CN205035488U - Improve tore of reflection of zone melting silicon single crystal axial and radial resistivity homogeneity - Google Patents
Improve tore of reflection of zone melting silicon single crystal axial and radial resistivity homogeneity Download PDFInfo
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- CN205035488U CN205035488U CN201520811845.9U CN201520811845U CN205035488U CN 205035488 U CN205035488 U CN 205035488U CN 201520811845 U CN201520811845 U CN 201520811845U CN 205035488 U CN205035488 U CN 205035488U
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- Prior art keywords
- pipeline
- doping
- cooling water
- tore
- reflection
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- 239000013078 crystal Substances 0.000 title claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 19
- 239000010703 silicon Substances 0.000 title claims abstract description 19
- 238000004857 zone melting Methods 0.000 title abstract description 4
- 239000000498 cooling water Substances 0.000 claims abstract description 29
- 238000004321 preservation Methods 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 6
- 239000007789 gas Substances 0.000 abstract description 4
- 229910052786 argon Inorganic materials 0.000 abstract description 3
- 235000017166 Bambusa arundinacea Nutrition 0.000 abstract 3
- 235000017491 Bambusa tulda Nutrition 0.000 abstract 3
- 241001330002 Bambuseae Species 0.000 abstract 3
- 235000015334 Phyllostachys viridis Nutrition 0.000 abstract 3
- 239000011425 bamboo Substances 0.000 abstract 3
- 239000012535 impurity Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model provides an improve tore of reflection of zone melting silicon single crystal axial and radial resistivity homogeneity, including a section of thick bamboo, cooling water piping and the doping pipeline of keeping warm, the cover is equipped with annular cooling water piping on the heat preservation section of thick bamboo barrel outer wall, last water inlet and the delivery port of being provided with of cooling water piping, adjacent cooling water piping lower extreme department on the barrel outer wall, the cover is equipped with annular doping pipeline, be equipped with a plurality of pipeline air inlet on the doping pipeline, the section of thick bamboo of barrel be equipped with on the wall a plurality of with the barrel air inlet that the doping pipeline is linked together. Improve tore of reflection of zone melting silicon single crystal axial and radial resistivity homogeneity can reduce in the stove argon gas convection current and to the influence of doping concentration, improved axial resistivity homogeneity, it is poor with the doping concentration at edge to reduce free bath surface center, has improved radial resistivity homogeneity, and local doping concentration risees improvement doping efficiency, reduce cost.
Description
Technical field
The utility model belongs to silicon single crystal manufacturing apparatus field, especially relates to a kind of tore of reflection improving zone-melted silicon single crystal axis and radial resistivity evenness.
Background technology
Zone melting method growing single-crystal silicon is the state-of-the-art utilisation technology of current manufacture order crystal silicon, the homogeneity utilizing tore of reflection reasonably to control monocrystalline axis and radial resistivity is an important step in monocrystalline silicon growing process, the weak point of typical reflection ring is, after Qu Rong gas impurity mixes with main argon gas in stove, the density difference caused due to temperature head and flowing in stove, form gaseous exchange, in single crystal growth process, crystalline substance transfers to making monocrystalline edge containment concentration less, and fluctuate larger by the impact of air-flow, affect impurity in the axial distribution with radial direction, therefore, axial and radial resistivity evenness fluctuates greatly.
Summary of the invention
In view of this, the utility model be intended to propose a kind of improve zone-melted silicon single crystal axially with the tore of reflection of radial resistivity evenness, with solve zone-melted silicon single crystal axially and radial resistivity evenness to fluctuate large problem.
For achieving the above object, the technical solution of the utility model is achieved in that
A kind of tore of reflection improving zone-melted silicon single crystal axis and radial resistivity evenness, comprise heat-preservation cylinder, cooling water pipeline and doping pipeline, described heat-preservation cylinder is a cylindrical tube, the outer wall of described cylindrical shell is arranged with the cooling water pipeline of annular, described cooling water pipeline is positioned at described cylindrical shell top, described cooling water pipeline is provided with water-in and water outlet, adjacent cooling water pipeline lower end on described cylinder body outer wall, be arranged with the doping pipeline of annular, described doping pipeline is provided with several conduit air inlet, the barrel of described cylindrical shell is provided with several cylindrical shell inlet mouths be connected with described doping pipeline.
Further, described cooling water pipeline and doping pipeline are fixed on the outer wall of described cylindrical shell all in a welding manner.
Further, described cooling water pipeline can be pipe or square tube, and described doping pipeline can be pipe or square tube.
Further, the material of described cooling water pipeline and doping pipeline is copper.
Further, the material of described heat-preservation cylinder is copper or silver.
Further, the number of described conduit air inlet is 2.
Further, the number of described cylindrical shell inlet mouth is 2-6.
Relative to prior art, raising zone-melted silicon single crystal described in the utility model axially has following advantage with the tore of reflection of radial resistivity evenness: by adopting above technical scheme, argon gas convection current can be reduced in stove on the impact of doping content, improve the consistence of bath surface impurity concentration, improve axial resistivity evenness; The doping content that can reduce free melt centre of surface and edge is poor, improves radial resistivity evenness; And local doping concentrations raises, improve doping efficiency, reduce costs.
Accompanying drawing explanation
The accompanying drawing forming a part of the present utility model is used to provide further understanding of the present utility model, and schematic description and description of the present utility model, for explaining the utility model, is not formed improper restriction of the present utility model.In the accompanying drawings:
Fig. 1 is front view of the present utility model;
Fig. 2 is vertical view of the present utility model.
Description of reference numerals:
1-heat-preservation cylinder, 11-cylindrical shell inlet mouth, 2-cooling water pipeline, 21-water-in, 22-water outlet, 3-adulterates pipeline, 31-conduit air inlet.
Embodiment
It should be noted that, when not conflicting, the embodiment in the utility model and the feature in embodiment can combine mutually.
Below with reference to the accompanying drawings and describe the utility model in detail in conjunction with the embodiments.
As illustrated in fig. 1 and 2, a kind of tore of reflection improving zone-melted silicon single crystal axis and radial resistivity evenness, comprises heat-preservation cylinder 1, cooling water pipeline 2 and doping pipeline 3;
Described heat-preservation cylinder 1 is a cylindrical tube, the outer wall of described cylindrical shell is arranged with the cooling water pipeline 2 of annular with the form of welding, described cooling water pipeline 2 can be pipe or square tube, described cooling water pipeline 2 is positioned at described cylindrical shell top, described cooling water pipeline 2 is provided with water-in 21 and water outlet 22, the material of described cooling water pipeline 2 is copper, the gaseous exchange that the setting of cooling water pipeline 2 can reduce to cause because of temperature head is on the impact of doping content, and the doping content reducing bath surface centerand edge is poor;
Adjacent cooling water pipeline 2 lower end on described cylinder body outer wall, the doping pipeline 3 of annular is arranged with the form of welding, described doping pipeline 3 can be pipe or square tube, the material of described doping pipeline 3 is copper, described doping pipeline 3 is provided with 2 conduit air inlet 31, the barrel of described cylindrical shell is provided with 2-6 the cylindrical shell inlet mouth 11 be connected with described doping pipeline 3, and the setting of doping pipeline 3 can make local doping concentrations raise, and improves doping efficiency.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection domain of the present utility model.
Claims (7)
1. one kind is improved the tore of reflection of zone-melted silicon single crystal axis and radial resistivity evenness, it is characterized in that: comprise heat-preservation cylinder (1), cooling water pipeline (2) and doping pipeline (3), described heat-preservation cylinder (1) is a cylindrical tube, the outer wall of described cylindrical shell is arranged with the cooling water pipeline (2) of annular, described cooling water pipeline (2) is positioned at described cylindrical shell top, described cooling water pipeline (2) is provided with water-in (21) and water outlet (22), adjacent cooling water pipeline (2) lower end on described cylinder body outer wall, be arranged with the doping pipeline (3) of annular, described doping pipeline (3) is provided with several conduit air inlet (31), the barrel of described cylindrical shell is provided with several cylindrical shell inlet mouths (11) be connected with described doping pipeline (3).
2. raising zone-melted silicon single crystal axis according to claim 1 and the tore of reflection of radial resistivity evenness, is characterized in that: described cooling water pipeline (2) and doping pipeline (3) are fixed on the outer wall of described cylindrical shell all in a welding manner.
3. the tore of reflection of raising zone-melted silicon single crystal axis according to claim 1 and radial resistivity evenness, it is characterized in that: described cooling water pipeline (2) can be pipe or square tube, described doping pipeline (3) can be pipe or square tube.
4. raising zone-melted silicon single crystal axis according to claim 1 and the tore of reflection of radial resistivity evenness, is characterized in that: the material of described cooling water pipeline (2) and doping pipeline (3) is copper.
5. raising zone-melted silicon single crystal axis according to claim 1 and the tore of reflection of radial resistivity evenness, is characterized in that: the material of described heat-preservation cylinder (1) is copper or silver.
6. raising zone-melted silicon single crystal axis according to claim 1 and the tore of reflection of radial resistivity evenness, is characterized in that: the number of described conduit air inlet (31) is 2.
7. raising zone-melted silicon single crystal axis according to claim 1 and the tore of reflection of radial resistivity evenness, is characterized in that: the number of described cylindrical shell inlet mouth (11) is 2-6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520811845.9U CN205035488U (en) | 2015-10-19 | 2015-10-19 | Improve tore of reflection of zone melting silicon single crystal axial and radial resistivity homogeneity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520811845.9U CN205035488U (en) | 2015-10-19 | 2015-10-19 | Improve tore of reflection of zone melting silicon single crystal axial and radial resistivity homogeneity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205035488U true CN205035488U (en) | 2016-02-17 |
Family
ID=55294400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520811845.9U Active CN205035488U (en) | 2015-10-19 | 2015-10-19 | Improve tore of reflection of zone melting silicon single crystal axial and radial resistivity homogeneity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205035488U (en) |
-
2015
- 2015-10-19 CN CN201520811845.9U patent/CN205035488U/en active Active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20181029 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee before: TIANJIN HUANOU SEMICONDUCTOR MATERIAL TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191226 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring) Haitai Road No. 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
|
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |