CN204441317U - A kind of light-emitting diode of double mirror structure - Google Patents
A kind of light-emitting diode of double mirror structure Download PDFInfo
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- CN204441317U CN204441317U CN201520083239.XU CN201520083239U CN204441317U CN 204441317 U CN204441317 U CN 204441317U CN 201520083239 U CN201520083239 U CN 201520083239U CN 204441317 U CN204441317 U CN 204441317U
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Abstract
A light-emitting diode for double mirror structure, belongs to photoelectron technical field, the permanent substrate that back electrode sets gradually, metal bonding layer, reflector, P face, epitaxial loayer, reflector, N face and main electrode; Reflector, P face comprises the SiO with some through holes of the P-GaP current extending side being arranged on epitaxial loayer
2conduction aperture layer, in described through hole and SiO
2between conduction aperture layer and metal bonding layer, evaporation has specular layer; Reflector, N face comprises the SiO be arranged on the N-AlGaInP roughened layer of epitaxial loayer
2deielectric-coating, at SiO
2be provided with specular layer above deielectric-coating, specular layer is formed with expansion electrode and is electrically connected.Product through multiple reflections, reflect from luminous zone effusion, simultaneously below main electrode due to the making of deielectric-coating, define schottky junction, thus reduce the invalid injection of electric current, effectively promote the light extraction efficiency of light-emitting diode.
Description
Technical field
The utility model belongs to photoelectron technical field, particularly the manufacturing technology field of AlGaInP quaternary series LED.
Background technology
Quaternary system AlGaInP is a kind of semi-conducting material with direct broad-band gap, has been widely used in the preparation of multiple opto-electronic device.Due to material emission wave band can the ruddiness of covering visible light to yellow green wave band, the visible ray high brightness LED made thus is subject to extensive concern.Quaternary system AlGaInP ruddiness high brightness LED is a large amount of for many aspects such as open air display, traffic lights, auto lamps.Relative to the AlGaInP LED chip of ordinary construction, high brightness AlGaInP chip adopts bonding technology to realize substrate displacement, the silicon substrate (thermal conductivity of silicon is about 1.5W/K.cm) using good in thermal property replaces gallium arsenide substrate (thermal conductivity of GaAs is about 0.8W/K.cm), chip has more low-heat resistance, heat dispersion is better, is conducive to improving reliability.To reduce in the total reflection of chip and encapsulating material interface get optical efficiency, also at some surface texture structures of chip manufacturing to overcome light.In addition, P-GaP plates reflector, higher than growing DBR speculum light extraction efficiency in common ruddiness epitaxial loayer.Reflector is made up of the deielectric-coating of low-refraction and metal level, and deielectric-coating produces conductive hole by photoetching process, and specular layer forms electricity contact by conductive hole with P-GaP.Traditional reflection layer structure is individual layer, it is the speculum producing high reflectance in the P face of epitaxial structure, but due to the cause that N surface current expansion effect is poor, N face needs to arrange larger electrode and carries out auxiliary current expansion, shading will certainly be caused, electrode can absorb a part of light simultaneously, causes light extraction efficiency on the low side.
Utility model content
The utility model is intended to propose at the double mirror structure high brightness LED all making reflector in N face and P face.
The light-emitting diode of the utility model double mirror structure be included in back electrode sets gradually permanent substrate, metal bonding layer, reflector, P face, epitaxial loayer, reflector, N face and main electrode;
Described epitaxial loayer comprises P-GaP current extending, resilient coating, P-AlGaInP limiting layer, MQW multiple quantum well active layer, N-AlGaInP limiting layer, N-AlGaInP current extending, N-AlGaInP roughened layer and patterned N-GaAs ohmic contact layer;
N-GaAs ohmic contact layer is electrically connected with expansion electrode layer;
Be characterized in: reflector, described P face comprises the SiO with some through holes of the P-GaP current extending side being arranged on epitaxial loayer
2conduction aperture layer, in described through hole and SiO
2between conduction aperture layer and metal bonding layer, evaporation has specular layer;
Reflector, described N face comprises the SiO be arranged on the N-AlGaInP roughened layer of epitaxial loayer
2deielectric-coating, at SiO
2be provided with specular layer above deielectric-coating, specular layer is formed with expansion electrode and is electrically connected;
Described main electrode is made up of barrier layer and bonding wire layer, and barrier layer is arranged on above specular layer, and bonding wire layer is arranged on above barrier layer.
Due to above structure, so the utility model light-emitting diode can ensure that the light sent from active area would not absorb by N face electrode, come back in semiconductor by the reflection in reflector, N face, through multiple reflections, reflect and overflow from luminous zone, simultaneously below main electrode due to the making of deielectric-coating, define schottky junction, thus reduce the invalid injection of electric current, effectively improve the light extraction efficiency of light-emitting diode.
In addition, the thickness of the specular layer in reflector, P face described in the utility model is 100 ~ 300nm.This thickness ensures the evenness on surface, blocked uply affects evenness, and then affects reflectivity.
The thickness of the specular layer in reflector, described N face is 100 ~ 300nm.This thickness ensures the evenness on surface, blocked uply affects evenness, and then affects reflectivity.
The thickness on the barrier layer in electrode reflector, N face is 50 ~ 100nm.Have good stability when high temperature, stop the counterdiffusion of levels material, this thickness can ensure the reliability of electrode, blocked uply affects electrode bonding wire.
The thickness of described patterned N-GaAs ohmic contact layer is 40 ~ 80nm, and this thickness can not cause the extinction of N-GaAs.
The thickness of described P-GaP current extending is 2 ~ 5 μ nm, and this thickness ensures good extending transversely of electric current.
Accompanying drawing explanation
Fig. 1 is the structural representation of the epitaxial wafer in manufacturing process.
Fig. 2 is the structural representation of the permanent substrate in manufacturing process.
Fig. 3 is the structural representation of the utility model finished product.
Fig. 4 is bowing to schematic diagram of Fig. 3.
Embodiment
One, the utility model manufacturing step is as follows:
1, as shown in Figure 1, MOCVD device is utilized to grow transition zone 102, N-GaInP cutoff layer 103, N-GaAs ohmic contact layer 104, N-AlGaInP roughened layer 105, N-AlGaInP current extending 106, N-AlGaInP limiting layer 107, MQW multiple quantum well active layer 108, P-AlGaInP limiting layer 109, resilient coating 110, P-GaP current extending 111 successively on an interim GaAs substrate 101.
Wherein N-GaAs ohmic contact layer 104 preferred thickness 60nm, the impurity element mixed is Si, and doping content is 8 × 10
18cm
-3above, to ensure that there is good electricity contact in N face.
P-GaP current extending 111 preferred thickness 3000nm, the impurity element mixed is Mg, and doping content is 7 × 10
18cm
-3above, to ensure that there is good electricity contact in P face.
2, utilize 511 cleaning fluid cleaning P-GaP current extendings 111, P-GaP current extending 111 deposits the SiO of 100nm
2deielectric-coating, by spin coating positive photoresist, make mask pattern through overexposure, development, recycling volume ratio is the NH of 10:1
4f:H
2o mixed solution, at SiO
2conduction aperture layer 112 etches medium holes.
3, electron beam evaporation plating mode is adopted, at SiO
2conduction aperture layer 112 medium holes in and SiO
2conduction aperture layer 112 successively makes the Al layer that thickness is AuZn and 300nm of 200nm, and this AuZn/Al together form specular layer 113.By SiO
2conduction aperture layer 112 together constitutes reflector, P face with AuZn/Al specular layer 113.
Again through 460 DEG C of annealing 20min, make SiO
2in the medium holes of conduction aperture layer 112, AuZn forms good electricity contact with P-GaP current extending 111.
4, on specular layer 113, adopt electron beam evaporation plating mode to make thickness is that the Au of 2000nm is as metal bonding layer 114.
5, as shown in Figure 2, permanent Si substrate 201 adopting electron beam evaporation plating mode to make thickness is that the Au of 2000nm is as metal bonding layer 202.
6, as shown in Figure 3, the goods that goods step 4 made and step 5 are made immerse in acetone soln, and bonded layer 114 is relative with bonded layer 202, carry out ultrasonic cleaning 10min, under 350 DEG C of conditions, under 6000kg External Force Acting, through 10min, both are bonded to together.
7, utilize mechanical lapping mode first to be removed by the GaAs substrate 101 of the semi-products after bonding to residue about 20 μm thick, then be the NH of 1:7 by volume ratio
4oH:H
2o
2solution reaction 10min, chemical corrosion stops on GaInP cutoff layer 103.
8, by the positive glue of spin coating on N-GaAs ohmic contact layer 104, after photoetching development, then the H that volume ratio is 1:2:2 is immersed
3pO
4: H
2o
2: H
2o mixed solution, etches patterned N-GaAs ohmic contact layer 104.
9, volume ratio is adopted to be the H of 1:1:7
3pO
4: H
2sO
4: CH
3cOOH mixed solution wet method makes N-AlGaInP roughened layer 105 in patterned N-GaAs ohmic contact layer 104 periphery.
10, on patterned N-GaAs ohmic contact layer 104, adopt the mode evaporation thickness of hot evaporation to be the AuGe alloy material of 200nm, then through gluing, photoetching, adopt golden etching solution to etch expansion electrode 204 after the techniques such as development.Carry out annealing 20min process by 360 DEG C of nitrogen atmosphere annealing furnaces, make expansion electrode 204 and N-GaAs ohmic contact layer 104 form good electricity and contact.
11, reflector and main electrode is made:
Semi-products are immersed acetone soln ultrasonic cleaning 10min, then by plasma enhanced chemical vapor deposition method (PECVD), on N-AlGaInP roughened layer 105, deposit the SiO of 100nm
2film, makes deielectric-coating figure by photolithographic procedures, and recycling volume ratio is the NH of 10:1
4f:H
2o mixed solution is by the SiO in region, luminous zone
2etch away, photoresist is removed, forms SiO with this
2deielectric-coating 205.
Utilize photolithographic procedures, spin coating negative photoresist, photoetching, develop, be spin-dried for, then carry out plasma and play glue, adopt the mode that electron beam cold is steamed, at SiO
2deielectric-coating 205 surface forms the Al specular layer 206 that thickness is 200nm, then on Al specular layer 206, produce Ti or the Pt barrier layer 207 of 80nm and the Au bonding wire layer 208 of 3 μm.And Al specular layer 206 is formed electrical connection with expansion electrode 204.
Above SiO
2media coating 205 forms reflector with Al specular layer, and barrier layer 207 forms main electrode with bonding wire layer 208.
12, the mode adopting electron beam hot evaporation at Si substrate 201 back side respectively evaporation thickness is the Ti of 50nm, and thickness is the Pt of 50nm and thickness is the Au of 100nm, and namely Ti/Pt/Au back electrode 203 in Fig. 2 and Fig. 3, namely completes the making of device.
Two, the product structure feature made:
As shown in Figure 3,4, back electrode 203 is disposed with permanent substrate 201, metal bonding layer 202, specular layer 113, SiO
2conduction aperture layer 112, P-GaP current extending 111, resilient coating 110, P-AlGaInP limiting layer 109, MQW multiple quantum well active layer 108, N-AlGaInP limiting layer 107, N-AlGaInP current extending 106, N-AlGaInP roughened layer 105 and patterned N-GaAs ohmic contact layer 104.
N-AlGaInP roughened layer 105 is provided with SiO
2deielectric-coating 205, at SiO
2specular layer 206, barrier layer 207 and bonding wire layer 208 is disposed with above deielectric-coating 205.Al specular layer 206 forms electrical connection with expansion electrode 204.
When making in addition, the media coating SiO in reflector, P face and reflector, N face
2thickness all can design to best optical thickness.
The utility model is owing to having double mirror structure, can ensure that the light sent from active area would not absorb by N face electrode, come back in semiconductor by the reflection in reflector, N face, through multiple reflections, reflect and overflow from luminous zone, simultaneously below main electrode due to the making of deielectric-coating, define schottky junction, thus reduce the invalid injection of electric current, effectively improve the light extraction efficiency of light-emitting diode.
Claims (6)
1. a light-emitting diode for double mirror structure, be included in back electrode sets gradually permanent substrate, metal bonding layer, reflector, P face, epitaxial loayer, reflector, N face and main electrode;
Described epitaxial loayer comprises P-GaP current extending, resilient coating, P-AlGaInP limiting layer, MQW multiple quantum well active layer, N-AlGaInP limiting layer, N-AlGaInP current extending, N-AlGaInP roughened layer and patterned N-GaAs ohmic contact layer;
N-GaAs ohmic contact layer is electrically connected with expansion electrode layer;
It is characterized in that: reflector, described P face comprises the SiO with some through holes of the P-GaP current extending side being arranged on epitaxial loayer
2conduction aperture layer, in described through hole and SiO
2between conduction aperture layer and metal bonding layer, evaporation has specular layer;
Reflector, described N face comprises the SiO be arranged on the N-AlGaInP roughened layer of epitaxial loayer
2deielectric-coating, at SiO
2be provided with specular layer above deielectric-coating, specular layer is formed with expansion electrode and is electrically connected;
Described main electrode is made up of barrier layer and bonding wire layer, and barrier layer is arranged on above specular layer, and bonding wire layer is arranged on above barrier layer.
2. the light-emitting diode of double mirror structure according to claim 1, is characterized in that the thickness of the specular layer in reflector, described P face is 100 ~ 300nm.
3. the light-emitting diode of double mirror structure according to claim 1, is characterized in that the thickness of the specular layer in reflector, described N face is 100 ~ 300nm.
4. the light-emitting diode of double mirror structure according to claim 1 or 3, is characterized in that the thickness on the barrier layer in electrode reflector, described N face is 50 ~ 100nm.
5. the light-emitting diode of double mirror structure according to claim 1, is characterized in that the thickness of described patterned N-GaAs ohmic contact layer is 40 ~ 80nm.
6. the light-emitting diode of double mirror structure according to claim 1, is characterized in that the thickness of described P-GaP current extending is 2 ~ 5 μ nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520083239.XU CN204441317U (en) | 2015-02-06 | 2015-02-06 | A kind of light-emitting diode of double mirror structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520083239.XU CN204441317U (en) | 2015-02-06 | 2015-02-06 | A kind of light-emitting diode of double mirror structure |
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| Publication Number | Publication Date |
|---|---|
| CN204441317U true CN204441317U (en) | 2015-07-01 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681678A (en) * | 2015-02-06 | 2015-06-03 | 扬州乾照光电有限公司 | LED (light emitting diode) with dual-reflector structure and manufacturing method of LED with dual-reflector structure |
-
2015
- 2015-02-06 CN CN201520083239.XU patent/CN204441317U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681678A (en) * | 2015-02-06 | 2015-06-03 | 扬州乾照光电有限公司 | LED (light emitting diode) with dual-reflector structure and manufacturing method of LED with dual-reflector structure |
| CN104681678B (en) * | 2015-02-06 | 2017-08-25 | 扬州乾照光电有限公司 | The light emitting diode and its manufacture method of a kind of double mirror structure |
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|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |