CN205004312U - Two nitrogen protection injection apparatus - Google Patents
Two nitrogen protection injection apparatus Download PDFInfo
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- CN205004312U CN205004312U CN201520697549.0U CN201520697549U CN205004312U CN 205004312 U CN205004312 U CN 205004312U CN 201520697549 U CN201520697549 U CN 201520697549U CN 205004312 U CN205004312 U CN 205004312U
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- outer ring
- inner ring
- jet
- injection apparatus
- inlet channel
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Abstract
The utility model discloses a two nitrogen protection injection apparatus, the ultrapure water goes out the liquid hole and the nitrogen gas venthole sets up the inner circle jet and the outer lane jet is used for reaching perpendicularly slope injection nitrogen gas through encircleing at injection apparatus, in the ultrapure water washes the step, can form inside and outside twice nitrogen protection layer in the surperficial water layer outside of wafer to keep apart the oxygen contact in ultrapure water and the air, prevent the washmarking phenomenon, in the dry step of nitrogen gas, can be in the wafer surface forms in, three outer nitrogen gas spray layer to the rapid draing wafer, it has the not dry thorough problem of liquid drop on the wafer edge arris effectively to solve.
Description
Technical field
The utility model relates to semiconductor equipment manufacturing technology field, more specifically, relates to a kind of dinitrogen gas shielded injection apparatus for cleaning and drying crystal wafer in monolithic cleaning equipment.
Background technology
Current monolithic cleaning equipment mainly by the wafer (wafer) at High Rotation Speed on the surface jet cleaning liquid reach the object of cleaning.In cleaning process, wafer is subject to the multiple hold assembly clampings be arranged on circular card disc main body, and hold assembly holds wafer to carry out High Rotation Speed.Meanwhile, above wafer, cleaning equipment is also provided with spray arm, by spray arm to wafer surface jet cleaning medium.
Usually, the spray arm of cleaning equipment can comprise following three class spray patterns:
(1) chemical liquid, such as DHF etc. are sprayed;
(2) ultra-pure water is sprayed;
(3) N is sprayed
2.
At present, in DHF technical process, first spray DHF by spray arm to wafer surface, the natural oxidizing layer of wafer surface is eroded completely; Then spray ultra-pure water to rinse wafer surface, the residual liquor of wafer surface and product are washed out; Finally, then by spray N
2drying is carried out to wafer surface and completes whole technical process.
In above-mentioned DHF technical process, ultrapure water and N
2dry twice processing step is most important.If this twice technique controls bad, Watermark (washmarking) defect can be there is in wafer surface.The dominant mechanism that Watermark is formed is at N
2in dry run, react with oxygen and the SiO that generates because drying not exclusively remains in the water of wafer surface to have incorporated
2, and form H further
2siO
3or HSiO
3 -precipitation.After the water volatilization of wafer surface, namely these precipitations form the washmarking of flat condition.Therefore, the oxygen in control DHF technical process in ultra-pure water will be one of effective ways solving Watermark.
In addition, in above-mentioned cleaning process, also often occur Waffer edge rib there is the non-drying of drop phenomenon thoroughly, this also result in certain impact for wafer cleaning quality.
Therefore, there is the injection apparatus of a kind of new construction to be designed, so that can oxygen effectively in control DHF technical process in ultra-pure water, eliminate the generation of washmarking phenomenon, and can by the surperficial finish-drying of wafer.
Utility model content
The purpose of this utility model is the above-mentioned defect overcoming prior art existence; a kind of dinitrogen gas shielded injection apparatus is provided; the phenomenon causing producing washmarking can be entered in ultra-pure water by oxygen effectively in Controlling Technology process in air, and can solve on Waffer edge rib and have the non-drying of drop problem thoroughly.
For achieving the above object, the technical solution of the utility model is as follows:
A kind of dinitrogen gas shielded injection apparatus, for cleaning and drying crystal wafer in monolithic cleaning equipment, described injection apparatus comprises a body, described body is provided with for the feed pathway of jet cleaning liquid and the first ~ three inlet channel for spraying nitrogen, and described feed pathway is adjacent in the middle part of described body lower surface with the first inlet channel is provided with fluid hole and venthole; Described second inlet channel is provided with the inner ring jet around described fluid hole and venthole in described body lower surface, described 3rd inlet channel is provided with the outer ring jet around described fluid hole and venthole in the outside of described inner ring jet, described outer ring jet is towards the outer lower side of described body to being obliquely installed.
Preferably, described second inlet channel is provided with inner ring chamber around described feed pathway and the first inlet channel in described body, and described inner ring chamber is docked and connected described inner ring jet; Described 3rd inlet channel is provided with outer ring chamber around described feed pathway and the first inlet channel in described body, and described outer ring chamber is docked and connected described outer ring jet.
Preferably, described inner ring chamber is provided with a circle inner chamber aperture along the docking section of itself and described inner ring jet, and is communicated with described inner ring jet by described inner chamber aperture; Described outer ring chamber is provided with a circle exocoel aperture along the docking section of itself and described outer ring jet, and is communicated with described outer ring jet by described exocoel aperture.
Preferably, described inner ring jet or outer ring jet are that the spray-hole or that a circle is evenly arranged encloses continuous print injection air gap.
Preferably, described second inlet channel is provided with inner ring air inlet on the body, and described inner ring air inlet is communicated with described inner ring chamber; Described 3rd inlet channel is provided with outer ring air inlet on the body, and described outer ring air inlet is communicated with described outer ring chamber.
Preferably, described inner ring air inlet or outer ring air inlet arrange one to several in the periphery of described body.
Preferably, described feed pathway and the first inlet channel are that adjacent, parallel to be located in the middle part of described body and the feed tube of up/down perforation and air inlet pipe, described feed tube on the body lower surface is respectively equipped with inlet opening and fluid hole, and described air inlet pipe on the body lower surface is respectively equipped with air admission hole and venthole.
Preferably, the diameter of described inner ring spray-hole or the opening degree of injection air gap are more than or equal to the diameter of outer ring spray-hole or spray the opening degree of air gap.
Preferably, described outer ring jet is obliquely installed towards the drop point direction apart from Waffer edge 1 ~ 5cm.
Preferably, the injection direction of described inner ring jet vertically downward.
As can be seen from technique scheme, the utility model is used for vertical with outer ring jet by arranging inner ring jet at injection apparatus around ultra-pure water fluid hole and nitrogen venthole and tilts to spray nitrogen, in ultrapure water step, inside and outside twice nitrogen blanket can be formed outside the water layer of wafer surface, contact with the oxygen in air to isolate ultra-pure water, prevent washmarking phenomenon; In nitrogen drying step, can wafer surface formed interior, in, outer three road nitrogen jet layers, thus rapid draing wafer, effectively solves on Waffer edge rib and has the non-drying of drop problem thoroughly.
Accompanying drawing explanation
Fig. 1 is one of structural representation of a kind of dinitrogen gas shielded injection apparatus in the utility model one preferred embodiment;
Fig. 2 is the structural representation two of a kind of dinitrogen gas shielded injection apparatus in the utility model one preferred embodiment;
Fig. 3 is one of structure cutaway view of a kind of dinitrogen gas shielded injection apparatus in the utility model one preferred embodiment;
Fig. 4 is the structure cutaway view two of a kind of dinitrogen gas shielded injection apparatus in the utility model one preferred embodiment.
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model is described in further detail.
It should be noted that, in following embodiment, when describing execution mode of the present utility model in detail, in order to clearly represent structure of the present utility model so that explanation, special to the structure in accompanying drawing not according to general scale, and carried out partial enlargement, distortion and simplify processes, therefore, should avoid being understood in this, as to restriction of the present utility model.
In following embodiment of the present utility model; refer to Fig. 1 and Fig. 2; Fig. 1 is one of structural representation of a kind of dinitrogen gas shielded injection apparatus in the utility model one preferred embodiment; contour structures when its display is overlooked from the oblique upper of injection apparatus; Fig. 2 is the structural representation two of a kind of dinitrogen gas shielded injection apparatus in the utility model one preferred embodiment, contour structures when its display is overlooked from the oblique below of injection apparatus.A kind of dinitrogen gas shielded injection apparatus of the present utility model, for wafer surface jet cleaning liquid or gas, cleans wafer and drying.As shown in Figure 1, 2, a kind of dinitrogen gas shielded injection apparatus of the present utility model, comprise a body 1, the profile of body is roughly cylindrical, has upper and lower end face and sidepiece.Body is provided with feed pathway and first ~ the 3rd inlet channel, and feed pathway and first ~ the 3rd inlet channel is arranged on body interior, and is provided with corresponding import 2,3,6,7,9,10 and outlet 4,5,11,12 at body surface.Feed pathway is used for passing into pass-out cleaning liquid, and the first ~ three inlet channel is used for passing into pass-out nitrogen, and can certainly be that other have the gas of air-isolation effect, the utility model be not limited thereto.Wherein, described feed pathway and the first inlet channel adjacently in the middle part of the lower surface of described body are provided with fluid hole 4 and venthole 5 (please refer to Fig. 2), adjacently in the middle part of the upper surface of described body are provided with inlet opening 2 and air admission hole 3 (please refer to Fig. 1); Described second inlet channel is provided with air inlet 6 and 7 at the sidepiece of described body, be provided with inner ring jet 11 around described fluid hole 4 and venthole 5 in the lower surface of described body; Described 3rd inlet channel is provided with air inlet 9 and 10 at the sidepiece of described body, be provided with outer ring jet 12 around described fluid hole 4 and venthole 5 in the outside of described inner ring jet 11.Body 1 can be connected with spray arm in monolithic cleaning equipment, thus can move above wafer.Feed pathway can the liquid feeding pipeline of connection device, and the first ~ three inlet channel can the supply air line of connection device.In cleaning process; ultra-pure water is ejected to center wafer from fluid hole 4; nitrogen is ejected from inner ring jet 11 and outer ring jet 12; ultrapure water column is surrounded; at the inside and outside twice nitrogen blanket of the water layer outer side covers of wafer surface, can be used for isolating ultra-pure water and contact with the oxygen in air.
Refer to Fig. 3, Fig. 3 is one of structure cutaway view of a kind of dinitrogen gas shielded injection apparatus in the utility model one preferred embodiment, and its display is from the injection apparatus body construction during line of centres cutting of feed pathway and the second inlet channel.As shown in Figure 3, described second inlet channel is provided with the inner ring jet 11 around described fluid hole 4 and venthole 5 in described body lower surface.The injection direction of fluid hole, venthole and inner ring jet is all arrange vertically downward.Described 3rd inlet channel is provided with the outer ring jet 12 around described fluid hole 4 and venthole 5 in the outside of described inner ring jet 11, described outer ring jet, towards the outer lower side of described body to being obliquely installed, is namely arranged to form certain angle with vertical direction in outward direction.
Please continue to refer to Fig. 3.Described second inlet channel can be provided with an inner ring chamber 16 around described feed pathway 14 and the first inlet channel 15 in described body, and is carried out docking to be communicated with the inner ring jet 11 being similarly annular by the inner ring chamber 16 of annular.Inner ring chamber 16 for stored nitrogen, and by the difference in size between itself and inner ring jet 11 opening degree, makes gas obtain supercharging when flowing through inner ring jet, to strengthen the action effect that gas is injected in wafer surface.
Please continue to refer to Fig. 3.Also can enclose inner chamber aperture 8 at described inner ring chamber 16 along the docking section processing sets up one of itself and described inner ring jet 11, and make inner ring jet described in described inner ring chamber by described inner chamber aperture.Inner chamber aperture vertically can be arranged by diagram, also can arrange by other directions and be communicated with described inner ring jet.Described inner chamber aperture can make the gas in described inner ring chamber by the distribution of each inner chamber aperture, enters described inner ring jet equably, to improve the uniformity of the gas ejected from described inner ring jet.
Please continue to refer to Fig. 3.Described inner ring jet 11 can be processed as the spray-hole that a circle is evenly arranged, and the spacing between each spray-hole is arranged should ensure that the gas ejected from adjacent spray-hole can merge into a single whole, and avoids it to form discontinuous uniform breakpoint when arriving wafer surface; Also in the present embodiment, described inner ring jet can be processed as a circle continuous print and spray air gap 11, the gas of ejection can be made so more even.
Please continue to refer to Fig. 3.In order to pass into gas to described second inlet channel, the air inlet place that can be positioned on described body at described second inlet channel processes inner ring air inlet 6 or 7, and make described inner ring air inlet 6 or 7 be communicated with described inner ring chamber 16, thus form described second inlet channel being communicated with the through body formed by inner ring air inlet 6 or 7, inner ring chamber 16 (comprising inner chamber aperture 8) and inner ring jet 11.
Please continue to refer to Fig. 3.Described inner ring air inlet 6 or 7 can arrange one to several in the periphery of described body, can require the concrete quantity determining inner ring air inlet according to required gas flow, flow velocity and uniformity etc.In the present embodiment, inwardly process two the inner ring air inlets 6 and 7 be oppositely arranged at the sidepiece of described body.
Please continue to refer to Fig. 3.In order to make from venthole 5 center that arrive wafer vertical with the gas that fluid hole 4 ejects or liquid feed, and be suitable for inside and outside circle jet 11,12 with venthole and fluid hole for approximate centre is around setting, to improve injection uniformity when using, need that venthole 5 and fluid hole 4 are occupy middle part in body lower surface to arrange, and as far as possible close.And at intrinsic medium position, further described feed pathway and the first inlet channel can be processed into through body upper and lower side and the feed tube 14 of adjacent, parallel setting and air inlet pipe 15.Described feed tube 14 on the body lower surface is respectively equipped with inlet opening 2 and fluid hole 4, and inlet opening can be used for docking with the liquid feeding pipeline of cleaning equipment.Described air inlet pipe 15 on the body lower surface is respectively equipped with air admission hole 3 and venthole 5, and air admission hole can be used for docking with the supply air line of cleaning equipment.
Refer to Fig. 4 (can simultaneously combine with reference to figure 3); Fig. 4 is the structure cutaway view two of a kind of dinitrogen gas shielded injection apparatus in the utility model one preferred embodiment, and its display is from the injection apparatus body construction (positional structure that relative Fig. 3 turn 90 degrees partially) between feed pathway and the second inlet channel during cutting.As shown in Figure 4, described 3rd inlet channel can be provided with an outer ring chamber 17 around described feed pathway and the first inlet channel in described body, and is carried out docking to be communicated with the outer ring jet 12 being similarly annular by the outer ring chamber 17 of annular.Outer ring chamber also for stored nitrogen, and by the difference in size between itself and outer ring jet opening degree, makes gas obtain supercharging when flowing through outer ring jet, to strengthen the action effect that gas is injected in wafer surface.
Please continue to refer to Fig. 4.Also can enclose exocoel aperture 13 at described outer ring chamber 17 along the docking section processing sets up one of itself and described outer ring jet 12, and make described outer ring chamber 17 be communicated with described outer ring jet 12 by described exocoel aperture 13.Exocoel aperture vertically can be arranged by diagram, also can arrange by other directions and be communicated with described outer ring jet.Described exocoel aperture can make the gas in the chamber of described outer ring by the distribution of each exocoel aperture, enters described outer ring jet equably, to improve the uniformity of the gas ejected from described outer ring jet.
Please continue to refer to Fig. 4.Described outer ring jet 12 can be processed as the spray-hole that a circle is evenly arranged, and the spacing between each spray-hole is arranged should ensure that the gas ejected from adjacent spray-hole can merge into a single whole, and avoids it to form discontinuous uniform breakpoint when arriving wafer surface; Also in the present embodiment, described outer ring jet can be processed as a circle continuous print and spray air gap 12, the gas of ejection can be made so more even.
Please continue to refer to Fig. 4.In order to pass into gas to described 3rd inlet channel, the air inlet place that can be positioned on described body at described 3rd inlet channel processes outer ring air inlet 9 or 10, and make described outer ring air inlet 9 or 10 be communicated with described outer ring chamber 17, thus form described 3rd inlet channel being communicated with the through body formed by outer ring air inlet 9 or 10, outer ring chamber 17 (comprising exocoel aperture 13) and outer ring jet 12.
Please continue to refer to Fig. 4.Described outer ring air inlet 9 or 10 can arrange one to several in the periphery of described body, can require the concrete quantity determining outer ring air inlet according to required gas flow, flow velocity and uniformity etc.In the present embodiment, inwardly process two the outer ring air inlets 9 and 10 be oppositely arranged at the sidepiece of described body.Two outer ring air inlets 9 and 10 and two inner ring air inlet 6 and 7 intervals are symmetrically set in the sidepiece of body.
Please continue to refer to Fig. 3 and Fig. 4.The opening degree of inner ring jet 11 can be processed into the opening degree being more than or equal to outer ring jet 12, easily to control to make the gas flow of inner ring jet be greater than the gas flow of outer ring jet.Specifically, when inner ring jet be a circle inner ring spray-hole structure, outer ring jet be a circle outer ring spray-hole or spray gap structure time, the diameter of described inner ring spray-hole can be processed into the diameter that is more than or equal to outer ring spray-hole or spray the opening degree of air gap; When inner ring jet is when a circle inner ring sprays gap structure, outer ring jet is a circle outer ring spray-hole or spray gap structure, the opening degree that described inner ring sprays air gap can be processed into the diameter being more than or equal to outer ring spray-hole or the opening degree spraying air gap.In the present embodiment, the opening degree that inner ring can be sprayed air gap 11 is processed into and is more than or equal to the opening degree that air gap 12 is sprayed in outer ring.Further, diameter or the opening degree of described inner ring spray-hole or injection air gap 11 can be 1 ~ 3mm, and diameter or the opening degree of described outer ring spray-hole or injection air gap 12 can be 1 ~ 2mm.
Please continue to refer to Fig. 3 and Fig. 4.The injection direction of described outer ring jet 12 can be processed into and be obliquely installed towards the drop point direction apart from Waffer edge 1 ~ 5cm.Can according to the relative position relation between body and wafer when technique, determine that outer ring jet specifically offers position and angle of inclination on body.Such as, when the distance between body and wafer is comparatively large, wafer size is less, outer ring jet can be opened in the lower surface of body, and its angle of inclination is also less; Otherwise when the distance between body and wafer is less, wafer size is larger, outer ring jet can be opened in the sidepiece of the diagram nearly lower end of body, and its angle of inclination is also larger.Key to form the inside and outside circle jet structure arranged around fluid hole and venthole, and wafer surface can be covered when spraying nitrogen, forms inside and outside two-layer nitrogen blanket (or jetted layers).
Below to use the utility model above-mentioned dinitrogen gas shielded injection apparatus, in monolithic cleaning equipment, wafer to be cleaned and a kind of wafer cleaning method of drying is specifically described (can composition graphs 1 ~ Fig. 4 understood).
This wafer cleaning method comprises:
After chemical liquid cleaning step, carry out ultrapure water step, injection apparatus body is moved to center wafer top position, vertically ultra-pure water is sprayed to center wafer surface by the fluid hole arranged in the middle part of injection apparatus lower surface, simultaneously, the inner ring jet arranged around fluid hole by injection apparatus lower surface vertically sprays nitrogen to wafer surface, and tilt to spray nitrogen to wafer edge surface by the outer ring jet around inner ring jet arranged outside, with in the water layer outer side covers of wafer surface, outer twice nitrogen blanket, be used for isolating ultra-pure water to contact with the oxygen in air, prevent from producing Watermark (washmarking) defect in wafer surface, and carry out nitrogen drying step, stop spraying ultra-pure water, the venthole arranged by fluid hole contiguous in the middle part of injection apparatus lower surface vertically sprays nitrogen to center wafer surface, simultaneously, continue through injection apparatus lower surface and spray nitrogen with the inner ring jet that fluid hole is arranged to wafer surface is vertical around venthole, and tilt to spray nitrogen to wafer edge surface by the outer ring jet around inner ring jet arranged outside, in being formed in wafer surface, in, outer three road nitrogen jet layers, be used for rapid draing wafer, prevent from producing on the rib of Waffer edge have the non-drying of drop problem thoroughly.
As one preferred embodiment, in nitrogen drying step, by venthole, inner ring jet and outer ring jet spray nitrogen formed in, in, the injection flow of outer three road nitrogen jet layers can reduce successively, be beneficial to nitrogen wash away glibly to edge from center wafer, avoid producing interference mutually between the air-flow of three road nitrogen jet layers.Particularly, formed interior, in, the injection flow of outer three road nitrogen jet layers can be 80 ~ 100L/min, 20 ~ 30L/min, 10 ~ 20L/min successively.Further, the opening degree of described inner ring jet can be made to be more than or equal to the opening degree of outer ring jet, easily to control to make the gas flow of inner ring jet be greater than the gas flow of outer ring jet.Further, the opening degree of described inner ring jet can be 1 ~ 3mm, and the opening degree of described outer ring jet can be 1 ~ 2mm.Such as, when the opening degree of described inner ring jet is 2 ~ 3mm, the opening degree of described outer ring jet can be 1 ~ 2mm; As an example, the opening degree of described inner ring jet can be 2mm, and the opening degree of described outer ring jet can be 1mm or 2mm.
As one preferred embodiment, in ultrapure water step, the injection flow being sprayed the inside and outside twice nitrogen blanket that nitrogen is formed by inner ring jet and outer ring jet also reduces successively.
As one preferred embodiment, described outer ring jet can be made to tilt to spray nitrogen towards the drop point direction apart from Waffer edge 1 ~ 5cm, while the whole surface of comprehensive cover wafers, the edge of wafer can be dried up better, quickly like this.Further, at the end of nitrogen drying step, first can stop the nitrogen jet of venthole and inner ring jet, after time delay certain hour, then stop the nitrogen jet of outer ring jet, its objective is to solve on Waffer edge rib have the non-drying of drop problem thoroughly.Further, stop the delay time of outer ring jet nitrogen jet can be and be not less than 5 seconds.
In sum, the utility model is used for vertical with outer ring jet by arranging inner ring jet at injection apparatus around ultra-pure water fluid hole and nitrogen venthole and tilts to spray nitrogen, in ultrapure water step, inside and outside twice nitrogen blanket can be formed outside the water layer of wafer surface, contact with the oxygen in air to isolate ultra-pure water, prevent washmarking phenomenon; In nitrogen drying step, can wafer surface formed interior, in, outer three road nitrogen jet layers, thus rapid draing wafer, effectively solves on Waffer edge rib and has the non-drying of drop problem thoroughly.
Above-describedly be only preferred embodiment of the present utility model; described embodiment is also not used to limit scope of patent protection of the present utility model; therefore the equivalent structure that every utilization specification of the present utility model and accompanying drawing content are done changes, and in like manner all should be included in protection range of the present utility model.
Claims (10)
1. a dinitrogen gas shielded injection apparatus, for cleaning and drying crystal wafer in monolithic cleaning equipment, it is characterized in that, described injection apparatus comprises a body, described body is provided with for the feed pathway of jet cleaning liquid and the first ~ three inlet channel for spraying nitrogen, and described feed pathway is adjacent in the middle part of described body lower surface with the first inlet channel is provided with fluid hole and venthole; Described second inlet channel is provided with the inner ring jet around described fluid hole and venthole in described body lower surface, described 3rd inlet channel is provided with the outer ring jet around described fluid hole and venthole in the outside of described inner ring jet, described outer ring jet is towards the outer lower side of described body to being obliquely installed.
2. dinitrogen gas shielded injection apparatus according to claim 1, is characterized in that, described second inlet channel is provided with inner ring chamber around described feed pathway and the first inlet channel in described body, and described inner ring chamber is docked and connected described inner ring jet; Described 3rd inlet channel is provided with outer ring chamber around described feed pathway and the first inlet channel in described body, and described outer ring chamber is docked and connected described outer ring jet.
3. dinitrogen gas shielded injection apparatus according to claim 2, is characterized in that, described inner ring chamber is provided with a circle inner chamber aperture along the docking section of itself and described inner ring jet, and is communicated with described inner ring jet by described inner chamber aperture; Described outer ring chamber is provided with a circle exocoel aperture along the docking section of itself and described outer ring jet, and is communicated with described outer ring jet by described exocoel aperture.
4. the dinitrogen gas shielded injection apparatus according to claims 1 to 3 any one, is characterized in that, described inner ring jet or outer ring jet are that the spray-hole or that a circle is evenly arranged encloses continuous print injection air gap.
5. dinitrogen gas shielded injection apparatus according to claim 2, is characterized in that, described second inlet channel is provided with inner ring air inlet on the body, and described inner ring air inlet is communicated with described inner ring chamber; Described 3rd inlet channel is provided with outer ring air inlet on the body, and described outer ring air inlet is communicated with described outer ring chamber.
6. dinitrogen gas shielded injection apparatus according to claim 5, is characterized in that, described inner ring air inlet or outer ring air inlet arrange one to several in the periphery of described body.
7. dinitrogen gas shielded injection apparatus according to claim 1 and 2; it is characterized in that; described feed pathway and the first inlet channel are that adjacent, parallel to be located in the middle part of described body and the feed tube of up/down perforation and air inlet pipe; described feed tube on the body lower surface is respectively equipped with inlet opening and fluid hole, and described air inlet pipe on the body lower surface is respectively equipped with air admission hole and venthole.
8. dinitrogen gas shielded injection apparatus according to claim 4, is characterized in that, the diameter of described inner ring spray-hole or the opening degree of injection air gap are more than or equal to the diameter of outer ring spray-hole or spray the opening degree of air gap.
9. dinitrogen gas shielded injection apparatus according to claim 1, is characterized in that, described outer ring jet is obliquely installed towards the drop point direction apart from Waffer edge 1 ~ 5cm.
10. the dinitrogen gas shielded injection apparatus according to claims 1 to 3 any one, is characterized in that, the injection direction of described inner ring jet vertically downward.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520697549.0U CN205004312U (en) | 2015-09-10 | 2015-09-10 | Two nitrogen protection injection apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520697549.0U CN205004312U (en) | 2015-09-10 | 2015-09-10 | Two nitrogen protection injection apparatus |
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| Publication Number | Publication Date |
|---|---|
| CN205004312U true CN205004312U (en) | 2016-01-27 |
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ID=55161190
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520697549.0U Withdrawn - After Issue CN205004312U (en) | 2015-09-10 | 2015-09-10 | Two nitrogen protection injection apparatus |
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| CN (1) | CN205004312U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105070676A (en) * | 2015-09-10 | 2015-11-18 | 北京七星华创电子股份有限公司 | Double-nitrogen protection spraying device and wafer cleaning method using same |
-
2015
- 2015-09-10 CN CN201520697549.0U patent/CN205004312U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105070676A (en) * | 2015-09-10 | 2015-11-18 | 北京七星华创电子股份有限公司 | Double-nitrogen protection spraying device and wafer cleaning method using same |
| CN105070676B (en) * | 2015-09-10 | 2018-06-22 | 北京七星华创电子股份有限公司 | A kind of dinitrogen gas shielded injection apparatus and the wafer cleaning method using the device |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20160127 Effective date of abandoning: 20180622 |