CN204425178U - ON-OFF control circuit - Google Patents

ON-OFF control circuit Download PDF

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Publication number
CN204425178U
CN204425178U CN201520087290.8U CN201520087290U CN204425178U CN 204425178 U CN204425178 U CN 204425178U CN 201520087290 U CN201520087290 U CN 201520087290U CN 204425178 U CN204425178 U CN 204425178U
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CN
China
Prior art keywords
semiconductor
oxide
metal
resistance
diode
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Expired - Fee Related
Application number
CN201520087290.8U
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Chinese (zh)
Inventor
盛黎明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Xingangyuan Technology Co ltd
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Shenzhen Xingangyuan Technology Co ltd
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Priority to CN201520087290.8U priority Critical patent/CN204425178U/en
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Publication of CN204425178U publication Critical patent/CN204425178U/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Abstract

The utility model relates to a kind of ON-OFF control circuit, comprising: metal-oxide-semiconductor, the first resistance, the second resistance, the 3rd resistance, the first diode and signal input part; First resistance is connected with the grid of metal-oxide-semiconductor and signal input part respectively, and the second resistance is connected with the grid of metal-oxide-semiconductor and the positive pole of the first diode respectively, and the negative pole of the first diode is connected with signal input part, and the grid of metal-oxide-semiconductor is by the 3rd grounding through resistance.In above-mentioned ON-OFF control circuit, metal-oxide-semiconductor is formed by the first resistance and opens path, and forms shutoff path by the second resistance and the first diode, thus shortens the transit time turned on and off of metal-oxide-semiconductor, decrease the caloric value of metal-oxide-semiconductor, extend the useful life of metal-oxide-semiconductor.

Description

ON-OFF control circuit
Technical field
The utility model relates to electronic circuit field, particularly relates to a kind of ON-OFF control circuit.
Background technology
Switching power circuit utilizes modern power electronics technology, the time ratio that control switch pipe turns on and off, and maintains a kind of power supply of regulated output voltage.Switching power circuit generally includes pulse width modulation (PWM) control IC and the metal-oxide-semiconductor as switching tube.Along with development and the innovation of power electronic technology, switch power supply road technique is also constantly being innovated.At present, switching power circuit to be widely used nearly all electronic equipment with small-sized, light weight and high efficiency feature, is the indispensable a kind of power mode of current electronics and information industry develop rapidly.
But due to the impact of the factor such as resistance, junction capacitance of metal-oxide-semiconductor inside, turning on and off of metal-oxide-semiconductor needs certain transit time, makes the caloric value of metal-oxide-semiconductor increase, has a strong impact on the useful life of Switching Power Supply.
Utility model content
Based on this, be necessary for the larger problem of existing Switching Power Supply breaker in middle pipe caloric value, provide a kind of transit time turned on and off shortening switching tube to reduce the ON-OFF control circuit of switching tube caloric value.
A kind of ON-OFF control circuit, comprising: metal-oxide-semiconductor, the first resistance, the second resistance, the 3rd resistance, the first diode and signal input part;
First resistance is connected with the grid of metal-oxide-semiconductor and signal input part respectively, and the second resistance is connected with the grid of metal-oxide-semiconductor and the positive pole of the first diode respectively, and the negative pole of the first diode is connected with signal input part, and the grid of metal-oxide-semiconductor is by the 3rd grounding through resistance.
Wherein in an embodiment, metal-oxide-semiconductor is N channel field-effect pipe.
Wherein in an embodiment, also comprise voltage input end, the second diode, the 4th resistance and electric capacity;
4th resistance and Capacitance parallel connection, and be connected with the negative pole of voltage input end and the second diode respectively, the positive pole of the second diode is connected with the drain electrode of metal-oxide-semiconductor.
In above-mentioned ON-OFF control circuit, metal-oxide-semiconductor is formed by the first resistance and opens path, and forms shutoff path by the second resistance and the first diode, thus shortens the transit time turned on and off of metal-oxide-semiconductor, decrease the caloric value of metal-oxide-semiconductor, extend the useful life of metal-oxide-semiconductor.
Accompanying drawing explanation
Fig. 1 is the electrical block diagram of the utility model one embodiment ON-OFF control circuit;
The pwm signal change curve that the electric current that Fig. 2 is the drain electrode and source electrode of flowing through metal-oxide-semiconductor shown in Fig. 1 receives with signal input part;
Fig. 3 is the electrical block diagram of another embodiment ON-OFF control circuit of the utility model.
Embodiment
As shown in Figure 1, it is the electrical block diagram of the utility model one embodiment ON-OFF control circuit 10.ON-OFF control circuit 10 comprises: metal-oxide-semiconductor 110, first resistance 120, second resistance 130, the 3rd resistance 140, first diode 150 and signal input part 160.
First resistance 120 is connected with the grid of metal-oxide-semiconductor 110 and signal input part 160 respectively, second resistance 130 is connected with the grid of metal-oxide-semiconductor 110 and the positive pole of the first diode 150 respectively, the negative pole of the first diode 150 is connected with signal input part 160, and the grid of metal-oxide-semiconductor 110 is by the 3rd resistance 140 ground connection.Signal input part 160 for receiving pwm signal, to control turning on and off of metal-oxide-semiconductor 110.
In the present embodiment, metal-oxide-semiconductor 110 is N channel field-effect pipe, and in other embodiments, metal-oxide-semiconductor 110 also can be P-channel field-effect transistor (PEFT) pipe.
As shown in Figure 2, it is flow through the drain electrode of metal-oxide-semiconductor 110 and the current i of source electrode dSwith the pwm signal change curve that signal input part 160 receives.Uprised by low when being carried in the pwm signal voltage on signal input part 160, metal-oxide-semiconductor 110 is converted in opening state process by off state gradually, and pwm signal arrives the grid of metal-oxide-semiconductor 110, relative to current i in prior art via the first resistance 120 dSthe rising edge curve 301 formed, the rising edge curve 401 that in ON-OFF control circuit 10, metal-oxide-semiconductor 110 is formed is more precipitous, thus shorten the service time of metal-oxide-semiconductor 110, first resistance 120 is used for regulating the charging rate of electric capacity between metal-oxide-semiconductor 110 internal gate and source electrode, to control the transit time of opening of metal-oxide-semiconductor 110, avoid the transit time of opening because of metal-oxide-semiconductor 110 long and cause caloric value excessive, affecting the useful life of metal-oxide-semiconductor 110.
When being carried in the pwm signal voltage on signal input part 160 by high step-down, metal-oxide-semiconductor 110 is converted in off state process by opening state gradually, between metal-oxide-semiconductor 110 internal gate and source electrode, the electric charge of capacitance stores is discharged, relative to current i in prior art by the second resistance 130 and the first diode 150 dSthe trailing edge curve 302 formed, the trailing edge curve 402 that in ON-OFF control circuit 10, metal-oxide-semiconductor 110 is formed is more precipitous, realize the quick shutoff of metal-oxide-semiconductor 110, second resistance 130 is used for regulating the rate of release of the electric charge stored in metal-oxide-semiconductor 110, avoid the transit time because of the shutoff of metal-oxide-semiconductor 110 long and cause caloric value excessive, affecting the useful life of metal-oxide-semiconductor 110.3rd resistance 140 can form effective release path of electric charge, prevents the electric charge being accumulated in metal-oxide-semiconductor 110 grid from puncturing grid and the source electrode of metal-oxide-semiconductor 110.
As shown in Figure 3, it is the electrical block diagram of another embodiment ON-OFF control circuit 20 of the utility model.ON-OFF control circuit 20 comprises: ON-OFF control circuit 10, the 4th resistance 210, electric capacity 220, voltage input end 230 and the second diode 240.4th resistance 210 and electric capacity 220 parallel connection, and be connected with the negative pole of voltage input end 230 and the second diode 240 respectively, the positive pole of the second diode 240 is connected with the drain electrode of metal-oxide-semiconductor 110.Voltage input end 230 is for receiving d. c. voltage signal.Second diode 240 can prevent the upper most advanced and sophisticated pulse signal being carried in voltage input end 230 from damaging metal-oxide-semiconductor 110, and in addition, the 4th resistance 210 and electric capacity 220 form the Releasing loop to being carried in the most advanced and sophisticated pulse signal that metal-oxide-semiconductor 110 drains.
In above-mentioned ON-OFF control circuit 10, metal-oxide-semiconductor 110 is formed by the first resistance 120 and opens path, and form shutoff path by the second resistance 130 and the first diode 150, thus shorten the transit time turned on and off of metal-oxide-semiconductor 110, decrease the caloric value of metal-oxide-semiconductor 110, extend the useful life of metal-oxide-semiconductor 110.
Each technical characteristic of above embodiment can combine arbitrarily, for making description succinct, all possible combination of each technical characteristic in above-described embodiment is not all described, but, as long as the combination of these technical characteristics does not exist contradiction, be all considered to be the scope that this specification is recorded.
Above embodiment only have expressed several execution mode of the present utility model, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to utility model patent scope.It should be pointed out that for the person of ordinary skill of the art, without departing from the concept of the premise utility, can also make some distortion and improvement, these all belong to protection range of the present utility model.Therefore, the protection range of the utility model patent should be as the criterion with claims.

Claims (3)

1. an ON-OFF control circuit, is characterized in that, comprising: metal-oxide-semiconductor, the first resistance, the second resistance, the 3rd resistance, the first diode and signal input part;
First resistance is connected with the grid of metal-oxide-semiconductor and signal input part respectively, and the second resistance is connected with the grid of metal-oxide-semiconductor and the positive pole of the first diode respectively, and the negative pole of the first diode is connected with signal input part, and the grid of metal-oxide-semiconductor is by the 3rd grounding through resistance.
2. ON-OFF control circuit according to claim 1, is characterized in that, metal-oxide-semiconductor is N channel field-effect pipe.
3. ON-OFF control circuit according to claim 1, is characterized in that, also comprises voltage input end, the second diode, the 4th resistance and electric capacity;
4th resistance and Capacitance parallel connection, and be connected with the negative pole of voltage input end and the second diode respectively, the positive pole of the second diode is connected with the drain electrode of metal-oxide-semiconductor.
CN201520087290.8U 2015-02-06 2015-02-06 ON-OFF control circuit Expired - Fee Related CN204425178U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201520087290.8U CN204425178U (en) 2015-02-06 2015-02-06 ON-OFF control circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201520087290.8U CN204425178U (en) 2015-02-06 2015-02-06 ON-OFF control circuit

Publications (1)

Publication Number Publication Date
CN204425178U true CN204425178U (en) 2015-06-24

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201520087290.8U Expired - Fee Related CN204425178U (en) 2015-02-06 2015-02-06 ON-OFF control circuit

Country Status (1)

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CN (1) CN204425178U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111379893A (en) * 2020-03-20 2020-07-07 青岛中加特电气股份有限公司 Device for controlling electromagnetic valve

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111379893A (en) * 2020-03-20 2020-07-07 青岛中加特电气股份有限公司 Device for controlling electromagnetic valve

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150624

Termination date: 20170206