CN204434723U - The surface recombination modified equipment of a kind of ionitriding and arc ion plating - Google Patents
The surface recombination modified equipment of a kind of ionitriding and arc ion plating Download PDFInfo
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- CN204434723U CN204434723U CN201520060236.4U CN201520060236U CN204434723U CN 204434723 U CN204434723 U CN 204434723U CN 201520060236 U CN201520060236 U CN 201520060236U CN 204434723 U CN204434723 U CN 204434723U
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Abstract
The surface recombination modified equipment of a kind of ionitriding and arc ion plating, belong to material surface modifying technology field, in this equipment, chamber bottom is movably installed with rotation platform, rotation platform lower end is connected with grid bias power supply negative pole, and grid bias power supply positive pole is connected with vacuum chamber; Vacuum chamber wall is provided with hot-wire device and plasma evaporation source, the negative pole of hot-wire device is connected with DC power cathode, and DC power anode is connected with vacuum chamber; Use this equipment to be heated up by workpiece heat under vacuum degree condition, start hot-wire device, pass into N
2and H
2, cause plasma nitridation, obtain nitrided case, prepare ganoine thin film layer by arc ion plating.The equipment of this invention increases the number of electrons of discharge space and the probability of collision of electronics and gas molecule by hot-wire device, the technique of ionitriding and arc ion plating is carried out continuously under the same air pressure conditions of same equipment, the method can obtain stable hardness zone of transition, improves inter-layer bonding force.
Description
Technical field
The invention belongs to material surface modifying technology field, particularly the surface recombination modified equipment of a kind of nitriding and plated film.
Background technology
At present, arc ion plating membrane technique is prepared the hard films such as TiC, TiN, TiAlN and TiCN with its high ionization level, high deposition rate and be widely used in preparing hard protection rete, particularly arc ion plating membrane technique and is used widely already on rapid steel and hard alloy substrate.Cutter after coating film treatment has excellent wear resisting property and increases the service life, and makes film matrix system can have good bonding force this is because the hardness (500-900HV) of body material under supply of material state itself is high enough to the ganoine thin film that can carry hardness very high (1500-2500HV) and shows excellent over-all properties.But for die steel, the structure iron particularly material such as stainless steel of base material lower hardness, directly prepare ganoine thin film on its surface, " eggshell effect " can be there is because there is larger difference of hardness between film base, the hard films of matrix surface easily produces in process under arms and comes off and peeling.
In thermo-chemical treatment and plated film compounding technology, nitriding and PVD compounding technology all have very large potentiality improving workpiece surface hardness and improve in film-substrate cohesion etc., first ionitriding is carried out before adopting plated film, the non-deformability of rete not only can be made to improve, and owing to defining a more stable hardness zone of transition under rete, rete can be made better to the stress distribution continuity of matrix, therefore can improve the mechanics drag of film-substrate cohesion and rete relative to non-nitriding workpiece.
But, adopt conventional ion nitriding and coating technique Combined Processing, need to carry out in two devices respectively, because the operating air pressure of conventional ion nitriding is 133Pa ~ 1330Pa, and coating process is many carries out under 0.1 ~ 10Pa air pressure conditions, be difficult to process continuously, be also unfavorable for improving film-substrate cohesion.
Utility model content
The object of this invention is to provide the surface recombination modified Apparatus and method for of a kind of ionitriding and arc ion plating, this equipment is by heating after the heated filament energising of hot-wire device, thus inspire electronics, increase the number of electrons of discharge space, thus add the probability of collision of electronics and gas molecule, promote the ionization of gas and the generation of active group, make gas can maintain stable glow discharge on the order of magnitude that vacuum tightness is 0.1-10Pa, the technique of ionitriding and arc ion plating is carried out continuously under the same order of magnitude air pressure conditions of same equipment, the method can obtain stable hardness zone of transition, improve inter-layer bonding force.
The technical scheme that the present invention is adopted for achieving the above object is: the surface recombination modified equipment of a kind of ionitriding and arc ion plating, comprise vacuum chamber, it is characterized in that, described chamber bottom is movably installed with rotation platform, place work piece on rotation platform, rotation platform is connected with workpiece bias power cathode, and rotation platform and vacuum chamber insulate, and workpiece bias positive source is connected with vacuum chamber; Described vacuum chamber wall is installed with hot-wire device, and the negative pole of hot-wire device is connected with heated filament grid bias power supply negative pole, and heated filament grid bias power supply positive pole is connected with vacuum chamber, and hot-wire device and vacuum chamber insulate; Arc plasma evaporation source is installed in described vacuum chamber; Described vacuum chamber is provided with vacuum system, described vacuum chamber wall is also provided with chamber air inlet port.
Described hot-wire device adopts heated filament to be connected on direct supply two end electrodes, is provided with hot-wire device's switch in the circuit of hot-wire device.
Rotation platform insulation covering is installed between described rotation platform and vacuum chamber, hot-wire device's insulation covering is installed between described hot-wire device and vacuum chamber.
Described vacuum chamber inwall is also provided with well heater.
Device of the present invention has following beneficial effect:
(1) equipment of the duplex surface modification of ionitriding provided by the present invention and plasma film coating, achieve the technique of arc ion plating after ionitriding on one device, equipment continuity is higher, easy to use, and production efficiency is high;
(2) the surface recombination modified method of ionitriding provided by the present invention and arc ion plating, in the ionitriding stage, passes into N
2a certain amount of H is added while ionization
2, H
2add to reduce and produce the intensity of activation of activated nitrogen atom, increase the quantity of activated nitrogen atom, improve the efficiency of nitriding;
(3) hardness applying its surface of workpiece that this equipment and composite modifying method prepare is improved significantly, compared with direct arc ion film plating, hardness improves 45%-56%, and define stable hardness zone of transition at workpiece surface, improve the mechanics drag of film-substrate cohesion and rete, ganoine thin film layer difficult drop-off or stripping.
Accompanying drawing explanation
Fig. 1 is the structural representation of the surface recombination modified equipment of a kind of ionitriding and arc ion plating.
In figure: 1 heated filament grid bias power supply, 2 arc plasma evaporation sources, 3 well heaters, 4 vacuum systems, 5 workpiece bias power supplys, 6 grid bias power supply switches, 7 rotation platform insulation coverings, 8 rotation platforms, 9 vacuum chambers, 10 chamber air inlet ports, 11 workpiece, 12 hot-wire device, 13 hot-wire device's switches, 14 hot-wire device's insulation coverings
Embodiment
Below in conjunction with accompanying drawing, the present invention will be further described, but the present invention is not limited to specific embodiment.
Embodiment 1
A kind of ionitriding as shown in Figure 1 and the surface recombination modified equipment of arc ion plating, comprise vacuum chamber 9, chamber bottom is movably installed with rotation platform 8, place work piece 11 on rotation platform, rotation platform lower end is stretched out vacuum chamber and is connected with grid bias power supply 5 negative pole, be provided with rotation platform insulation covering 7 between rotation platform and vacuum chamber, to reach the object that rotation platform and vacuum chamber insulate, grid bias power supply positive pole is connected with vacuum chamber, rotation platform adopts metallic substance to make, make the electromotive force of workpiece 11 equal with grid bias power supply negative pole electromotive force, and vacuum chamber outer wall ground connection, electromotive force is 0, arc plasma evaporation source 2 is installed in vacuum chamber, this evaporation source comprises cathode targets of pure metal and/or carbon etc. (specifically can with reference to disclosed patent ZL200610045720.5), can excite and produce pure metal and/or carbon ion, arc plasma evaporation source is equal with vacuum chamber electromotive force, be zero, and the electromotive force of workpiece 11 is equal with grid bias power supply negative pole electromotive force, for negative potential, therefore between arc plasma evaporation source 2 and workpiece 11, form a positive electromotive force, accelerate plasma source is deposited on workpiece 11.
Vacuum chamber wall is installed with hot-wire device 12, hot-wire device adopts heated filament to be connected on direct supply two end electrodes, hot-wire device's switch 13 is provided with in the circuit of hot-wire device, the negative pole of hot-wire device is connected with direct supply 1 negative pole, DC power anode is connected with vacuum chamber, hot-wire device's insulation covering 14 is installed between hot-wire device and vacuum chamber, to reach the object that hot-wire device and vacuum chamber insulate, vacuum chamber outer wall ground connection, electromotive force is 0, and hot-wire device's electromotive force is negative, negative electromotive force is formed like this between hot-wire device and vacuum chamber, heater material is generally dystectic metal, as tungsten, tantalum, molybdenum etc., its diameter is generally no more than 0.6mm, the electronics inspired after heated filament energising leaves heated filament and moves to vacuum chamber under the effect of negative potential, increase electronics and N
2or H
2the probability of collision of molecule, facilitates N
2ionization and H
2the generation of active ion, is beneficial to exciting further and producing of electronics simultaneously, improves the efficiency of ionization.
Vacuum chamber inwall is provided with well heater 3, well heater can adopt resistive heating.
Vacuum chamber outer wall is provided with vacuum system 4, vacuum system 4 adopts molecular pump to be installed on vacuum chamber outer wall, and mechanical pump is connected on molecular pump.
Vacuum chamber wall is also provided with chamber air inlet port 10, to pass into N
2and/or H
2, or reactant gases.
Embodiment 2
Adopt equipment described in embodiment 1 to carry out ionitriding and arc ion plating, comprise following concrete sequential steps:
(1) pre-treatment
Workpiece surface is carried out sanding and polishing, then ultrasonic cleaning post-drying in industrial ultrasonic cleaning machine;
(2) nitrided case is prepared
Workpiece after step (1) is processed, be placed on the rotation platform of the ionitriding of above-described embodiment 1 and the surface recombination modified equipment of arc ion plating, pure titanium is installed among equipment as cathode targets, close vacuum chamber 9, being evacuated to vacuum tightness by vacuum system 4 is 4.6 × 10
-2pa; Open rotation platform uniform rotation, start well heater 3, heated parts makes it be warming up to 300 DEG C, and start the hot-wire device 12 of nitriding, workpiece bias power supply 5 and heated filament grid bias power supply 1, the electric current arranging heated filament is 100A, and the voltage at heated filament two ends is 100V, passes into N
2flow be 50SCCM, H
2flow is 50SCCM, reaches 0.1Pa to air pressure, and arranging workpiece bias power source bias is-400V, and the bias voltage arranging heated filament grid bias power supply is-10V, N
2and H
2under workpiece bias power supply, hot-wire device's ejected electron and the acting in conjunction of heated filament grid bias power supply, ionization forms the gaseous plasma of enhanced discharge and is surrounded on workpiece surface, carry out nitriding treatment 2 hours, obtain nitrided case, close hot-wire device and heated filament grid bias power supply, stop passing into N
2and H
2, namely stop nitriding process;
(3) ganoine thin film layer is prepared
Workpiece after step (2) being processed carries out arc ion plating, keeps vacuum tightness 0.1Pa, opens arc plasma evaporation source 2, inspires titanium ion namely to the energising of the cathode targets of this pure titanium, passes into reactant gases N
2, on the nitrided case of workpiece, deposition prepares ganoine thin film layer, and depositing time is 3 hours, obtains TiN Hard Films layer.
Embodiment 3
Adopt equipment described in embodiment 1 to carry out ionitriding and arc ion plating, comprise following concrete sequential steps:
(1) pre-treatment
Workpiece surface is carried out sanding and polishing, then ultrasonic cleaning post-drying in industrial ultrasonic cleaning machine;
(2) nitrided case is prepared
Workpiece after step (1) is processed, be placed on the rotation platform of the ionitriding of above-described embodiment 1 and the surface recombination modified equipment of arc ion plating, pure titanium is installed among equipment as cathode targets, close vacuum chamber 9, being evacuated to vacuum tightness by vacuum system 4 is 4.4 × 10
-2pa; Start well heater 3, heated parts makes it be warming up to 450 DEG C, and start the hot-wire device 12 of nitriding, workpiece bias power supply 5 and heated filament grid bias power supply 1, the electric current arranging heated filament is 30A, and the voltage at heated filament two ends is 40V, passes into N
2flow be 300SCCM, H
2flow is 550SCCM, reaches 20Pa to air pressure, and arranging workpiece bias power source bias is-600V, and the bias voltage arranging heated filament grid bias power supply is-30V, N
2and H
2under workpiece bias power supply, hot-wire device's ejected electron and the acting in conjunction of heated filament grid bias power supply, ionization forms the gaseous plasma of enhanced discharge and is surrounded on workpiece surface, carry out nitriding treatment 4 hours, obtain nitrided case, close hot-wire device and heated filament grid bias power supply, stop passing into N
2and H
2, namely stop nitriding process;
(3) ganoine thin film layer is prepared
Workpiece after step (2) being processed carries out arc ion plating, keeps vacuum tightness 0.5Pa, opens arc plasma evaporation source 2, inspires titanium ion namely to the energising of the cathode targets of this pure titanium, passes into reactant gases CH
4, on the nitrided case of workpiece, deposition prepares ganoine thin film layer, and depositing time is 5 hours, obtains titanium carbide ganoine thin film layer.
Embodiment 4
Adopt equipment described in embodiment 1 to carry out ionitriding and arc ion plating, comprise following concrete sequential steps:
(1) pre-treatment
Workpiece surface is carried out sanding and polishing, then ultrasonic cleaning post-drying in industrial ultrasonic cleaning machine;
(2) nitrided case is prepared
Workpiece after step (1) is processed, be placed on the rotation platform of the ionitriding of above-described embodiment 1 and the surface recombination modified equipment of arc ion plating, pure chromium is installed among equipment as cathode targets, close vacuum chamber 9, being evacuated to vacuum tightness by vacuum system 4 is 4.2 × 10
-2pa; Start well heater 3, heated parts makes it be warming up to 350 DEG C, and start the hot-wire device 12 of nitriding, workpiece bias power supply 5 and heated filament grid bias power supply 1, the electric current arranging heated filament is 50A, and the voltage at heated filament two ends is 80V, passes into N
2flow be 70SCCM, H
2flow is 300SCCM, reaches 10Pa to air pressure, and arranging workpiece bias power source bias is-500V, and the bias voltage arranging heated filament grid bias power supply is-40V, N
2and H
2under workpiece bias power supply, hot-wire device's ejected electron and the acting in conjunction of heated filament grid bias power supply, ionization forms the gaseous plasma of enhanced discharge and is surrounded on workpiece surface, carry out nitriding treatment 5 hours, obtain nitrided case, close hot-wire device and heated filament grid bias power supply, stop passing into N
2and H
2, namely stop nitriding process;
(3) ganoine thin film layer is prepared
Workpiece after step (2) being processed carries out arc ion plating, keeps vacuum tightness 2Pa, opens arc plasma evaporation source 2, inspires chromium ion namely to the energising of the cathode targets of this pure chromium, passes into reactant gases N
2, on the nitrided case of workpiece, deposition prepares ganoine thin film layer, and depositing time is 6 hours, obtains chromium nitride ganoine thin film layer.
Embodiment 5
Adopt equipment described in embodiment 1 to carry out ionitriding and arc ion plating, comprise following concrete sequential steps:
(1) pre-treatment
Workpiece surface is carried out sanding and polishing, then ultrasonic cleaning post-drying in industrial ultrasonic cleaning machine;
(2) nitrided case is prepared
Workpiece after step (1) is processed, be placed on the rotation platform of the ionitriding of above-described embodiment 1 and the surface recombination modified equipment of arc ion plating, pure titanium is installed among equipment as cathode targets, close vacuum chamber 9, being evacuated to vacuum tightness by vacuum system 4 is 4.0 × 10
-2pa; Start well heater 3, heated parts makes it be warming up to 600 DEG C, and start the hot-wire device 12 of nitriding, workpiece bias power supply 5 and heated filament grid bias power supply 1, the electric current arranging heated filament is 20A, and the voltage at heated filament two ends is 30V, passes into N
2flow be 500SCCM, H
2flow is 1000SCCM, reaches 50Pa to air pressure, and arranging workpiece bias power source bias is-1000V, and the bias voltage arranging heated filament grid bias power supply is-50V, N
2and H
2under workpiece bias power supply, hot-wire device's ejected electron and the acting in conjunction of heated filament grid bias power supply, ionization forms the gaseous plasma of enhanced discharge and is surrounded on workpiece surface, carry out nitriding treatment 6 hours, obtain nitrided case, close hot-wire device and heated filament grid bias power supply, stop passing into N
2and H
2, namely stop nitriding process;
(3) ganoine thin film layer is prepared
Workpiece after step (2) being processed carries out arc ion plating, and maintenance vacuum tightness is 5Pa, opens arc plasma evaporation source 2, inspires titanium ion namely to the energising of the cathode targets of this pure titanium, passes into reactant gases N
2and CH
4, on the nitrided case of workpiece, deposition prepares ganoine thin film layer, and depositing time is 8 hours, obtains titanium carbonitride ganoine thin film layer.
When selecting workpiece to be rapid steel, directly prepare the hardness of TiCN ganoine thin film layer rear surface through plasma to rapid steel workpiece surface hardness, rapid steel workpiece respectively, hardness that the first ionitriding post plasma of rapid steel workpiece prepares TiCN ganoine thin film layer rear surface tests, testing the hardness value (unit HV) obtained for two groups is:
| Grouping | Workpiece | Workpiece+TiCN | Workpiece+nitriding+TiCN |
| 1 | 865 | 1083 | 1572 |
| 2 | 912 | 972 | 1516 |
Embodiment 6
Adopt equipment described in embodiment 1 to carry out ionitriding and arc ion plating, comprise following concrete sequential steps:
(1) pre-treatment
Workpiece surface is carried out sanding and polishing, then ultrasonic cleaning post-drying in industrial ultrasonic cleaning machine;
(2) nitrided case is prepared
Workpiece after step (1) is processed, be placed on the rotation platform of the ionitriding of above-described embodiment 1 and the surface recombination modified equipment of arc ion plating, pure titanium and fine aluminium are installed among equipment as cathode targets, close vacuum chamber 9, being evacuated to vacuum tightness by vacuum system 4 is 3.6 × 10
-2pa; Start well heater 3, heated parts makes it be warming up to 400 DEG C, and start the hot-wire device 12 of nitriding, workpiece bias power supply 5 and heated filament grid bias power supply 1, the electric current arranging heated filament is 80A, and the voltage at heated filament two ends is 50V, passes into N
2flow be 150SCCM, H
2flow is 700SCCM, reaches 30Pa to air pressure, and arranging workpiece bias power source bias is-700V, and the bias voltage arranging heated filament grid bias power supply is-20V, N
2and H
2under workpiece bias power supply, hot-wire device's ejected electron and the acting in conjunction of heated filament grid bias power supply, ionization forms the gaseous plasma of enhanced discharge and is surrounded on workpiece surface, carry out nitriding treatment 3 hours, obtain nitrided case, close hot-wire device and heated filament grid bias power supply, stop passing into N
2and H
2, namely stop nitriding process;
(3) ganoine thin film layer is prepared
Workpiece after step (2) being processed carries out arc ion plating, keeps vacuum tightness 10Pa, opens arc plasma evaporation source 2, inspires titanium ion and aluminum ion namely to the energising of the cathode targets of this pure titanium and fine aluminium, passes into reactant gases N
2, on the nitrided case of workpiece, deposition prepares ganoine thin film layer, and depositing time is 4 hours, obtains TiAlN ganoine thin film layer.
Claims (4)
1. the surface recombination modified equipment of an ionitriding and arc ion plating, comprise vacuum chamber (9), it is characterized in that, described chamber bottom is movably installed with rotation platform (8), place work piece (11) on rotation platform, rotation platform is connected with workpiece bias power supply (5) negative pole, and rotation platform and vacuum chamber insulate, and workpiece bias power supply (5) positive pole is connected with vacuum chamber; Described vacuum chamber wall is installed with hot-wire device (12), the negative pole of hot-wire device is connected with heated filament grid bias power supply (1) negative pole, heated filament grid bias power supply (1) positive pole is connected with vacuum chamber, and hot-wire device and vacuum chamber insulate; Arc plasma evaporation source (2) is installed in described vacuum chamber; Described vacuum chamber is provided with vacuum system (4), described vacuum chamber wall is also provided with chamber air inlet port (10).
2. the surface recombination modified equipment of a kind of ionitriding according to claim 1 and arc ion plating, it is characterized in that, described hot-wire device adopts heated filament to be connected on direct supply two end electrodes, is provided with hot-wire device's switch (13) in the circuit of hot-wire device.
3. the surface recombination modified equipment of a kind of ionitriding according to claim 1 and arc ion plating, it is characterized in that, rotation platform insulation covering (7) is installed between described rotation platform and vacuum chamber, hot-wire device's insulation covering (14) is installed between described hot-wire device and vacuum chamber.
4. the surface recombination modified equipment of a kind of ionitriding according to claim 1 and arc ion plating, is characterized in that, described vacuum chamber inwall is also provided with well heater (3).
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|---|---|---|---|
| CN201520060236.4U CN204434723U (en) | 2015-01-27 | 2015-01-27 | The surface recombination modified equipment of a kind of ionitriding and arc ion plating |
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|---|---|---|---|
| CN201520060236.4U CN204434723U (en) | 2015-01-27 | 2015-01-27 | The surface recombination modified equipment of a kind of ionitriding and arc ion plating |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104561909A (en) * | 2015-01-27 | 2015-04-29 | 大连理工常州研究院有限公司 | Ionitriding/arc ion plating surface composite modification apparatus and method |
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2015
- 2015-01-27 CN CN201520060236.4U patent/CN204434723U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104561909A (en) * | 2015-01-27 | 2015-04-29 | 大连理工常州研究院有限公司 | Ionitriding/arc ion plating surface composite modification apparatus and method |
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