CN204558531U - Light-emitting type packaging structure - Google Patents
Light-emitting type packaging structure Download PDFInfo
- Publication number
- CN204558531U CN204558531U CN201520248979.4U CN201520248979U CN204558531U CN 204558531 U CN204558531 U CN 204558531U CN 201520248979 U CN201520248979 U CN 201520248979U CN 204558531 U CN204558531 U CN 204558531U
- Authority
- CN
- China
- Prior art keywords
- illuminated
- encapsulating structure
- metal level
- light
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004806 packaging method and process Methods 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 40
- 239000004020 conductor Substances 0.000 claims abstract description 12
- 229910000679 solder Inorganic materials 0.000 claims abstract description 12
- 238000003466 welding Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 12
- 238000005538 encapsulation Methods 0.000 claims description 10
- 238000003825 pressing Methods 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 239000003292 glue Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000005496 eutectics Effects 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 7
- 238000005476 soldering Methods 0.000 description 11
- 238000004891 communication Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000011889 copper foil Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 2
- 239000004713 Cyclic olefin copolymer Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000004568 cement Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920005439 Perspex® Polymers 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
Landscapes
- Led Device Packages (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
A light emitting package structure, comprising: the light-emitting device comprises a solder mask layer, a metal layer embedded in the solder mask layer, a light-emitting element combined by a conductor and electrically connected to the metal layer, and a dielectric body pressed on the solder mask layer and embedding the light-emitting element in the dielectric body, so that the conventional transparent conductive layer is not required to be manufactured by the method, and the whole thickness can be greatly reduced.
Description
Technical field
The utility model about a kind of encapsulating structure, espespecially a kind of illuminated encapsulating structure.
Background technology
Flourish along with electronic industry, electronic product is tending towards compact in kenel, functionally then marches toward the R&D direction of high-performance, high function, high speedization gradually.Wherein, light-emittingdiode (Light Emitting Diode, be called for short LED) because having, the life-span is long, volume is little, high vibration strength and the advantage such as power consumption is low, therefore be widely used in the electronic product of irradiation demand, therefore, the application in industrial, various electronic product, life household electrical appliances is increasingly universal.
Fig. 1 is the generalized section disclosing a kind of existing LED encapsulation structure 1.As shown in Figure 1, this LED encapsulation structure 1 comprises: a substrate 10, Copper Foil 11, transparency conducting layer 12, transparent insulating layer 13, LED Chips for Communication 14 and reflector 15.
Described substrate 10 has one for the opening 100 of this LED Chips for Communication 14 accommodating, and it is polyimide (Polyimide, be called for short PI) or polyethylene terephthalate (Polyethylene Terephthalate, be called for short PET) material, using the base material as the Double side soft circuit board generally commonly used, and there is resistance light function.
Described Copper Foil 11 is located on upper and lower surperficial 10a, the 10b of this substrate 10, and can be designed with patterned circuit on demand.
Described LED Chips for Communication 14 is rectilinear LED, and its upper and lower side has anode (anode) 140 and negative electrode (cathode) 141 respectively.
Described transparency conducting layer 12 is incorporated on this Copper Foil 11 by the insulating cement material 120 of such as double faced adhesive tape, its material is as tin indium oxide (ITO), aluminum zinc oxide (AZO) or indium zinc oxide (IZO) etc., and circuit pattern can be produced by patterning process, to be electrically connected anode 140 and the negative electrode 141 of this LED Chips for Communication 14 by elargol 16.
Described transparent insulating layer 13 is located on this transparency conducting layer 12, and its material is macromolecule perspex, as PET or cyclic olefin copolymer (cycloolefin copolymer is called for short COC).
Described reflector 15 is located on the transparent insulating layer 13 on the lower surface 10b of this substrate 10, and its material has high reflecting rate, as aluminium, copper, gold, silver etc.
But, in existing LED encapsulation structure 1, need be formed on transparent insulating layer 13 with the transparency conducting layer 12 of such as tin indium oxide (ITO), and this transparency conducting layer 12 is high with cost of manufacture with the Master Cost of this transparent insulating layer 13, the cost of manufacture of this LED encapsulation structure 1 is caused to be difficult to reduction.
Therefore, how to overcome the problems of the prior art, become the problem of desiring most ardently solution at present in fact.
Utility model content
In view of the disappearance of above-mentioned prior art, the utility model provides a kind of illuminated encapsulating structure, significantly can reduce integral thickness.
Illuminated encapsulating structure of the present utility model comprises: welding resisting layer; Metal level, it is located in this welding resisting layer; Light-emitting component, it has the first relative side and the second side, and this first side combines by electric conductor and is electrically connected on this metal level; And dielectric, it has relative first surface and second surface, and this first surface and this welding resisting layer phase pressing, and this light-emitting component is embedded in this dielectric.
In aforesaid illuminated encapsulating structure, this metal level is line layer, aluminium lamination or layers of copper.
In aforesaid illuminated encapsulating structure, this electric conductor is elargol, UV cured glue, anisotropic conductive film, solder alloy, lead-free solder or eutectic solder institute of Sillim former.
In aforesaid illuminated encapsulating structure, the second surface of this dielectric also forms another metal level.Such as, the surface of this another metal level also forms another welding resisting layer.
In aforesaid illuminated encapsulating structure, the LED encapsulation piece that this light-emitting component is light-emittingdiode (LED) crystal grain or has encapsulated.
In aforesaid illuminated encapsulating structure, this dielectric is soft or hard printed circuit board base material institute former.
As from the foregoing, illuminated encapsulating structure of the present utility model, mainly be formed in this welding resisting layer by by this metal level, this dielectric of pressing and this welding resisting layer again, thus without the need to making existing transparency conducting layer (as processing procedure that ITO connects up), therefore compared to prior art, illuminated encapsulating structure of the present utility model significantly can reduce cost of manufacture.
Accompanying drawing explanation
Fig. 1 is the profile of existing LED encapsulation structure;
Fig. 2 is the generalized section of the first embodiment of illuminated encapsulating structure of the present utility model;
Fig. 2 ' is the generalized section of the second embodiment of illuminated encapsulating structure of the present utility model; And
Fig. 3 is the floor map that illuminated encapsulating structure of the present utility model comprises multiple light-emitting component.
Symbol description
1 LED encapsulation structure
10 substrates
10a upper surface
10b lower surface
100 openings
11 Copper Foils
12 transparency conducting layers
120 insulating cement materials
13 transparent insulating layers
14 LED Chips for Communication
140 anodes
141 negative electrodes
15,25 reflector
16 elargol
2,2 ' illuminated encapsulating structure
20 dielectrics
20a first surface
20b second surface
200 conducting posts
21a, 21b metal level
21b ' line layer
23a, 23b welding resisting layer
230 perforates
24,24 ' light-emitting component
24a first side
24b second side
240,240 ' first electrode
241,241 ' second electrode
26,26 ' electric conductor
27 surface-treated layers.
Embodiment
By particular specific embodiment, execution mode of the present utility model is described below, the personage being familiar with this skill can understand other advantages of the present utility model and effect easily by content disclosed in the present specification.
Notice, structure, ratio, size etc. that this specification institute accompanying drawings illustrates, content all only for coordinating specification to disclose, for the understanding of personage and the reading of being familiar with this skill, be not intended to limit the enforceable qualifications of the utility model, therefore the not technical essential meaning of tool, the adjustment of the modification of any structure, the change of proportionate relationship or size, do not affecting under effect that the utility model can produce and the object that can reach, still all should drop on technology contents that the utility model discloses and obtain in the scope that can contain.Simultaneously, quote in this specification as " on ", " first ", the term such as " second " and " ", be also only be convenient to describe understand, but not for limiting the enforceable scope of the utility model, the change of its relativeness or adjustment, under changing technology contents without essence, when being also considered as the enforceable category of the utility model.
Fig. 2 is the generalized section of the first embodiment of illuminated encapsulating structure 2 of the present utility model.
As shown in Figure 2, this illuminated encapsulating structure 2 comprises: dielectric 20, metal level 21a, a patterned anti-soldering layer 23a and a light-emitting component 24.
Described patterned anti-soldering layer 23a is the welding resisting layer as transparent, green, black or other color.
Described metal level 21a is embedded in this welding resisting layer 23a, and wherein, this metal level 21a makes in electro-coppering mode, and can form patterned line layer.
In the present embodiment, this welding resisting layer 23a is formed with multiple perforate 230, to make the part surface of this metal level 21a expose to those perforates 230, for being formed on the metal level 21a of surface-treated layer 27 in this perforate 230.
In addition, in time producing, this metal level 21a may extend to edge or the dead zone in justifying face (panel), as shown in Figure 3, through patterned anti-soldering layer opening to form the end points of other element external (as electric capacity, inductance, resistance etc.).
Described light-emitting component 24 is embedded in this dielectric 20.In the present embodiment; this light-emitting component 24 is (face up) LED that faces up of horizontal; it has the first relative side 24a and the second side 24b; and this first side 24a has the first electrode 240 and the second electrode 241; wherein, this light-emitting component 24 LED encapsulation piece of can be LED grain or having encapsulated.
In addition, this first electrode 240 can be male or female, and the polarity that this second electrode 241 is contrary with this first electrode 240.
Again, the first electrode 240 of this light-emitting component 24 and the second electrode 241 are incorporated on this metal level 21a by electric conductor 26, and by the wires design of this metal level 21a, are beneficial to the product simultaneously making multiple light-emitting component 24, as shown in Figure 3.
In addition, this electric conductor 26 is such as elargol, UV cured glue (being commonly called as UV glue), anisotropic conductive film (Anisotropic Conductive Film is called for short ACF), solder alloy, lead-free solder or Sillim's eutectic solder.
Described dielectric 20 has relative first surface 20a and second surface 20b, and this light-emitting component 24 is embedded in this dielectric 20, and make this first surface 20a and the pressing of this welding resisting layer 23a phase, fit on the first surface 20a of this dielectric 20 to make this metal level 21a part.
In the present embodiment, this dielectric 20 is soft or hard printed circuit board base material, as the dielectric material of glue impregnation fiberglass woven cloth (prepreg), it is made up of multilayer dielectric sheet, and at least one deck dielectric piece can have opening with this light-emitting component 24 accommodating.The color of dielectric 20 can be need to select transparent, black, white, yellow or other colors.
Therefore, in time making this illuminated encapsulating structure 2, first this metal level 21a is formed in this welding resisting layer 23a, this light-emitting component 24 is set again on this metal level 21a, this dielectric 20 of pressing afterwards and this welding resisting layer 23a, this metal level 21a is located between the first surface 20a of this welding resisting layer 23a and this dielectric 20, and this light-emitting component 24 is embedded in this dielectric 20.
In successive process, also alternative design on the second surface 20b of this dielectric 20, as another metal level of pressing one 21b, then form another patterned anti-soldering layer 23b on this another metal level 21b, make this another metal level 21b hide the second side 24b of this light-emitting component 24.Wherein, this another metal level 21b can be designed to heat dissipating layer, line layer, stressor layers or screen etc. on demand.
Fig. 2 ' is the generalized section of the second embodiment of illuminated encapsulating structure 2 ' of the present utility model.The difference of the present embodiment and the first embodiment is only the structure of light-emitting component 24 ', and other structure is roughly the same, therefore below in detail deviation is described in detail, and repeats no more and exist together mutually.
As shown in Fig. 2 ', described light-emitting component 24 ' is rectilinear LED, and it has the first relative side 24a and the second side 24b, and this first side 24a and the second side 24b has the first electrode 240 ' and the second electrode 241 ' respectively.
In addition, the first electrode 240 of this light-emitting component 24 ' combines by electric conductor 26 and is electrically connected on this metal level 21a.
Therefore, in time making this illuminated encapsulating structure 2 ', first this metal level 21a is formed in this patterned anti-soldering layer 23a, this light-emitting component 24 ' is set again on this metal level 21a, this dielectric 20 of pressing afterwards and this patterned anti-soldering layer 23a, this metal level 21a is located between the first surface 20a of this patterned anti-soldering layer 23a and this dielectric 20, and this light-emitting component 24 ' is embedded in this dielectric 20.
In the present embodiment, this dielectric 20 can form groove (figure slightly) on demand, for burying this light-emitting component 24 ' underground in wherein.
Again, the second surface 20b of this dielectric 20 needs another metal level of pressing, again by laser perforation means to form blind hole on the second surface 20b of this dielectric 20, carry out patterning process again, this another metal level is made to form line layer 21b ', and electric conductor 26 ' is formed in this blind hole, be electrically connected this second electrode 241 ' to make this line layer 21b ' by this electric conductor 26 '.Afterwards, form another patterned anti-soldering layer 23b on this line layer 21b ', make this another patterned anti-soldering layer 23b hide the second side 24b of this light-emitting component 24 '.Particularly, be make this line layer 21b ' and electric conductor 26 ' in electro-coppering mode.
In addition, described illuminated encapsulating structure 2 ' also comprises a reflector 25, above its second surface 20b being located at this dielectric 20 (as being incorporated on this another welding resisting layer 23b by adhesion material).But this reflector 25 alternative forms (namely not essential), and this reflector 25 is of a great variety, and there is no particular restriction.
In sum, illuminated encapsulating structure 2 of the present utility model, 2 ', main by first this metal level 21a being formed in this patterned anti-soldering layer 23a, again this patterned anti-soldering layer 23a is pressed on this dielectric 20 together with this metal level 21a in the lump, general printed circuit board circuitry processing procedure thus can be adopted to make this metal level 21a and this welding resisting layer 23a, therefore compared to the processing procedure of existing transparency conducting layer, illuminated encapsulating structure 2,2 ' of the present utility model significantly can reduce cost of manufacture.
In addition, the material of this welding resisting layer 23a is because of transparent without the need to limiting the use of, therefore the incorporating selectively of this illuminated encapsulating structure 2,2 ' is increased.
Again, illuminated encapsulating structure 2,2 ' of the present utility model uses general circuit plate pressure programming, therefore can reduce the integral thickness of this illuminated encapsulating structure 2,2 '.
In addition, the more existing LED encapsulation structure of air-tightness of illuminated encapsulating structure 2,2 ' of the present utility model is better, is beneficial to this illuminated encapsulating structure 2,2 ' to be applied to open air property product.
Above-described embodiment only for illustrative principle of the present utility model and effect thereof, but not for limiting the utility model.Any personage haveing the knack of this skill all without prejudice under spirit of the present utility model and category, can modify to above-described embodiment.Therefore rights protection scope of the present utility model, should listed by claims.
Claims (8)
1. an illuminated encapsulating structure, is characterized by, and this structure comprises:
Welding resisting layer;
Metal level, it is formed in this welding resisting layer;
Light-emitting component, it has the first relative side and the second side, and this first side combines by electric conductor and is electrically connected on this metal level; And
Dielectric, it has relative first surface and second surface, and this first surface and this welding resisting layer phase pressing, this light-emitting component is embedded in this dielectric.
2. illuminated encapsulating structure as claimed in claim 1, is characterized by, and this metal level is line layer.
3. illuminated encapsulating structure as claimed in claim 1, is characterized by, and this metal level is aluminium lamination or layers of copper.
4. illuminated encapsulating structure as claimed in claim 1, is characterized by, and this electric conductor is elargol, UV cured glue, anisotropic conductive film, solder alloy, lead-free solder or eutectic solder institute of Sillim former.
5. illuminated encapsulating structure as claimed in claim 1, is characterized by, and the second surface of this dielectric also forms another metal level.
6. illuminated encapsulating structure as claimed in claim 5, is characterized by, and the complex on the surface of this another metal level becomes another welding resisting layer.
7. illuminated encapsulating structure as claimed in claim 1, is characterized by, the LED encapsulation piece that this light-emitting component is LED grain or has encapsulated.
8. illuminated encapsulating structure as claimed in claim 1, is characterized by, and this dielectric is soft or hard printed circuit board base material institute former.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104204911U TWM505061U (en) | 2015-04-01 | 2015-04-01 | Light-emitting type package structure |
| TW104204911 | 2015-04-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204558531U true CN204558531U (en) | 2015-08-12 |
Family
ID=53833611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520248979.4U Active CN204558531U (en) | 2015-04-01 | 2015-04-23 | Light-emitting type packaging structure |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN204558531U (en) |
| TW (1) | TWM505061U (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI673784B (en) * | 2018-11-28 | 2019-10-01 | 同泰電子科技股份有限公司 | Method for forming openings on an led carrier board |
-
2015
- 2015-04-01 TW TW104204911U patent/TWM505061U/en unknown
- 2015-04-23 CN CN201520248979.4U patent/CN204558531U/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TWM505061U (en) | 2015-07-11 |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |