CN204496538U - A kind of multilayer wiring formula manifold type double-interface card carrier band module - Google Patents
A kind of multilayer wiring formula manifold type double-interface card carrier band module Download PDFInfo
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- CN204496538U CN204496538U CN201420675215.9U CN201420675215U CN204496538U CN 204496538 U CN204496538 U CN 204496538U CN 201420675215 U CN201420675215 U CN 201420675215U CN 204496538 U CN204496538 U CN 204496538U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
Abstract
The utility model discloses a kind of multilayer wiring formula manifold type double-interface card carrier band module being applicable to various chips encapsulation mode, comprising: carrier band basic unit, electrode film lamella, tuning capacitance layer, radio frequency discrimination RFID coil layer, pad and via hole; The one side of carrier band basic unit is carrier band module front, and the another side of carrier band basic unit is carrier band module backside, and electrode film lamella and tuning capacitance layer are positioned at carrier band basic unit front, and RFID coil layer and pad are positioned at the carrier band basic unit back side; Pad is arranged according to the Pin locations of chip; Via hole through hole metallization process, for the electrical connection of the pad of the electrode film lamella and carrier band module backside that realize carrier band module front; Electrode film lamella is used for carrying out the transmission of contact data; RFID coil layer is mated with tuning capacitance layer, for adjusting the non-contact data transmission frequency of carrier band module; Strong adaptability, manufacture craft is simple, and cost is low, and production efficiency is high, and quality stability is good, can meet the market demand of double-interface card.
Description
Technical field
The utility model relates to integrated circuit and field of information interaction, is specifically related to a kind of multilayer wiring formula manifold type double-interface card carrier band module being applicable to various chips encapsulation mode.
Background technology
Double-interface card, also interface card (Dual Interface Card) is, be on an IC (Integrated Circuit, integrated circuit) card, provide the mode of " contact " and " contactless " two kinds and extraneous interface based on single-chip simultaneously.Its profile is consistent with Contact Type Ic Card, has the hard contact meeting international standard, can by contact contact access chip; Its inner structure is then similar to contactless card, has the radio-frequency module such as antenna, chip, can at certain distance (in 10cm) with RF-wise access chip.Therefore, it has two operation interfaces, and follow two different standards respectively, contact interface meets ISO/IEC7816 standard; Non-contact interface meets ISO/IEC15693 standard or ISO11784/ISO11785 standard, both share same microprocessor, operating system and EEPROM (Electrically Erasable Programmable Read-Only Memory, band EEPROM (Electrically Erasable Programmable Read Only Memo))/FLASH.Therefore, it has gathered the advantage of Contact Type Ic Card and contactless card, be a kind of multifunction card, there is applicability widely, the needs of city one-card use, one card for multiple uses can be met, almost can be used in various occasion, especially for the user originally having used contactless card or Contact Type Ic Card system, do not need the hardware devices such as replacing system and facility, only need make an amendment use double-interface card of just can upgrading on software, therefore, the market outlook of double-interface card are limitless.
At present, in prior art, the basic manufacture method of double-interface card is:
1, the carrier band front of double-interface card is electrode diaphragm, for carrying out the transmission of contact data with read-write implement, meets the function of Contact Type Ic Card;
2, there are several blind holes and two metal pad in the carrier band back side of double-interface card, and the bottom of described blind hole is the electrode diaphragm in carrier band front;
3, the chip of double-interface card is placed on the back side of carrier band, and chip forward is placed, and active face, exposes all contact pins of chip and contactless pin outwardly;
4, adopt conventional fly line bonding scheme, by several blind holes, several contact pins of chip are connected with the electrode diaphragm in carrier band front;
5, adopt conventional fly line bonding scheme, two of chip noncontact pins are connected with two metal pad at the carrier band back side;
6, by epoxy glue, traditional plastics or ceramic package, chip and fly line etc. are sealed, make carrier band module;
7, the radio frequency identifying antenna of non-contact card is made, RFID (Radio Frequency Identification, radio-frequency (RF) identification) antenna;
8, RFID antenna is laminated in card base;
9, in the carrier band module package position groove milling of card base, two terminations of RFID antenna in groove, are exposed;
10, the carrier band module backside of double-interface card down, is embedded in the groove milling of card base;
11, in carrier band module, two terminations of two contactless tactile disks and the RFID antenna in groove milling are bondd by conducting resinl or the method such as welding contacts and connects;
12, the carrier band module package of double-interface card is in groove milling, and the electrode diaphragm in carrier band module front is substantially concordant with card primary surface.
, there is following problem in current fabrication techniques double-interface card:
1, conventional fly line bonding pattern is adopted to be connected by the non contact metal tactile disk of each pin of chip with the electrode diaphragm in carrier band front or the back side, complex process, and use epoxy glue or plastics, chip and fly line seal by ceramic package, heat energy when being unfavorable for the computing of IC chip is dispersed, increase chip inductance, reduce chip electrical property; Some elongated bonding fly lines will reduce the frequency range of data transmission simultaneously, increase current loss, reduce the stability of data transmission.
2, the connection of two non contact metal contacts of carrier band module and two end points of Ka Jinei RFID antenna all needs manual operations, and difficulty is large, and production efficiency is low, and connective stability is poor, easily comes off, and serviceable life is shorter, cannot meet application demand.
Therefore, the market outlook of double-interface card are very wide on the one hand, on the other hand, the manufacturing approach craft difficulty of prior art double-interface card is comparatively large, and production efficiency is lower, and the double-interface card quality stability simultaneously obtained is poor, serviceable life is shorter, far can not meet the market demand of double-interface card.
Utility model content
In view of this, the utility model provides a kind of multilayer wiring formula manifold type double-interface card carrier band module being applicable to various chips encapsulation mode, to solve the technical matters existed in prior art.
For solving the problem, the technical scheme that the utility model provides is as follows:
A kind of multilayer wiring formula manifold type double-interface card carrier band module, comprising:
Carrier band basic unit, electrode film lamella, tuning capacitance layer, radio frequency discrimination RFID coil layer, pad and via hole;
Described electrode film lamella, described tuning capacitance layer, described carrier band basic unit, described RFID coil layer and described pad are a kind of two-sided integral material covering metal;
The one side of described carrier band basic unit is described carrier band module front, the another side of described carrier band basic unit is described carrier band module backside, described electrode film lamella and described tuning capacitance layer are positioned at described carrier band basic unit front, and described RFID coil layer and described pad are positioned at the described carrier band basic unit back side;
Described pad is arranged according to the Pin locations of chip;
Described via hole through hole metallization process, for the electrical connection of the described pad of the described electrode film lamella and described carrier band module backside that realize described carrier band module front;
Described electrode film lamella is used for carrying out the transmission of contact data;
Described RFID coil layer is mated with described tuning capacitance layer, for adjusting the non-contact data transmission frequency of described carrier band module.
Accordingly, described pad comprises the first pad, the second pad, the 3rd pad and the 4th pad, and described via hole comprises the first via hole, the second via hole and the 3rd via hole;
Described first via hole is on described first pad, and described second via hole is on described second pad, and described 3rd via hole is on described 3rd pad;
Described second pad is connected to the outer end points of described RFID coil layer, described 4th pad is connected to the interior end points of described RFID coil layer, described second pad to be connected to the same metal contact block on described electrode diaphragm by described 3rd via hole by described second via hole and described 3rd pad, described first pad is connected to other metal contact blocks on described electrode diaphragm by described first via hole.
Accordingly, described first pad 5-8 altogether, each described first pad corresponds respectively to the first via hole described in a group, and each described first pad is connected to metal contact blocks different on described electrode diaphragm by described first via hole; Described second pad is corresponding to the second via hole described in a group; Described 3rd pad is corresponding to the 3rd via hole described in a group.
Accordingly, according to via diameter, the quantity of one group of via hole is 1-5, and the quantity of described via diameter and described one group of via hole is inverse ratio, to increase the electrical connection stability of described pad and described electrode film lamella.
Accordingly, described via diameter is 0.1mm-2mm.
Accordingly, described via hole is the blind hole from described pad to described electrode film lamella, or described via hole is the through hole got through to described electrode film lamella from described pad.
Accordingly, described via hole adopts machine die processing or laser-engraving technique processing or conventional via hole technology to process.
Accordingly, described chip adopts encapsulation mode to be connected with described pad, or described chip adopts fly line bonding pattern to be connected with described pad.
Accordingly, described electrode film lamella and described tuning capacitance are the metal that thickness is identical; Described RFID coil layer and described pad are the metal that thickness is identical.
Accordingly, the material of described carrier band basic unit comprises one or more the combination in FR-4 material, CEM-3 material, CEM-1 material, 94HB material, 94VO material, polyvinylchloride, polycarbonate, acrylonitrile-butadiene-styrene copolymer ABS, polyethylene terephtalate, polyethylene terephthalate-1,4-CHDM ester PETG, polyimide PI.
As can be seen here, the utility model embodiment has following beneficial effect:
The utility model embodiment adopts metallized blind hole or through hole to realize the electrical connection of carrier band front electrode membrane layer and carrier band backside pads, chip pin is directly connected connection that namely pad can realize chip and electrode film lamella, technique is simple, like this, both flip-chip mode packaged chip can be adopted, also can adopt conventional fly line bonding pattern packaged chip or other various chip package patterns, accommodation is wider.
Simultaneously, tuning capacitance layer, avoid external capacitor, the non-contact data transmission frequency of RFID coil layer and tuning capacitance layer Matching and modification carrier band module, make the contactless module of the contactless module of carrier band module and base card can by being of coupled connections, namely the carrier band module in the utility model embodiment no longer needs directly to be connected with the RFID antenna layer in card base, and the line avoided between carrier band chip with card base is connected, and production efficiency is higher.
Thus, the utility model embodiment can realize large-scale full-automatic production, not only be suitable for read write line and the using method of existing Contact Type Ic Card and contactless card completely, and the encapsulation of two interface chip and carrier band module both can adopt conventional fly line bonding pattern, the flip-chip mode having more superior function can also be adopted, adapt to current various chip encapsulating device, manufacture craft is simple, cost is low, production efficiency is high, quality stability is good, can meet the market demand of double-interface card.
Accompanying drawing explanation
Fig. 1 is the structural representation of multilayer wiring formula manifold type double-interface card carrier band module embodiments in the utility model embodiment;
Fig. 2 is the structural representation in carrier band module front when via hole is blind hole in the utility model embodiment;
Fig. 3 is the structural representation in carrier band module front when via hole is through hole in the utility model embodiment;
Fig. 4 is the structural representation of carrier band basic unit in the utility model embodiment;
Fig. 5 is the structural representation of carrier band module backside in the utility model embodiment;
Fig. 6 is the structural representation of the blind hole in the utility model embodiment after hole metallization process;
Fig. 7 is the structural representation of the through hole in the utility model embodiment after hole metallization process;
Fig. 8 is the planar structure schematic diagram of flip-chip mode in the utility model embodiment;
Fig. 9 is the cross section structure schematic diagram of flip-chip mode in the utility model embodiment;
Figure 10 is the planar structure schematic diagram of fly line bonding pattern in the utility model embodiment;
Figure 11 is the cross section structure schematic diagram of fly line bonding pattern in the utility model embodiment;
Figure 12 is the molded packages structural representation of fly line bonding pattern in the utility model embodiment.
Embodiment
For enabling above-mentioned purpose of the present utility model, feature and advantage become apparent more, are described in further detail the utility model embodiment below in conjunction with the drawings and specific embodiments.
In prior art, double-interface card carrier band module can only use fly line bonding pattern, uses fly line by blind hole, is connected to by chip pin on the electrode film lamella in carrier band front, complex process, and cannot uses other chip package modes; In prior art, carrier band module needs two end points of two non contact metal contacts by manual welding Ka Jinei RFID antenna to be connected simultaneously, and difficulty is large, and production efficiency is low, connective stability is poor, easily come off, and serviceable life is shorter, cannot application demand be met.The multilayer wiring formula manifold type double-interface card carrier band module embodiments provided in the utility model embodiment, for above-mentioned technical matters, propose to use metallization via hole to realize the electrical connection at carrier band front and the back side, be in the carrier band back side chip can directly with the electrode film lamella being in conplane pad and being connected to be connected to carrier band front, both flip-chip mode packaged chip can be adopted by pad, also conventional fly line bonding pattern or other various chip package mode packaged chips can be adopted, wide accommodation; Meanwhile, utilize RFID coil layer to mate with tuning capacitance layer, can be of coupled connections with the RFID antenna in card base, no longer need carrier band module and card base to carry out human weld, production efficiency is higher, can realize extensive full-automatic production.
Concrete, shown in Figure 1, the multilayer wiring formula manifold type double-interface card carrier band module embodiments being applicable to various chips encapsulation mode provided in the utility model embodiment, comprising:
Carrier band basic unit 1, electrode film lamella 2, tuning capacitance layer 3, radio frequency discrimination RFID coil layer 4, weldering 5 dish and via hole 6.
Electrode film lamella 2, tuning capacitance layer 3, carrier band basic unit 1, RFID coil layer 4 and pad 5 can be a kind of two-sided integral material covering metal.
The one side of carrier band basic unit 1 is carrier band module front, the another side of carrier band basic unit 1 is carrier band module backside, electrode film lamella 2 and tuning capacitance layer 3 in the same plane, be positioned at carrier band basic unit front, RFID coil layer 4 and pad 5 in the same plane, be positioned at the carrier band basic unit back side.Electrode film lamella is used for and read-write implement carries out the transmission of contact data; RFID coil layer is mated with tuning capacitance layer, for adjusting the non-contact data transmission frequency of carrier band module.
Via hole through hole metallization process, for the electrical connection of the pad of the electrode film lamella and carrier band module backside that realize carrier band module front; Via hole is the blind hole from pad to electrode film lamella, or via hole is the through hole got through to electrode film lamella from pad.
When via hole is blind hole, namely electrode diaphragm does not have hole, shown in Figure 2, be the schematic diagram in carrier band module front, carrier band module front central authorities are electrode film lamella 2, and electrode film lamella 2 meets respective standard, around distribution tuning capacitance layer 3 around electrode film lamella 2; When via hole is through hole, electrode film lamella is porose, shown in Figure 3, it is the schematic diagram in carrier band module front, the front central authorities of carrier band module are for having the electrode film lamella 2 of via hole 6, and electrode film lamella 2 meets respective standard, around distribution tuning capacitance layer 3 around electrode film lamella 2; Accordingly, shown in Figure 4, be the structural representation of the carrier band basic unit 1 with via hole 6.
Shown in Figure 5, be the schematic diagram of carrier band module backside, pad 6 is arranged according to the Pin locations of chip, and wherein, zone line 7 can place two interface chip; In embodiments more of the present utility model, pad 5 can comprise the first pad 5-1, the second pad 5-2, the 3rd pad 5-3 and the 4th pad 5-4, then via hole can comprise the first via hole 6-1, the second via hole 6-2 and the 3rd via hole 6-3;
First via hole 6-1 is on the first pad 5-1, and the second via hole 6-2 is on the second pad 5-2, and the 3rd via hole 6-3 is on the 3rd pad 5-3; First pad 5-1 5-8 altogether, can determine concrete number according to actual conditions, each first pad 5-1 corresponds respectively to one group of first via hole 6-1, and each first pad 5-1 is connected to metal contact blocks different on electrode diaphragm by the first via hole 6-1; Second pad 5-2 can correspond to one group of second via hole 6-2; 3rd pad 5-3 can correspond to one group of the 3rd via hole 6-3.
Second pad 5-2 is connected to the outer end points of RFID coil layer, 4th pad 5-4 is connected to the interior end points of RFID coil layer, 4th pad 5-4 does not have via hole, and the second pad 5-2 to be connected to the same metal contact block on electrode diaphragm by the 3rd via hole 6-3 by the second via hole 6-2 and the 3rd pad 5-3.
Concrete, each group the first via hole 6-1 connects the corresponding contact block of the electrode film lamella 2 in carrier band module front respectively, realizes the electrode film lamella 2 in carrier band module front and the electrical connection of the pad 5 of carrier band module backside; One group of second via hole 6-2 makes the corresponding contact block of the electrode film lamella 2 of carrier band front module realize being electrically connected with the second pad 5-2 of the outer end points of RFID coil layer 4 of carrier band module backside; One group of the 3rd via hole 6-3 makes the corresponding contact block of the electrode film lamella 2 in carrier band module front realize being electrically connected with the 3rd pad 5-3 of carrier band module backside.By the second via hole 6-2 and the 3rd via hole 6-3, the 3rd pad 5-3, the outer end points second pad 5-2 of RFID coil layer 4 and the 3rd pad 5-3 is connected in one.3rd pad 5-4 is connected to the interior end points of RFID coil layer 4.Then tuning capacitance layer 3 can mate mutually with RFID coil layer 4, reaches the design frequency of the contactless RFID label tag required for carrier band module of manifold type double-interface card.
Two interface chip is placed in the zone line 7 at the carrier band back side.The position of each first pad 5-1, the 3rd pad 5-3, the 4th pad 5-4 is determined according to the requirement of each Pin locations of used two interface chips and each metal contact block of electrode film lamella 2.Each first pad 5-1 is used for contact pin corresponding to two interface chip respectively and realizes being electrically connected, by the first via hole 6-1 connecting electrode membrane layer 2, two interface chip is connected with extraneous read-write implement contact, carries out data transmission, meet the function of contact IC card.The contact interface of double-interface card meets the ISO/IEC7816 standard of Contact Type Ic Card.
3rd pad 5-3 and the 4th pad 5-4 realizes being electrically connected with 2 noncontact pins of two interface chip, and the non-contact interface of double-interface card meets ISO/IEC15693 standard or ISO11784/ISO11785 standard.
In embodiments more of the present utility model, according to via diameter, the quantity of one group of via hole is 1-5, and the quantity of via diameter and one group of via hole is inverse ratio, and namely via diameter is less, and number of vias is more, to increase the electrical connection stability of pad and electrode film lamella; Via diameter can be the value within the scope of 0.1mm-2mm.
See shown in Fig. 6 and Fig. 7, be two kinds of versions of via hole 6.Fig. 6 is the blind hole after hole metallization process, and Fig. 7 is the through hole after hole metallization process.The upper metal level (electrode film lamella) 2 of coated metal 8 connecting hole on hole wall and lower metal layer (pad) 5.
In embodiments more of the present utility model, via hole 6 can adopt machine die to process or laser-engraving technique is processed or other conventional via hole technology processing.
In embodiments more of the present utility model, chip can adopt down encapsulation mode to be connected with pad, or chip can adopt fly line bonding pattern and other chip package patterns to be connected with pad.
The packaged type prioritizing selection of carrier band module is convenient and swift, the flip-chip mode of function admirable, see shown in Fig. 8 and Fig. 9, wherein Fig. 8 is flip-chip mode plane structure chart, Fig. 9 is flip-chip mode cross section structure figure, two interface chip can be upside down in carrier band module, namely each pin 9 of chip inwardly, and the conductor 10 printed by solder(ing) paste with each pad 5 on carrier band module backside or other conductor 10 realize being electrically connected.
Simultaneously, two interface chip in the utility model embodiment and the encapsulation mode of carrier band module are also suitable for conventional fly line bonding pattern, see shown in Figure 10 and Figure 11, wherein Figure 10 is fly line bonding pattern plane structure chart, Figure 11 is fly line bonding pattern cross section structure figure, two interface chip can be placed in carrier band module by forward, and namely each pin 9 of chip outwardly, and each pin of chip 9 uses gold thread 11 to be connected with each pad 5.Shown in Figure 12, also need after fly line bonding to carry out plastic molding package, use the packagings 12 such as UV glue, plastics, pottery or rubber chip, gold thread 11 and pad 5 to be sealed.
In addition, in embodiments more of the present utility model, electrode film lamella and tuning capacitance can be the metal that thickness is identical; RFID coil layer and pad can be the metal that thickness is identical.
In embodiments more of the present utility model, the material of carrier band basic unit can comprise one or more the combination in FR-4 material, CEM-3 material, CEM-1 material, 94HB material, 94VO material, polyvinylchloride, polycarbonate, acrylonitrile-butadiene-styrene copolymer ABS, polyethylene terephtalate, polyethylene terephthalate-1,4-CHDM ester PETG, polyimide PI.
The utility model embodiment adopts metallized blind hole or through hole to realize the electrical connection of carrier band front electrode membrane layer and carrier band backside pads, chip pin is directly connected connection that namely pad can realize chip and electrode film lamella, technique is simple, it also avoid the gap bridge of RFID coil layer like this, both flip-chip mode packaged chip can be adopted, also can adopt conventional fly line bonding pattern packaged chip or other various chip package patterns, accommodation is wider.
Simultaneously, tuning capacitance layer, avoid external capacitor, the non-contact data transmission frequency of RFID coil layer and tuning capacitance layer Matching and modification carrier band module, make the contactless module of the contactless module of carrier band module and base card can by being of coupled connections, namely the carrier band module in the utility model embodiment no longer needs directly to be connected with the RFID antenna layer in card base, and the line avoided between carrier band chip with card base is connected, and production efficiency is higher.
Thus, the utility model embodiment can realize large-scale full-automatic production, not only be suitable for read write line and the using method of existing Contact Type Ic Card and contactless card completely, and the encapsulation of two interface chip and carrier band module both can adopt conventional fly line bonding pattern, the flip-chip mode having more superior function can also be adopted, adapt to current various chip encapsulating device, manufacture craft is simple, cost is low, production efficiency is high, quality stability is good, can meet the market demand of double-interface card.
It should be noted that, in this instructions, each embodiment adopts the mode of going forward one by one to describe, and what each embodiment stressed is the difference with other embodiments, between each embodiment identical similar portion mutually see.
Also it should be noted that, in this article, the such as relational terms of first and second grades and so on is only used for an entity or operation to separate with another entity or operational zone, and not necessarily requires or imply the relation that there is any this reality between these entities or operation or sequentially.And, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thus make to comprise the process of a series of key element, method, article or equipment and not only comprise those key elements, but also comprise other key elements clearly do not listed, or also comprise by the intrinsic key element of this process, method, article or equipment.When not more restrictions, the key element limited by statement " comprising ... ", and be not precluded within process, method, article or the equipment comprising described key element and also there is other identical element.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the utility model.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein when not departing from spirit or scope of the present utility model, can realize in other embodiments.Therefore, the utility model can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (9)
1. a multilayer wiring formula manifold type double-interface card carrier band module, is characterized in that, comprising:
Carrier band basic unit, electrode film lamella, tuning capacitance layer, radio frequency discrimination RFID coil layer, pad and via hole;
Described electrode film lamella, described tuning capacitance layer, described carrier band basic unit, described RFID coil layer and described pad are a kind of two-sided integral material covering metal;
The one side of described carrier band basic unit is described carrier band module front, the another side of described carrier band basic unit is described carrier band module backside, described electrode film lamella and described tuning capacitance layer are positioned at described carrier band basic unit front, and described RFID coil layer and described pad are positioned at the described carrier band basic unit back side;
Described pad is arranged according to the Pin locations of chip;
Described via hole through hole metallization process, for the electrical connection of the described pad of the described electrode film lamella and described carrier band module backside that realize described carrier band module front;
Described electrode film lamella is used for carrying out the transmission of contact data;
Described RFID coil layer is mated with described tuning capacitance layer, for adjusting the non-contact data transmission frequency of described carrier band module.
2. multilayer wiring formula manifold type double-interface card carrier band module according to claim 1, is characterized in that,
Described pad comprises the first pad, the second pad, the 3rd pad and the 4th pad, and described via hole comprises the first via hole, the second via hole and the 3rd via hole;
Described first via hole is on described first pad, and described second via hole is on described second pad, and described 3rd via hole is on described 3rd pad;
Described second pad is connected to the outer end points of described RFID coil layer, described 4th pad is connected to the interior end points of described RFID coil layer, described second pad to be connected to the same metal contact block on described electrode diaphragm by described 3rd via hole by described second via hole and described 3rd pad, described first pad is connected to other metal contact blocks on described electrode diaphragm by described first via hole.
3. multilayer wiring formula manifold type double-interface card carrier band module according to claim 2, it is characterized in that, described first pad 5-8 altogether, each described first pad corresponds respectively to the first via hole described in a group, and each described first pad is connected to metal contact blocks different on described electrode diaphragm by described first via hole; Described second pad is corresponding to the second via hole described in a group; Described 3rd pad is corresponding to the 3rd via hole described in a group.
4. multilayer wiring formula manifold type double-interface card carrier band module according to claim 3, it is characterized in that, according to via diameter, the quantity of one group of via hole is 1-5, the quantity of described via diameter and described one group of via hole is inverse ratio, to increase the electrical connection stability of described pad and described electrode film lamella.
5. multilayer wiring formula manifold type double-interface card carrier band module according to claim 4, it is characterized in that, described via diameter is 0.1mm-2mm.
6. the multilayer wiring formula manifold type double-interface card carrier band module according to any one of claim 1-5, it is characterized in that, described via hole is the blind hole from described pad to described electrode film lamella, or described via hole is the through hole got through to described electrode film lamella from described pad.
7. multilayer wiring formula manifold type double-interface card carrier band module according to claim 6, is characterized in that, described via hole adopts machine die processing or laser-engraving technique processing or conventional via hole technology to process.
8. multilayer wiring formula manifold type double-interface card carrier band module according to claim 1, is characterized in that, described chip adopts encapsulation mode to be connected with described pad, or described chip adopts fly line bonding pattern to be connected with described pad.
9. multilayer wiring formula manifold type double-interface card carrier band module according to claim 1, it is characterized in that, described electrode film lamella and described tuning capacitance are the metal that thickness is identical; Described RFID coil layer and described pad are the metal that thickness is identical.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420675215.9U CN204496538U (en) | 2014-11-06 | 2014-11-06 | A kind of multilayer wiring formula manifold type double-interface card carrier band module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420675215.9U CN204496538U (en) | 2014-11-06 | 2014-11-06 | A kind of multilayer wiring formula manifold type double-interface card carrier band module |
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| CN204496538U true CN204496538U (en) | 2015-07-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420675215.9U Expired - Fee Related CN204496538U (en) | 2014-11-06 | 2014-11-06 | A kind of multilayer wiring formula manifold type double-interface card carrier band module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204496538U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016070698A1 (en) * | 2014-11-06 | 2016-05-12 | 北京豹驰智能科技有限公司 | Multilayer wiring coupling dual interface card carrier-band module |
| CN106486457A (en) * | 2015-09-02 | 2017-03-08 | 英飞凌科技股份有限公司 | chip carrier, device and method |
| CN106599979A (en) * | 2017-01-16 | 2017-04-26 | 中电智能卡有限责任公司 | Support plate-type CSP mounted-inversed dual-interface module and intelligent card comprising the same |
-
2014
- 2014-11-06 CN CN201420675215.9U patent/CN204496538U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016070698A1 (en) * | 2014-11-06 | 2016-05-12 | 北京豹驰智能科技有限公司 | Multilayer wiring coupling dual interface card carrier-band module |
| US9996790B2 (en) | 2014-11-06 | 2018-06-12 | Beijing Basch Smartcard Co., Ltd. | Multilayer wiring coupling dual interface card carrier-band module |
| CN106486457A (en) * | 2015-09-02 | 2017-03-08 | 英飞凌科技股份有限公司 | chip carrier, device and method |
| US10163820B2 (en) | 2015-09-02 | 2018-12-25 | Infineon Technologies Ag | Chip carrier and method thereof |
| CN106486457B (en) * | 2015-09-02 | 2020-03-13 | 英飞凌科技股份有限公司 | Chip carrier, device and method |
| CN106599979A (en) * | 2017-01-16 | 2017-04-26 | 中电智能卡有限责任公司 | Support plate-type CSP mounted-inversed dual-interface module and intelligent card comprising the same |
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