or adhesive glue can be injected shell 7 from jack 10 and solidify after Hall element 11 inserts jack 10, also first uncured epoxy glue or adhesive glue can be injected in jack 10, again Hall element 11 is inserted jack 10, after solidifying, can ensure that the position of Hall element 11 is fixed and the reliability of follow-up connection.
Electric current flow through output electrode 1 and around output electrode 1 generation magnetic field; Hall element 11 obtains corresponding current value by the magnetic induction density detecting this magnetic field; and be converted into voltage signal and be transferred to control circuit; when current anomaly; by control circuit by controlling of sampling terminal 4 switch-off power device, thus protection power device.
The pin of Hall element 11 can directly be welded on driving PCB plate together with controlling of sampling terminal 4, achieves quick sampling and reliable and stable connection.
The output electrode 1 of power semiconductor modular can as shown in figures 1 and 3, adopt ultrasonic welding process to connect with the connection of ceramic substrate 6; Also can as shown in Figure 2 and Figure 4, binding crude aluminum line be adopted to realize connecting.
When without the need to carrying out current sample, the utility model can realize the normal use of power semiconductor modular and not affect good looking appearance.
Current sensor magnetic core is integrated in the inside of power semiconductor modular by the utility model, when needs carry out current sample, only need insert Hall element at magnetic core opening part, eliminate the step of installing current sensor in prior art in power semiconductor modular outside, add the integrated level of control system, degree of miniaturization and stability, and reduce follow-up use cost.
Claims (5)
1. the power semiconductor modular of an integrated current sensors magnetic core, comprise output electrode (1), controlling of sampling terminal (4), base plate (5), ceramic substrate (6), shell (7), described output electrode (1) is connected with the output electrode arm (8) being parallel to base plate (5) direction and arranging, described output electrode arm (8) is connected with ceramic substrate (6), it is characterized in that: the upper cover of described output electrode arm (8) has sensor magnetic core (9), described sensor magnetic core (9) has a magnetic core opening upward, described shell (7) is provided with jack (10) in the corresponding position being positioned at magnetic core overthe openings.
2. the power semiconductor modular of integrated current sensors core according to claim 1, is characterized in that, described output electrode arm (8) and ceramic substrate (6) are by ultrasonic soldering mode or bind aluminum steel mode and be connected.
3. the power semiconductor modular of integrated current sensors magnetic core according to claim 1, is characterized in that, the size of described jack (10) is not more than the size of magnetic core opening.
4. the power semiconductor modular of integrated current sensors magnetic core according to claim 1, is characterized in that, described sensor magnetic core (9) is Hall current sensor magnetic core.
5. the power semiconductor modular of integrated current sensors magnetic core according to claim 1, is characterized in that, described sensor magnetic core (9) is open loop Hall current sensor magnetic core.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520908676.0U CN205139220U (en) | 2015-11-13 | 2015-11-13 | Power semiconductor module of integrated current sensor magnetic core |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520908676.0U CN205139220U (en) | 2015-11-13 | 2015-11-13 | Power semiconductor module of integrated current sensor magnetic core |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205139220U true CN205139220U (en) | 2016-04-06 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520908676.0U Withdrawn - After Issue CN205139220U (en) | 2015-11-13 | 2015-11-13 | Power semiconductor module of integrated current sensor magnetic core |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205139220U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105334367A (en) * | 2015-11-13 | 2016-02-17 | 扬州国扬电子有限公司 | Power semiconductor module for integrating magnetic core of current sensor |
| CN108074917A (en) * | 2016-11-16 | 2018-05-25 | 南京银茂微电子制造有限公司 | A kind of semi-bridge type IGBT module of multi-chip parallel connection |
-
2015
- 2015-11-13 CN CN201520908676.0U patent/CN205139220U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105334367A (en) * | 2015-11-13 | 2016-02-17 | 扬州国扬电子有限公司 | Power semiconductor module for integrating magnetic core of current sensor |
| CN105334367B (en) * | 2015-11-13 | 2018-05-25 | 扬州国扬电子有限公司 | The power semiconductor modular of integrated current sensors magnetic core |
| CN108074917A (en) * | 2016-11-16 | 2018-05-25 | 南京银茂微电子制造有限公司 | A kind of semi-bridge type IGBT module of multi-chip parallel connection |
| CN108074917B (en) * | 2016-11-16 | 2019-12-13 | 南京银茂微电子制造有限公司 | Multi-chip parallel half-bridge IGBT module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20160406 Effective date of abandoning: 20180525 |
|
| AV01 | Patent right actively abandoned |