CN204597930U - A kind of for the level displacement circuit in half-bridge driven - Google Patents
A kind of for the level displacement circuit in half-bridge driven Download PDFInfo
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- CN204597930U CN204597930U CN201520330141.XU CN201520330141U CN204597930U CN 204597930 U CN204597930 U CN 204597930U CN 201520330141 U CN201520330141 U CN 201520330141U CN 204597930 U CN204597930 U CN 204597930U
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Abstract
The utility model relates to a kind of for the level displacement circuit in half-bridge driven, comprise constant current source, input stage triode, the current mirror matched with constant current source, load resistance, first bleeder circuit, second bleeder circuit and inverter, described first bleeder circuit is in series by least two pressure-bearing triodes, described second bleeder circuit is in series by least two divider resistances, described current mirror adopts the triode of two same models to connect and compose back-to-back, described inverter is composed in series by output stage triode and current-limiting resistance, the positive pole of described constant current source is connected with VDD, input signal end IN connects the base stage of input stage triode, the output signal end OUT of half-bridge drive circuit is connected on the branch road between output stage triode and current-limiting resistance.The utility model greatly simplifies the semiconductor fabrication process of half-bridge drive circuit, and circuit structure is simple, and cost is low, and the mode adopting constant current to drive, reduces circuit power consumption, enhance its reliability.
Description
Technical field
The utility model relates to high voltage half-bridge drive circuit technical field, specifically a kind of for the pulse high voltage level shift circuit in half-bridge drive circuit.
Background technology
In high voltage half-bridge drive circuit, input pwm signal by microcontroller, drive two power devices (MOSFET or IGBT) by half-bridge drive circuit, one of them is high side switches, and another is lower edge switch simultaneously.The Signal transmissions on low limit is in identical power domain, and the Signal transmissions of flash transmits in two different power domain, signal be made effectively to transmit and just must use level displacement circuit.
In the prior art, usually need to manufacture high tension apparatus to realize level shift.As shown in Figure 1, be the transmission circuit topological structure of existing conventional half-bridge drive circuit flash signal.For convenience, unified definition is provided to various symbol in figure below: VDD is the supply voltage of half-bridge drive circuit, GND is power supply ground, IN is the PWM input signal end of microcontroller, OUT is the output signal end of half-bridge drive circuit, VB is the floating power supply voltage of high-pressure side driving circuit, and VS is floating ground.Input signal IN is arranged in the power domain of VDD ~ GND, and output signal OUT is arranged in the power domain of VB ~ VS, and the power domain of VB ~ VS will far above the power domain of VDD ~ GND, and usual VDD is 10 ~ 20V, and VB is at more than 60V, even can up to a few hectovolt.Two nmos pass transistors 104,105 need the high pressure born between VB to GND, and as in the application of electric motor car, this voltage is up to 60V ~ 150V.Input signal IN produces the start signal of nmos pass transistor 104 and 105 through pulse-generating circuit 101, and when when nmos pass transistor 104 is opened, nmos pass transistor 105 is closed, the R end of rest-set flip-flop 106 is 0, S end is 1, then OUT exports is 1; When nmos pass transistor 104 is closed, nmos pass transistor 105 is opened, the R end of rest-set flip-flop 106 is 1, S end is 0, then OUT exports is 0.Above-mentioned " 1 " signal represents high level VB, and " 0 " signal represents low level VS.Because the voltage between VB to GND is high pressure; when nmos pass transistor 104 and 105 is opened; have big current to flow through from resistance 102 or 103; if the duration is very long; then power consumption is very large; so prior art can add pulse generating circuit usually after input signal IN, produce the high impulse of short time, for opening nmos pass transistor 104 or 105.Because just impulse level opens nmos pass transistor 104 and 105, correct therefore in order to inhibit signal, must add rest-set flip-flop 106 and be used for latch output signal.
As can be seen here, use single-transistor to bear high pressure in prior art, which not only adds the difficulty of integrated circuit fabrication process, cause complex technical process, photoetching level is more, and in order to reduce circuit power consumption, increasing pulse-generating circuit and latch cicuit in circuit, thus bringing the significantly increase of integrated circuit cost.
Summary of the invention
The purpose of this utility model is to provide a kind of half-bridge driven level displacement circuit that can realize in common simple low-voltage semiconductor manufacturing process, solve half-bridge drive circuit to the dependence of high tension apparatus, by the principle of resistant series dividing potential drop, voltage division processing is carried out to the voltage between VB to GND, thus simplification circuit design, reduce circuit cost, and enhance the reliability of circuit.
To achieve these goals, the technical solution adopted in the utility model is, a kind of for the level displacement circuit in half-bridge driven, comprise constant current source, input stage triode, the current mirror matched with constant current source, load resistance, first bleeder circuit, second bleeder circuit and inverter, described first bleeder circuit is in series by least two pressure-bearing triodes, described second bleeder circuit is in series by least two divider resistances, the positive pole of described constant current source is connected with VDD, negative pole connects the collector electrode of input stage triode, input signal end IN connects the base stage of input stage triode, the emitter of input stage triode connects power supply ground GND, described current mirror adopts the triode of two same models to connect and compose back-to-back, the input of described current mirror connects the negative pole of constant current source, output is connected with one end of the first bleeder circuit, the other end of the first bleeder circuit connects one end of load resistance, the other end of load resistance is connected with the floating power supply voltage VB of high-pressure side driving circuit, one end of described second bleeder circuit is connected with the floating power supply voltage VB of high-pressure side driving circuit, the other end connects power supply ground GND, and the base stage of all pressure-bearing triodes is connected to the branch road of drawing between adjacent two divider resistances in described second bleeder circuit successively in described first bleeder circuit, described inverter is composed in series by output stage triode and current-limiting resistance, one end of current-limiting resistance is connected with the collector electrode of output stage triode, the other end is connected with floating ground VS, the emitter of output stage triode connects the floating power supply voltage VB of high-pressure side driving circuit, the base stage of output stage triode is connected to the branch road of drawing between load resistance and the first bleeder circuit, the output signal end OUT of half-bridge drive circuit is connected on the branch road between output stage triode and current-limiting resistance.
Improve as one of the present utility model, described constant current source can be produced by common current mirror mirror image, and its value is microampere rank.
Improve as one of the present utility model, the resistance of all divider resistances of connecting in described second bleeder circuit is identical.
Improve as one of the present utility model, described input stage triode adopts bipolar npn transistor npn npn, and described output stage triode adopts positive-negative-positive bipolar transistor, and described pressure-bearing triode adopts the bipolar npn transistor npn npn of same model.
Improve as one of the present utility model, described input stage triode can also adopt N-channel MOS transistor, and described output stage triode can also adopt P channel MOS transistor, and described pressure-bearing triode can also adopt the N-channel MOS transistor of same model.
Improve as one of the present utility model, described current mirror adopts the first triode of same model and the second triode to connect and compose back-to-back, described first triode and the second triode are bipolar npn transistor npn npn, the base stage of the first triode is connected with the base stage of the second triode, the emitter of the first triode and the emitter of the second triode meet power supply ground GND, the collector electrode of the first triode connects the negative pole of constant current source, the collector electrode of the second triode connects one end of the first bleeder circuit, and from drawing the negative pole that a branch road is connected to constant current source between the base stage and the base stage of the second triode of the first triode.
Relative to prior art, the utility model is by the second bleeder circuit, namely the principle of resistant series dividing potential drop is utilized, voltage division processing is carried out to the voltage between VB to GND, and on each divider node, connect the base stage of bipolar npn transistor npn npn, dividing potential drop is carried out by bipolar npn transistor npn npn series connection formation first bleeder circuit, so just the voltage between VB to GND is divided equally on the bipolar npn transistor npn npn of series connection, thus reduce the voltage that each pressure-bearing triode bears, finally can use the high voltage level shift circuit that common simple low-voltage semiconductor manufacturing process realizes in half-bridge drive circuit, greatly simplify the semiconductor fabrication process of half-bridge drive circuit, the high voltage half-bridge technique of complex and expensive need not be used, simplify complex circuit designs degree, reduce circuit cost, the input of circuit adopts the mode of constant current driving, greatly reduces the power consumption of circuit, and simplifies circuit structure, enhance the reliability of circuit to a certain extent.
Accompanying drawing explanation
Fig. 1 is level displacement circuit topology diagram conventional in existing half-bridge drive circuit.
The topology diagram of the level displacement circuit that Fig. 2 proposes for the utility model.
Fig. 3 is the level displacement circuit figure of the utility model embodiment.
Embodiment
In order to deepen understanding and cognition of the present utility model, below in conjunction with accompanying drawing the utility model be further described and introduce.
As Fig. 2-Fig. 3, for the level displacement circuit in half-bridge driven, comprise constant current source 201, input stage triode 202, the current mirror 1, load resistance 207, first bleeder circuit 3, second bleeder circuit 4 and the inverter 2 that match with constant current source.Described first bleeder circuit 3 is in series by the first pressure-bearing triode 205 and the second pressure-bearing triode 206, described first pressure-bearing triode 205 and the second pressure-bearing triode 206 adopt the bipolar npn transistor npn npn of same model, the collector electrode of described first pressure-bearing triode 205 connects the emitter of the second pressure-bearing triode 206, the emitter of the first pressure-bearing triode 205 connects the collector electrode of the second triode 204, and the collector electrode of the second pressure-bearing triode 206 connects one end of load resistance 207.The positive pole of described constant current source 201 is connected with VDD, and negative pole connects the collector electrode of input stage triode 202.Described input stage triode 202 adopts bipolar npn transistor npn npn, and described constant current source 201 can be produced by common current mirror mirror image, and it is microampere (uA) level currents.Input signal end IN connects the base stage of input stage triode 202, and the emitter of input stage triode 202 connects power supply ground GND.Described current mirror 1 adopts the first triode 203 of same model and the second triode 204 to connect and compose back-to-back, be specially the first triode 203 and the second triode 204 is bipolar npn transistor npn npn, the base stage of the first triode 203 is connected with the base stage of the second triode 204, the emitter of the first triode 203 and the emitter of the second triode 204 meet power supply ground GND, the collector electrode of the first triode 203 connects the negative pole of constant current source 201, and from drawing the negative pole that a branch road is connected to constant current source 201 between the base stage and the base stage of the second triode 204 of the first triode 203.One end of load resistance 207 connects the collector electrode of the second pressure-bearing triode 206, and the other end is connected with the floating power supply voltage VB of high-pressure side driving circuit.Described second bleeder circuit 4 is in series successively by divider resistance 208,209 and 210, and the resistance of divider resistance 208,209 and 210 designs according to 1:1:1, divider resistance 208 one end is connected with the floating power supply voltage VB of high-pressure side driving circuit, and divider resistance 210 connects power supply ground GND.The base stage of the second pressure-bearing triode 206 is connected to the branch road of drawing between divider resistance 208 and 209, and the base stage of the first pressure-bearing triode 205 is connected to the branch road of drawing between divider resistance 209 and 210.Described inverter 2 is composed in series by output stage triode 211 and current-limiting resistance 212, one end of current-limiting resistance 212 is connected with the collector electrode of output stage triode 211, the other end is connected with floating ground VS, the emitter of output stage triode 211 connects the floating power supply voltage VB of high-pressure side driving circuit, the base stage of output stage triode 211 is connected to the branch road of drawing between load resistance 207 and the collector electrode of the second pressure-bearing triode 206, and the output signal end OUT of half-bridge drive circuit is connected on the branch road between output stage triode 211 and current-limiting resistance 212.Described output stage triode 211 adopts positive-negative-positive bipolar transistor.
As the magnitude of voltage >0.7V that input signal end IN inputs, input stage triode 202 is opened, constant current source 201 electric current all passes through from input stage triode 202, then the first triode 203 and the second triode 204 are closed, C point voltage equals VB, output stage triode 211 is closed, output signal equals VS, namely the low level in VB ~ VS power domain, divider resistance 208 ~ 210 is by the voltage trisection between VB to GND, i.e. A point voltage Va=2/3VB, B point voltage Vb=1/3VB, then the second triode 204 bears voltage is 1/3VB-Vbe, it is (2/3VB-Vbe)-(1/3VB-Vbe)=1/3VB that first pressure-bearing triode 205 bears voltage, it is VB-(2/3VB-Vbe that second pressure-bearing triode 206 bears voltage)=1/3VB+Vbe, because Vbe is much smaller than VB, so the second triode 204, the voltage that first pressure-bearing triode 205 bears with the second pressure-bearing triode 206 is substantially identical, be all 1/3VB, it is just passable that the puncture voltage of single transistor is only greater than 1/3VB, achieve like this and use multiple low voltage transistor to carry out more high-tension level displacement circuit function.
As the magnitude of voltage <0.7V that input signal end IN inputs, input stage triode 202 is closed, then constant current source 201 electric current all passes through from the first triode 203, second triode 204 also flows through identical electric current by mirror image, load resistance 207, first pressure-bearing triode 205, second pressure-bearing triode 206 and the second triode 204 are connected, also same current is flow through, the pressure drop then produced on load resistance 207 is I*R, by the size of design current and load resistance 207, IR is made to be greater than the cut-in voltage Vbe of output stage triode 211, then output stage triode 211 is opened, output signal end OUT exports VB, namely the high level in VB ~ VS power domain.
In addition, owing to employing the mode that constant current drives, like this when the second triode 204 is opened, limit the electric current between VB to GND, reduce circuit power consumption, thus the second triode 204 can be allowed to open always, do not need to use pulse generating circuit to produce burst pulse, thus also not latch carry out latch output signal.
It should be noted that above-described embodiment is most preferred embodiment; the mode of 3 resistance and 3 transistor series is used to realize in embodiment; 2,4,5 even more transistors can certainly be used to realize; employ bipolar transistor in embodiment to realize; MOS transistor can certainly be used to realize same function; therefore above-described embodiment is not used for limiting protection range of the present utility model, equivalents done on the basis of technique scheme or the alternative scope all falling into the utility model claim and protect.
Claims (6)
1. one kind for the level displacement circuit in half-bridge driven, it is characterized in that: comprise constant current source, input stage triode, the current mirror matched with constant current source, load resistance, first bleeder circuit, second bleeder circuit and inverter, described first bleeder circuit is in series by least two pressure-bearing triodes, described second bleeder circuit is in series by least two divider resistances, the positive pole of described constant current source is connected with VDD, negative pole connects the collector electrode of input stage triode, input signal end IN connects the base stage of input stage triode, the emitter of input stage triode connects power supply ground GND, described current mirror adopts the triode of two same models to connect and compose back-to-back, the input of described current mirror connects the negative pole of constant current source, output is connected with one end of the first bleeder circuit, the other end of the first bleeder circuit connects one end of load resistance, the other end of load resistance is connected with the floating power supply voltage VB of high-pressure side driving circuit, one end of described second bleeder circuit is connected with the floating power supply voltage VB of high-pressure side driving circuit, the other end connects power supply ground GND, and the base stage of all pressure-bearing triodes is connected to the branch road of drawing between adjacent two divider resistances in described second bleeder circuit successively in described first bleeder circuit, described inverter is composed in series by output stage triode and current-limiting resistance, one end of current-limiting resistance is connected with the collector electrode of output stage triode, the other end is connected with floating ground VS, the emitter of output stage triode connects the floating power supply voltage VB of high-pressure side driving circuit, the base stage of output stage triode is connected to the branch road of drawing between load resistance and the first bleeder circuit, the output signal end OUT of half-bridge drive circuit is connected on the branch road between output stage triode and current-limiting resistance.
2. a kind ofly as claimed in claim 1 it is characterized in that for the level displacement circuit in half-bridge driven, described constant current source can be produced by common current mirror mirror image, and its value is microampere rank.
3. a kind ofly as claimed in claim 1 it is characterized in that for the level displacement circuit in half-bridge driven, the resistance of all divider resistances of connecting in described second bleeder circuit is identical.
4. a kind of for the level displacement circuit in half-bridge driven as claimed in claim 1, it is characterized in that, described input stage triode adopts bipolar npn transistor npn npn, described output stage triode adopts positive-negative-positive bipolar transistor, and described pressure-bearing triode adopts the bipolar npn transistor npn npn of same model.
5. a kind of for the level displacement circuit in half-bridge driven as described in claim 1 or 4, it is characterized in that, described input stage triode can also adopt N-channel MOS transistor, described output stage triode can also adopt P channel MOS transistor, and described pressure-bearing triode can also adopt the N-channel MOS transistor of same model.
6. a kind of for the level displacement circuit in half-bridge driven as claimed in claim 1, it is characterized in that, described current mirror adopts the first triode of same model and the second triode to connect and compose back-to-back, described first triode and the second triode are bipolar npn transistor npn npn, the base stage of the first triode is connected with the base stage of the second triode, the emitter of the first triode and the emitter of the second triode meet power supply ground GND, the collector electrode of the first triode connects the negative pole of constant current source, the collector electrode of the second triode connects one end of the first bleeder circuit, and from drawing the negative pole that a branch road is connected to constant current source between the base stage and the base stage of the second triode of the first triode.
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| CN201520330141.XU CN204597930U (en) | 2015-05-21 | 2015-05-21 | A kind of for the level displacement circuit in half-bridge driven |
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| CN201520330141.XU CN204597930U (en) | 2015-05-21 | 2015-05-21 | A kind of for the level displacement circuit in half-bridge driven |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104821816A (en) * | 2015-05-21 | 2015-08-05 | 苏州锴威特半导体有限公司 | Level shift circuit for half-bridge drive |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104821816A (en) * | 2015-05-21 | 2015-08-05 | 苏州锴威特半导体有限公司 | Level shift circuit for half-bridge drive |
| CN104821816B (en) * | 2015-05-21 | 2018-02-13 | 苏州锴威特半导体有限公司 | A kind of level displacement circuit being used in half-bridge driven |
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Address after: 215600 Shazhou Lake Science Park Building A1, 9 Floors, Yangshe Town, Zhangjiagang City, Suzhou City, Jiangsu Province Patentee after: Suzhou Covette Semiconductor Co., Ltd. Address before: 511, building 1, building B, science and Technology Pioneer Park, 215600 Cathay Pacific Road, Zhangjiagang economic and Technological Development Zone, Suzhou, Jiangsu, China Patentee before: Iron of fine quality Witter, Suzhou Semiconductor Co., Ltd |
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