CN204707024U - 一种小功率智能模块 - Google Patents

一种小功率智能模块 Download PDF

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CN204707024U
CN204707024U CN201520322759.1U CN201520322759U CN204707024U CN 204707024 U CN204707024 U CN 204707024U CN 201520322759 U CN201520322759 U CN 201520322759U CN 204707024 U CN204707024 U CN 204707024U
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driving chip
effect transistor
field effect
thermistor
small
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罗艳玲
陶少勇
农一清
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JILIN HUAWEI SIPAKE ELECTRIC Co Ltd
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JILIN HUAWEI SIPAKE ELECTRIC Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

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Abstract

一种小功率智能模块，涉及集成电路技术领域，其结构包括引线框架、固定于所述引线框架上的预设有目标电压值的驱动芯片、场效应管和热敏电阻，所述热敏电阻与所述驱动芯片的输入端电连接，所述驱动芯片的输出端与所述场效应管电连接，通过设置热敏电阻，热敏电阻可感应小功率智能模块的实时温度，将实时温度转化为实时电压信号传至驱动芯片，实时电压值和目标电压值的差值在某个允许的电压范围内则驱动芯片驱动场效应管工作，实时电压值和目标电压值的差值在该允许的电压范围外则驱动芯片驱动场效应管不工作，从而可在温度超出产品工作承受范围，就使得小功率智能模块自动停止工作，避免因过度发热而带来的一系列未知安全隐患。

Description

一种小功率智能模块
技术领域
本实用新型涉及集成电路技术领域，特别是涉及一种小功率智能模块。
背景技术
功率模块是功率电力电子器件按一定的功能组合后灌封的一个模块。
智能功率模块是以IGBT芯片为内核的先进混合集成功率部件，由高速低功耗管芯（IGBT）和优化的门极驱动电路，以及快速保护电路构成。
智能功率模块的IGBT芯片一般发热比较厉害，以致整个智能功率模块的发热比较厉害，但现有技术的智能功率模块一般缺乏对过度发热的处理，过度发热将导致电路不能正常工作，还会使得电路有安全隐患。
实用新型内容
本实用新型的目的在于避免现有技术中的不足之处而提供一种小功率智能模块，该小功率智能模块的功率比较小，可避免因芯片过度发热而带来的安全隐患。
本实用新型的目的通过以下技术方案实现：
提供一种小功率智能模块，包括引线框架、固定于所述引线框架上的预设有目标电压值的驱动芯片、场效应管和热敏电阻，所述热敏电阻与所述驱动芯片的输入端电连接，所述驱动芯片的输出端与所述场效应管电连接。
一个所述驱动芯片驱动两个所述场效应管工作。
一个热敏电阻与一个驱动芯片连接。
所述驱动芯片设置有三个，所述场效应管设置有六个，所述热敏电阻设置有三个。
所述驱动芯片设置有窗口比较器。
本实用新型的有益效果：
本实用新型包括引线框架、固定于所述引线框架上的预设有目标电压值的驱动芯片、场效应管和热敏电阻，所述热敏电阻与所述驱动芯片的输入端电连接，所述驱动芯片的输出端与所述场效应管电连接。
（1）本实用新型的一种小功率智能模块通过设置热敏电阻，热敏电阻可感应小功率智能模块的实时温度，将实时温度转化为实时电压信号传至驱动芯片，实时电压值和目标电压值的差值在某个允许的电压范围内则驱动芯片驱动场效应管工作，实时电压值和目标电压值的差值在该允许的电压范围外则驱动芯片驱动场效应管不工作，从而可在温度超出产品工作承受范围，就使得小功率智能模块自动停止工作，避免因过度发热而带来的安全隐患。
（2）本实用新型使用场效应管，与使用IGBT芯片相比比较节能，避免了使用过程中不必要的能源损耗，减少热量的产生，从源头上减少小功率智能模块的发热。
附图说明
利用附图对实用新型作进一步说明，但附图中的实施例不构成对本实用新型的任何限制，对于本领域的普通技术人员，在不付出创造性劳动的前提下，还可以根据以下附图获得其它的附图。
图1是本实用新型的一种小功率智能模块的整体结构示意图。
图中包括有：
1——引线框架；
2——驱动芯片；
3——场效应管；
4——热敏电阻。
具体实施方式
结合以下实施例对本实用新型作进一步描述。
本实施例的一种小功率智能模块，如图1所示，包括引线框架1、固定于所述引线框架1上的预设有目标电压值的驱动芯片2、场效应管3和热敏电阻4，所述热敏电阻4与所述驱动芯片2的输入端电连接，所述驱动芯片2的输出端与所述场效应管3电连接。
本实施例的一种小功率智能模块通过设置热敏电阻4，热敏电阻4可感应小功率智能模块的实时温度，将实时温度转化为实时电压信号传至驱动芯片2，实时电压值和目标电压值的差值在某个允许的电压范围内则驱动芯片2驱动场效应管3工作，实时电压值和目标电压值的差值在该允许的电压范围外则驱动芯片2驱动场效应管3不工作，从而可在温度超出产品工作承受范围，就使得小功率智能模块自动停止工作，避免因过度发热而带来的安全隐患。本实施例使用场效应管3，与使用IGBT芯片相比比较节能，避免了使用过程中不必要的能源损耗，减少热量的产生，从源头上减少小功率智能模块的发热。
具体的，通过驱动芯片2内设置的窗口比较器来判断实时电压值和目标电压值的差值与该允许的电压范围的大小关系，进而窗口比较器发出驱动信号，比如，窗口比较器判断实时电压值和目标电压值的差值在该允许的电压范围内，则比较器输出高电平，从而驱动场效应管3工作，窗口比较器判断实时电压值和目标电压值的差值在外允许的电压范围外，则窗口比较器输出低电平，从而不驱动场效应管3工作，使得小功率智能模块自动停止工作。
其中，一个所述驱动芯片2驱动两个所述场效应管3工作，效率更高。
一个热敏电阻与一个驱动芯片连接。
其中，所述驱动芯片2设置有三个，所述场效应管3设置有六个，所述热敏电阻设置有三个。本实施例为三个驱动芯片2驱动六个场效应管3工作，效率更高，成本更低，三个热敏电阻检测温度更加准确。
最后应当说明的是，以上实施例仅用以说明本实用新型的技术方案，而非对本实用新型保护范围的限制，尽管参照较佳实施例对本实用新型作了详细地说明，本领域的普通技术人员应当理解，可以对本实用新型的技术方案进行修改或者等同替换，而不脱离本实用新型技术方案的实质和范围。

Claims (5)

1.一种小功率智能模块，其特征在于：包括引线框架、固定于所述引线框架上的预设有目标电压值的驱动芯片、场效应管和热敏电阻，所述热敏电阻与所述驱动芯片的输入端电连接，所述驱动芯片的输出端与所述场效应管电连接。
2.如权利要求1所述的一种小功率智能模块，其特征在于：一个所述驱动芯片驱动两个所述场效应管工作。
3.如权利要求2所述的一种小功率智能模块，其特征在于：一个热敏电阻与一个驱动芯片连接。
4.如权利要求3所述的一种小功率智能模块，其特征在于：所述驱动芯片设置有三个，所述场效应管设置有六个，所述热敏电阻设置有三个。
5.如权利要求1所述的一种小功率智能模块，其特征在于：所述驱动芯片设置有窗口比较器。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108181950A (zh) * 2017-12-25 2018-06-19 河南英富迪光电科技有限公司 高频帧非制冷红外成像探测器的温度控制装置
CN117673061A (zh) * 2023-11-30 2024-03-08 海信家电集团股份有限公司 智能功率模块和电子设备

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108181950A (zh) * 2017-12-25 2018-06-19 河南英富迪光电科技有限公司 高频帧非制冷红外成像探测器的温度控制装置
CN117673061A (zh) * 2023-11-30 2024-03-08 海信家电集团股份有限公司 智能功率模块和电子设备
CN117673061B (zh) * 2023-11-30 2024-05-17 海信家电集团股份有限公司 智能功率模块和电子设备

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