CN204966960U - Semiconductor laser device - Google Patents
Semiconductor laser device Download PDFInfo
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- CN204966960U CN204966960U CN201520765461.8U CN201520765461U CN204966960U CN 204966960 U CN204966960 U CN 204966960U CN 201520765461 U CN201520765461 U CN 201520765461U CN 204966960 U CN204966960 U CN 204966960U
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- semiconductor laser
- laser chip
- radiator
- metal bonding
- medium layer
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Abstract
The utility model discloses an adopt the semiconductor laser device of novel metallic bonding method preparation, has the reliability, the advantage that the defect is few, make metallic bonding media layer and radiator surface's on the semiconductor laser device chip crucial laminiform one -tenth alloy phase structure through executing the heat and pressure pressurize, it combines inseparable mesh to reach semiconductor laser device chip and radiator, defects such as cavity have been reduced, when carrying out metallic bonding, the demand temperature is less than below the material fusing point of crucial layer, can reduce because great thermal stress that radiator and semiconductor laser device chip thermal expansion coefficient mismatched and lead to.
Description
Technical field
The utility model belongs to semiconductor laser encapsulation field, relates to a kind of semiconductor laser adopting novel metal bonding method to prepare.
Background technology
Current semiconductor laser great majority adopt the encapsulation technology of solder bond to prepare, namely at high temperature being melted by solder makes the radiator of chip of laser and a thermolysis or refrigerator combine, and is packaged into the device that can work.The encapsulation technology of current employing solder bond has the following disadvantages:
For the semiconductor laser adopting solder bond mode to encapsulate, owing to adding solder layer between chip metal layer and radiator or refrigerator, because this increasing the probability forming heat cavity, ultimately increasing the risk of laser fails, and having influence on reliability and the long term life of laser.
For the semiconductor laser adopting solder bond mode to encapsulate, its preparation technology is due to many solder layers, and technology controlling and process is comparatively complicated, also there will be the yield issues because solder problems causes, and makes its cost higher.
Utility model content
The object of the invention is to the shortcoming overcoming above-mentioned background technology, a kind of semiconductor laser adopting novel metal bonding method to prepare is provided.
The object of the invention is to solve by the following technical programs:
For a metal bonding methods for semiconductor laser, comprise the following steps:
(1) noise spectra of semiconductor lasers chip and radiator carry out surface preparation, make semiconductor laser chip surface, spreader surface is smooth, pollution-free, spreader surface roughness < 0.3 μm;
(2) the first metal bonding medium layer is plated in spreader surface, first metal bonding medium layer is followed successively by nickel (Ni), gold (Au), titanium (Ti), platinum (Pt) and gold (Au), in semiconductor laser chip plated surface second metal bonding medium layer, second metal bonding medium layer is followed successively by titanium (Ti), platinum (Pt), gold (Au), at the first metal bonding medium layer outer surface of spreader surface, key stratum is set, the material of described key stratum is indium (In), gold cadmium alloy (AuGe), gold-tin alloy (AuSn), SAC (SnAgCu) or indium stannum alloy (InSn) etc.,
(3) semiconductor laser chip is placed on radiator, and the positive pole-face (P face) of semiconductor laser chip and the key stratum surface of radiator are fitted; Noise spectra of semiconductor lasers chip, radiator heat under vacuum, and final temperature value controls the 80%-90% in key stratum material melting point value, and noise spectra of semiconductor lasers chip and radiator pressurize, and Stress control is at 0.03-0.1MPa/m
2, at final temperature insulation also pressurize 0.5-4 hour;
(4) negative electrode link plate is set in the negative pole face (N face) of semiconductor laser chip.
In above-mentioned steps two, described spreader surface plates the first metal bonding medium layer, and the thickness of described nickel (Ni) is 1.0 ~ 3.0 μm, and the thickness of titanium is 0.1-0.3 μm, and the thickness of platinum is 0.05-0.2 μm, and the thickness of gold is 0.1-0.3 μm; Described key stratum material thickness is 3-5 μm.
In above-mentioned steps three, described vacuum condition, vacuum degree is 10
-2-10
-4pa, the mode of heating is progressively warming up to final temperature, programming rate is 0.3 DEG C/s-1 DEG C/s, final temperature value is the 80%-90% of key stratum material melting point temperature value, at final temperature heat-insulation pressure keeping.
In above-mentioned steps three, the mode of described heating is that noise spectra of semiconductor lasers chip and radiator heat simultaneously.
Described semiconductor laser chip is single-shot light unit semiconductor laser chip or multi-illuminating unit semiconductor laser chip, described semiconductor laser chip number is 1 or multiple, the mode that electrically connects of described semiconductor laser chip be series connection or parallel connection electrically connect mode.
Use semiconductor laser structure prepared by metal bonding methods of the present invention, comprise semiconductor laser chip and radiator, also comprise the first metal bonding medium layer, second metal bonding medium layer and key stratum, the first described metal bonding medium layer is arranged on spreader surface, first metal bonding medium layer is followed successively by nickel (Ni), gold (Au), titanium (Ti), platinum (Pt) and gold (Au), the second described metal bonding medium layer is arranged on semiconductor laser chip surface, second metal bonding medium layer is followed successively by titanium (Ti), platinum (Pt), gold (Au), described key stratum is arranged on the first metallic media layer surface of radiator, described semiconductor laser chip and radiator are overall by key stratum atom counterdiffusion bonding, and the positive pole-face of semiconductor laser chip (P face) fits with the key stratum surface of radiator, the negative pole face (N face) of described semiconductor laser chip is provided with negative electrode brace.
In semiconductor laser prepared by above-mentioned use metal bonding methods of the present invention, the first metal bonding medium layer, the thickness of nickel is 1.0-3.0 μm, and the thickness of titanium is 0.1-0.3 μm, and the thickness of platinum is 0.05-0.2 μm, and the thickness of gold is 0.1-0.3 μm; Described key stratum material is indium (In), golden cadmium alloy (AuGe), gold-tin alloy (AuSn), SAC (SnAgCu) or indium stannum alloy (InSn) etc., and described key stratum material thickness is 3-5 μm.
In semiconductor laser prepared by above-mentioned use metal bonding methods of the present invention, described semiconductor laser chip is single-shot light unit semiconductor laser chip or multi-illuminating unit semiconductor laser chip.
The negative pole face (N face) of described semiconductor laser chip arranges negative electrode brace, can be also can be directly arrange sheet metal as negative straps by the mode of gold thread bonding.
Principle of the present invention is as follows:
Arrange key stratum between semiconductor laser chip and radiator material, at certain temperature (80% ~ 90% of key stratum fusing point) and certain pressure, two flat surfaces fit tightly.The pressurize certain hour under suitable heat and pressure effect at chip and key stratum interface atom, the counterdiffusion of metal level atom generation phase, and then realize the bonding of semiconductor laser chip and radiator.The bonding quality of the method is high, intensity is large, heat and pressure promote the counterdiffusion of metal level atom generation phase, destroy the oxide layer on interface simultaneously, make the gravisphere reaching atom between metal and Metal Contact face, thus make to produce attraction between atom, reach the object of bonding.Under certain heat and pressure, the structured metal layer atom of chip and the structured metal layer atom of radiator spread mutually, the structured metal layer of being combined into one, adhesion is better on the one hand, on the one hand, substantially maintain the contour structures of chip and radiator, as indeformable, can make semiconductor laser bar obtain close to zero near field non-linear (smile) value.Key stratum atom counterdiffusion speed depends on temperature, pressure and time, and maximum temperature is by the restriction of thermal budget.The lifting surface area of semiconductor laser chip should be consistent with chip and radiator overlapping area, avoids discontinuity.
The present invention has the following advantages:
The reliability of semiconductor laser using semiconductor laser metallic bond legal manner of the present invention to prepare is high, defect is few, the key stratum of the metal bonding medium layer on semiconductor laser chip and spreader surface is made to form phase structure of alloy by heating pressurization pressurize, reach semiconductor laser chip and the compact object of radiator, reduce the defects such as cavity, when carrying out metal bonding, demand temperature is comparatively lower than below key stratum material melting point, can reduce because radiator and semiconductor laser chip thermal coefficient of expansion do not mate the larger thermal stress caused.
Accompanying drawing explanation
Fig. 1 is that embodiment of the present invention structure disassembles schematic diagram.
Fig. 2 is embodiment of the present invention structural representation.
Drawing reference numeral illustrates: 1 is semiconductor laser chip; 2 is radiator; 3 is the first metal bonding medium layer; 4 is the second metal bonding medium layer; 5 is key stratum.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail:
Be that embodiment of the present invention structure disassembles schematic diagram see Fig. 1, Fig. 2 is embodiment of the present invention structural representation.
Semiconductor laser metal bonding methods of the present invention, comprises the following steps:
(1) noise spectra of semiconductor lasers chip 1 and radiator 2 carry out surface preparation, make semiconductor laser chip 1 surface, radiator 2 surface no-pollution, spreader surface roughness < 0.3 μm;
(2) in radiator 2 plated surface first metal bonding medium layer 3, first metal bonding medium layer 3 is followed successively by nickel (Ni), gold (Au), titanium (Ti), platinum (Pt) and gold (Au), semiconductor laser chip 1 plated surface second metal bonding medium layer 4, second metal bonding medium layer 4 is followed successively by titanium (Ti), platinum (Pt), gold (Au), at first metal bonding medium layer 3 outer surface on radiator 2 surface, key stratum 5 is set, the material of described key stratum 5 is indium (In), gold cadmium alloy (AuGe), gold-tin alloy (AuSn), SAC (SnAgCu) or indium stannum alloy (InSn) etc.,
(3) semiconductor laser chip 1 is placed on radiator 2, and the positive pole-face (P face) of semiconductor laser chip 1 and key stratum table 5 face of radiator 2 are fitted; Noise spectra of semiconductor lasers chip 1, radiator 2 heat under vacuum, and final temperature value controls the 80%-90% in key stratum 5 material melting point value, and noise spectra of semiconductor lasers chip 1 and radiator 2 pressurize, and Stress control is at 0.03-0.1MPa/m
2, at final temperature insulation also pressurize 0.5-4 hour;
(4) negative electrode brace is set in the negative pole face (N face) of semiconductor laser chip 1.
In above-mentioned steps two, described radiator 2 plated surface first metal bonding medium layer 3, the thickness of described nickel (Ni) is 1.0 μm or 2.0 μm or 3.0 μm, and thickness is 1.0 μm-3.0 μm; The thickness of titanium (Ti) is 0.1-0.3 μm, can be 0.1 μm, 0.15 μm, 0.2 μm, 0.25 μm or 0.3 μm; The thickness of platinum (Pt) is 0.05 μm-0.2 μm; The thickness of gold (Au) is 0.1 μm-0.3 μm; Key stratum 5 material thickness is 3-5 μm, can be 3 μm, 3.5 μm, 4 μm or 5 μm.
Vacuum condition described in above-mentioned steps three, vacuum degree is 10
-2-10
-4pa, the mode of heating is progressively warming up to final temperature, programming rate is 0.3 DEG C/s-1 DEG C/s, final temperature value is the 80%-90% of key stratum material melting point temperature value, at final temperature heat-insulation pressure keeping.Heat up from room temperature by semiconductor laser chip 1 and radiator 2 and be heated to the 80%-90% of key stratum 5 material melting point temperature value, be key stratum 5 material as selected In, the fusing point of In is 156 DEG C, then progressively heat temperature raising in step 3, control final temperature value at In material melting point temperature value 80%-90%, the i.e. 80%-90% of 156 degrees Celsius, namely final temperature is 124 DEG C about-140 DEG C, and heat-insulation pressure keeping 0.5 ~ 4 hour at this temperature.
In above-mentioned steps three, the mode of described heating is that noise spectra of semiconductor lasers chip 1 and radiator 2 heat simultaneously, namely use contact heating or radiation source heats or other mode at heating noise spectra of semiconductor lasers chip 1 and radiator 2 simultaneously, make semiconductor laser chip 1 consistent with the heating rate of radiator 2, make homogeneous heating.
Described semiconductor laser chip 1 is single-shot light unit semiconductor laser chip or multi-illuminating unit semiconductor laser chip.
Use semiconductor laser structure prepared by metal bonding methods of the present invention as depicted in figs. 1 and 2, comprise semiconductor laser chip 1 and radiator 2, also comprise the first metal bonding medium layer 3, second metal bonding medium layer 4 and key stratum 5, the first described metal bonding medium layer 3 is arranged on radiator 2 surface, first metal bonding medium layer 3 is followed successively by nickel (Ni), gold (Au), titanium (Ti), platinum (Pt) and gold (Au), the second described metal bonding medium layer 4 is arranged on semiconductor laser chip 1 surface, second metal bonding medium layer 4 is followed successively by titanium (Ti), platinum (Pt), gold (Au), described key stratum 5 is arranged on the first metallic media layer 3 surface of radiator 2, described semiconductor laser chip 1 and radiator 2 are overall by key stratum 5 bonding and the positive pole-face of semiconductor laser chip 1 (P face) fits with key stratum 5 surface of radiator 2, the negative pole face (N face) of described semiconductor laser chip 1 is provided with negative electrode brace.
In semiconductor laser prepared by above-mentioned use metal bonding methods of the present invention, described semiconductor laser chip 1 is single-shot light unit semiconductor laser chip or multi-illuminating unit semiconductor laser chip.
The negative pole face (N face) of described semiconductor laser chip 1 arranges negative electrode brace, can be also can be directly arrange sheet metal as negative straps by the mode of gold thread bonding.
Claims (4)
1. a semiconductor laser, it is characterized in that: comprise semiconductor laser chip and radiator, also comprise the first metal bonding medium layer, second metal bonding medium layer and key stratum, the first described metal bonding medium layer is arranged on spreader surface, first metal bonding medium layer is followed successively by nickel, gold, titanium, platinum and gold, the second described metal bonding medium layer is arranged on semiconductor laser chip surface, second metal bonding medium layer is followed successively by titanium, platinum, gold, described key stratum is arranged on the first metallic media layer surface of radiator, described semiconductor laser chip and radiator are overall by key stratum bonding, and the key stratum surface of the positive pole-face of semiconductor laser chip and radiator fits, the negative pole face of described semiconductor laser chip is provided with negative electrode brace.
2. semiconductor laser according to claim 1, is characterized in that: the first described metal bonding medium layer, and the thickness of nickel is 1.0-3.0 μm, and the thickness of titanium is 0.1-0.3 μm, and the thickness of platinum is 0.05-0.2 μm, and the thickness of gold is 0.1-0.3 μm; Described key stratum material is indium, golden cadmium alloy, gold-tin alloy, SAC or indium stannum alloy, and described key stratum material thickness is 3-5 μm.
3. semiconductor laser according to claim 1, it is characterized in that: described semiconductor laser chip is single-shot light unit semiconductor laser chip or multi-illuminating unit semiconductor laser chip, described semiconductor laser chip number is 1 or multiple, the mode that electrically connects of described semiconductor laser chip be series connection or parallel connection electrically connect mode.
4. semiconductor laser according to claim 1, it is characterized in that: the negative pole face of described semiconductor laser chip arranges negative electrode brace, the mode arranging electrode connecting piece is arranged by the mode of gold thread bonding or directly arranges sheet metal as negative electrode brace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520765461.8U CN204966960U (en) | 2015-09-30 | 2015-09-30 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520765461.8U CN204966960U (en) | 2015-09-30 | 2015-09-30 | Semiconductor laser device |
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|---|---|
| CN204966960U true CN204966960U (en) | 2016-01-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520765461.8U Active CN204966960U (en) | 2015-09-30 | 2015-09-30 | Semiconductor laser device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106229799A (en) * | 2016-09-13 | 2016-12-14 | 深圳大学 | A kind of miniature laser system |
| WO2017054719A1 (en) * | 2015-09-30 | 2017-04-06 | 西安炬光科技股份有限公司 | Metal bonding method for semiconductor laser and semiconductor laser prepared by using same |
-
2015
- 2015-09-30 CN CN201520765461.8U patent/CN204966960U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017054719A1 (en) * | 2015-09-30 | 2017-04-06 | 西安炬光科技股份有限公司 | Metal bonding method for semiconductor laser and semiconductor laser prepared by using same |
| CN106229799A (en) * | 2016-09-13 | 2016-12-14 | 深圳大学 | A kind of miniature laser system |
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