CN108270061B - Differential power divider with filtering characteristic - Google Patents
Differential power divider with filtering characteristic Download PDFInfo
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- CN108270061B CN108270061B CN201810034619.2A CN201810034619A CN108270061B CN 108270061 B CN108270061 B CN 108270061B CN 201810034619 A CN201810034619 A CN 201810034619A CN 108270061 B CN108270061 B CN 108270061B
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Abstract
The invention discloses a differential power divider with a filtering characteristic, which mainly solves the problem of poor common mode rejection degree and selectivity in the prior art. The microstrip antenna comprises a microstrip medium substrate (1) and a metal ground plate (4), wherein a U-shaped input microstrip feeder line (2), a U-shaped output microstrip feeder line (3) and two L-shaped stepped impedance microstrip lines (5, 10) are printed on the microstrip medium substrate; two stepped impedance gap line structures (7, 12), a T-shaped uniform impedance gap line structure (8), two L-shaped stepped impedance gap line structures (9, 11) and two uniform impedance gap lines (13, 14) are etched on a metal grounding plate (4), and the center of the first uniform impedance gap line (13) is bridged over a first isolation resistor R1The center of the second uniform impedance gap line (14) is connected with a second isolation resistor R in a crossing way2. The invention has good selectivity, high common mode rejection degree and isolation degree, and can be used for mobile communication.
Description
Technical Field
The invention belongs to the technical field of microwave and radio frequency, and particularly relates to a differential power divider which can be applied to a radio frequency front end of a wireless communication system.
Background
The filter and the power divider are two indispensable key devices in the modern mobile communication system, and can respectively realize the selection of signals and the distribution/synthesis of signal power. In recent years, with the rapid development of mobile communication technology, the demand for miniaturization and cost reduction of communication systems is increasing, and the continuous use of some conventional single-function devices will inevitably lead to the increase in size and cost of the systems. Based on this trend, some dual function devices, such as power dividers having a filtering characteristic, have been widely studied. On the other hand, the differential system has a good inhibition effect on environmental noise, so that the sensitivity of the system can be improved, and the high-quality communication requirement of the modern communication system is met. Therefore, in order to improve the interference immunity of the wireless communication system and to miniaturize the communication system, many research institutes and researchers at home and abroad have been devoted to research on the differential filter power divider in recent years.
In 2013, the university of Lin-Sheng Wu et al published an article balance-to-balance Gysel power divider With Filtering Response in the top journal IEEE TRANSACTIONMICROWAVE THEORY AND TECHNIQUES in the microwave field, but the selectivity of the Filtering power divider is poor.
In 2010, the study of Chiau-Ling Huang et al published a paper Filter Power Divider for Differential Input and Output Signals on the 2013 Asia-Pacific Microwave Conference. A differential filtering power divider is designed based on three cascaded mutually-coupled U-shaped resonators, but common mode rejection is not ideal due to structural problems.
In 2017 Ming Luo et al published in the IEEE MICROWAVE AND WIRELESS COMPOSITENTS LETTERS journal on paper A Compact balance-to-balance Filter Power Dividering lambda g/2 detectors and Short-Stub-Loaded Resonator. The novel structure adopted in the text improves the common-mode rejection of the differential filtering power divider, but the insertion loss is larger.
Disclosure of Invention
The present invention is directed to provide a differential power divider with filtering characteristics to reduce insertion loss, improve selectivity and common mode rejection, and meet the requirement of a mobile communication system for excellent performance.
In order to achieve the above purpose, the differential power divider with filtering characteristics of the present invention comprises a microstrip medium substrate 1 and a metal ground plate 4, wherein the upper surface of the microstrip medium substrate 1 is provided with a U-shaped input microstrip feeder 2, two U-shaped output microstrip feeders 3, two first L-shaped stepped impedance microstrip lines 5 and two second L-shaped stepped impedance microstrip lines 10; the metal grounding plate 4 is positioned on the lower surface of the microstrip medium substrate 1, and is characterized in that:
the metal grounding plate 4 is provided with a first stepped impedance gap line structure 7 and a T-shaped uniform impedance gap line structure 8 which are sequentially etched and connected; the tail ends of two branches of the T-shaped uniform impedance slit line structure 8 are respectively provided with two symmetrical first L-shaped stepped impedance slit line structures 9; two symmetrical second L-shaped stepped impedance slot line structures 11 are arranged right in front of the two first L-shaped stepped impedance slot line structures 9; the tail end of the second L-shaped stepped impedance slit line structure 11 is provided with a second stepped impedance slit line structure 12;
the U-shaped input microstrip feeder 2 is positioned right above the first stepped impedance slot line structure 7; the U-shaped output microstrip feeder line 3 is positioned right above each second stepped impedance slot line structure 12; the two first L-shaped stepped impedance microstrip lines 5 are respectively positioned right above each first L-shaped stepped impedance slot line structure 9; the two second L-shaped stepped impedance microstrip lines 10 are respectively located right above each second L-shaped stepped impedance slot line structure 11;
a first uniform impedance gap line 13 is arranged between the two first L-shaped stepped impedance gap line structures 9, and the center of the first uniform impedance gap line 13 is connected across a first isolation resistor R1(ii) a A second uniform impedance gap line 14 is arranged between the two second L-shaped stepped impedance gap line structures 11, and a second isolation resistor R is connected to the center position of the second uniform impedance gap line 14 in a crossing manner2。
Preferably, a stub-loaded resonator 6 is arranged between each first L-shaped stepped impedance microstrip line 5 and each second L-shaped stepped impedance microstrip line 10; the first L-shaped stepped impedance microstrip line 5 and the second L-shaped stepped impedance microstrip line 10 are symmetrical with respect to the stub-loaded resonator 6.
Preferably, the T-shaped slot line structure 8 is composed of a vertical line of uniform impedance slot and two horizontal lines of uniform impedance slot, so as to achieve an even distribution of input signal power.
Compared with the prior art, the invention has the following advantages:
1. the invention adopts the gap line structure loaded with the isolation resistor, thereby improving the differential mode isolation between the two output ports and reducing the mutual interference of signals between the output ports.
2. The invention adopts the branch-node loading type resonator and the L-shaped stepped impedance microstrip lines which are symmetrical on two sides of the branch-node loading type resonator, and can respectively generate a transmission zero point on two sides of the differential mode passband, thereby improving the selectivity.
3. The invention adopts the T-shaped slot line structure, can realize the power distribution characteristic, and has small size, simple structure and easy realization.
4. The invention can realize the transition transmission of differential mode signals and the suppression of common mode signals by adopting the U-shaped microstrip feeder line and the stepped impedance slot line structure positioned right below the U-shaped microstrip feeder line.
Drawings
FIG. 1 is an overall block diagram of the present invention;
FIG. 2 is a top block diagram of the present invention;
FIG. 3 is a bottom block diagram of the present invention;
FIG. 4 is an S parameter simulation and actual map of differential mode return loss and differential mode insertion loss of the present invention;
FIG. 5 is an S parameter simulation and empirical graph of differential mode isolation of the present invention;
FIG. 6 is a simulation and actual map of the magnitude and phase imbalance of the present invention;
fig. 7 is an S-parameter simulation and actual map of common mode return loss and common mode insertion loss of the present invention.
Detailed Description
The embodiments of the present invention will be described in detail below with reference to the accompanying drawings:
referring to fig. 1, the differential power divider with filtering characteristics of this embodiment is implemented by a double-sided copper-clad plate, and includes a microstrip dielectric substrate 1, a metal ground plate 4, a U-shaped input microstrip feed line 2, two U-shaped output microstrip feed lines 3, two first L-shaped stepped impedance microstrip lines 5, two stub-loaded resonators 6, and two second L-shaped stepped impedance microstrip lines 10; the metal ground plate 4 is etched with first stepped impedance gap line structure 7, the even impedance gap line structure 8 of T type, two first L type stepped impedance gap line structures 9, two second L type stepped impedance gap line structures 11 and two second stepped impedance gap line structures 12, wherein:
the microstrip dielectric substrate 1 is made of F4BM-2 material with the dielectric constant of 2.2, the size of 70mm multiplied by 40mm and the thickness of 0.8 mm; the U-shaped input microstrip feeder line 2, the U-shaped output microstrip feeder line 3, the first L-shaped stepped impedance microstrip line 5, the branch loading type resonator 6 and the second L-shaped stepped impedance microstrip line 10 are positioned on the upper surface of the microstrip medium substrate 1; the metal grounding plate 4 is positioned on the lower surface of the microstrip dielectric substrate 1.
Referring to fig. 2 and 3, the U-shaped input microstrip feed line 2 is formed by connecting two 50-ohm microstrip vertical lines and one microstrip horizontal line, the two 50-ohm microstrip vertical lines are used for inputting differential mode signals, the middle microstrip horizontal line is used as the bottom edge of the U-shaped microstrip feed line, and forms a transition structure with the first stepped impedance slot line structure 7 right below the U-shaped microstrip feed line, so as to transmit differential mode signals and suppress common mode signals. The length L of two parallel 50ohm microstrip vertical lines of the U-shaped input microstrip feeder 2114.0mm-15.0mm, line width W12.2-2.5mm, this example is not limited to L1Is 14.0mm, W1Is 2.4 mm. Microstrip transverse line length L of U-shaped input microstrip feeder line 2214.0mm-15.0mm, line width W22.5mm-3.0mm, this example is not limited to L2Is 14.4mm, W2Is 2.8 mm;
the total length of the first ladder impedance slot line structure 7 is a quarter of the guided wave wavelength, so as to smoothly realize the signal transition from the microstrip line to the slot line. The first step impedance slot line structure 7 has a first step slot line length Ls15.0mm-7.0mm, width Ws1Is 7.0mm-9.0mm, and is not limited to L in this embodiments1Is 6.0mm, Ws18.0 mm; length L of second order gap lines22.5mm-3mm, width Ws2Is 0.2mm-0.5mm, and is not limited to L in this embodiments1Is 2.8mm, Ws1Is 0.3 mm.
The T-shaped uniform impedance gap line structure 8 is connected to the end of the first stepped impedance gap line structure 7, and the T-shaped uniform impedance gap line structure 8 is composed of a vertical uniform impedance gap line and two horizontal uniform impedance gap lines, and is used for realizing the average distribution of input signal power. One line of the T-shaped slot line structure 8 is uniformThe impedance gap vertical line has the same width as two identical uniform impedance gap horizontal lines, and the width W of the impedance gap vertical line is the same as that of the two identical uniform impedance gap horizontal liness30.1mm-0.4mm, uniform impedance microstrip vertical line length Ls33.0mm-6.0mm, uniform impedance gap transverse line length Ls4Is 13.0mm-15.0 mm. This example is not limited to Ws3Is 0.2mm, Ls3Is 4.0mm, Ls4Is 14.4 mm.
The two first L-shaped stepped impedance slot line structures 9 are respectively connected to the ends of the two branches of the T-shaped uniform impedance slot line structure 8 in bilateral symmetry, and the total length of the second-order slot line of the first L-shaped stepped impedance slot line structure 9 is a quarter of the guided wave wavelength, so as to smoothly realize the transition of signals from the slot line to the microstrip line; the length L of the first-step slot line of the first L-shaped stepped impedance slot line structure 9s52.0mm-4.0mm, width Ws4Is 0.1mm-0.3mm, and is not limited to L in this embodiments5Is 3.0mm, Ws4Is 0.2 mm; total length L of second-step gap lines6Is 12.0mm-14.0mm in width Ws5Is 0.8mm-1.2 mm. This example is not limited to Ls6Is 13.5mm, Ws5Is 1.0 mm.
The two second L-shaped stepped impedance slot line structures 11 are located right in front of the first L-shaped stepped impedance slot line structure 9 and are bilaterally symmetrical, and the total length of the first-order slot line of the second L-shaped stepped impedance slot line structure 11 is one-fourth of the guided wave wavelength, so that the transition of a signal from the microstrip line to the slot line is smoothly realized. The total length L of the first-stage slot line of the second L-shaped stepped impedance slot line structure 11s7Is 12.0mm-14.0mm in width Ws6Is 0.8mm-1.2mm, and is not limited to L in this examples7Is 13.5mm, Ws6Is 1.0 mm; length L of second order gap lines8Is 3.0mm-6.0mm, width Ws7Is 0.1mm-0.3mm, and is not limited to L in this embodiments8Is 5.0mm, Ws7Is 0.2 mm.
The two first L-shaped stepped impedance microstrip lines 5 are respectively located right above each first L-shaped stepped impedance slot line structure 9, and are bilaterally symmetrical, and the total length of the first-order microstrip line of the first L-shaped stepped impedance microstrip line 5 is a quarter of the guided wave wavelength, so as to smoothly realize the transition of signals from the slot line to the microstrip line; the two second L-shaped stepped impedance microstrip lines 10 are respectively located right above each second L-shaped stepped impedance slot line structure 11 and are bilaterally symmetrical; the branch-node loaded resonators 6 are positioned between each first L-shaped stepped impedance microstrip line 5 and each second L-shaped stepped impedance microstrip line 10, and are symmetrical left and right; the first L-shaped stepped impedance microstrip line 5 and the second L-shaped stepped impedance microstrip line 10 are bilaterally symmetric with respect to the stub-loaded resonator 6.
The total length L of the first-order microstrip line of the first L-shaped stepped impedance microstrip line 5313.0mm-15.5mm, width W3Is 0.9mm-1.5mm, and is not limited to L in this example3Is 14.0mm, W3Is 1.2 mm; length L of the second order microstrip line4Is 14.5mm-16.5mm in width W4Is 0.3mm-0.6mm, and is not limited to L in this embodiment4Is 16.0mm, W4Is 0.5 mm.
The total length L of each stub-loaded resonator 6r40.0mm-45.0mm, width WrIs 0.4mm-0.6mm, and is not limited to L in this embodimentrIs 42.0mm, WrIs 0.5 mm; its loaded open-circuit branch length LrtIs 15.0mm-18.0mm in width WrtIs 0.8mm-1.4mm, and is not limited to L in this examplertIs 17.0mm, WrtIs 1.2 mm; the distance between the stub-loaded resonator 6 and the first L-shaped stepped impedance microstrip line 5 and the second L-shaped stepped impedance microstrip line 10 is equal, and g is 0.1mm to 0.4mm, but the embodiment is not limited to that g is 0.3 mm.
The second stepped impedance slot line structures 12 are respectively connected to the tail ends of the second L-shaped stepped impedance slot line structures 11 and are symmetrical left and right; the total length of the second stepped impedance slot line structure 12 is a quarter of the guided wave wavelength, so as to smoothly realize the transition of the signal from the slot line to the microstrip line. The first step gap line length L of the second stepped impedance gap line structure 12s92.5mm-3.0mm, width Ws8Is 0.2mm-0.6mm, and is not limited to L in this embodiments9Is 2.8mm, Ws1Is 0.4 mm; length L of second order gap lines10Is 5.0mm-9.0mm in width Ws9Is 4.0mm-7.0mm, and is not limited to L in this embodiments10Is 8.0mm, Ws1Is 5.0 mm.
The two U-shaped output microstrip feeder lines 3 are respectively positioned right above the two second stepped impedance slot line structures 12 and are bilaterally symmetrical so as to realize transition output of signals from the slot lines to the microstrip lines; the U-shaped output microstrip feeder line 3 and the U-shaped input microstrip feeder line 2 have the same size and structure and opposite directions.
The first uniform impedance slit line 13 is located between the two first L-shaped stepped impedance slit line structures 9; the second uniform impedance slit line 14 is located between the two second L-shaped stepped impedance slit line structures 11; the first uniform impedance slit line 13 and the second uniform impedance slit line 14 have the same width, and the width W thereoftIs 0.1mm-0.4mm, and is not limited in this example to WtIs 0.2 mm.
First isolation resistor R1Is bridged at the central position of the first uniform impedance gap line 13; second isolation resistor R2And crosses the center of the second uniform impedance slot line 14. The first isolation resistor R1Is 50-200 ohm, this embodiment is taken as but not limited to R1Is 100 ohm; the second isolation resistor R2Resistance value of 50ohm-200ohm this embodiment is taken but not limited to R2Is 100 ohm.
The effects of the present invention can be further illustrated by the following simulation and test.
Simulation actual measurement 1, respectively performing differential mode return loss on the differential power divider with the filter characteristic of the above embodiment
Sum and difference mode insertion loss
The simulation and actual measurement result of (2) is shown in fig. 4.
As can be seen from the simulation result of fig. 4, the working frequency band of this embodiment is 2.6GHz-3.0GHz, and the relative bandwidth is 14.3%; maximum differential mode return loss
Is 26 dB; minimum differential mode insertion loss
Is 3.5 dB; and a transmission zero point is respectively arranged at two sides of the passband and is respectively positioned at 2.36GHz and 3.24GHz, so that the selectivity is improved.
As can be seen from the actual measurement result in fig. 4, the working frequency band of this embodiment is 2.7GHz-3.0GHz, and the relative bandwidth is 10.5%; maximum differential mode return loss
Is 24 dB; minimum differential mode insertion loss
Is 3.3 dB; and a transmission zero point is respectively arranged at two sides of the pass band and is respectively positioned at 2.46GHz and 3.24GHz, so that the selectivity is improved.
Simulation actual measurement 2, respectively performing differential mode isolation on the differential power divider with the filtering characteristics of the above embodiment
The simulation and actual measurement result of (2) is shown in fig. 5.
It can be seen from the simulation results of fig. 5 that the differential mode isolation is within the range of the operating frequency band
Greater than or equal to 12dB, and good isolation between the two output ports is realized.
It can be seen from the actual measurement results in fig. 5 that the differential mode isolation is within the working frequency band
Greater than or equal to 15dB, and good isolation between the two output ports is realized.
Simulation actual measurement 3, which is to perform simulation and actual measurement of the amplitude balance and the phase balance of the differential power divider with filter characteristics according to the above embodiment, respectively, and the result is shown in fig. 6.
As can be seen from the simulation result of fig. 6, the amplitude difference between the two output ports is less than or equal to 0.2dB within the working frequency range; in the working frequency range, the phase difference of the signals of the two output ports is less than or equal to 2 degrees.
As can be seen from the simulation result of fig. 6, the amplitude difference between the two output ports is less than or equal to 0.3dB within the working frequency range; in the working frequency range, the phase difference of the signals of the two output ports is less than or equal to 3 degrees.
Simulation actual measurement 4, respectively performing common mode return loss on the differential ultra-wideband power divider based on the parallel coupling slot line structure of the above embodiment
And common mode insertion loss
The simulation and actual measurement were performed, and the results are shown in fig. 7.
From the simulation results of fig. 6, it can be seen that the common mode return loss is in the range of the operating frequency band
Less than or equal to 0.25dB, common mode insertion loss
Greater than or equal to 50dB, good common mode rejection is achieved.
From the actual measurement results in fig. 6, it can be seen that the common mode return loss is within the range of the operating frequency band
Less than or equal to 0.35dB, common mode insertion loss
Greater than or equal to 45dB, good common mode rejection is achieved.
The four simulation results are basically consistent with the actual measurement results.
Claims (10)
1. The differential power divider with the filtering characteristic comprises a micro-strip medium substrate (1) and a metal ground plate (4), wherein the upper surface of the micro-strip medium substrate (1) is provided with a U-shaped input micro-strip feeder (2), two U-shaped output micro-strip feeders (3), two first L-shaped stepped impedance micro-strip lines (5) and two second L-shaped stepped impedance micro-strip lines (10); the metal grounding plate (4) is positioned on the lower surface of the microstrip medium substrate (1), and is characterized in that:
a first stepped impedance gap line structure (7) and a T-shaped uniform impedance gap line structure (8) which are sequentially etched and connected are arranged on the metal grounding plate (4); two symmetrical first L-shaped stepped impedance slit line structures (9) are arranged at the tail ends of two branches of the T-shaped uniform impedance slit line structure (8); two symmetrical second L-shaped stepped impedance slit line structures (11) are arranged right in front of the two first L-shaped stepped impedance slit line structures (9); the tail ends of the second L-shaped stepped impedance slit line structures (11) are provided with second stepped impedance slit line structures (12);
the U-shaped input microstrip feeder line (2) is positioned right above the first stepped impedance slot line structure (7); the U-shaped output microstrip feeder line (3) is positioned right above each second stepped impedance slot line structure (12); the two first L-shaped stepped impedance microstrip lines (5) are respectively positioned right above each first L-shaped stepped impedance slot line structure (9); the two second L-shaped stepped impedance microstrip lines (10) are respectively positioned right above each second L-shaped stepped impedance slot line structure (11);
a first uniform impedance gap line (13) is arranged between the two first L-shaped stepped impedance gap line structures (9), and the center position of the first uniform impedance gap line (13) is bridged over a first isolation resistor R1(ii) a A second uniform impedance gap line (14) is arranged between the two second L-shaped stepped impedance gap line structures (11), and a second isolation resistor R is spanned at the central position of the second uniform impedance gap line (14)2。
2. The differential power divider with filter characteristics according to claim 1, wherein a stub-loaded resonator (6) is disposed between each first L-shaped stepped-impedance microstrip line (5) and the second L-shaped stepped-impedance microstrip line (10); the first L-shaped stepped impedance microstrip line (5) and the second L-shaped stepped impedance microstrip line (10) are symmetrical relative to the stub-loaded resonator (6).
3. The differential power divider with filter characteristics as claimed in claim 1, wherein said T-shaped uniform impedance slot line structure (8) is composed of a vertical uniform impedance slot line and two horizontal uniform impedance slot lines, so as to achieve an even distribution of input signal power.
4. Differential power divider with filter characteristics according to claim 1, characterized in that the microstrip dielectric substrate (1) is made of F4BM-2 material with dielectric constant of 2.2, size of 70mm x 48mm and thickness of 0.8 mm.
5. Differential power divider with filter characteristics according to claim 3, characterized in that one vertical line of uniform impedance slot of the T-shaped uniform impedance slot line structure (8) and two horizontal lines of uniform impedance slot of the same width W are of the same widths30.1mm-0.4mm, uniform impedance gap vertical line length Ls33.0mm-6.0mm, uniform impedance gap transverse line length Ls4Is 13.0mm-15.0 mm.
6. The differential power divider with filter characteristics as claimed in claim 1, wherein: the length L of the first-step slot line of the first L-shaped stepped impedance slot line structure (9)s52.0mm-4.0mm, width Ws4Is 0.1mm-0.3 mm; total length L of second-step gap lines6Is 12.0mm-14.0mm in width Ws5Is 0.8mm-1.2 mm.
7. The differential power divider with filter characteristics according to claim 1, characterized in that the total length L of the first-order microstrip line of the first L-shaped stepped-impedance microstrip line (5)313.0mm-15.5mm, width W3Is 0.9mm-1.5 mm; length L of the second order microstrip line4Is 14.5mm-16.5mm, width W4Is 0.3mm-0.6 mm.
8. Differential power divider with filter characteristics according to claim 2, characterized in that the total length L of each stub-loaded resonator (6)r40.0mm-45.0mm, width WrIs 0.4mm-0.6 mm; its loaded open-circuit branch length Lrt15.0-18.0mm, width WrtIs 0.8mm-1.4 mm.
9. Differential power divider with filter characteristics according to claim 1, characterized in that the total length L of the first-order slot lines of the second L-shaped stepped impedance slot line structure (11)s7Is 12.0mm-12.5mm in width Ws6Is 0.8mm-1.2 mm; length L of second order gap lines8Is 3mm-6mm, and has a width Ws7Is 0.1mm-0.3 mm.
10. The differential power divider with filter characteristics as claimed in claim 1, wherein:
the first uniform impedance slit line (13) and the second uniform impedance slit line (14) have the same width, and the width W of the first uniform impedance slit line and the second uniform impedance slit linetIs 0.1mm-0.4 mm;
the first isolation resistor R1The resistance value of (A) is 50-200 ohm;
the second isolation resistor R2Is 50 to 200 ohm.
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| CN109546272B (en) * | 2018-11-01 | 2020-08-04 | 西安电子科技大学 | Double-frequency differential band-pass filter |
| CN112350042B (en) * | 2020-11-20 | 2021-08-20 | 西安电子科技大学 | Single-ended to differential magic T with filtering characteristics |
| CN113540726B (en) * | 2021-06-09 | 2022-07-08 | 西安电子科技大学 | Differential double-frequency duplex power divider using novel matching network |
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