CN204216401U - A kind of semiconductor laser - Google Patents
A kind of semiconductor laser Download PDFInfo
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- CN204216401U CN204216401U CN201420667978.9U CN201420667978U CN204216401U CN 204216401 U CN204216401 U CN 204216401U CN 201420667978 U CN201420667978 U CN 201420667978U CN 204216401 U CN204216401 U CN 204216401U
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- semiconductor laser
- battle array
- folds
- laser
- light
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Abstract
A kind of semiconductor laser, comprising: light-emitting device and focusing arrangement, between described light-emitting device and described focusing arrangement, is provided with equal electro-optical device; Described equal electro-optical device exports described focusing arrangement to after being used for the light beam adjustment sent by described light-emitting device; Described equal electro-optical device comprises: grating mirror, at least one level crossing and collimating lens; Described grating mirror, described level crossing and described collimating lens are placed successively.The utility model, by adding equal electro-optical device, can carry out all light process by the laser beam after involutory bundle, will close the Quality advance of the laser beam after bundle.
Description
Technical field
The utility model belongs to semiconductor laser technology, particularly relates to a kind of semiconductor laser.
Background technology
In recent years, along with the raising of the Performance And Reliability of semiconductor laser, the application of semiconductor laser has penetrated into every subjects field, defines a huge application network and covers.
In order to obtain output high-power laser beam source, usually adopt polarization coupling technology that multiple laser Shu Jinhang is closed bundle, obtain this high power laser light light source beam, at present, swash combiner technology and generally adopt crystal polarizing prism, this lens damage threshold value is low, be not suitable for applying in high power density situation, and the high-power laser beam after polarization coupling meets processing request in power output, but due to semiconductor laser self structure problem, cause its beam quality poor.
Utility model content
In view of this, the utility model is to provide a kind of semiconductor laser, to solve the problem of the laser beam quality difference in above-mentioned prior art after involutory bundle.
For solving the problem, the utility model provides a kind of semiconductor laser, comprising: light-emitting device and focusing arrangement, between described light-emitting device and described focusing arrangement, is provided with equal electro-optical device; Described equal electro-optical device exports described focusing arrangement to after being used for the light beam adjustment sent by described light-emitting device; Described equal electro-optical device comprises: grating mirror, at least one level crossing and collimating lens; Described grating mirror, described level crossing and described collimating lens are placed successively.
Preferably, described focusing arrangement comprises: two lens.
Preferably, described light-emitting device comprises: first semiconductor laser launching horizontal laser beam folds battle array group; And at least one second semiconductor laser launching vertical laser beam folds battle array group; In the position that the light beam that described first semiconductor laser folds battle array group and the second semiconductor laser described at least one folds battle array group intersects, be respectively arranged with the first polarization beam combiner, described first semiconductor laser folded the light beam that battle array group and described second semiconductor laser fold battle array group and close bundle; Described equal electro-optical device is arranged on described conjunction on the laser beam after restrainting.
Preferably, the semiconductor laser launching horizontal laser beam described in is folded battle array group and is comprised: first semiconductor laser launching horizontal laser beam folds battle array; At least one second semiconductor laser launching vertical laser beam folds battle array; In the position that the light beam that described first semiconductor laser folds battle array and the second semiconductor laser described at least one folds battle array intersects, be respectively arranged with the second polarization beam combiner, described first semiconductor laser folded the light beam that battle array and described second semiconductor laser fold battle array and close bundle.
Preferably, the semiconductor launching vertical laser beam described in is folded battle array group and is comprised: the 3rd semiconductor laser launching horizontal laser beam folds battle array; At least one the 4th semiconductor laser launching vertical laser beam folds battle array; In the position that the light beam that described 3rd semiconductor laser folds battle array and the 4th semiconductor laser described at least one folds battle array intersects, be respectively arranged with the 3rd polarization beam combiner, described 3rd semiconductor laser folded the light beam that battle array and described 4th semiconductor laser fold battle array and close bundle.
Preferably, described first polarization beam combiner, described second polarization beam combiner and described 3rd polarization beam combiner are film interference type polarizing beam splitter mirror.
Preferably, it is identical with the structure that described 4th semiconductor laser folds battle array that described first semiconductor laser folds battle array, described second semiconductor laser folds battle array, described 3rd semiconductor laser folds battle array, all clings to bar by laminated multi-layer semiconductor laser together and form.
Preferably, fold battle array at described first semiconductor laser, described second semiconductor laser folds battle array, described 3rd semiconductor laser folds battle array and described 4th semiconductor laser folds battle array radiating laser beams port is respectively arranged with protecting window mirror.
Preferably, half-wave plate is provided with after quiet and/or described 4th semiconductor laser of the protecting window folding battle array place at described first semiconductor laser folds the protecting window mirror at battle array place.
Semiconductor laser in the utility model, has the following advantages:
1, add equal electro-optical device and can carry out all light process by the laser beam after involutory bundle, improve the quality of the laser beam after closing bundle.
figure of description
The structural representation of Fig. 1 semiconductor laser;
Fig. 2 semiconductor laser folds battle array group structural representation.
Embodiment
The following description and drawings illustrate specific embodiments of the present utility model fully, to enable those skilled in the art to put into practice them.Other embodiments can comprise logic, logical order and other change.Embodiment only represents possible change.Unless explicitly requested, otherwise independent step and function are optional, and the order of operation can change.The part of some embodiments and feature can be included in or replace part and the feature of other embodiments.The scope of embodiment of the present utility model comprises the gamut of claims, and all obtainable equivalent of claims, and if in fact disclose the utility model more than, be not the scope that automatically will limit this application be any single utility model or utility model design.
The structural representation of the semiconductor laser in some illustrative embodiment is shown referring now to Fig. 1, Fig. 1.
As shown in Figure 1, disclose a kind of semiconductor laser, comprising: light-emitting device 1 and focusing arrangement 2, between described light-emitting device 1 and described focusing arrangement 2, be provided with equal electro-optical device 3; Described equal electro-optical device 3 exports described focusing arrangement 2 to after adjusting for the light beam sent by described light-emitting device 1; Described equal electro-optical device 3 comprises: grating mirror 301, at least one level crossing 302 and collimating lens 303; Described grating mirror 301, described level crossing 302 and described collimating lens 303 are placed successively.
Wherein, equal electro-optical device 3 adopts a grating mirror 301, four level crossings 302 and a collimating lens 303; Described grating mirror, described four level crossings and described collimating lens are placed successively, reach the permutation and combination of grating mirror-level crossing-level crossing-level crossing-level crossing-collimating lens.
All light process can be carried out by laser beam after involutory bundle by adding equal electro-optical device, improving the quality of the laser beam after closing bundle.
Further, described focusing arrangement comprises: two lens.
Preferably, through particular design that is long to Jiao of described two lens and position of getting along, it be 12 × 2mm2 and operating distance is the feature of 300mm that the laser beam after focusing has required spot size.
Further, described light-emitting device 1 comprises: first semiconductor laser launching horizontal laser beam folds battle array group 101; And at least one second semiconductor laser launching vertical laser beam folds battle array group 102; In the position that the light beam that described first semiconductor laser folds battle array group 101 and the second semiconductor laser described at least one folds battle array group 102 intersects, be respectively arranged with the first polarization beam combiner 4, described first semiconductor laser folded the light beam that battle array group 101 and described second semiconductor laser fold battle array group 102 and close bundle; Described equal electro-optical device 3 is arranged on described conjunction on the laser beam after restrainting.
Further, the semiconductor laser launching horizontal laser beam described in is folded battle array group 101 and is comprised: first semiconductor laser launching horizontal laser beam folds battle array 101a; At least one second semiconductor laser launching vertical laser beam folds battle array 101b; In the position that the light beam that described first semiconductor laser folds battle array and the second semiconductor laser described at least one folds battle array intersects, be respectively arranged with the second polarization beam combiner 5, described first semiconductor laser folded the light beam that gust 101a and described second semiconductor laser fold gust 101b and close bundle.
Further, the semiconductor launching vertical laser beam described in is folded battle array group 102 and is comprised: the 3rd semiconductor laser launching horizontal laser beam folds battle array 102a; At least one the 4th semiconductor laser launching vertical laser beam folds battle array 102b; In the position that the light beam that described 3rd semiconductor laser folds gust 102a and the 4th semiconductor laser described at least one folds gust 102b intersects, be respectively arranged with the 3rd polarization beam combiner 5, described 3rd semiconductor laser folded the light beam that gust 102a and described 4th semiconductor laser fold gust 102b and close bundle.
Further, described first polarization beam combiner 4, described second polarization beam combiner 5 and described 3rd polarization beam combiner 6 are film interference type polarizing beam splitter mirror.
Further, it is identical with the structure that described 4th semiconductor laser folds gust 102b that described first semiconductor laser folds a gust 101a, described second semiconductor laser folds a gust 101b, described 3rd semiconductor laser folds gust 102a, all by laminated multi-layer semiconductor laser plate together, equal light device, and a condenser lens composition.
Wherein, every layer of semiconductor laser plate clings to bar, fast axis collimation mirror and slow axis collimating mirror by semiconductor laser and forms;
Preferably, described semiconductor laser bar bar is micro-channel heat sink structure, also with cooling fluid water inlet penetrating up and down and cooling fluid discharge outlet, there is laser chip at described semiconductor laser bar bar away from one end of cooling fluid water inlet; Described fast axis collimation mirror is arranged on one end that semiconductor laser bar bar exists described laser chip; After described slow axis collimating mirror is arranged on described fast axis collimation mirror; After the slow axis collimating mirror of the semiconductor laser plate after stacking described in described all light device is arranged on; After described condenser lens is arranged on described all light device;
Preferably, described laser chip is encapsulated by tens or tens single-tube laser integrated chips and forms;
Preferably, described fast axis collimation mirror is aspheric surface cylindrical mirror, and described slow axis collimating mirror is sphere cylindrical mirror;
Preferably, described cooling water is deionized water, and granularity is less than 5um.
Further, fold battle array at described first semiconductor laser, described second semiconductor laser folds battle array, described 3rd semiconductor laser folds battle array and described 4th semiconductor laser folds battle array radiating laser beams port is respectively arranged with protecting window mirror 7.
Further, half-wave plate 8 is provided with after the protecting window quiet 7 folding battle array place at described first semiconductor laser and/or described 4th semiconductor laser fold the protecting window mirror 7 at battle array place.
Further, described semiconductor laser, also comprise: fold battle array place at each semiconductor laser and be provided with temperature sensor and humidity sensor, the temperature and humidity data for described each semiconductor laser being folded battle array send the parametric controller of the described semiconductor laser outside controlling described power source of semiconductor laser to.
Further, in described semiconductor laser, drier is placed with.
The explanation of above embodiment just understands method of the present utility model and core concept thereof for helping; Meanwhile, for one of ordinary skill in the art, according to thought of the present utility model, all will change in specific embodiments and applications, in sum, this description should not be construed as restriction of the present utility model.
Claims (9)
1. a semiconductor laser, comprising: light-emitting device and focusing arrangement, is characterized in that, between described light-emitting device and described focusing arrangement, is provided with equal electro-optical device; Described equal electro-optical device exports described focusing arrangement to after being used for the light beam adjustment sent by described light-emitting device;
Described equal electro-optical device comprises: grating mirror, at least one level crossing and collimating lens;
Described grating mirror, described level crossing and described collimating lens are placed successively.
2. semiconductor laser according to claim 1, it is characterized in that, described focusing arrangement comprises: two lens.
3. semiconductor laser according to claim 2, it is characterized in that, described light-emitting device comprises:
First semiconductor laser launching horizontal laser beam folds battle array group; And,
At least one second semiconductor laser launching vertical laser beam folds battle array group;
In the position that the light beam that described first semiconductor laser folds battle array group and the second semiconductor laser described at least one folds battle array group intersects, be respectively arranged with the first polarization beam combiner, described first semiconductor laser folded the light beam that battle array group and described second semiconductor laser fold battle array group and close bundle;
Described equal electro-optical device is arranged on described conjunction on the laser beam after restrainting.
4. semiconductor laser according to claim 3, is characterized in that, described in launch horizontal laser beam semiconductor laser fold battle array group and comprise:
First semiconductor laser launching horizontal laser beam folds battle array;
At least one second semiconductor laser launching vertical laser beam folds battle array;
In the position that the light beam that described first semiconductor laser folds battle array and the second semiconductor laser described at least one folds battle array intersects, be respectively arranged with the second polarization beam combiner, described first semiconductor laser folded the light beam that battle array and described second semiconductor laser fold battle array and close bundle.
5. semiconductor laser according to claim 4, is characterized in that, described in launch vertical laser beam semiconductor fold battle array group and comprise:
The 3rd semiconductor laser launching horizontal laser beam folds battle array;
At least one the 4th semiconductor laser launching vertical laser beam folds battle array;
In the position that the light beam that described 3rd semiconductor laser folds battle array and the 4th semiconductor laser described at least one folds battle array intersects, be respectively arranged with the 3rd polarization beam combiner, described 3rd semiconductor laser folded the light beam that battle array and described 4th semiconductor laser fold battle array and close bundle.
6. semiconductor laser according to claim 5, it is characterized in that, described first polarization beam combiner, described second polarization beam combiner and described 3rd polarization beam combiner are film interference type polarizing beam splitter mirror.
7. semiconductor laser according to claim 5 or 6, it is characterized in that, it is identical with the structure that described 4th semiconductor laser folds battle array that described first semiconductor laser folds battle array, described second semiconductor laser folds battle array, described 3rd semiconductor laser folds battle array, all clings to bar by laminated multi-layer semiconductor laser together and form.
8. semiconductor laser according to claim 5 or 6; it is characterized in that, fold battle array at described first semiconductor laser, described second semiconductor laser folds battle array, described 3rd semiconductor laser folds battle array and described 4th semiconductor laser folds battle array radiating laser beams port is respectively arranged with protecting window mirror.
9. semiconductor laser according to claim 8, is characterized in that, is provided with half-wave plate after quiet and/or described 4th semiconductor laser of the protecting window folding battle array place at described first semiconductor laser folds the protecting window mirror at battle array place.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420667978.9U CN204216401U (en) | 2014-11-11 | 2014-11-11 | A kind of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420667978.9U CN204216401U (en) | 2014-11-11 | 2014-11-11 | A kind of semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204216401U true CN204216401U (en) | 2015-03-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201420667978.9U Expired - Fee Related CN204216401U (en) | 2014-11-11 | 2014-11-11 | A kind of semiconductor laser |
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| CN (1) | CN204216401U (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112202047A (en) * | 2020-09-23 | 2021-01-08 | 广东粤港澳大湾区硬科技创新研究院 | Laser device |
| CN112615248A (en) * | 2020-12-23 | 2021-04-06 | 扬州扬芯激光技术有限公司 | Blue laser |
| US11391823B2 (en) | 2018-02-21 | 2022-07-19 | Innovusion, Inc. | LiDAR detection systems and methods with high repetition rate to observe far objects |
| US11422234B2 (en) | 2018-02-23 | 2022-08-23 | Innovusion, Inc. | Distributed lidar systems |
| US11579300B1 (en) | 2018-08-21 | 2023-02-14 | Innovusion, Inc. | Dual lens receive path for LiDAR system |
| US11927696B2 (en) * | 2018-02-21 | 2024-03-12 | Innovusion, Inc. | LiDAR systems with fiber optic coupling |
| US11953601B2 (en) | 2016-12-30 | 2024-04-09 | Seyond, Inc. | Multiwavelength lidar design |
-
2014
- 2014-11-11 CN CN201420667978.9U patent/CN204216401U/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11953601B2 (en) | 2016-12-30 | 2024-04-09 | Seyond, Inc. | Multiwavelength lidar design |
| US11391823B2 (en) | 2018-02-21 | 2022-07-19 | Innovusion, Inc. | LiDAR detection systems and methods with high repetition rate to observe far objects |
| US11782138B2 (en) | 2018-02-21 | 2023-10-10 | Innovusion, Inc. | LiDAR detection systems and methods with high repetition rate to observe far objects |
| US11927696B2 (en) * | 2018-02-21 | 2024-03-12 | Innovusion, Inc. | LiDAR systems with fiber optic coupling |
| US11422234B2 (en) | 2018-02-23 | 2022-08-23 | Innovusion, Inc. | Distributed lidar systems |
| US11579300B1 (en) | 2018-08-21 | 2023-02-14 | Innovusion, Inc. | Dual lens receive path for LiDAR system |
| CN112202047A (en) * | 2020-09-23 | 2021-01-08 | 广东粤港澳大湾区硬科技创新研究院 | Laser device |
| CN112615248A (en) * | 2020-12-23 | 2021-04-06 | 扬州扬芯激光技术有限公司 | Blue laser |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: SHANDONG ENERGY HEAVY EQUIPMENT GROUP DAZU REMANUF Free format text: FORMER NAME: SHANDONG ENERGY MACHINERY GROUP HAN'S REMANUFACTURING CO., LTD. |
|
| CP03 | Change of name, title or address |
Address after: 271200 Shandong city of Xintai province Tai'an City Xindong town new road three Patentee after: Shandong Manufacturing Co., Ltd again of energy refitting big nation of group Address before: Tai'an City, Shandong Province town of 271222 east of Xintai new road three Patentee before: Shandong Energy Machinery Group Dazu Remanufacturing Co.,Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150318 Termination date: 20191111 |
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| CF01 | Termination of patent right due to non-payment of annual fee |