CN204179073U - Semiconductor module block assembly and the air-conditioning with it - Google Patents
Semiconductor module block assembly and the air-conditioning with it Download PDFInfo
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- CN204179073U CN204179073U CN201420532792.2U CN201420532792U CN204179073U CN 204179073 U CN204179073 U CN 204179073U CN 201420532792 U CN201420532792 U CN 201420532792U CN 204179073 U CN204179073 U CN 204179073U
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- metal substrate
- platform part
- resin bed
- semiconductor module
- radiator
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Abstract
The utility model discloses a kind of semiconductor module block assembly and have its air-conditioning, semiconductor module block assembly comprises: radiator, and the upper surface of radiator is provided with at least one platform part protruding upward; If on a heat sink and cover the resin bed of the upper surface of platform part; First metal substrate, a part for the first metal substrate is located between the upper surface of platform part and resin bed, and another part stretches out resin bed; Be located between the lower surface of the first metal substrate and the upper surface of platform part to be connected the insulation connecting layer of the first metal substrate and platform part; Be located at the second metal substrate in resin bed, the second metal substrate and the spaced apart setting of the first metal substrate; And semiconductor device, the upper surface that semiconductor device is located at the first metal substrate is electrically connected with the second metal substrate.According to semiconductor module block assembly of the present utility model, heat dissipation path is more direct, and radiating rate is faster, and semiconductor device not easily gathers more heat, and not easily occur aging, useful life is longer.
Description
Technical field
The utility model relates to technical field of refrigeration equipment, more specifically, relates to a kind of semiconductor module block assembly and has its air-conditioning.
Background technology
In the related, the structure of power semiconductor modular is that multiple semiconductor device is arranged on conductive radiator substrate, then by moulding resin plastic packaging.First the heat that semiconductor device produces is delivered on conductive radiator substrate, and then is dissipated on the radiator that power semiconductor modular adheres to outward through resin bed, between power semiconductor modular with radiator by heat radiation bonding agent or analog bonding.The radiating efficiency of this kind of radiator structure is very low, and the accumulation of heat can accelerating power module aging and finally cause Module Fail.
Utility model content
The utility model is intended to solve one of technical problem in correlation technique at least to a certain extent.For this reason, the utility model proposes a kind of semiconductor module block assembly, the good heat dissipation effect of described semiconductor module block assembly.
The utility model also proposed a kind of air-conditioning with above-mentioned semiconductor module block assembly.
According to semiconductor module block assembly of the present utility model, comprising: radiator, the upper surface of described radiator is provided with at least one platform part protruding upward; Resin bed, described resin bed to be located on described radiator and to cover the upper surface of described platform part; First metal substrate, a part for described first metal substrate is located between the upper surface of described platform part and described resin bed, and another part of described first metal substrate stretches out described resin bed; Insulation connecting layer, described insulation connecting layer is located between the lower surface of described first metal substrate and the upper surface of described platform part to be connected described first metal substrate and described platform part; Second metal substrate, described second metal substrate is located in described resin bed, described second metal substrate and the spaced apart setting of described first metal substrate; And semiconductor device, the upper surface that described semiconductor device is located at described first metal substrate is electrically connected with described second metal substrate.
According to semiconductor module block assembly of the present utility model, the heat of semiconductor device can directly be passed on the first metal substrate, then be directly passed on radiator by insulation connecting layer and dispel the heat, the heat dissipation path of this kind of radiator structure is more direct, radiating rate is faster, and the heat on semiconductor device can be passed to faster on radiator and dispel the heat, and makes the heat loss on semiconductor device gather more heat sooner and not easily, thus not easily occurring aging, useful life is longer.
In addition, following additional technical characteristic can also be had according to semiconductor module block assembly of the present utility model:
According to an embodiment of the present utility model, the upper surface of described platform part is formed as plane, and described first metal substrate is located on the upper surface of described platform part in the horizontal direction.
According to an embodiment of the present utility model, the area that described first metal substrate stretches out the part of described resin bed is greater than the area that described first metal substrate is positioned at described resin bed.
According to an embodiment of the present utility model, the upper surface of described radiator is provided with two described platform part arranged spaced apart, the orthographic projection of described resin bed on described radiator covers and exceeds the region between two described platform part and two described platform part, each described platform part is respectively equipped with described first metal substrate, be provided with two described second metal substrates between two described first metal substrates, each described first metal substrate is respectively equipped with a described semiconductor device.
According to an embodiment of the present utility model, the upper surface of two described platform part is concordant, and two described first metal substrates are identical with the level height of two described second metal substrates.
According to an embodiment of the present utility model, the region between two described platform part of described resin bed is provided with outstanding boss downwards, and the lower surface of described boss only supports the upper surface between two described platform part of described radiator.
According to an embodiment of the present utility model, the lower surface of described boss is formed as serrated face, and the upper surface between two described platform part of described radiator is formed as the serrated face corresponding with the lower surface of described boss.
According to an embodiment of the present utility model, upper surface and the side wall surface of described platform part are provided with dielectric film.
According to an embodiment of the present utility model, described insulation connecting layer is solid particles adhesion layer.
According to the air-conditioning of the utility model second aspect, comprise the semiconductor module block assembly according to the utility model first aspect.
Additional aspect of the present utility model and advantage will part provide in the following description, and part will become obvious from the following description, or be recognized by practice of the present utility model.
Accompanying drawing explanation
Fig. 1 is the structural representation of the semiconductor module block assembly according to the utility model embodiment, does not wherein comprise resin bed;
Fig. 2 is the cutaway view of the semiconductor module block assembly according to the utility model embodiment.
Reference numeral:
Semiconductor module block assembly 100;
Radiator 10; Platform part 11;
Semiconductor device 20;
Resin bed 30; Boss 31; Notch 32;
First metal substrate 40; First metallic plate 41; Second metallic plate 42; Connecting portion 43;
Second metal substrate 50;
Insulation connecting layer 60;
Lead-in wire 70.
Embodiment
Be described below in detail embodiment of the present utility model, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Be exemplary below by the embodiment be described with reference to the drawings, be intended to for explaining the utility model, and can not be interpreted as restriction of the present utility model.
In description of the present utility model, it will be appreciated that, term " " center ", " longitudinal direction ", " transverse direction ", " length ", " width ", " thickness ", " on ", D score, " front ", " afterwards ", " vertically ", " level ", " top ", " end " " interior ", " outward ", orientation or the position relationship of the instruction such as " radial direction " are based on orientation shown in the drawings or position relationship, only the utility model and simplified characterization for convenience of description, instead of indicate or imply that the device of indication or element must have specific orientation, with specific azimuth configuration and operation, therefore can not be interpreted as restriction of the present utility model.
In addition, term " first ", " second " only for describing object, and can not be interpreted as instruction or hint relative importance or imply the quantity indicating indicated technical characteristic.Thus, be limited with " first ", the feature of " second " can express or impliedly comprise one or more these features.In description of the present utility model, the implication of " multiple " is two or more, unless otherwise expressly limited specifically.
In the utility model, unless otherwise clearly defined and limited, fisrt feature second feature " on " or D score can be that the first and second features directly contact, or the first and second features are by intermediary indirect contact.And, fisrt feature second feature " top " and " above " can be fisrt feature directly over second feature or oblique upper, or only represent that fisrt feature level height is higher than second feature.Fisrt feature second feature " below " and " below " can be fisrt feature immediately below second feature or tiltedly below, or only represent that fisrt feature level height is less than second feature.
In the utility model, unless otherwise clearly defined and limited, the term such as term " installation ", " being connected ", " connection ", " fixing " should be interpreted broadly, and such as, can be fixedly connected with, also can be removably connect, or integral; Can be directly be connected, also indirectly can be connected by intermediary, can be the connection of two element internals or the interaction relationship of two elements.For the ordinary skill in the art, the concrete meaning of above-mentioned term in the utility model can be understood as the case may be.
The semiconductor module block assembly 100 according to the utility model embodiment is described in detail below in conjunction with accompanying drawing.
Shown in seeing figures.1.and.2, comprise radiator 10, resin bed 30, first metal substrate 40, second metal substrate 50, insulation connecting layer 60 and semiconductor device 20 according to the semiconductor module block assembly 100 of the utility model embodiment.In other words, semiconductor module block assembly 100 comprises semiconductor module and radiator 10, and semiconductor module comprises resin bed 30, first metal substrate 40, second metal substrate 50, insulation connecting layer 60 and semiconductor device 20.Radiator 10 can dispel the heat to this semiconductor module.
The upper surface of radiator 10 is provided with at least one platform part 11, and platform part 11 projects upwards over the upper surface of radiator 10.Resin bed 30 is located on radiator 10, and resin bed 30 covers on the upper surface of platform part 11.A part for first metal substrate 40 is located between the upper surface of platform part 11 and resin bed 30, and another part of the first metal substrate 40 stretches out resin bed 30.Second metal substrate 50 is located in resin bed 30, the second metal substrate 50 and the spaced apart setting of the first metal substrate 40.
Between the lower surface that insulation connecting layer 60 is located at the first metal substrate 40 and the upper surface of platform part 11, the first metal substrate 40 is fixed in platform part 11 by insulation connecting layer 60, makes the first metal substrate 40 and realizes between radiator 10 insulating being connected.Semiconductor device 20 is located on the upper surface of the first metal substrate 40, and semiconductor device 20 is electrically connected with the second metal substrate 50.
According to the semiconductor module block assembly 100 of the utility model embodiment, by arranging platform part 11 on radiator 10, and the first metal substrate 40 be connected with semiconductor device 20 is located in platform part 11 by insulation connecting layer 60, the heat of semiconductor device 20 can directly be passed on the first metal substrate 40, is then directly passed on radiator 10 by insulation connecting layer 60 and dispels the heat.Radiator structure on this semiconductor module block assembly 100 is reasonable, and heat dissipation path is more direct, and radiating rate is faster, heat on semiconductor device 20 can be passed on radiator 10 faster, make semiconductor device 20 not easily gather more heat, not easily occur aging, useful life is longer.
In the related, the part being provided with semiconductor device of the first metal substrate in semiconductor module is embedded completely in resin bed, is separated with thick resin bed between making between the first metal substrate and radiator.The dissipation path of the heat on semiconductor device is: first the heat on semiconductor device is passed to the first metal substrate, is then passed to resin bed, then is passed to the adhesive layer between semiconductor module and radiator, finally just can be passed on radiator.
And according to the semiconductor module block assembly 100 of the utility model embodiment, the first metal substrate 40 being provided with semiconductor device 20 is not embedded completely in resin bed 30, the lower surface of the first metal substrate 40 is positioned at outside resin bed 30, greatly improves heat-sinking capability.And the first metal substrate 40 is directly connected with radiator 10 by insulation connecting layer 60, make semiconductor device 20 when dispelling the heat, the heat be passed on the first metal substrate 40 directly can be passed to radiator 10 by insulation connecting layer 60, eliminate the process dissipated in resin bed 30, between guarantee first metal substrate 40 and radiator 10 while insulating properties, make the path of heat dissipation shorter, more direct, radiating rate is faster, under the prerequisite ensureing semiconductor module insulation and normal function, substantially increase the radiating efficiency of semiconductor module.
As shown in Figure 2, the first metal substrate 40 and the second metal substrate 50 are by resin bed 30 plastic packaging.Wherein, the back side of the first metal substrate 40 is exposed to outside semiconductor module, part first metal substrate 40 is embedded in resin bed 30 and encapsulates, semiconductor device 20, such as power component be arranged on the first metal substrate 40 relative front (upper surface shown in Fig. 2) and completely in embedded resin layer 30.The opposite back side (lower surface shown in Fig. 2) of the first metal substrate 40 contacts connected by one deck insulation connecting layer 60 with radiator 10.
Be understandable that, resin bed 30 should be the resin bed 30 with electrical insulation capability, to play the effect with external insulation and insulation blocking to semiconductor module.
Insulation connecting layer 60 can be nonconductive adhesive layer, and namely the first metal substrate 40 is bonded on radiator 10 by insulating binder.Electrical insulating property and the bonding force of insulating binder make the opposite back side be directly exposed to outside resin bed 30 of the first metal substrate 40 directly can be connected with radiator 10 by this nonconductive adhesive layer.
Wherein, the insulating properties adhesive forming nonconductive adhesive layer can be solid particle mixture.That is, insulation connecting layer 60 can be solid particles adhesion layer.Such as silicone adhesive, silicone grease epobond epoxyn etc.Advantageously, for improving the capacity of heat transmission of this insulation connecting layer 60, the fillers such as silicon dioxide, boron, oxycarbide can be added wherein.
As shown in Figure 2, the upper surface of platform part 11 can be formed as plane, and the first metal substrate 40 can be located on the upper surface of platform part 11 in the horizontal direction.Because platform part 11 exceeds the upper surface of radiator 10, make when the first metal substrate 40 is located in platform part 11 in the horizontal direction, the part that first metal substrate 40 is not connected with platform part 11 can be spaced apart with the upper surface of radiator 10, namely there is certain spacing between the two, thus make the first metal substrate 40 can and radiator 10 between keep insulating and radiating effect is better.
Wherein, for the first metal substrate 40, the area stretching out the part of resin bed 30 can be greater than the area of the part being positioned at resin bed 30.Further, first metal substrate 40 can comprise the first metallic plate 41 and the second metallic plate 42, first metallic plate 41 is embedded in resin bed 30, the part be positioned at below the first metallic plate 41 of resin bed 30 is formed as notch 32, thus make the lower surface of the first metallic plate 41 can be exposed to outside resin bed 30, to play good thermolysis.
Semiconductor device 20 to be located in resin bed 30 and to be positioned on the upper surface of the first metallic plate 41.Second metallic plate 42 is positioned at outside resin bed 30, and one end of the second metallic plate 42 is embedded completely in resin bed 30 and this one end is connected with the first metallic plate 41.Second metallic plate 42 other end be positioned at outside resin bed 30 is provided with the connecting portion 43 upwards extended.Similarly, the first metallic plate 41 and the second metal substrate 50 also can be provided with stretch out resin bed 30 connecting portion 43.Semiconductor module block assembly 100 is connected with miscellaneous part such as circuit board by connecting portion 43.
As shown in Figure 2, the lateral dimension (size extended in the horizontal direction) resin bed 30 being positioned at the notch 32 below the first metallic plate 41 can be greater than the lateral dimension of platform part 11, when the first metallic plate 41 is fixed in platform part 11 by insulation connecting layer 60, the lower surface of the first metallic plate 41 also has the part outside being exposed to, thus the heat making semiconductor device 20 be passed on the first metallic plate 41 can be passed to radiator 10 by insulation connecting layer 60, also directly be passed in environment by expose portion simultaneously and go, radiating effect is better.
As shown in Figure 2, can be provided with two platform part, 11, two platform part 11 arranged spaced apart for the upper surface of radiator 10.The orthographic projection of resin bed 30 on radiator 10 covers the region between two platform part 11 and two platform part 11, and the area of the orthographic projection of resin bed 30 on radiator 10 is greater than the area sum in the region between two platform part 11 and two platform part 11.
Each platform part 11 is respectively equipped with between first metal substrate 40, two the first metal substrates 40 and is provided with two the second metal substrates 50, each first metal substrate 40 is respectively equipped with a semiconductor device 20.That is, platform part 11 comprises two, and each platform part 11 is provided with first metal substrate 40, and this first metal substrate 40 is provided with a semiconductor device 20.There are semiconductor device 20, two semiconductor device 20 of two spaced apart settings by two lead-in wires 70 electrical connection in a semiconductor module.Particularly, one end of each lead-in wire 70 connects a semiconductor device 20, and the middle part that the other end connects another semiconductor device 20, two lead-in wire 70 is connected to two the second metal substrates 50 respectively.
The upper surface of two platform part 11 can concordantly be arranged, and two the first metal substrates 40 can be identical with the level height of two the second metal substrates 50.That is, the first metal substrate 40 and the second metal substrate 50 can be in same level.
Be understandable that; this semiconductor module block assembly 100 is provided with the first metal substrate 40 and the second metal substrate two metal substrates are only exemplarily described; the quantity of metal substrate can also have two or more, and this kind or the similar structures with two or more metal substrate also will within protection ranges of the present utility model.
In embodiments more of the present utility model, the upper surface of platform part 11 and side wall surface can be provided with dielectric film (not shown), with ensure radiator 10 electrical insulating property and and the first metal substrate 40 between insulating properties, improve use fail safe.The kind of dielectric film can be selected multiple, and such as, dielectric film can be aluminum oxide film.
As shown in Figure 2, the region between two platform part 11 of resin bed 30 can be provided with boss 31, and boss 31 protrudes past the lower surface of resin bed 30 downwards.The lower surface of boss 31 only supports on the upper surface between two platform part 11 of radiator 10.Thus, when assembling semiconductor module and radiator 10, in the process that boss 31 is fitted to radiator 10, platform part 11 extruding insulation articulamentum 60 can be made, make bridging agent unnecessary in insulation connecting layer 60, such as adhesive etc. are extruded, and make the thickness of insulation connecting layer 60 less.
Simultaneously, boss 31 coordinates the distance that can also ensure between the first metal substrate 40 and radiator 10 with radiator 10, thus ensure that the thickness of insulation connecting layer 60, prevent the bridging agent in insulation connecting layer 60 to be extruded completely, make the first metal substrate 40 can realize firmly being connected with radiator 10.
As shown in Figure 2, the lower surface of boss 31 can be formed as serrated face, and the upper surface between two platform part 11 of radiator 10 can be formed as the serrated face corresponding with the lower surface of boss 31.When semiconductor module and radiator 10 are assembled together, the upper surface of radiator 10 can realize jigsaw fit with the lower surface of boss 31, and radiator 10 becomes large with the contact area of boss 31.Specifically, area of dissipation can increase twice, substantially increases the heat dispersion of semiconductor module block assembly 100.
Meanwhile, insulation connecting layer 60 can be made to be squeezed when boss 31 and radiator 10 jigsaw fit, ensure that the thickness of insulation connecting layer 60 is moderate.When insulation connecting layer 60 is adhesive phase, after boss 31 and radiator 10 jigsaw fit, unnecessary adhesive can be extruded, thus ensure that the thickness of nonconductive adhesive layer is moderate, ensure adhesive strength and heat-conducting effect.
In addition, between the serrated face of boss 31 and the serrated face of radiator 10, can thermal grease be set, to ensure that the heat of resin bed 30 can easily be passed to radiator 10, improves the radiating effect of semiconductor module block assembly 100.
Radiation processes according to the semiconductor module block assembly 100 of the utility model embodiment is: first the heat on semiconductor device 20 is passed to the first metal substrate 40 and resin bed 30; The heat being passed to resin bed 30 directly can be passed to external environment or be passed on radiator 10 by boss 31; The insulation connecting layer 60 that the heat being passed to the first metal substrate 40 is formed by binding agent etc. is passed in the platform part 11 of radiator 10.Thus, the most of heat on semiconductor device 20 can be passed to radiator 10, finally by radiator 10 by heat loss in air.The radiator structure of this kind of semiconductor module block assembly 100 is reasonable, and radiating rate is fast, good heat dissipation effect.
The semiconductor module block assembly 100 according to the utility model embodiment is comprised according to the air-conditioning of the utility model second aspect embodiment.Wherein, semiconductor module block assembly 100 can be used as the use of power semiconductor modular assembly.Semiconductor module block assembly 100 can be connected with the control circuit board in air-conditioning, and particularly, the first metal substrate 40 in semiconductor module block assembly 100 is electrically connected with control circuit board with the second metal substrate 50.
Owing to having above-mentioned useful technique effect according to the empty semiconductor module of the utility model embodiment, therefore improve according to the air-conditioning heat dissipation effect of the utility model embodiment, useful life extends.
According to the utility model implement air-conditioning other form and operation be known for the person of ordinary skill of the art, be not described in detail at this.
In the description of this specification, specific features, structure, material or feature that the description of reference term " embodiment ", " some embodiments ", " example ", " concrete example " or " some examples " etc. means to describe in conjunction with this embodiment or example are contained at least one embodiment of the present utility model or example.In this manual, to the schematic representation of above-mentioned term not must for be identical embodiment or example.And the specific features of description, structure, material or feature can combine in one or more embodiment in office or example in an appropriate manner.In addition, when not conflicting, the feature of the different embodiment described in this specification or example and different embodiment or example can carry out combining and combining by those skilled in the art.
Although illustrate and described embodiment of the present utility model above, be understandable that, above-described embodiment is exemplary, can not be interpreted as restriction of the present utility model, those of ordinary skill in the art can change above-described embodiment, revises, replace and modification in scope of the present utility model.
Claims (10)
1. a semiconductor module block assembly, is characterized in that, comprising:
Radiator, the upper surface of described radiator is provided with at least one platform part protruding upward;
Resin bed, described resin bed to be located on described radiator and to cover the upper surface of described platform part;
First metal substrate, a part for described first metal substrate is located between the upper surface of described platform part and described resin bed, and another part of described first metal substrate stretches out described resin bed;
Insulation connecting layer, described insulation connecting layer is located between the lower surface of described first metal substrate and the upper surface of described platform part to be connected described first metal substrate and described platform part;
Second metal substrate, described second metal substrate is located in described resin bed, described second metal substrate and the spaced apart setting of described first metal substrate; And
Semiconductor device, the upper surface that described semiconductor device is located at described first metal substrate is electrically connected with described second metal substrate.
2. semiconductor module block assembly according to claim 1, is characterized in that, the upper surface of described platform part is formed as plane, and described first metal substrate is located on the upper surface of described platform part in the horizontal direction.
3. semiconductor module block assembly according to claim 2, is characterized in that, the area that described first metal substrate stretches out the part of described resin bed is greater than the area that described first metal substrate is positioned at described resin bed.
4. semiconductor module block assembly according to claim 2, it is characterized in that, the upper surface of described radiator is provided with two described platform part arranged spaced apart, the orthographic projection of described resin bed on described radiator covers and exceeds the region between two described platform part and two described platform part, each described platform part is respectively equipped with described first metal substrate, be provided with two described second metal substrates between two described first metal substrates, each described first metal substrate is respectively equipped with a described semiconductor device.
5. semiconductor module block assembly according to claim 4, is characterized in that, the upper surface of two described platform part is concordant, and two described first metal substrates are identical with the level height of two described second metal substrates.
6. semiconductor module block assembly according to claim 4, it is characterized in that, the region between two described platform part of described resin bed is provided with outstanding boss downwards, and the lower surface of described boss only supports the upper surface between two described platform part of described radiator.
7. semiconductor module block assembly according to claim 6, is characterized in that, the lower surface of described boss is formed as serrated face, and the upper surface between two described platform part of described radiator is formed as the serrated face corresponding with the lower surface of described boss.
8. the semiconductor module block assembly according to any one of claim 1-7, is characterized in that, upper surface and the side wall surface of described platform part are provided with dielectric film.
9. the semiconductor module block assembly according to any one of claim 1-7, is characterized in that, described insulation connecting layer is solid particles adhesion layer.
10. an air-conditioning, is characterized in that, comprises the semiconductor module block assembly according to any one of claim 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420532792.2U CN204179073U (en) | 2014-09-16 | 2014-09-16 | Semiconductor module block assembly and the air-conditioning with it |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420532792.2U CN204179073U (en) | 2014-09-16 | 2014-09-16 | Semiconductor module block assembly and the air-conditioning with it |
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| CN204179073U true CN204179073U (en) | 2015-02-25 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110715181A (en) * | 2019-10-28 | 2020-01-21 | 维吉尔泰光电科技(徐州)有限公司 | Dull and stereotyped lamp of luminance adjustable LED |
| CN113777473A (en) * | 2021-09-24 | 2021-12-10 | 长江存储科技有限责任公司 | Aging test system |
-
2014
- 2014-09-16 CN CN201420532792.2U patent/CN204179073U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110715181A (en) * | 2019-10-28 | 2020-01-21 | 维吉尔泰光电科技(徐州)有限公司 | Dull and stereotyped lamp of luminance adjustable LED |
| CN110715181B (en) * | 2019-10-28 | 2020-09-29 | 维吉尔泰光电科技(徐州)有限公司 | Dull and stereotyped lamp of luminance adjustable LED |
| CN113777473A (en) * | 2021-09-24 | 2021-12-10 | 长江存储科技有限责任公司 | Aging test system |
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