CN205092256U - Silicon avalanche photodiode subassembly - Google Patents
Silicon avalanche photodiode subassembly Download PDFInfo
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- CN205092256U CN205092256U CN201520887291.0U CN201520887291U CN205092256U CN 205092256 U CN205092256 U CN 205092256U CN 201520887291 U CN201520887291 U CN 201520887291U CN 205092256 U CN205092256 U CN 205092256U
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- avalanche photodiode
- silicon avalanche
- silicon
- meta materials
- ultraviolet
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Abstract
The utility model provides a silicon avalanche photodiode subassembly, silicon avalanche photodiode and distance the super material of silicon avalanche photodiode's the at least 3 times of light wave wavelength department of substrate, the electromagnetic resonance wavelength of super material is located between the 400nm -780nm, and the incident light is through reentrant silicon avalanche photodiode after the super material. The utility model discloses a ripe with the low -cost silicon detector spare of manufacture craft, with the help of the strong electromagnetic resonance absorption of super material to the visible light, block the visible light outside silicon avalanche photodiode to reduce the visible light to the interference of ultraviolet detection, realize having higher ultraviolet / ultraviolet detection of visible light discernment ratio.
Description
Technical field
The utility model relates to ultraviolet detector technical field, particularly relates to the silicon avalanche photodiode technical field that Si detector is used, is specially a kind of silicon avalanche photodiode assembly.
Background technology
In electromagnetic radiation spectrum, wavelength belongs to visible ray at 400nm-780nm, and the electromagnetic wave of wavelength between 10nm-400nm is ultraviolet light.Wherein, 400nm-300nm is NUV (closely) ultraviolet, 300nm-200nm be MUV (in) ultraviolet, 200nm-122nm is FUV (far) ultraviolet.Ultraviolet detector military and civilian in be widely used, such as, it may be used in flame detecting, missile warning guidance, electrooptical countermeasures, the detection of battlefield biochemical reagents, bio-medical analysis, environment pollution detection, offshore oil prison, ozone monitoring, space flight survey of deep space, ultraviolet secure communication and ultraviolet astronomy.
The current more common ultraviolet detector having dropped into application has photomultiplier and silica-based ultraviolet phototube.Although photomultiplier transit tube device detectivity is high, its quantum efficiency is low, bulky, operating voltage is high, easy fragmentation damages.Although the wide bandgap semiconductor materials such as gallium nitride, carborundum also can make ultraviolet detector, make the prices of raw and semifnished materials used more expensive, and Manufacturing Techniques not also very ripe at present.Comparatively speaking, silicon materials low price, silicon-based detector part manufacture craft is also very ripe.Be that silicon photoelectric diode, silicon PIN detector or the manufacturing technology of silicon avalanche photodiode are all very ripe, corresponding product has been widely used in military affairs and civil area.The particularly internal gain that provides owing to having avalanche effect of silicon avalanche photodiode, can amplify tens, up to a hundred, even thousands of times by photogenerated current, thus can detect very faint light signal.But the energy gap of silicon is less (under normal temperature being 1.1 electron-volts), the optical wavelength that it is suitable for detecting mainly is positioned at visible light wave range.The ultraviolet light not only entering detector can produce photoelectric current, and the visible ray entering Si detector also can produce photoelectric current, this forms a kind of interference seriously to the detection of ultraviolet light, also the ultraviolet/visible light identification of detector can be caused to reduce than significantly, be unfavorable for the accurate detection of device to ultraviolet band light.In order to address this problem, usual needs add complicated, expensive filter system in Si detector front end, or adopt shallow junction structures and the very low so-called silicon ultraviolet enhancement detector of surface impurity concentration, but the manufacture craft of this kind of device requires very high.
Utility model content
The shortcoming of prior art in view of the above, the purpose of this utility model is to provide a kind of silicon avalanche photodiode assembly, is easily subject to the technical problem of visible ray interference for solving Si detector in prior art.
For achieving the above object and other relevant objects, the utility model provides a kind of silicon avalanche photodiode assembly, described silicon avalanche photodiode assembly comprises: silicon avalanche photodiode and apart from the Meta Materials at substrate at least 3 times of optical wavelength places of described silicon avalanche photodiode to make incident light by entering silicon avalanche photodiode again after described Meta Materials, the electromagentic resonance wavelength of described Meta Materials is between 400nm-780nm.
Preferably, described Meta Materials is made up of the metal level made on the glass substrate and dielectric layer the formed periodic multilayer structure that is alternately arranged.
Preferably, the number of plies of the periodic multilayer structure of described Meta Materials is more than 3 layers or 3 layers.
Preferably, described metal level is silver layer.
Preferably, described dielectric layer can be silicon nitride layer, titanium dioxide layer, alundum (Al2O3) layer or silicon dioxide layer.
As mentioned above, a kind of silicon avalanche photodiode assembly of the present utility model, has following beneficial effect:
The utility model without the need to using expensive filter, also without the need to using current Manufacturing Techniques also jejune gallium nitride and aluminum gallium nitride detector.It has employed the Si detector part of manufacture craft maturation and low cost, by the intense electromagnetic resonance absorption effect of Meta Materials to visible ray, visible ray is blocked in outside silicon avalanche photodiode, thus reduce visible ray to the interference of ultraviolet detection, realize the ultraviolet detection with higher ultraviolet/visible light identification ratio.
Accompanying drawing explanation
Fig. 1 is shown as the structural representation of a kind of silicon avalanche photodiode assembly of the present utility model.
Fig. 2 is shown as the structural representation of Meta Materials described in the utility model embodiment.
Fig. 3 is shown as the transmission spectral analysis figure of Meta Materials described in the utility model embodiment.
Element numbers explanation
1 silicon avalanche photodiode
2 Meta Materials
21 glass substrates
22 metal levels
23 silicon nitride layers
3 incident lights
Embodiment
Below by way of specific instantiation, execution mode of the present utility model is described, those skilled in the art the content disclosed by this specification can understand other advantages of the present utility model and effect easily.The utility model can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present utility model.
The purpose of this utility model is to provide a kind of silicon avalanche photodiode assembly, is easily subject to the technical problem of visible ray interference for solving Si detector in prior art.To principle and the execution mode of a kind of silicon avalanche photodiode assembly of the present utility model be elaborated below, and make those skilled in the art not need creative work can understand a kind of silicon avalanche photodiode assembly of the present utility model.
The present embodiment provides a kind of silicon avalanche photodiode assembly, and as shown in Figure 1, described silicon avalanche photodiode assembly comprises:
The Meta Materials 2 at silicon avalanche photodiode 1 and the substrate at least 3 times of optical wavelength places apart from described silicon avalanche photodiode 1, silicon avalanche photodiode 1 and Meta Materials 2 are two two different components be spatially separated.Described Meta Materials 2 is formed on glass substrate, be not connected between glass substrate with the substrate of silicon avalanche photodiode 1, the two is at a distance of at least 3 times of optical wavelengths, and substrate surface and glass baseplate surface are parallel to each other, and incident light 3 enters silicon avalanche photodiode 1 again by after Meta Materials 2.
Wherein, Meta Materials 2 is made up of the silver 22 be produced on glass substrate 21 and dielectric material 23 the formed sandwich construction that is alternately arranged.The thickness of the thickness of every one deck silver and every one deck dielectric material is all the wavelength (be detection optical wavelength 1/to two/20th between) much smaller than detection light.The number of plies of sandwich construction is not less than 3.Further, choosing of dielectric material 23 makes the electromagentic resonance wavelength of Meta Materials be positioned at required wave band with layer thickness and choosing of silver-colored thickness.
The English name of Meta Materials is metamaterial, and it possesses the unconventional electromagnetic property that natural material does not have.Multiple construction units of general employing engineer realize the unconventional electromagnetic property of Meta Materials, and the dimensional parameters of construction unit is much smaller than electromagnetic wavelength.Because the character of Meta Materials depends primarily on the interaction between the size of construction unit, unit, hyperonic atom or supermolecule so this construction unit is otherwise known as.
According to Meta Materials and metal plasma electromagentic resonance theory, in Meta Materials sandwich construction, the material behavior of institute's composition material and dimensional parameters determine the electromagentic resonance wavelength X r of Meta Materials jointly.When the electromagnetic wavelength of external incident is close to λ r time, can there is strong local plasmon resonance in the free electron in argent, absorb a large amount of light energy, causes the luminous power of outgoing sharply to decline.This patent will utilize this characteristic electromagentic resonance wavelength light wave to strong absorption of Meta Materials just.We can make the electromagentic resonance wavelength of Meta Materials just in time be positioned at visible light wave range by optimal design.
Particularly, in the present embodiment, the electromagentic resonance wavelength of described Meta Materials 2 is between 400nm-780nm.When exterior light enters silicon avalanche photodiode assembly time, visible ray wherein, by Meta Materials strong absorption, can enter the light mainly ultraviolet light of silicon avalanche photodiode, therefore significantly can improve the ultraviolet/visible light identification ratio of detector.
Dielectric layer 23 can choose following material: silicon nitride or silicon dioxide or titanium dioxide or alundum (Al2O3).The band gap of these dielectric materials is comparatively large, is applicable to the detection of ultraviolet light.Because the optical constant of different materials is different, therefore in time selecting other dielectric material, the thickness of dielectric material and choosing of the thickness of argent can be different.But, these composition materials thickness be all much smaller than detection light wavelength, thickness detection optical wavelength 1/1 to two/20th between.In like manner, the number of plies not necessarily 3 of the sandwich construction of composition Meta Materials, can be greater than 3 number.But in any case, the kind of sandwich construction institute composition material, choosing of thickness must make the electromagentic resonance wavelength of Meta Materials be in (between 400nm-780nm) between visible light wave range.
Further, in the present embodiment, the material forming Meta Materials has silver and silicon nitride, and the former belongs to metal material, and the latter belongs to dielectric material.The material behavior of silicon nitride and silver and their thickness determine the electromagentic resonance wavelength X r of Meta Materials jointly.Therefore, we, by optimal design, make the electromagentic resonance wavelength of Meta Materials just in time be positioned at visible light wave range.In the embodiment shown in Figure 2, silicon nitride thickness, silver thickness all much smaller than detection light wavelength.The thickness of silicon nitride is 130nm, and the thickness of silver is 150nm.
Described Meta Materials 2 is the methods adopting electron beam evaporation or sputtering, and grown silicon nitride layer 23 and silver layer 22 on glass substrate 21 successively, repeats silicon nitride layer and silver layer that namely this growth course obtains 3-tier architecture for 3 times.The number of plies of above-mentioned periodic multilayer structure also can more than 3 layers.
In addition, in the present embodiment, preferably, the thickness of described silver layer 22 and described silicon nitride layer 23 be between 1 to two/20ths points that detect optical wavelength between.
In the utility model, material category and the size of composition Meta Materials are not unique.Preferably, described silicon nitride layer can be replaced by titanium dioxide layer, alundum (Al2O3) layer or silicon dioxide layer.The band gap of these dielectric materials is comparatively large, is applicable to the detection of ultraviolet light.Because the optical constant of different materials is different, therefore in time selecting other dielectric material, the thickness of dielectric material and choosing of the thickness of argent can be different.But, these composition materials thickness be all much smaller than detection light wavelength, thickness detection optical wavelength 1/1 to two/20th between.In like manner, the number of plies not necessarily 3 of the sandwich construction of composition Meta Materials, can be greater than 3 number.But in any case, the kind of sandwich construction institute composition material, choosing of thickness must make the electromagentic resonance wavelength of Meta Materials be in (between 400nm-780nm) between visible light wave range.For the metamaterial structure shown in Fig. 2, its electromagentic resonance wavelength is 530nm.In time changing the composition material of Meta Materials or change the thickness of these materials, electromagentic resonance wavelength also can correspondingly change.But, as long as to be positioned at visible light wave range scope just passable for this wavelength.But, when the central area of electromagentic resonance wavelength ratio closer visible light wave range time, Meta Materials can be more better to the assimilation effect of visible light.
As shown in Figure 3, there is minimum value at 530nm place in transmission spectrum, and transmissivity is low reaches 0.1.This wavelength is exactly the electromagentic resonance absorbing wavelength of Meta Materials, and it is positioned at visible light wave range.Electromagnetic wave near 530nm electromagentic resonance absorbing wavelength, its transmissivity is also very low.It can thus be appreciated that, very most visible ray can significantly absorb by the metamaterial structure shown in Fig. 2, the visible ray that can enter into silicon avalanche photodiode so significantly reduces, the corresponding minimizing of interference that visible ray causes ultraviolet detection, thus detector can obtain large ultraviolet/visible light identification ratio.
In sum, the utility model is by forming a Meta Materials 2 at the substrate at least 3 times of optical wavelength places apart from described silicon avalanche photodiode 1, the electromagentic resonance wavelength of described Meta Materials 2, between 400nm-780nm, makes incident light 3 enter silicon avalanche photodiode 1 again by after Meta Materials 2.The utility model have employed the Si detector part of manufacture craft maturation and low cost, by the intense electromagnetic resonance absorption effect of Meta Materials to visible ray, visible ray is blocked in outside silicon avalanche photodiode, thus reduce visible ray to the interference of ultraviolet detection, realize the ultraviolet detection with higher ultraviolet/visible light identification ratio.So the utility model effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present utility model and effect thereof only, but not for limiting the utility model.Any person skilled in the art scholar all without prejudice under spirit of the present utility model and category, can modify above-described embodiment or changes.Therefore, such as have in art and usually know that the knowledgeable modifies or changes not departing from all equivalences completed under the spirit and technological thought that the utility model discloses, must be contained by claim of the present utility model.
Claims (5)
1. a silicon avalanche photodiode assembly, it is characterized in that, described silicon avalanche photodiode assembly comprises: silicon avalanche photodiode and apart from the Meta Materials at substrate at least 3 times of optical wavelength places of described silicon avalanche photodiode to make incident light by entering silicon avalanche photodiode again after described Meta Materials, the electromagentic resonance wavelength of described Meta Materials is between 400nm-780nm.
2. silicon avalanche photodiode assembly according to claim 1, is characterized in that, described Meta Materials is made up of the metal level made on the glass substrate and dielectric layer the formed periodic multilayer structure that is alternately arranged.
3. silicon avalanche photodiode assembly according to claim 2, is characterized in that, the number of plies of the periodic multilayer structure of described Meta Materials is more than 3 layers or 3 layers.
4. silicon avalanche photodiode assembly according to claim 2, is characterized in that, described metal level is silver layer.
5. silicon avalanche photodiode assembly according to claim 2, is characterized in that, described dielectric layer is silicon nitride layer, titanium dioxide layer, alundum (Al2O3) layer or silicon dioxide layer.
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| CN201520887291.0U CN205092256U (en) | 2015-11-09 | 2015-11-09 | Silicon avalanche photodiode subassembly |
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| CN201520887291.0U CN205092256U (en) | 2015-11-09 | 2015-11-09 | Silicon avalanche photodiode subassembly |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106684172A (en) * | 2015-11-09 | 2017-05-17 | 中蕊（武汉）光电科技有限公司 | Silicon avalanche photodiode assembly and manufacturing method therefor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106684172A (en) * | 2015-11-09 | 2017-05-17 | 中蕊（武汉）光电科技有限公司 | Silicon avalanche photodiode assembly and manufacturing method therefor |
| CN106684172B (en) * | 2015-11-09 | 2018-04-27 | 中蕊（武汉）光电科技有限公司 | A kind of silicon avalanche photodiode component and preparation method thereof |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20160316 Effective date of abandoning: 20180427 |