CN204332951U - The three-dimensional interconnect architecture of the substrate GaN-based Schottky barrier diode device of a kind of Si - Google Patents
The three-dimensional interconnect architecture of the substrate GaN-based Schottky barrier diode device of a kind of Si Download PDFInfo
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- CN204332951U CN204332951U CN201420688186.XU CN201420688186U CN204332951U CN 204332951 U CN204332951 U CN 204332951U CN 201420688186 U CN201420688186 U CN 201420688186U CN 204332951 U CN204332951 U CN 204332951U
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- 230000004888 barrier function Effects 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 title claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 230000008021 deposition Effects 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 description 11
- 230000000712 assembly Effects 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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Abstract
The utility model relates to the three-dimensional interconnect architecture of the substrate GaN-based Schottky barrier diode device of a kind of Si, comprise two or more diode, single diode comprises the Si substrate layer (1) arranged from bottom to up, GaN epitaxial layer (2), electrode layer, the negative electrode (3) of wherein said electrode layer is relative with anode (4), and be arranged in GaN epitaxial layer (2) at interval, it is characterized in that: two or more diode is bonded to the layer structure of upper and lower closed assembly, and the contact-making surface of two neighbouring layer diodes separates by insulating barrier (6), the negative electrode of each layer diode and anode line up perpendicular row respectively, except the diode being positioned at the bottom, all diodes on its upper strata and insulating barrier are run through by two vertical through holes, and described two vertical through holes lay respectively at the negative electrode (3) of corresponding each diode and the position of anode (4), described two vertical through holes hole walls are respectively equipped with and deposit an insulating barrier (6), the metal (7) of the counter electrode of each layer diode of UNICOM is deposited in described two vertical through holes (2,3).The utility model can realize the closed assembly between diode.
Description
Art
The utility model relates to the three-dimensional interconnect architecture of the substrate GaN-based Schottky barrier diode device of a kind of Si.
Background technology
Electron electric power technology development, the electronic devices such as pressurizer, rectifier, inverter are applied more and more extensive in daily life, relate to the numerous areas such as high voltage supply, electric energy management, factory automation and motor vehicle power-distribution management.Diode and switching device are parts indispensable in these applications.In recent years, have high frequency, big current, low power consumption characteristic Schottky diode compared with the devices such as PN junction diode, more and more noticeable with the performance advantage of its uniqueness.
GaN is the Group III-V compound semiconductor material of representative, there is the material property of broad stopband, high breakdown field strength, high heat conductance, high saturated electron drift velocity, the high excellence of heterojunction boundary two-dimensional electron gas, based on the substrate GaN-based Schottky diode of Si, having compared with traditional Si base power device that switching speed is fast, loss is low, heat resisting temperature advantages of higher, is the ideal substitute of energy-saving power device of future generation.
But the substrate GaN-based schottky diode device of existing Si commercialization, practical time traditional handicraft adopt two-dimentional encapsulation technology, namely the substrate GaN-based Schottky diode unit of multiple Si is arranged in the matrix of individual layer at grade, form overall device, be difficult to the miniaturization and the lightweight that realize chip like this.
Utility model content
The technical problems to be solved in the utility model, is to provide the three-dimensional interconnect architecture of the substrate GaN-based Schottky barrier diode device of a kind of Si.
The technical problems to be solved in the utility model, following technical scheme can be adopted: the three-dimensional interconnect architecture of the substrate GaN-based Schottky barrier diode device of a kind of Si, comprise two or more diode, single diode comprises the Si substrate layer 1 arranged from bottom to up, GaN epitaxial layer 2, electrode layer, the negative electrode 3 of wherein said electrode layer is relative with anode 4, and be arranged in GaN epitaxial layer 2 at interval, it is characterized in that: two or more diode is bonded to the layer structure of upper and lower closed assembly, and the contact-making surface of two neighbouring layer diodes separates by insulating barrier 6, the negative electrode of each layer diode and anode line up perpendicular row respectively, except the diode being positioned at the bottom, all diodes on its upper strata and insulating barrier are run through by two vertical through holes, and described two vertical through holes lay respectively at the negative electrode 3 of corresponding each diode and the position of anode 4, described two vertical through holes hole walls deposit an insulating barrier 6 respectively, the metal 7 of the counter electrode of each layer diode of UNICOM is deposited in described two vertical through holes 2,3.
The negative electrode of the metal needs deposited in the vertical through holes due to the negative electrode of corresponding diode and each layer diode forms low-resistance Ohm contact, therefore on the basis of the above, in step S4 described in the utility model the negative electrode of corresponding diode vertical Si through hole in deposition metal be Ti, W, Ni, Al or
cu; Above-mentioned metal material is less than 0.3eV(barrier height=metal work function-semiconductor (GaN) work function with the barrier height of GaN material); Metal carrying resistivity is low, wherein Ti
(40-70mWcm), W (8 ~ 15
mWcm), Ni (6.9
mWcm), Al (
2.7-3.0mWcm),
cu(
1.7-2.0mWcm), good conductivity can be ensured; Easy and negative electrode forms low-resistance Ohm contact; Good adhesiveness is had with GaN and insulating material etc.; Be easy to deposit and etching, be convenient to bonding; Stable and reliable for performance; The coverage rate of metal pair step will be got well.
On the basis of the above, in the insulating barrier between each layer diode described in the utility model and/or described step S3, the insulating barrier of two vertical Si through holes of device is SiO
2, SiON
x, SiN
x, Al
2o
3, TiO
2, HfO
2, Ga
2o
3, AlHfO
x, any one or several combination in AlN, MgO, HfSiON.Above-mentioned insulating material dielectric constant is not less than 3.9, under certain equivalent oxide thickness condition, can increase thickness of insulating layer like this, reduce insulating barrier defect concentration and electric field, reduce tunnelling current, ensure device performance; Secondly, must ensure the band gap width of large insulating barrier, the conduction band difference with GaN is greater than 1eV, and higher band gap difference is the guarantee reducing electric leakage, reduces thermionic emission and tunnelling probability; 3rd, the breakdown electric field of insulating layer material is at 10MV/cm, and the breakdown electric field that insulating barrier can bear is higher; 4th, insulating layer material is amorphous material and technology of preparing is ripe, and crystal grain gap appears in many crystalline material, and increase leak channel, amorphous material can avoid the generation of this phenomenon, reduces leakage current; And the technology of preparing of maturation is more conducive to carrying out of experimental study.5th, the defect of insulating layer material own is few, density is high, can be corrosion-resistant, radiation hardness, insulating layer material is also wanted to resist corresponding environment, 6th, can ensure that this material can grow film forming on GaN material, obtain good interface quality, high-quality interface is the key obtaining active parts.
Insulating barrier between described neighbouring two diodes is arranged on negative electrode 3 and anode 4 place that correspondence is positioned at the diode of below, naked layer between the negative electrode 3 of electrode layer being same as diode and anode 4, to alleviate device package weight, realize light-weighted target.
The three-dimensional interconnect architecture of the substrate GaN-based Schottky barrier diode device of the Si that the utility model provides, insulating barrier between adjacent upper and lower two diodes can be isolated upper and lower two diodes and effectively be prevented electric leakage, the metal be simultaneously deposited in vertical through holes is communicated with the counter electrode of each layer diode, realize metal-metal bonding, realize each layer diode and all can conduct electricity.Because the thickness of a device only has 1 ~ 2 micron, but its lateral dimension reaches several micron even hundreds of micron, existing multiple diode component same plane is arranged in the corresponding electrode of matrix metallic communication of individual layer, the length of so interconnected metal just very large (tens microns to hundreds of micron), and the structure of the multiple diode closed assembly of the utility model, realize multiple diode interconnected in the vertical direction, so between diode, the length of interconnected metal is himself thickness, interconnected metal is shorter, current signal transfer distance is shorter, and signal delay is fewer.
Accompanying drawing explanation
Fig. 1 is the vertical cross-section structural representation of the three-dimensional interconnect architecture of the substrate GaN-based Schottky barrier diode device of Si of the present utility model;
Fig. 2 is the vertical cross-section structural representation of the three-dimensional interconnect architecture of the substrate GaN-based Schottky barrier diode device of another Si of the present utility model;
Fig. 3 is the vertical cross-section structural representation of the three-dimensional interconnect architecture of the substrate GaN-based Schottky barrier diode device of the third Si of the present utility model.
Embodiment
The three-dimensional interconnect architecture of the substrate GaN-based Schottky barrier diode device of a kind of Si, comprise two or more diode, single diode comprises the Si substrate layer 1, GaN epitaxial layer 2, the electrode layer that arrange from bottom to up, the negative electrode 3 of wherein said electrode layer is relative with anode 4 and be arranged in GaN epitaxial layer 2 at interval, it is characterized in that: two or more diode is bonded to the layer structure of upper and lower closed assembly and the contact-making surface of two neighbouring layer diodes separates by insulating barrier 6, the negative electrode of each layer diode and anode line up perpendicular row respectively; Except the diode being positioned at the bottom, all diodes on its upper strata and insulating barrier are run through by two vertical through holes, and described two vertical through holes lay respectively at the negative electrode 3 of corresponding each diode and the position of anode 4; Described two vertical through holes hole walls deposit an insulating barrier 6 respectively; The metal 7 of the counter electrode of each layer diode of UNICOM is deposited in described two vertical through holes 2,3.
The three-dimensional interconnect architecture of the substrate GaN-based Schottky barrier diode device of Si is as shown in Figure 1 that two diode closed assemblies are interconnected, and the three-dimensional interconnect architecture of the substrate GaN-based Schottky barrier diode device of the Si shown in Fig. 3 is that two diode closed assemblies are interconnected.According to actual needs, can by interconnected for some each diode closed assemblies.
The three-dimensional interconnect architecture of the substrate GaN-based Schottky barrier diode device of another kind of Si, as shown in Figure 2, insulating layer deposition between neighbouring two diodes is positioned at negative electrode 3 and anode 4 place of the diode of below in correspondence, naked layer between the negative electrode 3 and anode 4 of the electrode layer of same diode.
Claims (3)
1.
the three-dimensional interconnect architecture of the substrate GaN-based Schottky barrier diode device of a kind of Si, comprise two or more diode, single diode comprises the Si substrate layer (1) arranged from bottom to up, GaN epitaxial layer (2), electrode layer, the negative electrode (3) of wherein said electrode layer is relative with anode (4), and be arranged in GaN epitaxial layer (2) at interval, it is characterized in that: two or more diode is bonded to the layer structure of upper and lower closed assembly, and the contact-making surface of two neighbouring layer diodes separates by insulating barrier (6), the negative electrode of each layer diode and anode line up perpendicular row respectively, except the diode being positioned at the bottom, all diodes on its upper strata and insulating barrier are run through by two vertical through holes, and described two vertical through holes lay respectively at the negative electrode (3) of corresponding each diode and the position of anode (4), described two vertical through holes hole walls deposit an insulating barrier (6) respectively, the metal (7) of the counter electrode of each layer diode of UNICOM is deposited in described two vertical through holes (2,3).
2.
the three-dimensional interconnect architecture of the substrate GaN-based Schottky barrier diode device of Si according to claim 1, is characterized in that: in the vertical through holes of the negative electrode of each diode of described correspondence, the metal material of deposition is Ti
,w, Ni, Al or
cu.
3.
the substrate GaN-based Schottky barrier diode device of Si according to claim 1 and 2, it is characterized in that: the insulating layer deposition between described neighbouring two diodes is positioned at negative electrode (3) and anode (4) place of the diode of below in correspondence, be positioned at naked layer between the negative electrode (3) of the electrode layer of same diode and anode (4).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420688186.XU CN204332951U (en) | 2014-11-14 | 2014-11-14 | The three-dimensional interconnect architecture of the substrate GaN-based Schottky barrier diode device of a kind of Si |
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|---|---|---|---|
| CN201420688186.XU CN204332951U (en) | 2014-11-14 | 2014-11-14 | The three-dimensional interconnect architecture of the substrate GaN-based Schottky barrier diode device of a kind of Si |
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| Publication Number | Publication Date |
|---|---|
| CN204332951U true CN204332951U (en) | 2015-05-13 |
Family
ID=53169276
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|---|---|---|---|
| CN201420688186.XU Withdrawn - After Issue CN204332951U (en) | 2014-11-14 | 2014-11-14 | The three-dimensional interconnect architecture of the substrate GaN-based Schottky barrier diode device of a kind of Si |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465631A (en) * | 2014-11-14 | 2015-03-25 | 中山大学 | Three-dimensional interconnection structure and method of Si substrate GaN-based Schottky barrier diode device |
-
2014
- 2014-11-14 CN CN201420688186.XU patent/CN204332951U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465631A (en) * | 2014-11-14 | 2015-03-25 | 中山大学 | Three-dimensional interconnection structure and method of Si substrate GaN-based Schottky barrier diode device |
| CN104465631B (en) * | 2014-11-14 | 2017-08-22 | 中山大学 | A kind of three-dimensional interconnection architecture of substrate GaN-based Schottky barrier diode devices of Si and three-dimensional interconnected method |
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|---|---|---|---|
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| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20150513 Effective date of abandoning: 20170822 |