CN204190164U - The medical Laser Diode System of a kind of multi-wavelength - Google Patents
The medical Laser Diode System of a kind of multi-wavelength Download PDFInfo
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- CN204190164U CN204190164U CN201420599989.8U CN201420599989U CN204190164U CN 204190164 U CN204190164 U CN 204190164U CN 201420599989 U CN201420599989 U CN 201420599989U CN 204190164 U CN204190164 U CN 204190164U
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- 239000004065 semiconductor Substances 0.000 claims abstract description 184
- 238000007493 shaping process Methods 0.000 claims abstract description 33
- 230000008878 coupling Effects 0.000 claims abstract description 23
- 238000010168 coupling process Methods 0.000 claims abstract description 23
- 238000005859 coupling reaction Methods 0.000 claims abstract description 23
- 230000005540 biological transmission Effects 0.000 claims description 23
- 238000007598 dipping method Methods 0.000 claims description 6
- 238000001914 filtration Methods 0.000 claims description 6
- 230000001174 ascending effect Effects 0.000 claims description 3
- 239000000835 fiber Substances 0.000 claims description 3
- 230000003796 beauty Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 238000007747 plating Methods 0.000 abstract 1
- 238000001228 spectrum Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 2
- 208000012641 Pigmentation disease Diseases 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000035617 depilation Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002647 laser therapy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000001225 therapeutic effect Effects 0.000 description 1
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Abstract
The utility model proposes the medical Laser Diode System of a kind of multi-wavelength, comprise semiconductor laser group, wavelength coupling module and Shaping Module, by the color filter to the colour filter plating different size in wavelength coupling module, realize the laser-transmitting to specified wavelength or reflection, the laser finally reaching different wave length in noise spectra of semiconductor lasers group carries out the object of closing bundle.The laser that this system can realize multi-wavelength makes, for meeting complicated medical and beauty treatment demand, to simplify the treatment procedure of medical and beauty treatment simultaneously.
Description
Technical field
The utility model belongs to semiconductor laser field, is specifically related to the medical Laser Diode System of a kind of multi-wavelength.
Background technology
Semiconductor laser has that volume is little, lightweight, efficiency is high, the life-span is long, the advantages such as wave-length coverage is wide, has become the core devices that new century development is fast, achievement is many, Subject identity is wide, range of application is large.The key areas that laser medicine is applied as laser, development is also progressively ripe rapidly, and semiconductor laser relies on its advantage, is more and more applied in Medical Devices.
At present, semiconductor laser is at laser depilation, and the field such as laser beautifying and ophthalmologic operation enters ripe business application.Especially on beauty treatment circle, because the laser of different wave length has different penetration powers to skin, and can optionally act on different pigmentation disorder, laser is made to carry out treating for target and not affect the cell tissue of surrounding normal, therefore laser skin makeup is with determined curative effect, safe and reliable and be rooted in the hearts of the people.But current medical laser instrument often can only use a kind of wavelength over the course for the treatment of simultaneously, make therapeutic purpose comparatively single like this, when complicated medical demand, can only be realized by wavelength switching or replacing instrument and equipment, treatment procedure is comparatively complicated.
Utility model content
In order to solve the deficiencies in the prior art, the utility model proposes the medical Laser Diode System of a kind of multi-wavelength, both the mutual switching of single wavelength laser can have been realized, the laser that can realize again multi-wavelength makes, for meeting complicated medical and beauty treatment demand, to simplify the treatment procedure of medical and beauty treatment simultaneously.Concrete technical scheme is as follows:
Scheme one:
The medical Laser Diode System of a kind of multi-wavelength, by semiconductor laser group, wavelength coupling module and Shaping Module are formed, and described semiconductor laser group is made up of the semiconductor laser of n (n >=2) individual different wave length, n semiconductor laser stepped placement successively; Described wavelength coupling module is positioned on the light direction of semiconductor laser group, be made up of the filter plate equal with the semiconductor laser number in semiconductor laser group, n sheet filter plate is parallel to each other, each filter plate and semiconductor laser one_to_one corresponding are arranged, on the light direction laying respectively at corresponding semiconductor laser and be 45 ° of angles with the light direction of semiconductor laser; Described Shaping Module is positioned on the light direction of wavelength coupling module, comprises negative spherical mirror and expansion interface; 1st laser that semiconductor laser sends enters outgoing after Shaping Module after the 1st filter plate transmission, and the 2nd laser that semiconductor laser sends enters Shaping Module outgoing again after the 2nd filter plate transmission after the 1st filter plate reflection; The laser that m (2≤m≤n) individual semiconductor laser sends through m sheet filter plate reflection and after the transmission of m-2 sheet filter plate with the 1st laser that semiconductor laser sends the 1st filter plate place close bundle enter Shaping Module after outgoing, described m-2 sheet filter plate is that m-1 sheet is to the 2nd filter plate; Shaping Module can realize, to the homogenize of light beam, dispersing, zoom operation etc.
N semiconductor laser in described semiconductor laser group is placed successively according to wavelength is ascending, and bright dipping place of each semiconductor laser adds the beam divergence angle that collimating lens sent is compressed to 5-15 °, n semiconductor laser placement location need meet:
Wherein, S is the light path of the 1st laser that semiconductor laser sends to the 1st filter plate; S
1be the light path of the 2nd laser that semiconductor laser sends to the 2nd filter plate, S
2it is the 2nd laser beam that semiconductor laser sends light path to the 1st filter plate after the 2nd filter plate reflection; S
nbe the light path of the laser that sends of m (2≤m≤n) individual semiconductor laser to m sheet filter plate, S
mit is the laser beam that sends of m semiconductor laser light path to the 1st filter plate after the reflection of m sheet filter plate.
Described filter plate is coated with filtering film, the wavelength of n semiconductor laser is followed successively by λ from small to large
1, λ
2..., λ
m... λ
n, the plated film of the 1st filter plate need meet: be greater than λ
1+
Δthe beam reflection of λ wavelength, is less than λ
1+
Δthe light beam transmission of λ wavelength; The plated film of m (2≤m≤n) sheet filter plate need meet: be greater than λ
m+
Δthe light beam transmission of λ wavelength, is less than λ
m+
Δthe beam reflection of λ wavelength;
Δλ value is 15 ~ 50nm.
Scheme two:
The utility model proposes the medical Laser Diode System of a kind of multi-wavelength, by semiconductor laser group, wavelength coupling module and Shaping Module are formed, described semiconductor laser group is made up of an A semiconductor laser and the individual B semiconductor laser of y (y >=1), the light direction of the light direction of A semiconductor laser and y (y >=1) individual B semiconductor laser is orthogonal, described wavelength coupling module is positioned on the light direction of A semiconductor laser, be made up of the y sheet filter plate identical with B semiconductor laser number, and be parallel to each other between filter plate, each filter plate and B semiconductor laser one_to_one corresponding, lay respectively at the light beam sent of corresponding B semiconductor laser and A semiconductor laser send light beam point of intersection and with A semiconductor laser and B semiconductor laser light direction all in 45 ° of angles, described Shaping Module is positioned on the light direction of wavelength coupling module, comprises negative spherical mirror and expansion interface, the laser that A semiconductor laser sends enters outgoing after Shaping Module after y sheet filter plate successively transmission, and the laser that xth (1≤x≤y) individual B semiconductor laser sends is through the reflection of xth sheet filter plate and outgoing after entering Shaping Module after the light beam sent at xth sheet filter plate place and A semiconductor laser closes on Shu Houjing A semiconductor laser light direction residue filter plate transmission, residue filter plate on described A semiconductor laser light direction is that (x+1)th sheet is to y filter plate.
In described semiconductor laser group, A semiconductor laser and y B semiconductor laser are placed from small to large successively according to wavelength, and bright dipping place of each semiconductor laser adds the beam divergence angle that collimating lens sent is compressed to 5-15 °, A semiconductor laser and y B semiconductor laser placement location need meet:
Wherein, S
3the laser sent for A semiconductor laser to the light path of first filter plate, S
4be the light path of the laser that sends of first B semiconductor laser to first filter plate, S
xfor an xth laser that B semiconductor laser sends is to the light path of xth sheet filter plate, S
ythe laser sent for A semiconductor laser is to the light path of xth sheet filter plate.
Described filter plate is coated with filtering film, the wavelength of A semiconductor laser and n B semiconductor laser is followed successively by λ from small to large
0, λ
1, λ
2..., λ
x... λ
y, the plated film of xth sheet filter plate need meet: be less than λ
x-
Δthe light beam transmission of λ wavelength, is greater than λ
x-
Δthe beam reflection of λ wavelength;
Δλ value is 15 ~ 50nm.
The expansion interface of described Shaping Module can expand access fiber waveguide, promotes the hot spot uniformity; Or expansion interface places the 2nd piece of negative spherical mirror, manually regulate the distance of two pieces of negative lenses to realize zoom, obtain the hot spot of different size; Also can place beam expanding lens or collimating lens, optimize the size of hot spot.
Described semiconductor laser is single-emission-cavity semiconductor laser.
N semiconductor laser in semiconductor laser group in scheme one and the A semiconductor laser in scheme two and y B semiconductor laser also can be arranged in order according to wavelength from big to small, only need the plated film specification of the filter plate of simple change wavelength coupling module, the technical scheme identical with the utility model should be considered as.
The medical Laser Diode System of a kind of multi-wavelength in the utility model, has the following advantages:
1) wavelength that the medical Laser Diode System of the multi-wavelength in the utility model can realize in laser therapy switches and complex treatment, simplifies treatment procedure;
2) the medical Laser Diode System of the multi-wavelength in the utility model volume is little, and cost is low, and optical technology is simple;
3) the medical Laser Diode System of the multi-wavelength in the utility model is that single-chip opens the light, and when opening the light with multi-chip, spot size is just the same simultaneously, can realize zoom by expansion, and promote the uniformity, tolerance tolerance is higher.
Accompanying drawing explanation
Fig. 1 is the structural representation of the medical Laser Diode System of multi-wavelength of the present utility model.
Fig. 2 is the structural representation of a kind of multi-wavelength medical treatment Laser Diode System.
Drawing reference numeral illustrates: 1 is semiconductor laser group, 2 is wavelength coupling module, and 3 is Shaping Module, and 4 is first filter plate, 5 is A semiconductor laser, 6 is m semiconductor laser, and 7 is m sheet filter plate, and 8 is negative spherical mirror, 9 is expansion interface, 10 is xth sheet filter plate, and 11 is B semiconductor laser, and 12 is an xth B semiconductor laser.
Embodiment
Scheme one: Fig. 1 is the structural representation of the medical Laser Diode System of multi-wavelength of the present utility model, the medical Laser Diode System of a kind of multi-wavelength, by semiconductor laser group 1, wavelength coupling module 2 and Shaping Module 3 are formed, described semiconductor laser group 1 is made up of the semiconductor laser of n (n >=2) individual different wave length, n semiconductor laser stepped placement successively; Described wavelength coupling module 2 is positioned on the light direction of semiconductor laser group 1, be made up of the filter plate equal with the semiconductor laser number in semiconductor laser group 1, n sheet filter plate is parallel to each other, each filter plate and semiconductor laser one_to_one corresponding are arranged, on the light direction laying respectively at corresponding semiconductor laser and be 45 ° of angles with the light direction of semiconductor laser; Described Shaping Module 3 is positioned on the light direction of wavelength coupling module 2, comprises negative spherical mirror 8 and expansion interface 9; 1st laser that semiconductor laser sends enters 3 outgoing after Shaping Module after the 1st filter plate 4 transmission, and the 2nd laser that semiconductor laser sends enters Shaping Module 3 outgoing again after the 2nd filter plate transmission after the 1st filter plate 4 reflects; The laser that m (2≤m≤n) individual semiconductor laser 6 sends through m sheet filter plate 7 reflect and after the transmission of m-2 sheet filter plate with the 1st laser that semiconductor laser sends the 1st filter plate 4 place close bundle enter Shaping Module after outgoing, described m-2 sheet filter plate is that m-1 is to the 2nd filter plate; Shaping Module 3 can realize, to the homogenize of light beam, dispersing, zoom operation etc.
N semiconductor laser in described semiconductor laser group is placed successively according to wavelength is ascending, and bright dipping place of each semiconductor laser adds the beam divergence angle that collimating lens sent is compressed to 5-15 °, n semiconductor laser placement location need meet:
Wherein, S is the light path of the 1st laser that semiconductor laser sends to the 1st filter plate; S
1be the light path of the 2nd laser that semiconductor laser sends to the 2nd filter plate, S
2it is the 2nd laser beam that semiconductor laser sends light path to the 1st filter plate after the 2nd filter plate reflection; S
nbe the light path of the laser that sends of m (2≤m≤n) individual semiconductor laser to m sheet filter plate, S
mit is the laser beam that sends of m semiconductor laser light path to the 1st filter plate after the reflection of m sheet filter plate.
Described filter plate is coated with filtering film, the wavelength of n semiconductor laser is followed successively by λ from small to large
1, λ
2..., λ
m... λ
n, the plated film of the 1st filter plate need meet: be greater than λ
1+
Δthe beam reflection of λ wavelength, is less than λ
1+
Δthe light beam transmission of λ wavelength; The plated film of m (2≤m≤n) sheet filter plate need meet: be greater than λ
m+
Δthe light beam transmission of λ wavelength, is less than λ
m+
Δthe beam reflection of λ wavelength;
Δλ value is 15 ~ 50nm.
Scheme two: Fig. 2 is the structural representation of a kind of multi-wavelength medical treatment Laser Diode System, the medical Laser Diode System of a kind of multi-wavelength, by semiconductor laser group 1, wavelength coupling module 2 and Shaping Module 3 are formed, described semiconductor laser group is made up of an A semiconductor laser 5 and the individual B semiconductor laser 11 of y (y >=1), the light direction of the light direction of A semiconductor laser 5 and y (y >=1) individual B semiconductor laser 11 is orthogonal, described wavelength coupling module 2 is positioned on the light direction of A semiconductor laser 5, be made up of the y sheet filter plate identical with B semiconductor laser 11 number, and be parallel to each other between filter plate, each filter plate and B semiconductor laser one_to_one corresponding, lay respectively at the light beam sent of corresponding B semiconductor laser and A semiconductor laser 1 send light beam point of intersection and with A semiconductor laser and B semiconductor laser light direction all in 45 ° of angles, described Shaping Module 3 is positioned on the light direction of wavelength coupling module 1, comprises negative spherical mirror 8 and expansion interface 9, the laser that A semiconductor laser sends enters outgoing after Shaping Module after y sheet filter plate successively transmission, outgoing after the laser that xth (1≤x≤y) individual B semiconductor laser 12 sends enters Shaping Module after the residue filter plate transmission that xth sheet filter plate 10 reflects and the light beam sent at xth sheet filter plate 10 place and A semiconductor laser 1 closes on Shu Houjing A semiconductor laser 1 light direction, the residue filter plate on described A semiconductor laser 1 light direction is that (x+1)th sheet is to y sheet filter plate.
In described semiconductor laser group, A semiconductor laser 5 and y B semiconductor laser 11 are placed from small to large successively according to wavelength, and bright dipping place of each semiconductor laser adds the beam divergence angle that collimating lens sent is compressed to 5-15 °, A semiconductor laser 5 and y B semiconductor laser 11 placement location need meet:
Wherein, S
3the laser sent for A semiconductor laser 5 to the light path of first filter plate, S
4be the light path of the laser that sends of first B semiconductor laser to first filter plate, S
xfor an xth laser that B semiconductor laser 12 sends is to the light path of xth sheet filter plate 10, S
ythe laser sent for A semiconductor laser 5 is to the light path of xth sheet filter plate 10.
Described filter plate is coated with filtering film, the wavelength of A semiconductor laser 5 and n B semiconductor laser 11 is followed successively by λ from small to large
0, λ
1, λ
2..., λ
x... λ
y, the plated film of xth sheet filter plate 10 need meet: be less than λ
x-
Δthe light beam transmission of λ wavelength, is greater than λ
x-
Δthe beam reflection of λ wavelength;
Δλ value is 15 ~ 50nm.
The expansion interface of described Shaping Module can expand access fiber waveguide, promotes the hot spot uniformity; Or expansion interface places the 2nd piece of negative spherical mirror, manually regulate the distance of two pieces of negative lenses to realize zoom, obtain the hot spot of different size; Also can place beam expanding lens or collimating lens, optimize the size of hot spot.
Described semiconductor laser is single-emission-cavity semiconductor laser.
N semiconductor laser in semiconductor laser group in scheme one and the A semiconductor laser in scheme two and y B semiconductor laser also can be arranged in order according to wavelength from big to small, only need the plated film specification of the filter plate of simple change wavelength coupling module, the technical scheme identical with the utility model should be considered as.
Claims (8)
1. the medical Laser Diode System of multi-wavelength, it is characterized in that: by semiconductor laser group, wavelength coupling module and Shaping Module are formed, described semiconductor laser group is made up of the semiconductor laser of n (n >=2) individual different wave length, n semiconductor laser stepped placement successively; Described wavelength coupling module is positioned on the light direction of semiconductor laser group, be made up of the filter plate equal with the semiconductor laser number in semiconductor laser group, n sheet filter plate is parallel to each other, each filter plate and semiconductor laser one_to_one corresponding are arranged, on the light direction laying respectively at corresponding semiconductor laser and be 45 ° of angles with the light direction of semiconductor laser; Described Shaping Module is positioned on the light direction of wavelength coupling module, comprises negative spherical mirror and expansion interface; 1st laser that semiconductor laser sends enters outgoing after Shaping Module after the 1st filter plate transmission; The laser that m (2≤m≤n) individual semiconductor laser sends through m sheet filter plate reflection and after the transmission of m-2 sheet filter plate with the 1st laser that semiconductor laser sends the 1st filter plate place close bundle enter Shaping Module after outgoing.
2. the medical Laser Diode System of multi-wavelength, it is characterized in that: by semiconductor laser group, wavelength coupling module and Shaping Module are formed, described semiconductor laser group is made up of an A semiconductor laser and the individual B semiconductor laser of y (y >=1), the light direction of the light direction of A semiconductor laser and y (y >=1) individual B semiconductor laser is orthogonal, described wavelength coupling module is positioned on the light direction of A semiconductor laser, by with B semiconductor laser one to one y sheet filter plate form, and be parallel to each other between filter plate, lay respectively at the point of intersection that the light beam sent of corresponding B semiconductor laser and A semiconductor laser send light beam, and with A semiconductor laser and B semiconductor laser light direction all in 45 ° of angles, described Shaping Module is positioned on the light direction of wavelength coupling module, comprises negative spherical mirror and expansion interface, the laser that A semiconductor laser sends enters outgoing after Shaping Module after y sheet filter plate successively transmission, the laser that xth (1≤x≤y) individual B semiconductor laser sends through xth sheet filter plate reflection, and the light beam sent at xth sheet filter plate place and the A semiconductor laser residue filter plate transmission of closing on Shu Houjing A semiconductor laser light direction enter Shaping Module after outgoing.
3. the medical Laser Diode System of a kind of multi-wavelength according to claim 1, it is characterized in that: n semiconductor laser in described semiconductor laser group is placed successively according to wavelength is ascending, and bright dipping place of each semiconductor laser adds the beam divergence angle that collimating lens sent is compressed to 5-15 °, n semiconductor laser placement location need meet:
Wherein, S is the light path of the 1st laser that semiconductor laser sends to the 1st filter plate; S
1be the light path of the 2nd laser that semiconductor laser sends to the 2nd filter plate, S
2it is the 2nd laser beam that semiconductor laser sends light path to the 1st filter plate after the 2nd filter plate reflection; S
nbe the light path of the laser that sends of m (2≤m≤n) individual semiconductor laser to m sheet filter plate, S
mit is the laser beam that sends of m semiconductor laser light path to the 1st filter plate after the reflection of m sheet filter plate.
4. the medical Laser Diode System of a kind of multi-wavelength according to claim 1, it is characterized in that: described filter plate is coated with filtering film, the wavelength of n semiconductor laser is followed successively by λ from small to large
1, λ
2..., λ
m... λ
n, the plated film of the 1st filter plate need meet: be greater than λ
1+
Δthe beam reflection of λ wavelength, is less than λ
1+
Δthe light beam transmission of λ wavelength; The plated film of m (2≤m≤n) sheet filter plate need meet: be greater than λ
m+
Δthe light beam transmission of λ wavelength, is less than λ
m+
Δthe beam reflection of λ wavelength;
Δλ value is 15 ~ 50nm.
5. the medical Laser Diode System of a kind of multi-wavelength according to claim 2, it is characterized in that: in described semiconductor laser group, A semiconductor laser and y B semiconductor laser are placed from small to large successively according to wavelength, and bright dipping place of each semiconductor laser adds the beam divergence angle that collimating lens sent is compressed to 5-15 °, A semiconductor laser and y B semiconductor laser placement location need meet:
Wherein, S
3the laser sent for A semiconductor laser to the light path of first filter plate, S
4be the light path of the laser that sends of first B semiconductor laser to first filter plate, S
xfor an xth laser that B semiconductor laser sends is to the light path of xth sheet filter plate, S
ythe laser sent for A semiconductor laser is to the light path of xth sheet filter plate.
6. the medical Laser Diode System of a kind of multi-wavelength according to claim 2, it is characterized in that: described filter plate is coated with filtering film, the wavelength of A semiconductor laser and n B semiconductor laser is followed successively by λ from small to large
0, λ
1, λ
2..., λ
x... λ
y, the plated film of xth sheet filter plate need meet: be less than λ
x-
Δthe light beam transmission of λ wavelength, is greater than λ
x-
Δthe beam reflection of λ wavelength;
Δλ value is 15 ~ 50nm.
7. the medical Laser Diode System of a kind of multi-wavelength according to claims 1 or 2, is characterized in that: the expansion interface expansion access fiber waveguide of described Shaping Module or placement the 2nd piece of negative spherical mirror, or places beam expanding lens.
8. the medical Laser Diode System of a kind of multi-wavelength according to claims 1 or 2, is characterized in that: described semiconductor laser is single-emission-cavity semiconductor laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420599989.8U CN204190164U (en) | 2014-10-17 | 2014-10-17 | The medical Laser Diode System of a kind of multi-wavelength |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420599989.8U CN204190164U (en) | 2014-10-17 | 2014-10-17 | The medical Laser Diode System of a kind of multi-wavelength |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204190164U true CN204190164U (en) | 2015-03-04 |
Family
ID=52622136
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|---|---|---|---|
| CN201420599989.8U Expired - Lifetime CN204190164U (en) | 2014-10-17 | 2014-10-17 | The medical Laser Diode System of a kind of multi-wavelength |
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| Country | Link |
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| CN (1) | CN204190164U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108333787A (en) * | 2018-05-03 | 2018-07-27 | 无锡厦泰生物科技有限公司 | A kind of light path system of telescope tube for cytoanalyze |
| CN113381270A (en) * | 2021-04-21 | 2021-09-10 | 深圳市瑞沃德生命科技有限公司 | Laser and have its laser physiotherapy device |
| CN115347459A (en) * | 2022-08-19 | 2022-11-15 | 深圳市吉斯迪科技有限公司 | Laser output device of medical semiconductor laser |
-
2014
- 2014-10-17 CN CN201420599989.8U patent/CN204190164U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108333787A (en) * | 2018-05-03 | 2018-07-27 | 无锡厦泰生物科技有限公司 | A kind of light path system of telescope tube for cytoanalyze |
| CN113381270A (en) * | 2021-04-21 | 2021-09-10 | 深圳市瑞沃德生命科技有限公司 | Laser and have its laser physiotherapy device |
| CN115347459A (en) * | 2022-08-19 | 2022-11-15 | 深圳市吉斯迪科技有限公司 | Laser output device of medical semiconductor laser |
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Address after: 710077 Shaanxi 86 high power semiconductor laser Industrial Park, 56 high tech Zone, Xi'an, Shaanxi. Patentee after: FOCUSLIGHT TECHNOLOGIES INC. Address before: 710077 Shaanxi 86 high power semiconductor laser Industrial Park, 56 high tech Zone, Xi'an, Shaanxi. Patentee before: Xi'an Focuslight Technology Co., Ltd. |