CN204497233U - Encapsulating structure - Google Patents
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- CN204497233U CN204497233U CN201520107786.7U CN201520107786U CN204497233U CN 204497233 U CN204497233 U CN 204497233U CN 201520107786 U CN201520107786 U CN 201520107786U CN 204497233 U CN204497233 U CN 204497233U
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Abstract
A kind of encapsulating structure, described encapsulating structure comprises: first substrate and second substrate, described second substrate has first surface and the second surface relative with described first surface, and it is bonding that a side surface of described first substrate and the first surface of second substrate pass through adhesive-layer; Be positioned at the groove structure of the second surface of described second substrate; Substrate, described substrate has first surface and the second surface relative with described first surface, and the first surface of described substrate has induction zone and is positioned at the some weld pads around induction zone; The second surface of described second substrate and the first surface pressing of substrate, form cavity between described groove structure and substrate, described induction zone is positioned at described cavity.Described encapsulating structure has double-deck upper cover substrate, is convenient to follow-up removal first substrate, reduces the thickness of the final encapsulating structure formed, and reservation second substrate is protected suprabasil induction zone.
Description
Technical field
The utility model relates to technical field of semiconductors, particularly a kind of encapsulating structure of image sensing chip.
Background technology
Wafer stage chip encapsulation (Wafer Level Chip Size Packaging, WLCSP) technology is that after carrying out packaging and testing to full wafer wafer, cutting obtains the technology of single finished product chip packing-body again, and the chip packing-body size after encapsulation is consistent with nude film.
Crystal wafer chip dimension encapsulation technology changes conventional package as the pattern of ceramic leadless chip carrier (CeramicLeadless Chip Carrier), organic leadless chip carrier (Organic Leadless Chip Carrier) and digital-code camera module formula, has complied with that market is day by day light, little, short to microelectronic product, thinning and low priceization requirement.Chip size after the encapsulation of crystal wafer chip dimension encapsulation technology reaches highly microminiaturized, and chip cost significantly reduces along with the reduction of chip size and the increase of wafer size.Crystal wafer chip dimension encapsulation technology be IC can be designed, technology that wafer manufacture, packaging and testing, Substrate manufacture integrate, be the focus in current encapsulation field and the trend of future development.
In existing Wafer level packaging; particularly for the encapsulation of image sensing chip; usual meeting is formed in the one side of device at semiconductor crystal wafer and covers a upper cover substrate, with protection device injury-free and pollution in encapsulation process, plays a protective role to device.
Please refer to Fig. 1, is the cross-sectional view of the wafer stage chip encapsulating structure that prior art is formed.Comprise: substrate 10, described substrate 10 is formed with induction zone 20, the substrate 10 of described senser element both sides is formed with weld pad 21, the opposite side surface relative with induction zone 20 of described substrate 10 is formed with through hole, described through hole exposes weld pad 21, described through-hole side wall and substrate 10 surface have insulating barrier 11, weld pad 21 and partial insulative layer 11 surface have line layer 12, described line layer 12 and insulating barrier 11 are covered by the solder mask 13 with opening, and described opening part has the soldered ball 14 of connection line layer 12.
One side surface with induction zone 20 of described substrate 10 is covered by upper cover substrate 30, between described upper cover substrate 30 and substrate 10 surface, there is cavity wall 31, cavity is formed between described cavity wall 31 and upper cover substrate 30, substrate 10, make described induction zone 20 be positioned at described cavity, avoid described device polluted and damage.
The thickness of wherein said upper cover substrate 30 is usually very large, be generally about 400 μm, to meet process requirements, this just makes the size of the chip packing-body that wafer cutting after encapsulation is formed partially thick, on follow-up chip packing-body, the integral thickness of module is also partially thick, can not meet the demand of market for electronic product thinning day by day.
The existing thickness in order to reduce wafer level packaging, can by the upper cover substrate of the crystal column surface after encapsulate removal (please refer to Fig. 2), described induction zone 20 is exposed, although the thickness of wafer level packaging body declines, but induction zone 20 is easily polluted and damaged, thus affect the overall performance of encapsulating structure.
Existingly need a kind of encapsulating structure that can reduce thickness badly.
Utility model content
The problem that the utility model solves is to provide a kind of encapsulating structure, is convenient to the thickness reducing encapsulating structure.
For solving the problem, the utility model provides a kind of encapsulating structure, comprise: first substrate and second substrate, described second substrate has first surface and the second surface relative with described first surface, and it is bonding that arbitrary surface of described first substrate and the first surface of second substrate pass through adhesive-layer; Be positioned at the groove structure of the second surface of described second substrate; Substrate, described substrate has first surface and the second surface relative with described first surface, and the first surface of described substrate has induction zone and is positioned at the some weld pads around induction zone; The second surface of described second substrate and the first surface pressing of substrate, form cavity between described groove structure and substrate, described induction zone is positioned at described cavity.
Optionally, the thickness of described first substrate is 300 μm ~ 500 μm.
Optionally, the thickness of described second substrate is 100 μm ~ 200 μm.
Optionally, described adhesive-layer comprises the first adhesive-layer and the second adhesive-layer.
Optionally, the first adhesive-layer is positioned at first substrate surface, and the second adhesive-layer is positioned on the first surface of second substrate; Or described second adhesive-layer is positioned at first substrate surface, described first adhesive-layer is located on the first surface of second substrate.
Optionally, described groove structure comprises: the cavity wall material layer on the second surface of described second substrate; Be positioned at the groove of described cavity wall material layer.
Optionally, described groove structure comprises the groove of the second surface being positioned at described second substrate.
Optionally, described substrate comprises some unit, and each unit correspondence is formed with induction zone and is positioned at the some weld pads around induction zone; Between adjacent cells, there is Cutting Road; Be positioned at described second substrate and do not have some grooves with the groove structure on the opposite side surface of first substrate pressing, described groove is corresponding with the some induction zones on some unit respectively.
Optionally, also comprise: the through hole being positioned at the second surface of substrate, described via bottoms exposes the part surface of weld pad; Be positioned at the insulating barrier of the second surface of substrate and the sidewall surfaces of through hole; Be positioned at the metal level that described surface of insulating layer connects weld pad; Be positioned at the solder mask that described layer on surface of metal and surface of insulating layer have opening, described opening exposes Metallschicht; Be positioned at the external projection of described layer on surface of metal.
Optionally, described metal level fills full described through hole and the surface of surface insulation layer flushes; Opening in described solder mask exposes the top surface of metal level; The external projection of connection metal layer top surface is formed in described opening.
Compared with prior art, the technical solution of the utility model has the following advantages:
The technical solution of the utility model provides a kind of encapsulating structure, described encapsulating structure comprises first substrate and second substrate, and a side surface and the second substrate first surface of described first substrate be bonding by adhesive-layer, the groove structure that is positioned at described second substrate second surface; The second surface of described second substrate and the first surface pressing of substrate, form cavity between described groove structure and substrate, makes described suprabasil induction zone be positioned at described cavity.Described first substrate and second substrate form double-deck upper cover substrate structure, are convenient to follow-up removal first substrate wherein, reduce the thickness of the encapsulating structure formed.And do not need to adopt the techniques such as etching or grinding that the thickness of described upper cover substrate is declined, thus reducing the thickness of encapsulating structure simultaneously, guarantee the second substrate surfacing retained, it can play a protective role to induction zone.
Accompanying drawing explanation
Fig. 1 to Fig. 2 is the cross-sectional view of the encapsulating structure of prior art of the present utility model;
Fig. 3 to Figure 13 is the structural representation of the forming process of the encapsulating structure of embodiment of the present utility model.
Embodiment
As described in the background art, the thickness of the upper cover substrate of the encapsulating structure that prior art is formed is comparatively large, can not meet the demand of market for the thinning day by day of electronic product name.And, for the encapsulating structure with optical sensing unit, the upper cover substrate of described encapsulating structure requires to have higher light transmission, if adopt grinding technics or etching technics to carry out thinning to upper cover substrate, what the surface of upper cover substrate can be made to become is coarse, affect the light transmission of described upper cover substrate, and complex process, cost is higher.And remove described upper cover substrate, although the thickness of encapsulating structure can be reduced, the performance of encapsulating structure can be affected.
In embodiment of the present utility model; the double layer substrate that first substrate and second substrate pressing are formed by employing is as the upper cover substrate of encapsulating structure; thus can after formation encapsulating structure; remove the first substrate that thickness is larger; the thickness of the encapsulating structure made declines; further, described second substrate still can play a protective role to device, avoids the performance of encapsulating structure to be affected.
For enabling above-mentioned purpose of the present utility model, feature and advantage more become apparent, and are described in detail specific embodiment of the utility model below in conjunction with accompanying drawing.
Please refer to Fig. 3, first substrate 100 is provided.
The material of described first substrate 100 is glass, silicon chip, pottery or plastics.Described first substrate 100 is as a part for the double-deck upper cover substrate of the encapsulating structure of follow-up formation; for the protection of the induction zone of the follow-up substrate surface to be packaged provided; so require that the material of described first substrate 100 is hard material; there is higher intensity and corrosion resistance, the stress of extraneous applying in follow-up encapsulation process and various chemical contamination can be born.
Printing opacity or lighttight material can not retain in encapsulating structure because described first substrate 100 is follow-up, so all as the material of first substrate 100, can not can impact to the performance of encapsulating structure.
In the present embodiment, the thickness of described first substrate 100 is 300 μm ~ 500 μm, makes described first substrate 100 have enough thickness and intensity, meets the follow-up needs made.
Please refer to Fig. 4, provide second substrate 200, described second substrate 200 has first surface 200a and the second surface 200b relative with described first surface 200a.
Described second substrate 200 has higher light transmission, is light transmissive material, and the surfacing of described second substrate 200, smooth, can not produce scattering, diffuse reflection etc., thus guarantee that described second substrate 200 has higher light transmission to the light of incidence.
The follow-up substrate to be packaged provided comprises induction zone, and described induction zone is optical sensor district.Described second substrate 200 is finally retained in encapsulating structure, is positioned at above optical sensor district, thus needs to select light transmissive material as the material of second substrate 200, is convenient to second substrate 200 described in light therethrough and is irradiated to described optical sensor district.
Concrete, in the present embodiment, the material of described second substrate 200 is unorganic glass or polymethyl methacrylate.
Area, the shape of the area of described second substrate 200, shape and first substrate 100 (please refer to Fig. 4) are identical, make follow-up by after second substrate 200 and first substrate 100 pressing, described second substrate 200 can be completely overlapping with first substrate 100.
The thickness of described second substrate 200 is 100 μm ~ 200 μm.Because described second substrate 200 is finally retained in encapsulating structure, so the thickness of described second substrate 200 can not be excessive, otherwise encapsulating structure thickness can be caused can not to meet the thinning requirement of electronic product.And the thickness of described second substrate 200 can not be too small; if the thickness of described second substrate 200 is less than 100 μm; the intensity of described second substrate 200 can be caused more weak; the external carbuncle that can bear declines; easily chipping; enough protective effects cannot be played to the induction zone in encapsulating structure, easily cause the problem that encapsulating structure lost efficacy.
Described second substrate 200 has two surfaces, can select wherein that arbitrary surface is as first surface 200a, and accordingly, the surface corresponding with this first surface 200a is as second surface 200b.
Follow-up that described second substrate 200 is bonding by adhesive-layer with first substrate 100 (please refer to Fig. 3), form double-deck upper cover substrate.
Please refer to Fig. 5 to Fig. 6, in the present embodiment by second substrate 200 (please refer to Fig. 4) and first substrate 100 (please refer to Fig. 3) by the bonding structural representation of adhesive-layer.
Please refer to Fig. 5, form adhesive-layer 101 on arbitrary surface of first substrate 100.
Described adhesive-layer 101 can be formed in any side surface of first substrate 100.Described adhesive-layer 101 has viscosity, for making pressing between first substrate 100 and the follow-up second substrate provided be integrated, forms double-deck upper cover substrate structure.
The material of described adhesive-layer 101 can be polymeric material, such as, can be the polymeric materials such as epoxy resin, polyimide resin, benzocyclobutane olefine resin, polybenzoxazoles resin, polybutylene terephthalate, Merlon, PETG, polyethylene, polypropylene, polyolefin, polyurethane, polyolefin, polyether sulfone, polyamide, polyurethane or polyvinyl alcohol.
Spraying, spin coating can be passed through or paste technique to form described adhesive-layer 101, form the uniform adhesive-layer 101 of thickness with the side surface at described first substrate 100, and make the surfacing of described adhesive-layer 101.
For the ease of in subsequent technique, first substrate 100 and second substrate pressing are formed double-deck upper cover substrate, and after the package has been finalized, can be peeled off from second substrate by first substrate 100 smoothly, the material of described adhesive-layer 101 can be heat decomposition type adhesive-layer.Follow-uply carry out heat treated to described adhesive-layer 101, the material of adhesive-layer 101 can be made to decompose, the viscosity of the described adhesive-layer 101 made disappears, thus first substrate 101 is come off.
Please refer to Fig. 6, by bonding by adhesive-layer 101 for the first surface 200a of arbitrary surface of described first substrate 100 and second substrate 200.
In the present embodiment, by adhesive-layer 101 pressing on the first surface 200a of second substrate 200 and first substrate 100 surface, thus described first substrate 100 and second substrate 200 pressing are integrated, form double-deck upper cover substrate.Further, due to bonding by adhesive-layer 101 between described first substrate 100 and second substrate 200, follow-up also easy described first substrate 100 to be separated with second substrate 200.
Described first substrate 100 and second substrate 200 pressing are integrated, form double-deck upper cover substrate, make described upper cover substrate have enough thickness, can meet in follow-up encapsulation procedure for the thickness of upper cover substrate and requirement of strength.
In other embodiments of the present utility model, also after can forming adhesive-layer 101 on the first surface 200a of second substrate 200, pressing is carried out again with arbitrary surface of first substrate 100, make described first substrate 100 and second substrate 200 bonding by adhesive-layer 101, form double-deck upper cover substrate.
In another embodiment of the present utility model, also provide another kind of by bonding by adhesive-layer with first substrate for described second substrate, form the method for double-deck upper cover substrate, comprise: form the first adhesive-layer on arbitrary surface of first substrate 100 (please refer to Fig. 3), at upper formation second adhesive-layer of the first surface 200a (please refer to Fig. 4) of second substrate 200 (please refer to Fig. 4), or form the second adhesive-layer on the arbitrary surface of first substrate 100, the first surface 200a of second substrate 200 forms the first adhesive-layer; Then by described first substrate 100 and second substrate 200 by described first adhesive-layer, the second adhesive-layer pressing, described first adhesive-layer and the second adhesive-layer form the adhesive-layer of bonding first substrate 100 and second substrate 200.
The material of described first adhesive-layer and the second adhesive-layer can be polymeric material, such as, can be the polymeric materials such as epoxy resin, polyimide resin, benzocyclobutane olefine resin, polybenzoxazoles resin, polybutylene terephthalate, Merlon, PETG, polyethylene, polypropylene, polyolefin, polyurethane, polyolefin, polyether sulfone, polyamide, polyurethane or polyvinyl alcohol.Spraying, spin coating can be passed through or paste technique to form described first adhesive-layer and the second adhesive-layer.
First substrate 100, second substrate 200 are separated for the ease of follow-up, the first adhesive-layer in described adhesive-layer can adopt laser to irradiate breakdown type adhesive-layer, and described second adhesive-layer can adopt the sticking polymeric material of any tool.Irradiating subsequently through laser makes described first adhesive-layer occur decompose thus lose viscosity, makes first substrate 100, second substrate 200 is separated.
The thickness of described first adhesive-layer is larger, the laser power needed when follow-up employing laser sub irradiation solution processes adhesive-layer is larger, it is higher that laser irradiates the heat produced, make decomposition efficiency lower, and too high heat is easily affected to the first substrate of adhesive-layer both sides and second substrate performance, in order to avoid the problems referred to above, the first adhesive-layer that thickness is lower can be adopted, the thickness of described first adhesive-layer is such as made to be less than 3 microns, concrete, the thickness of described first adhesive-layer can be 0.2 micron ~ 0.9 micron, or 1.1 microns ~ 2 microns.
When the thickness of described first adhesive-layer is lower, viscosity is also lower, thus need to form the second adhesive-layer again, improve the gross thickness of the adhesive-layer after first substrate 100 and second substrate 200 pressing, thus improve the viscosity of adhesive-layer, avoid described first substrate 100, second substrate 200 is separated in follow-up encapsulation process.
In other embodiments of the present utility model, described first adhesive-layer and the second adhesive-layer can also be all heat decomposition type adhesive-layers, follow-uply can pass through heating and decomposition treatment, make described first adhesive-layer and the second adhesive-layer lose viscosity.
Please refer to Fig. 7, form groove structure at the second surface 200b of second substrate 200.
In the present embodiment, described groove structure comprises: the cavity wall material layer 201 on the second surface 200b of described second substrate 200; Be positioned at the groove 202 of described cavity wall material layer 201.
Concrete, in the present embodiment, the formation method forming described groove structure comprises: on the second surface of described second substrate 200, form complete cavity wall material layer 201, etch described cavity wall material layer 201 to second substrate 200 surface, in described cavity wall material layer 201, form groove 202.Described groove location is corresponding with the position of the follow-up suprabasil induction zone provided.The degree of depth of described groove 202 is greater than the element height in the follow-up suprabasil induction zone provided.
In the present embodiment, the material of described cavity wall material layer 201 is photoresist, spraying, spin coating can be passed through or paste technique to form described cavity wall material layer 201 on the second surface 200b of second substrate 200, then described cavity wall material layer 201 is exposed, developed, form described groove 202.
In other embodiments of the present utility model, the material of described cavity wall material layer 201 can also be the insulating dielectric materials such as silica, silicon nitride, silicon oxynitride, form described cavity wall material layer 201 by depositing operation, and dry etching is carried out to form groove 202 in described cavity wall material layer 201 to described cavity wall material layer 201.
In other embodiments of the present utility model, described groove structure can comprise the groove of the second surface 200b being positioned at described second substrate 200.Concrete, the formation method of described groove structure comprises: etch the second surface 200b of described second substrate 200, in described second substrate 200, form groove.Dry etch process can be adopted to etch described second substrate 200, form described groove.
Please refer to Fig. 8, provide substrate 300, described substrate 300 has first surface 401 and the second surface 402 relative with described first surface 401, and the first surface 401 of described substrate 300 has induction zone 301 and is positioned at the some weld pads 302 around induction zone 301.
In the present embodiment, described substrate 300 is wafer, comprise be positioned at first surface 401 induction zone 301, weld pad 302, functional areas (not shown) and silicon substrate around the some discrete arrangement around induction zone 301.Described induction zone 301 is optical sensor district, the input/output terminal that described weld pad 302 is connected with external circuit as the device in induction zone 301.
Shown in Fig. 8 is the generalized section of the substrate with an induction zone.
In other embodiments of the present utility model, described substrate 300 can comprise some unit, and each unit correspondence is formed with induction zone 301 and is positioned at the some weld pads 302 around induction zone 301; Between adjacent cells, there is Cutting Road, be convenient to after the package has been finalized, cut, form multiple chip packing-body.
Please refer to Fig. 9, by first surface 401 pressing of the second surface 200b of described second substrate 200 and substrate 300, form cavity between described groove 202 (please refer to Fig. 8) and substrate 300, make described induction zone 301 be positioned at described cavity.
In the present embodiment, cavity wall material layer 201 surface on the second surface 200b of described second substrate 200 forms adhesive layer and pressing is carried out in substrate 300, described adhesive layer can be polymeric adhesion material, the polymeric materials such as such as silica gel, epoxy resin, benzocyclobutene, can adopt spraying, spin coating or paste technique and form described adhesive layer.Described adhesive layer both can realize bonding effect, can play again insulation and sealing function.
By first surface 401 pressing of the second surface 200b of described second substrate 200 and substrate 300, cavity is formed between described cavity wall material layer 201, second substrate 200 and substrate 300, described empty cavity position is corresponding with the induction zone 301 that the first surface 401 of substrate 300 is formed, make described induction zone 301 be positioned at cavity, and the weld pad 302 around described induction zone 301 is outside cavity, between described substrate 300 and cavity wall material layer 201.
Described induction zone 301 is positioned at cavity, in follow-up encapsulation process, is subject to the protection of cavity wall material layer 201 of described first substrate 100, second substrate 200 and both sides, thus avoids described induction zone 301 sustain damage and pollute.
In other embodiments of the present utility model, in described second substrate 200, there is groove, reeded for a second substrate 200 tool side surface can be formed adhesive layer, first surface 401 that is direct and substrate 300 carries out pressing, make to form cavity between described second substrate 200 and substrate 300, make described induction zone 301 be positioned at cavity.
After first surface 401 pressing of the second surface 200b of described second substrate 200 and substrate 300, encapsulation process is carried out to the second surface 402 of substrate 300.
Please refer to Figure 10, for carrying out an embodiment of encapsulation process to the second surface 402 of substrate 300, the encapsulation process of this embodiment comprises:
First, carry out thinning to the second surface 402 of substrate 300, the thickness of described substrate 300 declined, etching or chemical mechanical milling tech can be adopted to carry out institute thinning so that follow-up in described substrate 300 formation through hole.
Then etch the second surface 402 of substrate 300, in described substrate 300, form through hole, described via bottoms exposes the part surface of weld pad 302, and described through hole is for the formation of the metal connecting structure connecting weld pad 302.
Form insulating barrier 311 at the second surface 402 of substrate 300 and the sidewall surfaces of through hole, the material of described insulating barrier 311 can be the insulating dielectric materials such as silica, silicon nitride, insulate with the metal level of follow-up formation for making described substrate 300; Form on described insulating barrier 311 surface the metal level 312 connecting weld pad 302 again, described metal level 312 is electrically connected with weld pad 302.
The solder mask 313 with opening is formed on described metal level 312 surface and insulating barrier 311 surface; the material of described solder mask 313 is the insulating dielectric materials such as silica, silicon nitride; for the protection of described metal level 312; described opening exposes partial metal layers 312 surface, is convenient to follow-up at described metal level 312 surface formation solder joint.
Then forming external protruding 314, described external protruding 314 on described metal level 312 surface can be the syndeton such as soldered ball, metal column, can adopt the metal materials such as copper, aluminium, gold, tin or lead.
Please refer to Figure 11, for carrying out another embodiment of encapsulation process to the second surface 402 of substrate 300, described encapsulation process comprises: to the second surface 402 of substrate 300 carry out thinning after, the second surface 402 of substrate 300 is etched, in described substrate 300, form through hole, described via bottoms exposes the part surface of weld pad 302; Insulating barrier 303 is formed at the second surface 402 of substrate 300 and the sidewall surfaces of through hole; Form on described insulating barrier 303 surface the metal level 304 connecting weld pad 302, described metal level 304 fills full described through hole and surface flushes with the surface of insulating barrier 303; Form the solder mask 305 with opening on described metal level 304 surface and insulating barrier 303 surface, the opening in described solder mask 305 exposes the top surface of metal level 304; In described opening, form external protruding 306 of connection metal layer 304 top surface, described external protruding 306 is the syndeton such as soldered ball, metal column, can adopt the metal materials such as copper, aluminium, gold, tin or lead.
Please refer to Figure 12 and Figure 13, remove described first substrate 100 (please refer to Figure 10 and Figure 11) and adhesive-layer 101 (please refer to Figure 10 and Figure 11).The structure that two embodiments of Figure 12 and Figure 13 corresponding above-mentioned encapsulation process are respectively formed.
After encapsulation process is completed to the second surface 402 of described first substrate 100; form encapsulating structure; but the thickness of the upper cover substrate on the first surface 401 of the substrate 300 of described encapsulating structure is larger; remove described first substrate 100; can reduce the upper cover substrate thickness on the first surface 401 of substrate 300, and the second substrate 101 retained still can play a protective role to the induction zone 301 in described substrate 300.
In the present embodiment, the adhesive-layer 101 between first substrate 100 and second substrate 200 is heat decomposition type adhesive-layer, and the material of adhesive-layer 101 can be made under heat effect to occur decompose and lose viscosity.So, in the present embodiment, adopt heat resolve method to process described adhesive-layer 101, make described adhesive-layer 101 lose viscosity, thus first substrate is come off from adhesive-layer 101 surface, to remove described first substrate 100.Described heating-up temperature is less than the external fusing point of protruding 314, avoids impacting the performance of encapsulating structure.
In other embodiments of the present utility model, adhesive-layer between described first substrate 100 and second substrate 200 comprises the first adhesive-layer and the second adhesive-layer, and described first adhesive-layer is laser irradiates breakdown type adhesive-layer, laser sub irradiation solution can be adopted to process described adhesive-layer, make the material of the first adhesive-layer occur decompose and lose viscosity.Concrete, described laser sub irradiation solution can adopt wavelength to be the yag laser of 1064nm, and power output is 15W ~ 40W, in other embodiments of the present utility model, can also adopt the laser of other wavelength, the laser of such as ultraviolet wavelength irradiates.
In other embodiments of the present utility model, described adhesive-layer 101 comprises the first adhesive-layer and the second adhesive-layer, and described first adhesive-layer and the second adhesive-layer are heat decomposition type adhesive-layer, heat resolve method can be adopted to process described adhesive-layer, make described first adhesive-layer and the second adhesive-layer all lose viscosity, thus first substrate 100 is separated with second substrate 200.
If adopt wet method or dry etch process to remove first substrate 100, easily the material of described other parts of encapsulating structure and device are impacted, adopt said method then can avoid above-mentioned impact.
After removing described first substrate 100, can clean described second substrate 200 surface, to remove the adhesive-layer 101 of second substrate 200 remained on surface, expose the surface of second substrate 200.The cleaning agent that described cleaning process adopts can not cause corrosion to second substrate 200, thus can not affect planarization and the light transmission on second substrate 200 surface.
Because the thickness of described first substrate 100 is larger; after removing described first substrate 100; the thickness of the encapsulating structure formed is declined, and the second substrate 200 retained still can play a protective role to induction zone, thus guarantee that the performance of described encapsulating structure is not by external influence.
To sum up, in enforcement of the present utility model, first substrate and second substrate are passed through adhesive-layer bonding, then groove structure is formed at the second surface of second substrate, and with the first surface pressing of substrate, form cavity between described groove structure and substrate, make the induction zone of described substrate surface be positioned at described cavity.Described first substrate and second substrate form double-deck upper cover substrate structure, after substrate pressing, can protect suprabasil induction zone in follow-up encapsulation process.And described upper cover substrate is double-decker, be convenient to follow-up removal first substrate wherein, reduce the thickness of the encapsulating structure formed.
In other embodiments of the present utility model, also provide a kind of encapsulating structure adopting said method to be formed.
Please refer to Figure 10 and Figure 11, described encapsulating structure comprises: first substrate 100 and second substrate 200, described second substrate 200 has first surface 200a and the second surface 200b relative with described first surface 200a, and it is bonding that arbitrary surface of described first substrate 100 and the first surface 200a of second substrate 200 pass through adhesive-layer 101; Be positioned at the groove structure of the second surface 200b of described second substrate 200; Substrate 300, described substrate 300 has first surface 401 and the second surface 402 relative with described first surface 401, and the first surface 401 of described substrate 300 has induction zone 301 and is positioned at the some weld pads 302 around induction zone 301; The second surface 200b of described second substrate 200 and first surface 401 pressing of substrate 300, form cavity between described groove structure and substrate 300, described induction zone 301 is positioned at described cavity.
The material of described first substrate 100 is glass, silicon chip, pottery or plastics.Described first substrate 100 is as a part for the double-deck upper cover substrate of encapsulating structure; for the protection of the induction zone of substrate surface; so require that the material of described first substrate 100 is hard material; to have higher intensity and corrosion resistance, for bearing the stress of extraneous applying and various chemical contamination.
In the present embodiment, the thickness of described first substrate 100 is 300 μm ~ 500 μm, makes described first substrate 100 have enough thickness and intensity, meets the follow-up needs made.
Described second substrate 200 has higher light transmission, is light transmissive material, and the surfacing of described second substrate 200, smooth, can not produce scattering, diffuse reflection etc., thus guarantee that described second substrate 200 has higher light transmission to the light of incidence.Described substrate comprises induction zone, and described induction zone is optical sensor district.Described second substrate 200 is finally retained in encapsulating structure, is positioned at above optical sensor district, thus needs to select light transmissive material as the material of second substrate 200, is convenient to second substrate 200 described in light therethrough and is irradiated to described optical sensor district.Concrete, in the present embodiment, the material of described second substrate 200 is unorganic glass or polymethyl methacrylate.
Area, the shape of the area of described second substrate 200, shape and first substrate 100 are identical, make described second substrate 200 and first substrate 100 completely overlapping.
The thickness of described second substrate 200 is 100 μm ~ 200 μm.Because described second substrate 200 is finally retained in encapsulating structure, so the thickness of described second substrate 200 can not be excessive, otherwise encapsulating structure thickness can be caused can not to meet the thinning requirement of electronic product.And the thickness of described second substrate 200 can not be too small; if the thickness of described second substrate 200 is less than 100 μm; the intensity of described second substrate 200 can be caused more weak; the external carbuncle that can bear declines; easily chipping; enough protective effects cannot be played to the induction zone in encapsulating structure, easily cause the problem that encapsulating structure lost efficacy.
Described second substrate 200 has two surfaces, can select wherein that arbitrary surface is as first surface 200a, and accordingly, the surface corresponding with this first surface 200a is as second surface 200b.
The first surface 200a of described second substrate 200 is bonding by adhesive-layer 101 with arbitrary surface of first substrate 100.Described adhesive-layer 101 has viscosity, the material of described adhesive-layer 101 can be polymeric material, such as, can be the polymeric materials such as epoxy resin, polyimide resin, benzocyclobutane olefine resin, polybenzoxazoles resin, polybutylene terephthalate, Merlon, PETG, polyethylene, polypropylene, polyolefin, polyurethane, polyolefin, polyether sulfone, polyamide, polyurethane or polyvinyl alcohol.
In the present embodiment, the material of described adhesive-layer 101 can be heat decomposition type adhesive-layer.Follow-up heat treated is carried out to described adhesive-layer 101, the material of adhesive-layer 101 can be made to decompose, the viscosity of described adhesive-layer 101 is disappeared, thus first substrate 101 is come off.
In other embodiments of the present utility model, described adhesive-layer 101 can also comprise the first adhesive-layer and the second adhesive-layer.In an embodiment implemented of the present utility model, the first adhesive-layer is positioned at first substrate 100 surface, and the second adhesive-layer is positioned on the first surface 200a of second substrate 200; In another embodiment of the present utility model, the second adhesive-layer is positioned at first substrate 100 surface, and the first adhesive-layer is located on the first surface 200a of second substrate 200.
The material of described first adhesive-layer and the second adhesive-layer can be polymeric material, such as, can be the polymeric materials such as epoxy resin, polyimide resin, benzocyclobutane olefine resin, polybenzoxazoles resin, polybutylene terephthalate, Merlon, PETG, polyethylene, polypropylene, polyolefin, polyurethane, polyolefin, polyether sulfone, polyamide, polyurethane or polyvinyl alcohol.
The first adhesive-layer in described adhesive-layer 101 can adopt laser to irradiate breakdown type adhesive-layer, and described second adhesive-layer can adopt the sticking polymeric material of any tool.Irradiated by laser and make to occur decompose thus lose viscosity by the first adhesive-layer, make first substrate 100, second substrate 200 is separated.The thickness of described first adhesive-layer is less than 3 microns, concrete, and the thickness of described first adhesive-layer can be 0.2 micron ~ 0.9 micron, or 1.1 microns ~ 2 microns.
In other embodiments of the present utility model, described first adhesive-layer and the second adhesive-layer can also be all heat decomposition type adhesive-layers, follow-uply can pass through heating and decomposition treatment, make described first adhesive-layer and the second adhesive-layer lose viscosity.
In the present embodiment, described groove structure comprises: the cavity wall material layer 201 on the second surface 200b of described second substrate 200; Be positioned at the groove 202 of described cavity wall material layer 201.The material of described cavity wall material layer 201 is photoresist, can also be the insulating dielectric materials such as silica, silicon nitride, silicon oxynitride.
In other embodiments of the present utility model, described groove structure can comprise be positioned at described second substrate 200 not with the groove on the opposite side surface of first substrate 100 pressing.
In the present embodiment, described substrate 300 is wafer, comprises the induction zone 301 being positioned at first surface 401, around the weld pad 302 of the some discrete arrangement around induction zone 301, functional areas (not shown) and silicon substrate.Described induction zone 301 is optical sensor district, the input/output terminal that described weld pad 302 is connected with external circuit as the device in induction zone 301.
In other embodiments of the present utility model, described substrate 300 can comprise some unit, and each unit correspondence is formed with induction zone 301 and is positioned at the some weld pads 302 around induction zone 301; Between adjacent cells, there is Cutting Road, be convenient to cut, form multiple chip packing-body.The groove structure being positioned at the second surface of described second substrate has some grooves, and described groove is corresponding with the some induction zones on some unit respectively.
The second surface 200b of described second substrate 200 and first surface 401 pressing of substrate 300, cavity is formed between described cavity wall material layer 201, second substrate 200 and substrate 300, described empty cavity position is corresponding with the induction zone 301 that the first surface 401 of substrate 300 is formed, make described induction zone 301 be positioned at cavity, and the weld pad 302 around described induction zone 301 is outside cavity, between described substrate 300 and cavity wall material layer 201.Described induction zone 301 is subject to the protection of cavity wall material layer 201 of described first substrate 100, second substrate 200 and both sides, thus avoids described induction zone 301 sustain damage and pollute.
Please refer to Figure 10, in the present embodiment, described encapsulating structure also comprises: the through hole being positioned at the second surface 402 of substrate 300, and described via bottoms exposes the part surface of weld pad 302; Be positioned at the insulating barrier 311 of the second surface 402 of substrate 300 and the sidewall surfaces of through hole; Be positioned at the metal level 312 that described insulating barrier 311 surface connects weld pad 302; Be positioned at described metal level 312 surface and insulating barrier 311 surface has the solder mask 313 of opening, described opening exposes partial metal layers 312 surface; Be positioned at external protruding 314 of described metal level 312 surface, described external projection can be the syndeton such as soldered ball, metal column, can adopt the metal materials such as copper, aluminium, gold, tin or lead.
Please refer to Figure 11, in another embodiment of the present utility model, described encapsulating structure also comprises: the through hole being positioned at the second surface 402 of substrate 300, and described via bottoms exposes the part surface of weld pad 302; Be positioned at the insulating barrier 303 of the second surface 402 of substrate 300 and the sidewall surfaces of through hole; Be positioned at the metal level 304 that described insulating barrier 30. surface connects weld pad 302, described metal level 304 fills full through hole and surface flushes with insulating barrier 303 surface; Opening in described solder mask 305 exposes the top surface of metal level 304; In described opening, form external protruding 306 of connection metal layer 304 top surface, described external projection can be the syndeton such as soldered ball, metal column, and the material of described metal column can be the metal materials such as copper, aluminium, gold, tin or lead.
Embodiment of the present utility model also provides the another kind of encapsulating structure adopting said method to be formed.
Please refer to Figure 12 and Figure 13, described encapsulating structure comprises: second substrate 200, and described second substrate 200 has first surface 200a and the second surface 200b relative with described first surface 200a, and the thickness of described second substrate is 100 μm ~ 200 μm; Be positioned at the groove structure of described second substrate 200 second surface 200b; Substrate 300, described substrate 300 has first surface 401 and the second surface 402 relative with described first surface 401, and the first surface of described substrate 401 has induction zone 301 and is positioned at the some weld pads 302 around induction zone 301; The second surface 200b of described second substrate 200 and first surface 401 pressing of substrate 300, form cavity between described groove structure and substrate 300, makes described induction zone 301 be positioned at described cavity.
Described second substrate 200 has higher light transmission, is light transmissive material, and the surfacing of described second substrate 200, smooth, can not produce scattering, diffuse reflection etc., thus guarantee that described second substrate 200 has higher light transmission to the light of incidence.The material of described second substrate 200 can be unorganic glass or polymethyl methacrylate.
The thickness of described second substrate 200 is 100 μm ~ 200 μm, and thickness is less, makes the thickness of described encapsulating structure lower, meets the thinning demand of electronic product.And the thickness of described second substrate 200 can not be too small; if the thickness of described second substrate 200 is less than 100 μm; the intensity of described second substrate 200 can be caused more weak; the external carbuncle that can bear declines; easily chipping; enough protective effects cannot be played to the device in encapsulating structure, easily cause the problem of chip failure.
In the present embodiment, described groove structure comprises: the cavity wall material layer 201 on the second surface 200b of described second substrate 200; Be positioned at the groove 202 of described cavity wall material layer 201.The material of described cavity wall material layer 201 is photoresist, can also be the insulating dielectric materials such as silica, silicon nitride, silicon oxynitride.In other embodiments of the present utility model, described groove structure can comprise the groove of the second surface 200b being positioned at described second substrate 200.
In the present embodiment, described substrate 300 is wafer, comprise be positioned at first surface 401 induction zone 301, weld pad 302, functional areas (not shown) and silicon substrate around the some discrete arrangement around induction zone 301.Described induction zone 301 is optical sensor district, the input/output terminal that described weld pad 302 is connected with external circuit as the device in induction zone 301.
In other embodiments of the present utility model, described substrate 300 can comprise some unit, and each unit correspondence is formed with induction zone 301 and is positioned at the some weld pads 302 around induction zone 301; Between adjacent cells, there is Cutting Road, be convenient to cut, form multiple chip packing-body.The groove structure being positioned at the second surface 200b of described second substrate 200 has some grooves, and described groove is corresponding with the some induction zones on some unit respectively.
The second surface 200b of described second substrate 200 and first surface 401 pressing of substrate 300, cavity is formed between described cavity wall material layer 201, second substrate 200 and substrate 300, described empty cavity position is corresponding with the induction zone 301 that second substrate 200 first surface 401 is formed, make described induction zone 301 be positioned at cavity, and the weld pad 302 around described induction zone 301 is outside cavity, between described substrate 300 and cavity wall material layer 201.Described induction zone 301 is subject to the protection of the cavity wall material layer 201 of described second substrate 200 and both sides, thus avoids described induction zone 301 sustain damage and pollute.
Please refer to Figure 12, in an embodiment of the present utility model, described encapsulating structure also comprises: the through hole being positioned at the second surface 402 of substrate 300, and described via bottoms exposes the part surface of weld pad 302; Be positioned at the insulating barrier 311 of the second surface 402 of substrate 300 and the sidewall surfaces of through hole; Be positioned at the metal level 312 that described insulating barrier 311 surface connects weld pad 302; Be positioned at described metal level 312 surface and insulating barrier 311 surface has the solder mask 313 of opening, described opening exposes partial metal layers 312 surface; Be positioned at external protruding 314 of described metal level 312 surface, described external protruding 314 can be the syndeton such as soldered ball, metal column, can adopt the metal materials such as copper, aluminium, gold, tin or lead.
Please refer to Figure 13, in another embodiment of the present utility model, described encapsulating structure can also comprise: the through hole being positioned at the second surface 402 of substrate 300, and described via bottoms exposes the part surface of weld pad 302; Be positioned at the insulating barrier 303 of the second surface 402 of substrate 300 and the sidewall surfaces of through hole; Be positioned at the metal level 304 that described insulating barrier 303 surface connects weld pad 302, described metal level 304 fills full through hole and surface flushes with insulating barrier 303 surface; Opening in described solder mask 305 exposes the top surface of metal level 304; In described opening, form external protruding 306 of connection metal layer 304 top surface, described external projection can be the syndeton such as soldered ball, metal column, can adopt the metal materials such as copper, aluminium, gold, tin or lead.
Second substrate 200 thickness on the first surface 401 of the substrate 300 of described encapsulating structure only has 100 μm ~ 200 μm; thickness is less; make the thickness of described encapsulating structure lower; meet the thinning demand of electronic product; and; described second substrate 200 can play enough protective effects to the induction zone 301 on first surface 401, avoids described induction zone 301 sustain damage and pollute.
Although the utility model discloses as above, the utility model is not defined in this.Any those skilled in the art, not departing from spirit and scope of the present utility model, all can make various changes or modifications, and therefore protection range of the present utility model should be as the criterion with claim limited range.
Claims (10)
1. an encapsulating structure, is characterized in that, comprising:
First substrate and second substrate, described second substrate has first surface and the second surface relative with described first surface, and it is bonding that arbitrary surface of described first substrate and the first surface of second substrate pass through adhesive-layer;
Be positioned at the groove structure of the second surface of described second substrate;
Substrate, described substrate has first surface and the second surface relative with described first surface, and the first surface of described substrate has induction zone and is positioned at the some weld pads around induction zone;
The second surface of described second substrate and the first surface pressing of substrate, form cavity between described groove structure and substrate, described induction zone is positioned at described cavity.
2. encapsulating structure according to claim 1, is characterized in that, the thickness of described first substrate is 300 μm ~ 500 μm.
3. encapsulating structure according to claim 1, is characterized in that, the thickness of described second substrate is 100 μm ~ 200 μm.
4. encapsulating structure according to claim 1, is characterized in that, described adhesive-layer comprises the first adhesive-layer and the second adhesive-layer.
5. encapsulating structure according to claim 4, is characterized in that, described first adhesive-layer is positioned at first substrate surface, and the second adhesive-layer is positioned on the first surface of second substrate; Or described second adhesive-layer is positioned at first substrate surface, described first adhesive-layer is located on the first surface of second substrate.
6. encapsulating structure according to claim 1, is characterized in that, described groove structure comprises: the cavity wall material layer on the second surface of described second substrate; Be positioned at the groove of described cavity wall material layer.
7. encapsulating structure according to claim 1, is characterized in that, described groove structure comprises the groove of the second surface being positioned at described second substrate.
8. encapsulating structure according to claim 1, is characterized in that, described substrate comprises some unit, and each unit correspondence is formed with induction zone and is positioned at the some weld pads around induction zone; Between adjacent cells, there is Cutting Road; Be positioned at described second substrate and do not have some grooves with the groove structure on the opposite side surface of first substrate pressing, described groove is corresponding with the some induction zones on some unit respectively.
9. encapsulating structure according to claim 1, is characterized in that, also comprises: the through hole being positioned at the second surface of substrate, and described via bottoms exposes the part surface of weld pad; Be positioned at the insulating barrier of the second surface of substrate and the sidewall surfaces of through hole; Be positioned at the metal level that described surface of insulating layer connects weld pad; Be positioned at the solder mask that described layer on surface of metal and surface of insulating layer have opening, described opening exposes Metallschicht; Be positioned at the external projection of described layer on surface of metal.
10. encapsulating structure according to claim 9, is characterized in that, described metal level fills full described through hole and surface flushes with the surface of insulating barrier; Opening in described solder mask exposes the top surface of metal level; The external projection of connection metal layer top surface is formed in described opening.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2016127645A1 (en) * | 2015-02-13 | 2016-08-18 | 苏州晶方半导体科技股份有限公司 | Packaging method and packaging structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016127645A1 (en) * | 2015-02-13 | 2016-08-18 | 苏州晶方半导体科技股份有限公司 | Packaging method and packaging structure |
| US10529758B2 (en) | 2015-02-13 | 2020-01-07 | China Wafer Level Csp Co., Ltd. | Packaging method and packaging structure |
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