CN104332685B - Low-pass filter having steep transition and improved stop band - Google Patents
Low-pass filter having steep transition and improved stop band Download PDFInfo
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- CN104332685B CN104332685B CN201410567302.7A CN201410567302A CN104332685B CN 104332685 B CN104332685 B CN 104332685B CN 201410567302 A CN201410567302 A CN 201410567302A CN 104332685 B CN104332685 B CN 104332685B
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Abstract
The invention relates to a low-pass filter having steep transition and improved stop band. The low-pass filter comprises a medium plate, a conduction band, complementary-type rectangular opening defected microstrip structures, open circuit branch knots, ridge lines, a grounding plate and dumbbell-type defected ground structures. The complementary-type rectangular opening defected microstrip structures comprise a first complementary-type rectangular opening defected microstrip structure and a second complementary-type rectangular opening defected microstrip structure, wherein the first complementary-type rectangular opening defected microstrip structure and the second complementary-type rectangular opening defected microstrip structure are arranged at the two sides of the conduction band respectively; and each complementary-type rectangular opening defected microstrip structure is formed by an inner side annular seam and an outer side annular seam, the opening directions of which are opposite. The open circuit branch knots comprise a first open circuit branch knot, a second open circuit branch knot and a third open circuit branch knot. The ridge lines comprise a first ridge line and a second ridge line. The dumbbell-type defected ground structures comprise a first dumbbell-type defected ground structure and a second dumbbell-type defected ground structure. The low-pass filter improves the width of the stop band, and passband loss is low.
Description
Technical field
The invention belongs to technical field of micro communication, more particularly, to a kind of low pass filtered that there is abrupt transition and improve stopband
Ripple device, can be applicable to suppress harmonic wave and the parasitic signal of the generation of the circuit such as power amplifier, frequency mixer, agitator.
Background technology
Modern wireless communication systems in the urgent need to abrupt transition and Wide stop bands low pass filter to suppress power amplifier,
Harmonic wave and parasitic signal that the circuit such as frequency mixer, agitator produce.The abrupt transition of passband to stopband can ensure very high frequency
Selectivity, wide stopband then can suppress the parasitic disturbances signal in broadband.Traditional micro-strip form wave filter can only provide
Passband is to the relatively slow transition of stopband and narrower bandwidth of rejection.In order to improve frequency selectivity and improve resistance band, often
Need to improve the exponent number of wave filter, but thus can bring the rising of pass-band loss and the increase of device size.
Defect ground structure (defected ground structure, dgs) is erosion on the earth plate of planar transmission line
Carve the defect pattern of definite shape, its maximum advantage is that have significant stopband and Slow-wave effect characteristic, and this is due to connecing
Defect on floor disturbs CURRENT DISTRIBUTION, result in transmission line equivalent inductance and the change of electric capacity.Because each dgs unit can
To produce a transmission zero, can achieve wide stopband by cascading multiple dgs units of different length.However, with dgs
The increase of unit, pass-band loss can increase therewith, and the radiation in high frequency treatment can significantly rise, and is unfavorable for practical application.
As the extension of defect ground structure, the defected microstrip structure developing in recent years (defected microstrip
Structure, dms) it is that uniform or non-homogeneous slit is etched on micro-strip conduction band, equally there is significant stopband and slow
Wave effect, and there is less electromagnetic interference surface noise.The frequency response of defected microstrip structure and the close phase of planform
Close, there is by exploitation the defected microstrip structure unit of abrupt transition and minimum pass-band loss, simultaneously integrated use defect ground knot
The resonant elements such as structure, open circuit minor matters, can be new with the enforcement of the low pass filter improving stopband offer for having abrupt transition
Means.
Content of the invention
For low pass filter existing realize present in technology not enough, the purpose of the present invention is to propose to one kind has suddenly
High and steep transition and the low pass filter improving stopband, to solve, existing low-pass filter frequency selectivity is not high, stopband is narrower, logical
The problems such as band loss is larger.
In order to realize above-mentioned purpose, present invention employs following technical scheme:
A kind of low pass filter having abrupt transition and improving stopband, this wave filter includes dielectric-slab, conduction band, complementary type
Rectangular aperture defected microstrip structure, open circuit minor matters, crestal line, earth plate and dumbbell shape defect ground structure, conduction band is arranged on dielectric-slab
Front, earth plate is arranged on the back side of dielectric-slab；It is complementary that described complementary type rectangular aperture defected microstrip structure includes first
Type rectangular aperture defected microstrip structure and the second complementary type rectangular aperture defected microstrip structure, the first complementary type rectangular aperture defect
Microstrip structure and the second complementary type rectangular aperture defected microstrip structure are separately positioned on the both sides of conduction band, and each complementary type rectangle is opened
Mouthful defected microstrip structure is made up of the ring-like gap in two contrary inner sides of opening direction and the ring-like gap in outside, the ring-like gap in inner side
Etched by conduction band with one heart with the ring-like gap in outside and formed；Described open circuit minor matters include the first open circuit minor matters, the second open circuit branch
Connect setting lacks in the first complementary type rectangular aperture respectively for section and the 3rd open circuit minor matters, the first open circuit minor matters and the second open circuit minor matters
Sunken microstrip structure and the inner side of the second complementary type rectangular aperture defected microstrip structure, the 3rd described open circuit minor matters are located at conduction band
Middle；Described crestal line includes the first crestal line and the second crestal line, and the first crestal line and the second crestal line are symmetrically set, the first crestal line and
Second crestal line is with conduction band widthwise edges as starting point respectively, is formed by the curved slot etching 90 degree, and the first crestal line connects
It is arranged between the first open circuit minor matters and the 3rd open circuit minor matters, the second crestal line connect setting is in the second open circuit minor matters and the 3rd open circuit
Between minor matters；Described dumbbell shape defect ground structure is tied with including the first dumbbell shape defect ground structure and the second dumbbell shape defect
Structure, the first dumbbell shape defect ground structure and the second dumbbell shape defect ground structure respectively by two foursquare defects on earth plate with
And connect gap slot composition, the first dumbbell shape defect ground structure and the second dumbbell shape defect ground structure position respectively of this two defects
Lower section in the first open circuit minor matters and the second open circuit minor matters.
As improving further, described dielectric-slab dielectric constant is 2.55, and thickness is 1.5 mm, and the width of conduction band is
4.5 mm.
As improving further, the first described complementary type rectangular aperture defected microstrip structure and the second complementary type rectangle are opened
Beyond the length of the division ring groove part gap of mouth defected microstrip structure is unequal, other size all sames.
As improving further, the length in the described ring-like gap in outside of the first complementary type rectangular aperture defected microstrip structure
Spend for 8.0mm, width is 3.6mm, the length in the ring-like gap in inner side is 6.8mm, and width is 2.4mm, and the length of opening is
0.6mm, the spacing of inside and outside side ring groove part gap is 0.3mm；The ring-like seam in outside of the second complementary type rectangular aperture defected microstrip structure
The length of gap is 6.3mm, and width is 3.6mm, and the length in the ring-like gap in inner side is 5.1mm, and width is 2.4mm, the length of opening
It is 0.6mm, the spacing of inside and outside side ring groove part gap is 0.3mm.
As improving further, the width of the first described open circuit minor matters is 4.2mm, and length is 8.8mm；Second open circuit branch
The width of section is 4.2mm, and length is 5.8mm；The width 10.2mm of the 3rd open circuit minor matters, length is 5.35mm.
As improving further, the first described crestal line and the second crestal line along the length in conduction band width gap are
4.1mm, the length along conduction band length direction gap is 3.6mm, and the width in gap is 0.4mm.
As improving further, in the first described dumbbell shape defect ground structure, the length of square defect is 2.3mm, even
The breach well width connecing two square defects is 0.3mm, and length is 5.0mm, and the second dumbbell shape defect ground structure dumbbell shape lacks
In sunken ground structure, the length of square defect is 1.9mm, and the breach well width connecting two square defects is 0.3mm, length
For 5.0mm, the center distance between the first dumbbell shape defect ground structure and the second dumbbell shape defect ground structure is 14.65mm.
The complementary type rectangular aperture defected microstrip structure of the present invention has precipitous indicial response and minimum pass-band loss,
The position of transmission zero can be changed by the size of adjustment structure.First and second transmission zeros are respectively by various sizes of
One complementary type rectangular aperture defected microstrip structure and the second complementary type rectangular aperture defected microstrip structure produce and are arrived with obtaining passband
The abrupt transition of stopband and minimum pass-band loss.Third and fourth transmission zero is opened by various sizes of first, second respectively
Road minor matters produce.And wide resistance is obtained by first, second crestal line and the 3rd open circuit minor matters and dumbbell shape defect ground structure
Band.
Low pass filter proposed by the present invention, take full advantage of defected microstrip structure and defect ground structure notable stopband and
Slow-wave effect, has the abrupt transition to stopband for the passband, the resistance band of improvement, the low-loss in passband is it is easy to put down with other
The advantages of face microwave circuit is integrated.Meanwhile, front four transmission zeros of this low pass filter can be distinguished and freely adjust, and be device
Design brings great convenience.
Brief description
Fig. 1 is that the present invention has abrupt transition and improves the general structure schematic diagram of the low pass filter of stopband.
Fig. 2 is that the present invention has abrupt transition and improves the positive structure schematic of the low pass filter of stopband.
Fig. 3 is that the present invention has abrupt transition and improves the structure schematic diagram of the low pass filter of stopband.
Fig. 4 is that the present invention has abrupt transition and improves the frequency response results of the low pass filter emulation of stopband.
Specific embodiment
Below in conjunction with the accompanying drawings the specific embodiment of the present invention is made a detailed explanation.
A kind of low pass filter having abrupt transition and improving stopband as shown in Figure 1, this wave filter includes dielectric-slab
1st, conduction band 2, complementary type rectangular aperture defected microstrip structure, open circuit minor matters, crestal line, earth plate 10 and dumbbell shape defect ground structure,
Conduction band 2 is arranged on the front of dielectric-slab 1, and earth plate 10 is arranged on the back side of dielectric-slab 1.Described dielectric-slab 1 dielectric constant is
2.55, thickness is 1.5 mm, and the width of conduction band 2 is 4.5 mm, to obtain the characteristic impedance of 50 ω.
As shown in Fig. 2 described complementary type rectangular aperture defected microstrip structure includes the first complementary type rectangular aperture defect
Microstrip structure 3 and the second complementary type rectangular aperture defected microstrip structure 9, the first complementary type rectangular aperture defected microstrip structure 3 He
Second complementary type rectangular aperture defected microstrip structure 9 is separately positioned on the both sides of conduction band 2, and each complementary type rectangular aperture defect is micro-
Band structure is made up of the ring-like gap 12 in two contrary inner sides of opening direction and the ring-like gap in outside 11, the ring-like gap in inner side 12 He
The ring-like gap in outside 11 is etched by conduction band 2 with one heart and is formed.The outside of the first complementary type rectangular aperture defected microstrip structure 3 is ring-like
The length in gap 11 is 8.0mm, and width is 3.6mm, and the length in the ring-like gap in inner side 12 is 6.8mm, and width is 2.4mm, opening
13 length is 0.6mm, and the spacing of inside and outside side ring groove part gap 11 is 0.3mm.Second complementary type rectangular aperture defect micro-strip knot
The length in the ring-like gap in outside 11 of structure 9 is 6.3mm, and width is 3.6mm, and the length in the ring-like gap in inner side 12 is 5.1mm, width
For 2.4mm, the length of opening 13 is 0.6mm, and the spacing of inside and outside side ring groove part gap 11 is 0.3mm.
As shown in Fig. 2 described open circuit minor matters include first open circuit minor matters the 4, second open circuit minor matters 8 and the 3rd open circuit minor matters
6, the first open circuit minor matters 4 and second open a way minor matters 8 difference connect setting in the first complementary type rectangular aperture defected microstrip structure 3 He
The inner side of the second complementary type rectangular aperture defected microstrip structure 9, the 3rd described open circuit minor matters 6 are located at the centre of conduction band 2.Described
First open circuit minor matters 4 width be 4.2mm, length be 8.8mm；The width of the second open circuit minor matters 8 is 4.2mm, and length is
5.8mm；The width 10.2mm of the 3rd open circuit minor matters 6, length is 5.35mm.
Described crestal line includes the first crestal line 5 and the second crestal line 7, and the first crestal line 5 and the second crestal line 7 are symmetrically set, the
One crestal line 5 and the second crestal line 7 are with conduction band 2 widthwise edges as starting point respectively, are formed by the curved slot etching 90 degree, the
, between the first open circuit minor matters 4 and the 3rd open circuit minor matters 6, the second crestal line 7 connect setting is in the second open circuit for one crestal line 5 connect setting
Between minor matters 8 and the 3rd open circuit minor matters 6.First crestal line 5 and the second crestal line 7 along the length in conduction band 2 width gap are
4.1mm, the length along conduction band 2 length direction gap is 3.6mm, and the width in gap is 0.4mm.
As shown in figure 3, described dumbbell shape defect ground structure includes the first dumbbell shape defect ground structure 14 and the second dumbbell
Type defect ground structure 15, the first dumbbell shape defect ground structure 14 and the second dumbbell shape defect ground structure 15 are respectively by earth plate 10
Two foursquare defects and the gap slot composition connecting this two defects, the first dumbbell shape defect ground structure 14 and second is mute
Bell type defect ground structure 15 is located at the first open circuit minor matters 4 and the lower section of the second open circuit minor matters 8 respectively.First dumbbell shape defect ground knot
In structure 14, the length of square defect is 2.3mm, and the breach well width connecting two square defects is 0.3mm, and length is
5.0mm, in the second dumbbell shape defect ground structure 15, the length of square defect is 1.9mm, connects lacking of two square defects
Mouthful well width is 0.3mm, and length is 5.0mm, the first dumbbell shape defect ground structure 14 and the second dumbbell shape defect ground structure 15 it
Between center distance be 14.65mm.
The frequency response simulation result of this embodiment of the invention is as shown in figure 4, include the s21(transmission coefficient of solid line) parameter
S11(reflection coefficient with dotted line) parameter, wherein abscissa represents frequency component, and unit is ghz, and vertical coordinate represents amplitude and becomes
Amount, unit is db.The transition band width of this embodiment passband to stopband is that 0.33ghz(3db and 39.8db decay frequency is located at respectively
4.01ghz and 4.34ghz), frequency selectance is 111.5db/ghz, the resistance band of 20db for 4.25ghz to more than 15ghz,
From direct current to 3.42ghz, Insertion Loss is less than 0.3db, and the reflection coefficient in passband is better than -20db substantially.
Although describing the present invention on the basis of above-described embodiment, the invention is not limited in this, tool
The people having association area background knowledge can carry out various deformation, the defect ground structure such as taking other form on this basis
To obtain wide stopband.Therefore, these deformation and other meet the thought of the present invention or employ the technical side of the present invention
Case, all should belong within protection scope of the present invention.
Claims (7)
1. a kind of have abrupt transition and improve the low pass filter of stopband, and this wave filter includes dielectric-slab (1), conduction band (2), mutually
Apotype rectangular aperture defected microstrip structure, open circuit minor matters, crestal line, earth plate (10) and dumbbell shape defect ground structure, conduction band (2) sets
Put the front in dielectric-slab (1), earth plate (10) is arranged on the back side of dielectric-slab (1)；It is characterized in that: described complementary type square
Shape flaws microstrip structure includes the first complementary type rectangular aperture defected microstrip structure (3) and the second complementary type rectangular aperture lacks
Sunken microstrip structure (9), the first complementary type rectangular aperture defected microstrip structure (3) and the second complementary type rectangular aperture defect micro-strip knot
Structure (9) is separately positioned on the two ends of conduction band (2), and each complementary type rectangular aperture defected microstrip structure is contrary by two opening directions
The ring-like gap in inner side (12) and outside ring-like gap (11) constitute, the ring-like gap in inner side (12) and outside ring-like gap (11) are together
The heart is etched by conduction band (2) and is formed；Described open circuit minor matters include the first open circuit minor matters (4), the second open circuit minor matters (8) and the 3rd
Open circuit minor matters (6), the first open circuit minor matters (4) and the second open circuit minor matters (8) are carried in the side of conduction band (2) respectively, and first
, in the same side of conduction band (2), the 3rd open circuit minor matters (6) is carried in conduction band (2) for open circuit minor matters (4) and the second open circuit minor matters (8)
Both sides；First open circuit minor matters (4) and the second open circuit minor matters (8) difference connect setting are in the first complementary type rectangular aperture defect micro-strip
Structure (3) and the inner side of the second complementary type rectangular aperture defected microstrip structure (9), the 3rd described open circuit minor matters (6) is located at leads
The centre of band (2)；Described crestal line includes the first crestal line (5) and the second crestal line (7), and the first crestal line (5) and the second crestal line (7) are mutually
It is symmetrical arranged, the first crestal line (5) and the second crestal line (7) are with conduction band (2) widthwise edges as starting point respectively, by etching 90 degree
Curved slot form, the first crestal line (5) connect setting is opened a way between minor matters (6) in the first open circuit minor matters (4) and the 3rd, second
Crestal line (7) connect setting is between the second open circuit minor matters (8) and the 3rd open circuit minor matters (6)；Described dumbbell shape defect ground structure
Including the first dumbbell shape defect ground structure (14) and the second dumbbell shape defect ground structure (15), the first dumbbell shape defect ground structure
(14) and the second dumbbell shape defect ground structure (15) respectively by the upper two foursquare defects of earth plate (10) and connect this two
The gap slot of individual defect is constituted, and the first dumbbell shape defect ground structure (14) and the second dumbbell shape defect ground structure (15) are located at respectively
First open circuit minor matters (4) and the lower section of the second open circuit minor matters (8).
2. according to claim 1 a kind of have abrupt transition and improve stopband low pass filter it is characterised in that: be situated between
Scutum (1) dielectric constant is 2.55, and thickness is 1.5 mm, and the width of conduction band (2) is 4.5 mm.
3. according to claim 1 a kind of there is abrupt transition and the low pass filter that improves stopband it is characterised in that: the
One complementary type rectangular aperture defected microstrip structure (3) and the division ring groove part of the second complementary type rectangular aperture defected microstrip structure (9)
Beyond the length of gap is unequal, other size all sames.
4. according to claim 3 a kind of there is abrupt transition and the low pass filter that improves stopband it is characterised in that: the
The length in the ring-like gap in outside (11) of one complementary type rectangular aperture defected microstrip structure (3) is 8.0mm, and width is 3.6mm, interior
The length of side ring groove part gap (12) is 6.8mm, and width is 2.4mm, and the length of opening (13) is 0.6mm, inside and outside side ring groove part
The spacing of gap (11) is 0.3mm；The length in the ring-like gap in outside (11) of the second complementary type rectangular aperture defected microstrip structure (9)
For 6.3mm, width is 3.6mm, and the length in the ring-like gap in inner side (12) is 5.1mm, and width is 2.4mm, the length of opening (13)
It is 0.6mm, the spacing of inside and outside side ring groove part gap (11) is 0.3mm.
5. according to claim 1 a kind of there is abrupt transition and the low pass filter that improves stopband it is characterised in that: the
The width of one open circuit minor matters (4) is 4.2mm, and length is 8.8mm；The width of the second open circuit minor matters (8) is 4.2mm, and length is
5.8mm；The width 10.2mm of the 3rd open circuit minor matters (6), length is 5.35mm.
6. according to claim 1 a kind of there is abrupt transition and the low pass filter that improves stopband it is characterised in that: the
One crestal line (5) and the second crestal line (7) are 4.1mm along the length in conduction band (2) width gap, along conduction band (2) length side
It is 3.6mm to the length in gap, the width in gap is 0.4mm.
7. according to claim 1 a kind of there is abrupt transition and the low pass filter that improves stopband it is characterised in that: the
In one dumbbell shape defect ground structure (14), the length of square defect is 2.3mm, connects the breach groove width of two square defects
Spend for 0.3mm, length is 5.0mm, square defect in the second dumbbell shape defect ground structure (15) dumbbell shape defect ground structure
Length is 1.9mm, and the breach well width connecting two square defects is 0.3mm, and length is 5.0mm, the first dumbbell shape defect
Center distance between ground structure (14) and the second dumbbell shape defect ground structure (15) is 14.65mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410567302.7A CN104332685B (en) | 2014-10-22 | 2014-10-22 | Low-pass filter having steep transition and improved stop band |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410567302.7A CN104332685B (en) | 2014-10-22 | 2014-10-22 | Low-pass filter having steep transition and improved stop band |
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| Publication Number | Publication Date |
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| CN104332685A CN104332685A (en) | 2015-02-04 |
| CN104332685B true CN104332685B (en) | 2017-01-25 |
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| CN113764862B (en) * | 2021-09-03 | 2024-03-01 | 北京有竹居网络技术有限公司 | Antenna and wearable device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103700910A (en) * | 2014-01-08 | 2014-04-02 | 西南大学 | Complementary opening resonance ring and defect ground structure half module substrate integrated waveguide dual-band filter |
| CN204205012U (en) * | 2014-10-22 | 2015-03-11 | 浙江中烟工业有限责任公司 | A kind of low pass filter that there is abrupt transition and improve stopband |
-
2014
- 2014-10-22 CN CN201410567302.7A patent/CN104332685B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103700910A (en) * | 2014-01-08 | 2014-04-02 | 西南大学 | Complementary opening resonance ring and defect ground structure half module substrate integrated waveguide dual-band filter |
| CN204205012U (en) * | 2014-10-22 | 2015-03-11 | 浙江中烟工业有限责任公司 | A kind of low pass filter that there is abrupt transition and improve stopband |
Non-Patent Citations (3)
| Title |
|---|
| Compact Elliptic-Function Low-Pass Filter Using Defected Ground Structure;Jinping Yang and Wen Wu;《IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS》;20080930;全文 * |
| DESIGN OF CROSS-COUPLED DUAL-BAND FILTER WITH EQUAL-LENGTH SPLIT-RING RESONATORS;J.-W. Fan;《Progress In Electromagnetics Research》;20071231;全文 * |
| 互补开环谐振器低通滤波器的设计;王慧娜;《上海大学学报》;20090630;全文 * |
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