CN204434296U - A kind of polycrystalline silicon reducing furnace - Google Patents

A kind of polycrystalline silicon reducing furnace Download PDF

Info

Publication number
CN204434296U
CN204434296U CN201520119224.4U CN201520119224U CN204434296U CN 204434296 U CN204434296 U CN 204434296U CN 201520119224 U CN201520119224 U CN 201520119224U CN 204434296 U CN204434296 U CN 204434296U
Authority
CN
China
Prior art keywords
reducing furnace
polycrystalline silicon
heater
cavity
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201520119224.4U
Other languages
Chinese (zh)
Inventor
刘艳飞
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chlor Alkali Branch Of Inner Mongolia Erdos Electric Power Metallurgy Group Co ltd
Original Assignee
Chemical Industry For Making Chlorine And Alkali Branch Co Of Metallurgical Ltd Co Of Ordos Inner Mongolia Electric Power
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chemical Industry For Making Chlorine And Alkali Branch Co Of Metallurgical Ltd Co Of Ordos Inner Mongolia Electric Power filed Critical Chemical Industry For Making Chlorine And Alkali Branch Co Of Metallurgical Ltd Co Of Ordos Inner Mongolia Electric Power
Priority to CN201520119224.4U priority Critical patent/CN204434296U/en
Application granted granted Critical
Publication of CN204434296U publication Critical patent/CN204434296U/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Silicon Compounds (AREA)

Abstract

The utility model relates to technical field of polysilicon production, discloses a kind of polycrystalline silicon reducing furnace.This polycrystalline silicon reducing furnace comprises: reduction body of heater, base, silicon rod, feed-pipe and offgas duct; Described reduction body of heater and described base form the cavity sealed, described silicon rod to be arranged on described base and to be positioned at described cavity, one end of described feed-pipe and offgas duct is all through described base and described cavity connects, described reduction body of heater corresponds to described silicon rod and be provided with circulation plate, described circulation plate is arranged in described cavity.Circulation plate in the polycrystalline silicon reducing furnace that the utility model provides makes to reduce the surging force of silicon rod into the feed gas of stove, and produces circulation, accelerates the crystallization velocity of silicon.The sedimentation velocity of silicon and crystallization velocity balance, just effectively can avoid producing cauliflower material, and effectively control gas residence time and flow velocity, improves growth quality and the speed of growth of polysilicon; Have that eradicating efficacy is good, structure is simple, the easy for installation and advantage that reliability is strong.

Description

A kind of polycrystalline silicon reducing furnace
Technical field
The utility model relates to technical field of polysilicon production, particularly relates to a kind of polycrystalline silicon reducing furnace, particularly a kind ofly can eliminate silicon rod cauliflower material and the stronger polycrystalline silicon reducing furnace of reliability.
Background technology
Domestic production polysilicon adopts improved Siemens production technique, reduction process in this production technique is the surface of red-hot silicon core or the silicon rod be energized in reduction furnace, gas material trichlorosilane generation chemical vapour deposition reaction, generating siliceous deposits makes the diameter of silicon core or silicon rod become large gradually, until reach the size of regulation.But, when reaction proceeds to the later stage, when chemical reaction deposit speed is greater than silicon rod surface one-tenth brilliant speed, crystal grain has little time to carry out orderly arrangement on silicon rod surface, will cause the uneven of silicon rod surface, thus cause the hyperplasia of silicon rod, in silicon rod upper part particularly in crossbeam lap-joint, produce the phenomenon of cauliflower form, be commonly called as cauliflower material, generally every platform stove grown rear cauliflower material account for whole silicon rod about 25% or higher, affect product.
Existing polycrystalline silicon reducing furnace material enters stove can arrive upper space to make material, and produces around flowing, and solution adopts mode feeder spout being added spiricle, and material is entered in stove with certain angle.The shortcoming of this method is that material with certain flow velocity, can produce surging force to silicon rod usually in order to arrive reduction furnace top, and the situation of falling stove occurs, the destructiveness very large with electrically generation to equipment.
In view of the defect of above-mentioned prior art, need to provide a kind of and can eliminate silicon rod cauliflower material and the stronger polycrystalline silicon reducing furnace of reliability.
Utility model content
(1) technical problem that will solve
The technical problems to be solved in the utility model is the existing method solving the phenomenon producing cauliflower form is adopt mode feeder spout being added spiricle; this method usually can with certain flow velocity in order to arrive reduction furnace top; surging force can be produced to silicon rod; the situation of falling stove of generation, the destructive problem very large with electrically generation to equipment.
(2) technical scheme
In order to solve the problems of the technologies described above, the utility model provides a kind of polycrystalline silicon reducing furnace.This polycrystalline silicon reducing furnace comprises: reduction body of heater, base, silicon rod, feed-pipe and offgas duct; Described reduction body of heater and described base form the cavity sealed, described silicon rod to be arranged on described base and to be positioned at described cavity, one end of described feed-pipe and offgas duct is all through described base and described cavity connects, described reduction body of heater corresponds to described silicon rod and be provided with circulation plate, described circulation plate is arranged in described cavity.
Wherein, described circulation plate is wave-shape board or conical plate.
Wherein, the described feed-pipe be arranged in described cavity has lengthening section.
Wherein, described lengthening section is provided with multiple spout.
Wherein, described spout is along the circumferential direction uniform intervals of described lengthening section.
Wherein, described lengthening section surface is provided with the coating for reducing calorific loss.
Wherein, described feed-pipe is at least provided with two.
Wherein, described reduction body of heater and described base removably connect.
(3) beneficial effect
Technique scheme tool of the present utility model has the following advantages: reducing body of heater and base in the polycrystalline silicon reducing furnace that the utility model provides forms the cavity sealed, silicon rod to be arranged on base and to be positioned at cavity, one end of feed-pipe and offgas duct is all through base and cavity connects, reduction body of heater corresponds to silicon rod and is provided with circulation plate, circulation plate makes to reduce the surging force of silicon rod into the feed gas of stove, and produce circulation, accelerate the crystallization velocity of silicon.The sedimentation velocity of silicon and crystallization velocity balance, just effectively can avoid producing cauliflower material, and effectively control gas residence time and flow velocity, improves growth quality and the speed of growth of polysilicon.The polycrystalline silicon reducing furnace that the utility model provides has that eradicating efficacy is good, structure is simple, the easy for installation and advantage that reliability is strong.
Accompanying drawing explanation
Fig. 1 is the Facad structure schematic diagram of the utility model embodiment polycrystalline silicon reducing furnace.
In figure: 1: reduction body of heater; 2: silicon rod; 3: circulation plate; 4: feed-pipe; 5: tail gas mouth; 6: base.
Embodiment
In description of the present utility model, except as otherwise noted, the implication of " multiple " is two or more; Term " on ", D score, "left", "right", " interior ", the orientation of the instruction such as " outward " or position relationship be based on orientation shown in the drawings or position relationship, only the utility model and simplified characterization for convenience of description, instead of the machine of instruction or hint indication or element must have specific orientation, with specific azimuth configuration and operation, therefore can not be interpreted as restriction of the present utility model.
In description of the present utility model, it should be noted that, unless otherwise clearly defined and limited, term " installation ", " being connected ", " connection " should be interpreted broadly, and such as, can be fixedly connected with, also can be removably connect, or connect integratedly; Can be mechanical connection, also can be electrical connection; Can be directly be connected, also indirectly can be connected by intermediary.For the ordinary skill in the art, particular case the concrete meaning of above-mentioned term in the utility model can be understood.
Below in conjunction with drawings and Examples, embodiment of the present utility model is described in further detail.Following examples for illustration of the utility model, but are not used for limiting scope of the present utility model.
As shown in Figure 1, the polycrystalline silicon reducing furnace that the utility model embodiment provides comprises: reduction body of heater 1, base 6, silicon rod 2, feed-pipe 4 and offgas duct 5; Described reduction body of heater 1 forms with described base 6 cavity sealed, described silicon rod 2 to be arranged on described base 6 and to be positioned at described cavity, one end of described feed-pipe 4 and offgas duct 5 is all through described base 6 and described cavity connects, described reduction body of heater 1 corresponds to described silicon rod 2 and be provided with circulation plate 3, the reduction body of heater 1 namely around the working part of silicon rod 2 is provided with circulation plate 3.Described circulation plate 3 is arranged in described cavity.The material of circulation plate 3 should be identical with reduction body of heater 1 inwall integral material or produce the material of effect same with inwall.Circulation plate 3 in the polycrystalline silicon reducing furnace that the utility model provides makes to reduce the surging force of silicon rod into the feed gas of stove, and produces circulation, accelerates the crystallization velocity of silicon.The sedimentation velocity of silicon and crystallization velocity balance, just effectively can avoid producing cauliflower material, and effectively control gas residence time and flow velocity, improves growth quality and the speed of growth of polysilicon.Can even furnace heat, because the irregular fever reflection of circulation plate, advantageous effects is produced for reaction; Have that eradicating efficacy is good, structure is simple, the easy for installation and advantage that reliability is strong.
In the utility model, described circulation plate 3 is the conical plate of the back taper that the broad top of wave-shape board or bottom is tightened up.Wave-shape board and conical plate make the material time of hovering in bottom increase, top material supplies well sold and in short supply meeting and slows down upper gaseous phase deposition reaction speed, also chemical reaction deposit speed becomes brilliant speed gap with silicon rod surface can be reduced, the equivalent effect stirred is produced to crystallisation process, reduces " cauliflower material " and generate.
When lengthening to make reduction body of heater, still obtain good gas flow pattern, the utility model is provided with spout on the lengthening section of feed-pipe.In the present embodiment, the described feed-pipe 4 be arranged in described cavity has lengthening section.Described lengthening section is provided with multiple spout.Described spout is along the circumferential direction uniform intervals of described lengthening section.Described lengthening section surface is provided with the coating for reducing calorific loss.
In the utility model, in order to increase reduction rate, at least can be provided with two described feed-pipes 4 as required, in the present embodiment, being provided with two feed-pipes 4.And silicon rod 2 of conveniently taking, described reduction body of heater 1 removably connects with described base 6.
The utility model polycrystalline silicon reducing furnace is in use procedure: base 6 forms cavity with reduction body of heater 1, and silicon rod 2 is arranged on base 6, is positioned at cavity.Gas enters circulation plate 3 in cavity and makes to reduce the surging force of silicon rod into the feed gas of stove, and produces circulation, accelerates the crystallization velocity of silicon.The sedimentation velocity of silicon and crystallization velocity balance, just effectively can avoid producing cauliflower material, and effectively control gas residence time and flow velocity, improves growth quality and the speed of growth of polysilicon.
In sum, the utility model has the following advantages: reducing body of heater and base in the polycrystalline silicon reducing furnace that the utility model provides forms the cavity sealed, silicon rod to be arranged on base and to be positioned at cavity, one end of feed-pipe and offgas duct is all through base and cavity connects, reduction body of heater corresponds to silicon rod and is provided with circulation plate, circulation plate is arranged in cavity.Circulation plate in the polycrystalline silicon reducing furnace that the utility model provides makes to reduce the surging force of silicon rod into the feed gas of stove, and produces circulation, accelerates the crystallization velocity of silicon.The sedimentation velocity of silicon and crystallization velocity balance, just effectively can avoid producing cauliflower material, and effectively control gas residence time and flow velocity, improves growth quality and the speed of growth of polysilicon; Have that eradicating efficacy is good, structure is simple, the easy for installation and advantage that reliability is strong.
Further, when lengthening to make reduction body of heater, still obtain good gas flow pattern, the utility model is provided with spout on the lengthening section of feed-pipe.
Above embodiment only in order to the technical solution of the utility model to be described, is not intended to limit; Although be described in detail the utility model with reference to previous embodiment, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein portion of techniques feature; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the spirit and scope of each embodiment technical scheme of the utility model.

Claims (8)

1. a polycrystalline silicon reducing furnace, is characterized in that, comprising: reduction body of heater (1), base (6), silicon rod (2), feed-pipe (4) and offgas duct (5); Described reduction body of heater (1) and described base (6) form the cavity sealed, described silicon rod (2) is arranged at described base (6) and goes up and be positioned at described cavity, one end of described feed-pipe (4) and offgas duct (5) is all through described base (6) and described cavity connects, the upper described silicon rod (2) that corresponds to of described reduction body of heater (1) is provided with circulation plate (3), and described circulation plate (3) is arranged in described cavity.
2. polycrystalline silicon reducing furnace according to claim 1, is characterized in that: described circulation plate (3) is wave-shape board or conical plate.
3. polycrystalline silicon reducing furnace according to claim 1, is characterized in that: the described feed-pipe (4) be arranged in described cavity has lengthening section.
4. polycrystalline silicon reducing furnace according to claim 3, is characterized in that: described lengthening section is provided with multiple spout.
5. polycrystalline silicon reducing furnace according to claim 4, is characterized in that: described spout is along the circumferential direction uniform intervals of described lengthening section.
6. polycrystalline silicon reducing furnace according to claim 3, is characterized in that: described lengthening section surface is provided with the coating for reducing calorific loss.
7. polycrystalline silicon reducing furnace according to claim 1, is characterized in that: described feed-pipe (4) is at least provided with two.
8. polycrystalline silicon reducing furnace according to claim 1, is characterized in that: described reduction body of heater (1) and described base (6) removably connect.
CN201520119224.4U 2015-02-28 2015-02-28 A kind of polycrystalline silicon reducing furnace Expired - Fee Related CN204434296U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201520119224.4U CN204434296U (en) 2015-02-28 2015-02-28 A kind of polycrystalline silicon reducing furnace

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201520119224.4U CN204434296U (en) 2015-02-28 2015-02-28 A kind of polycrystalline silicon reducing furnace

Publications (1)

Publication Number Publication Date
CN204434296U true CN204434296U (en) 2015-07-01

Family

ID=53602191

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201520119224.4U Expired - Fee Related CN204434296U (en) 2015-02-28 2015-02-28 A kind of polycrystalline silicon reducing furnace

Country Status (1)

Country Link
CN (1) CN204434296U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107720756A (en) * 2017-11-03 2018-02-23 亚洲硅业(青海)有限公司 A kind of polycrystalline silicon reducing furnace
CN110655083A (en) * 2019-11-12 2020-01-07 四川永祥新能源有限公司 Polycrystalline silicon reduction furnace

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107720756A (en) * 2017-11-03 2018-02-23 亚洲硅业(青海)有限公司 A kind of polycrystalline silicon reducing furnace
CN110655083A (en) * 2019-11-12 2020-01-07 四川永祥新能源有限公司 Polycrystalline silicon reduction furnace
CN110655083B (en) * 2019-11-12 2021-04-27 四川永祥新能源有限公司 Polycrystalline silicon reduction furnace

Similar Documents

Publication Publication Date Title
KR101821851B1 (en) Production method for polycrystalline silicon, and reactor for polycrystalline silicon production
CN201313954Y (en) Reducing furnace for preparing polycrystalline silicon
CN103255473A (en) Auxiliary heating device for zone melting furnaces and single crystal bar heat-preserving method thereof
CN102418140A (en) Czochralski silicon monocrystal growth furnace and method for filling silicon melts continuously
CN204434296U (en) A kind of polycrystalline silicon reducing furnace
CN101748482A (en) Prepare improving one's methods and installing of high dense structure polysilicon
CN103510156A (en) Polycrystalline silicon rod
CN201512418U (en) Polycrystalline silicon reducing furnace
JPH05139891A (en) Method and device for producing semiconductor grade multi-crystal silicon
CN106573784A (en) Reaction furnace for producing polycrystalline silicon, apparatus for producing polycrystalline silicon, method for producing polycrystalline silicon, and, polycrystalline silicon rod or polycrystalline silicon ingot
CN202170245U (en) Polycrystalline silicon reduction furnace with multiple feeding points
CN104973600A (en) Polycrystalline silicon production method
CN201125165Y (en) Polysilicon reducing furnace having double cooling system
KR20130019182A (en) Poly silicon deposition device
CN201665536U (en) Reducing furnace applicable to Siemens technique for producing polycrystalline silicon
CN201268729Y (en) Seed crystal clamping device
CN106933119A (en) Polycrystalline silicon reducing furnace power regulating cabinet control system
CN201545933U (en) High-frequency heating coil for growth of monocrystalline silicon by zone-melting method
CN103590109B (en) Czochralski crystal growing furnace magnetic field device and use the crystal pulling method of this magnetic field device
CN108545745A (en) A kind of 72 pairs of stick polycrystalline silicon reducing furnaces
CN104108718A (en) Method and device for quickly depositing polysilicon
WO2014061212A1 (en) Method for supplying source gas for producing polycrystalline silicon and polycrystalline silicon
US10392286B2 (en) Vitrified material control system and method
CN203284497U (en) Auxiliary heating device for zone melting furnace
CN105603511A (en) Guide cylinder for single-crystal furnace

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Qipanjing Town Industrial Park of the Inner Mongolia Autonomous Region city Etuokeqi 016064 Ordos

Patentee after: CHLOR-ALKALI BRANCH OF INNER MONGOLIA ERDOS ELECTRIC POWER METALLURGY GROUP CO.,LTD.

Address before: Qipanjing Town Industrial Park of the Inner Mongolia Autonomous Region city Etuokeqi 016064 Ordos

Patentee before: INNER MONGOLIA ERDOS POWER METALLURGY CO.,LTD. CHLOR ALKALI CHEMICAL BRANCH

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150701