CN205069639U - 阵列基板及包括该阵列基板的tft显示装置 - Google Patents

阵列基板及包括该阵列基板的tft显示装置 Download PDF

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CN205069639U
CN205069639U CN201520881760.8U CN201520881760U CN205069639U CN 205069639 U CN205069639 U CN 205069639U CN 201520881760 U CN201520881760 U CN 201520881760U CN 205069639 U CN205069639 U CN 205069639U
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董职福
李红敏
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BOE Technology Group Co Ltd
Hefei BOE Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0296—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices involving a specific disposition of the protective devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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Abstract

本实用新型提供一种阵列基板和包括该阵列基板的显示装置，所述阵列基板包括显示区和围绕显示区的非显示区，其中，在非显示区上设置有静电引导层，所述静电引导层与显示区电绝缘。

Description

阵列基板及包括该阵列基板的TFT显示装置
技术领域
本实用新型涉及一种阵列基板和包括该阵列基板的TFT显示装置。
背景技术
用于TFT显示屏的传统的阵列基板1如图1-2所示。阵列基板1包括显示区11和非显示区12。非显示区12中设置有栅极驱动电路(GOA)121、静电引导环(GND)122、数据驱动电路123、柔性印刷电路(FPC)124、衬底基板126和绝缘层125。传统的阵列基板1主要通过静电引导环122来抵抗静电以便保护显示屏。但具有上述结构的传统的阵列基板1存在TFT显示屏对静电电荷的抵抗能力弱的问题。
实用新型内容
本实用新型的一个目的是，解决现有TFT显示屏疏导静电电荷能力差的问题。
根据本实用新型的一个方面，提供一种阵列基板，所述阵列基板包括显示区和围绕显示区的非显示区，其中，在非显示区上设置有静电引导层，所述静电引导层与显示区电绝缘。
根据本实用新型的一个方面，非显示区是与在显示区周围的暴露的衬底基板对应的平面区域，在衬底基板上设置有绝缘层，其中绝缘层位于衬底基板和静电引导层之间。
根据本实用新型的一个方面，在所述非显示区上设置有围绕显示区的静电引导环，在所述静电引导环与所述显示区之间设置有栅极驱动电路和数据驱动电路；所述非显示区还包括柔性印刷电路，所述静电引导环与所述柔性印刷电路电连接，静电引导环位于衬底基板和绝缘层之间。
根据本实用新型的一个方面，静电引导层电连接至柔性印刷电路的接地信号。
根据本实用新型的一个方面，静电引导层通过设置于绝缘层的在柔性印刷电路上方的部分中的导通孔直接电连接至柔性印刷电路的接地信号。
根据本实用新型的一个方面，静电引导层由透明导电材料形成。
根据本实用新型的一个方面，静电引导层由氧化铟锡形成。
根据本实用新型的一个方面，静电引导层通过溅射工艺形成。
根据本实用新型的一个方面，提供一种TFT显示装置，所述显示装置包括上述的一种阵列基板。
根据本实用新型的阵列基板和显示装置，具有大面积的用于收集电荷的静电引导层，增强了存储电荷的能力，能够及时导走静电，在利用静电引导环引导电荷的基础上，进一步增强了抗静电能力，从而有效保护显示屏。而且，采用的材料和工艺与现有的制造阵列基板采用的材料和工艺通用，几乎不额外增加成本，但能够显著提高静电疏导能力。
附图说明
图1是现有技术中阵列基板的结构示意图。
图2是图1的阵列基板沿线A-A’截取的剖面图。
图3是根据本实用新型一个实施例的阵列基板的结构示意图。
图4是图3的阵列基板沿线A-A’截取的剖面图。
具体实施方式
下面结合附图详细描述本实用新型的实施例。为了更好地理解本实用新型，本实用新型中的相关部件或构件采用与现有技术中相应的部件相同或相似的附图标记。
图3是根据本实用新型一个实施例的用于TFT显示装置的阵列基板1(也称为TFT基板)的结构示意图。图4是图3的阵列基板1沿线A-A’截取的剖面图。图3所示的阵列基板1包括显示区11和围绕显示区11的非显示区12。非显示区12对应于在显示区11周围的暴露的衬底基板126的区域(如图4中所示)。在所述非显示区12上设置有围绕显示区11的静电引导环122，在所述静电引导环122与所述显示区11之间和数据驱动电路123。所述非显示区12还包括柔性印刷电路124，所述静电引导环12与所述柔性印刷电路124电连接以形成回路，从而将由静电引导环122收集的静电电荷引导走。
如图4中所示，在非显示区12中的衬底基板126上还设置有一层绝缘层125。绝缘层125覆盖设置在衬底基板126上的栅极驱动电路121、静电引导环122、驱动集成电路123和柔性印刷电路124。此外，在非显示区12中的绝缘层125上还设置有静电引导层127。静电引导层127与显示区11电绝缘。在绝缘层125的在柔性印刷电路124上方的部分中设置有与柔性印刷电路124的接地信号导通的导通孔(图中未示出)，静电引导层127通过该导通孔直接电连接至柔性印刷电路124的接地信号。所述静电引导层127可以是透明的导电材料。优选地，所述静电引导层127由与制造显示区11时使用的氧化铟锡形成。静电引导层127可以通过溅射工艺形成。优选地，静电引导层127可以与在形成显示区11上的导电层采用相同的材料和工艺形成。具体地，与传统现有工艺完全一样，依次通过涂覆、光刻、显影等工序依次形成各金属层和绝缘层。在最后一道工序，在不增加掩膜板(mask)的基础上，利用最后一张掩膜板，在原有静电引导环122和栅极驱动电路121上方形成透明的静电引导层127。
本实用新型还提供包括上述阵列基板1的TFT显示装置。
根据本实用新型的静电引导层不额外增加阵列基板的制造工艺，不会增加阵列基板的制造成本，但是增加的静电引导层使得阵列基板具有更大的收集静电的表面积，使得几乎整个非显示区都可以用来收集静电电荷，并将收集的静电电荷通过柔性印刷电路直接引导走，显著提升阵列基板抵抗静电的能力。
本领域技术人员可以理解的是，上述的形成本实用新型的静电引导层的材料和工艺是示例性的，在不脱离本实用新型的保护范围的情况下，可以对静电引导层的材料和工艺做出修改和改变。
另外，需要注意的是，本文所描述的实施例旨在通过实例进行说明，而非对本实用新型进行限制。本实用新型的保护范围以所附的权利要求来体现。本领域技术人员可以理解的是，以本实用新型为基础，不经过创造性劳动而获得的本实用新型的各种改变和变型都落在本实用新型的范围内。

Claims (9)

1.一种阵列基板，所述阵列基板包括显示区和围绕显示区的非显示区，其特征在于，
在非显示区上设置有静电引导层，所述静电引导层与显示区电绝缘。
2.根据权利要求1所述的阵列基板，其特征在于，
非显示区是与在显示区周围的暴露的衬底基板对应的平面区域，在衬底基板上设置有绝缘层，其中绝缘层位于衬底基板和静电引导层之间。
3.根据权利要求2所述的阵列基板，其特征在于，
在所述非显示区上设置有围绕显示区的静电引导环，在所述静电引导环与所述显示区之间设置有栅极驱动电路和数据驱动电路；所述非显示区还包括柔性印刷电路，所述静电引导环与所述柔性印刷电路电连接，静电引导环位于衬底基板和绝缘层之间。
4.根据权利要求3所述的阵列基板，其特征在于，
静电引导层电连接至柔性印刷电路的接地信号。
5.根据权利要求4所述的阵列基板，其特征在于，
静电引导层通过设置于绝缘层的在柔性印刷电路上方的部分中的导通孔直接电连接至柔性印刷电路的接地信号。
6.根据权利要求1所述的阵列基板，其特征在于，
静电引导层由透明导电材料形成。
7.根据权利要求6所述的阵列基板，其特征在于，
静电引导层由氧化铟锡形成。
8.根据权利要求7所述的阵列基板，其特征在于，
静电引导层通过溅射工艺形成。
9.一种显示装置，包括根据权利要求1-8中任一项所述的阵列基板。
CN201520881760.8U 2015-11-03 2015-11-03 阵列基板及包括该阵列基板的tft显示装置 Active CN205069639U (zh)

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WO2017076071A1 (zh) * 2015-11-03 2017-05-11 京东方科技集团股份有限公司 阵列基板及包括该阵列基板的tft显示装置
CN107799015A (zh) * 2016-09-06 2018-03-13 三星显示有限公司 显示设备
CN108461492A (zh) * 2018-05-30 2018-08-28 武汉华星光电技术有限公司 薄膜晶体管阵列基板、显示面板以及显示装置
CN108511461A (zh) * 2018-03-29 2018-09-07 武汉华星光电技术有限公司 显示装置及其阵列基板
CN109377933A (zh) * 2018-12-26 2019-02-22 厦门天马微电子有限公司 一种显示面板的驱动方法、显示面板和显示装置
CN110571321A (zh) * 2018-06-05 2019-12-13 群创光电股份有限公司 电子装置
CN111128969A (zh) * 2019-12-13 2020-05-08 昆山国显光电有限公司 显示面板及显示装置
US11056513B2 (en) 2018-05-30 2021-07-06 Wuhan China Star Optoelectronics Technology Co., Ltd. Thin film transistor array substrate, display panel and display device
CN115241267A (zh) * 2022-08-25 2022-10-25 厦门天马显示科技有限公司 显示面板和显示装置

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KR20140016111A (ko) * 2012-07-30 2014-02-07 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
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WO2017076071A1 (zh) * 2015-11-03 2017-05-11 京东方科技集团股份有限公司 阵列基板及包括该阵列基板的tft显示装置
US10204921B2 (en) 2015-11-03 2019-02-12 Boe Technology Group Co., Ltd. Array substrate assembly and TFT display apparatus comprising the same
CN107799015A (zh) * 2016-09-06 2018-03-13 三星显示有限公司 显示设备
CN107799015B (zh) * 2016-09-06 2021-08-24 三星显示有限公司 显示设备
CN108511461A (zh) * 2018-03-29 2018-09-07 武汉华星光电技术有限公司 显示装置及其阵列基板
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CN111128969B (zh) * 2019-12-13 2021-08-24 昆山国显光电有限公司 显示面板及显示装置
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