CN204615646U - A kind of three mould boosting charge pumps - Google Patents
A kind of three mould boosting charge pumps Download PDFInfo
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- CN204615646U CN204615646U CN201520322124.1U CN201520322124U CN204615646U CN 204615646 U CN204615646 U CN 204615646U CN 201520322124 U CN201520322124 U CN 201520322124U CN 204615646 U CN204615646 U CN 204615646U
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Abstract
The utility model provides a kind of three mould boosting charge pumps, comprises 2 nmos switch pipes, 7 PMOS switch pipes and 3 electric capacity; 2 MOS switching tubes are followed successively by the first NMOS tube and the second NMOS tube; 7 PMOS switch pipes are followed successively by the first PMOS, the second PMOS, the 3rd PMOS, the 4th PMOS, the 5th PMOS, the 8th PMOS and the 9th PMOS; 3 electric capacity are followed successively by the first pump electric capacity, the second pump electric capacity and output capacitance.Useful technique effect: the utility model when device count and type constant, 1.5 times, 2 times, 3 times three kinds of boost modes can be realized, can meet when mains voltage variations, the demand of subsequent module operating voltage.
Description
Technical field
The utility model type belongs to field of power management, is specifically related to a kind of three mould boosting charge pumps.
Background technology
Existing first class boost charge pump only realizes 2 times of input power, in the application of reality, supply voltage is in use more and more lower, higher requirement is had to the multiplication of voltage ability of charge pump, if need to realize the higher multiple of input power, meet the requirement of driving voltage, the progression of charge pump must be increased, cause the complex structure of circuit.In addition, existing charge pump circuit system, to possess the enlarging function of 2 times and 3 times simultaneously, needs, by increasing electric capacity and progression to meet application demand, also can improve the complexity of circuit.
In sum, charge pump market needing a kind of new construction is needed.
Utility model content
The utility model provides a kind of boosting main body circuit of capacitive charge pump, can realize 1.5 times, 2 times, 3 times three kinds of boost modes.According to the size of supply voltage, when not changing electric capacity and switching tube number, carrying out the conversion of three kinds of boost modes, meeting voltage requirements, improve the conversion efficiency of charge pump, reduce the power consumption of electronic product, extend the service time of battery.
A kind of three mould boosted charge pump circuits, comprise 2 nmos switch pipes, 7 PMOS switch pipes and 3 electric capacity; Wherein, 2 MOS switching tubes are followed successively by the first NMOS tube MN1 and the second NMOS tube MN2; 7 PMOS switch pipes are followed successively by the first PMOS MP1, the second PMOS MP2, the 3rd PMOS MP3, the 4th PMOS MP4, the 5th PMOS MP5, the 8th PMOS MP8 and the 9th PMOS MP9; 3 electric capacity are followed successively by the first pump electric capacity Cf1, the second pump electric capacity Cf2 and output capacitance C
oUT; Concrete annexation is:
The source electrode of the source electrode of the 3rd PMOS MP3, the source electrode of the 4th PMOS MP4, the 5th PMOS MP5 is connected with input power VCC respectively; The drain electrode of the 3rd PMOS MP3 is connected with the negative pole of the first pump electric capacity Cf1, the source electrode of the first NMOS tube MN1 respectively; The drain electrode of the 4th PMOS MP4 is connected with the positive pole of the first pump electric capacity Cf1, the drain electrode of the 8th PMOS MP8, the drain electrode of the 9th PMOS MP9 respectively; The source electrode of the 8th PMOS MP8 is connected with the drain electrode of the second PMOS MP2, the drain electrode of the first PMOS MP1, the positive pole of the second pump electric capacity Cf2 respectively;
The source electrode of the 9th PMOS MP9 is connected with the negative pole of the second pump electric capacity Cf2, the drain electrode of the 5th PMOS MP5, the source electrode of the second NMOS tube MN2 respectively; The source electrode of the first PMOS MP1 and output capacitance C
oUTpositive pole be connected; The source electrode of the first PMOS MP1 and output capacitance C
oUTpositive pole between node be output voltage AVDD; The drain electrode of the first NMOS tube MN1, the drain electrode of the second NMOS tube MN2, output capacitance C
oUTnegative plate be connected with ground voltage end VSS respectively.
useful technique effect
The utility model, when the supply voltage inputted reduces, can change boost mode, its output voltage is remained unchanged.
The utility model utilizes nine MOS power tubes, two pump electric capacity, can realize low multiplication of voltage 1.5 times, 2 times and 3 times of boost modes, greatly can improve the flying power of battery.
Switching tube of the present utility model adopts metal-oxide-semiconductor, can meet the demand of speed-sensitive switch action.Switched capacitor charge pump described in the utility model realizes the conversion of voltage by the discharge and recharge of metal-oxide-semiconductor control capacitance, its power consumption is little, cost is low, structure is simple, without the need to advantages such as the peripheral assemblies such as inductance, diode, MOSFET and high EMI suppression, thus greatly reduce power volume, improve conversion efficiency.
Accompanying drawing explanation
Fig. 1 is circuit structure diagram of the present utility model.
Embodiment
Below in conjunction with accompanying drawing, explanation is described in further detail to the utility model.
See Fig. 1, a kind of three mould boosting charge pumps, comprise 2 nmos switch pipes, 7 PMOS switch pipes and 3 electric capacity; Wherein, 2 MOS switching tubes are followed successively by the first NMOS tube MN1 and the second NMOS tube MN2; 7 PMOS switch pipes are followed successively by the first PMOS MP1, the second PMOS MP2, the 3rd PMOS MP3, the 4th PMOS MP4, the 5th PMOS MP5, the 8th PMOS MP8 and the 9th PMOS MP9; 3 electric capacity are followed successively by the first pump electric capacity Cf1, the second pump electric capacity Cf2 and output capacitance C
oUT; Concrete annexation is:
The source electrode of the source electrode of the 3rd PMOS MP3, the source electrode of the 4th PMOS MP4, the 5th PMOS MP5 is connected with input supply terminal VCC respectively; The drain electrode of the 3rd PMOS MP3 is connected with the negative plate of the first pump electric capacity Cf1, the source electrode of the first NMOS tube MN1 respectively; The drain electrode of the 4th PMOS MP4 is connected with the positive plate of the first pump electric capacity Cf1, the drain electrode of the 8th PMOS MP8, the drain electrode of the 9th PMOS MP9 respectively; The source electrode of the 8th PMOS MP8 is connected with the drain electrode of the second PMOS MP2, the drain electrode of the first PMOS MP1, the positive plate of the second pump electric capacity Cf2 respectively; The source electrode of the 9th PMOS MP9 is connected with the negative plate of the second pump electric capacity Cf2, the drain electrode of the 5th PMOS MP5, the source electrode of the second NMOS tube MN2 respectively; The source electrode of the first PMOS MP1 and output capacitance C
oUTpositive plate be connected; The source electrode of the first PMOS MP1 and output capacitance C
oUTpositive plate between node be output terminals A VDD; The drain electrode of the first NMOS tube MN1, the drain electrode of the second NMOS tube MN2, output capacitance C
oUTnegative plate be connected with ground voltage end VSS respectively.
Furtherly, the capacitance of the first pump electric capacity Cf1 is equal with the capacitance of the second pump electric capacity Cf2.
Embodiment 1:
When the operating voltage range of battery is 2.3v ~ 4.8v, when the driving voltage of needs is 6.5v, adopt each stage condition after the utility model as follows respectively:
When the virtual voltage of battery is 4.8V, the output voltage after this circuit amplifies 1.5 times can reach 7.2V.
When the virtual voltage of battery is 3.3V, amplifying the output voltage after 2 times through this circuit is 6.6V.
When the virtual voltage of battery is 2.3V, amplifying the output voltage after 3 times through this circuit is 6.9V.
Claims (2)
1. three mould boosting charge pumps, is characterized in that: comprise 2 nmos switch pipes, 7 PMOS switch pipes and 3 electric capacity; Wherein, 2 MOS switching tubes are followed successively by the first NMOS tube MN1 and the second NMOS tube MN2; 7 PMOS switch pipes are followed successively by the first PMOS MP1, the second PMOS MP2, the 3rd PMOS MP3, the 4th PMOS MP4, the 5th PMOS MP5, the 8th PMOS MP8 and the 9th PMOS MP9; 3 electric capacity are followed successively by the first pump electric capacity Cf1, the second pump electric capacity Cf2 and output capacitance C
oUT; Concrete annexation is:
The source electrode of the source electrode of the 3rd PMOS MP3, the source electrode of the 4th PMOS MP4, the 5th PMOS MP5 is connected with input VCC respectively; The drain electrode of the 3rd PMOS MP3 is connected with the negative plate of the first pump electric capacity Cf1, the source electrode of the first NMOS tube MN1 respectively; The drain electrode of the 4th PMOS MP4 is connected with the positive plate of the first pump electric capacity Cf1, the drain electrode of the 8th PMOS MP8, the drain electrode of the 9th PMOS MP9 respectively; The source electrode of the 8th PMOS MP8 is connected with the drain electrode of the second PMOS MP2, the drain electrode of the first PMOS MP1, the positive plate of the second pump electric capacity Cf2 respectively; The source electrode of the 9th PMOS MP9 is connected with the negative plate of the second pump electric capacity Cf2, the drain electrode of the 5th PMOS MP5, the source electrode of the second NMOS tube MN2 respectively; The source electrode of the first PMOS MP1 and output capacitance C
oUTpositive plate be connected; The source electrode of the first PMOS MP1 and output capacitance C
oUTpositive plate between node be output terminals A VDD; The drain electrode of the first NMOS tube MN1, the drain electrode of the second NMOS tube MN2, output capacitance C
oUTnegative plate be connected with ground voltage end VSS respectively.
2. a kind of three mould boosting charge pumps according to claim 1, is characterized in that: the capacitance of the first pump electric capacity Cf1 is equal with the capacitance of the second pump electric capacity Cf2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520322124.1U CN204615646U (en) | 2015-05-19 | 2015-05-19 | A kind of three mould boosting charge pumps |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520322124.1U CN204615646U (en) | 2015-05-19 | 2015-05-19 | A kind of three mould boosting charge pumps |
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| Publication Number | Publication Date |
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| CN204615646U true CN204615646U (en) | 2015-09-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201520322124.1U Active CN204615646U (en) | 2015-05-19 | 2015-05-19 | A kind of three mould boosting charge pumps |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105186860A (en) * | 2015-10-27 | 2015-12-23 | 无锡中感微电子股份有限公司 | Charge pump |
| CN107612318A (en) * | 2017-09-30 | 2018-01-19 | 北京大学深圳研究生院 | Charge pump circuit |
| CN110022059A (en) * | 2017-12-20 | 2019-07-16 | 美光科技公司 | Electronic device and its operating method |
| US11088617B2 (en) | 2017-12-20 | 2021-08-10 | Micron Technology, Inc. | Electronic device with an output voltage booster mechanism |
-
2015
- 2015-05-19 CN CN201520322124.1U patent/CN204615646U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105186860A (en) * | 2015-10-27 | 2015-12-23 | 无锡中感微电子股份有限公司 | Charge pump |
| CN107612318A (en) * | 2017-09-30 | 2018-01-19 | 北京大学深圳研究生院 | Charge pump circuit |
| CN110022059A (en) * | 2017-12-20 | 2019-07-16 | 美光科技公司 | Electronic device and its operating method |
| US11088617B2 (en) | 2017-12-20 | 2021-08-10 | Micron Technology, Inc. | Electronic device with an output voltage booster mechanism |
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