CN204205012U - A kind of low pass filter that there is abrupt transition and improve stopband - Google Patents
A kind of low pass filter that there is abrupt transition and improve stopband Download PDFInfo
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- CN204205012U CN204205012U CN201420614193.5U CN201420614193U CN204205012U CN 204205012 U CN204205012 U CN 204205012U CN 201420614193 U CN201420614193 U CN 201420614193U CN 204205012 U CN204205012 U CN 204205012U
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Abstract
The utility model relates to a kind of low pass filter having abrupt transition and improve stopband, this filter comprises dielectric-slab, conduction band, complementary type rectangular aperture defected microstrip structure, open circuit minor matters, crestal line, ground plate and dumbbell shape defect ground structure, conduction band is arranged on the front of dielectric-slab, and ground plate is arranged on the back side of dielectric-slab; Complementary type rectangular aperture defected microstrip structure comprises the first complementary type rectangular aperture defected microstrip structure and the second complementary type rectangular aperture defected microstrip structure, first complementary type rectangular aperture defected microstrip structure and the second complementary type rectangular aperture defected microstrip structure are separately positioned on the both sides of conduction band, and open circuit minor matters comprise the first open circuit minor matters, the second open circuit minor matters and the 3rd open circuit minor matters; Crestal line comprises the first crestal line and the second crestal line; Dumbbell shape defect ground structure comprises the first dumbbell shape defect ground structure and the second dumbbell shape defect ground structure.Loss in the utility model passband is low, is easy to integrated with other planar microwave circuit.
Description
Technical field
The utility model belongs to technical field of micro communication, particularly relates to a kind of low pass filter having abrupt transition and improve stopband, can be applicable to the harmonic wave and the parasitic signal that suppress the circuit generations such as power amplifier, frequency mixer, oscillator.
Background technology
The harmonic wave that modern wireless communication systems suppresses the circuit such as power amplifier, frequency mixer, oscillator to produce in the urgent need to the low pass filter of abrupt transition and Wide stop bands and parasitic signal.Passband can ensure very high frequency selectivity to the abrupt transition of stopband, and wide stopband then can suppress the parasitic disturbances signal in broadband.Traditional micro-band forms filter can only provide the comparatively slow transition of passband to stopband and narrower bandwidth of rejection.In order to improve frequency selectivity and improve resistance band, often need the exponent number improving filter, but the rising of pass-band loss and the increase of device size can be brought thus.
Defect ground structure (Defected Ground Structure, DGS) be the defect pattern etching definite shape on the ground plate of planar transmission line, its maximum advantage has significant stopband and Slow-wave effect characteristic, this is because the defect on ground plate disturbs CURRENT DISTRIBUTION, result in the change of transmission line equivalent inductance and electric capacity.Because each DGS unit can produce a transmission zero, wide stopband can be realized by multiple DGS unit of cascade different length.But along with the increase of DGS unit, pass-band loss can increase thereupon, and significantly can rise in the radiation of high frequency treatment, be unfavorable for practical application.
As the extension of defect ground structure, defected microstrip structure (the Defected Microstrip Structure developed in recent years, DMS) be etch even or non-homogeneous slit on micro-band conduction band, there is significant stopband and Slow-wave effect equally, and there is less electromagnetic interference surface noise.The frequency response of defected microstrip structure is closely related with planform, be there is by exploitation the defected microstrip structure unit of abrupt transition and minimum pass-band loss, the resonant elements such as the defect ground structure of integrated use simultaneously, open circuit minor matters, can provide new means for having abrupt transition with the enforcement of the low pass filter improving stopband.
Summary of the invention
For the deficiency existed in the existing actualizing technology of low pass filter, the purpose of this utility model proposes a kind of low pass filter having abrupt transition and improve stopband, to solve the problems such as existing low-pass filter frequency selectivity is not high, stopband is narrower, pass-band loss is larger.
In order to realize above-mentioned object, the utility model have employed following technical scheme:
A kind of low pass filter that there is abrupt transition and improve stopband, this filter comprises dielectric-slab, conduction band, complementary type rectangular aperture defected microstrip structure, open circuit minor matters, crestal line, ground plate and dumbbell shape defect ground structure, conduction band is arranged on the front of dielectric-slab, and ground plate is arranged on the back side of dielectric-slab; Described complementary type rectangular aperture defected microstrip structure comprises the first complementary type rectangular aperture defected microstrip structure and the second complementary type rectangular aperture defected microstrip structure, first complementary type rectangular aperture defected microstrip structure and the second complementary type rectangular aperture defected microstrip structure are separately positioned on the both sides of conduction band, each complementary type rectangular aperture defected microstrip structure is made up of the contrary ring-like gap, inner side of two opening directions and outer ring groove part gap, and ring-like gap, inner side and outer ring groove part gap are formed by conduction band etching with one heart; Described open circuit minor matters comprise the first open circuit minor matters, the second open circuit minor matters and the 3rd open circuit minor matters, first open circuit minor matters are connected with the second open circuit minor matters the inner side being arranged on the first complementary type rectangular aperture defected microstrip structure and the second complementary type rectangular aperture defected microstrip structure respectively, and the 3rd described open circuit minor matters are positioned at the centre of conduction band; Described crestal line comprises the first crestal line and the second crestal line, first crestal line and the second crestal line are symmetrically set, first crestal line and the second crestal line are for starting point respectively with conduction band widthwise edges, formed by the curved slot etching 90 degree, first crestal line connection is arranged between the first open circuit minor matters and the 3rd open circuit minor matters, and the second crestal line connection is arranged between the second open circuit minor matters and the 3rd open circuit minor matters; Described dumbbell shape defect ground structure comprises the first dumbbell shape defect ground structure and the second dumbbell shape defect ground structure, first dumbbell shape defect ground structure and the second dumbbell shape defect ground structure are made up of two foursquare defects on ground plate and the gap slot that is connected these two defects respectively, and the first dumbbell shape defect ground structure and the second dumbbell shape defect ground structure lay respectively at the below of the first open circuit minor matters and the second open circuit minor matters.
As further improvement, described dielectric-slab dielectric constant is 2.55, and thickness is 1.5 mm, and the width of conduction band is 4.5 mm.
As further improvement, beyond the length of the division ring groove part gap of the first described complementary type rectangular aperture defected microstrip structure and the second complementary type rectangular aperture defected microstrip structure is unequal, other size is all identical.
As further improvement, the length of the outer ring groove part gap of the first described complementary type rectangular aperture defected microstrip structure is 8.0mm, and width is 3.6mm, the length in ring-like gap, inner side is 6.8mm, width is 2.4mm, and the length of opening is 0.6mm, and the spacing of interior outer ring groove part gap is 0.3mm; The length of the outer ring groove part gap of the second complementary type rectangular aperture defected microstrip structure is 6.3mm, and width is 3.6mm, and the length in ring-like gap, inner side is 5.1mm, and width is 2.4mm, and the length of opening is 0.6mm, and the spacing of interior outer ring groove part gap is 0.3mm.
As further improvement, the width of the first described open circuit minor matters is 4.2mm, and length is 8.8mm; The width of the second open circuit minor matters is 4.2mm, and length is 5.8mm; The width 10.2mm of the 3rd open circuit minor matters, length is 5.35mm.
As further improvement, the first described crestal line and the second crestal line are 4.1mm along the length in conduction band Width gap, and the length along conduction band length direction gap is 3.6mm, and the width in gap is 0.4mm.
As further improvement, in the first described dumbbell shape defect ground structure, the length of square defect is 2.3mm, the gap slot width connecting two square defects is 0.3mm, length is 5.0mm, in second dumbbell shape defect ground structure dumbbell shape defect ground structure, the length of square defect is 1.9mm, the gap slot width connecting two square defects is 0.3mm, and length is 5.0mm, and the center distance between the first dumbbell shape defect ground structure and the second dumbbell shape defect ground structure is 14.65mm.
Complementary type rectangular aperture defected microstrip structure of the present utility model has precipitous indicial response and minimum pass-band loss, can be changed the position of transmission zero by the size of adjustment structure.First and second transmission zeros produce to obtain passband to the abrupt transition of stopband and minimum pass-band loss by the first complementary type rectangular aperture defected microstrip structure of different size and the second complementary type rectangular aperture defected microstrip structure respectively.Third and fourth transmission zero is produced by first, second open circuit minor matters of different size respectively.And by first, second crestal line and the 3rd open circuit minor matters and dumbbell shape defect ground structure obtain wide stopband.
The low pass filter that the utility model proposes, take full advantage of remarkable stopband and the Slow-wave effect of defected microstrip structure and defect ground structure, there is the abrupt transition of passband to stopband, the resistance band of improvement, low-loss in passband, is easy to the advantage such as integrated with other planar microwave circuit.Meanwhile, front four transmission zeros of this low pass filter can distinguish free adjustment, for the design of device brings great convenience.
Accompanying drawing explanation
Fig. 1 is that the utility model has abrupt transition and improves the general structure schematic diagram of low pass filter of stopband.
Fig. 2 is that the utility model has abrupt transition and improves the Facad structure schematic diagram of low pass filter of stopband.
Fig. 3 is that the utility model has abrupt transition and improves the structure schematic diagram of low pass filter of stopband.
Fig. 4 be the utility model have abrupt transition and improve stopband low pass filter emulation frequency response results.
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model is made a detailed explanation.
A kind of low pass filter that there is abrupt transition and improve stopband as shown in Figure 1, this filter comprises dielectric-slab 1, conduction band 2, complementary type rectangular aperture defected microstrip structure, open circuit minor matters, crestal line, ground plate 10 and dumbbell shape defect ground structure, conduction band 2 is arranged on the front of dielectric-slab 1, and ground plate 10 is arranged on the back side of dielectric-slab 1.Described dielectric-slab 1 dielectric constant is 2.55, and thickness is 1.5 mm, and the width of conduction band 2 is 4.5 mm, to obtain the characteristic impedance of 50 Ω.
As shown in Figure 2, described complementary type rectangular aperture defected microstrip structure comprises the first complementary type rectangular aperture defected microstrip structure 3 and the second complementary type rectangular aperture defected microstrip structure 9, first complementary type rectangular aperture defected microstrip structure 3 and the second complementary type rectangular aperture defected microstrip structure 9 are separately positioned on the both sides of conduction band 2, each complementary type rectangular aperture defected microstrip structure is made up of the contrary ring-like gap 12, inner side of two opening directions and outer ring groove part gap 11, and ring-like gap 12, inner side and outer ring groove part gap 11 etch by conduction band 2 with one heart and formed.The length of the outer ring groove part gap 11 of the first complementary type rectangular aperture defected microstrip structure 3 is 8.0mm, width is 3.6mm, and the length in ring-like gap 12, inner side is 6.8mm, and width is 2.4mm, the length of opening 13 is 0.6mm, and the spacing of interior outer ring groove part gap 11 is 0.3mm.The length of the outer ring groove part gap 11 of the second complementary type rectangular aperture defected microstrip structure 9 is 6.3mm, width is 3.6mm, and the length in ring-like gap 12, inner side is 5.1mm, and width is 2.4mm, the length of opening 13 is 0.6mm, and the spacing of interior outer ring groove part gap 11 is 0.3mm.
As shown in Figure 2, described open circuit minor matters comprise the first open circuit minor matters 4, second open circuit minor matters 8 and the 3rd open circuit minor matters 6, first open circuit minor matters 4 are connected with the second open circuit minor matters 8 inner side being arranged on the first complementary type rectangular aperture defected microstrip structure 3 and the second complementary type rectangular aperture defected microstrip structure 9 respectively, and the 3rd described open circuit minor matters 6 are positioned at the centre of conduction band 2.The width of the first described open circuit minor matters 4 is 4.2mm, and length is 8.8mm; The width of the second open circuit minor matters 8 is 4.2mm, and length is 5.8mm; The width 10.2mm of the 3rd open circuit minor matters 6, length is 5.35mm.
Described crestal line comprises the first crestal line 5 and the second crestal line 7, first crestal line 5 and the second crestal line 7 are symmetrically set, first crestal line 5 and the second crestal line 7 are for starting point respectively with conduction band 2 widthwise edges, formed by the curved slot etching 90 degree, first crestal line 5 connection is arranged between the first open circuit minor matters 4 and the 3rd open circuit minor matters 6, and the second crestal line 7 connection is arranged between the second open circuit minor matters 8 and the 3rd open circuit minor matters 6.First crestal line 5 and the second crestal line 7 are 4.1mm along the length in conduction band 2 Width gap, and the length along conduction band 2 length direction gap is 3.6mm, and the width in gap is 0.4mm.
As shown in Figure 3, described dumbbell shape defect ground structure comprises the first dumbbell shape defect ground structure 14 and the second dumbbell shape defect ground structure 15, first dumbbell shape defect ground structure 14 and the second dumbbell shape defect ground structure 15 are made up of two foursquare defects on ground plate 10 and the gap slot that is connected these two defects respectively, and the first dumbbell shape defect ground structure 14 and the second dumbbell shape defect ground structure 15 lay respectively at the below of the first open circuit minor matters 4 and the second open circuit minor matters 8.In first dumbbell shape defect ground structure 14, the length of square defect is 2.3mm, the gap slot width connecting two square defects is 0.3mm, length is 5.0mm, in second dumbbell shape defect ground structure 15, the length of square defect is 1.9mm, the gap slot width connecting two square defects is 0.3mm, length is 5.0mm, and the center distance between the first dumbbell shape defect ground structure 14 and the second dumbbell shape defect ground structure 15 is 14.65mm.
The frequency response simulation result of this embodiment of the utility model as shown in Figure 4, comprise the S21(transmission coefficient of solid line) the S11(reflection coefficient of parameter and dotted line) parameter, wherein abscissa represents frequency component, and unit is GHz, ordinate represents amplitude variations, and unit is dB.This embodiment passband is that 0.33GHz(3dB and 39.8dB decay frequency lays respectively at 4.01GHz and 4.34GHz to the transition band width of stopband), He Ne laser degree is 111.5dB/GHz, the resistance band of 20dB is 4.25GHz to more than 15GHz, from direct current to 3.42GHz, Insertion Loss is less than 0.3dB, and the reflection coefficient in passband is substantially all better than-20dB.
Although be illustrated the utility model on the basis of above-described embodiment, but the utility model is not limited thereto, the people with association area background knowledge can carry out various deformation on this basis, such as adopts the defect ground structure of other form to obtain wide stopband.Therefore, these are out of shape and other meets thought of the present utility model or have employed the technical solution of the utility model, all should belong within protection range of the present utility model.
Claims (7)
1. the low pass filter that there is abrupt transition and improve stopband, this filter comprises dielectric-slab (1), conduction band (2), complementary type rectangular aperture defected microstrip structure, open circuit minor matters, crestal line, ground plate (10) and dumbbell shape defect ground structure, conduction band (2) is arranged on the front of dielectric-slab (1), and ground plate (10) is arranged on the back side of dielectric-slab (1), it is characterized in that: described complementary type rectangular aperture defected microstrip structure comprises the first complementary type rectangular aperture defected microstrip structure (3) and the second complementary type rectangular aperture defected microstrip structure (9), first complementary type rectangular aperture defected microstrip structure (3) and the second complementary type rectangular aperture defected microstrip structure (9) are separately positioned on the both sides of conduction band (2), each complementary type rectangular aperture defected microstrip structure is made up of the contrary ring-like gap, inner side (12) of two opening directions and outer ring groove part gap (11), ring-like gap, inner side (12) and outer ring groove part gap (11) are formed by conduction band (2) etching with one heart, described open circuit minor matters comprise the first open circuit minor matters (4), the second open circuit minor matters (8) and the 3rd open circuit minor matters (6), first open circuit minor matters (4) is connected with the second open circuit minor matters (8) inner side being arranged on the first complementary type rectangular aperture defected microstrip structure (3) and the second complementary type rectangular aperture defected microstrip structure (9) respectively, and the 3rd described open circuit minor matters (6) is positioned at the centre of conduction band (2), described crestal line comprises the first crestal line (5) and the second crestal line (7), first crestal line (5) and the second crestal line (7) are symmetrically set, first crestal line (5) and the second crestal line (7) are for starting point respectively with conduction band (2) widthwise edges, formed by the curved slot etching 90 degree, first crestal line (5) connection is arranged between the first open circuit minor matters (4) and the 3rd open circuit minor matters (6), and the second crestal line (7) connection is arranged between the second open circuit minor matters (8) and the 3rd open circuit minor matters (6), described dumbbell shape defect ground structure comprises the first dumbbell shape defect ground structure (14) and the second dumbbell shape defect ground structure (15), first dumbbell shape defect ground structure (14) and the second dumbbell shape defect ground structure (15) are made up of upper two the foursquare defects of ground plate (10) and the gap slot that is connected these two defects respectively, and the first dumbbell shape defect ground structure (14) and the second dumbbell shape defect ground structure (15) lay respectively at the below of the first open circuit minor matters (4) and the second open circuit minor matters (8).
2. a kind of low pass filter having abrupt transition and improve stopband according to claim 1, it is characterized in that: dielectric-slab (1) dielectric constant is 2.55, thickness is 1.5 mm, and the width of conduction band (2) is 4.5 mm.
3. a kind of low pass filter that there is abrupt transition and improve stopband according to claim 1, it is characterized in that: beyond the length of the division ring groove part gap of the first complementary type rectangular aperture defected microstrip structure (3) and the second complementary type rectangular aperture defected microstrip structure (9) is unequal, other size is all identical.
4. a kind of low pass filter that there is abrupt transition and improve stopband according to claim 3, it is characterized in that: the length of the outer ring groove part gap (11) of the first complementary type rectangular aperture defected microstrip structure (3) is 8.0mm, width is 3.6mm, the length of ring-like gap, inner side (12) is 6.8mm, width is 2.4mm, the length of opening (13) is 0.6mm, and the spacing of interior outer ring groove part gap (11) is 0.3mm; The length of the outer ring groove part gap (11) of the second complementary type rectangular aperture defected microstrip structure (9) is 6.3mm, width is 3.6mm, the length of ring-like gap, inner side (12) is 5.1mm, width is 2.4mm, the length of opening (13) is 0.6mm, and the spacing of interior outer ring groove part gap (11) is 0.3mm.
5. a kind of low pass filter having abrupt transition and improve stopband according to claim 1, is characterized in that: the width of the first open circuit minor matters (4) is 4.2mm, and length is 8.8mm; The width of the second open circuit minor matters (8) is 4.2mm, and length is 5.8mm; The width 10.2mm of the 3rd open circuit minor matters (6), length is 5.35mm.
6. a kind of low pass filter that there is abrupt transition and improve stopband according to claim 1, it is characterized in that: the first crestal line (5) and the second crestal line (7) are 4.1mm along the length in conduction band (2) Width gap, length along conduction band (2) length direction gap is 3.6mm, and the width in gap is 0.4mm.
7. a kind of low pass filter that there is abrupt transition and improve stopband according to claim 1, it is characterized in that: in the first dumbbell shape defect ground structure (14), the length of square defect is 2.3mm, the gap slot width connecting two square defects is 0.3mm, length is 5.0mm, in second dumbbell shape defect ground structure (15) dumbbell shape defect ground structure, the length of square defect is 1.9mm, the gap slot width connecting two square defects is 0.3mm, length is 5.0mm, center distance between first dumbbell shape defect ground structure (14) and the second dumbbell shape defect ground structure (15) is 14.65mm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104332685A (en) * | 2014-10-22 | 2015-02-04 | 浙江中烟工业有限责任公司 | Low-pass filter having steep transition and improved stop band |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104332685A (en) * | 2014-10-22 | 2015-02-04 | 浙江中烟工业有限责任公司 | Low-pass filter having steep transition and improved stop band |
| CN104332685B (en) * | 2014-10-22 | 2017-01-25 | 浙江中烟工业有限责任公司 | Low-pass filter having steep transition and improved stop band |
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