CN204516767U - Imageing sensor - Google Patents
Imageing sensor Download PDFInfo
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- CN204516767U CN204516767U CN201520109337.6U CN201520109337U CN204516767U CN 204516767 U CN204516767 U CN 204516767U CN 201520109337 U CN201520109337 U CN 201520109337U CN 204516767 U CN204516767 U CN 204516767U
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Abstract
The utility model provides a kind of imageing sensor, comprising: device layer, and it has relative first surface and second, and incident light enters described device layer from first surface; Be positioned at the dielectric layer on second of described device layer, described dielectric layer has high reverse--bias characteristic.Imageing sensor of the present utility model, by the dielectric layer with high reverse--bias characteristic, the light transmitted from device layer is reflected back into device layer, it is made again to be absorbed by sensor devices, thus improve absorption efficiency and the luminous sensitivity of long wavelength light, this makes full use of long wavelength light to hope, and to carry out the large pixel supervising device of IMAQ especially favourable, reduce the chance that transmitted ray is reflected to other pixels simultaneously, thus the signal cross-talk reduced between neighbor, improve the imaging effect of imageing sensor.
Description
Technical field
The utility model relates to a kind of imageing sensor.
Background technology
Fig. 1 illustrates the structure of traditional front illuminated image sensor, as shown in the dotted line with arrow in figure, incident light is after microlens layer is assembled and filter membranous layer filters, first then enter device layer 100 through metal interconnecting layer 104, sensor devices 103(such as photodiode through in device layer 100) absorb after be converted into the signal of telecommunication, and the circuit formed by metal interconnecting layer 104 derive.Due to blocking of metal interconnecting layer 104, some light is reflected or absorbed in metal interconnecting layer 104, causes the loss of incident light, decreases the sensitive volume of sensor devices 103, and then the imaging effect of effect diagram image-position sensor.
Propose back side illumination image sensor for this reason, as shown in Figure 2, incident light is after microlens layer is assembled and filter membranous layer filters, directly enter device layer 200 thus absorbed by sensor devices 203, thus do not affect by being in the light of metal interconnecting layer 204, decrease the loss of incident light, add the sensitive volume of sensor devices 203, significantly improve the imaging effect under low-light conditions.But, thickness due to usual device layer 200 is all smaller (2-3 μm), can not fully absorb some long wavelength lights, thus cause the luminous sensitivity of long wavelength light lower, and this part long wavelength light do not absorbed is reflected back toward device layer 200 again after penetrating device layer 200 in metal interconnecting layer 204, due to the restriction of technique, inevitably gap is there is between metal interconnecting layer 204 and device layer 200, the direction of reverberation is difficult to control, therefore the sensor devices 203 of neighbor is easily entered, cause the crosstalk of signal between neighbor, image sharpness is finally caused to decline, degradation.
Utility model content
The purpose of this utility model is to provide a kind of imageing sensor, to improve the luminous sensitivity of long wavelength light, reduces the signal cross-talk between neighbor, improves the imaging effect of imageing sensor.
For solving the problem, the utility model adopts following technical scheme:
A kind of imageing sensor, comprising: device layer, it has relative first surface and second, and incident light enters described device layer from first surface; Be positioned at the dielectric layer on second of described device layer, described dielectric layer has high reverse--bias characteristic.
Preferably, described dielectric layer adjoins second of described device layer.
Preferably, described dielectric layer comprises and has different refractivity and alternately stacked first medium layer and second dielectric layer, and wherein the thickness of each dielectric layer equals (2j+1)/4 times of the wavelength of incident light in this dielectric layer, j=0,1,2 ...
Preferably, the refractive index of described first medium layer is greater than the refractive index of described second dielectric layer, more than the number of plies of described second dielectric layer 1 layer of the number of plies of described first medium layer.
Preferably, described first medium layer is silicon nitride layer, and described second dielectric layer is silicon oxide layer.
Preferably, described first medium layer is silicon oxynitride layer, and described second dielectric layer is silicon oxide layer.
Preferably, total number of plies of described first medium layer and described second dielectric layer is odd-level.
Preferably, the reflectivity of described dielectric layer is at least 90%.
Preferably, described imageing sensor also comprises the metal interconnecting layer be positioned on second of described device layer.
Preferably, described imageing sensor also comprises the metal interconnecting layer on the first surface being positioned at described device layer.
Compared with prior art, the technical solution of the utility model has the following advantages:
Imageing sensor of the present utility model, by the dielectric layer with high reverse--bias characteristic, the light transmitted from device layer is reflected back into device layer, it is made again to be absorbed by sensor devices, thus improve absorption efficiency and the luminous sensitivity of long wavelength light, this makes full use of long wavelength light to hope, and to carry out the large pixel supervising device of IMAQ especially favourable, reduce the chance that transmitted ray is reflected to other pixels simultaneously, thus the signal cross-talk reduced between neighbor, improve the imaging effect of imageing sensor.
Accompanying drawing explanation
By Figure of description and subsequently together with Figure of description for illustration of the embodiment of some principle of the utility model, the further feature that the utility model has and advantage will become clear or more specifically be illustrated.Wherein:
Fig. 1 is the structural representation of the front illuminated image sensor of prior art;
Fig. 2 is the structural representation of the back side illumination image sensor of prior art;
Fig. 3 is the structural representation of the imageing sensor of the utility model first embodiment;
Fig. 4 is the structural representation of the imageing sensor dielectric layer of the utility model first embodiment;
Fig. 5 is total number of plies of the imageing sensor dielectric layer of the utility model first embodiment and the graph of relation of reflectivity;
Fig. 6 is the structural representation of the imageing sensor of the utility model second embodiment;
Fig. 7 is the structural representation of the imageing sensor of the utility model the 3rd embodiment;
Fig. 8 is the structural representation of the imageing sensor of the utility model the 4th embodiment.
Embodiment
For solving the problems of the technologies described above, the utility model provides a kind of imageing sensor, by the dielectric layer with high reverse--bias characteristic, the light transmitted from device layer is reflected back into device layer, it is made again to be absorbed by sensor devices, thus improve absorption efficiency and the luminous sensitivity of long wavelength light, this makes full use of long wavelength light to hope, and to carry out the large pixel supervising device of IMAQ especially favourable, reduce the chance that transmitted ray is reflected to other pixels simultaneously, thus the signal cross-talk reduced between neighbor, improve the imaging effect of imageing sensor.
For enabling above-mentioned purpose of the present utility model, feature and advantage more become apparent, and are described in detail specific embodiment of the utility model below in conjunction with accompanying drawing.
Fig. 3 illustrates the imageing sensor according to the utility model first embodiment.The imageing sensor of the present embodiment is back side illumination image sensor, and it comprises device layer 300, is formed with three sensor devices 303 shown in multiple sensor devices 303, figure in this device layer 300.Device layer 300 has relative first surface 301 and the second face 302, and incident light enters device layer 300 from first surface 301, and metal interconnecting layer 304 is positioned on the second face 302 of device layer 300.
With existing back side illumination image sensor unlike, the back side illumination image sensor of the present embodiment also comprises the dielectric layer 305 be positioned on the second face 302 of device layer 300, whole second face 302 of dielectric layer 305 covering device layer 300.Because dielectric layer 305 has high reverse--bias characteristic, the light transmitted from device layer 300 can be reflected back into device layer 300, it is made again to be absorbed by sensor devices 303, thus improve absorption efficiency and the luminous sensitivity of long wavelength light, this makes full use of long wavelength light to hope, and to carry out the large pixel supervising device of IMAQ especially favourable, reduce the chance that transmitted ray is reflected to other pixels simultaneously, thus the signal cross-talk reduced between neighbor, improve the imaging effect of imageing sensor.
The manufacture method of the back side illumination image sensor of the present embodiment, at least comprises the steps:
Sensor devices 303 is formed in device layer (device wafers) 300;
Second face 302 of device layer 300 forms the dielectric layer 305 with high reverse--bias characteristic, whole second face 302 of dielectric layer 305 covering device layer 300;
Dielectric layer 305 is formed metal interconnecting layer 304;
From the second face 302 and supporting wafer 306 bonding of device layer 300;
Thinning from the first surface 301 of device layer 300;
The first surface 301 of device layer 300 forms filter membranous layer and microlens layer.
Preferably, the second face 302 of dielectric layer 305 adjacent device layer 300 is arranged.Such as, form sensor devices 303 in device layer 300 after, directly on the second face 302 of device 300, deposition forms the dielectric layer 305 with high reverse--bias characteristic, make the sensor devices 303 through the rightmost side in a certain sensor devices 303(such as Fig. 3) light reflected back in this sensor devices 303 by dielectric layer 305 at once, reduce the chance that transmitted ray is reflected to other pixels.
Preferably, the structure of dielectric layer 305 as shown in Figure 4, it comprises and has different refractivity and alternately stacked first medium layer A and second dielectric layer B, such as replace stacked silicon nitride layer and silicon oxide layer, or alternately stacked silicon oxynitride layer and silicon oxide layer, they can use CVD(chemical vapour deposition (CVD)) mode alternating deposit formed.Wherein the thickness Dx of each dielectric layer equals (2j+1)/4 times of the wavelength of incident light in this dielectric layer, j=0,1,2 ...According to the refracting characteristic of light, such one group of all-dielectric multilayer-film can realize very high reflectivity, the most of light transmitted from device layer is reflected back into device layer.
With first medium layer A for silicon nitride layer, second dielectric layer B is silicon oxide layer, and incident light is green glow is example, and green glow refractive index is in the silicon nitride layer n
a=2.0, the refractive index in silicon oxide layer is n
b=1.46, the relation of the total number of plies and reflectivity that obtain dielectric layer by simulation calculation is as shown in table 1 and Fig. 5.Wherein, when total number of plies is odd-level, many 1 layer of the number of plies of the silicon oxide layer that the number of plies of the silicon nitride layer that reflectivity is higher is lower than reflectivity.From the data of table 1 and Fig. 5, reflectivity when reflectivity when total number of plies is odd-level is close even level apparently higher than total number of plies.Particularly, when total number of plies is the odd-level of more than 13 layers, the reflectivity of dielectric layer is at least more than 90%.
Table 1
| Total number of plies | Reflectivity |
| 1 | 4.60% |
| 2 | 13.00% |
| 3 | 17.90% |
| 4 | 3.90% |
| 5 | 42% |
| 6 | 15% |
| 7 | 64.20% |
| 8 | 38.30% |
| 9 | 78.30% |
| 10 | 59.40% |
| 11 | 88.60% |
| 12 | 76.50% |
| 13 | 93.80% |
| 14 | 87.30% |
| 15 | 96.40% |
| 16 | 92.70% |
| 17 | 98.30% |
| 18 | 96.30% |
| 19 | 98.90% |
| 20 | 97.80% |
Fig. 6 illustrates the imageing sensor according to the utility model second embodiment.The imageing sensor of the present embodiment is also back side illumination image sensor, and it comprises device layer 400, is formed with three sensor devices 403 shown in multiple sensor devices 403, figure in this device layer 400.Device layer 400 has relative first surface 401 and the second face 402, and incident light enters device layer 400 from first surface 401, and metal interconnecting layer 404 is positioned on the second face 402 of device layer 400.
Identical with the first embodiment, the back side illumination image sensor of the present embodiment also comprises the dielectric layer 405 be positioned on the second face 402 of device layer 400.With whole second face 402 of the first embodiment unlike, the dielectric layer 405 in the present embodiment not covering device layer 400, and only cover the subregion corresponding with sensor devices 403 in the second face 402.Because dielectric layer 405 has high reverse--bias characteristic, the light transmitted from device layer 400 can be reflected back into device layer 400, it is made again to be absorbed by sensor devices 403, thus improve absorption efficiency and the luminous sensitivity of long wavelength light, this makes full use of long wavelength light to hope, and to carry out the large pixel supervising device of IMAQ especially favourable, reduce the chance that transmitted ray is reflected to other pixels simultaneously, thus the signal cross-talk reduced between neighbor, improve the imaging effect of imageing sensor.
The manufacture method of the back side illumination image sensor of the present embodiment, at least comprises the steps:
Sensor devices 403 is formed in device layer (device wafers) 400;
Second face 402 of device layer 400 is formed the dielectric layer 405 with high reverse--bias characteristic, and dielectric layer 405 covers the subregion corresponding with sensor devices 403 in the second face 402;
Dielectric layer 405 is formed metal interconnecting layer 404;
From the second face 402 and supporting wafer 406 bonding of device layer 400;
Thinning from the first surface 401 of device layer 400;
The first surface 401 of device layer 400 forms filter membranous layer and microlens layer.
Preferably, the second face 402 of dielectric layer 405 adjacent device layer 400 is arranged.Such as, form sensor devices 403 in device layer 400 after, directly on whole second face 402 of device 400, deposition forms the dielectric layer 405 with high reverse--bias characteristic, etching removes the dielectric layer 405 on not corresponding with sensor devices 403 subregion, retain the dielectric layer 405 on the subregion corresponding with sensor devices 403, or cover not corresponding with sensor devices 403 subregion by photoresistance or mask, only on the subregion corresponding with sensor devices 403, deposit the dielectric layer 405 being formed and there is high reverse--bias characteristic, thus form the structure of the subregion corresponding with sensor devices 403 in adjacent second face 402 of dielectric layer 405, make the sensor devices 403 through the rightmost side in a certain sensor devices 403(such as Fig. 6) light reflected back in this sensor devices 403 by dielectric layer 405 at once, reduce the chance that transmitted ray is reflected to other pixels.
Preferably, dielectric layer 405 comprises and has different refractivity and alternately stacked first medium layer A and second dielectric layer B, such as replace stacked silicon nitride layer and silicon oxide layer, or alternately stacked silicon oxynitride layer and silicon oxide layer, they can use CVD(chemical vapour deposition (CVD)) mode alternating deposit formed.Wherein the thickness Dx of each dielectric layer equals (2j+1)/4 times of the wavelength of incident light in this dielectric layer, j=0,1,2 ...According to the refracting characteristic of light, such one group of all-dielectric multilayer-film can realize very high reflectivity, the most of light transmitted from device layer is reflected back into device layer.
Fig. 7 illustrates the imageing sensor according to the utility model the 3rd embodiment.The imageing sensor of the present embodiment is also back side illumination image sensor, and it comprises device layer 500, is formed with three sensor devices 503 shown in multiple sensor devices 503, figure in this device layer 500.Device layer 500 has relative first surface 501 and the second face 502, and incident light enters device layer 500 from first surface 501, and metal interconnecting layer 504 is positioned on the second face 502 of device layer 500.
The back side illumination image sensor of the present embodiment also comprises the dielectric layer 505 be positioned on the second face 502 of device layer 500, whole second face 502 of dielectric layer 505 covering device layer 500.In other embodiments unshowned, dielectric layer 505 also only can cover the subregion corresponding with sensor devices 503 in the second face 502.Because dielectric layer 505 has high reverse--bias characteristic, the light transmitted from device layer 500 can be reflected back into device layer 500, it is made again to be absorbed by sensor devices 503, thus improve absorption efficiency and the luminous sensitivity of long wavelength light, this makes full use of long wavelength light to hope, and to carry out the large pixel supervising device of IMAQ especially favourable, reduce the chance that transmitted ray is reflected to other pixels simultaneously, thus the signal cross-talk reduced between neighbor, improve the imaging effect of imageing sensor.
With first, second embodiment unlike, metal interconnecting layer 504 in the present embodiment is not the rear (namely away from the side of device layer 500) being positioned at dielectric layer 505, but be arranged in dielectric layer 505, dielectric layer 505, while the light transmitted from device layer 500 is reflected back device layer 500, also plays the effect of multiple layer metal in isolating metal interconnection layer 504.
The manufacture method of the back side illumination image sensor of the present embodiment, at least comprises the steps:
Sensor devices 503 is formed in device layer (device wafers) 500;
Second face 502 of device layer 500 is formed the dielectric layer 505 with high reverse--bias characteristic, in dielectric layer 505, is formed with metal interconnecting layer 504;
From the second face 502 and supporting wafer 506 bonding of device layer 500;
Thinning from the first surface 501 of device layer 500;
The first surface 501 of device layer 500 forms filter membranous layer and microlens layer.
Preferably, second face 502 of dielectric layer 505 adjacent device layer 500 is arranged, concrete grammar can see first, second embodiment, to make the sensor devices 503 through the rightmost side in a certain sensor devices 503(such as Fig. 7) light reflected back in this sensor devices 503 by dielectric layer 505 at once, reduce the chance that transmitted ray is reflected to other pixels.
Preferably, dielectric layer 505 comprises and has different refractivity and alternately stacked first medium layer A and second dielectric layer B, such as replace stacked silicon nitride layer and silicon oxide layer, or alternately stacked silicon oxynitride layer and silicon oxide layer, they can use CVD(chemical vapour deposition (CVD)) mode alternating deposit formed.Wherein the thickness Dx of each dielectric layer equals (2j+1)/4 times of the wavelength of incident light in this dielectric layer, j=0,1,2 ...According to the refracting characteristic of light, such one group of all-dielectric multilayer-film can realize very high reflectivity, the most of light transmitted from device layer is reflected back into device layer.
Fig. 8 illustrates the imageing sensor according to the utility model the 4th embodiment.The imageing sensor of the present embodiment is front formula imageing sensor, and it comprises device layer 600, is formed with three sensor devices 603 shown in multiple sensor devices 603, figure in this device layer 600.Device layer 600 has relative first surface 601 and the second face 602, and incident light enters device layer 600 from first surface 601, and metal interconnecting layer 604 is positioned on the first surface 601 of device layer 600.
With existing front illuminated image sensor unlike, the front illuminated image sensor of the present embodiment also comprises the dielectric layer 605 be positioned on the second face 602 of device layer 600, whole second face 602 of dielectric layer 605 covering device layer 600.In other embodiments unshowned, dielectric layer 605 also only can cover the subregion corresponding with sensor devices 603 in the second face 602.Because dielectric layer 605 has high reverse--bias characteristic, the light transmitted from device layer 600 can be reflected back into device layer 600, it is made again to be absorbed by sensor devices 603, thus improve absorption efficiency and the luminous sensitivity of long wavelength light, this makes full use of long wavelength light to hope, and to carry out the large pixel supervising device of IMAQ especially favourable, also reduce the chance that transmitted ray is reflected to other pixels simultaneously, thus the signal cross-talk reduced between neighbor, improve the imaging effect of imageing sensor.
The manufacture method of the front illuminated image sensor of the present embodiment, at least comprises the steps:
Supporting wafer 606 forms the dielectric layer 605 with high reverse--bias characteristic;
From with the one side of dielectric layer 605 and the second face 602 bonding of device layer (device wafers) 600;
Thinning from the first surface 601 of device layer 600;
Sensor devices 603 is formed in device layer 600;
The first surface 601 of device layer 600 forms metal interconnecting layer 604;
Metal interconnecting layer 604 is formed filter membranous layer and microlens layer.
Preferably, second face 602 of dielectric layer 605 adjacent device layer 600 is arranged, concrete grammar can see first, second embodiment, to make the sensor devices 603 through the rightmost side in a certain sensor devices 603(such as Fig. 8) light reflected back in this sensor devices 603 by dielectric layer 605 at once, reduce the chance that transmitted ray is reflected to other pixels.
Preferably, dielectric layer 605 comprises and has different refractivity and alternately stacked first medium layer A and second dielectric layer B, such as replace stacked silicon nitride layer and silicon oxide layer, or alternately stacked silicon oxynitride layer and silicon oxide layer, they can use CVD(chemical vapour deposition (CVD)) mode alternating deposit formed.Wherein the thickness Dx of each dielectric layer equals (2j+1)/4 times of the wavelength of incident light in this dielectric layer, j=0,1,2 ...According to the refracting characteristic of light, such one group of all-dielectric multilayer-film can realize very high reflectivity, the most of light transmitted from device layer is reflected back into device layer.
Above-described embodiment is for illustrative principle of the present utility model and effect thereof, but the utility model is not limited to above-mentioned execution mode.Those skilled in the art all without prejudice under spirit of the present utility model and category, in claims, can modify to above-described embodiment.Therefore protection range of the present utility model, should cover as claims of the present utility model.
Claims (10)
1. an imageing sensor, is characterized in that, comprising:
Device layer, it has relative first surface and second, and incident light enters described device layer from first surface;
Be positioned at the dielectric layer on second of described device layer, described dielectric layer has high reverse--bias characteristic.
2. imageing sensor as claimed in claim 1, it is characterized in that, described dielectric layer adjoins second of described device layer.
3. imageing sensor as claimed in claim 1 or 2, it is characterized in that, described dielectric layer comprises and has different refractivity and alternately stacked first medium layer and second dielectric layer, wherein the thickness of each dielectric layer equals (2j+1)/4 times of the wavelength of incident light in this dielectric layer, j=0,1,2 ...
4. imageing sensor as claimed in claim 3, it is characterized in that, the refractive index of described first medium layer is greater than the refractive index of described second dielectric layer, more than the number of plies of described second dielectric layer 1 layer of the number of plies of described first medium layer.
5. imageing sensor as claimed in claim 3, it is characterized in that, described first medium layer is silicon nitride layer, and described second dielectric layer is silicon oxide layer.
6. imageing sensor as claimed in claim 3, it is characterized in that, described first medium layer is silicon oxynitride layer, and described second dielectric layer is silicon oxide layer.
7. imageing sensor as claimed in claim 3, it is characterized in that, total number of plies of described first medium layer and described second dielectric layer is odd-level.
8. imageing sensor as claimed in claim 1 or 2, it is characterized in that, the reflectivity of described dielectric layer is at least 90%.
9. imageing sensor as claimed in claim 1 or 2, is characterized in that, also comprise the metal interconnecting layer be positioned on second of described device layer.
10. imageing sensor as claimed in claim 1 or 2, is characterized in that, also comprise the metal interconnecting layer on the first surface being positioned at described device layer.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106887440A (en) * | 2015-12-15 | 2017-06-23 | 格科微电子（上海）有限公司 | Metal interconnection Rotating fields of imageing sensor and forming method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106887440A (en) * | 2015-12-15 | 2017-06-23 | 格科微电子（上海）有限公司 | Metal interconnection Rotating fields of imageing sensor and forming method thereof |
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Effective date of registration: 20170918 Address after: Jiaxing City, Zhejiang province 314000 Jiashan Huimin street 1 Building 2 Taisheng Road No. 111 building 201 room Patentee after: Galaxycore Microelectronics (Zhejiang) Co., Ltd. Address before: 201203 floor, building No. 560, Pudong New Area, Shanghai, summer road, No. 2, building 11 Patentee before: Galaxycore Microelectronics (Shanghai) Co., Ltd. |