CN204668310U - High pressure super-junction MOSFET device terminal structure - Google Patents
High pressure super-junction MOSFET device terminal structure Download PDFInfo
- Publication number
- CN204668310U CN204668310U CN201520332644.0U CN201520332644U CN204668310U CN 204668310 U CN204668310 U CN 204668310U CN 201520332644 U CN201520332644 U CN 201520332644U CN 204668310 U CN204668310 U CN 204668310U
- Authority
- CN
- China
- Prior art keywords
- epitaxy layer
- region
- type epitaxy
- post
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000407 epitaxy Methods 0.000 claims abstract description 74
- 230000001413 cellular effect Effects 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 22
- 230000007704 transition Effects 0.000 claims abstract description 17
- 210000005056 cell body Anatomy 0.000 description 19
- 238000000034 method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Abstract
The utility model relates to a kind of high pressure super-junction MOSFET device terminal structure, comprise cellular region and termination environment, it is characterized in that: described termination environment comprises N-type heavy doping substrate and is arranged at the N-type epitaxy layer of N-type heavy doping substrate top surface, and N-type epitaxy layer arranges wide shape SiO
2post district, wide shape SiO
2post district prolongs the lower surface of gentry to N-type epitaxy layer by the upper surface of N-type epitaxy layer.Between described cellular region and termination environment, there is transition region, described transition region comprises N-type heavy doping substrate, N-type epitaxy layer and is formed at two narrow shape P post region in this N-type epitaxy layer, narrow shape P post region is extended towards lower surface by the upper surface of N-type epitaxy layer, and there is preset pitch between the lower end of narrow shape P post region and the lower surface of N-type epitaxy layer.Described cellular region comprises N-type heavy doping substrate, N-type epitaxy layer and the narrow shape P post region that is formed in described N-type epitaxy layer and N
-tagma.The utility model substantially reduces the area of terminal while reaching existing terminal voltage endurance capability.
Description
Technical field
The utility model relates to a kind of high pressure super-junction MOSFET device terminal structure, belongs to semiconductor power device technology field.
Background technology
Super-junction MOSFET device is a kind of important power device occurred in recent years, and its general principle is the flat reason of charge balance, and the basic super-junction structure of super-junction MOSFET device adopts the P post and N post that are alternately arranged.
The major issue that super-junction MOSFET device design will be considered is the design of junction termination structures, and good knot terminal effectively can improve device withstand voltage, reduces electric leakage and improve device reliability.The terminal structure of current most widely used super-junction structure adopts the super-junction structure identical with cellular part, namely consists of the groove structure that many groups are identical.Specifically as shown in Figure 1, comprise N-type heavy doping substrate 100, N-type heavy doping substrate 100 has N-type epitaxy layer 101, there is in N-type epitaxy layer 101 cellular region 102 and termination environment 103, there is in the N-type epitaxy layer 101 of cellular region 102 P post region 104 and N-type tagma 105, there is in the N-type epitaxy layer 101 of termination environment 103 the equally distributed P post region 104 of many group same widths; There is a determining deviation between described P post region 104 and the lower surface of N-type epitaxy layer 101, when the thickness as N-type epitaxy layer 101 is 50 μm, the height of P post region 104 is generally 35 ~ 45 μm.P post region 104 width of the high pressure super-junction MOSFET device of existing this kind of structure is narrower, be generally about 5 μm, in order to obtain the withstand voltage of sufficiently high terminal area, termination environment 103 must take very large area, be the high pressure super-junction MOSFET device of 600V as withstand voltage, its terminal width is at least greater than 130 μm.
Summary of the invention
The purpose of this utility model overcomes the deficiencies in the prior art, provides a kind of high pressure super-junction MOSFET device terminal structure, substantially reduce the area of terminal while reaching existing terminal voltage endurance capability.
According to the technical scheme that the utility model provides, described high pressure super-junction MOSFET device terminal structure, comprise cellular region and termination environment, it is characterized in that: described termination environment comprises N-type heavy doping substrate and is arranged at the N-type epitaxy layer of N-type heavy doping substrate top surface, and N-type epitaxy layer arranges wide shape SiO
2post district, wide shape SiO
2post district prolongs the lower surface of gentry to N-type epitaxy layer by the upper surface of N-type epitaxy layer.
In an embodiment, between described cellular region and termination environment, there is transition region, described transition region comprises N-type heavy doping substrate, N-type epitaxy layer and is formed at two narrow shape P post region in this N-type epitaxy layer, narrow shape P post region is extended towards lower surface by the upper surface of N-type epitaxy layer, and there is preset pitch between the lower end of narrow shape P post region and the lower surface of N-type epitaxy layer.
In an embodiment, described cellular region comprises N-type heavy doping substrate, N-type epitaxy layer and the narrow shape P post region that is formed in described N-type epitaxy layer and N
-tagma, N
-tagma is formed at the top of narrow shape P post region; The narrow shape P post region of described cellular region is extended towards lower surface by the upper surface of N-type epitaxy layer, and there is preset pitch between the lower end of narrow shape P post region and the lower surface of N-type epitaxy layer.
In an embodiment, described N
-tagma extends towards direction, termination environment, and contacts with termination environment.
In an embodiment, described N
-tagma extends towards transition region direction, and contacts with a narrow shape P post region of transition region.
In an embodiment, described wide shape SiO
2the width in post district is 40 ~ 100 μm.
In an embodiment, the width of described narrow shape P post region is about 5 μm.
High pressure super-junction MOSFET device terminal structure described in the utility model, adopts wide shape SiO
2post district, this wide shape SiO
2post district extends to the lower surface of N shape epitaxial loayer by the upper surface of N shape epitaxial loayer, and wider width, be 40 ~ 100 μm, thus substantially reduce the area of terminal while reaching existing terminal voltage endurance capability.
Accompanying drawing explanation
Fig. 1 is the structural representation of prior art mesohigh super-junction MOSFET device terminal.
Fig. 2-1 is the structural representation of the utility model embodiment one.
Fig. 2-2 is the structural representation of embodiment one after the termination environment of N-type epitaxy layer makes deep trench.
Fig. 2-3 is the structural representation of embodiment one after the cellular region of N-type epitaxy layer makes cell body.
Fig. 3-1 is the structural representation of the utility model embodiment two.
Fig. 3-2 is the structural representation of embodiment two after the termination environment of N-type epitaxy layer makes many group deep trench.
Fig. 3-3 is the structural representation of embodiment two after the transition region and cellular region making cell body of N-type epitaxy layer.
Number in the figure is: 100,200-N type heavy doping substrate, 101,201-N type epitaxial loayer, 102,202-cellular region, 103,203-termination environment, and 104-P post district, 105-N type tagma, the narrow shape P post region of 204-, 205-N
-tagma, the wide shape SiO of 206-
2post district, 207-transition region, 208-first cell body, 209-second cell body, 210-the 3rd cell body.
Embodiment
Below in conjunction with concrete accompanying drawing, the utility model is described in further detail.
Embodiment one:
As shown in Fig. 2-1, high pressure super-junction MOSFET device terminal structure described in the utility model comprises cellular region 202 and termination environment 203, and cellular region 202 comprises N-type heavy doping substrate 200, N-type epitaxy layer 201 and the narrow shape P post region 204 that is formed in described N-type epitaxy layer 201 and N
-tagma 205, N
-tagma 205 is formed at the top of narrow shape P post region 204, and described N
-tagma 205 extends towards direction, termination environment 203, and contacts with termination environment 203; Described narrow shape P post region 204 is extended towards lower surface by the upper surface of N-type epitaxy layer 201, and there is preset pitch between the lower end of narrow shape P post region 204 and the lower surface of N-type epitaxy layer 201, and the width of narrow shape P post region 204 is generally about 5 μm.
Described termination environment 203 comprises N-type heavy doping substrate 200 and is arranged at the N-type epitaxy layer 201 of N-type heavy doping substrate 200 upper surface, and N-type epitaxy layer 201 arranges wide shape SiO
2post district 206, wide shape SiO
2post district 206 prolongs the lower surface of gentry to N-type epitaxy layer 201 by the upper surface of N-type epitaxy layer 201, wide shape SiO
2the width in post district 206 is 40 ~ 100 μm.
The manufacture craft of the high pressure super-junction MOSFET device terminal structure described in the present embodiment is as follows:
(1) on N-type heavy doping substrate 200, N-type epitaxy layer 201 is formed;
(2) in N-type epitaxy layer 201, termination environment 203 etches the width that a degree of depth is more than or equal to the first cell body 208, first cell body 208 of N-type epitaxy layer 201 thickness is 40 ~ 100 μm, as shown in Fig. 2-2;
(3) adopt the mode of deposited oxide layer, in the first cell body 208, fill up SiO
2, form wide shape SiO
2post district 206;
(4) adopt CMP(thinning/polishing) technique polishes wide shape SiO
2the upper surface in post district 206;
(5) follow-up by existing common process making cellular region 202, the N-type epitaxy layer 201 being specifically included in cellular region 202 etches formation second cell body 209, as Figure 2-3, between second cell body 209 and the lower surface of N-type epitaxy layer 201, there is default distance, the narrow shape P post region 204 of epitaxial growth in the second cell body 209; And form N at the top of narrow shape P post region 204
-type tagma 205; Finally obtain the high pressure super-junction MOSFET device terminal structure as shown in Fig. 2-1.
For existing high pressure super-junction MOSFET device, because the width of P post region is narrower, be generally about 5 μm, in order to obtain the withstand voltage of sufficiently high terminal area, termination environment must take very large area, and be the high pressure super-junction MOSFET device of 600V as withstand voltage, its terminal width is at least greater than 130 μm.And in the present embodiment, described wide shape SiO
2post district extends to the lower surface of N shape epitaxial loayer by the upper surface of N shape epitaxial loayer, and wider width, be 40 ~ 100 μm, thus substantially reduce the area of terminal while reaching existing terminal voltage endurance capability.
Embodiment two:
As shown in figure 3-1, high pressure super-junction MOSFET device terminal structure described in the utility model comprises cellular region 202, termination environment 203 and the transition region between cellular region 202 and termination environment 203 207, and cellular region 202 comprises N-type heavy doping substrate 200, N-type epitaxy layer 201 and the narrow shape P post region 204 that is formed in described N-type epitaxy layer 201 and N
-tagma 205, N
-tagma 205 is formed at the top of narrow shape P post region 204, and described N
-tagma 205 extends towards direction, termination environment 203, and contacts with transition region 207; Described narrow shape P post region 204 is extended towards lower surface by the upper surface of N-type epitaxy layer 201, and there is preset pitch between the lower end of narrow shape P post region 204 and the lower surface of N-type epitaxy layer 201, and the width of narrow shape P post region 204 is generally about 5 μm.
Described transition region 207 comprises N-type heavy doping substrate 200, N-type epitaxy layer 201 and is formed at two narrow shape P post region 204 in this N-type epitaxy layer 201, the top of a narrow shape P post region 204 of transition region 207 and the N of cellular region 202
-tagma 205 contacts.Described narrow shape P post region 204 is extended towards lower surface by the upper surface of N-type epitaxy layer 201, and there is preset pitch between the lower end of narrow shape P post region 204 and the lower surface of N-type epitaxy layer 201, and the width of narrow shape P post region 204 is generally about 5 μm.
Described termination environment 203 comprises N-type heavy doping substrate 200 and is arranged at the N-type epitaxy layer 201 of N-type heavy doping substrate 200 upper surface, and N-type epitaxy layer 201 arranges wide shape SiO
2post district 206, wide shape SiO
2post district 206 prolongs the lower surface of gentry to N-type epitaxy layer 201 by the upper surface of N-type epitaxy layer 201, wide shape SiO
2the width in post district 206 is 40 ~ 100 μm.
The manufacture craft of the high pressure super-junction MOSFET device terminal structure described in the present embodiment is as follows:
(1) on N-type heavy doping substrate 200, N-type epitaxy layer 201 is formed;
(2) in N-type epitaxy layer 201, termination environment 203 etches the 3rd cell body 210 that multiple degree of depth is more than or equal to N-type epitaxy layer 201 thickness, the width of the 3rd cell body 210 is 2 ~ 5 μm, the width of the 3rd cell body 210 and the ratio of the 3rd cell body 210 spacing are 10:4, as shown in figure 3-2;
(3) adopt the mode of wet oxygen growth oxide layer, between the 3rd cell body 210, grow SiO
2, form the wide shape SiO filled by oxide layer
2post district 206;
(4) adopt CMP(thinning/polishing) technique polishes wide shape SiO
2the upper surface in post district 206;
(5) follow-up by existing common process making cellular region 202 and transition region 207, the N-type epitaxy layer 201 being specifically included in cellular region 202 and transition region 207 etches formation second cell body 209, as shown in Fig. 3-3, between second cell body 209 and the lower surface of N-type epitaxy layer 201, there is default distance, the narrow shape P post region 204 of epitaxial growth in the second cell body 209; And N is formed on the top of narrow shape P post region 204 in cellular region 202
-type tagma 205; Finally obtain high pressure super-junction MOSFET device terminal structure as shown in figure 3-1.
Claims (7)
1. a high pressure super-junction MOSFET device terminal structure, comprise cellular region (202) and termination environment (203), it is characterized in that: described termination environment (203) comprise N-type heavy doping substrate (200) and are arranged at the N-type epitaxy layer (201) of N-type heavy doping substrate (200) upper surface, and N-type epitaxy layer (201) arranges wide shape SiO
2post district (206), wide shape SiO
2post district (206) prolongs the lower surface of gentry to N-type epitaxy layer (201) by the upper surface of N-type epitaxy layer (201).
2. high pressure super-junction MOSFET device terminal structure as claimed in claim 1, it is characterized in that: there is between described cellular region (202) and termination environment (203) transition region (207), described transition region (207) comprises N-type heavy doping substrate (200), N-type epitaxy layer (201) and two the narrow shape P post region (204) be formed in this N-type epitaxy layer (201), narrow shape P post region (204) is extended towards lower surface by the upper surface of N-type epitaxy layer (201), and there is preset pitch between the lower end of narrow shape P post region (204) and the lower surface of N-type epitaxy layer (201).
3. high pressure super-junction MOSFET device terminal structure as claimed in claim 1 or 2, is characterized in that: described cellular region (202) comprise N-type heavy doping substrate (200), N-type epitaxy layer (201) and the narrow shape P post region (204) that is formed in described N-type epitaxy layer (201) and N
-tagma (205), N
-tagma (205) is formed at the top of narrow shape P post region (204); The narrow shape P post region (204) of described cellular region (202) is extended towards lower surface by the upper surface of N-type epitaxy layer (201), and there is preset pitch between the lower surface of the lower end of narrow shape P post region (204) and N-type epitaxy layer (201).
4. high pressure super-junction MOSFET device terminal structure as claimed in claim 3, is characterized in that: described N
-tagma (205) extends towards termination environment (203) direction, and contacts with termination environment (203).
5. high pressure super-junction MOSFET device terminal structure as claimed in claim 3, is characterized in that: described N
-tagma (205) extends towards transition region (207) direction, and contacts with a narrow shape P post region (204) of transition region (207).
6. high pressure super-junction MOSFET device terminal structure as claimed in claim 1 or 2, is characterized in that: described wide shape SiO
2the width in post district (206) is 40 ~ 100 μm.
7. high pressure super-junction MOSFET device terminal structure as claimed in claim 3, is characterized in that: the width of described narrow shape P post region (204) is about 5 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520332644.0U CN204668310U (en) | 2015-05-21 | 2015-05-21 | High pressure super-junction MOSFET device terminal structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520332644.0U CN204668310U (en) | 2015-05-21 | 2015-05-21 | High pressure super-junction MOSFET device terminal structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204668310U true CN204668310U (en) | 2015-09-23 |
Family
ID=54138665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520332644.0U Active CN204668310U (en) | 2015-05-21 | 2015-05-21 | High pressure super-junction MOSFET device terminal structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204668310U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104851908A (en) * | 2015-05-21 | 2015-08-19 | 无锡同方微电子有限公司 | High-voltage super-junction MOSFET device terminal structure and manufacturing method thereof |
-
2015
- 2015-05-21 CN CN201520332644.0U patent/CN204668310U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104851908A (en) * | 2015-05-21 | 2015-08-19 | 无锡同方微电子有限公司 | High-voltage super-junction MOSFET device terminal structure and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103746002B (en) | A kind of step groove-field limiting ring composite terminal structure | |
| CN102214678B (en) | 3D-RESURF junction terminal structure of power semiconductor | |
| CN104992976A (en) | VDMOS device and manufacturing method thereof | |
| CN103035677B (en) | Super-junction structures, super junction MOS transistor and manufacture method thereof | |
| CN101969073A (en) | Rapid superjunction longitudinal double-diffusion metal oxide semiconductor transistor | |
| CN102945804B (en) | Method for manufacturing trench gate type IGBT (insulated gate bipolar transistor) chip | |
| CN113838937A (en) | Deep-groove super-junction MOSFET power device and preparation method thereof | |
| CN104934465A (en) | Super junction composition preparation method | |
| CN103681779A (en) | Field effect transistor structure and manufacturing method thereof | |
| CN106356401B (en) | A kind of field limiting ring terminal structure of power semiconductor | |
| CN204243047U (en) | The orthogonal super junction turning terminal of groove super junction-semiconductor device | |
| CN102969356A (en) | Terminal structure of super-junction power device | |
| CN204668310U (en) | High pressure super-junction MOSFET device terminal structure | |
| CN203288599U (en) | VDMOS device of novel structure | |
| CN105633153A (en) | Super junction semiconductor device and formation method thereof | |
| CN205564758U (en) | Ultra -low power consumption semiconductor power device | |
| CN103730355B (en) | A kind of manufacture method of super-junction structure | |
| CN104851908A (en) | High-voltage super-junction MOSFET device terminal structure and manufacturing method thereof | |
| CN201749852U (en) | Fast ultra-junction longitudinal double diffusion metal oxide semiconductor tube | |
| CN104332489A (en) | Terminal with surface super-structure and of semiconductor device | |
| CN108063159A (en) | The terminal structure of semiconductor power device, semiconductor power device and preparation method thereof | |
| CN107994067A (en) | The terminal structure and preparation method thereof of semiconductor power device, semiconductor power device | |
| CN203733802U (en) | Semiconductor device having super-junction structure | |
| CN103022090A (en) | High-efficiency high-voltage-resistant Schottky chip | |
| CN209626219U (en) | A kind of semiconductor power device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: High-voltage super-junction MOSFET device terminal structure and manufacturing method thereof Effective date of registration: 20170117 Granted publication date: 20150923 Pledgee: Agricultural Bank of China Limited by Share Ltd. Wuxi science and Technology Branch Pledgor: WUXI TONGFANG MICROELECTRONICS Co.,Ltd. Registration number: 2017990000043 |
|
| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| CP03 | Change of name, title or address |
Address after: 214135 D2 four, China International Innovation Network, China sensor network, No. 200 Linghu Avenue, new Wu District, Wuxi, Jiangsu. Patentee after: WUXI UNIGROUP MICROELECTRONICS CO.,LTD. Country or region after: China Address before: 214135 China Jiangsu Sensor Network International Innovation Park 200, Linghu Avenue, Wuxi new district. Patentee before: WUXI TONGFANG MICROELECTRONICS Co.,Ltd. Country or region before: China |