CN205102229U - Semiconductor heating installation - Google Patents
Semiconductor heating installation Download PDFInfo
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- CN205102229U CN205102229U CN201520825072.XU CN201520825072U CN205102229U CN 205102229 U CN205102229 U CN 205102229U CN 201520825072 U CN201520825072 U CN 201520825072U CN 205102229 U CN205102229 U CN 205102229U
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Abstract
The utility model relates to a heating technical field especially relates to a semiconductor heating installation. Including the semiconductor generate heat the unit, with the semiconductor generates heat and does electric connection of unit the generate heat power supply unit of unit power supply of semiconductor, the semiconductor generates heat the unit and includes the semiconductor board that generates heat, the semiconductor generate heat the board including the hot junction, the cold junction that is used for absorbing the heat that are used for releasing the heat, set up to be in the hot junction with P type semiconductor and N type semiconductor and connection between the cold junction N type semiconductor with the metallic conductor of P type semiconductor, metallic conductor sets up and is used for connecting the positive and negative electrode of power, its characterized in that: N type semiconductor sets up graphite alkene layer, perhaps P type semiconductor sets up graphite alkene layer, perhaps N type semiconductor with P type semiconductor all sets up graphite alkene layer. Improve the generate heat temperature difference of the hot cold junction of board of semiconductor reaches and improves the generate heat purpose of the board ability of heating of semiconductor.
Description
Technical field
The present invention relates to heating technology field, particularly relate to a kind of semiconductor heating installation.
Background technology
The shortcomings such as the speed that heats of the air-conditioning of current heating of house is slow, power consumption is large, noise is large.Semiconductor heating has following characteristics: free from environmental pollution, volume is little, lightweight, structure simply, easily operates; Heat speed fast, and be convenient to realize controllable adjustment by operating current size; Can in the extreme environment operation such as weightless or overweight.But compare with the heating equipment such as conventional air-conditioning, semiconductor heating also exist heating efficiency low, heat deficiencies such as having a narrow range of temperature, this have impact on it to a great extent and widely uses.
Summary of the invention
The present invention is directed to the problems referred to above and propose a kind of semiconductor heating installation, comprise semiconductor heating unit, electrically connect as with described semiconductor heating unit the power supply unit that described semiconductor heating unit powers; Described semiconductor heating unit comprises semiconductor heating plate, described semiconductor heating plate comprise for release heat hot junction, for absorb heat cold junction, be arranged on P-type semiconductor between described hot junction and described cold junction and N-type semiconductor and the metallic conductor being connected described N-type semiconductor and described P-type semiconductor; Described metallic conductor arranges the positive and negative electrode for connecting described power supply; It is characterized in that: described N-type semiconductor arranges graphene layer, or described P-type semiconductor arranges graphene layer, or described N-type semiconductor and described P-type semiconductor all arrange graphene layer.Graphene in semiconductor has the high electron mobility of high thermal conductivity and conductance, and described P-type semiconductor and described N-type semiconductor can be impelled to form stable P pole or N pole quickly with less energy consumption; Meanwhile, the heat conductivility that Graphene is high can improve transfer of heat speed in described semiconductor heating plate and ability.Make the hot junction of described semiconductor heating plate continue to produce heat, improve the temperature difference of the hot cold junction of described semiconductor heating plate, reach the object improving semiconductor heating plate heating capacity.
As preferably, described P-type semiconductor arranges graphene layer; Described N-type semiconductor has the graphene layer of Graphene purity higher than the Graphene purity of the graphene layer of described P-type semiconductor.Improve the hot cold junction temperature difference to 150 DEG C of described semiconductor heating plate, after energising 3S, the temperature in described hot junction can reach 100 DEG C, substantially increases the ability heated of semiconductor heating plate.
As preferably, also comprise and send warm unit.Describedly send warm unit the even heat in described hot junction can be delivered to each heating position and space.
As preferably, described in send warm unit comprise heat-conducting part and send warm portion; Described heat-conducting part is connected with the heat conduction of described hot junction, send warm portion described in being passed to by the heat in described hot junction, described in send warm portion by from described heat-conducting unit heat delivery to need heating space.
As preferably, described cold junction arranges defroster.Described cold junction temperature is minimum reaches subzero 50 DEG C, and described defroster can remove the frost that cold junction produces, and improves comfort.
As preferably, also comprise the current regulation unit of the size of current for regulating described power supply unit.By regulating the size of electric current, the refrigeration of adjustment semiconductor heating plate or heating capacity.
The present invention also provides a kind of semiconductor heating installation, comprises semiconductor heating unit, electrically connects as with described semiconductor heating unit the power supply unit that described semiconductor heating unit powers; Described semiconductor heating unit comprises semiconductor heating plate, described semiconductor heating plate comprise for release heat hot junction, for absorb heat cold junction, be arranged on P-type semiconductor between described hot junction and described cold junction and N-type semiconductor and the metallic conductor being connected described N-type semiconductor and described P-type semiconductor; Described metallic conductor arranges the positive and negative electrode for connecting described power supply; It is characterized in that: described N-type semiconductor adds Graphene particle, or described P-type semiconductor adds Graphene particle, or described N-type semiconductor and described P-type semiconductor all add Graphene particle.The Graphene be added with in the semiconductor of Graphene particle has the high electron mobility of high thermal conductivity and conductance, and described P-type semiconductor and described N-type semiconductor can be impelled to form stable P pole or N pole quickly with less energy consumption; Meanwhile, the heat conductivility that Graphene is high can improve transfer of heat speed in described semiconductor heating plate and ability.Make the hot junction of described semiconductor heating plate continue to produce heat, improve the temperature difference of the hot cold junction of described semiconductor heating plate, reach the object improving semiconductor heating plate heating capacity.
As preferably, described N-type semiconductor adds Graphene particle, and described P-type semiconductor adds Graphene particle, and the Graphene purity of the Graphene particle of described N-type semiconductor is higher than the Graphene purity of the graphite granule of described P-type semiconductor.Improve the hot cold junction temperature difference to 150 DEG C of described semiconductor heating plate, after energising 3S, the temperature in described hot junction can reach 100 DEG C, substantially increases the ability heated of semiconductor heating plate.
As preferably, also comprise and send warm unit.Describedly send warm unit the even heat in described hot junction can be delivered to each heating position and space.
As preferably, described in send warm unit comprise heat-conducting part and send warm portion; Described heat-conducting part is connected with the heat conduction of described hot junction, send warm portion described in being passed to by the heat in described hot junction, described in send warm portion by from described heat-conducting unit heat delivery to need heating space.
As preferably, described cold junction arranges defroster.Described cold junction temperature is minimum reaches subzero 50 DEG C, and described defroster can remove the frost that cold junction produces, and improves comfort.
As preferably, also comprise the current regulation unit of the size of current for regulating described power supply unit.By regulating the size of electric current, the refrigeration of adjustment semiconductor heating plate or heating capacity.
The present invention has following beneficial effect:
1. semiconductor heating device adopts board-like semiconductor heating plate as heat-generating units, and structure is simple;
2. semiconductor heating plate has heating capacity fast, can in a short period of time by the temperature increase in heating space to specified scope;
3.12V direct current just can carry out work, saves energy consumption;
4. heat temperature range adjustable, be suitable for various occasion;
5. the mode adopting electricity to heat heats, and avoids the heating using compressor-type, reduces and heat noise.
6. the mode adopting electricity to heat heats, and in heating, mechanical motion, runs more stable.
7., by adding Graphene in the semiconductors, what improve peninsula body heating board heats speed.
Accompanying drawing explanation
Fig. 1 semiconductor heating apparatus structure system diagram;
Fig. 2 embodiment semiconductor heating board plate structure schematic diagram;
Fig. 3 embodiment two semiconductor heating plate plate structure schematic diagram;
Wherein, 1-power supply unit, 2-semiconductor heating unit, 3-send warm unit, 4-heating space, 5-defroster, 21-hot junction, 22-cold junction, 23-P type semiconductor, 24-N type semiconductor, 25-metallic conductor, 26-graphene layer, 27-Graphene particle, 31-heat-conducting part, 32-to send warm portion.
Detailed description of the invention
Below in conjunction with accompanying drawing, embodiments of the present invention are described in detail.
As Fig. 1, a kind of semiconductor heating installation, comprises semiconductor heating unit 2, is electrically connected and is the power supply unit 1 that semiconductor heating unit is powered with semiconductor heating unit; Semiconductor heating unit comprises semiconductor heating plate, semiconductor heating plate comprise for release heat hot junction 21, for absorb heat cold junction 22, be arranged on P-type semiconductor 23 between hot junction 21 and cold junction 22 and N-type semiconductor 24 and the metallic conductor 25 being connected N-type semiconductor 24 and P-type semiconductor 23; Metallic conductor 25 arranges the positive and negative electrode for connecting power supply unit 1.
Embodiment one
Graphene layer 26 is accompanied in N-type semiconductor 24 or P-type semiconductor 23.Graphene layer in N-type semiconductor 24 is the N-type doped graphene layer that can increase the impurity of Graphene betatopic ability doped with H2 or other; Graphene layer in P-type semiconductor 23 is can increase doped with NO2 or other P type doped graphene layer that Graphene obtains the impurity of electronic capability.Graphene has the high electron mobility of high thermal conductivity and conductance, and P-type semiconductor 23 or N-type semiconductor 24 can be impelled to form stable P pole or N pole quickly with less energy consumption.Meanwhile, the heat conductivility that Graphene is high can improve transfer of heat speed in described semiconductor heating plate and ability.Make hot junction 22 continue to produce heat, improve the temperature difference partly leading the hot cold junction of heating board, improve the heating performance of semiconductor heating installation.
Also in N-type semiconductor 24 and P-type semiconductor 23, graphene layer 26 can be all set, as Fig. 1.Now, need ensure that N-type semiconductor has the N-type doped graphene layer of Graphene purity higher than the Graphene purity of the P type doped graphene layer of P-type semiconductor.To make hot junction discharge more heats, the high temperature of 100 DEG C can be obtained in hot junction 22.
As Fig. 2, in order to even heat is delivered to heating space 4, heating installation also comprises and send warm unit 3.Warm unit 3 is sent to comprise heat-conducting part 31 and send warm portion 32; Heat-conducting part 31 is connected with hot junction 22 heat conduction, is passed to by the heat in hot junction 22 and send warm portion 32, send warm portion 32 by the heat delivery from heat-conducting part 31 to the space needing heating.In addition, cold junction arranges defroster 5, to remove the frost that cold junction low temperature causes.
What conveniently control to adjust heating plant heats temperature, and power supply unit 1 also wraps the current regulation unit of the size of current for regulating power supply unit.
Embodiment two
As Fig. 3, N-type semiconductor 24 or P-type semiconductor 23 are added with Graphene particle 27.Graphene layer in N-type semiconductor 24 is the N-type doped graphene layer that can increase the impurity of Graphene betatopic ability doped with H2 or other; Graphene layer in P-type semiconductor 23 is can increase doped with NO2 or other P type doped graphene layer that Graphene obtains the impurity of electronic capability.Graphene has the high electron mobility of high thermal conductivity and conductance, and P-type semiconductor 23 or N-type semiconductor 24 can be impelled to form stable P pole or N pole quickly with less energy consumption.Meanwhile, the heat conductivility that Graphene is high can improve transfer of heat speed in described semiconductor heating plate and ability.Make hot junction 22 continue to produce heat, improve the temperature difference of the hot cold junction of semiconductor heating plate, improve the heating performance of semiconductor heating installation.
Also Graphene particle 27 can all be added, as Fig. 3 in N-type semiconductor 24 and P-type semiconductor 23.Now, need ensure that N-type semiconductor has the N-type doped graphene layer of Graphene purity higher than the Graphene purity of the P type doped graphene layer of P-type semiconductor.To make hot junction discharge more heats, the high temperature of 100 DEG C can be obtained in hot junction 22.
In order to even heat is delivered to heating space 4, heating installation also comprises and send warm unit 3.Warm unit 3 is sent to comprise heat-conducting part 31 and send warm portion 32; Heat-conducting part 31 is connected with hot junction 22 heat conduction, is passed to by the heat in hot junction 22 and send warm portion 32, send warm portion 32 by the heat delivery from heat-conducting part 31 to the space needing heating.In addition, cold junction arranges defroster 5, to remove the frost that cold junction low temperature causes.
What conveniently control to adjust heating plant heats temperature, and power supply unit 1 also wraps the current regulation unit of the size of current for regulating power supply unit.
Although describe embodiments of the present invention by reference to the accompanying drawings, those of ordinary skill in the art can make various distortion or amendment within the scope of the appended claims.
Claims (6)
1. a semiconductor heating installation, comprises semiconductor heating unit (2), is electrically connected and is the power supply unit (1) that described semiconductor heating unit (2) is powered with described semiconductor heating unit (2); Described semiconductor heating unit (2) comprises semiconductor heating plate, described semiconductor heating plate comprise for release heat hot junction (21), for absorb heat cold junction (22), be arranged on P-type semiconductor (23) between described hot junction (21) and described cold junction (22) and N-type semiconductor (24) and the metallic conductor (25) being connected described N-type semiconductor (24) and described P-type semiconductor (23); Described metallic conductor (25) arranges the positive and negative electrode for connecting described power supply unit (1); It is characterized in that: described N-type semiconductor (24) arranges graphene layer, or described P-type semiconductor (23) arranges graphene layer, or described N-type semiconductor (24) and described P-type semiconductor (23) all arrange graphene layer (26).
2. a kind of semiconductor heating installation according to claim 1, is characterized in that: described P-type semiconductor (23) arranges graphene layer (26); Described N-type semiconductor (23) has the graphene layer of Graphene purity higher than the Graphene purity of the graphene layer of described P-type semiconductor (24).
3. a kind of semiconductor heating installation according to claim 1 and 2, is characterized in that: also comprise and send warm unit (3).
4. a kind of semiconductor heating installation according to claim 3, is characterized in that: described in send warm unit (3) comprise heat-conducting part (31) and send warm portion (32); Described heat-conducting part (31) is connected with described hot junction (21) heat conduction, send warm portion (32) described in being passed to by the heat of described hot junction (21), described in send warm portion (32) will from the heat delivery of described heat-conducting part (31) to need heating space.
5. a kind of semiconductor heating installation according to claim 1 and 2, is characterized in that: described cold junction (22) arranges defroster (5).
6. a kind of semiconductor heating installation according to claim 1 and 2, is characterized in that: the current regulation unit also comprising the size of current for regulating described power supply unit (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520825072.XU CN205102229U (en) | 2015-10-24 | 2015-10-24 | Semiconductor heating installation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520825072.XU CN205102229U (en) | 2015-10-24 | 2015-10-24 | Semiconductor heating installation |
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| CN205102229U true CN205102229U (en) | 2016-03-23 |
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| CN201520825072.XU Active CN205102229U (en) | 2015-10-24 | 2015-10-24 | Semiconductor heating installation |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105202612A (en) * | 2015-10-24 | 2015-12-30 | 唐玉敏 | Semiconductor heating device |
| CN111550964A (en) * | 2020-04-29 | 2020-08-18 | 珠海格力电器股份有限公司 | Defrosting method, refrigeration equipment, defrosting control method and commercial refrigeration unit |
-
2015
- 2015-10-24 CN CN201520825072.XU patent/CN205102229U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105202612A (en) * | 2015-10-24 | 2015-12-30 | 唐玉敏 | Semiconductor heating device |
| CN111550964A (en) * | 2020-04-29 | 2020-08-18 | 珠海格力电器股份有限公司 | Defrosting method, refrigeration equipment, defrosting control method and commercial refrigeration unit |
| CN111550964B (en) * | 2020-04-29 | 2023-10-27 | 珠海格力电器股份有限公司 | Defrosting method, refrigeration equipment, defrosting control method and commercial refrigeration unit |
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Effective date of registration: 20220819 Address after: Building 3, Food Industrial Park, South Section of Xicheng Avenue, Pucheng County, Weinan City, Shaanxi Province 715500 Patentee after: Shaanxi Persimmon Yuanneng Technology Co.,Ltd. Address before: 315400 room 104, building 9, new city garden, Yangming street, Yuyao City, Ningbo City, Zhejiang Province Patentee before: Tang Yumin Patentee before: Yu Hongwei |