CN204651329U - A kind of film iii-v solar cell - Google Patents
A kind of film iii-v solar cell Download PDFInfo
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- CN204651329U CN204651329U CN201520338398.XU CN201520338398U CN204651329U CN 204651329 U CN204651329 U CN 204651329U CN 201520338398 U CN201520338398 U CN 201520338398U CN 204651329 U CN204651329 U CN 204651329U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model discloses a kind of film iii-v solar cell, comprise active layer and be arranged at the metal electrode layer on described active layer, described battery also comprises a supporting layer and adhesive layer, described adhesive layer is bonded between described active layer and supporting layer, is respectively provided with described metal electrode layer on the sensitive surface of described active layer He on shady face.Thin-film solar cells provided by the utility model, owing to being provided with metal electrode layer on active layer shady face, metal electrode layer wherein does not cover the shady face of active layer completely, greatly reduce the area coverage of the metal electrode layer be positioned on active layer shady face, thus decrease the conducting possibility with sensitive surface place metal electrode interlayer, add the stability of battery, make the tow sides of battery all can absorb sunlight and generate electricity, substantially increase the generating efficiency of battery.
Description
Technical field
The utility model relates to a kind of solar cell equipment and preparation method thereof, more particularly, relates to a kind of film iii-v solar cell.
Background technology
At present, the photovoltaic devices based on III-V epitaxially grows on substrate, and remains fixed on substrate as solar cell in whole manufacture process.In many cases, the wafer of substrate can be about 150 μm thick, make substrate have such thickness and may cause many adverse consequencess to solar cell, such as: weight is large, poor thermal conductivity, substrate is all used for making solar cell and causes waste; Priorly lose flexibility, can not curved surface be applied.If but it is more fragile substrate to be done thin meeting, is unfavorable for operation, has so just had the generation of film III-V solar cell.
Disclose a kind of film III-V solar cell in Chinese patent literature CN 101785115, because dorsum electrode layer is whole, therefore can not make full use of the light of cell backside.
At present, two-sided solar cell is mainly used in crystal silicon solar batteries field, a kind of double-side photic heterojunction monocrystaline silicon solar cell is disclosed in such as Chinese patent literature CN 103390677A, because crystal silicon solar batteries can not as flexible thin-film battery, and its conversion efficiency is lower than III-V solar cell.Meanwhile, because III-V has plurality of advantages in manufacture solar cell, such as GaAs is direct band gap, and band gap width is 1.42eV (300K), absorption sunlight that can be good; Some other polynary III-V compound can be with adjustable extent large, is suitable for manufacturing solar cell and extensively being paid attention to.Therefore need a kind of film iii-v solar cell to promote battery efficiency.
Utility model content
For this reason, the utility model is in order to improve the generating efficiency of solar cell further, and increase the stability of battery, the utility model provides a kind of film iii-v solar cell.
For solving the problems of the technologies described above, the technical solution of the utility model is:
A kind of film iii-v solar cell, comprise active layer and be arranged at the metal electrode layer on described active layer, described battery also comprises a supporting layer and adhesive layer, described adhesive layer is bonded between described active layer and supporting layer, is respectively provided with described metal electrode layer on the sensitive surface of described active layer He on shady face.
The area coverage being positioned at the metal electrode layer on described active layer shady face accounts for 10% ~ 20% of described active layer shady face area.
Described supporting layer and adhesive layer are transparent structural layers.
Described supporting layer is flexible insulating material polymeric support layer, and its thickness is 10 μm ~ 100 μm.
Described adhesive layer and the metal electrode layer on shady face are juxtaposed between described active layer and described supporting layer.
Described metal electrode layer is the electrode layer with conductive pattern.
Described conductive pattern is comb structure, comprises multiple parallel thin grid line and many and the vertically disposed main gate line of described thin grid line.
Described thin grid line width is 0.1mm ~ 0.2mm, and the distance described in two between thin grid line is 2mm ~ 3mm, and described main gate line width is 3mm ~ 4mm, and the distance described in two between main gate line is 10mm ~ 50mm.
The part sensitive surface of described active layer is also provided with an anti-reflecting layer, and described anti-reflecting layer to be positioned on described active layer sensitive surface not by part that metal electrode layer covers.
Technique scheme of the present utility model has the following advantages compared to existing technology:
A. thin-film solar cells provided by the utility model, owing to being provided with metal electrode layer being positioned on active layer shady face, metal electrode layer wherein does not cover the shady face of active layer completely, greatly reduce the area coverage of the metal electrode layer be positioned on active layer shady face, thus decrease the conducting possibility with sensitive surface place metal electrode interlayer, add the stability of battery.
B. because the utility model is also provided with metal electrode layer at the active layer back side, adopt transparent supporting layer and adhesive structure simultaneously, make the active layer back side also Absorbable rod to reflection come sunlight, achieve battery tow sides and all absorb sunlight and generate electricity, substantially increase the generating efficiency of battery.
C. the supporting layer in the utility model is flexible material, thus makes the range of application of battery wider, such as curved surface roof, roof, tent top etc.
Accompanying drawing explanation
In order to make content of the present utility model be more likely to be clearly understood, below according to specific embodiment of the utility model also by reference to the accompanying drawings, the utility model is described in further detail, wherein
Fig. 1 is the profile of thin-film solar cells provided by the utility model;
Fig. 2 is the plan structure schematic diagram of the metal electrode layer in Fig. 1;
Fig. 3 is the formation flow chart of thin-film solar cells provided by the utility model;
Fig. 4 is the structure in Fig. 1 before thin-film solar cells stripping;
Structure chart when Fig. 5 is thin-film solar cells tow sides provided by the utility model absorption sunlight.
In figure: 1-active layer; 2-metal electrode layer, the thin grid line of 21-, 22-main gate line; 3-adhesive layer; 4-supporting layer; 5-sacrifice layer; 6-substrate; 7-front sunlight; 8-backside reflection sunlight; 9-anti-reflecting layer.
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearly, below in conjunction with accompanying drawing, execution mode of the present utility model is described in further detail.
As shown in Figure 1, the utility model provides a kind of film iii-v solar cell, comprise and be positioned at nethermost supporting layer 4, supporting layer 4 is preferably flexible, thickness, at 10 ~ 100 μm, has acidresistant property, and material can be insulating material polymer, such as polyimides, PETG, such battery can be applied to curved surface; Supporting layer 4 is provided with metal electrode layer 2 and adhesive layer 3, metal electrode layer 2 and adhesive layer 3 are provided with active layer 1, supporting layer 4 and active layer 1 are carried out bonding connection by adhesive layer 3, are also provided with metal electrode layer 2 on the sensitive surface of active layer 1 simultaneously.
Further, as shown in Figure 1, the part sensitive surface of active layer is provided with anti-reflecting layer 9, metal electrode layer 2 is then arranged on another part sensitive surface, and anti-reflecting layer 9 and metal electrode layer 2 do not cover mutually, and wherein the material of anti-reflecting layer 9 can be ZnS, MgF
2, SiN, TiO
2with their combination etc., thickness is approximately 10 ~ 200nm scope.
Active layer 1 is wherein semi-conducting material, has particular bandgap, has the polynary III-V of doping, the structure of such as AlGaAs/GaAs; The metal electrode layer 2 be positioned on active layer 1 sensitive surface and shady face is the electrode layer with conductive pattern; Preferred conductive pattern structure is comb structure, comprise multiple parallel thin grid line 21 and many and the vertically disposed main gate line 22 of thin grid line 21, specifically as shown in Figure 2, parallel thin grid line 21 width is 0.1 ~ 0.2mm, interval 2 ~ 3mm, main gate line 22 width is 3 ~ 4mm, interval 10 ~ 50mm, and the electric conducting material that thin grid line 21 and main gate line 22 adopt can be gold, copper, aluminium, titanium, platinum, silver and their alloy etc.; Thickness is within the scope of 1 ~ 100 μm.
The utility model provide a kind of film iii-v battery to have following features: 1) battery supporting layer adopt flexible material, battery can be applied to curved surface, and its range of application is wider; 2) battery tow sides are all distributed with patterned metal electrode layer, the tow sides of battery can be made all can to absorb sunlight and generate electricity, compare common thin-film solar cells and have higher generating efficiency.
Below film iii-v solar cell Making programme provided by the utility model is described in detail, as shown in Figure 3:
The growth pattern of the III-V in the utility model comprises MOCVD, the mode of other extensions such as MBE; III-V substrate can be new substrate, also can be the substrate reused after peeling off with battery after removing sacrifice layer;
Step 1, at III-V wafer substrates Epitaxial growth sacrifice layer
Sacrifice layer 5 can be may also be with substrate 6 Lattice Matching not mate, and realizes transition by elder generation's grown buffer layer on substrate 6; The material of sacrifice layer 5 can be the material that the method by peeling off is removed, such as Al
xga
1-xas, wherein x>0.8; Or In
xal
1-xas, wherein x is about 0.5; The thickness of sacrifice layer is between 10 ~ 200nm.
Step 2, sacrifice layer forms active layer
This active layer 1 is epitaxially grown sandwich construction, and its thickness is 100nm ~ 10 μm scopes.Active layer 1 can be the single solar battery structure with PN junction and Window layer, such as at sacrifice layer Epitaxial growth n-InGaP/n-GaAs/p-GaAs/p-InGaP, or n-AlGaAs/n-GaAs/p-GaAs/p-AlGaAs etc.
Step 3, growing metal electrode layer on active layer
On metal electrode layer 2, the graphic method of conductive pattern can be adopted with the following method: 1. directly apply patterned metal paste by the mode of silk screen printing, and then sintering forms patterned metal electrode layer 2; 2. also can form patterned corrosion-resistant material by the mode of silk screen printing or photoetching, and then sputter, evaporation, the modes such as plating form patterned metal electrode layer 2.Described before the material of metal electrode layer 2, thickness and figure.Supporting layer 4 with adhesive layer 3 combines with active layer 1 by the mode then by adding hot pressing; In addition, also first can form patterned metal electrode layer 2 on supporting layer 4, then the supporting layer 4 with metal electrode layer 2 and adhesive layer 3 is combined with active layer 1.Form structure as shown in Figure 4.
Step 4, removes sacrifice layer by active layer and substrate desquamation.
The method peeled off can be soak 1 ~ 10h in 10% ~ 30%HF solution, and is heated to 50 ~ 100 DEG C.Can carry out next step PROCESS FOR TREATMENT to the active layer 1 after stripping, and substrate 6 can carry out processing rear recycling, manufactures next thin-film solar cells.
Step 5, active layer 1 sensitive surface after stripping grows the metal electrode layer 2 in front, described, and repeated no more here before the graphic method of metal electrode layer 2, material, thickness and figure.
Step 6, by the mode of PVD or CVD, the sensitive surface of active layer 1 does not have the position growth anti-reflecting layer 9 of metal electrode layer 2.Describe before anti-reflecting layer 9 material and thickness.Can cover in by mask the mode that metal electrode layer 2 deposits again, or re-use the anti-reflecting layer that laser scoring portion removes on metal electrode after whole process deposition of antiglare layer 9 and realize.
Embodiment 1
Step 1, at GaAs wafer substrates Epitaxial growth sacrifice layer 5, the materials A lAs of sacrifice layer 5, the thickness 10 ~ 20nm of sacrifice layer 5, as shown in Figure 4.
Step 2, sacrifice layer 5 is formed active layer 1, and active layer 1 is epitaxially grown sandwich construction, is single solar cell, and thickness is greatly about 1 ~ 2 μm of scope.Active layer battery structure: n-AlGaAs/n-GaAs/p-GaAs/p-AlGaAs.
Step 3, growing metal electrode layer 2 on active layer 1.The graphic method of metal electrode layer 2 directly applies patterned metal paste by the mode of silk screen printing, then sintering forms patterned metal electrode layer 2, conductive pattern is comb structure, as shown in Figure 2, comprise parallel thin grid line 21, and the main gate line 22 that thin grid line 21 parallel with many is vertical, thin grid line 21 width range is at 0.1 ~ 0.2mm, interval 2 ~ 3mm, main gate line 22 width range 3 ~ 4mm, spacing is 10 ~ 50mm; Electric conducting material can be copper, aluminium, platinum, silver and their alloy etc., and thickness is within the scope of 1 ~ 20 μm.Supporting layer 4 with adhesive layer 3 combines with active layer 1 by the mode then by adding hot pressing; Supporting layer 4 is insulating material polymer.Form structure as shown in Figure 4.
Step 4, removes sacrifice layer 5 by active layer 1 and substrate desquamation.The method peeled off can be soak 4 ~ 5h in 10% ~ 15%HF solution, and is heated to 70 ~ 100 DEG C.
Step 5, the sensitive surface growing metal electrode layer 2 of the active layer 1 after stripping, the graphic method of metal electrode layer 2, material, thickness are the same with the metal electrode layer 2 on active layer 1 shady face with figure, repeat no more here.
Step 6, by the mode of reactive sputtering, at the position do not covered by the metal electrode layer 2 growth anti-reflecting layer 9 of active layer 1 sensitive surface, it is ZnS, MgF
2and their combination etc., thickness is approximately 50 ~ 100nm scope.Can cover in by mask the mode that metal electrode layer deposits again to obtain.
By the two-side film membrane iii-v battery that said method is obtained, its using state as shown in Figure 5, front sunlight 7 is irradiated on anti-reflecting layer 9, and formed the after reflection backside reflection sunlight 8 of front sunlight 7 is irradiated to the back side of battery, thus realizes the double-side photic generating of solar cell, significantly improve the generating efficiency of battery, meanwhile, supporting layer 4 is made for flexible material, therefore, also be can be used on curved surface by the battery obtained by the utility model, such as the place such as curved surface roof or roof.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here without the need to also giving exhaustive to all execution modes.And thus the apparent change of extending out or variation be still among the scope of the utility model protection.
Claims (9)
1. a film iii-v solar cell, comprise active layer and be arranged at the metal electrode layer on described active layer, it is characterized in that, described battery also comprises a supporting layer and adhesive layer, described adhesive layer is bonded between described active layer and supporting layer, is respectively provided with described metal electrode layer on the sensitive surface of described active layer He on shady face.
2. film iii-v solar cell according to claim 1, is characterized in that, the area coverage being positioned at the metal electrode layer on described active layer shady face accounts for 10% ~ 20% of described active layer shady face area.
3. film iii-v solar cell according to claim 1, is characterized in that, described supporting layer and adhesive layer are transparent structural layers.
4. film iii-v solar cell according to claim 3, is characterized in that, described supporting layer is flexible insulating material polymeric support layer, and its thickness is 10 μm ~ 100 μm.
5. film iii-v solar cell according to claim 3, is characterized in that, described adhesive layer and the metal electrode layer on shady face are juxtaposed between described active layer and described supporting layer.
6., according to the arbitrary described film iii-v solar cell of claim 1-5, it is characterized in that, described metal electrode layer is the electrode layer with conductive pattern.
7. film iii-v solar cell according to claim 6, it is characterized in that, described conductive pattern is comb structure, comprises multiple parallel thin grid line and many and the vertically disposed main gate line of described thin grid line.
8. film iii-v solar cell according to claim 7, it is characterized in that, described thin grid line width is 0.1mm ~ 0.2mm, and the distance described in two between thin grid line is 2mm ~ 3mm, described main gate line width is 3mm ~ 4mm, and the distance described in two between main gate line is 10mm ~ 50mm.
9. film iii-v solar cell according to claim 1, is characterized in that, the part sensitive surface of described active layer is also provided with anti-reflecting layer, and described anti-reflecting layer to be positioned on described active layer sensitive surface not by part that metal electrode layer covers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520338398.XU CN204651329U (en) | 2015-05-22 | 2015-05-22 | A kind of film iii-v solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520338398.XU CN204651329U (en) | 2015-05-22 | 2015-05-22 | A kind of film iii-v solar cell |
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| Publication Number | Publication Date |
|---|---|
| CN204651329U true CN204651329U (en) | 2015-09-16 |
Family
ID=54104044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520338398.XU Active CN204651329U (en) | 2015-05-22 | 2015-05-22 | A kind of film iii-v solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204651329U (en) |
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2015
- 2015-05-22 CN CN201520338398.XU patent/CN204651329U/en active Active
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee after: BEIJING CHUANGYU TECHNOLOGY Co.,Ltd. Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee before: BEIJING HANERGY CHUANGYU S&T Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee after: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY Co.,Ltd. Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee before: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY (BEIJING) Co.,Ltd. Address after: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee after: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY (BEIJING) Co.,Ltd. Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee before: Beijing Chuangyu Technology Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210129 Address after: Unit 611, unit 3, 6 / F, building 1, yard 30, Yuzhi East Road, Changping District, Beijing 102208 Patentee after: Zishi Energy Co.,Ltd. Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital Patentee before: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY Co.,Ltd. |