CN203300650U - Image sensor device - Google Patents

Image sensor device Download PDF

Info

Publication number
CN203300650U
CN203300650U CN2012207537663U CN201220753766U CN203300650U CN 203300650 U CN203300650 U CN 203300650U CN 2012207537663 U CN2012207537663 U CN 2012207537663U CN 201220753766 U CN201220753766 U CN 201220753766U CN 203300650 U CN203300650 U CN 203300650U
Authority
CN
China
Prior art keywords
image sensor
sensor apparatus
adjacent
encapsulating material
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2012207537663U
Other languages
Chinese (zh)
Inventor
栾竟恩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Shenzhen R&D Co Ltd
Original Assignee
STMicroelectronics Shenzhen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Shenzhen Manufacturing Co Ltd filed Critical STMicroelectronics Shenzhen Manufacturing Co Ltd
Priority to CN2012207537663U priority Critical patent/CN203300650U/en
Application granted granted Critical
Publication of CN203300650U publication Critical patent/CN203300650U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Abstract

The embodiment of the utility model relates to an image sensor device. The image sensor device may comprise an interconnecting layer, an image sensor IC which is adjacent to the interconnecting layer and is provided with an image sensing surface, and a dielectric layer which is adjacent to the image sensor IC and is provided with an opening which is aligned with the image sensing surface. The image sensor device further comprises an IR light filter which is adjacent to and is aligned with the image sensing surface, and a packaging material of which one side surface surrounds the IR light filter, wherein the packaging material is adjacent to the dielectric layer.

Description

Image sensor apparatus
Technical field
Present disclosure relates to the field of electronic equipment, and more specifically relates to imageing sensor.
Background technology
The typical case, electronic equipment comprises the camera model of one or more media functions be used to enhancing is provided.For example, typical electronic equipment can obtain camera model and video conference call for photograph.In the electronic equipment that typically has a plurality of camera models, principal phase machine module has high picture element density and adjustable focus lens system, and time camera model is preposition and has low picture element density simultaneously.And inferior camera model also has the fixed focus lenses system.
U.S. Patent application No.2009/0057544 such as the assignee's who transfers the application people such as Brodie discloses a kind of camera model for mobile device.This camera model comprises housing and the lens cover on these lens and housing of lens, carrying lens.This camera model comprises for the lens barrel mechanism of adjusting lens.During the manufacturing of the electronic equipment that comprises one or more camera models, particularly in large-scale production hope in service, make as quickly as possible this electronic equipment.
Typical camera model is made in the multi-step process.The first step comprises that semiconductor processes is to provide image sensor IC (IC).Next step comprises the test for some forms of image sensor IC and encapsulation.Image sensor IC can be assembled in camera model together with lens and removable lens barrel (if necessary).Can be manually or carry out this assembling of camera model via machine.For example in the electronic equipment that uses surface-mounted assembly, mounting (PNP) machine can be assembled into this assembly on printed circuit board (PCB) (PCB).The shortcoming of this single encapsulation be its may be relative poor efficiency and may need to test separately each equipment, increase manufacturing time.
In some applications, image sensor IC is fabricated to comprises that infrared (IR) filter eyeglass is useful.In a method, the IR filter glass is attached on image sensor IC.A potential defect of the method is possible increase the general thickness of equipment, and this may be undesirable for close-fitting mobile application.
, with reference to figure 1, shown the method for image sensor apparatus 20.Image sensor apparatus 20 exemplarily comprises interconnection layer 21, the adhesive linkage 29 between image sensor IC 22, image sensor IC and interconnection layer on interconnection layer and a plurality of closing line 23a-23b for image sensor IC being coupled to interconnection layer.Image sensor apparatus 20 exemplarily comprises filter holder 25, the IR filter 26 on filter holder and at filter holder and the direct adhesive linkage 24 of interconnection layer 21.Image sensor apparatus 20 also exemplarily is included in the lens module 27 on IR filter 26 and is used for the adhesive linkage 72 that lens module and filter holder 25 are coupled.Interconnection layer 21 exemplarily comprises a plurality of contacts 71.Image sensor apparatus 20 exemplarily is included in another adhesive linkage 73 between IR filter 26 and filter holder 25.
The utility model content
In view of the background of preamble, so a purpose of present disclosure is to provide a kind of image sensor apparatus with image acquisition resolution of low-key profile attitude and increase.
Provide this and other purpose, feature and advantage according to present disclosure, this image sensor apparatus can comprise interconnection layer, adjacent with this interconnection layer and have an image sensor IC on image sensing surface and adjacent with image sensor IC and have therein at least one dielectric layer with the opening of this image sensing surface in alignment by a kind of like this image sensor apparatus.This image sensor apparatus can also comprise and the IR filter that align adjacent with this image sensing surface and and side adjacent with this at least one dielectric layer encapsulating material around this IR filter.This image sensor apparatus can advantageously have less profile and easily make.
This image sensor apparatus can also comprise lens accessory adjacent with this encapsulating material and that align with this IR filter.This encapsulating material can comprise a plurality of conductive vias that extend past wherein and be coupled to this lens accessory.
More specifically, this image sensor IC a plurality of conductive vias that can comprise Semiconductor substrate and extend past this Semiconductor substrate.This image sensor apparatus can also be included in the adhesive linkage between this image sensor IC and this at least one dielectric layer.This adhesive linkage can comprise the electric conducting material part that is coupled at least one conductive via in these a plurality of conductive vias.
This at least one dielectric layer can be included at least one conductive via wherein, and this image sensor apparatus can also be included in this encapsulating material and be coupled to the capacitor of this at least one conductive via.
In some embodiments, this image sensor IC can be included in the lip-deep a plurality of lenticules of this image sensing.This interconnection layer can comprise a plurality of conductive vias through this interconnection layer, and this image sensor IC can also comprise a plurality of contacts of being coupled to respectively these a plurality of conductive vias.These a plurality of contacts can comprise for example a plurality of ball grid array contact.
Another aspect of present disclosure provides a kind of image sensor apparatus.This image sensor apparatus comprises: interconnection layer; Adjacent with described interconnection layer and comprise image sensing surface and at the lip-deep a plurality of lenticular image sensor IC IC of described image sensing; Adjacent with described image sensor IC and have therein at least one dielectric layer with the opening of described image sensing surface in alignment; Adjacent with described image sensing surface and align infrared IR filter; And side adjacent with described at least one dielectric layer is around the encapsulating material of described IR filter; And lens accessory adjacent with described encapsulating material and that align with described IR filter.
Description of drawings
Fig. 1 is the cross-sectional view according to the image sensor apparatus of prior art.
Fig. 2 is the cross-sectional view according to the image sensor apparatus of present disclosure.
Fig. 3 is the vertical view of image sensor apparatus that there is no Fig. 1 of lens accessory.
Fig. 4 is the bottom view of the image sensor apparatus of Fig. 1.
Fig. 5 is the cross-sectional view according to another execution mode of the image sensor apparatus of present disclosure.
Fig. 6 is the bottom view of the image sensor apparatus of Fig. 5.
Fig. 7 is the cross-sectional view according to another execution mode of the image sensor apparatus 7-7 along the line of present disclosure.
Fig. 8 is the bottom view of the image sensor apparatus of Fig. 7.
Fig. 9 is the bottom view according to another execution mode of the image sensor apparatus of present disclosure.
Figure 10-Figure 18 is the step cross-sectional view that is used to form the image sensor apparatus of Fig. 2.
Embodiment
Hereinafter with reference to accompanying drawing, more completely describe present disclosure, wherein shown in the accompanying drawings the execution mode of present disclosure.But these execution modes can multi-formly be realized and should not be construed as limited to execution mode as herein described with many.On the contrary, provide these examples so that present disclosure will be thorough and complete, and will express all sidedly the scope of present disclosure to those skilled in the art.Run through in full, identical Reference numeral relates to identical element, and indicates similar element with skimming mark in interchangeable execution mode.
At first with reference to figure 2-Fig. 4, the image sensor apparatus 30 according to present disclosure is described now.Shown in image sensor apparatus 30 is exemplary comprises interconnection layer 31, adjacent with interconnection layer and have the image sensor IC 33 on image sensing surface 61, and adjacent with image sensor IC and have therein a dielectric layer 41 with the opening of image sensing surface in alignment.
Dielectric layer 41 exemplarily is included in conductive via 42 wherein.Image sensor apparatus 30 exemplarily is included in encapsulating material 43 and is electrically coupled to the capacitor 44 of the conductive via 42 in dielectric layer 41.This conductive via 42 has the contact, side of exposure, is used for being provided to the quick connection of other assemblies.
Image sensor apparatus 30 exemplarily comprise and the IR filter 45 that with it align adjacent with image sensing surface 61 and on dielectric layer 41 and side around the encapsulating material 43 of IR filter.The upper surface flush of encapsulating material 43 and IR filter 45.IR filter 45 can comprise the mirror plate layers that has the IR coating thereon.Image sensor apparatus 30 comprises lens accessory 47 adjacent with encapsulating material 43 and that align with IR filter 45, and the adhesive linkage between lens module and encapsulating material 46.Lens module 47 exemplarily comprises housing 62, by the lens barrel 48 of housing carrying and by a plurality of lens 51a-51b of lens barrel carrying.Housing 62 can comprise the lens actuator (not shown) for the position of adjusting lens barrel 48.
More specifically, image sensor IC 33 exemplarily comprises Semiconductor substrate 35 (for example silicon through hole (TSV) substrate), the conductive via 34a-34b of a plurality of its extensions of process and a plurality of contact 39a-39b that are coupled to conductive via.In illustrated embodiment, image sensor IC 33 is included in a plurality of lenticule 36a-36b on image sensing surface 61.
Image sensor apparatus 30 exemplarily is included in the adhesive linkage 37 between image sensor IC 33 and dielectric layer 41.The depression that adhesive linkage 37 exemplarily is included in wherein surely to be had and have electric conducting material part 38 (for example conduction group).Electric conducting material part 38 is passed a plurality of conductive vias contact 34b separately and is coupled to one of them conductive via 34b.Interconnection layer 31 exemplarily comprise a plurality of processes itself and be coupled to conductive via (liner, the log in contact) 32a-32b of a plurality of conductive via 34a-34b of image sensor IC 33.
Image sensor apparatus 30 can advantageously provide the camera model that has identical size with image sensor IC 33.This execution mode has been removed the typical closing line of prior art, thereby has compressed the size of equipment and improved reliability.Particularly, how much not wider the lateral dimension of image sensor apparatus 30 is than the lateral dimension of image sensor IC.And the space between imaging surface 61 and conductive via 32a-32b can be less than 50 μ m, rather than prior art equipment＞300 μ m.Image sensor apparatus 30 can provide integrated electromagnetic shield and embedded passive equipment.
With reference now to Fig. 5-Fig. 6, carry out 30 ' another execution mode of Description Image sensor device.In this execution mode of 30 ' of image sensor apparatus, those elements of having described about Fig. 2-Fig. 4 be given upper slash mark and here major part do not need further discussion.The difference of this execution mode and former execution mode is that image sensor apparatus 30 ' also comprises a plurality of contact 52a ' that are coupled to respectively a plurality of conductive via 32a '-32b '-52b '.For example in illustrated embodiment, a plurality of contact 52a '-52b ' comprises a plurality of ball grid array contact, but in other embodiments, can use other contact types.In this embodiment, 30 ' of image sensor apparatus can also provide and have solder sphere/the refluxed camera model of welding group etc.
With reference now to Fig. 7-Fig. 8 come the Description Image sensor device 30 " another execution mode.Image sensor apparatus 30 " this execution mode in, those elements of having described about Fig. 2-4 be given two upper skim marks and here major part do not need further discussion.The difference of this execution mode and former execution mode be image sensor apparatus 30 " also comprise encapsulating material 43 ", encapsulating material 43 " comprise a plurality of conductive via 54a that extend past wherein and be coupled to lens accessory (not shown) "-54b ".Conductive via 54a "-54b " can be formed for being coupled to electromagnetic shielding or be connected to the liner of the actuator (for example autofocus, convergent-divergent) in lens accessory 47.
With reference now to Fig. 9 come the Description Image sensor device 30 ' " another execution mode.Image sensor apparatus 30 ' " this execution mode in, those elements of having described about Fig. 2-Fig. 4 be given triple upper slash marks and here major part do not need further discussion.The difference of this execution mode and former execution mode is to extend past encapsulating material 43 ' " a plurality of conductive via 54a ' "-54b ' " be rectangle and larger surface contact is provided.
With reference now to Figure 10-Figure 18, a kind of method for the manufacture of image sensor apparatus 30 is described.The method comprises formation interconnection layer 31; Place adjacent with interconnection layer and have the image sensor IC 33 on image sensing surface; And formation is adjacent with image sensor IC and have therein at least one dielectric layer 41 of the opening that aligns with image sensing surface 61.The method can comprise places IR filter 45 adjacent with image sensing surface 61 and that align; And form and should lack the encapsulating material 43 of the adjacent and side of dielectric layer 41 around the IR filter.
Particularly, in wafer layer, carry out this process, thereby effective manufacture process is provided.In illustrated embodiment, only make 3 image sensor apparatus 30, but will recognize easily that using wafer layer to process can make more image sensor apparatus 30 simultaneously.The method exemplarily comprises provides carrier layer 55 (for example mirror plate layers) and adhesive linkage thereon 56.The method exemplarily is included on adhesive linkage 56 places IR filter 45 and capacitor 44.The method exemplarily comprises and encapsulating material 43 is formed covering capacitor 44 and around IR filter 45.The method exemplarily comprises the conductive via 42 that forms in dielectric layer 41 and dielectric layer 41, and forms adhesive linkage 37 on dielectric layer.The method also is included in each depression that limits in adhesive linkage 37 and forms electric conducting material part 38.The method exemplarily comprises the wafer 57 that comprises a plurality of image sensor ICs 33 is placed on adhesive linkage 37, and form interconnection layer 31 on the back side of image sensor IC wafer.The method can comprise the thickness of the substrate 35 of the wafer 57 of milling, and forms therein heavy Distribution Layer.Method also exemplarily comprises uses saw 58 to cut apart image sensor IC 30.After cutting apart, the method exemplarily is included on encapsulating material 43 and forms adhesive linkage 46, and prevents lens accessory 47 on adhesive linkage.
The those skilled in the art that benefit from the instruction that provides in aforementioned specification and associated drawings will easily expect many improvement and other execution modes of present disclosure.Therefore, be appreciated that present disclosure is not limited to disclosed embodiment, this modification and execution mode intention are included in the scope of claims.

Claims (15)

1. an image sensor apparatus, is characterized in that, comprising:
Interconnection layer;
Adjacent with described interconnection layer and have an image sensor IC IC on image sensing surface;
Adjacent with described image sensor IC and have therein at least one dielectric layer with the opening of described image sensing surface in alignment;
Adjacent with described image sensing surface and align infrared IR filter; And
And side adjacent with described at least one dielectric layer is around the encapsulating material of described IR filter.
2. image sensor apparatus as claimed in claim 1, is characterized in that, also comprises lens accessory adjacent with described encapsulating material and that align with described IR filter.
3. image sensor apparatus as claimed in claim 2, is characterized in that, described encapsulating material comprises a plurality of conductive vias that extend past described encapsulating material and be coupled to described lens accessory.
4. image sensor apparatus as claimed in claim 1, is characterized in that, a plurality of conductive vias that described image sensor IC comprises Semiconductor substrate and extends past described Semiconductor substrate.
5. image sensor apparatus as claimed in claim 4, it is characterized in that, also be included in the adhesive linkage between described image sensor IC and described at least one dielectric layer, described adhesive linkage comprises the electric conducting material part that is coupled at least one conductive via in described a plurality of conductive via.
6. image sensor apparatus as claimed in claim 1, is characterized in that, described at least one dielectric layer is included at least one conductive via wherein; And be included in described encapsulating material and be coupled to the capacitor of described at least one conductive via.
7. image sensor apparatus as claimed in claim 1, is characterized in that, described image sensor IC is included in the lip-deep a plurality of lenticules of described image sensing.
8. image sensor apparatus as claimed in claim 1, is characterized in that, described interconnection layer comprises a plurality of conductive vias through described interconnection layer, and comprise a plurality of contacts of being coupled to respectively described a plurality of conductive vias.
9. image sensor apparatus as claimed in claim 8, is characterized in that, described a plurality of contacts comprise a plurality of ball grid array contact.
10. an image sensor apparatus, is characterized in that, comprising:
Interconnection layer;
Adjacent with described interconnection layer and comprise image sensing surface and at the lip-deep a plurality of lenticular image sensor IC IC of described image sensing;
Adjacent with described image sensor IC and have therein at least one dielectric layer with the opening of described image sensing surface in alignment;
Adjacent with described image sensing surface and align infrared IR filter;
And side adjacent with described at least one dielectric layer is around the encapsulating material of described IR filter; And
Lens accessory adjacent with described encapsulating material and that align with described IR filter.
11. image sensor apparatus as claimed in claim 10, is characterized in that, described encapsulating material comprises a plurality of conductive vias that extend past described encapsulating material and be coupled to described lens accessory.
12. image sensor apparatus as claimed in claim 10, is characterized in that, a plurality of conductive vias that described image sensor IC comprises Semiconductor substrate and extends past described Semiconductor substrate.
13. image sensor apparatus as claimed in claim 12, it is characterized in that, also be included in the adhesive linkage between described image sensor IC and described at least one dielectric layer, described adhesive linkage comprises the electric conducting material part that is coupled at least one conductive via in described a plurality of conductive via.
14. image sensor apparatus as claimed in claim 10, is characterized in that, described at least one dielectric layer is included at least one conductive via wherein; And be included in described encapsulating material and be coupled to the capacitor of described at least one conductive via.
15. image sensor apparatus as claimed in claim 10, is characterized in that, described interconnection layer comprises a plurality of conductive vias through described interconnection layer, and comprises a plurality of contacts of being coupled to respectively described a plurality of conductive vias.
CN2012207537663U 2012-12-31 2012-12-31 Image sensor device Expired - Lifetime CN203300650U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2012207537663U CN203300650U (en) 2012-12-31 2012-12-31 Image sensor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2012207537663U CN203300650U (en) 2012-12-31 2012-12-31 Image sensor device

Publications (1)

Publication Number Publication Date
CN203300650U true CN203300650U (en) 2013-11-20

Family

ID=49576642

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012207537663U Expired - Lifetime CN203300650U (en) 2012-12-31 2012-12-31 Image sensor device

Country Status (1)

Country Link
CN (1) CN203300650U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103915454A (en) * 2012-12-31 2014-07-09 意法半导体制造(深圳)有限公司 Image sensor device with aligned IR optical filter and dielectric layer and corresponding method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103915454A (en) * 2012-12-31 2014-07-09 意法半导体制造(深圳)有限公司 Image sensor device with aligned IR optical filter and dielectric layer and corresponding method
CN103915454B (en) * 2012-12-31 2017-02-08 意法半导体研发(深圳)有限公司 Image sensor device with aligned IR optical filter and dielectric layer and corresponding method

Similar Documents

Publication Publication Date Title
CN103915454A (en) Image sensor device with aligned IR optical filter and dielectric layer and corresponding method
US8890269B2 (en) Optical sensor package with through vias
CN102577644B (en) With wafer level camera module and the manufacture method of molding outer casing
JP6054344B2 (en) Mounting wafer level optics
CN101730863B (en) Small form factor modules using wafer level optics with bottom cavity and flip chip assembly
US7539412B2 (en) Camera module with first and second image sensor chips, holders and lens
CN205545517U (en) Image sensor device
US10326039B2 (en) Proximity detector device with interconnect layers and related methods
KR20160108664A (en) semiconductor package and method for manufacturing of the same
JP2013516656A (en) Camera module with molded tape flip chip imaging device mounting and manufacturing method
CN103338622A (en) Camera module housing having molded tape substrate with folded leads
US20070292127A1 (en) Small form factor camera module with lens barrel and image sensor
CN102132411A (en) Image sensor
JP2009533867A (en) Method of installing a protective cover on an image pickup apparatus and apparatus manufactured by the method
CN105489619B (en) Image sensor apparatus and correlation technique with flexible interconnection layer
JP2009533867A5 (en)
US20140103476A1 (en) Method for making image sensors using wafer-level processing and associated devices
US9059058B2 (en) Image sensor device with IR filter and related methods
CN203300650U (en) Image sensor device
US10804305B2 (en) Manufacture of semiconductor module with dual molding
TWI555398B (en) Camera Module And Method For Fabricating The Same
CN204243042U (en) A kind of image sensor apparatus
TWI427779B (en) Image sensor package, manufacturing method thereof and camera module
CN103715208A (en) Imaging device having bonding filling opening and related method

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: ST SEMICONDUCTOR DESIGN AND APPLICATION CO., LTD.

Free format text: FORMER OWNER: STMICROELECTRONICS MANUFACTURING (SHENZHEN) CO., LTD.

Effective date: 20140701

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: 518116 SHENZHEN, GUANGDONG PROVINCE TO: 518057 SHENZHEN, GUANGDONG PROVINCE

TR01 Transfer of patent right

Effective date of registration: 20140701

Address after: 518057 SKYWORTH building, South Zone, hi tech Zone, Nanshan District Science Park, Guangdong, Shenzhen

Patentee after: STMicroelectronics (Shenzhen) R&D Co.,Ltd.

Address before: 12 No. 518116 Guangdong province Shenzhen Longgang District Baolong Industrial City hi tech Avenue

Patentee before: STMICROELECTRONICS (SHENZHEN) R&D Co.,Ltd.

CP02 Change in the address of a patent holder

Address after: 5 / F East B501, South B502, North B503, 6th floor, block B, TCL Industrial Research Institute building, No. 006, Gaoxin South 1st Road, Nanshan District, Shenzhen City, Guangdong Province

Patentee after: STMicroelectronics (Shenzhen) R&D Co.,Ltd.

Address before: 518057 SKYWORTH building, South Zone, hi tech Zone, Nanshan District Science Park, Guangdong, Shenzhen

Patentee before: STMicroelectronics (Shenzhen) R&D Co.,Ltd.

CP02 Change in the address of a patent holder
CX01 Expiry of patent term

Granted publication date: 20131120

CX01 Expiry of patent term