CN204138820U - Remove the device of polycrystalline silicon texturing rear surface porous silicon - Google Patents

Remove the device of polycrystalline silicon texturing rear surface porous silicon Download PDF

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Publication number
CN204138820U
CN204138820U CN201420474522.0U CN201420474522U CN204138820U CN 204138820 U CN204138820 U CN 204138820U CN 201420474522 U CN201420474522 U CN 201420474522U CN 204138820 U CN204138820 U CN 204138820U
Authority
CN
China
Prior art keywords
groove
alkali
porous silicon
major trough
alkali groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201420474522.0U
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Chinese (zh)
Inventor
赵卫东
赵雅
赵枫
杨冬琴
汤云鶴
王玉龙
郭盼盼
徐建鸿
龚骏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JIANGSU ECONESS ENERGY CO Ltd
Original Assignee
JIANGSU ECONESS ENERGY CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JIANGSU ECONESS ENERGY CO Ltd filed Critical JIANGSU ECONESS ENERGY CO Ltd
Priority to CN201420474522.0U priority Critical patent/CN204138820U/en
Application granted granted Critical
Publication of CN204138820U publication Critical patent/CN204138820U/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

The utility model relates to the device of a kind of thorough removal polycrystalline silicon texturing rear surface porous silicon, comprises alkali groove major trough, alkali groove secondary groove, medicine-chest, heating unit, water cooling plant, digital indication flow meter, manual ball valve.Absorbable organic halogens controls the stable of the alkaline solution of major trough spray, the reaction of removal porous silicon is carried out under the environment of 45 DEG C, thus thoroughly removes porous silicon, and do not damage the alkali lye shower life-span, improve the electrical property of cell piece, reduce production cost, reduce the bad order rate of cell piece.

Description

Remove the device of polycrystalline silicon texturing rear surface porous silicon
Technical field
The utility model relates to a kind of device removing porous silicon, particularly relates to a kind of device for thoroughly removing polycrystalline silicon texturing rear surface porous silicon.Belong to solar-photovoltaic technology field.
Background technology
Current crystal silicon solar energy battery industrialization technology is very ripe, and wherein matte preparation is the important procedure of crystal-silicon solar cell production process, directly affects outward appearance and the important unit for electrical property parameters such as Uoc, Isc of cell piece.When using conventional etching device, the porous silicon that after all KOH solution removes making herbs into wool under employing normal temperature, polysilicon chip surface produces, because equipment cell body is unworthy of there is any device that can control solution temperature, thus the temperature of solution can be said and to change along with the change of environment, be in not controlled state, constrain the processing procedure controllability of this procedure technology, simultaneously due to when solution is generally in close with envrionment temperature (about 25 DEG C), Solution Active is lower, be difficult to remove matte pitting, the porous silicon of dell, in order to ensure the removal effect of porous surface silicon, cell piece is sintered and can form good aluminium back surface field, obtain higher Uoc and Isc, traditional method of KOH solution that uses at normal temperatures must need the concentration increasing solution to improve cleaning performance, but it is clean that the porous silicon of matte depths still can not be made to remove, and the KOH of higher concentration adds production cost.
Summary of the invention
The purpose of this utility model is to overcome above-mentioned deficiency, provides a kind of device effectively thoroughly removing polycrystalline silicon texturing rear surface porous silicon, improves electrical performance of cell, reduces the bad order rate of production cost and cell piece.
The purpose of this utility model is achieved in that a kind of device removing polycrystalline silicon texturing rear surface porous silicon, it comprises medicine-chest, alkali groove major trough and the secondary groove of alkali groove, the outlet of described medicine-chest is connected with the import of the secondary groove of alkali groove, and primary heater is provided with between described medicine-chest and the secondary groove of alkali groove, the first manual ball valve and the first digital indication flow meter is connected with in turn at the exit end of the secondary groove of described alkali groove, finally be connected with the entrance of alkali groove major trough, the second manual ball valve and the second digital indication flow meter is connected with in turn at the exit end of described alkali groove major trough, finally the entrance of groove secondary with alkali groove is connected, secondary heating mechanism and water cooling plant is increased in the secondary groove of described alkali groove.
Compared with prior art, the beneficial effects of the utility model are:
The utility model adds heating unit to control the temperature newly adding liquid between medicine-chest and secondary groove, heating and water cooling plant is added to control the temperature of secondary groove inner liquid medicine in secondary groove inside, alkali groove master, manual ball valve and digital indication flow meter has been installed additional to control the circular flow of liquid between secondary groove, thus reach the object of the alkaline solution temperature of stability contorting major trough spray, temperature of reaction is made to maintain 45 DEG C, so just, under comparatively low alkali liquid concentration, thoroughly porous silicon can be removed, improve electrical performance of cell, reduce the bad order rate of production cost and cell piece, do not damage again the major trough alkali lye shower life-span simultaneously.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Wherein:
Medicine-chest 1
Alkali groove major trough 2
The secondary groove 3 of alkali groove
Primary heater 4
First manual ball valve 5
First digital indication flow meter 6
Second manual ball valve 7
Second digital indication flow meter 8
Secondary heating mechanism 9
Water cooling plant 10.
Embodiment
See Fig. 1, the utility model relates to a kind of device removing polycrystalline silicon texturing rear surface porous silicon, comprise medicine-chest 1, alkali groove major trough 2 and the secondary groove 3 of alkali groove, the outlet of described medicine-chest 1 is connected with the import of the secondary groove 3 of alkali groove, and primary heater 4 is provided with between described medicine-chest 1 and the secondary groove 3 of alkali groove, the first manual ball valve 5 and the first digital indication flow meter 6 is connected with in turn at the exit end of the secondary groove 3 of described alkali groove, finally be connected with the entrance of alkali groove major trough 2, the second manual ball valve 7 and the second digital indication flow meter 8 is connected with in turn at the exit end of described alkali groove major trough 2, finally the entrance of groove 3 secondary with alkali groove is connected, the circulation between alkali groove major trough 2 and secondary groove 3 solution of alkali groove is controlled by digital indication flow meter and manual ball valve, the solution temperature that alkali groove major trough 2 is sprayed out maintains 45 DEG C, improve the chemically reactive of solution, increase chemical reaction rate, the porous silicon produced after thorough removal polycrystalline silicon texturing, the solution temperature of secondary heating mechanism 9 and the secondary groove of water cooling plant 10 stability contorting is increased in the secondary groove 3 of described alkali groove.

Claims (1)

1. remove the device of polycrystalline silicon texturing rear surface porous silicon for one kind, it comprises medicine-chest (1), alkali groove major trough (2) and the secondary groove (3) of alkali groove, it is characterized in that the import of the secondary groove (3) of the outlet of described medicine-chest (1) and alkali groove is connected, and primary heater (4) is provided with between described medicine-chest (1) and the secondary groove (3) of alkali groove, the first manual ball valve (5) and the first digital indication flow meter (6) is connected with in turn at the exit end of the secondary groove (3) of described alkali groove, finally be connected with the entrance of alkali groove major trough (2), the second manual ball valve (7) and the second digital indication flow meter (8) is connected with in turn at the exit end of described alkali groove major trough (2), finally the entrance of groove (3) secondary with alkali groove is connected, secondary heating mechanism (9) and water cooling plant (10) is increased in the secondary groove (3) of described alkali groove.
CN201420474522.0U 2014-08-22 2014-08-22 Remove the device of polycrystalline silicon texturing rear surface porous silicon Expired - Fee Related CN204138820U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201420474522.0U CN204138820U (en) 2014-08-22 2014-08-22 Remove the device of polycrystalline silicon texturing rear surface porous silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201420474522.0U CN204138820U (en) 2014-08-22 2014-08-22 Remove the device of polycrystalline silicon texturing rear surface porous silicon

Publications (1)

Publication Number Publication Date
CN204138820U true CN204138820U (en) 2015-02-04

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201420474522.0U Expired - Fee Related CN204138820U (en) 2014-08-22 2014-08-22 Remove the device of polycrystalline silicon texturing rear surface porous silicon

Country Status (1)

Country Link
CN (1) CN204138820U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107681021A (en) * 2017-09-26 2018-02-09 无锡琨圣科技有限公司 A kind of reaming groove and its expanding method for the black silicon board of wet method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107681021A (en) * 2017-09-26 2018-02-09 无锡琨圣科技有限公司 A kind of reaming groove and its expanding method for the black silicon board of wet method

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150204

Termination date: 20200822

CF01 Termination of patent right due to non-payment of annual fee