CN204361892U

CN204361892U - Full-bridge inverter single supply is Miller clamp IGBT drive circuit initiatively

Info

Publication number: CN204361892U
Application number: CN201420799610.8U
Authority: CN
Inventors: 江海洋
Original assignee: SHENZHEN BAO'AN RENDA ELECTRICAL APPLIANCES CO Ltd
Current assignee: SHENZHEN BAO'AN RENDA ELECTRICAL APPLIANCES CO Ltd
Priority date: 2014-12-16
Filing date: 2014-12-16
Publication date: 2015-05-27
Anticipated expiration: 2024-12-16

Abstract

The utility model provides a kind of full-bridge inverter single supply initiatively Miller clamp IGBT drive circuit, comprises IGBT module, controller, isolation module and break-make module; Described controller connects grid and the isolation module of IGBT module, and isolation module connects break-make module, and break-make model calling is between the grid and drain electrode of IGBT module.When IGBT module switches, controller control by isolation module conducting break-make module, and then by the grid G of IGBT and the dead short circuit of drain D pole, makes charge inducing be released rapidly thus the spike of grid G on IGBT cannot be set up.Visible, this patent scheme is not make induced voltage be no more than unlatching thresholding by adding negative pressure at GE, but fundamentally eliminates the Miller effect by corresponding discharge mode, have cost low, debug feature easily.

Description

Full-bridge inverter single supply is Miller clamp IGBT drive circuit initiatively

Technical field

The utility model relates to a kind of IGBT drive circuit, refers in particular to a kind of full-bridge inverter single supply initiatively Miller clamp IGBT drive circuit.

Background technology

In full-bridge inverter, usually when brachium pontis lower in circuit turns off (after waiting for dead band time delay, upper brachium pontis is opened), the CE pole tension of this pipe at present rises to the parasitic capacitance Cgc of BUS+ voltage (dV/dt is very big) due to IGBT instantaneously by 0, G pole can induce a due to voltage spikes, Here it is so-called the Miller effect.And the bridge arm direct pass risk that common IGBT generally chooses negative pressure shutoff mode in driving avoids the Miller effect to bring, although inhibit the G pole induced voltage that the high dV/dt of lower brachium pontis in full-bridge circuit causes like this, but this effect cannot be eradicated, and the introducing of negative voltage also adds the cost of circuit and the complexity of accessory power supply debugging.

Utility model content

Technical problem to be solved in the utility model is: eliminate the Miller effect produced in the switching process of IGBT driving.

In order to solve the problems of the technologies described above, the technical solution adopted in the utility model is: a kind of full-bridge inverter single supply is Miller clamp IGBT drive circuit initiatively, comprises IGBT module, controller, isolation module and break-make module; Described controller connects grid and the isolation module of IGBT module, and isolation module connects break-make module, and break-make model calling is between the grid and drain electrode of IGBT module.

In above-mentioned, described isolation module comprises Phototube Coupling unit, and controller connects the input of Phototube Coupling unit by PWM, and the output of Phototube Coupling unit connects break-make module.

In above-mentioned, described Phototube Coupling unit is the photoelectrical coupler of model HCPL-3120.

In above-mentioned, described break-make module comprises PMOS and NMOS; The grid of NMOS connects isolation module, and source electrode connects the grid of PMOS, and drain electrode connects the drain electrode of IGBT module; The source electrode of PMOS connects the grid of IGBT module, and drain electrode connects the drain electrode of IGBT module.

In above-mentioned, described NMOS is the metal-oxide-semiconductor of model 2N7002; Described PMOS is the metal-oxide-semiconductor of model AO4468.

In above-mentioned, described IGBT module comprises four, and corresponding each IGBT module is provided with one group of isolation module and break-make module, and the break-make module correspondence often organized is connected between the grid of this group IGBT module and drain electrode; Described four IGBT module are helped bridging and are connect.

The beneficial effects of the utility model are: when IGBT module switches, controller control is by isolation module conducting break-make module, and then by the grid G of IGBT and the dead short circuit of drain D pole, charge inducing is released rapidly thus the spike of grid G on IGBT cannot be set up.Visible, this patent scheme is not make induced voltage be no more than unlatching thresholding by adding negative pressure at GE, but fundamentally eliminates the Miller effect by corresponding discharge mode, have cost low, debug feature easily.

Accompanying drawing explanation

Below in conjunction with accompanying drawing in detail concrete structure of the present utility model is described in detail

Fig. 1 is schematic block circuit diagram of the present utility model;

Fig. 2 is specific embodiment of the utility model schematic block circuit diagram;

Fig. 3 is concrete exemplary circuit Fig. 1 of the present utility model;

Fig. 4 is concrete exemplary circuit Fig. 2 of the present utility model.

Embodiment

By describing technology contents of the present utility model, structural feature in detail, realized object and effect, accompanying drawing is coordinated to be explained in detail below in conjunction with execution mode.

Refer to Fig. 1, a kind of full-bridge inverter single supply is Miller clamp IGBT drive circuit initiatively, comprises IGBT module, controller, isolation module and break-make module; Described controller connects grid and the isolation module of IGBT module, and isolation module connects break-make module, and break-make model calling is between the grid and drain electrode of IGBT module.

Thus, if when IGBT module switches, controller control by isolation module conducting break-make module, and then by the grid G of IGBT and the dead short circuit of drain D pole, makes charge inducing be released rapidly thus the spike of grid G on IGBT cannot be set up.Visible, this patent scheme is not make induced voltage be no more than unlatching thresholding by adding negative pressure at GE, but fundamentally eliminates the Miller effect by corresponding discharge mode, have cost low, debug feature easily.

Embodiment 1:

Because IGBT end is high power regions, therefore isolation module should be set up to its control of discharge.And isolation module common are transformer, photoelectric coupling and Capacitor apart three kinds.Wherein according to transformer isolation, there is the complicated and problem that cost is high of circuit structure, then there is the defect be easily interfered in this type of high-power applications occasion in Capacitor apart, therefore through optimizing, the isolation module that this patent has most selects Phototube Coupling, not only can prevent by isolation the interference coming from power end, the big current also IGBT accidental short circuit can being avoided to bring pours in down a chimney the risk damaging controller.

Embodiment 2:

In above-mentioned, described Phototube Coupling unit is the photoelectrical coupler of model HCPL-3120.Have to arrive through great many of experiments, adopt the photoelectrical coupler of model HCPL-3120 can reach the optimum balance of cost, effect.

Embodiment 3:

As shown in Figure 2, in above-mentioned, described break-make module comprises PMOS and NMOS; The grid of NMOS connects isolation module, and source electrode connects the grid of PMOS, and drain electrode connects the drain electrode of IGBT module; The source electrode of PMOS connects the grid of IGBT module, and drain electrode connects the drain electrode of IGBT module.

Embodiment 4:

In above-mentioned, described NMOS is the metal-oxide-semiconductor of model 2N7002; Described PMOS is the metal-oxide-semiconductor of model AO4468.Have to arrive through great many of experiments, adopt the metal-oxide-semiconductor of model 2N7002; Described PMOS is the metal-oxide-semiconductor of model AO4468, and the logic set up by two low power metal-oxide-semiconductors can realize break-make functions of modules demand, and reaches the optimum balance of cost, effect.

Embodiment 5:

Be illustrated in figure 3 the schematic diagram of full-bridge inverter single supply part, it forms bridge type inverting power supply part by four IGBT, four IGBT control break-make respectively by QI1G, QI2G, QI3G and QI4G tetra-control ends, and one group of power supply forming 110N and QI1S exports between two.All the Miller effect is realized in order to ensure to IGBT each in circuit, therefore corresponding each IGBT is provided with one group of isolation module and break-make module (as shown in Figure 4), and each group isolation module and break-make module connect QI1G, 110N of corresponding IGBT respectively; QI2G, 110N; QI3G, QI1S; QI4G, QI1S; PWM1H, PWM2H, PWM3H, PWM4H that each isolation module then exports respectively by controller control.Thus, when in circuit, lower brachium pontis turns off (after waiting for dead band time delay, upper brachium pontis is opened), this at present pipe CE pole tension rise to the parasitic capacitance Cgc of BUS+ voltage (dV/dt is very big) due to IGBT instantaneously by 0, G pole can induce a due to voltage spikes simultaneously, because rear pole MOS is contrary with optocoupler logic, the now complete conducting of AO4468 is by the GE pole dead short circuit of IGBT, therefore above-mentioned charge inducing is released rapidly spike and cannot be set up, and fundamentally eliminates the Miller effect.

The foregoing is only embodiment of the present utility model; not thereby the scope of the claims of the present utility model is limited; every utilize the utility model specification and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present utility model.

Claims

1. a full-bridge inverter single supply initiatively Miller clamp IGBT drive circuit, is characterized in that: comprise IGBT module, controller, isolation module and break-make module; Described controller connects grid and the isolation module of IGBT module, and isolation module connects break-make module, and break-make model calling is between the grid and drain electrode of IGBT module.

2. full-bridge inverter single supply as claimed in claim 1 initiatively Miller clamp IGBT drive circuit, it is characterized in that: described isolation module comprises Phototube Coupling unit, controller connects the input of Phototube Coupling unit by PWM, and the output of Phototube Coupling unit connects break-make module.

3. full-bridge inverter single supply as claimed in claim 2 initiatively Miller clamp IGBT drive circuit, is characterized in that: described Phototube Coupling unit is the photoelectrical coupler of model HCPL-3120.

4. the full-bridge inverter single supply as described in claim 1-3 any one is Miller clamp IGBT drive circuit initiatively, it is characterized in that: described break-make module comprises PMOS and NMOS; The grid of NMOS connects isolation module, and source electrode connects the grid of PMOS, and drain electrode connects the drain electrode of IGBT module; The source electrode of PMOS connects the grid of IGBT module, and drain electrode connects the drain electrode of IGBT module.

5. full-bridge inverter single supply as claimed in claim 4 initiatively Miller clamp IGBT drive circuit, is characterized in that: described NMOS is the metal-oxide-semiconductor of model 2N7002; Described PMOS is the metal-oxide-semiconductor of model AO4468.

6. full-bridge inverter single supply as claimed in claim 4 initiatively Miller clamp IGBT drive circuit, it is characterized in that: described IGBT module comprises four, corresponding each IGBT module is provided with one group of isolation module and break-make module, and the break-make module correspondence often organized is connected between the grid of this group IGBT module and drain electrode; Described four IGBT module are helped bridging and are connect.