CN204160371U - A kind of bonding type thyristor chip test adapter - Google Patents
A kind of bonding type thyristor chip test adapter Download PDFInfo
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- CN204160371U CN204160371U CN201420650096.1U CN201420650096U CN204160371U CN 204160371 U CN204160371 U CN 204160371U CN 201420650096 U CN201420650096 U CN 201420650096U CN 204160371 U CN204160371 U CN 204160371U
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- gate pole
- pole assembly
- negative electrode
- molybdenum sheet
- chip
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Abstract
A kind of bonding type thyristor chip test adapter, it comprises upper cover, gate pole assembly, negative electrode molybdenum sheet, locating ring and base.The center of this negative electrode molybdenum sheet has internal thread hole, and be outward extended with wire casing in internal thread hole place, this gate pole assembly is fixed on cathode molybdenum sheet by the external screw thread of insulation division and the screwing togather of internal thread hole of negative electrode molybdenum sheet, and the lead-in wire of gate pole assembly is then embedded in the wire casing of negative electrode molybdenum sheet and extends outside negative electrode molybdenum sheet along wire casing.So, by changing the fixed form of gate pole assembly in adapter, gate pole assembly and negative electrode molybdenum sheet are fixed together.When carrying out chip testing, negative electrode molybdenum sheet in conjunction with gate pole assembly is placed on the cathode plane of chip, make pressing again after gate pole assembly and chip concentric, effectively prevent and cause the thimble of gate pole assembly occur in the central door polar region of chip to slide and damage the central door polar region of chip because chip occurs to offset in locating ring.
Description
Technical field
The utility model relates to chip testing field, is specifically related to a kind of bonding type thyristor chip test adapter.
Background technology
Bonding type thyristor chip is a kind of thyristor chip Mo wafer and wafer made by low-temperature bonding technique, its structure as shown in Figures 1 and 2, this bonding type thyristor chip 1 is formed by wafer 11 and Mo wafer 12 bonding, the table top of this bonding type thyristor chip 1 and edge are perfused with silica gel 13, wafer 11 top is made to form a concave station 14, the negative electrode of this bonding type thyristor chip 1 is wafer, and anode is Mo wafer, and central door polar region represents with the label 15 in Fig. 2.
Adaptor chip be a kind of be arranged in chip testing devices chip fixture apparatus.Bonding type thyristor chip adapter traditional at present, as shown in Figure 3, comprises upper cover 2, gate pole assembly 3, negative electrode molybdenum sheet 4, locating ring 5 and bottom 6.This upper cover 2 center has through internal thread hole 21; This gate pole assembly 3 is made up of (see Fig. 4) insulation division 31, the thimble 32 laying respectively at insulation division two ends and lead-in wire 33, and thimble 32 is connected with the wire in lead-in wire 33, and this insulation division 31 has external screw thread (not shown); This cathode molybdenum sheet 4 center has perforation.The lead end of this gate pole assembly 3 is fixed by the external screw thread of insulation division 31 and the internal thread hole 21 of upper cover 2, and this lead-in wire 33 passes to upper cover 2 outside along the through hole established in upper cover 2, and this locating ring 5 is fixed on base 6.During test, this upper cover 2 is fixed on the pressure head of testboard, base 6 is fixed on testboard, bonding type thyristor chip 1 is placed in the center in this locating ring 5, negative electrode molybdenum sheet 4 is placed in the concave station 14 of bonding type thyristor chip, and with the cathode contacts of bonding type thyristor chip, when pressure head pressurizes, upper cover 2 moves down, the thimble end of gate pole assembly is then through the perforation of cathode molybdenum sheet, thimble 32 is contacted with the central door polar region 15 of bonding type thyristor chip 1, when pressure head applies pressure, by bonding type thyristor chip, the parts such as gate pole assembly and negative electrode molybdenum sheet are securely fixed together.
But during test, no matter be normal temperature test or high temperature test, the adaptor chip testing use under different temperatures is all the same.Due to bonding type thyristor chip table top and edge perfusion be silica gel, at high temperature there is certain expansion, also there are some differences in the diameter of different chip simultaneously, in order to ensure that these chips can use in normal temperature test and high temperature test on this adapter, adapter locating ring internal diameter is larger than chip diameter.Therefore, when bonding type thyristor chip is placed to after in locating ring, between chip and locating ring, just must there is gap, when being just difficult to ensure that chip is arranged in locating ring, not depart from the center of locating ring.When chip departs from locating ring center, chip and gate pole assembly not concentric, thimble and the gate pole district of chip center of the gate pole assembly in adapter upper cover produce relative displacement and damage the central door polar region of chip, have necessity of improvement in fact.
Utility model content
Technical problem to be solved in the utility model is: the problem in lesion center gate pole district for the thimble of the gate pole assembly when testing of bonding type thyristor chip in above-mentioned prior art and the generation relative displacement of bonding type thyristor chip, and provides a kind of bonding type thyristor chip test adapter.
In order to solve the problems of the technologies described above, the technical scheme that the utility model adopts is: a kind of bonding type thyristor chip test adapter, the gate pole assembly placed concentric on bonding type thyristor chip when it comprises negative electrode molybdenum sheet and tests, this gate pole assembly comprises and is provided with externally threaded insulation division, thimble and lead-in wire, be characterized in, the center of described negative electrode molybdenum sheet has internal thread hole, and is outward extended with wire casing in internal thread hole place; Described gate pole assembly is fixed on cathode molybdenum sheet by the external screw thread of insulation division and the screwing togather of internal thread hole of negative electrode molybdenum sheet, and the lead-in wire of gate pole assembly is then embedded in the wire casing of negative electrode molybdenum sheet and extends outside negative electrode molybdenum sheet.
The insulation division of described gate pole assembly is made up of polytetrafluoroethylene (PTFE).
So, this adapter is by changing the fixed form of gate pole assembly in adapter, be fixed on by gate pole assembly in the internal thread hole at negative electrode molybdenum sheet center, the lead-in wire of gate pole assembly is embedded in the wire casing of negative electrode molybdenum sheet, and gate pole assembly and negative electrode molybdenum sheet are fixed together.When carrying out chip testing, negative electrode molybdenum sheet with gate pole assembly is directly put on the cathode plane of bonding type thyristor chip, make gate pole assembly and chip concentric, carry out pressing again, effectively prevent and cause the thimble of gate pole assembly occur in the central door polar region of bonding type thyristor chip to slide and damage the central door polar region of bonding type thyristor chip because bonding type thyristor chip occurs to offset in the locating ring of adapter shoe.This adapter makes simple, and cost is lower.
Accompanying drawing explanation
Fig. 1 is bonding type thyristor chip sectional structure chart.
Fig. 2 is bonding type thyristor chip top view.
Fig. 3 is traditional thyristors adaptor chip cut-away view.
Fig. 4 is the structural representation of gate pole assembly.
Fig. 5 is adapter cut-away view of the present utility model.
Fig. 6 is negative electrode molybdenum sheet cut-away view of the present utility model.
Detailed description of the invention
As shown in Figure 5, the utility model is a kind of bonding type thyristor chip test adapter, and it comprises upper cover 2, gate pole assembly 3, negative electrode molybdenum sheet 7, locating ring 5 and base 6.This gate pole assembly 3 is made up of insulation division 31, thimble 32 and lead-in wire 33, and this locating ring 5 is fixed on base 6, and wherein, the structure of gate pole assembly 3, locating ring 5 and base 6 is identical with conventional art, does not repeat them here.Unlike, in the utility model, gate pole assembly 3 is not combine fixing with upper cover 2, but combine with negative electrode molybdenum sheet 7 and fixes, and natural upper cover 2 does not need to arrange the internal thread hole and through hole that screw togather gate pole assembly.The center of this negative electrode molybdenum sheet 7 has internal thread hole 71, and is extended with wire casing 72 to place, see Fig. 6 in internal thread hole 71 place.This gate pole assembly 3 is fixed on cathode molybdenum sheet 7 by the external screw thread of insulation division 31 and the screwing togather of internal thread hole 71 of negative electrode molybdenum sheet 7, and 33, the lead-in wire of gate pole assembly 3 is embedded in the wire casing 72 of negative electrode molybdenum sheet 7 and extends outside negative electrode molybdenum sheet 7 along wire casing 72.
During test, upper cover 2 is fixed on the pressure head of testboard, and base 6 is fixed on testboard, and bonding type thyristor chip is placed in locating ring 5, and the negative electrode molybdenum sheet 7 be combined with gate pole assembly 3 is placed in the cathode plane of bonding type thyristor chip.When pressure head pressurizes, upper cover 2 moves down and to contact with negative electrode molybdenum sheet 7 and to apply pressure, is securely fixed together by the parts such as bonding type thyristor chip, gate pole assembly, negative electrode molybdenum sheet.So, gate pole assembly and negative electrode molybdenum sheet is adopted to combine fixing, during test, negative electrode molybdenum sheet is placed on bonding type thyristor chip cathode plane, make gate pole assembly and bonding type thyristor chip concentric, when upper cover move down contact with negative electrode molybdenum sheet and apply pressure time, the problem because of gate pole assembly and the generation relative displacement of bonding type thyristor chip and lesion center gate pole district when sliding appears in bonding type thyristor chip can not be there is.
Claims (2)
1. a bonding type thyristor chip test adapter, the gate pole assembly (3) placed concentric on bonding type thyristor chip when it comprises negative electrode molybdenum sheet (7) and tests, this gate pole assembly (3) comprise be provided with externally threaded insulation division (31), thimble (32) and lead-in wire (33), it is characterized in that, the center of described negative electrode molybdenum sheet (7) has internal thread hole (71), and is outward extended with wire casing (72) in internal thread hole (71) place; Described gate pole assembly (3) is fixed on cathode molybdenum sheet (7) by the external screw thread of insulation division (31) and the screwing togather of internal thread hole (71) of negative electrode molybdenum sheet (7), and the lead-in wire (33) of gate pole assembly (3) is then embedded in the wire casing (72) of negative electrode molybdenum sheet (7) and extends negative electrode molybdenum sheet (7) outward.
2. a kind of bonding type thyristor chip test adapter as claimed in claim 1, it is characterized in that, the insulation division (31) of described gate pole assembly (3) is made up of polytetrafluoroethylene (PTFE).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420650096.1U CN204160371U (en) | 2014-11-03 | 2014-11-03 | A kind of bonding type thyristor chip test adapter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420650096.1U CN204160371U (en) | 2014-11-03 | 2014-11-03 | A kind of bonding type thyristor chip test adapter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204160371U true CN204160371U (en) | 2015-02-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201420650096.1U Active CN204160371U (en) | 2014-11-03 | 2014-11-03 | A kind of bonding type thyristor chip test adapter |
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| Country | Link |
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| CN (1) | CN204160371U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109119352A (en) * | 2017-06-26 | 2019-01-01 | 株洲中车时代电气股份有限公司 | A kind of installation method of core parameter testing method, adaptive device and the device |
| CN110208677A (en) * | 2019-05-24 | 2019-09-06 | 华中科技大学 | A kind of device measuring vertical structure power device blocking voltage |
-
2014
- 2014-11-03 CN CN201420650096.1U patent/CN204160371U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109119352A (en) * | 2017-06-26 | 2019-01-01 | 株洲中车时代电气股份有限公司 | A kind of installation method of core parameter testing method, adaptive device and the device |
| CN109119352B (en) * | 2017-06-26 | 2020-10-16 | 株洲中车时代半导体有限公司 | Tube core parameter testing method, adaptive device and installation method of device |
| CN110208677A (en) * | 2019-05-24 | 2019-09-06 | 华中科技大学 | A kind of device measuring vertical structure power device blocking voltage |
| CN110208677B (en) * | 2019-05-24 | 2020-10-16 | 华中科技大学 | Device for measuring blocking voltage of power device with vertical structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee after: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road Patentee before: ZHUZHOU CSR TIMES ELECTRIC Co.,Ltd. |
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| CP03 | Change of name, title or address | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201014 Address after: 412001 Room 309, floor 3, semiconductor third line office building, Tianxin hi tech park, Shifeng District, Zhuzhou City, Hunan Province Patentee after: Zhuzhou CRRC times Semiconductor Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee before: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. |
|
| TR01 | Transfer of patent right |