CN204792904U - 发光二极管芯片及发光装置 - Google Patents
发光二极管芯片及发光装置 Download PDFInfo
- Publication number
- CN204792904U CN204792904U CN201520378962.0U CN201520378962U CN204792904U CN 204792904 U CN204792904 U CN 204792904U CN 201520378962 U CN201520378962 U CN 201520378962U CN 204792904 U CN204792904 U CN 204792904U
- Authority
- CN
- China
- Prior art keywords
- light
- backlight unit
- peristome
- emitting diode
- diode chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims description 99
- 230000004888 barrier function Effects 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 41
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 238000004020 luminiscence type Methods 0.000 abstract description 4
- 230000001681 protective effect Effects 0.000 abstract description 3
- 230000000994 depressogenic effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 88
- 238000000034 method Methods 0.000 description 21
- 239000000463 material Substances 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000004446 light reflex Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020140098258A KR20160015685A (ko) | 2014-07-31 | 2014-07-31 | 보호 소자를 포함하는 발광 다이오드 칩 및 이를 포함하는 발광 장치 |
| KR10-2014-0098258 | 2014-07-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204792904U true CN204792904U (zh) | 2015-11-18 |
Family
ID=54532897
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520378962.0U Active CN204792904U (zh) | 2014-07-31 | 2015-06-03 | 发光二极管芯片及发光装置 |
| CN201510300867.3A Active CN105322082B (zh) | 2014-07-31 | 2015-06-03 | 发光二极管芯片及发光装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510300867.3A Active CN105322082B (zh) | 2014-07-31 | 2015-06-03 | 发光二极管芯片及发光装置 |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20160015685A (ko) |
| CN (2) | CN204792904U (ko) |
| TW (2) | TWI570881B (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105322082A (zh) * | 2014-07-31 | 2016-02-10 | 首尔伟傲世有限公司 | 发光二极管芯片及发光装置 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9728698B2 (en) | 2014-06-03 | 2017-08-08 | Seoul Viosys Co., Ltd. | Light emitting device package having improved heat dissipation efficiency |
| US9577171B2 (en) | 2014-06-03 | 2017-02-21 | Seoul Viosys Co., Ltd. | Light emitting device package having improved heat dissipation efficiency |
| TWI608633B (zh) * | 2015-12-15 | 2017-12-11 | 李乃義 | 發光二極體裝置及其製造方法 |
| CN110164857B (zh) * | 2018-02-14 | 2024-04-09 | 晶元光电股份有限公司 | 发光装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7173311B2 (en) * | 2004-02-02 | 2007-02-06 | Sanken Electric Co., Ltd. | Light-emitting semiconductor device with a built-in overvoltage protector |
| CN102130287A (zh) * | 2010-12-22 | 2011-07-20 | 晶科电子（广州）有限公司 | 具有静电损伤保护功能的发光二极管器件及其制造方法 |
| DE102011011378A1 (de) * | 2011-02-16 | 2012-08-16 | Osram Opto Semiconductors Gmbh | Trägersubstrat und Verfahren zur Herstellung von Halbleiterchips |
| JP5772213B2 (ja) * | 2011-05-20 | 2015-09-02 | サンケン電気株式会社 | 発光素子 |
| DE102011084363B4 (de) * | 2011-10-12 | 2022-12-22 | Pictiva Displays International Limited | Organische Leuchtdiode |
| JP5869961B2 (ja) * | 2012-05-28 | 2016-02-24 | 株式会社東芝 | 半導体発光装置 |
| DE112013004996T5 (de) * | 2012-10-15 | 2015-07-09 | Seoul Viosys Co., Ltd. | Halbleitervorrichtung und Verfahren zu deren Herstellung |
| US9484510B2 (en) * | 2012-10-30 | 2016-11-01 | Seoul Semiconductor Co., Ltd. | Lens and light emitting module for surface illumination |
| TWM461000U (zh) * | 2013-04-26 | 2013-09-01 | Genesis Photonics Inc | 照明裝置 |
| KR20160015685A (ko) * | 2014-07-31 | 2016-02-15 | 서울바이오시스 주식회사 | 보호 소자를 포함하는 발광 다이오드 칩 및 이를 포함하는 발광 장치 |
-
2014
- 2014-07-31 KR KR1020140098258A patent/KR20160015685A/ko not_active Application Discontinuation
-
2015
- 2015-06-03 CN CN201520378962.0U patent/CN204792904U/zh active Active
- 2015-06-03 TW TW104117884A patent/TWI570881B/zh not_active IP Right Cessation
- 2015-06-03 TW TW104208770U patent/TWM511125U/zh not_active IP Right Cessation
- 2015-06-03 CN CN201510300867.3A patent/CN105322082B/zh active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105322082A (zh) * | 2014-07-31 | 2016-02-10 | 首尔伟傲世有限公司 | 发光二极管芯片及发光装置 |
| CN105322082B (zh) * | 2014-07-31 | 2019-04-09 | 首尔伟傲世有限公司 | 发光二极管芯片及发光装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105322082A (zh) | 2016-02-10 |
| TWI570881B (zh) | 2017-02-11 |
| TW201605016A (zh) | 2016-02-01 |
| KR20160015685A (ko) | 2016-02-15 |
| CN105322082B (zh) | 2019-04-09 |
| TWM511125U (zh) | 2015-10-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |