CN204303816U - Curved surface aluminium silicon carbide substrate and there is the IGBT module of this substrate - Google Patents
Curved surface aluminium silicon carbide substrate and there is the IGBT module of this substrate Download PDFInfo
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- CN204303816U CN204303816U CN201520002405.9U CN201520002405U CN204303816U CN 204303816 U CN204303816 U CN 204303816U CN 201520002405 U CN201520002405 U CN 201520002405U CN 204303816 U CN204303816 U CN 204303816U
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Abstract
The utility model provides a kind of curved surface aluminium silicon carbide substrate and has the IGBT module of this substrate, this curved surface aluminium silicon carbide substrate, and substrate is aluminium silicon carbide substrate, and substrate comprises: first surface and second, and first surface and second are two opposite faces; First surface is dispersive stress face, and second is fitting surface; The longitudinal cross-section of first surface is camber line, and the central area of first surface outwardly; Substrate periphery is provided with multiple installation U-shaped draw-in groove.One side in two opposite faces that the substrate area that the utility model provides is larger is the curved surface that cross section has radian, makes stress distribution suffered by the substrate after assembling even.Simultaneously curved surface can also reduce the deflection of central point near zone on substrate, thus the physical surface that the IGBT module making to adopt this substrate mounting to obtain is more stable, global reliability is strengthened.
Description
Technical field
The utility model relates to electronic apparatus encapsulation field, especially, relates to a kind of curved surface aluminium silicon carbide substrate and has the IGBT module of this substrate.
Background technology
The compound full-control type voltage driven type power semiconductor that IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) is made up of BJT (double pole triode) and MOS (insulating gate type field effect tube).IGBT module, as a kind of Primary Component of transformation of electrical energy, has been widely applied in the industries such as locomotive traction, industrial frequency conversion, wind-powered electricity generation and photovoltaic at present.
Along with the lifting of IGBT module electric pressure and the increase of power density, the caloric value of inside modules is also more and more higher.Research shows, in normal operating conditions, the working temperature of device often rises 10 DEG C, and its failure rate increases by 1 times.Therefore for large power semiconductor device, even if structure temperature declines 1 DEG C, the effect reducing failure rate can also be played to a certain extent.
IGBT module needs constantly to turn on and off in the course of the work, can produce a large amount of heat in the process; The cyclic stress simultaneously produced because thermal coefficient of expansion between the various material of inside modules does not mate, more easily makes module generation thermal fatigue and causes inefficacy.
The substrate tow sides of ordinary construction are all planes, and during Knockdown block, the stress on surface reaches maximum at installing hole place, whole base sheet stresses skewness, and the ceramic substrate be welded on base plate is easy to stress impact and damages, and causes IGBT module to lose efficacy.Although traditional copper soleplate heat conductivility is good, its coefficient of expansion does not mate with ceramic substrate and semiconductor chip, have impact on the reliability of assembly device.
Utility model content
The utility model provides a kind of curved surface aluminium silicon carbide substrate and has the IGBT module of this substrate, with to solve in prior art IGBT module substrate in an assembling process stress skewness in substrate cause the technical problem of module unstability.
According to an aspect of the present utility model, provide a kind of curved surface aluminium silicon carbide substrate, substrate is aluminium silicon carbide substrate, and substrate comprises: first surface and second, and first surface and second are two opposite faces; First surface is dispersive stress face, and second is fitting surface; The longitudinal cross-section of first surface is camber line, and the central area of first surface outwardly; Substrate periphery is provided with multiple installation U-shaped draw-in groove.
Further, the longitudinal cross-section of first surface is circular arc.
Further, the aluminium silicon carbide that aluminium silicon carbide substrate is 45 ~ 75% by volume fraction is made.
Further, the aluminium silicon carbide that aluminium silicon carbide substrate is 65% by volume fraction is made.
Further, first surface at least exists the diagonal that two are divided equally first surface, first surface is curved surface, and the height of curved surface diagonally reduces to periphery from center.
Further, diagonal comprises the first diagonal and the second diagonal, and the height of first surface is respectively along the first diagonal and the second diagonal, and the periphery from center to first surface evenly reduces.
Further, the difference in height of center and first surface periphery is 0.2 ~ 0.5mm.
Further, substrate plate thickness is 3 ~ 5.5mm; First surface is radiating surface, and first surface arranges radiating component.
Further, substrate is shaping for oozing method one-step casting by synchronous pressure.
Additionally provide more than one according to another aspect of the present utility model and state the IGBT module that substrate is base plate.
The utility model has following beneficial effect:
One side in two opposite faces that the substrate area that the utility model provides is larger is the curved surface that cross section has radian, makes stress distribution suffered by the substrate after assembling even.Simultaneously curved surface can also reduce the deflection of center near zone on substrate, thus the physical surface that the IGBT module making to adopt this substrate mounting to obtain is more stable, global reliability is strengthened.
Except object described above, feature and advantage, the utility model also has other object, feature and advantage.Below with reference to figure, the utility model is described in further detail.
Accompanying drawing explanation
The accompanying drawing forming a application's part is used to provide further understanding of the present utility model, and schematic description and description of the present utility model, for explaining the utility model, is not formed improper restriction of the present utility model.In the accompanying drawings:
Fig. 1 is the schematic side view of the utility model preferable substrate embodiment;
Fig. 2 is the schematic top plan view of the utility model preferable substrate embodiment; And
Fig. 3 is the schematic perspective view of the utility model preferable substrate embodiment.
Marginal data:
1, first surface; 2, second; 3, center; 4, the first diagonal; 5, the second diagonal; 6, U-shaped draw-in groove.
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model is described in detail, but the multitude of different ways that the utility model can be defined by the claims and cover is implemented.
If do not specialize, the conventional means that technological means used in embodiment is well known to those skilled in the art.
The substrate that the utility model provides is preferred in IGBT module.See Fig. 1 and 2, substrate comprises first surface 1 and the second face 2, and first surface 1 and the second face 2 are two opposite faces.First surface 1 and the second face 2 are two opposite faces maximum in outer surface of substrate.First surface 1 can play the effect of heat radiation and dispersion mount stress.Second face 2 is fitting surface.Second face 2 is for welding electrical and electronic component.Centered by the central point of first surface 13.When substrate is rectangle, center 3 is the cornerwise intersection point of rectangle.When substrate is circular, center 3 is the center of circle.The longitudinal cross-section of first surface 1 is arc.Curved surface can be the multiple face with certain radian such as sphere or cambered surface.First surface 1 peaks at center 3 place.The periphery of first surface 1 is minimum.
In another embodiment, first surface 1 at least exists the diagonal that two are divided equally first surface 1.First surface 1 is curved surface, and the height of curved surface diagonally reduces to periphery from center 3.The first surface 1 formed by this can effectively diagonally be uniformly distributed in installing the stress produced on whole first surface 1, and prevents stress from concentrating and causes substrate to rupture.
In another embodiment, see Fig. 2, two crossing diagonal comprise the first diagonal 4 and the second diagonal 5.The height of first surface 1 is respectively along the first diagonal 4 and the second diagonal 5, and the periphery from center 3 to first surface 1 evenly reduces.First diagonal 4 and the second diagonal 5 are not concrete line, but have according to first surface 1 shape itself.Center 3 place of first surface 1 is peak.The height of periphery is arrived at the center 3 of first surface 1, and diagonally evenly reduce to periphery, Formation cross-section is the curved surface of camber line.Now substrate is rectangle, and rectangular substrate is easy to process, and cost is low, is suitable for the encapsulation of Most electronic components and parts.
In another embodiment, center 3 is 0.2 ~ 0.5mm with the difference in height of substrate first surface 1 lowest part.Now first surface 1 formed curved surface can see that the stress produced in assembling process is uniformly dispersed completely in substrate, stress concentrate be down to minimum.
In another embodiment, the cross section curved surface of first surface 1 is preferably sphere, and the deflection now in substrate center 3 region reaches minimum.Assemble the IGBT module fail safe obtained and reach the highest.
In another embodiment, see Fig. 2 and 3, it is U-shaped draw-in groove 6 that substrate surface arranges installing hole.There is certain installation surplus in U-shaped draw-in groove 6, when installation misplaces a little, still can ensure the reliability of the IGBT module after installing.And easy to process, can reduce in the course of processing because the useless plate rate caused is out of shape in punching.Gained molding substrate processing cost, profile and installing hole processing cost are low.Process a substrate and can reduce costs 15 yuan.
In another embodiment, substrate to be volume fraction be 45 ~ 75% aluminium silicon carbide material make.The aluminium silicon carbide material thermal expansion coefficient of this volume fraction is (6 ~ 10) × 10
-6/ K, only has the half of copper or lower, mates well with semiconductor chip and ceramic substrate, and power electronic device can experience the times of thermal cycle that decuples copper soleplate and not lose efficacy, and reliability is very high.The aluminium silicon carbide material that volume fraction is different only refers to different aluminium silicon carbide materials, and the aluminium silicon carbide material of different volumes mark commercially directly can buy finished product.It is not the improvement that this material is carried out.
Substrate thickness above in each embodiment is 3 ~ 5.5mm.Now the cost of substrate and fail safe balance reach optimum.
In each embodiment, first surface 1 can also play the effect of heat radiation above, for increasing thermolysis, reducing the use to cooling electronic component equipment, can arrange multiple radiating component, as needle-like radiator etc. on first surface 1.
In above embodiment, substrate oozes method casting one-shot forming by synchronous pressure.Adopt near-net-shape when to produce this substrate in the past, for ensureing the uniformity of curved surface effect and aluminium-coating surface, it is long that substrate is processed into curved surface required time, is unfavorable for enhancing productivity.Adopt synchronous pressure to ooze method casting and substrate is divided into three layers, silicon carbide layer is located at centre, two opposite faces are aluminium lamination, under vacuum the three stacked carborundum put are positioned in the mould of curved surface, make aluminium infiltrate in middle silicon carbide layer by pressurization, while obtained aluminium silicon carbide, obtain the aluminium silicon carbide substrate with curved surface.Shorten process time, also help and form good feeding layer on the two sides of substrate, reduce the problem of the bad generation shrinkage cavity of infiltration.
It is base plate that the utility model additionally provides more than one substrates stated in any embodiment on the other hand, on the substrate after bank conventional method coated ceramic coating, then the IGBT module obtained after installing electronic devices and components according to a conventional method.The times of thermal cycle that the experiencing of this module decuples copper soleplate and not losing efficacy, reliability is very high.
These are only preferred embodiment of the present utility model, be not limited to the utility model, for a person skilled in the art, the utility model can have various modifications and variations.All within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection range of the present utility model.
Claims (10)
1. a curved surface aluminium silicon carbide substrate, described substrate is aluminium silicon carbide substrate, it is characterized in that,
Described substrate comprises: first surface and second, and described first surface and described second are two opposite faces;
Described first surface is dispersive stress face, and described second is fitting surface;
The longitudinal cross-section of described first surface is camber line, and the central area of described first surface outwardly;
Described substrate periphery is provided with multiple installation U-shaped draw-in groove.
2. substrate according to claim 1, is characterized in that, the longitudinal cross-section of described first surface is circular arc.
3. substrate according to claim 1, is characterized in that, the aluminium silicon carbide that described aluminium silicon carbide substrate is 45 ~ 75% by volume fraction is made.
4. substrate according to claim 3, is characterized in that, the aluminium silicon carbide that described aluminium silicon carbide substrate is 65% by volume fraction is made.
5. substrate according to claim 1, is characterized in that, described first surface at least exists the diagonal that two are divided equally described first surface, and described first surface is curved surface, and the height of described curved surface reduces to periphery from center along described diagonal.
6. substrate according to claim 5, it is characterized in that, described diagonal comprises the first diagonal and the second diagonal, and the height of described first surface is respectively along described first diagonal and described second diagonal, and the periphery from described center to described first surface evenly reduces.
7. substrate according to claim 6, is characterized in that, the difference in height of described center and described first surface periphery is 0.2 ~ 0.5mm.
8. the substrate according to any one of claim 1 ~ 7, is characterized in that, described substrate plate thickness is 3 ~ 5.5mm; Described first surface is radiating surface, and described first surface arranges radiating component.
9. substrate according to claim 8, is characterized in that, described substrate is shaping for oozing method one-step casting by synchronous pressure.
10. the IGBT module that is base plate with substrate according to any one of claim 1 ~ 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520002405.9U CN204303816U (en) | 2015-01-05 | 2015-01-05 | Curved surface aluminium silicon carbide substrate and there is the IGBT module of this substrate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520002405.9U CN204303816U (en) | 2015-01-05 | 2015-01-05 | Curved surface aluminium silicon carbide substrate and there is the IGBT module of this substrate |
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| CN204303816U true CN204303816U (en) | 2015-04-29 |
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| CN201520002405.9U Active CN204303816U (en) | 2015-01-05 | 2015-01-05 | Curved surface aluminium silicon carbide substrate and there is the IGBT module of this substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106486430A (en) * | 2015-08-28 | 2017-03-08 | 比亚迪股份有限公司 | IGBT radiating bottom plate and its manufacture method |
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2015
- 2015-01-05 CN CN201520002405.9U patent/CN204303816U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106486430A (en) * | 2015-08-28 | 2017-03-08 | 比亚迪股份有限公司 | IGBT radiating bottom plate and its manufacture method |
| CN106486430B (en) * | 2015-08-28 | 2019-01-11 | 比亚迪股份有限公司 | IGBT radiating bottom plate and its manufacturing method |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP02 | Change in the address of a patent holder |
Address after: 410200 Wangcheng economic and Technological Development Zone, Changsha, Tongxin Road, No. 1, Hunan Patentee after: Hunan Harvest Technology Development Co., Ltd. Address before: 410119 Hunan province Changsha Zhongyi road two Muyun Industrial Park Patentee before: Hunan Harvest Technology Development Co., Ltd. |