CN204243042U - A kind of image sensor apparatus - Google Patents

A kind of image sensor apparatus Download PDF

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Publication number
CN204243042U
CN204243042U CN201420589966.9U CN201420589966U CN204243042U CN 204243042 U CN204243042 U CN 204243042U CN 201420589966 U CN201420589966 U CN 201420589966U CN 204243042 U CN204243042 U CN 204243042U
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Prior art keywords
image sensor
sensor apparatus
interconnection layer
image
multiple conductive
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CN201420589966.9U
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栾竟恩
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STMicroelectronics SRL
STMicroelectronics Pte Ltd
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STMicroelectronics Pte Ltd
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Abstract

The utility model relates to a kind of image sensor apparatus.Image sensor apparatus can comprise: interconnection layer, has the opening extending through this interconnection layer; Image sensor IC, is arranged in opening and has image-sensing surface; And infrared light filter, aim at image-sensing surface.Image sensor apparatus can comprise: encapsulating material, laterally around image sensor IC, and fills opening; And flexible interconnect layer, be coupled to the interconnection layer relative with image-sensing surface.Image sensor apparatus of the present utility model can provide low section device.This low section realizes when the silicon through hole technology that not use cost is very high.This image sensor apparatus provides the distance reduced between image sensor IC and lens.In addition, use the flange part of encapsulating material, make the attachment of flexible interconnect layer can not be increased to the whole height of image sensor apparatus.

Description

A kind of image sensor apparatus
Technical field
The disclosure relates to electronic device field, and relates more specifically to imageing sensor.
Background technology
Typically, electronic equipment comprises one or more photographing module, for providing the media function of enhancing.Such as, typical electronic equipment can use photographing module to carry out photograph taking and video conference call.In the typical electronic equipment with multiple photographing module, main photographing module has high pixel density and pancratic lens system, and secondary photographing module is preposition and has lower picture element density.In addition, secondary photographing module can have fixed focus lens system.
Such as, the U.S. Patent application No. 2009/0057544 (transferring the assignee of the application) of the people such as Brodie discloses a kind of photographing module for mobile device.This photographing module comprises lens, carries the housing of lens and is positioned at the lens cap above lens and housing.Photographing module comprises the barrel mechanism (barrel mechanism) for regulating lens.Comprise in the process of the electronic equipment of one or more photographing module in manufacture, expect to manufacture electronic equipment as far as possible rapidly, especially in production in enormous quantities running.
Typical photographing module is obtained in multi-step process.The first step comprises semiconductor processes, to provide image sensor IC (IC).Next step comprises test to some forms of image sensor IC and encapsulation.Image sensor IC can be assemblied in photographing module, if needed, can also assemble together with lens and moveable cylindrical shell.This assembling of photographing module manually can be completed and also can be completed by machine.Such as, in the electronic equipment of the face of use dress formula parts, parts can be assembled on printed circuit board (PCB) (PCB) by attachment (PNP) machine.The shortcoming of this single encapsulation is that it may relative inefficiencies, and each equipment may be needed to test separately, thus adds manufacturing time.
In some applications, image sensor IC is fabricated to comprise infrared light (IR) filter glass may be favourable.In a kind of mode, IR filter glass is attached at above image sensor IC.The latent defect of this mode is the gross thickness that possible increase equipment, and this may be less desirable for the Mobile solution closely arranged.
With reference to Fig. 1, show a kind of mode of image sensor apparatus 20.Image sensor apparatus 20 exemplarily comprises interconnection layer 21, the image sensor IC 22 on interconnection layer, the adhesive layer 29 between image sensor IC and interconnection layer and image sensor IC is coupled to multiple bonding line 23a-23b of interconnection layer.In addition, image sensor apparatus 20 exemplarily comprises the lens module 27 be positioned at above interconnection layer 21 and the adhesive layer 72 lens module and interconnection layer 21 are coupled.Image sensor apparatus 20 exemplarily comprises the adhesive layer 25 be positioned on lens module 27 and infrared light (IR) filter 26 be positioned on adhesive layer.Interconnection layer 21 exemplarily comprises multiple contact 71a-71c.
Utility model content
The purpose of this utility model is to provide a kind of image sensor apparatus that can overcome above-mentioned prior art defect.
Image sensor apparatus can comprise: interconnection layer, has the opening extending through this interconnection layer; Image sensor IC, is arranged in opening, and has image-sensing surface; And IR filter, aim at image-sensing surface.Image sensor apparatus can comprise: encapsulating material, laterally around image sensor IC, and fills opening; And flexible interconnect layer, be coupled to the interconnection layer relative with image-sensing surface.
Particularly, flexible interconnect layer can have the opening being arranged in this flexible interconnect layer, and encapsulating material can extend through the interconnection layer relative with image-sensing surface, limits flange part.The opening of flexible interconnect layer can be aimed at flange part.
Flexible interconnect layer can comprise: flexible substrate, from the outside horizontal expansion of interconnection layer; Multiple conductive trace, is positioned in flexible substrate; And connector, carried by flexible substrate, and be coupled to multiple conductive trace.This image sensor apparatus may further include the lens subassembly with IR filter alignment.
Additionally, image sensor apparatus may further include the adhesive layer between interconnection layer and lens subassembly.Image sensor IC can comprise multiple conductive bond pads of Semiconductor substrate and adjacent image sensitive surface.
In certain embodiments, image sensor apparatus may further include electronic unit, and this electronic unit is arranged in encapsulating material and is coupled to interconnection layer.Interconnection layer can comprise the multiple conductive trace being arranged in interconnection layer and the multiple conductive contact pieces being coupled respectively to multiple conductive trace.Image sensor apparatus may further include the multiple bonding lines be coupling between multiple conductive contact piece and image sensor IC.
There is provided a kind of image sensor apparatus on the other hand, it is characterized in that, comprising: interconnection layer that there is the opening extending through described interconnection layer; Image sensor IC, is arranged in described opening, and has image-sensing surface; Infrared light filter, aims at described image-sensing surface; Lens subassembly, with described infrared light filter alignment; Encapsulating material, laterally around described image sensor IC, and fills described opening, and described encapsulating material extends through the described interconnection layer relative with described image-sensing surface, limits flange part; And flexible interconnect layer, be coupled to the described interconnection layer relative with described image-sensing surface, described flexible interconnect layer has the opening being arranged in described flexible interconnect layer, and the opening of described flexible interconnect layer is aimed at described flange part.
More specifically, described flexible interconnect layer comprises: flexible substrate, from the outside horizontal expansion of described interconnection layer; Multiple conductive trace, is positioned in described flexible substrate; And connector, carried by described flexible substrate, and be coupled to described multiple conductive trace.
Additionally, described image sensor apparatus may further include the adhesive layer between described interconnection layer and described lens subassembly.
More specifically, described image sensor IC can comprise multiple conductive bond pads of Semiconductor substrate and contiguous described image-sensing surface.
Additionally, described image sensor apparatus may further include electronic unit, and described electronic unit is arranged in described encapsulating material and is coupled to described interconnection layer.
More specifically, described interconnection layer comprises the multiple conductive trace being arranged in described interconnection layer and the multiple conductive contact pieces being coupled respectively to described multiple conductive trace.
Image sensor apparatus of the present utility model can provide low section device, and this is expect for mobile device application.In addition, this low section realizes when the silicon through hole technology that not use cost is very high.This image sensor apparatus provides the distance reduced between image sensor IC and lens.In addition, use the flange part of encapsulating material, make the attachment of flexible interconnect layer can not be increased to the whole height of image sensor apparatus.
Accompanying drawing explanation
Fig. 1 is the sectional view of the image sensor apparatus according to prior art.
Fig. 2 A is the sectional view according to image sensor apparatus of the present disclosure.
Fig. 2 B is the bottom plan view of the image sensor apparatus of Fig. 2 A.
Fig. 3-Fig. 6 is the sectional view of each step of the method for image sensor apparatus for the manufacture of Fig. 2 A-Fig. 2 B.
Fig. 7 A and Fig. 7 B is sectional view (7A along the line) and the bottom plan view of the image sensor apparatus of Fig. 2 A-Fig. 2 B without flexible interconnect layer respectively.
Embodiment
Describe the utility model more all sidedly now with reference to accompanying drawing, illustrated therein is some embodiments of the present disclosure.But the form that these embodiments can be much different is implemented, and should not be construed as limited to embodiment described herein.Certainly, provide these embodiments to be to make the disclosure fully with complete, and the scope of the present disclosure can be passed on to those skilled in the art comprehensively.Label identical herein represents identical assembly.
First with reference to Fig. 2 A-Fig. 2 B, describe according to image sensor apparatus 100 of the present disclosure now.Image sensor apparatus 100 schematically comprises: interconnection layer 101, has the opening 103 (schematically, shape is square/rectangle) extending through this interconnection layer; Image sensor IC 102, is arranged in opening, and has image-sensing surface 120; And IR filter 104, be close to image-sensing surface and aim at.Image sensor IC 102 schematically comprises multiple conductive bond pads 122a-122b of Semiconductor substrate 140 and adjacent image sensitive surface 120.
Image sensor apparatus 100 schematically comprises: encapsulating material 105, laterally around image sensor IC 102, and fills opening 103; And flexible interconnect layer 106, aim at and be coupled to the interconnection layer relative with image-sensing surface 120.Flexible interconnect layer 106 schematically comprises: the opening 107 (schematically, shape is square/rectangle) being arranged in this flexible interconnect layer.
Encapsulating material 105 schematically extends vertically through the interconnection layer 101 relative with image-sensing surface 120, limit flange part, and horizontal expansion is coupled to provide machine security on interconnection layer.As possibility best seen in Fig. 2 A, flange part is mushroom/rivet shape.The opening 107 of flexible interconnect layer 106 is aimed at flange part and the flange part of adjacent encapsulating material 105.
Flexible interconnect layer 106 schematically comprises: flexible substrate 108, from interconnection layer 101 outwards horizontal expansion; Multiple conductive trace 109, is positioned in flexible substrate; And connector 110, carried by flexible substrate, and be coupled to multiple conductive trace.Connector 110 will be coupled to the external circuit of the electronic equipment of load image sensor device 100.
Image sensor apparatus 100 schematically comprises contiguous interconnection layer 101 and the lens subassembly 111 aimed at IR filter 104.Lens subassembly 111 schematically comprises housing 124, the lens barrel 112 carried by housing and the multiple lens 113a-113b by barrel bearing.Additionally, image sensor apparatus 100 schematically comprises the adhesive layer 114 between interconnection layer 101 and lens subassembly 111 and another adhesive layer 115 between lens subassembly and IR filter 104.
In an exemplary embodiment, image sensor apparatus 100 schematically comprises electronic unit 116 (such as, capacitor, resistor, processor), and this electronic unit is arranged in encapsulating material 105 and is coupled to interconnection layer 101.In other embodiments, electronic unit 116 can be surface mounted on flexible interconnect layer 106.
Interconnection layer 101 schematically comprise substrate 117, by multiple conductive traces 118 of substrate supporting, the multiple conductive traces be coupled respectively on the upper surface of this substrate multiple first conductive contact piece 123a-123b and be coupled respectively to multiple second conductive contact piece 121a-121b of the multiple conductive traces on the lower surface of this substrate.As possibility best seen in Fig. 7 B, multiple second conductive contact piece 121a-121b is arranged in square pad, and extends above the interconnection layer 101 of flange part on whole four sides of opening 103.
Image sensor apparatus 100 schematically comprises the multiple bonding line 119a-119b between multiple conductive bond pads 122a-122b and multiple first conductive contact piece 123a-123b being coupling in image sensor IC 102.Multiple second conductive contact piece 121a-121b is coupled to the multiple conductive traces 109 in flexible substrate 108.
Should be understood that above-mentioned arbitrary conductive component all can comprise at least one in copper, aluminium, gold, tin and silver.Listed above is only exemplary, and also can use other electric conducting materials a lot.In addition, substrate 117,108 can comprise dielectric material.
Advantageously, image sensor apparatus 100 provides low section (profile) device, and this is expect for mobile device application.In addition, this low section realizes when the silicon through hole technology that not use cost is very high.This image sensor apparatus 100 provides the distance reduced between image sensor IC 102 and lens 113a-113b.In addition, use the flange part of encapsulating material 105, make the attachment of flexible interconnect layer 106 can not be increased to the whole height of image sensor apparatus 100.
Relate to a kind of method manufacturing image sensor apparatus 100 on the other hand.The method can comprise: form interconnection layer 101, to have the opening 103 extending through this interconnection layer; And image sensor IC 102 is positioned to be arranged in opening and there is image-sensing surface 120.The method can comprise: be positioned to by IR filter 104 contiguous with image-sensing surface 120 and aim at; Form encapsulating material 105, laterally to fill opening 103 around image sensor IC 102; And flexible interconnect layer 106 is positioned to aim at the interconnection layer 101 relative with image-sensing surface.
Now additionally with reference to Fig. 3-Fig. 7 B, the exemplary embodiment of the method for the manufacture of image sensor apparatus 100 is described.In figure 3, substrate is formed by carrier layer 130 and the adhesive layer in carrier layer 130 131.Substrate portions is attached to carrier layer 130, to be defined for the interconnection layer 101 of the first image sensor apparatus 100a and the second image sensor apparatus 100b.Should be understood that the example illustrated creates two image sensor apparatus 100a, 100b, only for illustrating object, and disclosed method can manufacture more device simultaneously.
In the diagram, during molding process, encapsulating material 105a, 105b is formed.In Figure 5, release vehicle layer 130 and flip substrate part, and form multiple bonding line 119aa-119bb for being coupled between multiple conductive bond pads 122aa-122bb and multiple conductive contact piece 123aa-123bb of image sensor IC 102a, 102b.
In figure 6, lens subassembly 111a, 111b are attached to substrate portions.In Fig. 7 A-Fig. 7 B, such as, by cutter separate picture sensor device 100a, 100b.Finally, flexible interconnect layer 106 is coupled to image sensor apparatus 100a, 100b.
Those skilled in the art described above with the instruction that presents in relevant drawings after can expect a lot of amendment of the present disclosure and other embodiments.Therefore, should be understood that the disclosure is not intended to be limited to the specific embodiment of disclosure, and be intended to various amendment and embodiment to comprise within the scope of the appended claims.

Claims (15)

1. an image sensor apparatus, is characterized in that, comprising:
Interconnection layer, has the opening extending through described interconnection layer;
Image sensor IC, is arranged in described opening, and has image-sensing surface;
Infrared light filter, aims at described image-sensing surface;
Encapsulating material, laterally around described image sensor IC, and fills described opening; And
Flexible interconnect layer, is coupled to the described interconnection layer relative with described image-sensing surface.
2. image sensor apparatus according to claim 1, is characterized in that, described flexible interconnect layer has the opening being arranged in described flexible interconnect layer; Described encapsulating material extends through the described interconnection layer relative with described image-sensing surface, limits flange part; And the opening of described flexible interconnect layer is aimed at described flange part.
3. image sensor apparatus according to claim 1, is characterized in that, described flexible interconnect layer comprises: flexible substrate, from the outside horizontal expansion of described interconnection layer; Multiple conductive trace, is positioned in described flexible substrate; And connector, carried by described flexible substrate, and be coupled to described multiple conductive trace.
4. image sensor apparatus according to claim 1, is characterized in that, comprises the lens subassembly with described infrared light filter alignment further.
5. image sensor apparatus according to claim 4, is characterized in that, comprises the adhesive layer between described interconnection layer and described lens subassembly further.
6. image sensor apparatus according to claim 1, is characterized in that, described image sensor IC comprises multiple conductive bond pads of Semiconductor substrate and contiguous described image-sensing surface.
7. image sensor apparatus according to claim 1, is characterized in that, comprises electronic unit further, and described electronic unit is arranged in described encapsulating material and is coupled to described interconnection layer.
8. image sensor apparatus according to claim 1, is characterized in that, described interconnection layer comprises the multiple conductive trace being arranged in described interconnection layer and the multiple conductive contact pieces being coupled respectively to described multiple conductive trace.
9. image sensor apparatus according to claim 8, is characterized in that, comprises the multiple bonding lines be coupling between described multiple conductive contact piece and described image sensor IC further.
10. an image sensor apparatus, is characterized in that, comprising:
Interconnection layer, has the opening extending through described interconnection layer;
Image sensor IC, is arranged in described opening, and has image-sensing surface;
Infrared light filter, aims at described image-sensing surface;
Lens subassembly, with described infrared light filter alignment;
Encapsulating material, laterally around described image sensor IC, and fills described opening, and described encapsulating material extends through the described interconnection layer relative with described image-sensing surface, limits flange part; And
Flexible interconnect layer, be coupled to the described interconnection layer relative with described image-sensing surface, described flexible interconnect layer has the opening being arranged in described flexible interconnect layer, and the opening of described flexible interconnect layer is aimed at described flange part.
11. image sensor apparatus according to claim 10, is characterized in that, described flexible interconnect layer comprises: flexible substrate, from the outside horizontal expansion of described interconnection layer; Multiple conductive trace, is positioned in described flexible substrate; And connector, carried by described flexible substrate, and be coupled to described multiple conductive trace.
12. image sensor apparatus according to claim 10, is characterized in that, comprise the adhesive layer between described interconnection layer and described lens subassembly further.
13. image sensor apparatus according to claim 10, is characterized in that, described image sensor IC comprises multiple conductive bond pads of Semiconductor substrate and contiguous described image-sensing surface.
14. image sensor apparatus according to claim 10, is characterized in that, comprise electronic unit further, and described electronic unit is arranged in described encapsulating material and is coupled to described interconnection layer.
15. image sensor apparatus according to claim 10, is characterized in that, described interconnection layer comprises the multiple conductive trace being arranged in described interconnection layer and the multiple conductive contact pieces being coupled respectively to described multiple conductive trace.
CN201420589966.9U 2014-10-11 2014-10-11 A kind of image sensor apparatus Active CN204243042U (en)

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Application Number Priority Date Filing Date Title
CN201420589966.9U CN204243042U (en) 2014-10-11 2014-10-11 A kind of image sensor apparatus

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Application Number Priority Date Filing Date Title
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