CN204189782U - Novel semi-conductor diode structure - Google Patents
Novel semi-conductor diode structure Download PDFInfo
- Publication number
- CN204189782U CN204189782U CN201420748121.XU CN201420748121U CN204189782U CN 204189782 U CN204189782 U CN 204189782U CN 201420748121 U CN201420748121 U CN 201420748121U CN 204189782 U CN204189782 U CN 204189782U
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- CN
- China
- Prior art keywords
- support plate
- connection block
- insulation support
- radiator connection
- conductive radiator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000009413 insulation Methods 0.000 claims abstract description 78
- 238000005476 soldering Methods 0.000 claims abstract description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
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Abstract
The utility model discloses a kind of novel semi-conductor diode structure, comprise two groups of double hyer insulation supporting brackets of radiating bottom plate, conductive radiator Connection Block and fixing conductive radiator Connection Block, semiconductor diode chip is welded on the end face of radiating bottom plate by soldering paste, the groove of the Width of through first insulation support plate is provided with in the middle part of the faying face of the first insulation support plate and the second insulation support plate, the lateral surface that two, the lower end of conductive radiator Connection Block is relative is convexly equipped with fixed head respectively, and fixed head is clamped in groove.The utility model; two, its lower end fixed head inserts in the groove in the middle part of two groups of double hyer insulation supporting brackets by conductive radiator Connection Block; welded by soldering paste between double hyer insulation supporting bracket; in use; the power that conductive radiator Connection Block is subject to can pass to radiating bottom plate effectively by fixed head; can preventing the diode chip for backlight unit when installing or work from damaging because of stressed, effectively protecting diode chip for backlight unit.
Description
Technical field
The utility model relates to diode structure, is specifically related to novel semi-conductor diode structure.
Background technology
Diode also known as crystal diode, it be a kind of can the electronic device of unidirectional conduction current, have a wide range of applications at electronic applications as the simplest semiconductor device of structure.The diode chip for backlight unit of traditional diode is welded on the conductive plate with screw hole respectively, usually be all weld with conductive plate with scolding tin, isolate by the epoxy resin of embedding between conductive plate and be connected, the stress-bearing capability of the diode chip for backlight unit of this structure is very poor, when installing or work, diode chip for backlight unit is easy to damage because of stressed, poor reliability.
Utility model content
Technical problem to be solved in the utility model is that existing diode structure stress-bearing capability is poor, the problem of poor reliability.
In order to solve the problems of the technologies described above, the technical scheme that the utility model adopts is to provide a kind of novel semi-conductor diode structure, comprise radiating bottom plate, conductive radiator Connection Block and two groups of double hyer insulation supporting brackets for fixing described conductive radiator Connection Block, semiconductor diode chip is welded on the end face of described radiating bottom plate, often organize described double hyer insulation supporting bracket and comprise the first insulation support plate and the second insulation support plate that are oppositely arranged up and down, groove is provided with in the middle part of the faying face of described first insulation support plate and described second insulation support plate, the Width of through described first insulation support plate of described groove is arranged, the lateral surface that two, the lower end of described conductive radiator Connection Block is relative is convexly equipped with fixed head respectively, described fixed head is clamped in described groove.
In such scheme, groove is equipped with in the middle part of the bottom surface of described first insulation support plate and the end face of described second insulation support plate, the Width of through described first insulation support plate of described groove or described second insulation support plate is arranged, two described groove institute's clip spaces and described fixed head suitable.
In such scheme, welded by soldering paste between described first insulation support plate and described second insulation support plate.
In such scheme, the both sides described radiating bottom plate being positioned at described conductive radiator Connection Block have a pair first screwed holes, and the two ends of described double hyer insulation supporting bracket have second screwed hole suitable with described first screwed hole.
In such scheme, the end face of described conductive radiator Connection Block is provided with screwed hole, and wire inserts described conducting screw hole and fixes.
In such scheme, described conductive radiator Connection Block by positioned opposite to each other two cylinders and two side planes one-body molded, described fixed head protrudes from the lower end of two described side planes, and the side of described side plane and described double hyer insulation supporting bracket fits tightly.
In such scheme, the bottom surface of described conductive radiator Connection Block is provided with mates with semiconductor diode chip the salient point be connected.
In such scheme, described second insulation support plate is strip, and the middle part of described first insulation support plate is strip, and two ends are respectively to projecting inward formation protuberance, and the cylinder of the medial surface of described protuberance and described conductive radiator Connection Block is suitable.
The utility model, in the groove that the middle part of the fixed head of projection respectively on lateral surface relative for two, conductive radiator Connection Block lower end being inserted the opposite face of two groups of double hyer insulation supporting brackets is formed, welded by soldering paste between double hyer insulation supporting bracket, in use, the power that conductive radiator Connection Block is subject to can pass to radiating bottom plate effectively by fixed head, can preventing the diode chip for backlight unit when installing or work from damaging because of stressed, effectively protecting diode chip for backlight unit; Meanwhile, this design, structure is simple, easy for installation, and the spacing conductive radiator Connection Block that can effectively prevent of groove rocks, and substantially increases the reliability of diode chip for backlight unit electrical connection.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model when single conductive radiator Connection Block is housed;
Fig. 2 is the exploded view of the utility model when single conductive radiator Connection Block is housed;
Fig. 3 is in the utility model, the another kind of structural representation of the first insulation support plate.
Embodiment
As shown in Figure 1 and Figure 2, the utility model provides a kind of novel semi-conductor diode structure, comprise radiating bottom plate 10, conductive radiator Connection Block 20 and two groups of double hyer insulation supporting brackets 30 for fixing conductive radiator Connection Block 20, semiconductor diode chip 50 is welded on the end face of radiating bottom plate 10 by soldering paste.
The lateral surface that two, the lower end of conductive radiator Connection Block 20 is relative is convexly equipped with fixed head 22 respectively, the bottom surface of conductive radiator Connection Block 20 is provided with mates with semiconductor diode chip the salient point be connected, and semiconductor diode chip 50 is welded to connect by soldering paste with the salient point on conductive radiator Connection Block 20 bottom surface.The end face of conductive radiator Connection Block 20 is provided with screwed hole 21, and wire is inserted in screwed hole 21, thus is formed to conduct electricity with diode chip for backlight unit 50 and be connected.
Double hyer insulation supporting bracket 30 comprises the first insulation support plate 31 and the second insulation support plate 32 be oppositely arranged up and down, the joint portion of the first insulation support plate 31 and the second insulation support plate 32 is provided with the groove suitable with fixed head 22, fixed head 22 is inserted in groove, second insulation support plate 32 is welded on radiating bottom plate 10 by soldering paste, thus is fixed by conductive radiator Connection Block 20.
Double hyer insulation supporting bracket 30 can adopt following two kinds of versions.
The structure of the first double hyer insulation supporting bracket 30 is as follows: the middle part of the opposite face of the first insulation support plate 31 and the second insulation support plate 32 is respectively equipped with the first groove 34 and the second groove 35 be oppositely arranged, first the groove 34 and Width that run through first insulation support plate 31 and second insulation support plate 32 identical with the second groove 35 structure is arranged, the space that the first groove 34 and the second groove 35 are formed and fixed head 22 suitable.
Both sides radiating bottom plate 10 being positioned at conductive radiator Connection Block 20 have a pair first screwed holes 11, the two ends of double hyer insulation supporting bracket 30 have second screwed hole 33 suitable with the first screwed hole 11, double hyer insulation supporting bracket 30 is fixed on radiating bottom plate 10 by screw bolt passes first screwed hole 11 and the second screwed hole 33, fixing more firm.Two groups of double hyer insulation supporting brackets 30 are arranged in the both sides of conductive radiator Connection Block 20 symmetrically, and fixed head 22 is clamped in the space of the first groove 34 and the formation of the second groove 35, first insulation support plate 31 and the second insulation support plate 32 are welded by soldering paste, and form an overall structure with conductive radiator Connection Block 20, conductive radiator Connection Block 20 is placed on the end face of semiconductor diode chip 50, and two groups of double hyer insulation supporting brackets 30 are fixed on the end face of radiating bottom plate 10 by screw 40.
Conductive radiator Connection Block 20 by positioned opposite to each other two cylinders 23 and two side planes 24 one-body molded, fixed head 22 protrudes from the lower end of two side planes 24 of conductive radiator Connection Block 20, in the process be connected with two groups of double hyer insulation supporting brackets 30, fixed head 22 is clamped in the space of the first groove 34 and the formation of the second groove 35, two side planes 24 of conductive radiator Connection Block 20 fit tightly with the side of double hyer insulation supporting bracket 30 simultaneously, improve the reliability of connection, improve stress-bearing capability.
The second double hyer insulation supporting bracket and the difference of the first are, only in the middle part of the end face of the bottom surface of the first insulation support plate 31 or the second insulation support plate 32, be provided with a groove, the contact-making surface of another block insulation support plate is plane, this kind of structure, owing to only needing processing groove, therefore can cut down finished cost.
In addition, in order to reduce the volume of double hyer insulation supporting bracket 30, first insulation support plate 31 and the second insulation support plate 32 can be designed to different structures, as shown in Figure 3, second insulation support plate 32 is designed to strip, the middle part of the first insulation support plate 31 is strip, and two ends are respectively to projecting inward formation protuberance 36, and the cylinder of the medial surface of protuberance 36 and conductive radiator Connection Block 20 is suitable.This design, is equivalent to the threaded joints on the first insulation support plate 31 to strengthen, when the second insulation support plate 32 constancy of volume, improves the intensity be threaded.
The utility model, in the groove that the middle part that the fixed head of projection respectively on lateral surface relative for two, its lower end is inserted the opposite face of two groups of double hyer insulation supporting brackets by conductive radiator Connection Block is formed, welded by soldering paste between double hyer insulation supporting bracket, in use, when conductive radiator Connection Block being subject to external force, external force can pass to radiating bottom plate by fixed head through double hyer insulation supporting bracket effectively, what reduce conductive radiator Connection Block is subject to force intensity, effectively protect diode chip for backlight unit, stability and safety is reliable, structure is simple, easy for installation, effectively prevent the situation that diode chip for backlight unit damages because of stressed when installing or work to occur, there is very high practical value.
The utility model is not limited to above-mentioned preferred forms, and anyone should learn the structural change made under enlightenment of the present utility model, and every have identical or close technical scheme with the utility model, all falls within protection range of the present utility model.
Claims (8)
1. novel semi-conductor diode structure, comprise radiating bottom plate, conductive radiator Connection Block and two groups of double hyer insulation supporting brackets for fixing described conductive radiator Connection Block, semiconductor diode chip is welded on the end face of described radiating bottom plate, it is characterized in that, often organize described double hyer insulation supporting bracket and comprise the first insulation support plate and the second insulation support plate that are oppositely arranged up and down, groove is provided with in the middle part of the faying face of described first insulation support plate and described second insulation support plate, the Width of through described first insulation support plate of described groove is arranged, the lateral surface that two, the lower end of described conductive radiator Connection Block is relative is convexly equipped with fixed head respectively, described fixed head is clamped in described groove.
2. novel semi-conductor diode structure as claimed in claim 1, it is characterized in that, groove is equipped with in the middle part of the bottom surface of described first insulation support plate and the end face of described second insulation support plate, the Width of through described first insulation support plate of described groove or described second insulation support plate is arranged, two described groove institute's clip spaces and described fixed head suitable.
3. novel semi-conductor diode structure as claimed in claim 1, be is characterized in that, welded between described first insulation support plate and described second insulation support plate by soldering paste.
4. novel semi-conductor diode structure as claimed in claim 1, it is characterized in that, the both sides described radiating bottom plate being positioned at described conductive radiator Connection Block have a pair first screwed holes, and the two ends of described double hyer insulation supporting bracket have second screwed hole suitable with described first screwed hole.
5. novel semi-conductor diode structure as claimed in claim 1, it is characterized in that, the end face of described conductive radiator Connection Block is provided with screwed hole, and wire inserts described conducting screw hole and fixes.
6. novel semi-conductor diode structure as claimed in claim 1, it is characterized in that, described conductive radiator Connection Block by positioned opposite to each other two cylinders and two side planes one-body molded, described fixed head protrudes from the lower end of two described side planes, and the side of described side plane and described double hyer insulation supporting bracket fits tightly.
7. novel semi-conductor diode structure as claimed in claim 6, it is characterized in that, the bottom surface of described conductive radiator Connection Block is provided with mates with semiconductor diode chip the salient point be connected.
8. novel semi-conductor diode structure as claimed in claim 6, it is characterized in that, described second insulation support plate is strip, the middle part of described first insulation support plate is strip, two ends are respectively to projecting inward formation protuberance, and the cylinder of the medial surface of described protuberance and described conductive radiator Connection Block is suitable.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420748121.XU CN204189782U (en) | 2014-12-02 | 2014-12-02 | Novel semi-conductor diode structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420748121.XU CN204189782U (en) | 2014-12-02 | 2014-12-02 | Novel semi-conductor diode structure |
Publications (1)
Publication Number | Publication Date |
---|---|
CN204189782U true CN204189782U (en) | 2015-03-04 |
Family
ID=52621757
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201420748121.XU Expired - Fee Related CN204189782U (en) | 2014-12-02 | 2014-12-02 | Novel semi-conductor diode structure |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN204189782U (en) |
-
2014
- 2014-12-02 CN CN201420748121.XU patent/CN204189782U/en not_active Expired - Fee Related
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150304 |