CN204144303U - There is the epitaxial growth structure of Low dark curient high-luminous-efficiency - Google Patents
There is the epitaxial growth structure of Low dark curient high-luminous-efficiency Download PDFInfo
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- CN204144303U CN204144303U CN201420009213.6U CN201420009213U CN204144303U CN 204144303 U CN204144303 U CN 204144303U CN 201420009213 U CN201420009213 U CN 201420009213U CN 204144303 U CN204144303 U CN 204144303U
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Abstract
The utility model relates to a kind of epitaxial growth structure, and especially a kind of epitaxial growth structure with Low dark curient high-luminous-efficiency, belongs to the technical field of semiconductor epitaxial growth.According to the technical scheme that the utility model provides, described in there is the epitaxial growth structure of Low dark curient high-luminous-efficiency, comprise substrate and be grown on the semiconductor light emitting structure on described substrate; Described semiconductor light emitting structure comprises the resilient coating be grown on substrate, on described resilient coating, growth has N-type compound semiconductor material layer, on described N-type compound semiconductor material layer, growth has active layer, on described active layer, growth has electronics to overflow barrier layer, and described electronics overflows growth on barrier layer P type compound semiconductor material layer.The utility model compact conformation, luminous efficiency is high, Low dark curient and have stronger resistance big current ability, reduce further cost, is more suitable for the growth of large-size epitaxial wafer, and technique is convenient, safe and reliable.
Description
Technical field
The utility model relates to a kind of epitaxial growth structure, and especially a kind of epitaxial growth structure with Low dark curient high-luminous-efficiency, belongs to the technical field of semiconductor epitaxial growth.
Background technology
LED is as a kind of novel solid-state illumination product, due to it possessed that volume is little, caloric value is low, power consumption little (operating state of low-voltage, low current), shatter-proof and shock-resistant, non-thermal radiation, life-span long (more than 100,000 hours), fast response time, reliability high, become the main product of lighting source of new generation.If but think to substitute conventional light source completely, inside and outside quantum efficiency will be improved further, and will reduce costs further.
At present, the LED epitaxial growth of main flow is growing GaN structure on a sapphire substrate, the lattice mismatch higher due to both existence and thermal mismatching, total inside is caused to have very large stress to need release, traditional AlN or GaN buffer layer structure can discharge the stress of part, but still some undelivered stress can cause material itself to have higher dislocation density, the ability of the electric leakage increase of LED or heavy current bombardment is caused to decline, under serious conditions, the fault in material that dislocation causes can extend to active area, causes the internal quantum efficiency of material itself to decline.Although the thickness increasing N-type GaN can suppress the extension of segmental defect, the method not only makes LED cost increase, and the blocked up meeting of N-type GaN causes the problem of light loss; In addition, large-size epitaxial wafer be not suitable for this kind of settling mode.Therefore reach in the urgent need to improving existing epitaxial structure the object improving LED internal quantum efficiency, promote reliability and reduce costs.
Summary of the invention
The purpose of this utility model overcomes the deficiencies in the prior art, a kind of epitaxial growth structure with Low dark curient high-luminous-efficiency is provided, its compact conformation, luminous efficiency is high, Low dark curient and have stronger resistance big current ability, reduce further cost, is more suitable for the growth of large-size epitaxial wafer, technique is convenient, safe and reliable.
According to the technical scheme that the utility model provides, described in there is the epitaxial growth structure of Low dark curient high-luminous-efficiency, comprise substrate and be grown on the semiconductor light emitting structure on described substrate; Described semiconductor light emitting structure comprises the resilient coating be grown on substrate, on described resilient coating, growth has N-type compound semiconductor material layer, on described N-type compound semiconductor material layer, growth has active layer, on described active layer, growth has electronics to overflow barrier layer, and described electronics overflows growth on barrier layer P type compound semiconductor material layer.
Described resilient coating comprises the first resilient coating, the second resilient coating, three buffer layer and the 4th resilient coating; The thickness of the first resilient coating, the second resilient coating, three buffer layer and the 4th resilient coating is 5 ~ 50nm.
Described first resilient coating is AlN layer, and the second resilient coating is GaN layer, and three buffer layer is AlGaN layer, and the 4th resilient coating is GaN layer.
Described N-type compound semiconductor material layer is N-type GaN layer.Described P type compound semiconductor material layer is P type GaN layer.
Advantage of the present utility model: by the growth of four step resilient coatings, efficiently solve the lattice mismatch of substrate and GaN material and the problem of thermal mismatching, release stress greatly, thus reach reduction dislocation density, improve the quality of crystal growth, whole epitaxial structure is made to have higher antistatic effect, lower electric leakage, owing to inhibit segmental defect to the extension of active area, also helpful to raising internal quantum efficiency, and this kind of structure is more suitable for the growth of large-size epitaxial wafer, this novel process and existing process compatible, technique is convenient, safe and reliable.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Description of reference numerals: 1-substrate, 2-first resilient coating, 3-second resilient coating, 4-three buffer layer, 5-the 4th resilient coating, 6-N type compound semiconductor material layer, 7-active layer, 8-electronics overflow barrier layer and 9-P type compound semiconductor material layer.
Embodiment
Below in conjunction with concrete drawings and Examples, the utility model is described in further detail.
As shown in Figure 1: in order to improve antistatic effect, reduce electric leakage, improve light extraction efficiency, the utility model comprises substrate 1 and is grown on the semiconductor light emitting structure on described substrate 1; Described semiconductor light emitting structure comprises the resilient coating be grown on substrate 1, on described resilient coating, growth has N-type compound semiconductor material layer 6, on described N-type compound semiconductor material layer 6, growth has active layer 7, on described active layer 7, growth has electronics to overflow barrier layer 8, and described electronics overflows growth on barrier layer 8 P type compound semiconductor material layer 9.
Particularly, the material of substrate 1 can select sapphire or silicon.Described resilient coating comprises the first resilient coating 2, second resilient coating 3, three buffer layer 4 and the 4th resilient coating 5; The thickness of the first resilient coating 2, second resilient coating 3, three buffer layer 4 and the 4th resilient coating 5 is 5 ~ 50nm.Described first resilient coating 2 is AlN layer, and the second resilient coating 3 is GaN layer, and three buffer layer 4 is AlGaN layer, and the 4th resilient coating 5 is GaN layer.
Described N-type compound semiconductor material layer 6 is the N-type GaN layer of donor doping.Described P type compound semiconductor material layer 9 is the P type GaN layer of acceptor doping.It is the superlattice structure that AlGaN and GaN is formed that electronics overflows barrier layer 8
In the utility model embodiment, the first resilient coating 2 uses Al source and N
2, NH
3, growth thickness controls at 5nm ~ 50nm, and the process conditions of growth comprise: ammonia is 1 ~ 50 liter, nitrogen is 20 ~ 200 liters, growth rate controls at 200 ~ 1000nm/hour; Temperature is 500 ~ 1000 degree; Pressure is 15 ~ 300torr.Second resilient coating 3 uses Ga source, N
2, NH
3, H
2, growth thickness controls at 5nm ~ 50nm, and the process conditions of growth comprise: ammonia is 40 ~ 100 liters, nitrogen is 20 ~ 200 liters, hydrogen is 100 ~ 200 liters; Growth rate controls at 200 ~ 1000nm/hour; Temperature is 500 ~ 800 degree; Pressure is 300 ~ 600torr.
Three buffer layer 4 uses Al source, Ga source, N
2, NH
3, growth thickness controls at 5nm ~ 50nm, and the process conditions of growth comprise: ammonia is 1 ~ 50 liter, nitrogen is 20 ~ 200 liters, growth rate controls at 200 ~ 1000nm/hour; Temperature is 600 ~ 1100 degree; Pressure 1 is 5 ~ 200torr.The doping content of Al controls between 1E16 to 5E20.
4th resilient coating 5 uses Ga source, N
2, NH
3, H
2, growth thickness controls at 5nm ~ 50nm, and the process conditions of growth comprise: ammonia is 40 ~ 100 liters, nitrogen is 20 ~ 200 liters, hydrogen is 50 ~ 200 liters; Growth rate controls at 200 ~ 1000nm/hour; Temperature 500 ~ 800 degree; Pressure is 200 ~ 600torr.
The utility model on substrate 1 raw semiconductor light emitting structure conventional Metal Organic Vapor epitaxial device can be adopted to grow obtain, described epitaxial structure is specially adapted to the epitaxial wafer of the blue white light of large scale.
The utility model is by the growth of four step resilient coatings, efficiently solve substrate 1 and the lattice mismatch of GaN material and the problem of thermal mismatching, release stress greatly, thus reach reduction dislocation density, improve the quality of crystal growth, whole epitaxial structure is made to have higher antistatic effect, lower electric leakage, owing to inhibit segmental defect to the extension of active area 7, also helpful to raising internal quantum efficiency, and this kind of structure is more suitable for the growth of large-size epitaxial wafer, this novel process and existing process compatible, technique is convenient, safe and reliable.
Claims (1)
1. there is an epitaxial growth structure for Low dark curient high-luminous-efficiency, the semiconductor light emitting structure comprising substrate (1) and be grown on described substrate (1); It is characterized in that: described semiconductor light emitting structure comprises the resilient coating be grown on substrate (1), on described resilient coating, growth has N-type compound semiconductor material layer (6), the upper growth of described N-type compound semiconductor material layer (6) has active layer (7), the upper growth of described active layer (7) has electronics to overflow barrier layer (8), and described electronics overflows the upper growth in barrier layer (8) P type compound semiconductor material layer (9);
Described resilient coating comprises the first resilient coating (2), the second resilient coating (3), three buffer layer (4) and the 4th resilient coating (5); The thickness of the first resilient coating (2), the second resilient coating (3), three buffer layer (4) and the 4th resilient coating (5) is 5 ~ 50nm;
Described first resilient coating (2) is AlN layer, and the second resilient coating (3) is GaN layer, and three buffer layer (4) is AlGaN layer, and the 4th resilient coating (5) is GaN layer;
Described N-type compound semiconductor material layer (6) is N-type GaN layer;
Described P type compound semiconductor material layer (9) is P type GaN layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420009213.6U CN204144303U (en) | 2014-01-07 | 2014-01-07 | There is the epitaxial growth structure of Low dark curient high-luminous-efficiency |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420009213.6U CN204144303U (en) | 2014-01-07 | 2014-01-07 | There is the epitaxial growth structure of Low dark curient high-luminous-efficiency |
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| CN204144303U true CN204144303U (en) | 2015-02-04 |
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| CN201420009213.6U Expired - Fee Related CN204144303U (en) | 2014-01-07 | 2014-01-07 | There is the epitaxial growth structure of Low dark curient high-luminous-efficiency |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105023976A (en) * | 2015-06-10 | 2015-11-04 | 湘能华磊光电股份有限公司 | An LED epitaxy growth method |
-
2014
- 2014-01-07 CN CN201420009213.6U patent/CN204144303U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105023976A (en) * | 2015-06-10 | 2015-11-04 | 湘能华磊光电股份有限公司 | An LED epitaxy growth method |
| CN105023976B (en) * | 2015-06-10 | 2017-08-25 | 湘能华磊光电股份有限公司 | A kind of LED epitaxial growth methods |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: JIANGSU XINGUANGLIAN SEMICONDUCTORS CO., LTD. Effective date: 20150407 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150407 Address after: 214192 Wuxi, Xishan, Xishan Economic Development Zone, North Road, unity, No. 18, No. Patentee after: JIANGSU XINGUANGLIAN TECHNOLOGY Co.,Ltd. Patentee after: JIANGSU XINGUANGLIAN SEMICONDUCTOR Co.,Ltd. Address before: 214192 Wuxi, Xishan, Xishan Economic Development Zone, North Road, unity, No. 18, No. Patentee before: JIANGSU XINGUANGLIAN TECHNOLOGY Co.,Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150204 Termination date: 20220107 |