CN204257705U

CN204257705U - Led chip

Info

Publication number: CN204257705U
Application number: CN201420371625.4U
Authority: CN
Inventors: 梁秉文
Original assignee: Suzhou Institute of Nano Tech and Nano Bionics of CAS
Current assignee: Suzhou Institute of Nano Tech and Nano Bionics of CAS
Priority date: 2014-07-07
Filing date: 2014-07-07
Publication date: 2015-04-08
Anticipated expiration: 2024-07-07

Abstract

This application discloses a kind of LED chip, this chip comprises transparent substrates and is formed at the epitaxial loayer in described transparent substrates, described epitaxial loayer comprises the first semiconductor layer be formed at successively in described transparent substrates, luminescent layer and the second semiconductor layer, is formed with light reflection structure between the lower surface of described transparent substrates and luminescent layer.The utility model, on the LED chip made, forms light reflection structure by laser means in the inside of semiconductor layer or substrate, decreases the distance of light path, improve the light extraction efficiency of LED.Simultaneously for GaN base LED, at lf or after having burnt, some in GaN layer can also be partially formed Ga metallic particles, by the effect of metallic particles, light reflecting effect can be improved further.

Description

LED chip

Technical field

The application relates to a kind of light emitting semiconductor device, particularly relates to a kind of LED chip.

Background technology

Last century, the sixties, first LED product was born in the U.S., and its appearance brings a lot of brilliance to the life of people, and have the advantages such as life-span length, low-power consumption, environmental protection due to LED, associated technical development obtains very fast.The photoelectric device that it becomes " ubiquitous " and our life is closely bound up and light source, the backlight of such as mobile phone, traffic lights, large-screen full color display and view brightening lamp etc.

The bottleneck of the further application and development of current restriction LED is its price and light extraction efficiency and heat radiation, use in theory the luminous efficiency of blue LED excited yellow fluorescent material synthesize white light up to every watt 300 multithread bright, but present actual efficiency is less than 2/3rds of theoretical value, about the half of theoretical value that the chances are, one of them major reason is that the light that a part sends from active region cannot escape out from LED chip inside.

Existing LED chip, in order to improve light extraction efficiency, generally arranges reflective mirror at the lower surface of substrate, but optical transport needs through longer route and multiple interface to reflective mirror, and in communication process, light loss is more.

Utility model content

The purpose of this utility model is to provide a kind of LED chip.

For achieving the above object, the utility model provides following technical scheme:

The embodiment of the present application discloses a kind of LED chip, comprise transparent substrates and be formed at the epitaxial loayer in described transparent substrates, described epitaxial loayer comprises the first semiconductor layer be formed at successively in described transparent substrates, luminescent layer and the second semiconductor layer, is formed with light reflection structure between described transparent substrates lower surface and luminescent layer.

Preferably, in above-mentioned LED chip, described light reflection structure comprises the multiple luminous points being formed at described first semiconductor layer inside and/or transparent substrates inside, and described luminous point is a cavity.

Preferably, in above-mentioned LED chip, described first semiconductor layer is GaN layer, and the cavity being positioned at described first semiconductor layer inside is also formed with Ga metallic particles.

Preferably, in above-mentioned LED chip, the width of described luminous point is greater than the emission wavelength of LED chip.

Preferably, in above-mentioned LED chip, the width of described luminous point is 1 ~ 5 μm, is spaced apart 0.1 ~ 2 μm between adjacent spot.

Preferably, in above-mentioned LED chip, described light reflection structure is different boundary, diffuse reflection interface or nonplanar structure.

Compared with prior art, the utility model has the advantage of: the utility model, on the LED chip made, forms catoptric arrangement by laser means in the inside of semiconductor layer or substrate, decreases the distance of light path, improve light extraction efficiency.Simultaneously for GaN base LED, at lf or after having burnt, Ga metallic particles can also be formed, by the effect of metallic particles, reflecting effect can be improved further.

Accompanying drawing explanation

In order to be illustrated more clearly in the embodiment of the present application or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, the accompanying drawing that the following describes is only some embodiments recorded in the application, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.

Figure 1 shows that the structural representation of LED chip in the utility model specific embodiment.

Embodiment

Below in conjunction with the accompanying drawing in the utility model embodiment, be described in detail the technical scheme in the utility model embodiment, obviously, described embodiment is only the utility model part embodiment, instead of whole embodiments.Based on the embodiment in the utility model, the every other embodiment that those of ordinary skill in the art obtain under the prerequisite not making creative work, all belongs to the scope of the utility model protection.

Shown in ginseng Fig. 1, LED chip comprises transparent substrates 1 and is formed at the epitaxial loayer 2 in transparent substrates 1, epitaxial loayer 2 comprises the first semiconductor layer 21 be formed at successively in transparent substrates 1, luminescent layer 22 and the second semiconductor layer 23, is formed with light reflection structure 3 between transparent substrates 1 lower surface and luminescent layer 22.

The material of transparent substrates 1 is preferably from sapphire, and its material can also be carborundum, GaN, zinc oxide or clear glass.

First semiconductor layer 21 is preferably GaN layer, and it comprises and is formed at undoped GaN layer 211 in transparent substrates 1 and doping type GaN layer 212 successively.When GaN layer 212 is adulterated for N-type, correspondingly, the GaN layer that the second semiconductor layer 23 adulterates for P type; When GaN layer 212 is adulterated for P type, correspondingly, the GaN layer that the second semiconductor layer 23 adulterates for N-type.

Light reflection structure 3 is preferably multiple luminous points that array is arranged, and each luminous point is a cavity, or is out of phase interface.Luminous point is preferably formed in the inside of the inside of undoped GaN layer 211 and/or the inside of doping type GaN layer 212 and/or transparent substrates 1.Preferred, luminous point is formed at the inside of undoped GaN layer 211.In order to effectively reflect light, the width of luminous point is greater than the emission wavelength of LED chip.Preferably, the width of luminous point is 1 ~ 5 μm, and the interval between adjacent spot is the smaller the better, but in order to ensure the intensity of chip, the interval between adjacent spot is preferably 0.1 ~ 2 μm.

Further, in cavity, Ga metallic particles can also be formed with, by the effect of Ga metallic particles, light emission rate can be improved further.

Light reflection structure 3 can also be an irreflexive interface (matsurface), and it can be continuous print interface, also can be to be made up of multiple elemental areas of array, and elemental area can be positioned at same plane, also can be positioned at different height.Irreflexive the optional position that can be formed between transparent substrates lower surface and luminescent layer, comprises the upper surface of the first semiconductor layer, lower surface or inside, and the upper surface of transparent substrates or inside.

Light reflection structure 3 can also be nonplanar structure.This nonplanar structure can be formed at the optional position between transparent substrates lower surface and luminescent layer, comprises the upper surface of the first semiconductor layer, lower surface or inside, and the upper surface of transparent substrates or inside.

The above-mentioned manufacture method with the LED chip of light emission structure comprises the steps:

First, make LED chip, specifically comprise: make the first semiconductor layer, luminescent layer and the second semiconductor layer on a transparent substrate successively;

Secondly, by transparent substrates side, by Laser Focusing melting or the means of burning, inside that is inner in transparent substrates or the first semiconductor layer makes portion of material gasify, forms cavity, is melted formation Ga metallic particles after the Ga solidification fallen simultaneously.

Control the focused condition of laser, the light emission structure of on-plane surface or matsurface can also be formed on the inside of transparent substrates and the first semiconductor layer.

It should be noted that, in this article, the such as relational terms of first and second grades and so on is only used for an entity or operation to separate with another entity or operating space, and not necessarily requires or imply the relation that there is any this reality between these entities or operation or sequentially.And, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thus make to comprise the process of a series of key element, method, article or equipment and not only comprise those key elements, but also comprise other key elements clearly do not listed, or also comprise by the intrinsic key element of this process, method, article or equipment.When not more restrictions, the key element limited by statement " comprising ... ", and be not precluded within process, method, article or the equipment comprising described key element and also there is other identical element.

The above is only the embodiment of the application; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the application's principle; can also make some improvements and modifications, these improvements and modifications also should be considered as the protection range of the application.

Claims

1. a LED chip, it is characterized in that, comprise transparent substrates and be formed at the epitaxial loayer in described transparent substrates, described epitaxial loayer comprises the first semiconductor layer be formed at successively in described transparent substrates, luminescent layer and the second semiconductor layer, is formed with light reflection structure between the lower surface of described transparent substrates and luminescent layer.

2. LED chip according to claim 1, is characterized in that: described light reflection structure comprises the multiple luminous points being formed at described first semiconductor layer inside and/or transparent substrates inside, and described luminous point is a cavity.

3. LED chip according to claim 2, is characterized in that: described first semiconductor layer is GaN layer, and the cavity being positioned at described first semiconductor layer inside is also formed with Ga metallic particles.

4. LED chip according to claim 2, is characterized in that: the width of described luminous point is greater than the emission wavelength of LED chip.

5. LED chip according to claim 4, is characterized in that: the width of described luminous point is 1 ~ 5 μm, is spaced apart 0.1 ~ 2 μm between adjacent spot.

6. LED chip according to claim 1, is characterized in that: described light reflection structure is different boundary, diffuse reflection interface or nonplanar structure.