CN204258276U - A kind of three-phase inversion wired in parallel IGBT drives baffle - Google Patents
A kind of three-phase inversion wired in parallel IGBT drives baffle Download PDFInfo
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- CN204258276U CN204258276U CN201420806275.XU CN201420806275U CN204258276U CN 204258276 U CN204258276 U CN 204258276U CN 201420806275 U CN201420806275 U CN 201420806275U CN 204258276 U CN204258276 U CN 204258276U
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Abstract
The utility model discloses a kind of three-phase inversion wired in parallel IGBT and drive baffle, comprise control chip, driving power monitoring and protecting circuit, gate drive circuit in parallel and short circuit current protective circuit; Gate drive circuit in parallel is connected with the pulse output end of described control chip, and is connected with parallel IGBT respectively; Driving power monitoring and protecting circuit is connected with control chip, and is connected to malfunction output by fault monitoring circuit; Short circuit current protective circuit is connected with described control chip, and is connected with IGBT by short circuit observation circuit.In order to realize the reliable and effective driving of parallel IGBT, power supply monitoring and short circuit current protection, suitable power locomotive accessory power supply.
Description
Technical field
The utility model relates to a kind of three-phase inversion drive plate of AC drive locomotive auxiliary power module, particularly relates to a kind of three-phase inversion wired in parallel IGBT and drives baffle.
Background technology
Three-phase inversion module is an important part in electric locomotive, and be arranged on auxiliary converter cabinet inside, in buck chopper module rear, input voltage is DC540V, exports as AC380V, for the blower fan etc. of locomotive provides power supply.
IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) have easy driving, high pressure resistant current capacity large, at a high speed and the low superperformance such as saturated, be widely used.When how driving parallel IGBT and protect to guarantee the reliable and secure work of IGBT, the layout of drive circuit and drive circuit, has a significant impact the dynamic current equalizing of parallel module, is difficult point and the key of parallel IGBT circuit design.
Summary of the invention
The purpose of this utility model is to provide a kind of can realization and drives baffle to the three-phase inversion wired in parallel IGBT of the reliable and effective driving of parallel IGBT, power supply monitoring and short circuit current protection.
The purpose of this utility model is achieved through the following technical solutions:
Three-phase inversion wired in parallel IGBT of the present utility model drives baffle, comprises control chip, driving power monitoring and protecting circuit, gate drive circuit in parallel and short circuit current protective circuit;
Described gate drive circuit in parallel is connected with the pulse output end of described control chip, and is connected with parallel IGBT respectively;
Described driving power monitoring and protecting circuit is connected with described control chip, and is connected to malfunction output by fault monitoring circuit;
Described short circuit current protective circuit is connected with described control chip, and is connected with IGBT by short circuit observation circuit.
The technical scheme provided as can be seen from above-mentioned the utility model, the three-phase inversion wired in parallel IGBT that the utility model embodiment provides drives baffle, owing to comprising control chip, driving power monitoring and protecting circuit, gate drive circuit in parallel and short circuit current protective circuit; Gate drive circuit in parallel is connected with the pulse output end of described control chip, and is connected with parallel IGBT respectively; Driving power monitoring and protecting circuit is connected with control chip, and is connected to malfunction output by fault monitoring circuit; Short circuit current protective circuit is connected with described control chip, and is connected with IGBT by short circuit observation circuit, protects, suitable power locomotive accessory power supply in order to realization to the reliable and effective driving of parallel IGBT, power supply monitoring and short circuit current.
Accompanying drawing explanation
The circuit block diagram of the three-phase inversion wired in parallel IGBT driving baffle that Fig. 1 provides for the utility model embodiment;
The mounting interface schematic diagram of the three-phase inversion wired in parallel IGBT driving baffle that Fig. 2 provides for the utility model embodiment;
The three-phase inversion wired in parallel IGBT that Fig. 3 and Fig. 4 is respectively the utility model embodiment to be provided drives the circuit theory diagrams of baffle.
Embodiment
To be described in further detail the utility model embodiment below.
Three-phase inversion wired in parallel IGBT of the present utility model drives baffle, its preferably embodiment be:
Comprise control chip, driving power monitoring and protecting circuit, gate drive circuit in parallel and short circuit current protective circuit;
Described gate drive circuit in parallel is connected with the pulse output end of described control chip, and is connected with parallel IGBT respectively;
Described driving power monitoring and protecting circuit is connected with described control chip, and is connected to malfunction output by fault monitoring circuit;
Described short circuit current protective circuit is connected with described control chip, and is connected with IGBT by short circuit observation circuit.
Described gate drive circuit in parallel comprises conducting gate electrode resistance, diode, shutoff door electrode resistance, resistance, Transient Suppression Diode and gate capacitance.
Described control chip is 2SD315A chip;
4th pin of described 2SD315A chip is connected with driving power monitoring and protecting circuit; 1st pin, the 3rd pin are connected with fault output circuit with the 9th pin; 36th pin, the 37th pin, the 39th pin are connected with the short circuit current observation circuit of upper brachium pontis with the 42nd pin; 24th pin, the 25th pin, the 27th pin are connected with the short circuit current observation circuit of lower brachium pontis with the 30th pin; 39th pin is connected with the gate drive circuit in parallel of upper brachium pontis with the 44th pin; 27th pin is connected with the gate drive circuit in parallel of the 32nd pin with lower brachium pontis.
Three-phase inversion wired in parallel IGBT of the present utility model drives baffle, adopts IGBT as switching device, adopts parallel current-sharing, can obtain higher rated current like this.In order to realize the reliable and effective driving of parallel IGBT, power supply monitoring and short circuit current protection.
Specific embodiment:
As shown in Figure 1, driving power observation circuit, control chip, fault output circuit and short circuit current protective circuit is comprised.Described driving power monitoring and protecting circuit is connected with control chip, and for monitoring driving supply voltage, when supply voltage is lower than 12.7V, protective circuit will export low-voltage signal to control chip.
Described fault output circuit is connected to the output of control chip, lights trouble light, is amplified by fault-signal and is transferred to higher level's signal controlling plate.
Described gate drive circuit in parallel is connected with control chip pulse output end, by gate series resistance, the driving pulse that control chip exports is divided into two-way and drives IGBT.
Described short circuit current protective circuit is connected with three-phase inversion module with control chip.Compared by corresponding monitor value during monitoring IGBT conducting and set threshold value, show that monitor value is greater than threshold value if compare, control chip will carry out short-circuit protection by locking pulse shutoff IGBT, exports fault-signal simultaneously.
According to the parallel IGBT drive circuit of above-described embodiment, by a control chip, driving power observation circuit, gate drive circuit in parallel, fault output circuit and short circuit current protective circuit, achieve the effective driving to parallel IGBT and reliably protecting effect.Because control chip integration is high, to control flexibly and mode diversification only needs outside control chip, build a small amount of electronic circuit and just can satisfy the demands.
Parallel IGBT Drive Protecting Circuit in the above-described embodiment, electric pressure according to demand, current peak and driving power, the preferred 2SD315AI of control chip.It based on special chip group, additional other required element composition.This module adopts pulse transformer isolation method; two IGBT module can be driven simultaneously; ± the peak current of the driving voltage of 15V and ± 15A can be provided, have and drive function and overcurrent protection function adjustable flexibly accurately and reliably, under-voltage detection can be carried out to supply voltage simultaneously.There is half-bridge mode of operation and full-bridge mode of operation.In the Drive Protecting Circuit of the parallel IGBT in above-described embodiment, under 2SD315AI is operated in full-bridge mode.
As shown in Figure 2,12 needle connectors are driving power, pulse and the fault input and output side to ACU control board.COL1 and COL2 is the input of short circuit current protection end.G1, E1, G1 ' and E1 ' the gate-drive output stage that is upper brachium pontis.G2, E2, G2 ' and E2 ' the gate-drive output stage that is lower brachium pontis.COL1, COL2, G1, E1, G1 ', E1 ', G2, E2, G2 ' and E2 ' are insert-connecting plate, width 6.3x0.8mm.
The mechanical dimension of drive plate is:
Drive plate thickness: 2.5mm
Drive plate overall dimension: 120mm × 150mm
Installing hole size: 8-Φ 5mm, 106mm × 133mm
The three-phase inversion wired in parallel IGBT that Fig. 3 and Fig. 4 is respectively the utility model embodiment to be provided drives the circuit theory diagrams of baffle.
The above; be only the utility model preferably embodiment; but protection range of the present utility model is not limited thereto; anyly be familiar with those skilled in the art in the technical scope that the utility model discloses; the change that can expect easily or replacement, all should be encompassed within protection range of the present utility model.Therefore, protection range of the present utility model should be as the criterion with the protection range of claims.
Claims (3)
1. three-phase inversion wired in parallel IGBT drives a baffle, it is characterized in that, comprises control chip, driving power monitoring and protecting circuit, gate drive circuit in parallel and short circuit current protective circuit;
Described gate drive circuit in parallel is connected with the pulse output end of described control chip, and is connected with parallel IGBT respectively;
Described driving power monitoring and protecting circuit is connected with described control chip, and is connected to malfunction output by fault monitoring circuit;
Described short circuit current protective circuit is connected with described control chip, and is connected with IGBT by short circuit observation circuit.
2. three-phase inversion wired in parallel IGBT according to claim 1 drives baffle, and it is characterized in that, described gate drive circuit in parallel comprises conducting gate electrode resistance, diode, shutoff door electrode resistance, resistance, Transient Suppression Diode and gate capacitance.
3. three-phase inversion wired in parallel IGBT according to claim 1 drives baffle, and it is characterized in that, described control chip is 2SD315A chip;
4th pin of described 2SD315A chip is connected with driving power monitoring and protecting circuit; 1st pin, the 3rd pin are connected with fault output circuit with the 9th pin; 36th pin, the 37th pin, the 39th pin are connected with the short circuit current observation circuit of upper brachium pontis with the 42nd pin; 24th pin, the 25th pin, the 27th pin are connected with the short circuit current observation circuit of lower brachium pontis with the 30th pin; 39th pin is connected with the gate drive circuit in parallel of upper brachium pontis with the 44th pin; 27th pin is connected with the gate drive circuit in parallel of the 32nd pin with lower brachium pontis.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201420806275.XU CN204258276U (en) | 2014-12-17 | 2014-12-17 | A kind of three-phase inversion wired in parallel IGBT drives baffle |
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CN201420806275.XU CN204258276U (en) | 2014-12-17 | 2014-12-17 | A kind of three-phase inversion wired in parallel IGBT drives baffle |
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CN204258276U true CN204258276U (en) | 2015-04-08 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105071642A (en) * | 2015-08-21 | 2015-11-18 | 永济新时速电机电器有限责任公司 | Parallel drive circuit device with double power input |
CN109032030A (en) * | 2018-08-16 | 2018-12-18 | 株洲联诚集团控股股份有限公司 | A kind of overlength trackless bus high-voltaghe compartment and auxiliary converter cabinet monitor system and method |
-
2014
- 2014-12-17 CN CN201420806275.XU patent/CN204258276U/en active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105071642A (en) * | 2015-08-21 | 2015-11-18 | 永济新时速电机电器有限责任公司 | Parallel drive circuit device with double power input |
CN109032030A (en) * | 2018-08-16 | 2018-12-18 | 株洲联诚集团控股股份有限公司 | A kind of overlength trackless bus high-voltaghe compartment and auxiliary converter cabinet monitor system and method |
CN109032030B (en) * | 2018-08-16 | 2024-04-09 | 株洲联诚集团控股股份有限公司 | Monitoring system and method for super-long trackless bus high-voltage box and auxiliary converter cabinet |
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