CN204597916U - A kind of IGBT drive circuit - Google Patents
A kind of IGBT drive circuit Download PDFInfo
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- CN204597916U CN204597916U CN201520274406.9U CN201520274406U CN204597916U CN 204597916 U CN204597916 U CN 204597916U CN 201520274406 U CN201520274406 U CN 201520274406U CN 204597916 U CN204597916 U CN 204597916U
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Abstract
The utility model relates to electricity field, discloses a kind of IGBT drive circuit, comprises: power supply, signal generating circuit and signal isolating amplifier circuit; Signal isolating amplifier circuit comprises signal isolator; This IGBT drive circuit also comprises over current protecting self-locking circuit; Over current protecting self-locking circuit comprises: the first switch and second switch; The control end of the first switch is connected with the over-current detection output of signal isolator; The input of the first switch is connected with power supply; The output of the first switch is connected with the control end of second switch; The input of second switch is connected with power supply and this over-current detection output respectively; The output head grounding of second switch.The utility model execution mode is when Vce exceeds safe voltage maximum; close IGBT, and block the input of drive singal, thus avoid IGBT under overcurrent operating state; continually opening, overcurrent work, to change in the process such as protection, improve the useful life of IGBT.
Description
Technical field
The utility model relates to electricity field, particularly a kind of IGBT drive circuit.
Background technology
IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) is a kind of electronic device common in control circuit.In the control circuit course of work, due to reasons such as internal signal mistake, external cabling mistakes, usually can cause IGBT short circuit, the electric current in IGBT is sharply increased, now need the short-circuit protection circuit starting IGBT, be burned to avoid IGBT.
The short-circuit protection circuit of existing IGBT; when detecting that the voltage Vce between the collector electrode of IGBT and emitter exceeds safe voltage maximum; the drive circuit of IGBT can cut out output within a period of time; thus close IGBT; but during this period of time; if there is unbalanced pulse signal to input; the drive circuit of IGBT can open IGBT again; IGBT will be operated in continually and open, in overcurrent, the process such as protection; and this overcurrent continually, protection process directly can reduce the life-span of IGBT, even damage IGBT.
In addition; in the simple application occasion of some IGBT; the drive circuit of IGBT does not carry out control realization by software; therefore the drive singal of IGBT is not blocked by software; so design one protective circuit of automatically blocking IGBT drive circuit input signal during hardware implementing IGBT overcurrent; avoid IGBT to be operated in continually opening, in overcurrent, the process such as protection, seem particularly important.
Utility model content
The purpose of this utility model is to provide a kind of IGBT drive circuit; when making the voltage Vce between the collector electrode of IGBT and emitter exceed safe voltage maximum; IGBT is closed within a period of time; block the input of drive singal simultaneously; thus avoid IGBT to be operated in continually opening, change in overcurrent, the process such as protection, improve the useful life of IGBT.
For solving the problems of the technologies described above, execution mode of the present utility model provides a kind of IGBT drive circuit, comprises: power supply, signal generating circuit and signal isolating amplifier circuit; Wherein, the output of described signal generating circuit is connected with the input of described signal isolating amplifier circuit; Described signal isolating amplifier circuit comprises: signal isolator; Described IGBT drive circuit also comprises: over current protecting self-locking circuit;
Described over current protecting self-locking circuit comprises: the first switch and second switch;
The control end of the first switch is connected with the over-current detection output of signal isolator; The input of the first switch is connected with described power supply; The output of the first switch is connected with the control end of second switch; The input of second switch is connected with the over-current detection output of described power supply and signal isolator respectively; The output head grounding of second switch.
The utility model execution mode in terms of existing technologies, the control end of the first switch in over current protecting self-locking circuit is connected with the over-current detection output of signal isolator in signal isolating amplifier circuit, when Vce exceeds safe voltage maximum, signal isolator blocks and exports, when closing IGBT, the over-current detection output of signal isolator sends triggering signal to over current protecting self-locking circuit, trigger the first switch conduction, then second switch conducting is driven, power supply is by second switch ground connection, thus make signal generating circuit be blocked closedown, the input of signal isolation circuit is blocked input, IGBT will be in closed condition always, meanwhile, the over-current detection output of signal isolator by second switch ground connection, thus achieves the self-locking of IGBT drive input signal and closes, and avoids IGBT to be operated in continually opening, changes in overcurrent, the process such as protection, improve the useful life of IGBT.
Further, described first switch, second switch are triode.
Further, described first switch, second switch are metal-oxide semiconductor (MOS) (Metal OxidSemiconductor is called for short " MOS ") field-effect transistor.
Further, described IGBT drive circuit also comprises: reset circuit;
Described reset circuit comprises optocoupler, reset button and insulating power supply; Described insulating power supply is connected with the first pin of described optocoupler by described reset button; 4th pin of described optocoupler is connected with the output of described first switch and the control end of described second switch respectively; The tripod ground connection of described optocoupler.Be conducive to the signal generating circuit restore funcitons of IGBT drive circuit, thus drive the drive circuit of IGBT to reset, close over current protecting self-locking circuit.
Further, described signal isolating amplifier circuit also comprises and recommends amplification electronic circuit;
Recommend amplification electronic circuit described in described signal isolator passes through to be connected with the grid of described IGBT.Be conducive to driving IGBT turn-on and turn-off.
Further, described IGBT drive circuit also comprises over-current detection circuit; Described over-current detection circuit is connected with described signal isolator;
Described over-current detection circuit comprises diode D4, D5; Described power supply is connected with the anode of described D4 and the anode of D5 respectively, and described over-current detection circuit is connected with described signal isolator by the negative electrode of described D4, is connected with the collector electrode of described IGBT by the negative electrode of described D5.Be conducive to detecting in time IGBT whether overcurrent work.
Further, described over current protecting self-locking circuit also comprises: diode D2, D3;
The input of described second switch is connected with described power supply by described D2; Wherein, the anode of described D2 is connected with described power supply, and the negative electrode of described D2 is connected with the input of described second switch;
The output of described first switch is connected with the control end of described second switch by described D3; Wherein, the anode of described D3 is connected with the output of described first switch, and the negative electrode of described D3 is connected with the control end of described second switch.
Further, described signal generating circuit comprises diode D1 and comparator;
The anode of described D1 is connected with the anode of described power supply and D2 respectively; The negative electrode of described D1 respectively with the output of described comparator, and the input of described signal isolator is connected;
Two inputs of described comparator are respectively used to input the threshold voltage that IGBT opens, and described IGBT open shutoff trigger voltage.
Further, described signal generating circuit also comprises the parallel circuits be made up of a resistance and an electric capacity; The negative electrode of described D1 by described parallel circuits respectively with the output of described comparator, and the input of described signal isolator is connected.
Accompanying drawing explanation
Fig. 1 is the electrical block diagram of the IGBT drive circuit according to the utility model first execution mode;
Fig. 2 is the electrical block diagram of the IGBT drive circuit according to the utility model second execution mode;
Fig. 3 is a kind of structural representation applying the brake unit of the frequency converter of present embodiment according to novel second execution mode of this enforcement.
Embodiment
For making the purpose of this utility model, technical scheme and advantage clearly, below in conjunction with accompanying drawing, each execution mode of the present utility model is explained in detail.But, persons of ordinary skill in the art may appreciate that in each execution mode of the utility model, proposing many ins and outs to make reader understand the application better.But, even without these ins and outs with based on the many variations of following execution mode and amendment, each claim of the application technical scheme required for protection also can be realized.
First execution mode of the present utility model relates to a kind of IGBT drive circuit.As shown in Figure 1; this IGBT drive circuit comprises power supply V1, signal generating circuit, signal isolating amplifier circuit, over-current detection circuit and over current protecting self-locking circuit; wherein, signal isolating amplifier circuit is connected with signal generating circuit, over-current detection circuit and over current protecting self-locking circuit respectively.
Specifically, signal generating circuit comprises: resistance R1, R2, diode D1, electric capacity C1 and comparator U1; Wherein, the anode of D1 is connected by R1 and V1; R2 and C1 is in parallel, and forms parallel circuits, and the negative electrode of D1 is connected with the output of U1 and signal isolating amplifier circuit respectively by this parallel circuits, and that is, the output of U1 is connected with signal isolating amplifier circuit by this parallel circuits.Wherein, two inputs of U1 are respectively used to the threshold voltage inputting IGBT unlatching, and the control voltage opening shutoff of IGBT.
Signal isolating amplifier circuit comprises signal isolated amplifier U3 and recommends amplification electronic circuit; Wherein, two input ANODE and CATHODE of U3 are connected with the parallel circuits be made up of R2, C1, and (one end of this parallel circuits is connected with ANODE, the other end is connected with CATHODE), the voltage at these parallel circuits two ends had both been the input voltage of U3.The input of U3 is connected with the grid G of IGBT by recommending amplification electronic circuit.
Over-current detection circuit comprises resistance R8, R9, R10, R11, diode D4, D5 and electric capacity C4.Wherein, V1 is connected by the anode of R11 and D5, is connected respectively by R11, R10 with the anode of D4 and C4; The negative electrode of D5 is connected with the collector electrode C of IGBT, and the negative electrode of D4 is connected by R8 and U3, by R9 ground connection.
Over current protecting self-locking circuit comprises resistance R3, R4, R5, R6, diode D2, D3, the first switch, second switch, electric capacity C3, C5, C6, C7.
Present embodiment will be triode Q1 for the first switch, second switch explains over current protecting self-locking circuit for triode Q2; in actual applications; first switch, second switch also can realize with MOS field-effect transistor; its implementation procedure is similar, and present embodiment repeats no more.
Wherein, the base stage (i.e. the control end of the first switch) of Q1 is connected with the over-current detection output (present embodiment is using the FS interface of signal isolator as over-current detection output) of signal isolator by R3, (anode of D2 is connected by R1 and V1, and the negative electrode of D2 is connected with the base stage of Q1) is connected by D2 and R1 and V1; The parallel circuits that the emitter (i.e. the input of the first switch) of Q1 consists of R4 and C3 and C5 ground connection, be connected by R5 and V1, is connected respectively by C6 with the anode of D3, R6 and C7; The collector electrode (i.e. the output of the first switch) of Q1 is connected (wherein by the base stage (i.e. the control end of second switch) of D3 and Q2, the anode of D3 is connected with the collector electrode of Q1, the negative electrode of D3 is connected with the base stage of Q2), the parallel circuits ground connection formed by R6 and C7.
The collector electrode (i.e. the input of second switch) of Q2 is connected by D2 and R1 and V1, is connected, and is connected with the base stage of over current fault output K, C5 and Q1 respectively by R3 and FS; Emitter (i.e. the output of the second switch) ground connection (being the negative pole of power supply V1) of Q2.
Below will with the positive input terminal of U1 input IGBT open threshold voltage, negative input end input IGBT open turn off trigger voltage be example, the implementation procedure of present embodiment is made specific elaboration.
When IGBT does not need conducting, the IGBT that negative input end inputs opens the threshold voltage turning off trigger voltage and be less than the IGBT unlatching of positive input terminal input, and now, U1 exports high level, and signal generating circuit does not work, the input no signal input of U3.
When negative input end input IGBT open turn off trigger voltage be greater than positive input terminal input IGBT open threshold voltage time, U1 output low level, signal generating circuit is started working, and the output voltage (voltages at the namely above described parallel circuits two ends be made up of R2, C1) of signal generating circuit is the input voltage of U3.This input voltage through U3, and amplifies by recommending the grid G that electronic circuit delivers to IGBT, thus drives IGBT conducting.
In IGBT turn on process; the over-current detection end C of U3 detects Vce (voltage between the collector electrode of IGBT and emitter) by this over-current detection circuit and whether exceeds safe voltage maximum; if Vce does not exceed safe voltage maximum, (namely IGBT normally works; not there is over-current phenomenon avoidance); then the over-current detection end C of U3 is low level always; over-current detection output FS exports high level always; Q1 and Q2 all not conductings now in over current protecting self-locking circuit, over current protecting self-locking circuit does not work.
If Vce exceedes the ceiling voltage of trouble free service, the over-current detection end C of U3 is high level by low transition, and now U3 blocks and exports, and closes IGBT; Meanwhile, the output of the over-current detection output FS of U3 becomes low level from high level, Q1 conducting, thus triggers the unlatching of overcurrent protection latching circuit.
After over current protecting self-locking circuit is opened, the voltage at resistance R6 two ends (i.e. R6 and C7 form the voltage at parallel circuits two ends) drives Q2 conducting by D3, V1 is by the line-to-ground at R1, D2, Q2 place, thus block shutdown signal circuit for generating, the input of U3 is also blocked that (signal generating circuit is blocked immediately, cause the input of U3 without input signal), IGBT will be in non-conducting state always; The over-current detection output FS of U3 is by R3, Q2 ground connection simultaneously; to output low level always; thus achieve the self-locking of IGBT drive input signal and close, avoid IGBT continually opening, change in overcurrent, the process such as protection, improve the useful life of IGBT.
Second embodiment of the invention relates to a kind of IGBT drive circuit.Second execution mode is the further improvement done on the basis of the first execution mode, and its improvements are: in second embodiment of the invention, and this IGBT drive circuit also comprises reset circuit.
Specifically, as shown in Figure 2, this reset circuit comprises: insulating power supply V2, resistance R7, R12, electric capacity C8 and reset button S.
Insulating power supply V2 by reset button S respectively with first pin (i.e. the position at number in the figure 1 place) of optocoupler, and the parallel circuits be made up of R7 with C8 is connected; 4th pin (i.e. the position at number in the figure 4 place) of optocoupler is connected with the collector electrode of Q1, and is connected by the base stage of D3 and Q2; The tripod (i.e. the position at number in the figure 3 place) of optocoupler and crus secunda (i.e. the position at number in the figure 2 place) ground connection.
When overcurrent self-locking is protected, Q2 is driven conducting, and now over current fault output K is by Q2 ground connection, and fault quoted by fault drive circuit, and staff can according to quoted trouble hunting circuit.After maintenance circuit is errorless, presses reset button S and IGBT drive circuit is resetted.
In the present embodiment; reset circuit is the pulse reset by reset button; after reset button presses action; insulating power supply is accessed the prime of U2, U2 conducting, the base stage of over current protecting self-locking circuit Q2 passes through the secondary ground connection of U2; now; Q2 closes, and the circuit at R1, D2, Q2 place disconnects, and signal generating circuit recovers to restart work.Meanwhile, the output of the over-current detection output FS of U3 becomes high level, and Q1 turns off, and IGBT drive circuit resets, and over current protecting self-locking circuit quits work.
Below by for the brake unit of the frequency converter of an application present embodiment, present embodiment is explained.
As shown in Figure 3, this brake unit comprises drive plate and IGBT module; This drive plate comprises Switching Power Supply, the drive circuit (comprising signal generating circuit and signal isolating amplifier circuit) of IGBT, over-current detection circuit, over current protecting self-locking circuit and reset circuit; Wherein, the busbar voltage of the input access frequency converter of Switching Power Supply; the output of Switching Power Supply exports the power supply (V1 namely in present embodiment) of drive circuit, over-current detection circuit and over current protecting self-locking circuit for supplying IGBT respectively, and the insulating power supply of reset circuit (V2 namely in present embodiment).
The upper brachium pontis of IGBT module is in closed condition always, present embodiment is using the fly-wheel diode of the diode of upper brachium pontis as the lower brachium pontis break-make of control, this fly-wheel diode and brake resistance are in parallel, and the lower brachium pontis of this IGBT module is as the on-off switch of brake unit.This brake unit is connected with frequency converter by brake resistance.
Generally, after exchanging 380V rectification, the DC bus-bar voltage of output is 520V, and when frequency converter starts to brake, DC bus-bar voltage rises, in this process, the threshold voltage that the busbar voltage that the comparator on drive plate can compare frequency converter is always opened with braking.
When busbar voltage reaches 690V (now, busbar voltage exceedes the threshold voltage that braking is opened), the output level of comparator from high to low, signal generating circuit is started working, and produces the square wave with certain duty ratio, and the duty ratio of square wave changes along with needing the change of the power of braking, in general, braking power is comparatively large, and duty cycle square wave is also just comparatively large, and the time that brake unit is opened is also just longer.
This square wave is through signal isolator and recommend the break-make of amplifying electronic circuit driving IGBT, the energy that frequency converter bus is braked by brake resistance and IGBT release.In this process, over-current detection circuit is detecting down the Vce voltage of the IGBT of brachium pontis always, if brake resistance does not occur that short circuit or IGBT do not have overcurrent to occur, Vce voltage is in range of safety operation, if brake resistance occurs that short circuit or other reasons cause the work of IGBT overcurrent, now Vce voltage exceedes safe operating voltage, signal isolator is after detecting, output a period of time (20 μ s) of IGBT drive circuit can be blocked, and close IGBT, meanwhile, the latching circuit work of overcurrent protection, block the signal generating circuit of IGBT drive circuit, after blocking 20 μ s of driver output, even if busbar voltage exceedes the threshold voltage that braking is opened, IGBT also can not conducting.Meanwhile, on drive plate, fault output circuit can quote fault-signal notice protection frequency converter, after inspection Failure elimination, can also remove self-lock protection by reset circuit, recover normal operating conditions.Avoiding problems IGBT constantly opening, conversion and cause IGBT to reduce life-span or damage because of heating in overcurrent, the process such as protection.This safeguard measure safety and reliability protect IGBT, extend the life-span of IGBT, with Times fault export, also protect frequency converter.
Be not difficult to find, in above-mentioned case, do not have main control chip in brake unit, that is, present case is when IGBT overcurrent, blocked by hardware implementing drive circuit input signal, this way, carrys out the product (in general, the drive circuit of the IGBT of this series products is not realized by software) of work for some simple application IGBT, cost (not needing to be equipped with control program etc. for it specially again) can be saved, the life-span of IGBT can be extended again.
Persons of ordinary skill in the art may appreciate that the respective embodiments described above realize specific embodiment of the utility model, and in actual applications, various change can be done to it in the form and details, and do not depart from spirit and scope of the present utility model.
Claims (9)
1. an IGBT drive circuit, comprises: power supply, signal generating circuit and signal isolating amplifier circuit; Wherein, the output of described signal generating circuit is connected with the input of described signal isolating amplifier circuit; Described signal isolating amplifier circuit comprises: signal isolator; It is characterized in that, described IGBT drive circuit also comprises: over current protecting self-locking circuit;
Described over current protecting self-locking circuit comprises: the first switch and second switch;
The control end of the first switch is connected with the over-current detection output of signal isolator; The input of the first switch is connected with described power supply; The output of the first switch is connected with the control end of second switch; The input of second switch is connected with the over-current detection output of described power supply and signal isolator respectively; The output head grounding of second switch.
2. IGBT drive circuit according to claim 1, is characterized in that, described first switch, second switch are triode.
3. IGBT drive circuit according to claim 1, is characterized in that, described first switch, second switch are metal-oxide semiconductor (MOS) MOS field-effect transistor.
4. IGBT drive circuit according to claim 1, is characterized in that, described IGBT drive circuit also comprises: reset circuit;
Described reset circuit comprises optocoupler, reset button and insulating power supply; Described insulating power supply is connected with the first pin of described optocoupler by described reset button; 4th pin of described optocoupler is connected with the output of described first switch and the control end of described second switch respectively; The tripod ground connection of described optocoupler.
5. IGBT drive circuit according to claim 1, is characterized in that, described signal isolating amplifier circuit also comprises recommends amplification electronic circuit;
Recommend amplification electronic circuit described in described signal isolator passes through to be connected with the grid of described IGBT.
6. IGBT drive circuit according to claim 1, is characterized in that, described IGBT drive circuit also comprises over-current detection circuit; Described over-current detection circuit is connected with described signal isolator;
Described over-current detection circuit comprises diode D4, D5; Described power supply is connected with the anode of described D4 and the anode of D5 respectively, and described over-current detection circuit is connected with described signal isolator by the negative electrode of described D4, is connected with the collector electrode of described IGBT by the negative electrode of described D5.
7. IGBT drive circuit according to claim 1, is characterized in that, described over current protecting self-locking circuit also comprises: diode D2, D3;
The input of described second switch is connected with described power supply by described D2; Wherein, the anode of described D2 is connected with described power supply, and the negative electrode of described D2 is connected with the input of described second switch;
The output of described first switch is connected with the control end of described second switch by described D3; Wherein, the anode of described D3 is connected with the output of described first switch, and the negative electrode of described D3 is connected with the control end of described second switch.
8. IGBT drive circuit according to claim 7, is characterized in that, described signal generating circuit comprises diode D1 and comparator;
The anode of described D1 is connected with the anode of described power supply and D2 respectively; The negative electrode of described D1 respectively with the output of described comparator, and the input of described signal isolator is connected;
Two inputs of described comparator are respectively used to input the threshold voltage that IGBT opens, and described IGBT open shutoff trigger voltage.
9. IGBT drive circuit according to claim 8, is characterized in that, described signal generating circuit also comprises the parallel circuits be made up of a resistance and an electric capacity; The negative electrode of described D1 by described parallel circuits respectively with the output of described comparator, and the input of described signal isolator is connected.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520274406.9U CN204597916U (en) | 2015-04-30 | 2015-04-30 | A kind of IGBT drive circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520274406.9U CN204597916U (en) | 2015-04-30 | 2015-04-30 | A kind of IGBT drive circuit |
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| CN204597916U true CN204597916U (en) | 2015-08-26 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105207653A (en) * | 2015-09-10 | 2015-12-30 | 广东美的制冷设备有限公司 | Overcurrent protection system and air-conditioner |
| CN105790554A (en) * | 2016-04-06 | 2016-07-20 | 杭州电子科技大学 | IGBT circuit having dual-isolation characteristic and control method thereof |
| CN112511143A (en) * | 2020-12-15 | 2021-03-16 | 四川虹美智能科技有限公司 | IGBT protection circuit and protection method |
-
2015
- 2015-04-30 CN CN201520274406.9U patent/CN204597916U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105207653A (en) * | 2015-09-10 | 2015-12-30 | 广东美的制冷设备有限公司 | Overcurrent protection system and air-conditioner |
| CN105207653B (en) * | 2015-09-10 | 2018-05-11 | 广东美的制冷设备有限公司 | A kind of Over Current Protection System and air conditioner |
| CN105790554A (en) * | 2016-04-06 | 2016-07-20 | 杭州电子科技大学 | IGBT circuit having dual-isolation characteristic and control method thereof |
| CN105790554B (en) * | 2016-04-06 | 2018-02-06 | 杭州电子科技大学 | A kind of IGBT drive circuit and control method with dual resisteance |
| CN112511143A (en) * | 2020-12-15 | 2021-03-16 | 四川虹美智能科技有限公司 | IGBT protection circuit and protection method |
| CN112511143B (en) * | 2020-12-15 | 2023-11-21 | 四川虹美智能科技有限公司 | IGBT protection circuit and protection method |
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