CN204589376U - A kind of crucible cover plate device preparing high-purity crystal silicon ingot casting - Google Patents
A kind of crucible cover plate device preparing high-purity crystal silicon ingot casting Download PDFInfo
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- CN204589376U CN204589376U CN201520146065.7U CN201520146065U CN204589376U CN 204589376 U CN204589376 U CN 204589376U CN 201520146065 U CN201520146065 U CN 201520146065U CN 204589376 U CN204589376 U CN 204589376U
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- cover plate
- crucible cover
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Abstract
The utility model discloses a kind of crucible cover plate device preparing high-purity crystal silicon ingot casting, comprise U-shaped crucible cover plate, shielding gas inlet pipe, sliding sleeve, crucible cover plate elevating lever and cover plate lifting device.The crucible cover plate device that the utility model provides; in material process; along with the change on silicon material surface moves down; to keep the distance between cover plate and silicon material surface; and remain motionless in long brilliant process; thus make the inertia shielding gas flow that entered by shielding gas inlet pipe; from the outside Zhou Liudong of silicon material (or silicon melt) centre of surface; then flow out from the interstitial channels between cover sidewall and crucible internal walls, take away the impurity component that silicon material (or silicon melt) surface evaporates under the high temperature conditions timely and effectively.Meanwhile, the U-shaped design of crucible cover plate can effectively suppress the impurity component in furnace chamber atmosphere gas to arrive silicon material (or silicon melt) surface by gas backstreaming and diffusion.
Description
Technical field:
The utility model belongs to crystal silicon solar field of photovoltaic technology, is specifically related to a kind of crucible cover plate device preparing high-purity crystal silicon ingot casting.
Background technology:
Photovoltaic is one of principal mode of utilization of new energy resources, has good development prospect.Solar cell is the core component of solar energy photovoltaic system, and prepare the material mainly crystalline silicon of solar cell, the preparation cost of crystalline silicon ingot casting and quality directly determine preparation cost and the photoelectric transformation efficiency of solar cell.In the various preparation methods of crystalline silicon ingot casting, directional solidification method because its control is easy, be easy to large size growth, average energy consumption is little, and the ingot casting produced can advantages such as directly square-cut silicon chip, spillage of material be little and being used widely.
Directional solidification method is prepared polycrystalline silicon ingot casting and is developed into present 800kg from every ingot at the end of the nineties in last century less than 100kg, and charging capacity progressively increases.Meanwhile, casting ingot process is constantly updated, and the cycle of operation obviously shortens; Needed for ingot casting, thermal field structure is updated, and energy consumption reduces further.Corresponding ingot quality improves constantly, and cell photoelectric efficiency of conversion significantly promotes.But the crystal boundary existed in polycrystalline silicon ingot casting, dislocation and higher impurity concentration but exist always.Although quasi-monocrystalline silicon/efficient polycrystalline silicon ingot casting overcomes above-mentioned occasional defects, all inevasible impurity that there is higher concentration in ingot casting.
The raw materials used quality of crystal silicon ingot casting directional freeze process is general lower, in addition from the pollution of quartz crucible and furnace interior graphite components, and O, C impurity usually containing high density in ingot casting.Impurity element easily in dislocation and grain boundaries segregation, thus has a negative impact to minority carrier lifetime and solar battery efficiency.Such as, in ingot casting during C excessive concentration, SiC precipitation can be formed, induced defects, and affect subsequent slice process, cause that the electric property of material is deteriorated, yield rate reduction.
Current most of producer, when carrying out crystal silicon ingot casting process, can use the simple C/C cover plate of structure to control Impurity Transport.But, in ingot casting process, impurity in stove in graphite components, C/C plate, especially C impurity, silicon material (material stage) or silicon melt (long brilliant stage) surface can be transported to by gas backstreaming, thus silicon material in pollution crucible or silicon melt, affect crystal silicon ingot quality.
Therefore, seek more effective covering plate structure and material, more effectively to reduce the impurity concentration in ingot casting, for raising silicon crystal quality and solar battery efficiency significant.
Utility model content:
The purpose of this utility model is according to gas stream in the stove structure; the crucible cover plate device of the high-purity crystal silicon ingot casting of simplicity of design preparation that is effective, easy to use, that can be applicable to scale operation; the fluidal texture of shielding gas in ingot casting process is improved with this; the growing environment of purifying crystal silicon ingot casting; reduce the foreign matter content in ingot casting; the particularly content of C impurity, improves the quality of crystal silicon ingot casting, improves silicon material utilization ratio and silicon chip yield.
For achieving the above object, this practicality adopts following technical scheme to be achieved:
Prepare a crucible cover plate device for high-purity crystal silicon ingot casting, comprise U-shaped crucible cover plate, shielding gas inlet pipe, sliding sleeve, crucible cover plate elevating lever and cover plate lifting device; Wherein, described U-shaped crucible cover plate center offers for the ventilating pit to furnace interior conveying shielding gas; The sliding sleeve that U-shaped crucible cover plate is arranged by its ventilating pit place and shielding gas inlet pipe are slidably connected; The below of crucible cover plate elevating lever is connected with U-shaped crucible cover plate, connects above it with cover plate lifting device.
The utility model further improves and is: described U-shaped crucible cover plate is the C/C cover plate with passivating coating, and its fusing point is greater than 1800K.
The utility model further improves and is: U-shaped crucible cover plate is U-shape groove, and the thickness of U-shaped crucible cover plate surrounding sidewall is consistent with horizontal component, and thickness is 2-10 millimeter, and the Sidewall Height of U-shaped crucible cover plate is 40-70 millimeter.
The utility model further improves and is: the shape of the ventilating pit that U-shaped crucible cover plate center is offered is circular port, and the diameter range of described circular port is 60-110 millimeter.
The utility model further improves and is: U-shaped crucible cover plate is arranged in quartz crucible, and the spacing of U-shaped crucible cover plate and inner wall of quartz crucible is 30-50 millimeter.
The utility model further improves and is: be silicon area in quartz crucible.
The utility model further improves and is: this crucible cover plate vibrational power flow has two set crucible cover plate elevating levers and cover plate lifting device, and two set crucible cover plate elevating levers and cover plate lifting device are symmetricly set on the both sides of shielding gas inlet pipe respectively.
Compared with prior art, the utility model has following unusual effect:
The crucible cover plate device that the utility model provides, in material process, along with the change on silicon material surface moves down, to keep the distance between cover plate and silicon material surface, and remain motionless in long brilliant process, thus make by shielding gas inlet pipe enter silicon material surface and cover plate lower surface between inertia shielding gas flow, from silicon material (or silicon melt) centre of surface along the outside Zhou Liudong of radius, then flow out from the interstitial channels between cover sidewall and crucible internal walls, the surperficial impurity component (as O impurity etc.) evaporated under the high temperature conditions of silicon material (or silicon melt) is taken away timely and effectively by the inertia shielding gas flow flowing through silicon material (or silicon melt) surface.Simultaneously, U-shaped deck design of the present utility model, impurity component (as O, C impurity etc.) in furnace chamber atmosphere gas can be effectively suppressed to arrive silicon material (material stage) or silicon melt (long brilliant stage) surface thus the silicon material polluted in crucible or silicon melt by gas backstreaming and diffusion, reduce the foreign matter content in crystal silicon ingot casting, improve the quality of silicon crystal.
U-shaped crucible cover plate of the present utility model; cover sidewall and inner wall of quartz crucible face keep certain distance; effectively can get rid of in ingot casting process the impurity composition volatilizing and produce, and the protected atmosphere gas of impurity composition effectively suppressing furnace chamber graphite member at high temperature to produce is transported to silicon material or silicon melt surface.
U-shaped crucible cover plate of the present utility model is connected with crucible cover plate elevating lever, under the control of crucible cover plate elevating lever, cover plate distance silicon material or the distance on silicon melt surface can adjust according to actual needs in real time, thus avoid impurity composition to be transported to silicon material or silicon melt surface by eddy airstream and the situation polluting silicon material or silicon melt occurs.
In sum, the utility model making method simple, easy to use, there is good prospects for commercial application.
Accompanying drawing illustrates:
Fig. 1 is the crucible cover plate device schematic diagram that the utility model prepares high-purity crystal silicon ingot casting.Fig. 1 (a) and Fig. 1 (b) is respectively the structural representation in material stage and long brilliant stage;
Wherein, 1 be shielding gas inlet pipe, 2 be sliding sleeve, 3 be U-shaped crucible cover plate, 4 be quartz crucible, 5 be silicon area, 6 be crucible cover plate elevating lever, 7 for cover plate lifting device.
Fig. 2 is silicon melt surface argon gas flowing structure iron under U-shaped crucible cover plate structure.
Fig. 3 is SiO and CO concentration local distribution figure under different crucible cover plate structure; Wherein, Fig. 3 (a) for SiO and CO concentration local distribution figure, Fig. 3 (b) under straight covering plate structure be SiO and CO concentration local distribution figure under U-shaped covering plate structure.
Fig. 4 is O, C impurity profile in silicon melt under different crucible cover plate structure; Wherein, Fig. 4 (a) is O, C impurity profile in silicon melt under straight covering plate structure, and Fig. 4 (b) is O, C impurity profile in silicon melt under U-shaped covering plate structure.
Embodiment:
Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.
As shown in Figure 1, a kind of crucible cover plate device preparing high-purity crystal silicon ingot casting of the utility model, comprises U type crucible cover plate 3, shielding gas inlet pipe 1, sliding sleeve 2, crucible cover plate elevating lever 6 and cover plate lifting device 7; Wherein, described U-shaped crucible cover plate 3 center offers for the ventilating pit to furnace interior conveying shielding gas; The sliding sleeve 2 that U-shaped crucible cover plate 3 is arranged by its ventilating pit place is slidably connected with shielding gas inlet pipe 1; The below of crucible cover plate elevating lever 6 is connected with U-shaped crucible cover plate 3; connect with cover plate lifting device 7 above it, thus control the movement of crucible cover plate, and then improve the shielding gas fluidal texture in ingot casting process; the growing environment of purifying crystal silicon, reduces the foreign matter content in crystal silicon ingot casting.The utility model making method is simple, easy to use, be applicable to scale operation needs.
Described U-shaped crucible cover plate 3 is for having the C/C cover plate of passivating coating, and its fusing point is greater than 1800K.Wherein, U-shaped crucible cover plate 3 is U-shape groove, and the thickness of U-shaped crucible cover plate 3 surrounding sidewall is consistent with horizontal component, and thickness is 2-10 millimeter, and the Sidewall Height of U-shaped crucible cover plate 3 is 40-70 millimeter.In addition, the shape of the ventilating pit that U-shaped crucible cover plate 3 center is offered is circular port, and the diameter range of described circular port is
60-110 millimeter.
Above-mentioned U-shaped crucible cover plate 3 is arranged in quartz crucible 4, and U-shaped crucible cover plate 3 is 30-50 millimeter with the spacing of quartz crucible 4 inwall.This gap can ensure that the foreign gas produced in ingot casting process is effectively taken away silicon material or silicon melt surface; Meanwhile, the impurity composition that this gap can effectively suppress outside graphite member at high temperature to produce enters silicon material or silicon melt region.This is because the described U-shaped crucible cover plate design impurity composition added in furnace chamber in atmosphere gas diffuses into the resistance of melt regions.
Further, this crucible cover plate vibrational power flow has two set crucible cover plate elevating levers 6 and cover plate lifting device 7, two set crucible cover plate elevating lever 6 and cover plate lifting device 7 to be symmetricly set on the both sides of shielding gas inlet pipe 1 respectively.
For better realizing described object, the height on U-shaped crucible cover plate distance silicon material of the present utility model or silicon melt surface can be regulated by crucible cover plate elevating lever, can meet the regulable control of different work loading height and charge amount downstream tissue.
Further, at the material initial stage, U-shaped crucible cover plate is positioned at above quartz crucible, and first shielding gas arrives silicon material upper surface by shielding gas inlet pipe, sliding sleeve.Along with silicon raw material volume-diminished in material process, silicon material surface declines thereupon, described U-shaped crucible cover plate also declines thereupon, and make the distance between itself and liquid level be maintained 30-80 millimeter, avoid the formation of silicon material or silicon melt surface air-flow vortex, thus make air-flow silicon material or silicon melt surface along radial direction from the outside Zhou Liudong in crucible center, furnace chamber is entered eventually through the clearance channel between cover sidewall and crucible internal walls, simultaneously, avoid the impurity composition in atmosphere gas be transported to silicon material or silicon melt surface and pollute silicon material or silicon melt situation occur, effective purifying silicon material or silicon melt surface environment.
Embodiment 1
As shown in Figure 1, a kind of crucible cover plate device preparing high-purity crystal silicon ingot casting of the utility model.Described U-shaped crucible cover plate 3 center has round vent, and in the utility model, the diameter range of this ventilating pit is 60-110 millimeter; Described shielding gas is argon gas; U-shaped cover plate and quartz crucible 4 inwall keep certain spacing W, and in the utility model, the scope of this spacing W is 30-50 millimeter, and U-shaped crucible cover plate 3 surrounding sidewall has certain height H, and in the utility model, this altitude range is 40-70 millimeter.U-shaped crucible cover plate 3 is slidably connected by sliding sleeve 2 and shielding gas inlet pipe 1; Under the acting in conjunction of crucible cover plate elevating lever 6 and cover plate lifting device 7, U-shaped crucible cover plate 3 can adjust according to actual needs in real time apart from the distance on silicon material or silicon melt surface.
U-shaped crucible cover plate 3 surrounding sidewall has certain altitude H; thus a side gap passage is formed between U-shaped crucible cover plate 3 sidewall and crucible internal walls, the situation that in furnace chamber, graphite member at high temperature transported or diffused to silicon material or silicon melt surface through the protected atmosphere gas backstreaming of impurity composition of chemical reaction generation can be avoided to occur.
Distance between U-shaped crucible cover plate 3 lower surface and silicon material or silicon melt surface is D, in material process, regulated by the height of crucible cover plate elevating lever to crucible cover plate distance silicon material surface, in the utility model, adjustable vertical distance range is 30-180 millimeter.After inlet mouth is filled with shielding gas; shielding gas is through sliding sleeve 2; first silicon material or silicon melt centre of surface is arrived; inertia shielding gas flow is through cover plate and the U-shaped passage that formed between crucible and liquid level subsequently; timely and effectively the impurity composition that silicon material (or silicon melt) surface evaporates under the high temperature conditions is taken away silicon area, as shown in Figure 2.
Embodiment 2
The contrast of foreign matter content in ingot casting under different crucible cover plate structure
The present embodiment is with foreign matter content final in ingot casting for measurement index, and investigate the impurity concentration under the straight cover plate of common C/C and U-shaped C/C cover plate and distribution, cover plate lower surface scribbles passivating coating in the present embodiment, and consistency of thickness.
In the present embodiment, the height of U-shaped crucible cover plate 3 surrounding sidewall is 50 millimeters, is 40 millimeters with the spacing of quartz crucible; U-shaped crucible cover plate 3 is 120 millimeters with the initial distance on silicon material surface, in material process, according to the change on silicon material surface, crucible cover plate elevating lever is utilized to regulate cap locations, namely vertically move down, at the end of fusing, U-shaped crucible cover plate 3 is 60 millimeters with the vertical range of silicon liquid level.Straight cover plate to be positioned at above quartz crucible 80 millimeters.Other growth conditions is identical.
As shown in Figure 3, be the distribution plan of SiO and CO concentration in ingot furnace under different crucible cover plate structure.SiO Gas concentration distribution in comparison diagram 3 (a) and Fig. 3 (b), can find that the SiO concentration of silicon melt surface is about 1.0 × 10 under straight cover plate
-9mol/cm
3.For U-shaped covering plate structure, because the large circulation eddy current between cover plate and silicon melt surface disappears, the SiO component that bath surface volatilization produces is easy to be taken away bath surface by air-flow, so as can be seen from Fig. 3 (b), the SiO concentration between silicon melt surface and cover plate lower surface is about 1.0 × 10
-11~ 1.0 × 10
-9mol/cm
3.Under two kinds of covering plate structures, SiO peak concentration is all positioned at melt-gas-crucible point of interface place, and this arrives point of interface place because crucible structure blocks air-flow, the SiO component of volatilization cannot be taken away.Comparison diagram 3 (a) and the CO concentration distribution in Fig. 3 (b), can find that U-shaped deck design on the CO concentration impact above bath surface significantly.For straight cover plate and U-shaped deck design, the concentration magnitude of silicon melt surface CO is respectively 10
-11with 10
-29mol/cm
3.This is because the CO impurity composition that U-shaped covering plate structure lower cover and crucible internal walls, narrow and small U-shaped gap between silicon melt surface make graphite member surface produce through chemical reaction under the high temperature conditions arrives bath surface by gas backstreaming and diffusion transmission become very difficult.
As shown in Figure 4, be O, C impurity profile in silicon melt under different covering plate structure.Can find, compare straight cover plate, under U-shaped covering plate structure, in silicon melt, O impurity concentration reduces to some extent.Covering plate structure has a significant impact C impurity concentration tool in silicon melt.Comparison diagram 4 (a) and the C concentration distribution in Fig. 4 (b), can find, for straight cover plate, C impurity concentration is about 10
17atoms/cm
3.For U-shaped cover plate, the C impurity concentration in silicon melt is very little.
Utilize different covering plate structure to carry out ingot casting experiment, contrast finds, under U-shaped cover plate, ingot top C foreign matter content is less, and surface-brightening, ingot casting is best in quality.Find in the production process of follow-up evolution, cut-out, grinding, chamfering, section and cell piece, adopt the crystal silicon ingot casting that U-shaped deck design is produced, fragmentation rate is lower than the ingot casting under common straight cover plate.Visible, adopt U-shaped deck design can improve utilization ratio and the section yield of silicon material, reduce production cost.
In sum, the crucible cover plate device of the high-purity crystal silicon ingot casting of the preparation utilizing the utility model to provide, the air current composition between crucible cover plate and silicon area can be improved, increase impurity composition in furnace chamber and arrived the resistance on silicon material or silicon melt surface by gas backstreaming and diffusion, avoid the probability of impurity composition recontamination silicon material or silicon melt, the C foreign matter content in ingot casting is significantly reduced, improve the quality of silicon crystal, improve utilization ratio and the section yield of silicon material simultaneously, reduce production cost.
Claims (7)
1. prepare a crucible cover plate device for high-purity crystal silicon ingot casting, it is characterized in that: comprise U-shaped crucible cover plate (3), shielding gas inlet pipe (1), sliding sleeve (2), crucible cover plate elevating lever (6) and cover plate lifting device (7); Wherein, described U-shaped crucible cover plate (3) center offers for the ventilating pit to furnace interior conveying shielding gas; The sliding sleeve (2) that U-shaped crucible cover plate (3) is arranged by its ventilating pit place is slidably connected with shielding gas inlet pipe (1); The below of crucible cover plate elevating lever (6) is connected with U-shaped crucible cover plate (3), connects above it with cover plate lifting device (7).
2. a kind of crucible cover plate device preparing high-purity crystal silicon ingot casting according to claim 1, is characterized in that: described U-shaped crucible cover plate (3) is for having the C/C cover plate of passivating coating, and its fusing point is greater than 1800K.
3. a kind of crucible cover plate device preparing high-purity crystal silicon ingot casting according to claim 1, it is characterized in that: U-shaped crucible cover plate (3) is U-shape groove, the thickness of U-shaped crucible cover plate (3) surrounding sidewall is consistent with horizontal component, and thickness is 2-10 millimeter, the Sidewall Height of U-shaped crucible cover plate (3) is 40-70 millimeter.
4. a kind of crucible cover plate device preparing high-purity crystal silicon ingot casting according to claim 1, it is characterized in that: the shape of the ventilating pit that U-shaped crucible cover plate (3) center is offered is circular port, the diameter range of described circular port is 60-110 millimeter.
5. a kind of crucible cover plate device preparing high-purity crystal silicon ingot casting according to claim 1, it is characterized in that: U-shaped crucible cover plate (3) is arranged in quartz crucible (4), and U-shaped crucible cover plate (3) is 30-50 millimeter with the spacing of quartz crucible (4) inwall.
6. a kind of crucible cover plate device preparing high-purity crystal silicon ingot casting according to claim 2, is characterized in that: be silicon area (5) in quartz crucible (4).
7. a kind of crucible cover plate device preparing high-purity crystal silicon ingot casting according to claim 1; it is characterized in that: this crucible cover plate vibrational power flow has two set crucible cover plate elevating levers (6) and cover plate lifting device (7), two set crucible cover plate elevating levers (6) and cover plate lifting device (7) are symmetricly set on the both sides of shielding gas inlet pipe (1) respectively.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113447394A (en) * | 2021-07-13 | 2021-09-28 | 西北大学 | Complex organic mixture simulated distillation device and method based on thermogravimetric analyzer |
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2015
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113447394A (en) * | 2021-07-13 | 2021-09-28 | 西北大学 | Complex organic mixture simulated distillation device and method based on thermogravimetric analyzer |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Jiangsu Xiexin Soft Control Equipment Technology Development Co.,Ltd. Assignor: Xi'an Jiaotong University Contract record no.: 2016610000014 Denomination of utility model: Prepare crucible apron device of high-purity crystal silicon ingot casting Granted publication date: 20150826 License type: Exclusive License Record date: 20160303 |
|
| LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
| EC01 | Cancellation of recordation of patent licensing contract |
Assignee: Jiangsu Xiexin Soft Control Equipment Technology Development Co.,Ltd. Assignor: Xi'an Jiaotong University Contract record no.: 2016610000014 Date of cancellation: 20181109 |
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| EC01 | Cancellation of recordation of patent licensing contract | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150826 Termination date: 20180313 |
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| CF01 | Termination of patent right due to non-payment of annual fee |