CN105552038A - High-power crimping IGBT device - Google Patents
High-power crimping IGBT device Download PDFInfo
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- CN105552038A CN105552038A CN201510960406.9A CN201510960406A CN105552038A CN 105552038 A CN105552038 A CN 105552038A CN 201510960406 A CN201510960406 A CN 201510960406A CN 105552038 A CN105552038 A CN 105552038A
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- 238000002788 crimping Methods 0.000 title abstract 4
- 229910000976 Electrical steel Inorganic materials 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 230000006835 compression Effects 0.000 claims description 29
- 238000007906 compression Methods 0.000 claims description 29
- 238000009413 insulation Methods 0.000 claims description 21
- 239000011810 insulating material Substances 0.000 claims description 6
- 230000006872 improvement Effects 0.000 claims description 4
- 230000001052 transient effect Effects 0.000 abstract description 2
- 241000276425 Xiphophorus maculatus Species 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000003756 stirring Methods 0.000 description 3
- 239000004342 Benzoyl peroxide Substances 0.000 description 2
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 235000019400 benzoyl peroxide Nutrition 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000013499 data model Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Silicon Compounds (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention provides a high-power crimping type IGBT device. The high-power crimping type IGBT device comprises a tube shell, and platy metal electrodes coaxially arranged at the upper and lower ends of the tube shell, wherein lug bosses are mounted on the inner side face of the metal electrode at the lower end; power sub modules are crimped between the lug bosses and the metal electrode at the upper end; crossed silicon steel sheet groups for dividing the inner side face of the metal electrode at the lower end into four regions are perpendicularly mounted on the inner side face of the metal electrode at the lower end; the lug bosses are distributed in the four regions; and an insulating frame is arranged on the exteriors of the silicon steel sheet groups. According to the technical scheme of the high-power crimping type IGBT device provided by the invention, the multiple lug bosses are divided, so that mutual influences caused by magnetic fields generated when the transient state current passes through the lug bosses are lowered; and therefore, the minimum stray inductance among the lug bosses in a local region is realized, and the usage performance of the device is improved.
Description
Technical field
The present invention relates to a kind of compression joint type IGBT device, be specifically related to a kind of can the high-power compression joint type IGBT device of CURRENT DISTRIBUTION between boss in balanced IGBT device On-off transition.
Background technology
Since u-stack structure in 1993 proposes, compression joint type IGBT device obtains and develops widely.Two main products are in the market respectively the PressPackIGBT of StakPak and the Westcode company of ABB AB.The advantage that compression joint type IGBT has that power is large, inefficacy short circuit and being more easy to is connected, is very suitable for the application of VSC-HVDC.Compression joint type IGBT module is compared with traditional welded type IGBT module, and the stray inductance of device is little, and loop parameter is relatively more consistent, and especially emitter inductance obtains great reduction.
The StakPak of ABB AB by using the mode of disc spring to be pressed on base plate by chip at collector electrode, thus reduces the stray inductance of emitter side, thus reduces the stray inductance of drive circuit, chip is had and better opens consistency.The existing compression joint type IGBT device of Westcode company, by being crimped on boss by chip, and uses the mode of thimble to carry out grid triggering.The advantage of the PressPackIGBT of Westcode is that structure and technique are relatively simple.
In the compression joint type IGBT device of Westcode, boss is in the emitter side of chip, and auxiliary emitter electrode is drawn by bottom copper coin, because boss has certain height, there is self-induction in boss, there is mutual inductance between boss, thus have impact on the stray inductance that device turns on and off loop, each chip place in process, thus impact is brought on turning on and off of device.
There are some researches show, along with the increase of boss quantity, due to the inconsistence problems of this stray inductance, there is the problem of not current-sharing in the electric current between boss turning on and off in process, therefore constrain the development of device toward high-power direction.、
Summary of the invention
In order to solve above-mentioned deficiency existing in prior art, the invention provides a kind of high-power compression joint type IGBT device of new structure.
Technical scheme provided by the invention is: a kind of high-power compression joint type IGBT device, comprise shell and be coaxially arranged on the plate-shape metal electrode at the upper and lower two ends of described shell, the medial surface of lower end metal electrode is provided with boss, be crimped with power modules between described boss and upper end metal electrode, its improvements are: the medial surface of described lower end metal electrode is vertically installed with the cross silicon steel sheet group medial surface of described lower end metal electrode being separated into four regions; Described boss is distributed in described four regions; Described cross silicon steel sheet group outside is Insulating frame.
Preferably, described Insulating frame is the cross Insulating frame that structure and described silicon steel sheet group adapt, and the length of described Insulating frame equals the diameter of lower end metal electrode, and it highly equals the distance between the metal electrode of upper and lower two ends.
Preferably, described Insulating frame leaves groove by inside and the contrary cross-shaped top Insulating frame in slot opening direction and bottom insulation framework fasten and form; Length, the width of described top Insulating frame and described bottom insulation framework are all consistent with height parameter; The groove size of described top Insulating frame and described bottom insulation framework is in the same size, described groove size size and described silicon steel sheet group match, and be arranged on fastened in the cavity that formed by top Insulating frame and bottom insulation framework to make described silicon steel sheet group.
Further, the top of described top Insulating frame and sidepiece corner angle are rounded corners, and the sidepiece corner angle of described bottom insulation framework are rounded corners, and bottom it, corner angle are without chamfering.
Preferably, described silicon steel sheet group is made up of some pieces of stacked compressions of silicon steel sheet insulated from each other, and the integral thickness of described silicon steel sheet group is 0.5-2mm.
Preferably, the distance between two boss of the large therebetween naked framework of the distance between two boss described lower end metal electrode having Insulating frame therebetween, and the difference of distance is the width of described Insulating frame.
Preferably, described lower end metal electrode there is the distance between the power modules on two of Insulating frame boss equal the width of described Insulating frame therebetween.
Further, the medial surface of lower end metal electrode is distributed with groove, each groove internal fixtion has a boss;
The both sides of described boss are provided with the pillar be parallel on shell axis direction, and the both sides of described groove are provided with the groove adapted with described pillar; Described pillar is contained in described groove, to be limited in described groove by described boss.
Further, the face that described boss contacts with described bottom portion of groove is the concave surface upwards caved in; Described concave surface is curved surface or inclined-plane;
Described groove is rectangle, and the width of described groove equals the corresponding length of side of boss, to be limited in described groove by described boss; The length of described groove is slightly larger than the corresponding bottom lengths of boss; The cross section of described concave surface is arch; The cross section line of symmetry of described concave surface is perpendicular to the length of described groove.
Further, described Insulating frame high thermal conductivity insulating material makes.
Compared with immediate prior art, the present invention has following marked improvement:
1) high-power compression joint type IGBT device provided by the invention is vertically installed with the cross silicon steel sheet group medial surface of lower end metal electrode being separated into four regions on the medial surface of lower end metal electrode, silicon steel sheet group can reduce both sides boss by during electric current produce influencing each other of magnetic field, improve the consistency of main loop of power circuit stray inductance and the consistency of power modules raster data model loop stray inductance.
2) corner angle for installing the Insulating frame of silicon steel sheet group adopt rounded corners, can improve the insulation characterisitic of Insulating frame, improve the overall performance of device.
3) Insulating frame for installing silicon steel sheet group adopts high thermal conductivity insulating material to make, and can ensure that the heat that silicon steel sheet produces is delivered to outside by Insulating frame, improve the overall performance of device.
4) boss of compression joint type IGBT module is arranged in the groove of lower end metal electrode medial surface, and boss bottom is provided with the concave surface upwards caved in, and improves the consistency of each chip cooling in power modules, improves the serviceability of compression joint type IGBT device.
Accompanying drawing explanation
Fig. 1 is the relative position schematic diagram between middle frame of the present invention and boss;
Fig. 2 is the silicon steel sheet and frame shape schematic diagram that use in the present invention;
Fig. 3 is that in the present invention, silicon steel sheet is placed on the CONSTRUCTED SPECIFICATION schematic diagram in framework;
Fig. 4 is the structural representation of boss in the present invention;
Vertical section structure schematic diagram when Fig. 5 is boss in the present invention, groove is installed together;
Wherein: 1, top Insulating frame; 2, silicon steel sheet group; 3, bottom insulation framework; 4, the dividing plate that forms of silicon steel sheet group and framework; 5, boss; 6, lower end metal electrode; 7, breach; 8, bar shaped pillar.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
In order to thoroughly understand the embodiment of the present invention, by following description, detailed structure is proposed.Obviously, the execution of the embodiment of the present invention is not limited to the specific details that those skilled in the art has the knack of.Preferred embodiment of the present invention is described in detail as follows, but except these are described in detail, the present invention can also have other execution modes.
The outside of high-power compression joint type IGBT module provided by the invention is made up of shell and two the plate-shape metal electrodes being arranged on shell upper/lower terminal, and inside is power modules and corresponding boss 5.
As shown in Figure 1, of the present inventionly to focus on: in order to reduce boss 5 when by transient current, produce influencing each other of magnetic field, realize minimizing of stray inductance between boss 5, compression joint type IGBT module provided by the invention has installed criss-cross silicon steel sheet group 2 on the medial surface of lower end metal electrode 6; For a large amount of boss 5 on lower surface are carried out Region Segmentation.
Boss 5 in Fig. 1 eliminates the bar shaped pillar 8 of its both sides, sidepiece diagonal place's leaving certain gaps uncovered by the economic plan 7 of boss 5, this breach 7 is concordant with the medial surface of lower end metal polar plate, for installing pcb board, the upper surface of pcb board applies copper, and above boss 5, the grid of power modules is electrically connected by the upper surface of thimble and pcb board.
As shown in Figure 2, described criss-cross silicon steel sheet group 2 is arranged on Insulating frame; Described Insulating frame is the cross Insulating frame that structure and described silicon steel sheet group 2 adapt, the length of described Insulating frame approximates the diameter of lower end metal electrode 6, it highly equals the distance between the metal electrode of upper and lower two ends, thus described Insulating frame can be fixed between the metal electrode of upper and lower two ends.
Described Insulating frame has certain thickness, and has good insulation characterisitic, thus ensures silicon steel sheet group 2 and the electric insulation up and down between metal electrode.
As shown in Figure 3, described Insulating frame leaves groove by inside and the contrary cross-shaped top Insulating frame 1 in slot opening direction and bottom insulation framework 3 fasten and form; The height sum of described top Insulating frame 1 and described bottom insulation framework 3 is the distance between the metal electrode of compression joint type IGBT device upper and lower two ends.Length, the width of described top Insulating frame 1 and described bottom insulation framework 3 are all consistent with height parameter; The groove size of described top Insulating frame 1 and described bottom insulation framework 3 is in the same size, described groove size size and described silicon steel sheet group 2 adapt, and be arranged on fastened in formed cavity by top Insulating frame 1 and bottom insulation framework 3 to make described silicon steel sheet group 2.
The top of described top Insulating frame 1 and sidepiece corner angle are rounded corners, and the sidepiece corner angle of described bottom insulation framework 3 are rounded corners, and can be used for the characteristic improving Insulating frame, bottom it, corner angle are without chamfering.
Described silicon steel sheet group 2 is made up of some pieces of stacked compressions of silicon steel sheet insulated from each other, and the integral thickness of described silicon steel sheet group 2 is 0.5-2mm.
Placing the place of Insulating frame, the distance between boss 5 is relatively large, and the difference of the distance between two boss 5 of the distance between two boss 5 having Insulating frame therebetween and therebetween naked framework is the width of Insulating frame.
The distance between the power modules on two of Insulating frame boss 5 is had to equal the width of described Insulating frame therebetween.
As illustrated in figures 4-5, the medial surface of lower end metal electrode 6 is distributed with groove, each groove internal fixtion has a boss 5; The face that described boss 5 contacts with described bottom portion of groove is the concave surface upwards caved in; Described concave surface is curved surface or inclined-plane;
Described groove is the rectangular recess with certain depth, the length of side that the width of described groove is corresponding with boss 5 is identical, thus plays the effect of fixing lug boss 5, but length is slightly longer than boss 5 bottom lengths, be convenient to boss 5 when pressing down deformation, boss 5 bottom margin has certain displacement space; The cross section line of symmetry of described concave surface is perpendicular to the length of described groove.
The both sides of described boss 5 are provided with the bar shaped pillar 8 be parallel on shell axis direction, and the both sides of described groove are provided with the groove adapted with described bar shaped pillar 8; Described bar shaped pillar 8 is contained in described groove, to be limited in described groove by described boss 5.
Insulating frame outside silicon steel sheet group 2 high thermal conductivity insulating material makes, its insulation characterisitic meets silicon steel sheet group 2 and the insulating requirements up and down between metal electrode, Insulating frame must have good heat conductivility in addition, thus can in time by the thermal diffusion in silicon steel sheet to outside.
In order to improve the heat conductivility of Insulating frame, Insulating frame adopts the component of following weight portion to make: silicon rubber 60 ~ 80, polyimides 20 ~ 40, benzoyl peroxide 3 ~ 5, acetylene carbon black 30 ~ 50, AlN20 ~ 30, glass fibre 5 ~ 8, silane coupler 5 ~ 10.
The preparation method of high thermal conductivity insulating material comprises the following steps:
(1) surface treatment of AlN: AlN is put into electric mixer, by formula, silane coupler is added under the rotating speed of 200 revs/min, after dropwising, rotating speed is adjusted to 2000 revs/min, at the temperature of 110 DEG C, stir 30min, obtain the AlN of surface modification;
(2) batch mixing: by the first AlN adding the middle surface modification of polyimides, acetylene carbon black, glass fibre and step (1) in banbury of formula, stir 15min extremely evenly, then add silicon rubber, discharging after continuation stirring 15min;
(3) compound obtained in step (2) is placed in two roller mill, after bag roller, adds benzoyl peroxide, mixing 3 ~ 5min, bottom sheet room temperature parks 24h;
(4) by the film that obtains in step (3) on vulcanizing press with 140 DEG C, the condition sulfidization molding of 15MPa, 30min.
The thermal conductivity of the insulating material utilizing said method to prepare can reach more than 2.70w/ (mK).
Finally should be noted that: above embodiment is only in order to illustrate that technical scheme of the present invention is not intended to limit; although with reference to above-described embodiment to invention has been detailed description; those of ordinary skill in the field still can modify to the specific embodiment of the present invention or equivalent replacement; these do not depart from any amendment of spirit and scope of the invention or equivalent replacement, are all applying within the claims awaited the reply.
Claims (10)
1. a high-power compression joint type IGBT device, comprise shell and be coaxially arranged on the plate-shape metal electrode at the upper and lower two ends of described shell, the medial surface of lower end metal electrode is provided with boss, be crimped with power modules between described boss and upper end metal electrode, it is characterized in that: the medial surface of described lower end metal electrode is vertically installed with the cross silicon steel sheet group medial surface of described lower end metal electrode being separated into four regions; Described boss is distributed in described four regions; Described cross silicon steel sheet group outside is Insulating frame.
2. the high-power compression joint type IGBT device of one according to claim 1, it is characterized in that: described Insulating frame is the cross Insulating frame that structure and described silicon steel sheet group adapt, the length of described Insulating frame equals the diameter of lower end metal electrode, and it highly equals the distance between the metal electrode of upper and lower two ends.
3. the high-power compression joint type IGBT device of one according to claim 1, is characterized in that: described Insulating frame leaves groove by inside and the contrary cross-shaped top Insulating frame in slot opening direction and bottom insulation framework fasten and form; Length, the width of described top Insulating frame and described bottom insulation framework are all consistent with height parameter; The groove size of described top Insulating frame and described bottom insulation framework is in the same size, described groove size size and described silicon steel sheet group match, and be arranged on fastened in the cavity that formed by top Insulating frame and bottom insulation framework to make described silicon steel sheet group.
4. the high-power compression joint type IGBT device of one according to claim 3, is characterized in that:
The top of described top Insulating frame and sidepiece corner angle are rounded corners, and the sidepiece corner angle of described bottom insulation framework are rounded corners, and bottom it, corner angle are without chamfering.
5. the high-power compression joint type IGBT device of one according to claim 1, is characterized in that:
Described silicon steel sheet group is made up of some pieces of stacked compressions of silicon steel sheet insulated from each other, and the integral thickness of described silicon steel sheet group is 0.5-2mm.
6. the high-power compression joint type IGBT device of one according to claim 1, is characterized in that:
Distance between two boss of the large therebetween naked framework of the distance between two boss described lower end metal electrode having Insulating frame therebetween, and the difference of distance is the width of described Insulating frame.
7. the high-power compression joint type IGBT device of one according to claim 1, is characterized in that:
Described lower end metal electrode there is the distance between the power modules on two of Insulating frame boss equal the width of described Insulating frame therebetween.
8., according to the compression joint type IGBT device of a kind of improvement in claim 1-7 described in any one, it is characterized in that:
The medial surface of lower end metal electrode is distributed with groove, and each groove internal fixtion has a boss;
The both sides of described boss are provided with the pillar be parallel on shell axis direction, and the both sides of described groove are provided with the groove adapted with described pillar; Described pillar is contained in described groove, to be limited in described groove by described boss.
9. the compression joint type IGBT device of a kind of improvement according to claim 8, is characterized in that:
The face that described boss contacts with described bottom portion of groove is the concave surface upwards caved in; Described concave surface is curved surface or inclined-plane;
Described groove is rectangle, and the width of described groove equals the corresponding length of side of boss, to be limited in described groove by described boss; The length of described groove is slightly larger than the corresponding bottom lengths of boss; The cross section of described concave surface is arch; The cross section line of symmetry of described concave surface is perpendicular to the length of described groove.
10., according to the high-power compression joint type IGBT device of the one in claim 1-7 described in any one, it is characterized in that:
Described Insulating frame high thermal conductivity insulating material makes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510960406.9A CN105552038B (en) | 2015-12-18 | 2015-12-18 | High-power crimping type IGBT device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510960406.9A CN105552038B (en) | 2015-12-18 | 2015-12-18 | High-power crimping type IGBT device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105552038A true CN105552038A (en) | 2016-05-04 |
| CN105552038B CN105552038B (en) | 2020-02-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510960406.9A Active CN105552038B (en) | 2015-12-18 | 2015-12-18 | High-power crimping type IGBT device |
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| Country | Link |
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| CN (1) | CN105552038B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109856441A (en) * | 2019-04-15 | 2019-06-07 | 华北电力大学 | Crimp type IGBT device chip current on-line measurement system |
| CN110676233A (en) * | 2019-09-10 | 2020-01-10 | 深圳第三代半导体研究院 | Crimping type power switch module and preparation method thereof |
| CN112652612A (en) * | 2019-10-12 | 2021-04-13 | 深圳第三代半导体研究院 | Stacked crimping type power module and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6678163B1 (en) * | 2002-12-19 | 2004-01-13 | Westcode Semiconductors Limited | Housing for semiconductor chips |
| CN103165563A (en) * | 2011-12-16 | 2013-06-19 | 矽品精密工业股份有限公司 | Semiconductor package and fabrication method thereof |
| CN203481226U (en) * | 2013-10-14 | 2014-03-12 | 国家电网公司 | Large power crimping type IGBT device |
| CN104020601A (en) * | 2014-05-29 | 2014-09-03 | 深圳市华星光电技术有限公司 | Color film substrate and display device |
| US20150102383A1 (en) * | 2013-10-15 | 2015-04-16 | Ixys Corporation | Power device cassette with auxiliary emitter contact |
-
2015
- 2015-12-18 CN CN201510960406.9A patent/CN105552038B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6678163B1 (en) * | 2002-12-19 | 2004-01-13 | Westcode Semiconductors Limited | Housing for semiconductor chips |
| CN103165563A (en) * | 2011-12-16 | 2013-06-19 | 矽品精密工业股份有限公司 | Semiconductor package and fabrication method thereof |
| CN203481226U (en) * | 2013-10-14 | 2014-03-12 | 国家电网公司 | Large power crimping type IGBT device |
| US20150102383A1 (en) * | 2013-10-15 | 2015-04-16 | Ixys Corporation | Power device cassette with auxiliary emitter contact |
| CN104020601A (en) * | 2014-05-29 | 2014-09-03 | 深圳市华星光电技术有限公司 | Color film substrate and display device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109856441A (en) * | 2019-04-15 | 2019-06-07 | 华北电力大学 | Crimp type IGBT device chip current on-line measurement system |
| CN109856441B (en) * | 2019-04-15 | 2024-05-10 | 华北电力大学 | Crimping type IGBT device chip current online measurement system |
| CN110676233A (en) * | 2019-09-10 | 2020-01-10 | 深圳第三代半导体研究院 | Crimping type power switch module and preparation method thereof |
| CN112652612A (en) * | 2019-10-12 | 2021-04-13 | 深圳第三代半导体研究院 | Stacked crimping type power module and manufacturing method thereof |
| CN112652612B (en) * | 2019-10-12 | 2022-07-05 | 深圳第三代半导体研究院 | Stacked crimping type power module and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105552038B (en) | 2020-02-21 |
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