CN204927244U - Connection structure body - Google Patents
Connection structure body Download PDFInfo
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- CN204927244U CN204927244U CN201520532250.XU CN201520532250U CN204927244U CN 204927244 U CN204927244 U CN 204927244U CN 201520532250 U CN201520532250 U CN 201520532250U CN 204927244 U CN204927244 U CN 204927244U
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- conducting particles
- electrode
- salient pole
- circuit
- anisotropic conductive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- Non-Insulated Conductors (AREA)
- Manufacturing Of Electrical Connectors (AREA)
Abstract
The utility model provides a connection structure body, this connection structure body is the first circuit component that has the range first electrode of the solidfied material through the anisotropic electric conductivity membrane that contains the conducting particles and arrange the connection structure body who has the second circuit structrual joint of comparing the second electrode that thickness is little with the first electrode to form, in the solidfied material of anisotropic electric conductivity membrane, be arranged in the scope 200% below and half the arbitrary great within range of scope that is equivalent to first electrode thickness from the installation face of first circuit member to conducting particles mean diameter that lie in of the regional conducting particles of central authorities between the first electrode more than 90%.
Description
Technical field
The utility model relates to connection structural bodies.
Background technology
In the past, at the connection of such as liquid crystal display and carrier package (TCP), flexible printed board (FPC) with the connection of TCP or the connection of FPC and printing distributing board, be used in adhesive film the anisotropic conductive film being dispersed with conducting particles.In addition, when semiconductor silicon chips is installed on substrate, also carries out so-called glass top chip (COG) the replacement wire-bonded in the past semiconductor silicon chips being directly installed on substrate, also using anisotropic conductive film at this.
In recent years, along with the development of electronic equipment, constantly carry out the densification of distribution, the multifunction of circuit.Consequently, require that the interval between electrode becomes the connection structural bodies being such as less than or equal to 15 μm, the salient pole of circuit member also small size and closely-spacedization gradually.For such projection connects, in order to obtain stable electrical connection, need to make the conducting particles of quantity sufficient between salient pole and the circuit electrode of substrate-side.
For such problem, such as in patent documentation 1 (Japanese Unexamined Patent Publication 6-45024 publication) and patent documentation 2 (Japanese Unexamined Patent Publication 2003-49152 publication), carry out the conducting particles path in anisotropic conductive film to improve the method for particle density, used the method had containing the bond layer of conducting particles and the anisotropic conductive film of this double-layer structure of insulating properties bond layer.In addition, such as in patent documentation 3 (Japanese Unexamined Patent Publication 2010-027847 publication) and patent documentation 4 (Japanese Unexamined Patent Publication 2012-191015 publication), substrate is provided with wall, the projection of the conducting particles flowing hindered in anisotropic conductive film, and the capture rate achieving the conducting particles between salient pole and circuit electrode improves.And then, in patent documentation 5 (Japanese Unexamined Patent Publication 2011-109156 publication), define the average grain diameter etc. of conducting particles, and disclose conducting particles with the connection structural bodies of certain proportion segregation in substrate-side.
On the other hand, in patent documentation 6 (Japanese Unexamined Patent Publication 2001-240816 publication), disclose in the bond layer had containing conducting particles and the anisotropic conductive film not containing this double-layer structure of insulating properties bond layer of conducting particles, the bond layer containing conducting particles is configured at the connection structural bodies of IC side.In addition, in patent documentation 7 (Japanese Unexamined Patent Publication 5-206208 publication), the syndeton utilizing the anisotropic conductive film making conducting particles segregation in position corresponding to the projection periphery with IC is disclosed.
Utility model content
In addition, when using anisotropic conductive film to be connected with circuit electrode by salient pole, salient pole can produce position deviation in direction relative to circuit electrode in the face of installed surface sometimes.Think: if produce the position deviation of salient pole and circuit electrode, then owing to originally not having helpful conducting particles to the electrical connection of salient pole and circuit electrode, circuit electrode is electrically connected with other adjacent electrodes, causes short circuit.
The utility model completes to solve above-mentioned problem, its object is to, even if provide the connection structural bodies that also can suppress short circuit when creating the position deviation of electrode.
In order to solve above-mentioned problem, the feature of the connection structural bodies involved by the utility model is, it is the connection structural bodies be formed by connecting by the second circuit component of the second little with being arranged with thickness compared with the first electrode for the first circuit member being arranged with the first electrode electrode by the solidfied material of the anisotropic conductive film containing conducting particles, in the solidfied material of anisotropic conductive film, more than 90% of the conducting particles of the middle section between the first electrode be arranged in from the installed surface of the first circuit member to conducting particles average grain diameter less than 200% scope and be equivalent to the arbitrary larger scope of scope of half of the first thickness of electrode.
In this connection structural bodies, about the solidfied material of anisotropic conductive film, more than 90% of the conducting particles of the middle section between the first electrode be arranged in from the installed surface of the first circuit member to conducting particles average grain diameter less than 200% scope and be equivalent to the arbitrary larger scope of scope of half of the first thickness of electrode.Therefore, even if the first electrode creates position deviation relative to the second electrode, the second electrode also can be prevented to be electrically connected by conducting particles with other adjacent electrodes, the short circuit of circuit can be suppressed.
Accompanying drawing explanation
Fig. 1 is for representing the schematic section of an execution mode of the connection structural bodies involved by the utility model.
Fig. 2 is the diagrammatic top view of an example of the arrangement of salient pole in expression first circuit member.
Schematic section is amplified in the emphasis portion that Fig. 3 is the connection structural bodies shown in Fig. 1.
Fig. 4 is the schematic section of the execution mode representing anisotropic conductive film.
Fig. 5 is for representing the schematic section of the manufacturing process of the connection structural bodies shown in Fig. 1.
Fig. 6 is the schematic section of the subsequent handling representing Fig. 5.
Fig. 7 is for representing the schematic section of the manufacturing process of the anisotropic conductive film shown in Fig. 4.
Fig. 8 is in the connection structural bodies involved by comparative example, and schematic section is amplified in the emphasis portion when salient pole and circuit electrode create position deviation.
Fig. 9 is in the connection structural bodies involved by embodiment, and schematic section is amplified in the emphasis portion when salient pole and circuit electrode create position deviation.
The scanning electron microscope photo in the cross section of the connection structural bodies of Figure 10 involved by embodiment 1.
The scanning electron microscope photo in the cross section of the connection structural bodies of Figure 11 involved by comparative example 1.
The scanning electron microscope photo in the cross section of the connection structural bodies of Figure 12 involved by comparative example 4.
Embodiment
Below, with reference to accompanying drawing, the manufacture method of the connection structural bodies involved by the utility model and the preferred implementation of connection structural bodies is explained.
Fig. 1 is for representing the schematic section of an execution mode of the connection structural bodies involved by the utility model.As shown in the drawing, connection structural bodies 1 is by possessing the first circuit member 2 respect to one another and second circuit component 3 and the solidfied material 4 of anisotropic conductive film that is connected by these circuit members 2,3 and forming.
First circuit member 2 is such as carrier package (TCP), printing distributing board, semiconductor silicon chips etc.First circuit member 2 has multiple salient pole (the first electrode) 6 in the installed surface 5a side of main part 5.Salient pole 6 is such as elongated oblong-shaped as shown in Figure 2 when overlooking, and according to the mode that position is different each other between adjacent row with staggered (Qian Birds shape) arrangement.
In addition, being spaced apart between adjacent salient pole 6,6 is such as more than or equal to 5 μm and is less than 20 μm, and the thickness of salient pole 6 is for being such as more than or equal to 3 μm and being less than 18 μm.The formation materials'use such as Au etc. of salient pole 6, easy distortion compared with the conducting particles P contained by the solidfied material 4 of anisotropic conductive film.In addition, on installed surface 5a, also can form insulating barrier in the part not forming salient pole 6.In addition, in Fig. 2, salient pole 6 is arranged in 2 row, but the number of permutations also can be more than or equal to 3 row.
Second circuit component 3 be such as liquid crystal display ITO, IZO or defined glass substrate or plastic base, flexible printed board (FPC), the ceramic wiring board etc. of circuit by metal etc.As shown in Figure 1, second circuit component 3 has the multiple circuit electrodes (second electrode) 8 corresponding with salient pole 6 in the installed surface 7a side of main part 7.In the same manner as salient pole 6, circuit electrode 8 is such as elongated oblong-shaped when overlooking, and is arranged in a staggered according to the mode that position is different each other between adjacent row.
In addition, being spaced apart between adjacent circuit electrode 8,8 is such as more than or equal to 5 μm and is less than 20 μm, and the thickness of circuit electrode 8 is fully little compared with salient pole 6, is such as about 100nm.The surface of circuit electrode 8 is made up of one or more materials be selected from such as gold, silver, copper, tin, ruthenium, rhodium, palladium, osmium, iridium, platinum, indium tin oxide (ITO) and indium-zinc oxide (IZO).In addition, at installed surface 7a, also insulating barrier can be formed in the part not forming circuit electrode 8.
The solidfied material 4 of anisotropic conductive film is the layer using anisotropic conductive film 11 (with reference to Fig. 4) described later and formed, and has the first area 9 of being solidified by conductive adhesive layer 13 and the second area 10 solidified by insulating properties bond layer 14.In present embodiment, first area 9 is positioned at the first circuit member 2 side, and second area 10 is positioned at second circuit component 3 side.Be explained, in present embodiment, for convenience of explanation, the layer containing conducting particles P be called conductive adhesive layer, insulating properties bond layer will be called containing the layer of conducting particles P, but to form this two-layer bonding agent composition itself be dielectric.
As shown in Figure 3, conducting particles P is present between salient pole 6 and circuit electrode 8, and between adjacent salient pole 6,6.Between salient pole 6 and circuit electrode 8, conducting particles P is present between salient pole 6 and circuit electrode 8 with the state of being a little flattened out of shape by crimping.Thus, the electrical connection between salient pole 6 and circuit electrode 8 is achieved.
On the other hand, between adjacent salient pole 6,6, helpful conducting particles P segregation is not had in the first circuit member 2 side to the electrical connection of salient pole 6 and circuit electrode 8.Between adjacent salient pole 6,6, conducting particles P is in state separated from one another, thus achieves the electric insulation between circuit electrode 8,8 between adjacent salient pole 6,6 and adjacent.During crimping, due to the flowing of the bonding agent composition of anisotropic conductive film 11, sometimes the conducting particles P be positioned near salient pole 6 can move to second circuit component 3 side, but more than 90% of the conducting particles P of middle section between adjacent salient pole 6,6 scope being positioned at less than 200% of the average grain diameter of the installed surface 5a to conducting particles P from the first circuit member 2, is preferably the scope of less than 150%, is more preferably the scope of less than 130%.
Be explained, the middle section between adjacent salient pole 6,6 refers to the region that at least conducting particles P does not contact with salient pole 6.This middle section can be defined as, by the scope except the region within 130% of the conducting particles average grain diameter each side from adjacent salient pole 6,6.
[formation of anisotropic conductive film]
Fig. 4 is for representing the schematic section for the manufacture of an execution mode of the anisotropic conductive film of the connection structural bodies shown in Fig. 1.As shown in the drawing, anisotropic conductive film 11 is to be formed stripping film 12, the mode that stacked gradually by the insulating properties bond layer 14 do not formed containing the bond layer of conducting particles P and the conductive adhesive layer 13 formed by the bond layer containing conducting particles P.Conducting particles P is with the state dispersion of segregation in the one side side of anisotropic conductive film 11.
Stripping film 12 is formed by such as PETG (PET), polyethylene, polypropylene etc.Stripping film 12 can contain arbitrary filler.In addition, demoulding process, plasma treatment etc. can be applied to the surface of stripping film 12.
The bond layer forming conductive adhesive layer 13 and insulating properties bond layer 14 contains such as curing agent, monomer and film formation material.When using epoxy monomer, as curing agent, imidazoles system, hydrazides system, boron trifluoride-amine complex, sulfosalt, amine acid imide, polyamine salt, dicyandiamide etc. can be enumerated.When to be coated to by curing agent by polyurethane series, Polyester polymer substance etc. and to carry out microencapsulation, the up time extends, and is therefore suitable.On the other hand, when using acrylic monomers, as curing agent, peroxide compound, Azo etc. can be enumerated and decompose by heating and the material producing free free radical.
Use curing agent during epoxy monomer, connect temperature, connect hours, storage stability etc. according to target and select aptly.From the view point of high response, the gel time of preferred consolidation agent and composition epoxy resin is within 10 seconds at an established temperature, from the view point of storage stability, be preferably after taking care of 10 with 40 DEG C in thermostat and do not have vicissitudinous sulfosalt with the gel time of composition epoxy resin.
Use curing agent during acrylic monomers, connect temperature, connect hours, storage stability etc. according to target and select aptly.From the viewpoint of high response and storage stability, the temperature of 10 hours preferred half-life is more than or equal to 40 DEG C and the temperature of 1 minute half-life is less than or equal to organic peroxide or the Azo of 180 DEG C, and more preferably the temperature of 10 hours half-life is more than or equal to 60 DEG C and the temperature of 1 minute half-life is less than or equal to organic peroxide or the Azo of 170 DEG C.These curing agent can be used alone or as a mixture, also can mixed decomposition promoter, inhibitor etc. and use.
When using any one of epoxy monomer and acrylic monomers, when the connect hours was set to below 10 seconds, in order to obtain sufficient reactivity, the use level of curing agent is relative to total 100 mass parts of aftermentioned monomer and aftermentioned film formation material, all be preferably 0.1 mass parts ~ 40 mass parts, be more preferably 1 mass parts ~ 35 mass parts.Being more than or equal to 0.1 mass parts by the use level of curing agent being set to, sufficient reactivity can be obtained, easily realize good adhesive strength and low contact resistance.On the other hand, being less than or equal to 40 mass parts by the use level of curing agent being set to, easily realizing the mobility of good bonding agent, the storage stability of bonding agent and good contact resistance.
In addition, when using epoxy monomer as monomer, can use by the derivative bisphenol-type epoxy resin such as chloropropylene oxide and bisphenol-A, Bisphenol F, bisphenol-A D; The epoxy-Novolak resin derived by chloropropylene oxide and phenol novolacs, cresol novolak; Glycidyl amine, glycidol ether, biphenyl, ester ring type etc. have the various epoxy compoundss etc. of two or more glycidyl in a molecule.They can be used alone one, also can be used in combination two or more.
When using acrylic monomers, free-radical polymerised compound preferably has the material of the group be polymerized by free radical.As such free-radical polymerised compound, (methyl) acrylate, maleimide compound, styrene derivative etc. can be enumerated.They can be used alone one, also can be used in combination two or more.In addition, free-radical polymerised compound can use with any state of monomer or oligomer, also can by monomer and oligomer used in combination.
Film formation material makes the processing ease of the liquid composition containing above-mentioned curing agent and monomer.As film formation material, be applicable to using thermoplastic resin, phenoxy resin, vinyl-formal resin, polystyrene resin, polyvinyl butyral resin, mylar, polyacrylic resin, polyester polyurethane resin etc. can be enumerated.And then, can siloxane bond, fluoro substituents be contained in these polymer.These resins can be used alone or used in combination two or more.In above-mentioned resin, from the viewpoint of adhesive strength, intermiscibility, thermal endurance and mechanical strength, preferably use phenoxy resin.
The molecular weight of thermoplastic resin is larger, more easily obtains film formative, and, wide region can be set to using to the influential melt viscosity of mobility as anisotropic conductive film.The molecular weight of thermoplastic resin is preferably counted 5000 ~ 150000 with weight average molecular weight, is particularly preferably 10000 ~ 80000.Being more than or equal to 5000 by weight average molecular weight being set to, easily obtaining good film formative, being less than or equal to 150000 by being set to, easily obtain the good intermiscibility with other compositions.
Be explained, in the utility model, weight average molecular weight refers to according to following condition, by gel permeation chromatography (GPC), uses the value of the standard curve determination of polystyrene standard.
(condition determination)
Device: TOSOH Co., Ltd GPC-8020
Detector: TOSOH Co., Ltd RI-8020
Post: Hitachi Chemical Co., Ltd. GelpackGLA160S+GLA150S
Sample solution concentration: 120mg/3mL
Solvent: oxolane
Injection rate: 60 μ L
Pressure: 2.94 × 10
6pa (30kgf/cm
2)
Flow: 1.00mL/min
In addition, the content of film formation material, with the total amount of monomer and film formation material for benchmark, is preferably 5 % by weight ~ 80 % by weight, is more preferably 15 % by weight ~ 70 % by weight.Being more than or equal to 5 % by weight by being set to, good film formative can be obtained, and, being less than or equal to 80 % by weight by being set to, having solidification compound to show the tendency of good mobility.
In addition, the bond layer forming conductive adhesive layer 13 and insulating properties bond layer 14 can contain filler, softening agent, promoter, age resister, colouring agent, fire-retardant agent, thixotropic agent, coupling agent and phenolic resins, melmac, isocyanates etc. further.When containing filler, more can expect the raising of connection reliability.
As conducting particles P, metallic or the carbon particles etc. such as such as gold, silver, nickel, copper, solder can be enumerated.In order to obtain the storage stability of conducting particles P, the top layer of preferred conducting particles P is not the transition metal-types such as copper, but the precious metal that the platinum such as gold, silver belong to, in them, more preferably gold.In addition, nickel surface can be coated to by precious metal such as Au.And then, also can use the material being coated to dielectric glass, pottery, plastics etc. by conductive materials such as above-mentioned metals, in this situation, also can nickel dam is set and form sandwich construction.
In addition, use when being coated to the material of non-conductive plastic etc., hot molten metal particle as conducting particles P by conductive materials, because conducting particles P is easily out of shape by heating pressurization, when therefore connecting and the contact area of electrode increase, thus the thickness deviation of absorbing circuit member side and can connection reliability be improved.In addition, also contact resistance can be reduced by arranging projection on conducting particles P surface.
The average grain diameter of conducting particles P is preferably greater than or equal to 2.5 μm and be less than or equal to 6.0 μm.Being more than or equal to 2.5 μm by the average grain diameter of conducting particles P being set to, the coating accuracy to stripping film 12 can be maintained, thus easily make conducting particles P be scattered in well in conductive adhesive layer 13.Being less than or equal to 6.0 μm by the average grain diameter of conducting particles P being set to, easily maintaining the insulating properties between the circuit electrode 8,8 adjoined in connection structural bodies 1.In order to obtain the good dispersion of conducting particles P, the average grain diameter of conducting particles P more preferably greater than or equal 2.7 μm, further preferably greater than or equal to 3 μm.On the other hand, from the viewpoint of the insulating properties guaranteed between circuit electrode 8,8 adjacent connection structural bodies 1, the average grain diameter of conducting particles P is more preferably less than or equals 5.5 μm, is preferably less than or equal to 5 μm further.
The average grain diameter of conducting particles P carries out particle size determination by using the observation of scanning electron microscope (SEM) to arbitrary 300 conducting particless, gets their mean value and obtains.Be explained, when conducting particles P has projection, when being not spherical, the particle diameter of conducting particles P is the circumscribed diameter of conducting particles in SEM image.
Relative to composition 100 parts by volume beyond conducting particles P, the use level of conducting particles P is preferably 1 parts by volume ~ 100 parts by volume.From preventing because conducting particles P exists the too much viewpoint of the short circuit of the adjacent circuit electrode 8,8 caused, the use level of conducting particles P is more preferably 10 parts by volume ~ 50 parts by volume.And then be preferably more than or equal to 2.5 μm in the average grain diameter of conducting particles and be less than or equal in the scope of 6.0 μm, the particle density of conducting particles is more than or equal to 5000/mm
2and be less than or equal to 50000/mm
2.In this situation, more suitably can take into account the insulating properties between the dispersiveness of conducting particles P and adjacent circuit electrode 8,8.
About the relation of the average grain diameter of conducting particles P and the thickness of conductive adhesive layer 13, the thickness of conductive adhesive layer 13 is preferably greater than or equal to 0.6 times of conducting particles P average grain diameter and be less than 1.0 times.When the thickness of conductive adhesive layer 13 is less than 0.6 times relative to the average grain diameter of conducting particles P, the particle density of conducting particles P reduces, and likely produces the bad connection between salient pole 6 and circuit electrode 8.In addition, when the thickness of conductive adhesive layer 13 is more than or equal to 1.0 times relative to the average grain diameter of conducting particles P, adjacent conducting particles P, P aggegation each other, likely produces short circuit between adjacent circuit electrode 8,8.In order to obtain better dispersiveness, the thickness of conductive adhesive layer 13 is preferably more than or equal to 0.7 times relative to the average grain diameter of conducting particles P and is less than or equal to 0.9 times.In addition, the thickness of conductive adhesive layer 13 is less than 10 μm preferably greater than or equal to 1.5 μm.In addition, more than 70% of preferred conducting particles P is the state be separated with adjacent other conducting particless P.
Meet such relation as a result, a part of conducting particles P is the state outstanding in insulating properties bond layer 14 side, and insulating properties bond layer 14 is positioned at the separate section of adjacent conducting particles P, P with the border S of conductive adhesive layer 13.In addition, conducting particles P does not have the opposing face (i.e. the face of stripping film 12 side) of insulating properties bond layer 14 in conductive adhesive layer 13 to expose, and preferred opposing face is tabular surface.The thickness being present in the conductive adhesive layer 13 between conducting particles P and conductive adhesive layer 13 surface is preferably greater than 0 μm and is less than or equal to 1 μm.
Insulating properties bond layer 14 can be confirmed by the cross-section of anisotropic conductive film 11 with the border S of conductive adhesive layer 13.Because insulating properties bond layer 14 is different with the composition of the complex in conductive adhesive layer 13, the border S of insulating properties bond layer 14 and conductive adhesive layer 13 also can be judged according to the difference of the observation image in processing, the finders such as focused ion beam (FIB), scanning electron microscope (SEM), transmission electron microscope (TEM).
When insulating properties bond layer 14 and conductive adhesive layer 13 are difficult to mix each other, border S can confirm as interface.The composition of insulating properties bond layer 14 and conductive adhesive layer 13 is similar and when lamination process median surface described later disappears, the boundary layer sometimes mixed with conductive adhesive layer 13 as insulating properties bond layer 14 and observing.
On the other hand, the thickness of insulating properties bond layer 14 can set aptly.The thickness of conductive adhesive layer 13 and insulating properties bond layer 14 adds up to such as 5 μm ~ 30 μm.In addition, the thickness of usual conductive adhesive layer 13 and insulating properties bond layer 14 add up to connection structural bodies 1 in be preferably 0 μm ~ 10 μm from the installed surface 5a of the first circuit member 2 to the difference of the distance of the installed surface 7a of second circuit component 3.Fill between circuit member 2,3 from the view point of the solidfied material 4 by anisotropic conductive film, above-mentioned difference is preferably 0.5 μm ~ 8.0 μm, is more preferably 1.0 μm ~ 5.0 μm.
Being greater than 0 μm by difference being set to, easily being filled between the first circuit member 2 and second circuit component 3 by the solidfied material 4 of anisotropic conductive film, easily suppress the connection reliability after stripping, humidity test to reduce.On the other hand, being less than or equal to 10 μm by difference being set to, when the first circuit member 2 and second circuit component 3 crimp, easily maintaining the removing property of resin, obtaining the electrical connection between salient pole 6 and circuit electrode 8.
For the position in the thickness of the insulating properties bond layer 14 with conductive adhesive layer 13 that form anisotropic conductive film 11, anisotropic conductive film 11 existing for conducting particles P, focused ion beam (FIB) such as can be used to cut the cross section of anisotropic conductive film 11, then utilize scanning electron microscope (SEM) to carry out observing and measuring.Specifically, the fixture that stripping film 12 side of anisotropic conductive film 11 is fixed on sample processing, is observed by the carbon paste band of conductivity is used.Then, implement platinum sputter process from conductive adhesive layer 13 side, conductive adhesive layer 13 is formed the platinum film of 20nm.Then, use focused ion beam (FIB) to implement processing from conductive adhesive layer 13 side of anisotropic conductive film 11, by scanning electron microscope (SEM), processing cross section is observed.
[manufacture method of connection structural bodies]
Fig. 5 is for representing the schematic section of the manufacturing process of connection structural bodies 1 shown in Fig. 1.When forming connection structural bodies 1, such as, stripping film 12 is peeled off from anisotropic conductive film 11, with mode lamination anisotropic conductive film 11 on second circuit component 3 that insulating properties bond layer 14 side is relative with installed surface 7a.Then, as shown in Figure 6, in the mode that salient pole 6 is relative with circuit electrode 8, have at lamination on the second circuit component 3 of anisotropic conductive film 11 and configure the first circuit member 2.Then, heating anisotropic conductive film 11, while pressurize at thickness direction to the first circuit member 2 and second circuit component 3.
Thus, the bonding agent product flows of anisotropic conductive film 11, under the state that the Distance Shortened of salient pole 6 and circuit electrode 8 causes conducting particles P to be engaged, conductive adhesive layer 13 and insulating properties bond layer 14 solidify.By the solidification of conductive adhesive layer 13 and insulating properties bond layer 14, salient pole 6 is electrically connected with circuit electrode 8, and at adjacent salient pole 6,6 each other and under the state that is electrically insulated from each other of adjacent circuit electrode 8,8, form the solidfied material 4 of anisotropic conductive film, obtain the connection structural bodies 1 shown in Fig. 1.In gained connection structural bodies 1, by the solidfied material 4 of anisotropic conductive film, fully can prevent salient pole 6 and the rheological parameters' change with time of the spacing of circuit electrode 8, also can guarantee the long-term reliability of electrical characteristics simultaneously.
Be explained, the heating-up temperature of anisotropic conductive film 11 be in curing agent, produce polymerization activity kind, polymerization single polymerization monomer start be polymerized temperature.This heating-up temperature is such as 80 DEG C ~ 200 DEG C, is preferably 100 DEG C ~ 180 DEG C.In addition, be such as 0.1 second ~ 30 seconds, be preferably 1 second ~ 20 seconds heating time.Being more than or equal to 80 DEG C by heating-up temperature being set to, easily obtaining curing rate, being less than or equal to 200 DEG C by being set to, easily suppress unexpected side reaction.In addition, being more than or equal to 0.1 second by being set to heating time, being easily fully cured reaction, being less than or equal to 30 seconds by being set to, while the productivity ratio maintaining solidfied material, also easily suppress unexpected side reaction further.
About the position existing for the conducting particles P formed in the solidfied material 4 of the first circuit member 2 of connection structural bodies 1, second circuit component 3 and anisotropic conductive film, can confirm in the following way: such as use epoxy resin and the amine system curing agent representated by diethylenetriamine by after connection structural bodies 1 casting mold, vertically grind with the installed surface 7a of connection structural bodies 1, thus make the cross section of syndeton, then, scanning electron microscope (SEM) is used to observe.
[manufacture method of anisotropic conductive film]
Conductive adhesive layer 13 can be made by such as film painting process and its follow-up magnetic field applying step.In these operations, the bonding agent muddle being dispersed with conducting particles P is distributed in mold release film, before paste drying, applies magnetic field at the thickness direction of mold release film.By the applying in magnetic field, the conducting particles P adjoined is disperseed, thus obtain conductive adhesive layer 13.The applying in magnetic field is carried out in order to the dispersiveness improving conducting particles P, not necessarily must implement.
After forming conductive adhesive layer 13, as shown in Figure 7, lamination conductive adhesive layer 13 on the insulating properties bond layer 14 made separately.Thus, the anisotropic conductive film 11 shown in Fig. 4 is obtained.Be explained, the lamination of conductive adhesive layer 13 can use such as hot roll laminator.In addition, be not limited to lamination, also the bonding agent muddle becoming the material of conductive adhesive layer 13 can be distributed on insulating properties bond layer 14 and carry out drying.Thereby, it is possible to make conducting particles P segregation in the one side side of anisotropic conductive film 11.
In addition, also the fixing resin containing conducting particles P can be coated after on stripping film, make stripping film Directional Extension and conducting particles P is separated in face.In the method, with the mode filled conductive particle P of individual layer in fixing resin, cause the aggegation of fixing resin, while extend, obtain cohesive force and extend equilibrium of forces, thus conducting particles P can be linked by fixing resin.When using cross-linked polymer as fixing resin, preferably after uncrosslinked state downward-extension, use heat, light is cross-linked.As the method conducting particles linked by fixing resin P imbedded in insulating properties bonding agent, can enumerate and be formed on the insulating properties bonding agent on the base material that can peel off, the stacking conducting particles P linked by fixing resin, use hot-rolling, laminating machine imbed the method in insulating properties bonding agent.The method is documented in such as International Publication publication WO2005/054388.Conducting particles P segregation so also can be made in the one side side of anisotropic conductive film 11.
The formation of the dispersity of conducting particles P is not limited to said method.Also can pass through such as ink-jetting style, the ink containing conducting particles P be spued to insulating properties bonding agent from the nozzle that spues, conducting particles P is scattered in insulating properties bonding agent equably, thus make conductive adhesive layer 13.Conducting particles P segregation so also can be made in the one side side of anisotropic conductive film 11.
[action effect]
In the manufacture method of this connection structural bodies, use conducting particles P segregation in the anisotropic conductive film 11 of one side side, configure in the mode facing to the first circuit member 2 side of conducting particles P institute segregation, by the first circuit member 2 and second circuit component 3 thermo-compressed.When using anisotropic conductive film 11 to be connected with circuit electrode 8 by salient pole 6, such as shown in Figure 8, salient pole 6 departs from relative to circuit electrode 8 direction occurrence positions in the face of installed surface 5a, 7a sometimes.When salient pole 6 and circuit electrode 8 produce position deviation, as shown in Figure 8, the distance A between circuit electrode 8 and other salient poles 6 adjacent with the salient pole 6 that should be connected, is less than the spacing of salient pole 6.Therefore can think, if conducting particles P segregation is in second circuit component 3 side, then owing to originally not having helpful conducting particles P to electrical connection, circuit electrode 8 and other salient poles 6 adjacent with the salient pole 6 that should be connected are electrically connected, and cause short circuit.
Relative to this, in the connection structural bodies 1 obtained by the manufacture method of this connection structural bodies, such as shown in Figure 9, helpful conducting particles P is not had to the electrical connection of salient pole 6 and circuit electrode 8, to be in compared with circuit electrode 8 between thicker adjacent salient pole 6,6 segregation in the state of the first circuit member 2 side.And, in gained connection structural bodies 1, in the solidfied material 4 of anisotropic conductive film, more than 80% of the conducting particles P of the middle section between adjacent salient pole 6,6 is present in the position near the first circuit member 2 side compared with the position L of the thickness half of salient pole 6.Therefore, even if salient pole 6 creates position deviation relative to circuit electrode 8, circuit electrode 8 and other adjacent salient poles 6 also can be prevented to be electrically connected by conducting particles P, the short circuit of circuit can be suppressed.
Embodiment
Below, embodiment of the present utility model and comparative example are described.
(synthesis of phenoxy resin a)
Be provided with in spiral coil cooling tube, calcium chloride tube and the there-necked flask of the 3000mL of teflon stirring rod that is connected with stirring motor, by 4,4 '-(9-fluorenylidene)-biphenol 45g (Sigma-AldrichJapan Co., Ltd. system) and 3,3 ', 5,5 '-tetramethyl biphenyl diphenol diglycidyl ether 50g (Mitsubishi chemical Co., Ltd's system: YX-4000H) is dissolved in 1-METHYLPYRROLIDONE 1000mL, makes reactant liquor.Add potash 21g wherein, utilize mantle heater (mantleheater) to be heated to 110 DEG C, while stir.Stirring after 3 hours, reactant liquor is dropped to the beaker that 1000mL methyl alcohol is housed, carrying out the sediment of leaching generation by carrying out suction strainer.And then utilize the methyl alcohol of 300mL by the sediment undergoes washing three times of leaching, obtain 75g phenoxy resin a.
Then, TOSOH Co., Ltd high speed liquid chromatograph GP8020 is used to measure the molecular weight (condition determination is as previously mentioned) of phenoxy resin a.Consequently, with polystyrene conversion, be Mn=15769, Mw=38045, Mw/Mn=2.413.
(making of anisotropic conductive film A)
When the bonding agent forming conductive adhesive layer is stuck with paste, coordinate the bisphenol A type epoxy resin (Mitsubishi chemical Co., Ltd's system: jER828) using solid component meter 50 mass parts as epoxy compounds, 4-hydroxyphenylmethyl benzyl sulfonium hexafluoro antimonate using solid component meter 5 mass parts as curing agent respectively, using solid component meter 50 mass parts as the phenoxy resin a of film formation material.In addition, as conducting particles, taking polystyrene as the nickel dam of particle surface thickness setting 0.2 μm of core, making the conducting particles of average grain diameter 3.3 μm, proportion 2.5, this conducting particles of 50 mass parts is matched with in above-mentioned complex.Then, use coating machine that this bonding agent muddle is distributed in the PET film of thickness 50 μm, carry out drying, thus obtain the conductive adhesive layer that thickness is 8.0 μm.
Then, when the bonding agent forming insulating properties bond layer is stuck with paste, coordinate the bisphenol f type epoxy resin (Mitsubishi chemical Co., Ltd's system: jER807) using solid component meter 45 mass parts as epoxy compounds, 4-hydroxyphenylmethyl benzyl sulfonium hexafluoro antimonate using solid component meter 5 mass parts as curing agent respectively, using solid component meter 55 mass parts as the bisphenol-A of film formation material-Bisphenol F copoly type phenoxy resin (Nippon Steel & Sumitomo Metal Corporation's system: YP-70).Then, use coating machine that this bonding agent muddle is distributed in the PET film of thickness 50 μm, carry out drying, thus obtain the insulating properties bond layer that thickness is 12 μm.Then, conductive adhesive layer and insulating properties bond layer be heated to 40 DEG C and use hot roll laminator to fit, obtaining anisotropic conductive film A.
(making of anisotropic conductive film B)
When the bonding agent forming conductive adhesive layer is stuck with paste, coordinate the bisphenol A type epoxy resin (Mitsubishi chemical Co., Ltd's system: jER828) using solid component meter 50 mass parts as epoxy compounds, 4-hydroxyphenylmethyl benzyl sulfonium hexafluoro antimonate using solid component meter 5 mass parts as curing agent respectively, using solid component meter 50 mass parts as the phenoxy resin a of film formation material.In addition, as conducting particles, taking polystyrene as the nickel dam of particle surface thickness setting 0.2 μm of core, making the conducting particles of average grain diameter 3.3 μm, proportion 2.5, this conducting particles of 80 mass parts is matched with in above-mentioned complex.Then, use coating machine that this bonding agent muddle is distributed in the PET film of thickness 50 μm, carry out drying, thus obtain the conductive adhesive layer that thickness is 2.6 μm.
Then, when the bonding agent forming insulating properties bond layer is stuck with paste, coordinate the bisphenol f type epoxy resin (Mitsubishi chemical Co., Ltd's system: jER807) using solid component meter 45 mass parts as epoxy compounds, 4-hydroxyphenylmethyl benzyl sulfonium hexafluoro antimonate using solid component meter 5 mass parts as curing agent respectively, using solid component meter 55 mass parts as the bisphenol-A of film formation material-Bisphenol F copoly type phenoxy resin (Nippon Steel & Sumitomo Metal Corporation's system: YP-70).Then, use coating machine that this bonding agent muddle is distributed in the PET film of thickness 50 μm, carry out drying, thus obtain the insulating properties bond layer that thickness is 17 μm.Then, conductive adhesive layer and insulating properties bond layer be heated to 40 DEG C and use hot roll laminator to fit, obtaining anisotropic conductive film B.
(making of anisotropic conductive film C)
When the bonding agent forming conductive adhesive layer is stuck with paste, coordinate the bisphenol A type epoxy resin (Mitsubishi chemical Co., Ltd's system: jER828) using solid component meter 50 mass parts as epoxy compounds, 4-hydroxyphenylmethyl benzyl sulfonium hexafluoro antimonate using solid component meter 5 mass parts as curing agent respectively, using solid component meter 50 mass parts as the phenoxy resin a of film formation material.In addition, as conducting particles, taking polystyrene as the nickel dam of particle surface thickness setting 0.2 μm of core, making the conducting particles of average grain diameter 3.3 μm, proportion 2.5, this conducting particles of 80 mass parts is matched with in above-mentioned complex.Then, use coating machine that this bonding agent muddle is distributed in the PET film of thickness 50 μm, carry out drying and magnetic field applying, thus obtain the conductive adhesive layer that thickness is 2.6 μm.
Then, when the bonding agent forming insulating properties bond layer is stuck with paste, coordinate the bisphenol f type epoxy resin (Mitsubishi chemical Co., Ltd's system: jER807) using solid component meter 45 mass parts as epoxy compounds, 4-hydroxyphenylmethyl benzyl sulfonium hexafluoro antimonate using solid component meter 5 mass parts as curing agent respectively, using solid component meter 55 mass parts as the bisphenol-A of film formation material-Bisphenol F copoly type phenoxy resin (Nippon Steel & Sumitomo Metal Corporation's system: YP-70).Then, use coating machine that this bonding agent muddle is distributed in the PET film of thickness 50 μm, carry out drying, thus obtain the insulating properties bond layer that thickness is 17 μm.Then, conductive adhesive layer and insulating properties bond layer be heated to 40 DEG C and use hot roll laminator to fit, obtaining anisotropic conductive film C.
(the conducting particles density calculation in anisotropic conductive film)
For anisotropic conductive film A ~ C, at 20 places to every 2500 μm
2conductive particle subnumber survey, its mean value is scaled 1mm
2.Consequently, the density of the conducting particles in anisotropic conductive film A is 50000/mm
2.On the other hand, the density of the conducting particles in anisotropic conductive film B and C is 26000/mm
2.
(evaluation of the single dispersing rate of conducting particles)
For anisotropic conductive film A ~ C, evaluate the single dispersing rate (ratio that conducting particles exists with the state (monodisperse status) be separated with other adjacent conducting particless) of conducting particles.Single dispersing rate use single dispersing rate (%)=(2500 μm
2in conductive particle subnumber/2500 μm of monodisperse status
2in conductive particle subnumber) × 100 to obtain.Metallurgical microscopes is used in the actual measurement of conducting particles.Consequently, about anisotropic conductive film A, be difficult to the conducting particles differentiating conducting particles and the aggegation existed with monodisperse status, single dispersing rate cannot be evaluated.In addition, the single dispersing rate of anisotropic conductive film B terminates in 36%, and the single dispersing rate of anisotropic conductive film C is 87%.
(embodiment 1)
As the first circuit member, prepare the IC chip (size 100 μm × 28 μm of profile 2mm × 20mm, thickness 0.3mm, salient pole, salient pole spacing 10 μm, salient pole thickness 15 μm) being arranged with salient pole.In addition, as second circuit component, prepare the component of the Wiring pattern (pattern width 31 μm, electrode spacing 7 μm) being formed with ITO on the surface of glass substrate (Corning Inc.: #1737,38mm × 28mm, thickness 0.3mm).
Connection for IC chip and glass substrate uses the thermo-compression bonding device be made up of the platform comprising ceramic heater (150mm × 150mm) and instrument (3mm × 20mm).Then, stripping film is peeled off, at 80 DEG C, 0.98MPa (10kgf/cm from anisotropic conductive film B (2.5mm × 25mm)
2) condition under carry out heating and the pressurization in 2 seconds, the face of insulating properties bond layer side is attached at glass substrate.
Then, after contraposition is carried out to the salient pole of IC chip and the circuit electrode of glass substrate, be up to the condition of the area reduced pressure 70MPa on Da Wendu 170 DEG C and salient pole in the actual measurement of anisotropic conductive film B under, carry out heating and the pressurization in 5 seconds, the face of conductive adhesive layer side is attached at IC chip, obtains the connection structural bodies (with reference to Figure 10) involved by embodiment 1.The sample number of connection structural bodies is total up to 10 kinds, in each sample, make the circuit electrode of glass substrate side and distance (being equivalent to the distance A shown in Fig. 8 and Fig. 9) between the salient pole adjoined with the salient pole of the IC chip that should be connected in the scope of 3.0 μm ~ 8.5 μm with the changes in amplitude of 0.5 μm.
(embodiment 2)
Except using anisotropic conductive film C, operate similarly to Example 1, obtain the connection structural bodies involved by embodiment 2.
(comparative example 1)
As the first circuit member, prepare the IC chip (size 100 μm × 28 μm of profile 2mm × 20mm, thickness 0.3mm, salient pole, salient pole spacing 10 μm, salient pole thickness 15 μm) being arranged with salient pole.In addition, as second circuit component, prepare the component of the Wiring pattern (pattern width 31 μm, electrode spacing 7 μm) being formed with ITO on the surface of glass substrate (Corning Inc.: #1737,38mm × 28mm, thickness 0.3mm).
For the connection of IC chip and glass substrate, use the thermo-compression bonding device be made up of the platform comprising ceramic heater (150mm × 150mm) and instrument (3mm × 20mm).Then, stripping film is peeled off, at 80 DEG C, 0.98MPa (10kgf/cm from anisotropic conductive film B (2.5mm × 25mm)
2) condition under carry out heating and the pressurization in 2 seconds, the face of conductive adhesive layer side is attached at glass substrate.
Then, after contraposition is carried out to the salient pole of IC chip and the circuit electrode of glass substrate, be up to the condition of the area reduced pressure 70MPa on Da Wendu 170 DEG C and salient pole in the actual measurement of anisotropic conductive film B under, carry out heating and the pressurization in 5 seconds, the face of insulating properties bond layer side is attached at IC chip, obtains the connection structural bodies (with reference to Figure 11) involved by comparative example 1.The sample number of connection structural bodies, in the same manner as embodiment, is total up to 10 kinds, in each sample, the distance between the salient pole making the circuit electrode of glass substrate side and adjacent IC chip in the scope of 3.0 μm ~ 8.5 μm with the changes in amplitude of 0.5 μm.
(comparative example 2)
Except using anisotropic conductive film C, operate in the same manner as comparative example 1, obtain the connection structural bodies involved by comparative example 2.
(comparative example 3)
Except using anisotropic conductive film A, operate in the same manner as comparative example 1, obtain the connection structural bodies involved by comparative example 3.
(comparative example 4)
Except using anisotropic conductive film A, operate similarly to Example 1, obtain the connection structural bodies (with reference to Figure 12) involved by comparative example 4.
(evaluation of the resistance characteristic of connection structural bodies)
In the connection structural bodies of embodiment 1,2 and comparative example 1 ~ 4, evaluate the contact resistance between salient pole and circuit electrode and the insulation resistance between circuit electrode and adjacent salient pole respectively.The evaluation of contact resistance utilizes four terminals measurement methods to implement by universal instrument (ETAC Inc.: MLR21).In addition, in the evaluation of insulation resistance, the connection structural bodies of embodiment 1,2 and comparative example 1 ~ 4 is applied to voltage 30 second of 50V, measure the insulation resistance altogether between 100 place's salient pole-circuit electrodes in the lump.About insulation resistance, measure three samples in each amplitude of the distance between the salient pole of the circuit electrode in glass substrate side and adjacent IC chip, the insulation resistance of three samples is all greater than 1.0 × 10
9the situation of Ω is set to A judgement, the insulation resistance of more than one sample is less than 1.0 × 10
9the situation of Ω is set to B judgement, the insulation resistance of three samples is all less than 1.0 × 10
9the situation of Ω is set to C and judges.
(evaluation of the conductive particle subnumber between the electrode being present in connection structural bodies)
About the connection structural bodies of embodiment 1,2 and comparative example 1 ~ 4, observed by the cross section of metallurgical microscopes to connection structural bodies, from the conducting particles be present between IC chip electrode, select arbitrary 50, calculate in from the surface of IC chip to 200% (6.6 μm) scope below of conducting particles average grain diameter the ratio of the conducting particles existed.
Table 1 is the table representing evaluation test result.As the table shows, about the contact resistance between salient pole and circuit electrode, embodiment 1,2 and comparative example 1 ~ 4 any one in all obtain the good value being less than or equal to 0.5 Ω.About the insulation resistance between circuit electrode and adjacent salient pole, in embodiment 1, even if when making the distance of circuit electrode and adjacent salient pole approach to 4.0 μm due to position deviation, also good insulation resistance is maintained, in example 2, even if when making the distance of circuit electrode and adjacent salient pole approach to 3.5 μm due to position deviation, also maintain good insulation resistance.In addition, in embodiment 1,2, be present in 96% in the conducting particles of the middle section between IC chip electrode be present in from IC chip surface to conducting particles average grain diameter 200% within scope in.
Relative to this, in comparative example 1, when making the distance of circuit electrode and adjacent salient pole approach to 5.0 μm due to position deviation, insulation resistance deterioration, in comparative example 2, when making the distance of circuit electrode and adjacent salient pole approach to 6.0 μm due to position deviation, insulation resistance deterioration.On the other hand, in comparative example 3,4, no matter the position of conducting particles institute segregation is glass substrate side or IC chip side, all insulation resistance deteriorations when the distance of circuit electrode and adjacent salient pole approaches to 4.5 μm.In addition, in comparative example 1 ~ 3, be present in the conducting particles between IC chip electrode, be not present in the scope within 200% from IC chip surface to conducting particles average grain diameter, in comparative example 4, be present in scope that 64% in the conducting particles between IC chip electrode be present within from the surface of IC chip to 200% of conducting particles average grain diameter.By above results verification, as the utility model, make conducting particles segregation in the first circuit member side, make conducting particles be positioned at from the installed surface of the first circuit member to conducting particles average grain diameter less than 200% scope, be effective to the short circuit preventing the position deviation of electrode from causing.
[table 1]
Claims (1)
1. a connection structural bodies, it is characterized in that, it is the connection structural bodies be formed by connecting with the second circuit component being arranged with the second electrode that thickness is little compared with described first electrode by the first circuit member being arranged with the first electrode by the solidfied material of the anisotropic conductive film containing conducting particles
In the solidfied material of described anisotropic conductive film, more than 90% of the described conducting particles of the middle section between described first electrode be arranged in from the installed surface of described first circuit member to described conducting particles average grain diameter less than 200% scope and be equivalent to the arbitrary larger scope of scope of half of described first thickness of electrode.
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| JP2014148549A JP6398416B2 (en) | 2014-07-22 | 2014-07-22 | Connection structure manufacturing method and connection structure |
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| JP2638197B2 (en) * | 1989-05-11 | 1997-08-06 | 富士通株式会社 | Connection structure between electrode terminal rows |
| JP2762813B2 (en) * | 1992-01-30 | 1998-06-04 | 日立化成工業株式会社 | Connection method of semiconductor chip |
| JPH05290946A (en) * | 1992-04-03 | 1993-11-05 | Hitachi Ltd | Packaging method for electronic parts |
| WO1998038701A1 (en) * | 1997-02-27 | 1998-09-03 | Seiko Epson Corporation | Connecting structure, liquid crystal device, electronic equipment, anisotropic conductive adhesive, and method for manufacturing the adhesive |
| JP3491595B2 (en) * | 2000-02-25 | 2004-01-26 | ソニーケミカル株式会社 | Anisotropic conductive adhesive film |
| JP3903709B2 (en) * | 2000-09-29 | 2007-04-11 | セイコーエプソン株式会社 | Connector, inkjet head, inkjet printer, display device, electronic device, and connector manufacturing method |
| US20130000964A1 (en) * | 2010-04-22 | 2013-01-03 | Hiroshi Kobayashi | Anisotropic conductive material and connection structure |
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