CN105552038B - High-power crimping type IGBT device - Google Patents
High-power crimping type IGBT device Download PDFInfo
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- CN105552038B CN105552038B CN201510960406.9A CN201510960406A CN105552038B CN 105552038 B CN105552038 B CN 105552038B CN 201510960406 A CN201510960406 A CN 201510960406A CN 105552038 B CN105552038 B CN 105552038B
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- 238000002788 crimping Methods 0.000 title claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 229910000976 Electrical steel Inorganic materials 0.000 claims abstract description 39
- 239000011810 insulating material Substances 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 3
- 230000001052 transient effect Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 239000004342 Benzoyl peroxide Substances 0.000 description 2
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- 239000006230 acetylene black Substances 0.000 description 2
- 235000019400 benzoyl peroxide Nutrition 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000005493 welding type Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
Abstract
The invention provides a high-power crimping type IGBT device, which comprises a tube shell and plate-shaped metal electrodes coaxially arranged at the upper end and the lower end of the tube shell, wherein a boss is arranged on the inner side surface of the lower-end metal electrode, a power sub-module is crimped between the boss and the upper-end metal electrode, and a cross-shaped silicon steel sheet group for dividing the inner side surface of the lower-end metal electrode into four regions is vertically arranged on the inner side surface of the lower-end metal electrode; the bosses are distributed in the four areas; and the outer part of the cross-shaped silicon steel sheet group is provided with an insulating frame. The technical scheme provided by the invention divides a large number of bosses, reduces the mutual influence of magnetic fields generated when the bosses pass transient current, thereby realizing the minimization of stray inductance between the bosses in a local area and improving the service performance of devices.
Description
Technical Field
The invention relates to a crimping type IGBT device, in particular to a high-power crimping type IGBT device capable of balancing current distribution among bosses in the switching transient process of the IGBT device.
Background
The crimping type IGBT device has been widely developed since the u-stack structure was proposed in 1993. Two mainstream products on the market are StakPak by ABB and Press Pack IGBT by Westcode, respectively. The crimping type IGBT has the advantages of high power, failure short circuit and easiness in series connection, and is very suitable for VSC-HVDC application. Compared with the traditional welding type IGBT module, the crimping type IGBT module has the advantages that stray inductance of devices is small, loop parameters are consistent, and particularly emitter inductance is greatly reduced.
StakPak of ABB presses the chip on the bottom plate by using a disc spring at the collector, thereby reducing the stray inductance on the emitter side, and reducing the stray inductance of the driving loop, so that the chip has better opening consistency. The existing compression joint type IGBT device of Westcode company carries out grid triggering by pressing a chip on a boss and using an ejector pin. The advantage of the Westcode's Press Pack IGBT is that the structure and process are relatively simple.
In the Westcode crimping type IGBT device, a boss is arranged on the emitter side of a chip, an auxiliary emitter is led out through a bottom copper plate, the boss has a certain height, self inductance exists in the boss, mutual inductance exists between the bosses, accordingly stray inductance of a loop where each chip is located in the process of switching on and switching off of the device is influenced, and the influence is brought to the switching on and switching off of the device.
Research has shown that as the number of the bosses increases, the current between the bosses has the problem of non-uniform current in the turn-on and turn-off processes due to the problem of the inconsistency of the stray inductance, thereby restricting the development of devices in the direction of high power. A
Disclosure of Invention
In order to solve the defects in the prior art, the invention provides a high-power crimping type IGBT device with a novel structure.
The technical scheme provided by the invention is as follows: the utility model provides a high-power crimping formula IGBT device, includes the tube and coaxial arrangement the plate-like metal electrode at both ends about the tube, installs the boss on the medial surface of lower extreme metal electrode, the crimping has power submodule piece between boss and the upper end metal electrode, its improvement characterized in that: the inner side surface of the lower end metal electrode is vertically provided with a cross-shaped silicon steel sheet group which divides the inner side surface of the lower end metal electrode into four areas; the bosses are distributed in the four areas; and the outer part of the cross-shaped silicon steel sheet group is provided with an insulating frame.
Preferably, the insulating frame is a cross-shaped insulating frame with a structure matched with the silicon steel sheet group, the length of the insulating frame is equal to the diameter of the lower end metal electrode, and the height of the insulating frame is equal to the distance between the upper end metal electrode and the lower end metal electrode.
Preferably, the insulating frame is formed by buckling a cross-shaped top insulating frame and a cross-shaped bottom insulating frame, wherein a groove is reserved in the insulating frame, and the opening directions of the grooves are opposite; the length, width and height parameters of the top insulating frame and the bottom insulating frame are consistent; the size of the groove of the top insulating frame is consistent with that of the groove of the bottom insulating frame, and the size of the groove is matched with that of the silicon steel sheet group, so that the silicon steel sheet group is arranged in a cavity formed by buckling the top insulating frame and the bottom insulating frame.
Furthermore, the top and side edges of the top insulating frame are rounded chamfers, the side edges of the bottom insulating frame are rounded chamfers, and the bottom edges are not chamfered.
Preferably, the silicon steel sheet group is formed by laminating and pressing a plurality of mutually insulated silicon steel sheets, and the overall thickness of the silicon steel sheet group is 0.5-2 mm.
Preferably, the distance between two bosses on the lower metal electrode with the insulating frame therebetween is greater than the distance between two bosses without the insulating frame therebetween, and the difference between the distances is the width of the insulating frame.
Preferably, the distance between the power sub-modules on the two bosses of the lower end metal electrode with the insulating frame therebetween is equal to the width of the insulating frame.
Furthermore, grooves are distributed on the inner side surface of the lower end metal electrode, and a boss is fixed in each groove;
pillars parallel to the axis direction of the pipe shell are arranged on two sides of the boss, and grooves corresponding to the pillars are arranged on two sides of the groove; the post is received in the groove to restrain the boss within the recess.
Furthermore, the surface of the boss, which is in contact with the bottom of the groove, is an upwardly concave surface; the concave surface is a curved surface or an inclined surface;
the groove is rectangular, and the width of the groove is equal to the corresponding side length of the boss so as to limit the boss in the groove; the length of the groove is slightly greater than the length of the corresponding bottom of the boss; the cross section of the concave surface is arched; the cross-sectional symmetry line of the concave surface is perpendicular to the length of the groove.
Further, the insulating frame is made of high-thermal-conductivity insulating materials.
Compared with the closest prior art, the invention has the following remarkable progress:
1) according to the high-power crimping type IGBT device, the cross-shaped silicon steel sheet group which divides the inner side surface of the lower end metal electrode into four regions is vertically arranged on the inner side surface of the lower end metal electrode, the mutual influence of magnetic fields generated by bosses on two sides when current passes through the silicon steel sheet group can be reduced, and the consistency of stray inductance of a main power loop and the consistency of stray inductance of a grid driving loop of a power sub-module are improved.
2) The edges and corners of the insulating frame for mounting the silicon steel sheet group are rounded, so that the insulating property of the insulating frame can be improved, and the overall performance of the device is improved.
3) The insulating frame for mounting the silicon steel sheet group is made of high-thermal-conductivity insulating materials, so that heat generated by the silicon steel sheet can be transmitted to the outside through the insulating frame, and the overall performance of the device is improved.
4) The boss of crimping formula IGBT module is installed in the recess of lower extreme metal electrode medial surface, and the boss bottom is equipped with the concave surface of upwards caving, has improved the radiating uniformity of each chip among the power submodule piece, has improved the performance of crimping formula IGBT device.
Drawings
FIG. 1 is a schematic view of the relative positions of a frame and a boss according to the present invention;
FIG. 2 is a schematic view of the shape of a silicon steel sheet and a frame used in the present invention;
FIG. 3 is a schematic view showing the detail of the structure of the silicon steel sheet placed in the frame according to the present invention;
FIG. 4 is a schematic view of the boss of the present invention;
FIG. 5 is a schematic longitudinal sectional view showing the boss and the groove of the present invention when they are fitted together;
wherein: 1. a top insulating frame; 2. silicon steel sheet group; 3. a bottom insulating frame; 4. the partition plate consists of a silicon steel sheet group and a frame; 5. a boss; 6. a lower end metal electrode; 7. a notch; 8. a strip-shaped column.
Detailed Description
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
In the following description, a detailed structure will be presented for a thorough understanding of embodiments of the invention. It is apparent that the implementation of the embodiments of the present invention is not limited to the specific details familiar to those skilled in the art. The following detailed description of the preferred embodiments of the invention, however, the invention is capable of other embodiments in addition to those detailed.
The high-power crimping type IGBT module provided by the invention is composed of a tube shell and two plate-shaped metal electrodes arranged at the upper end and the lower end of the tube shell, and a power sub-module and a corresponding boss 5 are arranged inside the high-power crimping type IGBT module.
As shown in fig. 1, the present invention focuses on: in order to reduce the mutual influence of magnetic fields generated when the bosses 5 pass transient current and minimize stray inductance between the bosses 5, the crimping type IGBT module provided by the invention is characterized in that a cross-shaped silicon steel sheet group 2 is arranged on the inner side surface of a lower end metal electrode 6; for dividing a large number of bosses 5 on the lower end surface into regions.
The boss 5 in fig. 1 omits strip-shaped columns 8 at two sides of the boss, a gap 7 is reserved at a diagonal of the side part of the boss 5, the gap 7 is flush with the inner side surface of the lower end metal polar plate and used for installing a PCB, copper is coated on the upper surface of the PCB, and a grid electrode of a power sub-module above the boss 5 is electrically connected with the upper surface of the PCB through a thimble.
As shown in fig. 2, the cross-shaped silicon steel sheet group 2 is mounted on an insulating frame; the insulating frame be the structure with the crisscross insulating frame that silicon steel sheet group 2 suited, the length of insulating frame is approximately equal to the diameter of lower extreme metal electrode 6, and its height equals the distance between the upper and lower both ends metal electrode, thereby can with insulating frame fixes between the upper and lower both ends metal electrode.
The insulating frame has a certain thickness and good insulating property, so that the electrical insulation between the silicon steel sheet group 2 and the upper and lower metal electrodes is ensured.
As shown in fig. 3, the insulating frame is formed by buckling a cross-shaped top insulating frame 1 and a cross-shaped bottom insulating frame 3, wherein grooves are reserved in the insulating frame, and the opening directions of the grooves are opposite; the sum of the heights of the top insulating frame 1 and the bottom insulating frame 3 is the distance between the metal electrodes at the upper end and the lower end of the crimping type IGBT device. The length, width and height parameters of the top insulating frame 1 and the bottom insulating frame 3 are consistent; the size of the groove of the top insulating frame 1 and the bottom insulating frame 3 is consistent, and the size of the groove is matched with that of the silicon steel sheet group 2, so that the silicon steel sheet group 2 is installed in a cavity formed by buckling the top insulating frame 1 and the bottom insulating frame 3.
The top and side edges of the top insulating frame 1 are rounded chamfers, the side edges of the bottom insulating frame 3 are rounded chamfers, and the bottom edges are not chamfered.
The silicon steel sheet group 2 is formed by laminating and pressing a plurality of silicon steel sheets which are insulated from each other, and the overall thickness of the silicon steel sheet group 2 is 0.5-2 mm.
Where the insulating frame is placed, the distance between the bosses 5 is relatively large, and the difference between the distance between two bosses 5 with the insulating frame therebetween and the distance between two bosses 5 without the insulating frame therebetween is the width of the insulating frame.
The distance between the power sub-modules on the two bosses 5 with the insulating frame in between is equal to the width of the insulating frame.
As shown in fig. 4-5, grooves are distributed on the inner side surface of the lower end metal electrode 6, and a boss 5 is fixed in each groove; the surface of the boss 5, which is in contact with the bottom of the groove, is an upwardly concave surface; the concave surface is a curved surface or an inclined surface;
the groove is a rectangular groove with a certain depth, the width of the groove is the same as the side length corresponding to the boss 5, so that the effect of fixing the boss 5 is achieved, but the length of the groove is slightly longer than the length of the bottom of the boss 5, and when the boss 5 is pressed down to deform, the edge of the bottom of the boss 5 has a certain displacement space; the cross-sectional symmetry line of the concave surface is perpendicular to the length of the groove.
Strip-shaped pillars 8 parallel to the axis direction of the pipe shell are arranged on two sides of the boss 5, and grooves corresponding to the strip-shaped pillars 8 are arranged on two sides of the groove; the strip-shaped posts 8 are received in the grooves to restrain the bosses 5 in the grooves.
The insulating frame outside the silicon steel sheet group 2 is made of high-thermal-conductivity insulating materials, the insulating property of the insulating frame meets the insulating requirement between the silicon steel sheet group 2 and the upper and lower metal electrodes, and in addition, the insulating frame has good heat-conducting property, so that heat in the silicon steel sheet can be diffused to the outside in time.
In order to improve the heat-conducting property of the insulating frame, the insulating frame is prepared from the following components in parts by weight: 60-80 parts of silicone rubber, 20-40 parts of polyimide, 3-5 parts of benzoyl peroxide, 30-50 parts of acetylene black, 20-30 parts of AlN, 5-8 parts of glass fiber and 5-10 parts of silane coupling agent.
The preparation method of the high-thermal-conductivity insulating material comprises the following steps:
(1) surface treatment of AlN: putting AlN into an electric stirrer, adding a silane coupling agent according to a formula at the rotating speed of 200 r/min, regulating the rotating speed to 2000 r/min after finishing dripping, and stirring for 30min at the temperature of 110 ℃ to obtain surface-modified AlN;
(2) mixing materials: adding polyimide, acetylene black, glass fiber and the surface-modified AlN in the step (1) into an internal mixer according to a formula, stirring for 15min to be uniform, adding silicon rubber, continuously stirring for 15min, and then discharging;
(3) placing the mixture obtained in the step (2) on a double-roller open mill, adding benzoyl peroxide after roller wrapping, mixing for 3-5 min, discharging and standing at room temperature for 24 h;
(4) and (4) vulcanizing and molding the rubber sheet obtained in the step (3) on a flat vulcanizing machine at the temperature of 140 ℃, the pressure of 15MPa and the time of 30 min.
The thermal conductivity of the insulating material prepared by the method can reach more than 2.70 w/(m.K).
Finally, it should be noted that: although the present invention has been described in detail with reference to the above embodiments, those skilled in the art can make modifications and equivalents to the specific embodiments of the invention without departing from the spirit and scope of the invention, which is set forth in the claims appended hereto.
Claims (9)
1. The utility model provides a high-power crimping formula IGBT device, includes tube and coaxial arrangement the plate-like metal electrode at both ends about the tube, install the boss on the medial surface of lower extreme metal electrode, the crimping has power submodule piece, its characterized in that between boss and the upper end metal electrode: the inner side surface of the lower end metal electrode is vertically provided with a cross-shaped silicon steel sheet group which divides the inner side surface of the lower end metal electrode into four areas; the bosses are distributed in the four areas; the outer part of the cross-shaped silicon steel sheet group is provided with an insulating frame;
the insulating frame is formed by buckling a cross-shaped top insulating frame and a cross-shaped bottom insulating frame, wherein a groove is reserved in the insulating frame, and the opening directions of the grooves are opposite; the length, width and height parameters of the top insulating frame and the bottom insulating frame are consistent; the size of the groove of the top insulating frame is consistent with that of the groove of the bottom insulating frame, and the size of the groove is matched with that of the silicon steel sheet group, so that the silicon steel sheet group is arranged in a cavity formed by buckling the top insulating frame and the bottom insulating frame.
2. The high-power crimping type IGBT device according to claim 1, characterized in that: the insulating frame is a cross-shaped insulating frame with a structure matched with the silicon steel sheet group, the length of the insulating frame is equal to the diameter of the lower end metal electrode, and the height of the insulating frame is equal to the distance between the upper end metal electrode and the lower end metal electrode.
3. The high-power crimping type IGBT device according to claim 1, characterized in that:
the top and the side edges of the top insulating frame are round chamfers, the side edges of the bottom insulating frame are round chamfers, and the bottom edges of the bottom insulating frame are not chamfers.
4. The high-power crimping type IGBT device according to claim 1, characterized in that:
the silicon steel sheet group is formed by laminating and pressing a plurality of silicon steel sheets which are insulated from each other, and the overall thickness of the silicon steel sheet group is 0.5-2 mm.
5. The high-power crimping type IGBT device according to claim 1, characterized in that:
the distance between the two bosses with the insulating frame between the two bosses on the lower end metal electrode is larger than the distance between the two bosses without the insulating frame between the two bosses, and the difference of the distances is the width of the insulating frame.
6. The high-power crimping type IGBT device according to claim 1, characterized in that:
the distance between the power sub-modules on the two bosses with the insulating frame between the two bosses on the lower end metal electrode is equal to the width of the insulating frame.
7. A high power crimped IGBT device according to any one of claims 1 to 6, characterized in that:
grooves are distributed on the inner side surface of the lower end metal electrode, and a boss is fixed in each groove;
pillars parallel to the axis direction of the pipe shell are arranged on two sides of the boss, and grooves corresponding to the pillars are arranged on two sides of the groove; the post is received in the groove to restrain the boss within the recess.
8. The high-power crimping type IGBT device according to claim 7, characterized in that:
the surface of the boss, which is in contact with the bottom of the groove, is an upwardly concave surface; the concave surface is a curved surface or an inclined surface;
the groove is rectangular, and the width of the groove is equal to the corresponding side length of the boss so as to limit the boss in the groove; the length of the groove is slightly greater than the length of the corresponding bottom of the boss; the cross section of the concave surface is arched; the cross-sectional symmetry line of the concave surface is perpendicular to the length of the groove.
9. A high power crimped IGBT device according to any one of claims 1 to 6, characterized in that:
the insulating frame is made of high-thermal-conductivity insulating materials.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510960406.9A CN105552038B (en) | 2015-12-18 | 2015-12-18 | High-power crimping type IGBT device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510960406.9A CN105552038B (en) | 2015-12-18 | 2015-12-18 | High-power crimping type IGBT device |
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| CN105552038A CN105552038A (en) | 2016-05-04 |
| CN105552038B true CN105552038B (en) | 2020-02-21 |
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| CN110676233B (en) * | 2019-09-10 | 2021-09-24 | 深圳第三代半导体研究院 | Crimping type power switch module and preparation method thereof |
| CN112652612B (en) * | 2019-10-12 | 2022-07-05 | 深圳第三代半导体研究院 | Stacked crimping type power module and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103165563A (en) * | 2011-12-16 | 2013-06-19 | 矽品精密工业股份有限公司 | Semiconductor package and fabrication method thereof |
| CN203481226U (en) * | 2013-10-14 | 2014-03-12 | 国家电网公司 | Large power crimping type IGBT device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6678163B1 (en) * | 2002-12-19 | 2004-01-13 | Westcode Semiconductors Limited | Housing for semiconductor chips |
| US9177943B2 (en) * | 2013-10-15 | 2015-11-03 | Ixys Corporation | Power device cassette with auxiliary emitter contact |
| CN104020601A (en) * | 2014-05-29 | 2014-09-03 | 深圳市华星光电技术有限公司 | Color film substrate and display device |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103165563A (en) * | 2011-12-16 | 2013-06-19 | 矽品精密工业股份有限公司 | Semiconductor package and fabrication method thereof |
| CN203481226U (en) * | 2013-10-14 | 2014-03-12 | 国家电网公司 | Large power crimping type IGBT device |
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