CN204151456U - A kind of MOCVD reaction unit preparing semiconductor epitaxial wafer - Google Patents
A kind of MOCVD reaction unit preparing semiconductor epitaxial wafer Download PDFInfo
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- CN204151456U CN204151456U CN201420606400.2U CN201420606400U CN204151456U CN 204151456 U CN204151456 U CN 204151456U CN 201420606400 U CN201420606400 U CN 201420606400U CN 204151456 U CN204151456 U CN 204151456U
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- reaction chamber
- supporting seat
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- inlet mouth
- reaction unit
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Abstract
The utility model discloses a kind of MOCVD reaction unit preparing semiconductor epitaxial wafer, comprise inlet mouth and reaction chamber, be provided with top cover above reaction chamber, inlet mouth is vertically through top cover, and the sidewall of reaction chamber caves inward and forms indent ring structure; Being provided with below reaction chamber can the substrate supporting seat of axial-rotation, and the external diameter of substrate supporting seat is less than the internal diameter of cavity, and the space between substrate supporting seat and cavity configuration inwall is formed as exhaust-duct; The junction of substrate supporting seat sidewall and its upper edge is rounding structure, and the inwall of itself and cavity configuration forms Y shape funnel structure.The utility model greatly inhibits the gas of reaction chamber upwards to roll the eddy current formed, the stability of gas field near the substrate supporting seat that improve high speed rotating; Rounding airflow design is reduced and is optimized the distance between load bearing seat and cavity inner wall, and the gas entered in exhaust-duct by reaction chamber is not easily upwards rolled, and further increases the stability of reaction chamber air-flow and the homogeneity of film growth.
Description
Technical field
The utility model belongs to semiconductor manufacturing facility technical field, is specifically related to a kind of MOCVD reaction unit preparing semiconductor epitaxial wafer.
Background technology
MOCVD (Metal-organic Chemical Vapor Deposition) i.e. MOCVD is the gordian technique preparing compound semiconductor film.It is indispensable that MOCVD device is that the gan high-power electronic device of wave band such as research and development world-class S, C, X, K and Q etc. and high-power solid switch device, high-end Laser Devices and efficiency can reach the opto-electronic devices such as the solar cell of more than 40%.It utilize comparatively volatile organic matter (such as (CH3) 3Ga) as the source reactant of the atoms metal of more difficult volatilization, be carried in reactor by carrier gas, there is chemical reaction in (with NH3) under the conditions such as suitable air pressure, temperature, goes out (GaN) film at the substrate base Epitaxial growth of heating.The film thickness prepared and the homogeneity of component are one of important indicators passing judgment on film quality.Grow thickness and the uniform large area film material of component, the substrate base speed of growth everywhere and the reactant concn arriving substrate should be tried one's best uniformity.This just requires the substrate surface speed of growth and arrive the reactant concn of substrate and should to try one's best uniformity everywhere.So just necessarily require to there is uniform gas flowfield, temperature field and reactant concn field distribution near substrate surface, should be in laminar region above substrate, without any type of eddy current, the reactant newly passed into should be able to arrive each point above substrate simultaneously as far as possible.
The MOCVD reaction unit of prior art is barrel-like structure substantially, and the modes such as its inside is provided with pedestal, and semiconducter substrate is placed on the pedestal of high speed rotating, the running balance of being bled by continuous air inlet guarantee the homogeneity of substrate epitaxial thickness.But in the effect downstream meeting eddy generation that the pump efficiency that pedestal high speed rotating produces is answered, this pump efficiency should be the stickiness power of fluid and rotate the coefficient result of centrifugal force produced, due to the stickiness of fluid, one deck gas near base-plates surface is followed pedestal and is rotated together, gas is radially thrown to susceptor edges under the influence of centrifugal force, and the gas simultaneously above pedestal flows into base-plates surface frictional belt vertically and supplements.Again because base-plate temp is higher, produce heat buoyancy effect, thermograde makes air-flow up to roll formation vortex.Due to pump efficiency should and its reaction chamber of producing of heat buoyancy effect in air-flow wild effect can clearly, air-flow can produce larger eddy current near reaction chamber inwall place above reaction chamber; Secondly, near the pedestal of high speed rotating, air-flow flow path is complicated, and the air-flow condition making to prepare high-quality thin film that fluctuates up and down is destroyed, and have impact on the homoepitaxial of film, the homogeneity of film and sedimentation rate is lowered, and easily introduces foreign material.
Utility model content
The purpose of this utility model is to solve above deficiency, and devise a kind of MOCVD reaction unit preparing semiconductor epitaxial wafer, this device can reduce the air whirl in MOCVD reaction chamber, improves stability and the homogeneity of thin-film deposition.
The technical scheme taked to realize the utility model object is: a kind of MOCVD reaction unit preparing semiconductor epitaxial wafer, described reaction unit is cavity configuration, comprise inlet mouth, reaction chamber and exhaust-duct, being provided with below described reaction chamber can the substrate supporting seat of axial-rotation, heating unit is provided with bottom substrate supporting seat, be provided with top cover above described reaction chamber, described inlet mouth is vertically through described top cover, and the sidewall of described reaction chamber caves inward and forms indent ring structure; The external diameter of described substrate supporting seat is less than the internal diameter of described cavity configuration, and the space between substrate supporting seat and cavity configuration inwall is formed as described exhaust-duct, and exhaust-duct is communicated with reaction chamber; The sidewall of substrate supporting seat and the junction of its upper edge are rounding structure, and the inwall of described rounding structure and cavity configuration forms Y shape funnel structure.
Compared with prior art, the beneficial effects of the utility model are:
1, in MOCVD reaction process, the stickiness power of fluid and substrate supporting seat rotate the centrifugal force produced and make the gas above load bearing seat can flow into load bearing seat surface boundary layer vertically to supplement, form downward air-flow, the heat buoyancy effect due to the generation of load bearing seat temperature height makes air-flow easily up roll and forms eddy current.In MOCVD reaction unit of the present utility model, reaction chamber sidewall caves inward and forms indent ring structure, make air-flow Uniform Flow near the wall of chamber, the gas greatly reducing reaction chamber upwards rolls the eddy current formed, hot-fluid in uphill process with recessed collision with wall, lift velocity slows down, finally make originally to diminish at the extensive vortex of wall both sides, make in the narrow range between its top only concentrating on reaction chamber indent annular inner wall and top cover, due to the existence of top cover inlet mouth, this narrow range is made to be semi-closed structure, therefore the impact of the small scale vortices produced on the flow field rotated near substrate supporting seat can be ignored, the stability of gas field near the substrate supporting seat that improve high speed rotating.
2, the side wall shoulder of substrate supporting seat adopts rounding airflow design, itself and cavity configuration inwall form Y shape funnel-shaped structure, this design is reduced and is optimized the distance between the substrate supporting seat of high speed rotating and cavity inner wall, make the streamline of gas in exhaust-duct more smooth, gas is not easily upwards rolled, gas flowfield near further guarantee substrate supporting seat is interference-free, and makes waste gas flow out to extraneous flare system very swimmingly from the exhaust-duct of substrate supporting seat both sides.The demoulding in manufacturing processed and shaping is convenient in the simultaneously fairshaped design of rounding.
In the utility model, the indent annular design of reaction chamber sidewall and the rounding design of substrate supporting seat shoulder make to have stable gas flowfield near substrate supporting seat, improve sedimentation rate and the deposition uniformity of film growth.
Preferably, described indent ring structure increases gradually from the upper and lower two ends of reaction chamber to the curvature of centre.
Preferably, the angular range between the central axis of described Y shape funnel structure and horizontal plane is 30 °-50 °.
Under this angle, gas in exhaust-duct is not easy bounce-back, and gas circulation is more smooth and easy, is easilier discharged outside to flare system from exhaust-duct, make it can not disturb gas flowfield near substrate supporting seat, improve the stability of reaction and the homogeneity of film growth further.
Preferably, the distance between described substrate supporting seat sidewall and described cavity configuration inwall is 15-25mm.
Rounding airflow design reduces the spacing between substrate supporting seat sidewall and cavity configuration inwall, thus makes each particle of fluid be parallel to vias inner walls, flows regularly, not easily occurs breathing heavily stream, makes the gas field near epitaxial wafer growth more stable.This distance also directly has influence on the size of exhaust-duct simultaneously, and within the scope of this, the discharge of waste gas is more smooth and easy.
Preferably, described inlet mouth comprises and is spacedly arranged in MO (metallorganics) source inlet mouth on top cover and oxygen source inlet mouth.
Preferably, described oxygen source inlet mouth is in falling funnel-form, and described MO source inlet mouth is bar gap-like inlet mouth.
Design like this can fully mix when making oxygen source and MO source enter reaction chamber, makes reaction more abundant, improves the overall homogeneity of film composition.
Preferably, also comprise the mass rate be connected with described oxygen source inlet mouth and MO source inlet mouth to control to count.
Preferably, the bottom of described exhaust-duct is provided with the base plate of band through hole, and described through hole is evenly distributed on described base plate.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model MOCVD reaction unit;
Fig. 2 is the enlarged view of substrate supporting seat top side wall and cavity configuration inwall in Fig. 1;
Fig. 3 is the gas flow figure that Fig. 1 is corresponding.
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model is described further:
Shown in accompanying drawing 1 to accompanying drawing 3, a kind of MOCVD reaction unit preparing semiconductor epitaxial wafer, this reaction unit is cavity configuration 1, comprises inlet mouth, reaction chamber 2 and exhaust-duct.Being provided with below reaction chamber 2 can the substrate supporting seat 4 of axial-rotation, and substrate supporting seat 4 and cavity configuration 1 are coaxially arranged, and are provided with heating unit bottom substrate supporting seat 4.Be provided with top cover 3 above reaction chamber 2, described inlet mouth comprises and is spacedly arranged in MO (metallorganics) source inlet mouth 31 on top cover and oxygen source inlet mouth 32, and MO source inlet mouth 31 is vertical with oxygen source inlet mouth 32 through top cover 3.Described oxygen source inlet mouth 32 is in falling funnel-form, and this inlet mouth top is the import of bar gap-like, increases gradually to bottom air inlet bore in the middle part of inlet mouth.Described MO source inlet mouth 31 is bar gap-like inlet mouth, and MO source inlet mouth 31 and oxygen source inlet mouth 32 are arranged parallel to each other.Oxygen source inlet mouth 32 and MO source inlet mouth 31 are also connected with mass rate and control meter (MFC), for controlling flow and the speed of air inlet.Same gas inlet can use a mass rate to control meter jointly.The sidewall of described reaction chamber 2 caves inward and forms indent ring structure 21, and indent ring structure increases gradually from reaction chamber about 2 two ends to the curvature of centre.The external diameter of substrate supporting seat 4 is less than the internal diameter of described cavity configuration 1, and the space between substrate supporting seat 4 and cavity configuration 1 inwall is formed as exhaust-duct 5, and exhaust-duct 5 is communicated with reaction chamber 2.The more excellent scope of the distance C between substrate supporting seat 4 sidewall and described cavity configuration 1 inwall is 15-25mm.The sidewall of substrate supporting seat 4 and the junction of its upper edge are rounding structure 41, described rounding structure 41 forms Y shape funnel structure with the inwall 11 of cavity configuration 1, angular range β between the central axis of Y shape funnel structure and horizontal plane is 30 °-50 °, in this embodiment, this angle is 45 °.Be provided with the base plate of band through hole 51 in the bottom of exhaust-duct 5, described through hole 51 is evenly distributed on described base plate, the streamline making waste gas downward stable and uniform more.
When producing, first vacuumize cavity configuration 1, on the substrate supporting seat 4 being positioned at cavity configuration 1 center of inside, load needs the chip of continuation, and substrate supporting seat 4 is by heating devices heat, high temperature load bearing seat high speed rotating under the drive of rotating shaft 4a, speed of rotation is 500rpm-800rpm.MO source and oxygen source controllably vertically enter in reaction chamber 2 from top cover under the control of MFC flowrate control valve, and wherein the induction air flow ratio of MO and oxygen source is 0.1-2m/s.Due under the stickiness power of fluid and the centrifugal action of rotation generation, the gas above substrate supporting seat 4 flows into load bearing seat surface boundary layer vertically and supplements, and forms downward air-flow.Gas reacts in the reaction chamber, and substrate chip forms crystallization, the expansion film required for formation.Load bearing seat 4 is due to temperature comparatively high yield heat-dissipating buoyant effect in this process, the situation that the indent ring structure 21 of reaction chamber 2 inwall effectively inhibits air-flow to form eddy current when upwards rolling occurs, its make hot-fluid in uphill process with indent collision with wall, slow down gas lift velocity, avoid the existence of extensive vortex above load bearing seat, make only to exist only in the semi-closed structure between indent ring structure 21 top and top cover 3, greatly reduce the impact of eddy current for the gas field stability of chip surface.Substrate supporting seat 4 top side wall adopts rounding airflow design simultaneously, forming cross section with cavity configuration 1 inner-wall surface is Y shape funnel-shaped structure, make the streamline of the gas in the exhaust-duct 5 formed between substrate supporting seat 4 sidewall and cavity configuration 1 inwall more smooth, and gas is not easily upwards rolled, gas flowfield near further guarantee substrate supporting seat 4 is interference-free, make waste gas be easy to flow out to from the exhaust-duct of substrate supporting seat both sides extraneous flare system, the demoulding in manufacturing processed and shaping is convenient in the fairshaped design of rounding simultaneously.
Also be provided with viewing window 33 at the middle part of top cover 3, technologist can by the response situation of viewing window 33 at-once monitor cavity configuration 1 inside.
The announcement of book and instruction according to the above description, the utility model those skilled in the art can also change above-mentioned embodiment and revise.Therefore, the utility model is not limited to embodiment disclosed and described above, also should fall in the protection domain of claim of the present utility model modifications and changes more of the present utility model.In addition, although employ some specific terms in this specification sheets, these terms just for convenience of description, do not form any restriction to the utility model.
Claims (8)
1. prepare the MOCVD reaction unit of semiconductor epitaxial wafer for one kind, described reaction unit is cavity configuration, comprise inlet mouth, reaction chamber and exhaust-duct, being provided with below described reaction chamber can the substrate supporting seat of axial-rotation, be provided with heating unit bottom substrate supporting seat, it is characterized in that, above described reaction chamber, be provided with top cover, described inlet mouth is vertically through described top cover, and the sidewall of described reaction chamber caves inward and forms indent ring structure; The external diameter of described substrate supporting seat is less than the internal diameter of described cavity configuration, and the space between substrate supporting seat and cavity configuration inwall is formed as described exhaust-duct, and exhaust-duct is communicated with reaction chamber; The sidewall of substrate supporting seat and the junction of its upper edge are rounding structure, and the inwall of described rounding structure and cavity configuration forms Y shape funnel structure.
2. MOCVD reaction unit according to claim 1, is characterized in that, described indent ring structure increases gradually from the upper and lower two ends of reaction chamber to the curvature of centre.
3. MOCVD reaction unit according to claim 1, is characterized in that, the angular range between the central axis of described Y shape funnel structure and horizontal plane is 30 °-50 °.
4. MOCVD reaction unit according to claim 1, is characterized in that, the distance between described substrate supporting seat sidewall and described cavity configuration inwall is 15-25mm.
5. MOCVD reaction unit according to claim 1, is characterized in that, described inlet mouth comprises and is spacedly arranged in MO source inlet mouth on top cover and oxygen source inlet mouth.
6. MOCVD reaction unit according to claim 5, is characterized in that, described oxygen source inlet mouth is in falling funnel-form, and described MO source inlet mouth is bar gap-like inlet mouth.
7. MOCVD reaction unit according to claim 6, is characterized in that, also comprises the mass rate be connected with described oxygen source inlet mouth and MO source inlet mouth and controls to count.
8. MOCVD reaction unit according to claim 1, is characterized in that, the bottom of described exhaust-duct is the base plate of band through hole, and described through hole is evenly distributed on described base plate.
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| CN201420606400.2U CN204151456U (en) | 2014-10-20 | 2014-10-20 | A kind of MOCVD reaction unit preparing semiconductor epitaxial wafer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104264217A (en) * | 2014-10-20 | 2015-01-07 | 佛山市中山大学研究院 | MOCVD (metal organic chemical vapor deposition) reaction device for preparing semiconductor epitaxial wafers |
| GB2571248A (en) * | 2018-01-11 | 2019-08-28 | Paragraf Ltd | A method of making graphene layer structures |
| CN112410754A (en) * | 2020-10-30 | 2021-02-26 | 北京北方华创微电子装备有限公司 | Tail gas device and semiconductor process equipment |
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2014
- 2014-10-20 CN CN201420606400.2U patent/CN204151456U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104264217A (en) * | 2014-10-20 | 2015-01-07 | 佛山市中山大学研究院 | MOCVD (metal organic chemical vapor deposition) reaction device for preparing semiconductor epitaxial wafers |
| GB2571248A (en) * | 2018-01-11 | 2019-08-28 | Paragraf Ltd | A method of making graphene layer structures |
| GB2571248B (en) * | 2018-01-11 | 2022-07-13 | Paragraf Ltd | A method of making Graphene layer structures |
| US11643719B2 (en) | 2018-01-11 | 2023-05-09 | Paragraf Limited | Method of making graphene layer structures |
| EP4296225A2 (en) | 2018-01-11 | 2023-12-27 | Paragraf Limited | A method of making graphene layer structures |
| CN112410754A (en) * | 2020-10-30 | 2021-02-26 | 北京北方华创微电子装备有限公司 | Tail gas device and semiconductor process equipment |
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