CN205004615U - Subminiature laser module based on encapsulation of laser diode wafer - Google Patents
Subminiature laser module based on encapsulation of laser diode wafer Download PDFInfo
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- CN205004615U CN205004615U CN201520828534.3U CN201520828534U CN205004615U CN 205004615 U CN205004615 U CN 205004615U CN 201520828534 U CN201520828534 U CN 201520828534U CN 205004615 U CN205004615 U CN 205004615U
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- laser diode
- semiconductor laser
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- diode wafer
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Abstract
The utility model discloses a subminiature laser module based on encapsulation of laser diode wafer, including the semiconductor laser diode subassembly, the installation section of thick bamboo of eccentric draw -in groove has, aspherical lens, the lens clamping ring, the semiconductor laser diode subassembly, main function pass through the invariable supply of energy management part with external power source to give semiconductor laser diode, save exterior space, avoided dimensional limit that external drive brought and power control limit to the user, aspherical lens carries out the collimation with the big angle of divergence laser that semiconductor laser diode sent to reach usable degree, the lens clamping ring is the fixed structure of lens, also has the effect of diaphragm concurrently, plays the effect of eliminating parasitics light and the unnecessary light beam of interception laser major axis. Its design benefit is reasonable, has realized that small -size's laser module is practical, has improved the practicality, the versatility, and reliability and stability have satisfied the demand of hand -held type equipment to laser lamp -house.
Description
[technical field]
The utility model belongs to field of photoelectric technology, especially relates to the field of the miniaturization of laser module and Highgrade integration.
[background technology]
Laser lighting, display, scanning technique are the industries of high speed development in recent years, the semiconductor laser diode of miniaturized standard packaging, there is serviceability temperature wide ranges, drive the advantages such as simple, electricity-light conversion efficiency is high, wavelength is various, and monochromaticjty is good, by the light source as plurality of devices.Because the leading firm partly leading laser diode all adopts unified TO18, TO-38, the standard packaging such as TO-46, it is no problem that the size of these standard packaging uses in main equipment, but in recent years, the portable equipment of hand-hold type gets more and more, these equipment do not have too many selection when selecting LASER Light Source, the small form factor requirements of more frivolous equipment to device is higher.
Traditional laser module, standardized TO is used to encapsulate, it is advantageous that: standardized device provides positive means characteristic, because TO encapsulated semiconductor laser has the developing history of 20 years at least, its technique and check system are all through long-term process summary out, this device offers high reliability, but its large-sized application being encapsulated in low-power miniaturization is not preponderated, even if select minimum TO-38 encapsulation, optical texture is with the shortest patten's design, under the condition of external driving, its size still can at about 7mm, this size is close to the thickness of a lot of mobile phone, use so unlikely on these equipment.
Abroad APC drives and is integrated in TO encapsulation by more existing companies, the companies such as such as Arima, user only needs an external small size resistance can obtain the power wanted when using this laser, this is also a miniaturized direction, but these products still do not depart from the constraint of TO encapsulation, still have a segment distance apart from available microsize module.
[utility model content]
The purpose of this utility model is to provide a kind of microminiature laser module based on laser diode wafer encapsulation, laser diode wafer is encapsulated in a small PCB substrate of size, replace traditional TO encapsulation mode, and miniature laser diode is combined with lens etc. to realize microminiature laser module by the utility model.In addition, the utility model use ultra-thin ceramic substrate assembly as an alternative TO encapsulation parts, non-spherical lens carries out beam shaping, compact conformation, designs rationally ingenious, reduces the size of laser module to greatest extent.
The purpose of this utility model is realized by following technical proposals.
A kind of microminiature laser module based on laser diode wafer encapsulation, comprise mounting cylinder, and being arranged in mounting cylinder and the non-spherical lens that collimates of the substrate being integrated with semiconductor laser diode assembly, laser that semiconductor laser diode is sent, and intercepting laser major axis undesired light and there is the lens trim ring of centre bore; Described substrate is integrated with semiconductor laser diode wafer.
Described substrate is arranged further promising semiconductor laser diode and the constant-current drive circuit of constant operating current or permanent merit drive circuit are provided.
The material of described substrate can be aluminium oxide, aluminium nitride or Rogers 4350 series or other PCB materials.
The pad coating of described substrate adopts gold-tin alloy coating.
Described semiconductor laser diode adopts and closes double-basis transistor as control chip, and its SOT-563 is provided with the erection space of 3 square millimeters.
Described mounting cylinder is tubular structure, and the inner space of mounting cylinder is divided into the first space and second space by pair of flanges by it, the line of centres of described pair of flanges and the axes normal of mounting cylinder.
First bulk of described mounting cylinder is greater than second space size, and described semiconductor laser diode assembly is fixed in the first space, and described non-spherical lens is fixed in described second space by pair of flanges and lens trim ring.
The exterior contour size of described semiconductor laser diode is equal with the internal diameter in mounting cylinder first space.
Described mounting cylinder is provided with eccentric draw-in groove, grooving on cylindrical shell is non-centrosymmetrical, notch width and ceramic substrate laser diode substrate tight fit, the distance of center circle of the center string of a musical instrument and eccentric draw-in groove mounting cylinder, from 0.2mm, makes the luminous zone of semiconductor laser diode wafer just in time be in the center of cylinder.
Centered by the axis of mounting cylinder, described pair of flanges is non-centrosymmetric structure, ensures that the luminous zone of semiconductor laser diode is just in time in the center of mounting cylinder.
Described mounting cylinder uses 304 steel or Pb59-1 copper or aluminum alloy materials to make, and its contour tolerance is less than 0.05mm, within concentricity 0.02mm; The rear cut-off distance of described non-spherical lens be 1.1mm and lens rear identity distance from semiconductor laser diode luminous zone 1mm; Described lens trim ring uses 304 steel or Pb59-1 copper or aluminum alloy materials to make, and blackening process, prevents beam reflection from causing disc of confusion.
Compared with prior art, the utility model at least has following beneficial effect: the utility model is by being directly integrated in semiconductor laser diode wafer on substrate, the laser that semiconductor laser diode sends, there is the characteristic that the major and minor axis angle of divergence is inconsistent, non-spherical lens is used to carry out shaping to light beam, light beam is after non-spherical lens, be converted into the collimated light of a branch of beam waist diameter about 0.5 ~ 0.8mm, beam divergence angle is less than 1mrad, light beam is after lens trim ring, the longer angle of divergence is by brachymemma, hot spot ratio of semi-minor axis length is made to diminish further, obtain sub-circular hot spot, at this moment laser beam characteristic, the demand of most of handheld device to LASER Light Source can be met, and compact conformation, design rationally ingenious, reduce the size of laser module to greatest extent.
[accompanying drawing explanation]
Accompanying drawing described herein is used to provide further understanding of the present utility model, forms a application's part, does not form improper restriction of the present utility model, in the accompanying drawings:
Fig. 1 is assembly structure schematic diagram of the present utility model.
Fig. 2 (a) is for being integrated with the structural representation of the substrate of laser diode, and Fig. 2 (b) is the structural representation at another one visual angle, and Fig. 2 (c) is the structural representation at the 3rd visual angle.
The structural representation that Fig. 3 (a) is mounting cylinder, the vertical view that Fig. 3 (b) is mounting cylinder.
Fig. 4 (a) is the vertical view of lens trim ring, and Fig. 4 (b) is the front view of lens trim ring.
Wherein, the substrate of 1 band semiconductor laser diode wafer; 1-1 is semiconductor laser diode wafer; 1-3 is ambipolar compound triode BC847BV; 1-4 is pin leads; 2 mounting cylinders; 3 non-spherical lenses; 4 lens trim rings.
[embodiment]
Describe the utility model in detail below in conjunction with accompanying drawing and specific embodiment, be used for explaining the utility model in this illustrative examples of the present utility model and explanation, but not as to restriction of the present utility model.
As shown in Figure 1: the utility model discloses a kind of microminiature laser module based on laser diode wafer encapsulation, to comprise: be integrated with the substrate 1 of semiconductor laser diode assembly, mounting cylinder 2, non-spherical lens 3, and lens trim ring 4.Described substrate 1, the non-spherical lens 3 being integrated with semiconductor laser diode assembly, and lens trim ring 4 is arranged on mounting cylinder 2 inside.
Refer to Fig. 3 (a) and Fig. 3 (b), the structure of described mounting cylinder 2 and structure ensure that the optics concentricity of the utility model laser module, the coupling of the key parameters such as optical focal length.Specifically, mounting cylinder 2, for having the tubular structure of eccentric draw-in groove, the inner space of mounting cylinder is divided into the first space and second space by pair of flanges by it, the line of centres of described pair of flanges and the axes normal of mounting cylinder.First bulk of described mounting cylinder 2 is greater than second space size, the described substrate 1 being integrated with semiconductor laser diode assembly is fixed in the first space, and described non-spherical lens to be sandwiched between pair of flanges and lens trim ring 4 and to be fixed in described second space.The described exterior contour size being integrated with the substrate of semiconductor laser diode assembly is equal with the internal diameter in mounting cylinder first space, ensures that the exterior contour of substrate is against the first space wall of mounting cylinder.In addition, the line of centres of described pair of flanges is not by the axis of mounting cylinder, that is, pair of flanges is not arrange with the axisymmetrical of mounting cylinder, but amesiality a little, namely pair of flanges is non-centrosymmetrical, specifically, distance between the line of centres of pair of flanges and the string of a musical instrument crossing axle center of mounting cylinder is 0.2mm, makes the luminous zone of semiconductor laser diode just in time be in the center of cylinder.
Described mounting cylinder uses 304 steel or Pb59-1 copper, aluminum alloy materials processing, and contour tolerance is less than 0.05mm, within concentricity 0.02mm.
Refer to Fig. 2 (a), Fig. 2 (b), and Fig. 2 (c), the described further integrated promising semiconductor laser diode of substrate being integrated with semiconductor laser diode assembly provides the constant-current drive circuit of constant operating current or permanent merit drive circuit, major function is by bipolar transistor BC8457BV1-3 and peripheral circuit composition constant-current source circuit by external power source, constant supply is to semiconductor laser diode, save space outerpace, the size restrictions and power management restriction that external drive brings is avoided to user.
Described substrate is ceramic substrate, is aluminium oxide, aluminium nitride or Rogers 4350 series, or other PCB materials.All pad coating on described ceramic substrate are gold-tin alloy coating, can ensure high accuracy eutectic welding procedure, welding semiconductor laser diode bare chip and gold thread.Ceramic substrate adopts long electric BC847BV Composite Double based transistor 1-3 as control chip, and its SOT-563 only has the erection space of 3 mm, is conducive to driver miniaturization.The pin one-4 that user side connects, input 3 to 5V stable dc power supply can obtain collimation laser and export, without the need to separately doing power management and beam shaping.
Described ceramic substrate is the mechanical dimension's consistency ensureing substrate, and be first less than the sheet material of 0.01mm with thickness deviation, flexibility is less than 1mrad, and point panel edges adopts laser cutting parameter, and within length and width tolerance 0.05mm, coating is gold-tin alloy coating.
Described non-spherical lens, specifically aspherical glass lens are that the Vernonia parishii Hook. F. angle laser sent by semiconductor laser diode collimates, to arrive spendable degree.It is little that non-spherical lens has imaging aberration, the advantage that cost is low.Described aspherical glass lens select rear cut-off distance to be high index of refraction (n=1.89) lens of 1.1mm, and lens rear identity distance only has about 1mm from semiconductor laser diode luminous zone.
Refer to Fig. 4 (a) and Fig. 4 (b), described lens trim ring, is the fixed structure of non-spherical lens, also has the effect of diaphragm concurrently, plays a part to eliminate veiling glare and intercepting laser major axis undesired light.Its center offers centre bore.This lens trim ring uses 304 steel or Pb59-1 copper or aluminum alloy materials to process, and blackening process, prevents beam reflection from causing disc of confusion.
The utility model is by being directly welded in the ceramic substrate (or substrate of other material) of drive circuit by semiconductor laser diode wafer, ceramic substrate there are constant current or permanent merit drive circuit, for semiconductor laser diode provides constant operating current, semiconductor laser diode sends laser, the laser that semiconductor laser diode sends, there is the characteristic that the major and minor axis angle of divergence is inconsistent, non-spherical lens is used to carry out shaping to light beam, light beam is after non-spherical lens, be converted into the collimated light of a branch of beam waist diameter about 0.5 ~ 0.8mm, beam divergence angle is less than 1mrad, light beam is after lens trim ring, the longer angle of divergence is by brachymemma, hot spot ratio of semi-minor axis length is made to diminish further, obtain sub-circular hot spot, at this moment laser beam characteristic, the demand of most of handheld device to LASER Light Source can be met, compact conformation, design rationally ingenious, reduce the size of laser module to greatest extent.
The utility model compared with prior art has the following advantages:
1, compact conformation of the present utility model, reasonable in design, and assembling is simple, and it is convenient to realize.
2, the laser module of the utility model manufacture no longer uses the semiconductor laser diode of standardized packages, but laser diode chip is packaged in more miniaturized ceramic-based substrate, and this substrate dimension is thinner, less.
3, the utility model ceramic substrate is not only as the installation base plate of laser diode, or the driving PCB of semiconductor laser diode, the transmitting power of semiconductor laser diode can be controlled, to reach suitable laser safety standard by drive circuit composition constant-current source circuit (or permanent merit circuit) on ceramic substrate.
4, Laser output of the present utility model is no longer the asymmetric diverging light of conventional semiconductors laser diode, but the light beam collimated in quite long scope, can be used as miniaturized normal component and use.
Claims (10)
1. the microminiature laser module based on laser diode wafer encapsulation, it is characterized in that: comprise mounting cylinder (2), and being arranged in mounting cylinder (2) and the non-spherical lens (3) that collimates of the substrate (1) being integrated with semiconductor laser diode assembly, laser that semiconductor laser diode is sent, and intercepting laser major axis undesired light and there is the lens trim ring (4) of centre bore; Described substrate (1-2) is integrated with semiconductor laser diode wafer (1-1).
2. a kind of microminiature laser module based on laser diode wafer encapsulation according to claim 1, is characterized in that: described substrate (1) is arranged further promising semiconductor laser diode and provide the constant-current drive circuit of constant operating current or permanent merit drive circuit.
3. a kind of microminiature laser module based on laser diode wafer encapsulation according to claim 1, is characterized in that: the material of described substrate (1-2) is aluminium oxide, aluminium nitride or Rogers 4350 series.
4. a kind of microminiature laser module based on laser diode wafer encapsulation according to claim 1, is characterized in that: the pad coating of described substrate adopts gold-tin alloy coating.
5. a kind of microminiature laser module based on laser diode wafer encapsulation according to claim 1, is characterized in that: semiconductor laser diode adopts Composite Double based transistor as control chip, and its SOT-563 is provided with the erection space of 3 square millimeters.
6. a kind of microminiature laser module based on laser diode wafer encapsulation according to claim 1, it is characterized in that: described mounting cylinder is tubular structure, the inner space of mounting cylinder is divided into the first space and second space by pair of flanges by it, the line of centres of described pair of flanges and the axes normal of mounting cylinder.
7. a kind of microminiature laser module based on laser diode wafer encapsulation according to claim 6, it is characterized in that: the first bulk of described mounting cylinder is greater than second space size, described semiconductor laser diode assembly is fixed in the first space, and described non-spherical lens is fixed in described second space by pair of flanges and lens trim ring.
8. a kind of microminiature laser module based on laser diode wafer encapsulation according to claim 7, is characterized in that: the exterior contour size of described substrate is equal with the internal diameter in mounting cylinder first space.
9. a kind of microminiature laser module based on laser diode wafer encapsulation according to claim 7, it is characterized in that: centered by the axis of mounting cylinder, described pair of flanges is non-centrosymmetric structure, ensures that the luminous zone of semiconductor laser diode is just in time in the center of mounting cylinder.
10. a kind of microminiature laser module based on laser diode wafer encapsulation according to claim 1, it is characterized in that: described mounting cylinder uses 304 steel or Pb59-1 copper or aluminum alloy materials to make, its contour tolerance is less than 0.05mm, within concentricity 0.02mm; The rear cut-off distance of described non-spherical lens be 1.1mm and lens rear identity distance from semiconductor laser diode luminous zone 1mm; Described lens trim ring uses 304 steel or Pb59-1 copper or aluminum alloy materials to make, and blackening process, prevents beam reflection from causing disc of confusion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520828534.3U CN205004615U (en) | 2015-10-22 | 2015-10-22 | Subminiature laser module based on encapsulation of laser diode wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520828534.3U CN205004615U (en) | 2015-10-22 | 2015-10-22 | Subminiature laser module based on encapsulation of laser diode wafer |
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| CN205004615U true CN205004615U (en) | 2016-01-27 |
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| CN201520828534.3U Active CN205004615U (en) | 2015-10-22 | 2015-10-22 | Subminiature laser module based on encapsulation of laser diode wafer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106122798A (en) * | 2016-08-09 | 2016-11-16 | 上海禾赛光电科技有限公司 | Light source and method of work thereof |
| CN108183389A (en) * | 2018-01-30 | 2018-06-19 | 广东省半导体产业技术研究院 | A kind of laser diode and laser diode package method |
| CN108512030A (en) * | 2017-02-24 | 2018-09-07 | 中国科学院半导体研究所 | Laser beam emitting device |
-
2015
- 2015-10-22 CN CN201520828534.3U patent/CN205004615U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106122798A (en) * | 2016-08-09 | 2016-11-16 | 上海禾赛光电科技有限公司 | Light source and method of work thereof |
| CN106122798B (en) * | 2016-08-09 | 2023-06-16 | 上海禾赛科技有限公司 | Light source and working method thereof |
| CN108512030A (en) * | 2017-02-24 | 2018-09-07 | 中国科学院半导体研究所 | Laser beam emitting device |
| CN108183389A (en) * | 2018-01-30 | 2018-06-19 | 广东省半导体产业技术研究院 | A kind of laser diode and laser diode package method |
| CN108183389B (en) * | 2018-01-30 | 2023-09-29 | 广东省半导体产业技术研究院 | Laser diode and laser diode packaging method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: A subminiature laser module based on laser diode chip packaging Effective date of registration: 20220412 Granted publication date: 20160127 Pledgee: Xi'an innovation financing Company limited by guarantee Pledgor: ELITE OPTOELECTRONICS Co.,Ltd. Registration number: Y2022610000139 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20230423 Granted publication date: 20160127 Pledgee: Xi'an innovation financing Company limited by guarantee Pledgor: ELITE OPTOELECTRONICS Co.,Ltd. Registration number: Y2022610000139 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right |