CN204516743U - A kind of semiconductor package of low temperature antidetonation - Google Patents
A kind of semiconductor package of low temperature antidetonation Download PDFInfo
- Publication number
- CN204516743U CN204516743U CN201520226229.7U CN201520226229U CN204516743U CN 204516743 U CN204516743 U CN 204516743U CN 201520226229 U CN201520226229 U CN 201520226229U CN 204516743 U CN204516743 U CN 204516743U
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- China
- Prior art keywords
- layer
- low temperature
- elastic sheet
- semiconductor package
- encapsulated layer
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Abstract
The utility model discloses a kind of semiconductor package of low temperature antidetonation, comprise functional device, encapsulated layer and cooling heat-transfer device, scheme of the present utility model can make chip not bear the direct stress of encapsulated layer, achieve the ability that chip can bear high shake stress, and dispel the heat because of the assistance of fin, and be equipped with the quick conductive of elastic heat conducting colloid, ensure that semiconductor product is in lower operation temperature rise.
Description
Technical field
The utility model relates to technical field of semiconductor encapsulation, particularly relates to a kind of semiconductor package of low temperature antidetonation.
Technical background
In semiconductor packaging, some semiconductor chip is still in order to meet user demand, and the power of its semiconductor chip is in the renewal progress along with technology of larger state, particularly semiconductor chip, more and more less what become gradually, with meeting the market requirement.But, however, the volume of some high-power chip is still relatively large, and its inertia is also larger, the impact of occasion on the use safety of chip shaken at height is obvious, and progressively diminishing of chip also brings certain negative effect to natural heat dissipation simultaneously.Therefore, need can to keep when providing a kind of product to run low-temperature condition and can the semiconductor package of height antidetonation.
Summary of the invention
The utility model overcomes deficiency of the prior art, provides a kind of semiconductor package of low temperature antidetonation.
In order to solve the problems of the technologies described above, the utility model is achieved through the following technical solutions: a kind of semiconductor package of low temperature antidetonation, comprise functional device, encapsulated layer and cooling heat-transfer device, described encapsulated layer parcel covering function device, described cooling heat-transfer device is arranged on encapsulated layer surface, described functional device comprises large area contact, semiconductor device, Minimal Tension electroconductive elastic sheet and elastic heat conducting colloid, described elastic heat conducting colloid parcel covers large area contact, semiconductor device and Minimal Tension electroconductive elastic sheet, described large area contact is electrically connected on semiconductor device, described semiconductor device is electrically connected on Minimal Tension electroconductive elastic sheet, described large area contact and Minimal Tension electroconductive elastic sheet are all electrically connected to the pin outlet on encapsulated layer, described encapsulated layer comprises first ring epoxy layer, carbon fiber layer, electro-magnetic screen layer, second epoxy resin layer, described second epoxy resin layer parcel covers electro-magnetic screen layer, described electro-magnetic screen layer parcel coated carbon fibrage, described carbon fiber layer parcel covers first ring epoxy layer.
As preferably, described cooling heat-transfer device is fin.
As preferably, described fin quantity is 2, is separately positioned on encapsulated layer without the surface of pin to be arranged symmetrically.
As preferably, described Minimal Tension electroconductive elastic sheet is U-shaped electroconductive elastic sheet.
As preferably, described electro-magnetic screen layer is Nano Silver bisque.
Compared with prior art, the utility model has the advantages that: the existence of Minimal Tension electroconductive elastic sheet and elastic heat conducting colloid, soft between semiconductor chip with encapsulated layer is connected, chip does not bear the direct stress of encapsulated layer, there is provided good guarantee to chip security, achieve the ability that chip can bear high shake stress; Product can be made not easily to occur the phenomenon ftractureed owing to introducing carbon fiber layer at encapsulated layer; Owing to having electro-magnetic screen layer in encapsulated layer, can make product under the operating mode of complexity, inhibit the mutual electromagnetic of components and parts to affect; Because the assistance of fin is dispelled the heat, and the quick conductive being equipped with elastic heat conducting colloid can ensure that semiconductor product can be in lower operation temperature rise, extends the useful life of product.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model embodiment.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the utility model is described in further detail.
As shown in Figure 1, a kind of semiconductor package of low temperature antidetonation, comprise functional device, encapsulated layer and fin 11, described encapsulated layer parcel covering function device, described functional device comprises large area contact 5, semiconductor device 10, Minimal Tension U-shaped electroconductive elastic sheet 8 and elastic heat conducting colloid 9, described elastic heat conducting colloid 9 wraps up and covers large area contact 5, semiconductor device 10 and Minimal Tension U-shaped electroconductive elastic sheet 8, described large area contact 5 is electrically connected on semiconductor device 10, described semiconductor device 10 is electrically connected on Minimal Tension U-shaped electroconductive elastic sheet 8, described large area contact 5 is electrically connected the first pin outlet 6, described Minimal Tension U-shaped electroconductive elastic sheet 8 is electrically connected the second pin outlet 7, described encapsulated layer comprises first ring epoxy layer 4, carbon fiber layer 3, Nano Silver bisque 2, second epoxy resin layer 1, described second epoxy resin layer 1 wraps up and covers Nano Silver bisque 2, described Nano Silver bisque 2 wraps up coated carbon fibrage 3, described carbon fiber layer 3 wraps up and covers first ring epoxy layer 4, described fin 11 quantity is 2, be separately positioned on the second epoxy resin layer about 1 two side to be arranged symmetrically.
During utility model works, Minimal Tension U-shaped electroconductive elastic sheet 8 can keep large area contact 5, certain pressure is formed between semiconductor device 10 and Minimal Tension U-shaped electroconductive elastic sheet 8, ensured large area contact 5 can when height shakes effective electrical contact semiconductor device 10, and be that contact is connected between large area contact 5 with semiconductor device 10, and Minimal Tension U-shaped electroconductive elastic sheet 8 has certain elasticity, semiconductor device 10 alleviates the hard stress from conduction connection aspect, elastic heat conducting colloid 9 can fully be alleviated from the stress of encapsulated layer to semiconductor device 10 surface again, thus realize semiconductor device 10 when height shakes, reduce failure rate, extend the object in product useful life, simultaneously the heat-conducting effect that possesses of elastic heat conducting colloid 9 is relatively good, chip heat can be accelerated and be delivered to surface, dispelled the heat by the assistance of fin 11 again, can effectively keep running low-temperature-rise, carbon fiber layer 3 in the utility model serves the effect strengthening encapsulated layer, the structural strength of efficient hardening product encapsulated layer, product can be made not easily to occur the phenomenon ftractureed, the electromagnetic interference that Nano Silver bisque 2 can make the utility model can suppress between components and parts under the operating mode of complexity.
Except the above embodiments, other execution modes do not stated also should within protection range of the present utility model.Specific embodiment as herein described is only to the explanation for example of the utility model spirit, the utility model person of ordinary skill in the field can make various amendment or supplements or adopt similar mode to substitute to described specific embodiment, but can't depart from spirit of the present utility model or surmount the scope that appended claims defines.Although be described through specific term herein, but do not get rid of the possibility using other terms, use these terms to be only used to describe and explain essence of the present utility model easily, the restriction that they are construed to any one additional is all contrary with the utility model spirit.
Claims (5)
1. the semiconductor package of a low temperature antidetonation, it is characterized in that, comprise functional device, encapsulated layer and cooling heat-transfer device, described encapsulated layer parcel covering function device, described cooling heat-transfer device is arranged on encapsulated layer surface, described functional device comprises large area contact, semiconductor device, Minimal Tension electroconductive elastic sheet and elastic heat conducting colloid, described elastic heat conducting colloid parcel covers large area contact, semiconductor device and Minimal Tension electroconductive elastic sheet, described large area contact is electrically connected on semiconductor device, described semiconductor device is electrically connected on Minimal Tension electroconductive elastic sheet, described large area contact and Minimal Tension electroconductive elastic sheet are all electrically connected to the pin outlet on encapsulated layer, described encapsulated layer comprises first ring epoxy layer, carbon fiber layer, electro-magnetic screen layer, second epoxy resin layer, described second epoxy resin layer parcel covers electro-magnetic screen layer, described electro-magnetic screen layer parcel coated carbon fibrage, described carbon fiber layer parcel covers first ring epoxy layer.
2. the semiconductor package of a kind of low temperature antidetonation according to claim 1, is characterized in that, described cooling heat-transfer device is fin.
3. the semiconductor package of a kind of low temperature antidetonation according to claim 2, is characterized in that, described fin quantity is 2, is separately positioned on encapsulated layer without the surface of pin to be arranged symmetrically.
4. the semiconductor package of a kind of low temperature antidetonation according to claim 1, is characterized in that, described Minimal Tension electroconductive elastic sheet is U-shaped electroconductive elastic sheet.
5. the semiconductor package of a kind of low temperature antidetonation according to claim 1, is characterized in that, described electro-magnetic screen layer is Nano Silver bisque.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520226229.7U CN204516743U (en) | 2015-04-15 | 2015-04-15 | A kind of semiconductor package of low temperature antidetonation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520226229.7U CN204516743U (en) | 2015-04-15 | 2015-04-15 | A kind of semiconductor package of low temperature antidetonation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204516743U true CN204516743U (en) | 2015-07-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520226229.7U Withdrawn - After Issue CN204516743U (en) | 2015-04-15 | 2015-04-15 | A kind of semiconductor package of low temperature antidetonation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204516743U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104766835A (en) * | 2015-04-15 | 2015-07-08 | 江苏晟芯微电子有限公司 | Low-temperature and shock-resistant semiconductor package structure |
-
2015
- 2015-04-15 CN CN201520226229.7U patent/CN204516743U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104766835A (en) * | 2015-04-15 | 2015-07-08 | 江苏晟芯微电子有限公司 | Low-temperature and shock-resistant semiconductor package structure |
| CN104766835B (en) * | 2015-04-15 | 2017-07-28 | 苏州聚达晟芯微电子有限公司 | A kind of semiconductor package of low temperature antidetonation |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160531 Address after: 215300 Jiangsu province north of the city of Yushan town of Kunshan city Hanpu Road No. 998, room 3 Patentee after: Suzhou Juda senchip Microelectronics Co. Ltd. Address before: 225500 hi tech innovation center, Jiangyan District, Taizhou, Jiangsu Patentee before: Jiangsu Senchip Microelectronics Co., Ltd. |
|
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20150729 Effective date of abandoning: 20170728 |