CN204305452U - Free ground film and comprise the shielded line plate of free ground film - Google Patents
Free ground film and comprise the shielded line plate of free ground film Download PDFInfo
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- CN204305452U CN204305452U CN201420577232.9U CN201420577232U CN204305452U CN 204305452 U CN204305452 U CN 204305452U CN 201420577232 U CN201420577232 U CN 201420577232U CN 204305452 U CN204305452 U CN 204305452U
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Abstract
The utility model discloses a kind of free ground film and comprise the shielded line plate of free ground film.Free ground film comprises at least one deck conductive layer.Comprise the shielded line plate of free ground film, it is provided with electromagnetic shielding film on a printed-wiring board, and the surface of electromagnetic shielding film is provided with free ground film.Free ground film of the present utility model changes traditional bonding mode, can increase substantially production reliability, reduce costs simultaneously.
Description
Technical field
The utility model relates to a kind of free ground film and comprises the shielded line plate of free ground film.
Background technology
Flexible printed circuit (FPC) is as a kind of special basic material connecting electronic devices and components, and it has gently, thin, various structures, the excellent properties such as resist bending.Can be widely used in folding cell phone, liquid crystal display, notebook computer, band carries the high-end fields such as IC base plate for packaging.
In recent years, along with developing rapidly of electronics industry, electronic product is further to miniaturization, lightweight, assembling densification develops, under the high frequency trend of communication system drives, 3rd generation mobile phone enter the market in a large number, in addition, the integration of cell-phone function also will impel mobile phone component sharply high-frequency high-speed.The high frequency of mobile phone key component certainly will cannot be avoided.The component internal caused under high frequency and driving at a high speed and the electromagnetic interference problem of outside will be serious gradually, therefore, the important index of function flexible electric circuit board one is electromagnetic shielding (EMI Shielding), and screened film becomes the requisite auxiliary material of wiring board.
In wiring board industry, all adopt coverlay on wiring board to paste electromagnetic shielding film after windowing, the noise produced by holding wire imports wiring board stratum by screened film, realizes shield assembly inside and external electromagnetic interference.This using method requires to design ground connection PAD in the circuit board, must at coverlay uplifting window, and the strict coverlay that controls overflows glue amount.Not only increase the complexity of wiring board processing technology, the size of ground connection PAD can affect shield effectiveness simultaneously.Maximum shortcoming is: must design ground connection PAD, so can not make full use of the space of wiring board.
Publication number is CN102026529 A, name is called that the Chinese utility model patent of " screened film, have the shielding distributing board of this screened film, the earthing method of screened film " discloses a kind of conductive member, this conductive member comprise under contact condition in order to the metal level that is connected with external ground component and the conductivity following layer comprising electroconductive particle, ground connection is the insulation cover layer relying on electroconductive particle to pierce through the screened film be attached thereto, and is finally connected with stratum.Although this method can realize the free ground connection of screened film, the above-mentioned technical difficulty of customer service is higher to the dimensional requirement of conducting particles, cost is higher.Special shape and the larger particle of diameter is needed to pierce through the insulation cover layer of screened film, require that the domain size distribution of conducting particles is more even simultaneously, if there is the conducting particles lower than average grain diameter, just there will be local and cannot pierce through screened film insulation cover layer, and then affect ground connection.
Utility model content
The purpose of this utility model is to provide a kind of free ground film and comprises shielded line plate and the earthing method of free ground film.
Technical solution adopted in the utility model is:
A kind of free ground film, comprises at least one deck conductive layer.
The side of described conductive layer is glue-line, and opposite side is strippable carrier film, and described glue-line is pure glue-line or conductive adhesive layer.
The surface of described conductive layer is smooth, and the gross thickness of conductive layer is 0.01-35 μm, and described glue-line is conductive adhesive layer, and its thickness is 0.2-20 μm;
Or at least on the conductive layer adjacent with glue-line, the face that this conductive layer contacts with glue-line is coarse, and roughness is 0.3-10 μm, the gross thickness of conductive layer is 0.01-35 μm, described glue-line to be thickness the be pure glue-line of 0.2-10 μm;
Or at least on the conductive layer adjacent with glue-line, the face that this conductive layer contacts with glue-line is coarse, and roughness is 0.3-10 μm, the gross thickness of conductive layer is 0.01-35 μm, described glue-line to be thickness the be conductive adhesive layer of 0.2-20 μm.
Described conductive layer material therefor is at least one in metal material, ferrite, graphite, carbon nano-tube, Graphene, described metal material is at least one in aluminium, titanium, zinc, iron, nickel, chromium, cobalt, copper, silver, gold, molybdenum, or is at least two kinds of alloys formed in above listed metal simple-substance; The material of described pure glue-line is at least one in modified epoxy class, modified acrylic acid, modified rubber class, modified thermoplastic polyimide, modified polyurethane resinoid; The material of described conductive adhesive layer is filled conductive glue.
Described strippable carrier film is strippable metal forming carrier band, or has the polyester support film of dispersion and release effect.
High temperature resistant antioxidation coating is provided with between described conductive layer and peelable carrier film.
The material of described high temperature resistant antioxidation coating and thickness range are one of following three kinds of situations:
1. the material of described high temperature resistant antioxidation coating is the one in metal material, ferrite, graphite, carbon nano-tube, Graphene, silver slurry, and described metal material is the one in these metal simple-substances: aluminium, titanium, zinc, iron, nickel, chromium, cobalt, copper, silver, gold, molybdenum; Or be at least two kinds of alloys formed in these metal simple-substances; The thickness of high temperature resistant antioxidation coating is 0.01-5 micron;
2. the material of described high temperature resistant antioxidation coating is glue class material, and described glue class material is at least one in modified epoxy class, modified acrylic acid, modified rubber class, modified thermoplastic polyimide, modified polyurethane resinoid; Its thickness is 0.1-2 micron;
3. the material of described high temperature resistant antioxidation coating is filled conductive glue, and its thickness is 0.1-5 micron.
Comprise the shielded line plate of free ground film, it is provided with electromagnetic shielding film on a printed-wiring board, and the surface of electromagnetic shielding film is provided with described free ground film.
The beneficial effects of the utility model are: free ground film of the present utility model changes traditional bonding mode, can increase substantially production reliability, reduce costs simultaneously.
Specifically:
Use the shielded line plate of ground film of the present utility model, its earthing mode is divided into three kinds:
When glue-line is conductive adhesive layer, and the surface of conductive layer is smooth, and containing conducting particles in conductive adhesive layer, conducting particles is freely agglomerated into certain size, can pierce through the insulating barrier of screened film, be connected with screen, be grounded;
When glue-line is pure glue-line, the face of the conductive layer at least contacted with pure glue-line is coarse, not containing conducting particles in pure glue-line, is pierced through the insulating barrier of screened film, is connected with screen, be grounded by the matsurface of conductive layer;
When glue-line is conductive adhesive layer, the face of the conductive layer at least contacted with conductive adhesive layer is coarse, the bulky grain conducting particles then formed by the reunion in the matsurface of conductive layer and conductive adhesive layer works in coordination with the insulating barrier piercing through screened film, be connected with screen, be grounded, and then increase substantially production reliability, reduce costs simultaneously.
Therefore, the free ground film of pressing on shielded line plate, makes screened film be connected with the conductive layer of free ground film, realizes any ground connection.Change traditional bonding mode, save coverlay and window and control coverlay and to overflow the related process of glue amount, ensure shield effectiveness.Meanwhile, the short space of wiring board can be made full use of, wiring board stratum is all designed to holding wire, increase line density, realize wiring board miniaturization, multifunction.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of free ground film of the utility model.
Fig. 2 is the structural representation of a kind of free ground film of the utility model.
Fig. 3 is the structural representation of a kind of free ground film of the utility model.
Fig. 4 is the structural representation of a kind of free ground film of the utility model.
Fig. 5 is the structural representation of a kind of free ground film of the utility model.
Fig. 6 is the structural representation of a kind of free ground film of the utility model.
Fig. 7 is a kind of structural representation comprising the shielded line plate of free ground film of the utility model.
Fig. 8 is a kind of structural representation comprising the shielded line plate of free ground film of the utility model.
Fig. 9 is a kind of structural representation comprising the shielded line plate of free ground film of the utility model.
Embodiment
A kind of free ground film, comprises at least one deck conductive layer.
The side of described conductive layer is glue-line, and opposite side is strippable carrier film, and described glue-line is pure glue-line or conductive adhesive layer.
The surface of described conductive layer is smooth, and the gross thickness of conductive layer is 0.01-35 μm (preferred, to be 0.1-10 μm), and described glue-line is conductive adhesive layer, and its thickness is 0.2-20 μm (preferred, to be 0.5-10 μm);
Or at least on the conductive layer adjacent with glue-line, the face that this conductive layer contacts with glue-line is coarse, it is (preferred that roughness is 0.3-10 μm, roughness is 0.3-8 μm), the gross thickness of conductive layer be 0.01-35 μm (preferred, for 0.1-10 μm), described glue-line to be thickness the be pure glue-line (preferred, to be 0.5-10 μm) of 0.2-10 μm;
Or at least on the conductive layer adjacent with glue-line, the face that this conductive layer contacts with glue-line is coarse, it is (preferred that roughness is 0.3-10 μm, roughness is 0.3-8 μm), the gross thickness of conductive layer be 0.01-35 μm (preferred, for 0.1-10 μm), described glue-line to be thickness the be conductive adhesive layer (preferred, to be 0.5-10 μm) of 0.2-20 μm.
Described conductive layer material therefor is at least one in metal material, ferrite, graphite, carbon nano-tube, Graphene, described metal material is at least one in aluminium, titanium, zinc, iron, nickel, chromium, cobalt, copper, silver, gold, molybdenum, or is at least two kinds of alloys formed in above listed metal simple-substance; The material of described pure glue-line is at least one in modified epoxy class, modified acrylic acid, modified rubber class, modified thermoplastic polyimide, modified polyurethane resinoid; The material of described conductive adhesive layer is filled conductive glue; It is made up of the mixture of conducting particles and glue, and preferably, in conductive adhesive layer, the percent by volume that conducting particles accounts for glue is that 2%-80%(is preferred, is 5-80%), the particle diameter of conducting particles is 0.1-15 μm.
Described strippable carrier film is strippable metal forming carrier band, or has the polyester support film of dispersion and release effect.
The manufacture method of described strippable metal forming carrier band is as follows:
1) surface treatment is carried out to metal foil substrate, make its surface tension be 40-90 dyne;
2) vacuum-coating is formed in a side of matrix;
3) carry out lightization process on the surface of vacuum-coating, form surface metal bright layer.
High temperature resistant antioxidation coating is provided with between described conductive layer and peelable carrier film.
The material of described high temperature resistant antioxidation coating, thickness range, generation type are one of following three kinds of situations:
1. the material of described high temperature resistant antioxidation coating is the one in metal material, ferrite, graphite, carbon nano-tube, Graphene, silver slurry, and described metal material is the one in these metal simple-substances: aluminium, titanium, zinc, iron, nickel, chromium, cobalt, copper, silver, gold, molybdenum; Or be at least two kinds of alloys formed in these metal simple-substances; The thickness of high temperature resistant antioxidation coating is 0.01-5 micron;
The generation type forming high temperature resistant antioxidation coating at peelable carrier film one deck is: the combination process of at least two kinds in a kind of or above technique in chemical plating, PVD, CVD, evaporation plating, sputtering plating, plating;
2. the material of described high temperature resistant antioxidation coating is glue class material, and described glue class material is at least one in modified epoxy class, modified acrylic acid, modified rubber class, modified thermoplastic polyimide, modified polyurethane resinoid; Its thickness is 0.1-2 micron;
3. the material of described high temperature resistant antioxidation coating is filled conductive glue, and its thickness is 0.1-5 micron.
2. and 3. for, high temperature resistant antioxidation coating is formed for coating Post RDBMS at peelable carrier film one deck.
Comprise the shielded line plate of free ground film, it is provided with electromagnetic shielding film on a printed-wiring board, and the surface of electromagnetic shielding film is provided with described free ground film.
The earthing method of wiring board, described electromagnetic shielding film comprises screen, setting insulating barrier on the shielding layer, adopts one of following three kinds of modes to carry out ground connection:
The surface of a, described conductive layer is smooth, the gross thickness of conductive layer be 0.01-35 μm (preferred, for 0.1-10 μm), to be thickness that the mixture of conducting particles and glue is made be described glue-line that the conductive adhesive layer of 0.2-20 μm is (preferred, for 0.5-10 μm), in this conductive adhesive layer, the percent by volume that conducting particles accounts for glue is that 2%-80%(is preferred, for 5-80%), the particle diameter of conducting particles is 0.1-15 μm; This kind of earthing mode is: the conducting particles in conductive adhesive layer is reunited for larger conducting particles, and utilizes its insulating barrier piercing through electromagnetic shielding film and be connected with screen;
B, at least on the conductive layer adjacent with glue-line, the face that this conductive layer contacts with glue-line is coarse, it is (preferred that roughness is 0.3-10 μm, roughness is 0.3-8 μm), the gross thickness of conductive layer be 0.01-35 μm (preferred, for 0.1-10 μm), the described glue-line pure glue-line that to be thickness that glue is made be 0.2-10 μm (preferred, to be 0.5-10 μm); This kind of earthing mode is: the insulating barrier being pierced through screened film by the matsurface of conductive layer, is connected with screen to make conductive layer;
C, at least on the conductive layer adjacent with glue-line, the face that this conductive layer contacts with glue-line is coarse, it is (preferred that roughness is 0.3-10 μm, roughness is 0.3-8 μm), the gross thickness of conductive layer be 0.01-35 μm (preferred, for 0.1-10 μm), described glue-line to be thickness that the mixture of glue and conducting particles is made be 0.2-20 μm (preferred, for 0.5-10 μm) conductive adhesive layer, in this conductive adhesive layer, the percent by volume that conducting particles accounts for glue is 2%-80%, and the particle diameter of conducting particles is 0.1-15 μm; This kind of earthing mode is: the conducting particles in conductive adhesive layer is reunited for bulky grain conducting particles, utilizes the matsurface of bulky grain conducting particles and conductive layer to work in coordination with the insulating barrier piercing through screened film, and is connected with screen.
The lower limit of the thickness of the insulating barrier of electromagnetic shielding film is 0.2 μm, the upper limit is 15 μm, preferably, be 3-10 μm, further preferably, for above three kinds of different earthing modes, upper thickness limit can be carried out coupling and be met, and is namely conductive adhesive layer for a, glue-line, and the conducting particles in conductive adhesive layer is reunited for bulky grain, its upper thickness limit can meet the independent insulation-piercing layer of conducting particles bulky grain and contact with screen, thus is grounded; The independent insulation-piercing layer of b, conductive layer matsurface is grounded, and its upper thickness limit can meet the independent insulation-piercing layer of conductive layer matsurface and contact with screen, thus is grounded; C, glue-line are conductive adhesive layer, and the conducting particles in conductive adhesive layer is reunited for bulky grain, and its upper thickness limit can meet conductive layer matsurface and works in coordination with insulation-piercing layer with bulky grain conducting particles and contact in screen, thus is grounded.
Electromagnetic shielding film described in the utility model is product of the prior art, it comprises interconnective insulating barrier and conductive layer, as number of patent application is: 201410016769.2, denomination of invention is: electromagnetic shielding film and comprise the electromagnetic shielding film introduced in the manufacture method of the wiring board of screened film.Or be: 201420022753.8 that utility model name is called as number of patent application: printed substrate electromagnetic shielding film and comprise the structure of the screened film described in the printed substrate of screened film.
Corresponding, a kind of manufacture method of free ground film, making step is as follows:
1) conductive high temperature resistance antioxidation coating is formed in the side of described strippable metal forming carrier band;
2) at least one deck conductive layer is formed at the opposite side of high temperature resistant antioxidation coating;
3) glue-line is formed on the electrically conductive.
A manufacture method for free ground film, making step is as follows:
1) the high temperature resistant antioxidation coating of resin-based is formed in the described side with the polyester support film of dispersion and release effect;
2) at least one deck conductive layer is formed at the opposite side of high temperature resistant antioxidation coating;
3) glue-line is formed on the electrically conductive.
Below in conjunction with specific embodiment, the utility model is described further:
embodiment 1:
As shown in Figure 1, a kind of free ground film, be provided with high temperature resistant antioxidation coating 2 in the side of peelable carrier film 1, the opposite side of high temperature resistant antioxidation coating 2 is provided with conductive layer 3, conductive layer 3 is made up of conductive layer 31 and conductive layer 32, and the opposite side of conductive layer 32 is provided with conductive adhesive layer 4; Consisting of of described peelable carrier film 1: metal foil substrate 10, vacuum-coating 12 and metal polish layer 13.
Wherein, the manufacture method of peelable carrier film is as follows:
1) surface treatment is carried out to metal foil substrate, make its surface tension be 40-90 dyne;
2) vacuum-coating is formed in a side of matrix;
3) carry out lightization process on the surface of vacuum-coating, form surface metal bright layer.
Corresponding, a kind of manufacture method of free ground film, concrete making step is as follows:
1) form high temperature resistant antioxidation coating 2(in peelable carrier film 1 side and namely on the metal polish layer of carrier film, form high temperature resistant antioxidation coating); Wherein, the thickness of described high temperature resistant antioxidation coating is 0.01-5 micron, preferred 0.1-1 micron; The material of described high temperature resistant antioxidation coating 2 is the one in metal material, ferrite, graphite, carbon nano-tube, Graphene, silver slurry, and described metal material is the one in these metal simple-substances: aluminium, titanium, zinc, iron, nickel, chromium, cobalt, copper, silver, gold, molybdenum; Or be at least two kinds of alloys formed in these metal simple-substances; The generation type of described high temperature resistant antioxidation coating 2 is: the combination process of at least two kinds in a kind of or above technique in chemical plating, PVD, CVD, evaporation plating, sputtering plating, plating;
2) conductive layer 31 is formed at the opposite side of high temperature resistant antioxidation coating 2; Wherein, the thickness of described conductive layer 31 is 0.01-1 micron, preferred 0.1-1 micron; Conductive layer 31 material therefor is at least one in metal material, ferrite, graphite, carbon nano-tube, Graphene, and described metal material is the one in these metal simple-substances: aluminium, titanium, zinc, iron, nickel, chromium, cobalt, copper, silver, gold, molybdenum; Or be at least two kinds of alloys formed in these metal simple-substances; The generation type of described conductive layer 31 is chemical plating mode: the combination process of at least two kinds in a kind of or above technique in chemical plating, PVD, CVD, evaporation plating, sputtering plating, plating;
3) conductive layer 32 is formed on conductive layer 31 surface; Wherein, described conductive layer thickness is 0.01-35 micron, preferred 0.5-10 micron; Conductive layer 32 material therefor is the one in metal material, ferrite, graphite, carbon nano-tube, Graphene, and described metal material is the one in these metal simple-substances: aluminium, titanium, zinc, iron, nickel, chromium, cobalt, copper, silver, gold, molybdenum; Or be at least two kinds of alloys formed in these metal simple-substances; The generation type of described conductive layer 32 is: the combination process of at least two kinds in a kind of or above technique in chemical plating, PVD, CVD, evaporation plating, sputtering plating, plating;
4) conductive adhesive layer 4 is formed on conductive layer 32 surface; Wherein, described conductive adhesive layer 4 is made up (method for making is common practise, such as, be coated with Post RDBMS) of the mixture of glue and conducting particles, and thickness is 0.2-20 micron, preferred 0.5-10 micron; Conductive adhesive layer 4 glue used is at least one in modified epoxy class, modified acrylic acid, modified rubber class, modified thermoplastic polyimide, modified polyurethane resinoid; Conducting particles is at least one formed in larger sized following particle of can reuniting: carbon, silver, nickel, copper, nickel gold, copper nickel, copper nickel gold, the particle diameter of conducting particles is 0.1-15 micron, preferred 0.2-10 micron, and the volume ratio of conducting particles and glue is 2% to 80%, preferably, be 5%-80%.
embodiment 2:
As shown in Figure 2, a kind of free ground film, be provided with high temperature resistant antioxidation coating 2 in the side of peelable carrier film 1, the opposite side of high temperature resistant antioxidation coating 2 is provided with conductive layer 3, conductive layer 3 is made up of conductive layer 31 and conductive layer 32, and the opposite side of conductive layer 32 is provided with pure glue-line 4.Consisting of of described peelable carrier film 1: metal foil substrate 10, vacuum-coating 12 and metal polish layer 13.
Wherein, the manufacture method of peelable carrier film is as follows:
1) surface treatment is carried out to metal foil substrate, make its surface tension be 40-90 dyne;
2) vacuum-coating is formed in a side of matrix;
3) carry out lightization process on the surface of vacuum-coating, form surface metal bright layer.
Corresponding, a kind of manufacture method of free ground film, it concrete making step comprised is as follows:
1) form high temperature resistant antioxidation coating 2(in peelable carrier film 1 side and namely on the metal polish layer of carrier film, form high temperature resistant antioxidation coating); Wherein, the thickness of described high temperature resistant antioxidation coating is 0.01-5 micron, preferred 0.1-1 micron; The material of described high temperature resistant antioxidation coating 2 is the one in metal material, ferrite, graphite, carbon nano-tube, Graphene, silver slurry, and described metal material is the one in these metal simple-substances: aluminium, titanium, zinc, iron, nickel, chromium, cobalt, copper, silver, gold, molybdenum; Or be at least two kinds of alloys formed in these metal simple-substances; The generation type of described high temperature resistant antioxidation coating 2 is: the combination process of at least two kinds in a kind of or above technique in chemical plating, PVD, CVD, evaporation plating, sputtering plating, plating;
2) conductive layer 31 is formed at the opposite side of high temperature resistant antioxidation coating 2; Wherein, the thickness of described conductive layer 31 is 0.01-1 micron, preferred 0.1-1 micron; Conductive layer 31 material therefor is at least one in metal material, ferrite, graphite, carbon nano-tube, Graphene, and described metal material is the one in these metal simple-substances: aluminium, titanium, zinc, iron, nickel, chromium, cobalt, copper, silver, gold, molybdenum; Or be at least two kinds of alloys formed in these metal simple-substances; The generation type of described conductive layer 31 is: the combination process of at least two kinds in a kind of or above technique in chemical plating, PVD, CVD, evaporation plating, sputtering plating, plating;
3) conductive layer 32 is formed on conductive layer 31 surface; Wherein, described conductive layer 32 thickness is 0.01-35 micron, preferred 0.1-10 micron; Conductive layer 32 material therefor is the one in metal material, ferrite, graphite, carbon nano-tube, Graphene, and described metal material is the one in these metal simple-substances: aluminium, titanium, zinc, iron, nickel, chromium, cobalt, copper, silver, gold, molybdenum; Or be at least two kinds of alloys formed in these metal simple-substances; The generation type of described conductive layer 32 is: the combination process of at least two kinds in a kind of or above technique in chemical plating, PVD, CVD, evaporation plating, sputtering plating, plating;
4) alligatoring is carried out on conductive layer 32 surface: the method adopting copper foil of circuit board alligatoring, by first for the one side of conductive layer 32 alligatoring, Post RDBMS, then passivation, described alligatoring plating solution comprises alkali copper and acid copper plating solution; Or adopt the method for wiring board microetch, by first for the one side of conductive layer 32 alligatoring, then passivation; The surface roughness of conductive layer 32 is 0.3-10 micron, preferred 0.3-8 micron.Described micro-corrosion liquid be following in one: sulfuric acid-dioxygen water type etching solution, sodium peroxydisulfate etching solution, copper chloride etching solution, iron chloride etching solution, the alkaline etching liquid of copper ammonium chloride-ammonia-water systems, organic basic etching solution;
5) pure glue-line 4 is formed on conductive layer 32 surface; Wherein, the thickness of described pure glue-line 4 is 0.2-10 micron, preferred 0.5-10 micron; Pure glue-line 4 material therefor is at least one in modified epoxy class, modified acrylic acid, modified rubber class, modified thermoplastic polyimide, modified polyurethane resinoid.
embodiment 3:
As shown in Figure 3, a kind of free ground film, be provided with high temperature resistant antioxidation coating 2 in the side of peelable carrier film 1, the opposite side of high temperature resistant antioxidation coating 2 is provided with conductive layer 3, conductive layer 3 is made up of conductive layer 31 and conductive layer 32, and the opposite side of conductive layer 32 is provided with conductive adhesive layer 4; Consisting of of described peelable carrier film 1: metal foil substrate 10, vacuum-coating 12 and metal polish layer 13.
Wherein, the manufacture method of peelable carrier film is as follows:
1) surface treatment is carried out to metal foil substrate, make its surface tension be 40-90 dyne;
2) vacuum-coating is formed in a side of matrix;
3) carry out lightization process on the surface of vacuum-coating, form surface metal bright layer.
A manufacture method for free ground film, it concrete making step comprised is as follows:
1) form high temperature resistant antioxidation coating 2(in peelable carrier film 1 side and namely on the metal polish layer of carrier film, form high temperature resistant antioxidation coating); Wherein, the thickness of described high temperature resistant antioxidation coating is 0.01-5 micron, preferred 0.1-1 micron; The material of described high temperature resistant antioxidation coating 2 is the one in metal material, ferrite, graphite, carbon nano-tube, Graphene, silver slurry, and described metal material is the one in these metal simple-substances: aluminium, titanium, zinc, iron, nickel, chromium, cobalt, copper, silver, gold, molybdenum; Or be at least two kinds of alloys formed in these metal simple-substances; The generation type of described high temperature resistant antioxidation coating 2 is: the combination process of at least two kinds in a kind of or above technique in chemical plating, PVD, CVD, evaporation plating, sputtering plating, plating;
2) conductive layer 31 is formed at the opposite side of high temperature resistant antioxidation coating 2; Wherein, the thickness of described conductive layer 31 is 0.01-1 micron, preferred 0.1-1 micron; Conductive layer 31 material therefor is at least one in metal material, ferrite, graphite, carbon nano-tube, Graphene, and described metal material is the one in these metal simple-substances: aluminium, titanium, zinc, iron, nickel, chromium, cobalt, copper, silver, gold, molybdenum; Or be at least two kinds of alloys formed in these metal simple-substances; The generation type of described conductive layer 31 is: the combination process of at least two kinds in a kind of or above technique in chemical plating, PVD, CVD, evaporation plating, sputtering plating, plating.
3) conductive layer 32 is formed on conductive layer 31 surface; Wherein, described conductive layer 32 thickness is 0.01-35 micron, preferred 0.1-10 micron; Conductive layer 32 material therefor is the one in metal material, ferrite, graphite, carbon nano-tube, Graphene, and described metal material is the one in these metal simple-substances: aluminium, titanium, zinc, iron, nickel, chromium, cobalt, copper, silver, gold, molybdenum; Or be at least two kinds of alloys formed in these metal simple-substances; The generation type of described conductive layer 32 is: the combination process of at least two kinds in a kind of or above technique in chemical plating, PVD, CVD, evaporation plating, sputtering plating, plating;
4) alligatoring is carried out on conductive layer 32 surface: the method adopting copper foil of circuit board alligatoring, by first for the one side of conductive layer 32 alligatoring, Post RDBMS, then passivation, described alligatoring plating solution comprises alkali copper and acid copper plating solution; Or adopt the method for wiring board microetch, by first for the one side of conductive layer 32 alligatoring, then passivation; The surface roughness of conductive layer 32 is 0.3-10 micron, preferred 0.3-8 micron.Described micro-corrosion liquid be following in one: sulfuric acid-dioxygen water type etching solution, sodium peroxydisulfate etching solution, copper chloride etching solution, iron chloride etching solution, the alkaline etching liquid of copper ammonium chloride-ammonia-water systems, organic basic etching solution;
5) conductive adhesive layer 4 is formed on conductive layer 32 surface; Wherein, described conductive adhesive layer 4 is made up of the mixture of glue and conducting particles, and thickness is 0.2-20 micron, preferred 0.5-10 micron; Conductive adhesive layer 4 glue used is at least one in modified epoxy class, modified acrylic acid, modified rubber class, modified thermoplastic polyimide, modified polyurethane resinoid; Conducting particles is at least one formed in larger sized following particle of can reuniting: carbon, silver, nickel, copper, nickel gold, copper nickel, copper nickel gold, the particle diameter of conducting particles is 0.1-15 micron, preferred 0.2-10 micron, and the volume ratio of conducting particles and glue is 2% to 80%, preferably, be 5%-80%.
In above-described embodiment 1-3, peelable carrier film 1 also can be form on matrix 10 surface the thin layer that roughness is 0.3-7 micron, then successively vacuum-coating 12 and metal polish layer 13 is formed, the metal polish layer 13 of the peelable carrier film of gained 1 also has certain roughness thus, the follow-up surface at metal polish layer 13 forms high temperature resistant antioxidation coating 2, conductive layer 3 successively, make conductive layer 3 have certain roughness before alligatoring, strengthen the effect pierced through.Described roughness is that the thin layer of 0.3-7 micron comprises resin and filler, is changed the roughness of thin layer by filler, and the final roughness changing conductive layer 3, strengthens the effect pierced through.Resin is at least one in modified epoxy class, modified acrylic acid, modified rubber class, modified thermoplastic polyimide, modified polyurethane resinoid, and filler is at least one in silicon dioxide, aluminium hydroxide, calcium carbonate, titanium dioxide, aluminium oxide, magnesium hydroxide, mica powder, silicon powder, talcum powder, kaolin; The percent by volume that filler accounts for resin is 10%-80%.
embodiment 4:
As shown in Figure 4, a kind of free ground film, be provided with high temperature resistant antioxidation coating 2 in the side of peelable carrier film 1, the opposite side of high temperature resistant antioxidation coating 2 is provided with conductive layer 3, conductive layer 3 is made up of conductive layer 31 and conductive layer 32, and the opposite side of conductive layer 32 is provided with conductive adhesive layer 4; Described peelable carrier film is have release and polyester film that is peptizaiton.
A manufacture method for free ground film, concrete making step is as follows:
1) high temperature resistant antioxidation coating 2 is formed in peelable carrier film 1 side; Wherein, the thickness of described high temperature resistant antioxidation coating is 0.01-5 micron; Described high temperature resistant antioxidation coating 2 makes for glue or the mixture of glue and conducting particles is made, and described glue is at least one in modified epoxy class, modified acrylic acid, modified rubber class, modified thermoplastic polyimide, modified polyurethane resinoid; Conducting particles is at least one in carbon, silver, nickel, copper particle, nickel gold, copper nickel, copper nickel gold grain; Described high temperature resistant antioxidation coating 2 for glue make time, its thickness is preferably 0.1-2 micron; Described high temperature resistant antioxidation coating 2 is the mixture of glue and conducting particles when making, and the volume ratio of conducting particles and glue is 5% to 80%, and its thickness is preferably 0.1-5 micron;
2) conductive layer 31 is formed at the opposite side of high temperature resistant antioxidation coating 2; Wherein, the thickness of described conductive layer 31 is 0.01-1 micron, preferred 0.1-1 micron; Conductive layer 31 material therefor is at least one in metal material, ferrite, graphite, carbon nano-tube, Graphene, and described metal material is the one in these metal simple-substances: aluminium, titanium, zinc, iron, nickel, chromium, cobalt, copper, silver, gold, molybdenum; Or be at least two kinds of alloys formed in these metal simple-substances; The generation type of described conductive layer 31 is: the combination process of at least two kinds in a kind of or above technique in chemical plating, PVD, CVD, evaporation plating, sputtering plating, plating;
3) conductive layer 32 is formed on conductive layer 31 surface; Wherein, described conductive layer 32 thickness is 0.01-35 micron, preferred 0.1-10 micron; Conductive layer 32 material therefor is the one in metal material, ferrite, graphite, carbon nano-tube, Graphene, and described metal material is the one in these metal simple-substances: aluminium, titanium, zinc, iron, nickel, chromium, cobalt, copper, silver, gold, molybdenum; Or be at least two kinds of alloys formed in these metal simple-substances; The generation type of described conductive layer 32 is: the combination process of at least two kinds in a kind of or above technique in chemical plating, PVD, CVD, evaporation plating, sputtering plating, plating;
4) conductive adhesive layer 4 is formed on conductive layer 32 surface; Described conductive adhesive layer 4 is made up of the mixture of glue and conducting particles, and thickness is 0.2-20 micron, preferred 0.5-10 micron; Conductive adhesive layer 4 glue used is at least one in modified epoxy class, modified acrylic acid, modified rubber class, modified thermoplastic polyimide, modified polyurethane resinoid; Conducting particles is at least one formed in larger sized following particle of can reuniting: carbon, silver, nickel, copper, nickel gold, copper nickel, copper nickel gold, the particle diameter of conducting particles is 0.1-15 micron, preferred 0.2-10 micron, the volume ratio of conducting particles and glue is 2% to 80%; For 5%-80%.
embodiment 5:
As shown in Figure 5, a kind of free ground film, be provided with high temperature resistant antioxidation coating 2 in the side of peelable carrier film 1, the opposite side of high temperature resistant antioxidation coating 2 is provided with conductive layer 3, conductive layer 3 is made up of conductive layer 31 and conductive layer 32, and the opposite side of conductive layer 32 is provided with pure glue-line 4; Described peelable carrier film is have release and polyester film that is peptizaiton.
A manufacture method for free ground film, concrete making step is as follows:
1) high temperature resistant antioxidation coating 2 is formed in peelable carrier film 1 side; Wherein, the thickness of described high temperature resistant antioxidation coating is 0.01-5 micron; Described high temperature resistant antioxidation coating 2 makes for glue or the mixture of glue and conducting particles is made, and described glue is at least one in modified epoxy class, modified acrylic acid, modified rubber class, modified thermoplastic polyimide, modified polyurethane resinoid; Conducting particles is at least one in carbon, silver, nickel, copper particle, nickel gold, copper nickel, copper nickel gold grain; Described high temperature resistant antioxidation coating 2 for glue make time, its thickness is preferably 0.1-2 micron; Described high temperature resistant antioxidation coating 2 is the mixture of glue and conducting particles when making, and the volume ratio of conducting particles and glue is 5% to 80%, and its thickness is preferably 0.1-5 micron;
2) conductive layer 31 is formed at the opposite side of high temperature resistant antioxidation coating 2; Wherein, the thickness of described conductive layer 31 is 0.01-1 micron, preferred 0.1-1 micron; Conductive layer 31 material therefor is at least one in metal material, ferrite, graphite, carbon nano-tube, Graphene, and described metal material is the one in these metal simple-substances: aluminium, titanium, zinc, iron, nickel, chromium, cobalt, copper, silver, gold, molybdenum; Or be at least two kinds of alloys formed in these metal simple-substances; The generation type of described conductive layer 31 is: the combination process of at least two kinds in a kind of or above technique in chemical plating, PVD, CVD, evaporation plating, sputtering plating, plating;
3) conductive layer 32 is formed on conductive layer 31 surface; Described conductive layer 32 thickness is 0.01-35 micron, preferred 0.1-10 micron; Conductive layer 32 material therefor is the one in metal material, ferrite, graphite, carbon nano-tube, Graphene, and described metal material is the one in these metal simple-substances: aluminium, titanium, zinc, iron, nickel, chromium, cobalt, copper, silver, gold, molybdenum; Or be at least two kinds of alloys formed in these metal simple-substances; The generation type of described conductive layer 32 is: the combination process of at least two kinds in a kind of or above technique in chemical plating, PVD, CVD, evaporation plating, sputtering plating, plating;
4) alligatoring is carried out on conductive layer 32 surface: the method adopting copper foil of circuit board alligatoring, by first for the one side of conductive layer 32 alligatoring, Post RDBMS, then passivation, described alligatoring plating solution comprises alkali copper and acid copper plating solution; Or adopt the method for wiring board microetch, by first for the one side of conductive layer 32 alligatoring, then passivation; The surface roughness of conductive layer 32 is 0.3-10 micron, preferred 0.3-8 micron.Described micro-corrosion liquid be following in one: sulfuric acid-dioxygen water type etching solution, sodium peroxydisulfate etching solution, copper chloride etching solution, iron chloride etching solution, the alkaline etching liquid of copper ammonium chloride-ammonia-water systems, organic basic etching solution;
5) pure glue-line 4 is formed on conductive layer 32 surface; Described pure glue-line 4 is made for glue, and thickness is 0.2-10 micron, preferred 0.5-10 micron; Pure glue-line 4 glue used is at least one in modified epoxy class, modified acrylic acid, modified rubber class, modified thermoplastic polyimide, modified polyurethane resinoid.
embodiment 6:
As shown in Figure 6, a kind of free ground film, the side of its peelable carrier film 1 is provided with high temperature resistant antioxidation coating 2, and the opposite side of high temperature resistant antioxidation coating 2 is provided with conductive layer 3, conductive layer 3 is made up of conductive layer 31 and conductive layer 32, and the opposite side of conductive layer 32 is provided with conductive adhesive layer 4; Described peelable carrier film is have release and polyester film that is peptizaiton.
A manufacture method for free ground film, it concrete making step comprised is as follows:
1) high temperature resistant antioxidation coating 2 is formed in peelable carrier film 1 side; Wherein, the thickness of described high temperature resistant antioxidation coating is 0.01-5 micron; Described high temperature resistant antioxidation coating 2 makes for glue or the mixture of glue and conducting particles is made, and described glue is at least one in modified epoxy class, modified acrylic acid, modified rubber class, modified thermoplastic polyimide, modified polyurethane resinoid; Conducting particles is at least one in carbon, silver, nickel, copper particle, nickel gold, copper nickel, copper nickel gold grain; Described high temperature resistant antioxidation coating 2 for glue make time, its thickness is preferably 0.1-2 micron; Described high temperature resistant antioxidation coating 2 is the mixture of glue and conducting particles when making, and the volume ratio of conducting particles and glue is 5% to 80%, and its thickness is preferably 0.1-5 micron;
2) conductive layer 31 is formed at the opposite side of high temperature resistant antioxidation coating 2; Wherein, the thickness of described conductive layer 31 is 0.01-1 micron, preferred 0.1-1 micron; Conductive layer 31 material therefor is at least one in metal material, ferrite, graphite, carbon nano-tube, Graphene, and described metal material is the one in these metal simple-substances: aluminium, titanium, zinc, iron, nickel, chromium, cobalt, copper, silver, gold, molybdenum; Or be at least two kinds of alloys formed in these metal simple-substances; The generation type of described conductive layer 31 is: the combination process of at least two kinds in a kind of or above technique in chemical plating, PVD, CVD, evaporation plating, sputtering plating, plating;
3) conductive layer 32 is formed on conductive layer 31 surface; Wherein, described conductive layer 32 thickness is 0.01-35 micron, preferred 0.1-10 micron; Conductive layer 32 material therefor is the one in metal material, ferrite, graphite, carbon nano-tube, Graphene, and described metal material is the one in these metal simple-substances: aluminium, titanium, zinc, iron, nickel, chromium, cobalt, copper, silver, gold, molybdenum; Or be at least two kinds of alloys formed in these metal simple-substances; The generation type of described conductive layer 32 is: the combination process of at least two kinds in a kind of or above technique in chemical plating, PVD, CVD, evaporation plating, sputtering plating, plating;
4) alligatoring is carried out on conductive layer 32 surface: the method adopting copper foil of circuit board alligatoring, by first for the one side of conductive layer 32 alligatoring, Post RDBMS, then passivation, described alligatoring plating solution comprises alkali copper and acid copper plating solution; Or adopt the method for wiring board microetch, by first for the one side of conductive layer 32 alligatoring, then passivation; The surface roughness of conductive layer 32 is 0.3-10 micron, preferred 0.3-8 micron.Described micro-corrosion liquid be following in one: sulfuric acid-dioxygen water type etching solution, sodium peroxydisulfate etching solution, copper chloride etching solution, iron chloride etching solution, the alkaline etching liquid of copper ammonium chloride-ammonia-water systems, organic basic etching solution.
5) conductive adhesive layer 4 is formed on conductive layer 32 surface; Described conductive adhesive layer 4 is made up of the mixture of glue and conducting particles, and thickness is 0.2-20 micron, preferred 0.5-10 micron; Conductive adhesive layer 4 glue used is at least one in modified epoxy class, modified acrylic acid, modified rubber class, modified thermoplastic polyimide, modified polyurethane resinoid; Conducting particles is at least one formed in larger sized following particle of can reuniting: carbon, silver, nickel, copper, nickel gold, copper nickel, copper nickel gold, the particle diameter of conducting particles is 0.1-15 micron, preferred 0.2-10 micron, the volume ratio of conducting particles and glue is 2% to 80%; Preferably, be 5%-80%.
here is the embodiment that the earthing method of the shielded line plate containing free ground film of the present utility model illustrates:
embodiment 7:
As shown in Figure 7, a kind of shielded line plate used as the free ground film of embodiment 1 or 4 structure, free ground film and the wiring board compact siro spinning technology in a thickness direction comprising screened film 5, described screened film 5 comprises insulating barrier 51, screen 52, free ground film conductive layer 3(conductive layer is high temperature resistant antioxidation coating 2) be directly connected by the conducting particles in conductive adhesive layer 4 with the screen 52 of screened film.
Corresponding, a kind of earthing method comprising the shielded line plate of free ground film: comprise the following steps:
1) the free ground film method of embodiment 1 or embodiment 4 prepared and shielded line plate, at thickness direction hot-press solidifying, solidify 1 h after hot-press solidifying again at 160 DEG C; When the glue that conductive adhesive layer 4 is used is modified epoxy, the temperature and time of hot-press solidifying is respectively: 190 DEG C, 90s, when the glue that conductive adhesive layer 4 is used is acrylic resin modified: the temperature and time of hot-press solidifying is respectively: 170 DEG C, 90s;
2) conducting particles in the conductive adhesive layer 4 of the free ground film described in is agglomerated into large-size particle, pierces through the insulating barrier 51 of screened film 5, contacts, be grounded with the screen 52 of screened film 5.
Containing conducting particles in described conductive adhesive layer 4, conducting particles is freely reunited and is formed large-size particle, pierce through the insulating barrier 51 of screened film 5, contact with the screen 52 of screened film 5, be grounded, raw material design difficulty can be reduced, increase raw material and select the degree of freedom (not limiting particle diameter and the domain size distribution of conducting particles).
embodiment 8:
As shown in Figure 8, a kind of shielded line plate used as the free ground film of embodiment 2 or 5 structure, free ground film and the wiring board compact siro spinning technology in a thickness direction comprising screened film 5, described screened film 5 comprises insulating barrier 51, screen 52, free ground film conductive layer 3(conductive layer is high temperature resistant antioxidation coating 2) be directly connected by the matsurface of conductive layer 3 with the screen 52 of screened film.
Corresponding, a kind of earthing method comprising the shielded line plate of free ground film: comprise the following steps:
1) the free ground film method of embodiment 2 or embodiment 5 prepared and shielded line plate, at thickness direction hot-press solidifying, solidify 1 h after hot-press solidifying again at 160 DEG C; When pure glue-line 4 material is modified epoxy, the temperature and time of hot-press solidifying is respectively: 190 DEG C, 90s, when pure glue-line 4 material is acrylic resin modified: the temperature and time of hot-press solidifying is respectively: 170 DEG C, 90s;
2) part for the matsurface of the conductive layer 3 of the free ground film described in pierces through the insulating barrier 51 of screened film 5, contacts, be grounded with the screen 52 of screened film 5.
Not containing conducting particles in described pure glue-line 4, the matsurface of conductive layer 3 is relied on to pierce through the insulating barrier 51 of screened film 5, contact with the screen 52 of screened film 5, be grounded, the ground connection reliability (avoiding the inhomogeneities of conducting particles particle diameter) of product can be improved, reduce raw material design difficulty (not needing to control the particle diameter of conducting particles), can significantly reduce costs simultaneously.
embodiment 9:
As shown in Figure 9, a kind of shielded line plate used as the free ground film of embodiment 3 or 6 structure, free ground film and the wiring board compact siro spinning technology in a thickness direction comprising screened film 5, described screened film 5 comprises insulating barrier 51, screen 52, for high temperature resistant antioxidation coating 2 on free ground film conductive layer 3(conductive layer) contact with the acting in conjunction of screened film screen 52 by the matsurface of the conducting particles in conductive adhesive layer 4 and conductive layer 3.
Corresponding, a kind of earthing method comprising the shielded line plate of free ground film: comprise the following steps:
1) the free ground film method of embodiment 3 or embodiment 6 prepared and shielded line plate, at thickness direction hot-press solidifying, solidify 1 h after hot-press solidifying again at 160 DEG C; When the glue material that conductive adhesive layer 4 is used is modified epoxy, the temperature and time of hot-press solidifying is respectively: 190 DEG C, 90s, when the glue material that conductive adhesive layer 4 is used is acrylic resin modified: the temperature and time of hot-press solidifying is respectively: 170 DEG C, 90s;
2) conducting particles in the matsurface of the conductive layer 3 of the free ground film described in and conductive adhesive layer 4 pierces through the insulating barrier 51 of screened film 5 jointly, contacts, be grounded with the screen 52 of screened film 5.
Containing a small amount of conducting particles in described adhesive film 4, the conducting particles in the matsurface of the conductive layer 3 of free ground film and conductive adhesive layer 4 is relied on jointly to pierce through the insulating barrier 51 of screened film 5, contact with the screen 52 of screened film 5, be grounded, the ground connection reliability (avoiding the inhomogeneities of conducting particles particle diameter) of product can be ensured further, reduce earth resistance; Reduce raw material design difficulty (not needing the conducting particles deliberately selecting particle diameter larger).
Claims (8)
1. a free ground film, is characterized in that: comprise at least one deck conductive layer.
2. the free ground film of one according to claim 1, is characterized in that: the side of described conductive layer is glue-line, and opposite side is strippable carrier film, and described glue-line is pure glue-line or conductive adhesive layer.
3. the free ground film of one according to claim 2, is characterized in that:
The surface of described conductive layer is smooth, and the gross thickness of conductive layer is 0.01-35 μm, and described glue-line is conductive adhesive layer, and its thickness is 0.2-20 μm;
Or at least on the conductive layer adjacent with glue-line, the face that this conductive layer contacts with glue-line is coarse, and roughness is 0.3-10 μm, the gross thickness of conductive layer is 0.01-35 μm, described glue-line to be thickness the be pure glue-line of 0.2-10 μm;
Or at least on the conductive layer adjacent with glue-line, the face that this conductive layer contacts with glue-line is coarse, and roughness is 0.3-10 μm, the gross thickness of conductive layer is 0.01-35 μm, described glue-line to be thickness the be conductive adhesive layer of 0.2-20 μm.
4. the free ground film of one according to claim 2, it is characterized in that: described conductive layer material therefor is the one in metal material, ferrite, graphite, carbon nano-tube, Graphene, described metal material is the one in aluminium, titanium, zinc, iron, nickel, chromium, cobalt, copper, silver, gold, molybdenum, or is at least two kinds of alloys formed in above listed metal simple-substance; The material of described pure glue-line is the one in modified epoxy class, modified acrylic acid, modified rubber class, modified thermoplastic polyimide, modified polyurethane resinoid; The material of described conductive adhesive layer is filled conductive glue.
5. the free ground film of one according to claim 2, is characterized in that: described strippable carrier film is strippable metal forming carrier band, or has the polyester support film of dispersion and release effect.
6. the free ground film of one according to claim 2, is characterized in that: be provided with high temperature resistant antioxidation coating between described conductive layer and peelable carrier film.
7. the free ground film of one according to claim 6, is characterized in that: the material of described high temperature resistant antioxidation coating and thickness range are one of following three kinds of situations:
1. the material of described high temperature resistant antioxidation coating is the one in metal material, ferrite, graphite, carbon nano-tube, Graphene, silver slurry, and described metal material is the one in these metal simple-substances: aluminium, titanium, zinc, iron, nickel, chromium, cobalt, copper, silver, gold, molybdenum; Or be at least two kinds of alloys formed in these metal simple-substances; The thickness of high temperature resistant antioxidation coating is 0.01-5 micron;
2. the material of described high temperature resistant antioxidation coating is glue class material, and described glue class material is the one in modified epoxy class, modified acrylic acid, modified rubber class, modified thermoplastic polyimide, modified polyurethane resinoid; Its thickness is 0.1-2 micron;
3. the material of described high temperature resistant antioxidation coating is filled conductive glue, and its thickness is 0.1-5 micron.
8. comprise the shielded line plate of free ground film, it is characterized in that: it is provided with electromagnetic shielding film on a printed-wiring board, the surface of electromagnetic shielding film is provided with the free ground film according to any one of claim 1-6.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420577232.9U CN204305452U (en) | 2014-10-08 | 2014-10-08 | Free ground film and comprise the shielded line plate of free ground film |
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| CN201420577232.9U CN204305452U (en) | 2014-10-08 | 2014-10-08 | Free ground film and comprise the shielded line plate of free ground film |
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| CN204305452U true CN204305452U (en) | 2015-04-29 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104332217A (en) * | 2014-10-08 | 2015-02-04 | 广州方邦电子有限公司 | Free ground film and manufacturing method thereof, and shielding circuit board including free ground film and ground method thereof |
| CN106612609A (en) * | 2015-10-26 | 2017-05-03 | 昆山雅森电子材料科技有限公司 | Light and thin type black conductive adhesive film |
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2014
- 2014-10-08 CN CN201420577232.9U patent/CN204305452U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104332217A (en) * | 2014-10-08 | 2015-02-04 | 广州方邦电子有限公司 | Free ground film and manufacturing method thereof, and shielding circuit board including free ground film and ground method thereof |
| WO2016054864A1 (en) * | 2014-10-08 | 2016-04-14 | 广州方邦电子有限公司 | Free grounding film and manufacturing method therefor, and shielding circuit board including free grounding film and grounding method |
| US10159141B2 (en) | 2014-10-08 | 2018-12-18 | Guangzhou Fang Bang Electronics Co., Ltd. | Free grounding film and manufacturing method therefor, and shielding circuit board including free grounding film and grounding method |
| CN106612609A (en) * | 2015-10-26 | 2017-05-03 | 昆山雅森电子材料科技有限公司 | Light and thin type black conductive adhesive film |
| CN106612609B (en) * | 2015-10-26 | 2024-03-26 | 昆山雅森电子材料科技有限公司 | Light thin black conductive adhesive film |
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Address after: 510530, A5 building, No. 11, Kaiyuan Avenue, Guangzhou hi tech Industrial Development Zone, Guangdong, Guangzhou, Sixth Patentee after: GUANGZHOU FANGBANG ELECTRONICS CO., LTD. Address before: 510530, A5 building, No. 11, Kaiyuan Avenue, Guangzhou hi tech Industrial Development Zone, Guangdong, Guangzhou, Sixth Patentee before: Guangzhou Fangbang Electronic Co., Ltd. |