CN105023960A - Method of manufacturing antireflection texture of solar cell - Google Patents
Method of manufacturing antireflection texture of solar cell Download PDFInfo
- Publication number
- CN105023960A CN105023960A CN201510332571.XA CN201510332571A CN105023960A CN 105023960 A CN105023960 A CN 105023960A CN 201510332571 A CN201510332571 A CN 201510332571A CN 105023960 A CN105023960 A CN 105023960A
- Authority
- CN
- China
- Prior art keywords
- corrosion
- acid
- solution
- solar cell
- alkaline corrosion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 9
- 230000007797 corrosion Effects 0.000 claims abstract description 57
- 238000005260 corrosion Methods 0.000 claims abstract description 57
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 40
- 239000002253 acid Substances 0.000 claims abstract description 37
- 239000000243 solution Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 31
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000007800 oxidant agent Substances 0.000 claims abstract description 10
- 230000001590 oxidative effect Effects 0.000 claims abstract description 10
- 238000004140 cleaning Methods 0.000 claims abstract description 8
- 239000011259 mixed solution Substances 0.000 claims abstract description 4
- 229920005591 polysilicon Polymers 0.000 claims description 36
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 18
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- 230000003667 anti-reflective effect Effects 0.000 claims description 11
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical group O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 12
- 238000002310 reflectometry Methods 0.000 abstract description 9
- 238000009776 industrial production Methods 0.000 abstract description 4
- 238000011160 research Methods 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 239000003518 caustics Substances 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 4
- 239000012295 chemical reaction liquid Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 4
- 235000008216 herbs Nutrition 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 210000002268 wool Anatomy 0.000 description 3
- 239000012670 alkaline solution Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a method of manufacturing an antireflection texture of a solar cell. The method adopts a combination of acid corrosion and alkaline corrosion, an oxidant and BOE/BHF hydrofluoric acid mixed solution is used for cleaning a multicrystalline wafer damage layer, and acid corrosion is carried out and shallow alkaline corrosion is then carried out. As is shown by a research, after the acid corrosion solution is adopted for corroding the multicrystalline wafer, a uniform texture is formed for the multicrystalline wafer, and thus reflectivity of the surface of the multicrystalline wafer is reduced; and then shallow alkaline corrosion is carried out to enable a subtle Pyramid structure to be grown on the surface of the texture, reflectivity of the texture is further effectively reduced, and the conversion efficiency for the manufactured multicrystalline solar cell is improved by more than 3%. The method of the invention is suitable for manufacturing the texture on the multicrystalline silicon in large-scale industrial production, the cost is low, operation is easy, and commercial value is large; and the method can be directly applied to the existing multicrystalline wafer solar cell production line, and no extra production device needs to be added.
Description
Technical field
The invention belongs to polysilicon chip and prepare technical field of solar batteries, particularly relate to a kind of method preparing solar battery antireflective matte.
Background technology
Reached the silicon solar cell of actual application level from 1954 in U.S.'s Bell Laboratory first photoelectric conversion efficiency that be born, improve the conversion efficiency of solar cell and to reduce costs be the target that people lay siege to always.The kind of solar cell is a lot, as crystal-silicon solar cell, thin film solar cell, Ⅲ-Ⅴ compound semiconductor solar cell, group Ⅱ-Ⅵ compound semiconductor solar cell, CuInGeSe hull cell and organic semiconductor battery etc., in these solar cells, silicon solar cell is the most common.Due to the reserves very abundant (being only second to oxygen) of silicon on the earth, and along with five more than ten years semi-conductor industry development, silicon materials and device technology almost Perfect, cost is also very cheap.Therefore, the thing that the fast development of silicon solar cell is naturally namely natural.Relative to single crystal silicon material (crystaline) conventional in semi-conductor industry, polysilicon (multicrystaline), owing to having more cheap price and can meet solar cell properties requirement, therefore becomes the first-selection of industrialization large-scale production solar cell.In the production technology of silicon solar cell, silicon chip surface texturing is reducing surface reflectivity and is improving in surperficial sunken luminous energy power extremely important.Surface-texturing just refers to and forms a series of regular or different surface configuration with varying in size of random height on a surface of an.Due to the existence of matte, the reflectivity of body surface reduces greatly, and surface falls into luminous energy power and strengthens, and increases the absorption of light, effectively can improve the conversion efficiency of solar cell.
The industrial general alkaline solution chemical corrosion method of heat that adopts prepares monocrystalline silicon suede, due to the anisotropy of alkaline solution corrosion, to silicon, { corrosion rate in 111} face is significantly less than { 100} face for it, so { 100} surface forms pyramid matte, and the reflectivity of silicon chip can control about 10% by this matte.Anisotropic etch method is widely used in now the preparation of 100} single crystal silicon solar cell, but this method but effectively can not reduce the reflectivity of polysilicon.Can not why anisotropy rot etching method be applied to the making herbs into wool of polysilicon? this is because the crystal orientation of each crystal grain of polysilicon is random distribution, anisotropic alkaline corrosion liquid can only make those crystal orientation close to { grain surface of 100} has pyramid matte, and other crystal grain still have higher reflectivity, although the reflectivity of silicon chip decreases on the whole, but DeGrain, and the step that each intercrystalline causes because of different corrosion rate brings comparatively burden to further battery technique.So far, a kind of making herbs into wool technology is not still had to reach the level of Standard screen printing batch production solar cell.During alkaline corrosion corrosion polysilicon, cause the appearance of inevitable crystal particle crystal boundary profile, and the higher step produced between the crystal grain of adjacent different crystal orientations, make to produce uniform suede and knit surface, make the open circuit voltage of solar cell and efficiency cannot be satisfactory.
Polycrystalline silicon suede has become the focus of research both at home and abroad in recent years, at present the existing multiple method preparing polycrystalline silicon suede, comprises mechanical carving groove method, laser ablation method, reactive ion etching method (RIE) and isotropism chemistry etch etc.Wherein, the cost compare of mechanical carving groove and photoetching technique making herbs into wool is high, and is unfavorable for large-scale industrial production; Though RIE method can be compatible with large-scale industrial production, because RIE is a kind of technique of complexity, need complicated equipment and higher cost, hinder the large-scale production and application of this method.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of low, the easy to operate and method preparing solar battery antireflective matte of suitable for mass production of cost, and this method can make the reflectance reduction on polysilicon chip surface, improves the conversion efficiency of polycrystalline silicon solar cell.
For solving the problems of the technologies described above, the present invention is by the following technical solutions: the method preparing solar battery antireflective matte, acid etching solution cleaning polysilicon chip damage layer is adopted to carry out acid corrosion, make it to produce uniform suede and knit surface, this acid etching solution is oxidant and BOE/BHF hydrofluoric acid mixed solution; Clean routinely after acid corrosion, then adopt alkaline corrosion solution to knit surface at suede and carry out anisotropic shallow-layer alkaline corrosion, make suede knit the trickle pyramid structure of Surface Creation, this alkaline corrosion solution is potassium hydroxide or NaOH.
Oxidant is nitric acid or hydrogen peroxide.
In acid etching solution, the concentration of oxidant is 1-13 mol/L, the concentration of BOE/BHF hydrofluoric acid is 1-15 mol/L; Alkaline corrosion solution is the potassium hydroxide of 1-7 mol/L or the NaOH of 1-6 mol/L.
Acid etching solution temperature is 5-50 degree Celsius, and the acid corrosion time is 2-60 minute; Alkaline corrosion solution temperature is 30-90 degree Celsius, and the alkaline corrosion time is 10 seconds-2 minutes.
Acid corrosion is for be immersed in polysilicon chip in acid etching solution, and alkaline corrosion is for be immersed in polysilicon chip in alkaline corrosion solution.
The polysilicon chip thickness be corroded is 100-500 micron, and it is the matte that 1-15 micron is uniformly distributed trickle pyramid structure that the polysilicon chip surface after being corroded forms size.
Polysilicon chip Problems existing is corroded for conventional alkaline corrosive liquid (NaOH and KOH), we have established a kind of new method preparing solar battery antireflective matte, this method adopts acid corrosion and caustic corrosion to combine---and oxidant and BOE/BHF hydrofluoric acid mixed solution cleaning polysilicon chip damage layer carry out acid corrosion and carry out shallow-layer caustic corrosion again.Research shows, after the present invention adopts acid etching solution to corrode polysilicon chip, polysilicon chip can form uniform matte, makes the reflectance reduction on polysilicon chip surface; Carrying out shallow-layer caustic corrosion more then makes suede knit the trickle pyramid structure of Surface Creation, effectively reduces matte reflectivity further, improves the conversion efficiency more than 3% of the polysilicon solar cell made.Cost of the present invention is low, easy to operate, is suitable for preparing matte on the polysilicon of large-scale industrial production, has larger commercial value; Meanwhile, the present invention also can directly apply to existing polysilicon chip manufacture of solar cells line and not need to add extra production equipment; In addition, this method also can be used on other similar solar cells.
Embodiment
Embodiment 1
1, prepare with p-type polysilicon chip, thickness is 500 microns.
2, acetone, ethanol, trichloroethylene is used to do conventional cleaning to silicon chip.
3, prepare nitric acid 10 mol/L and BOE/BHF hydrofluoric acid 12 mol/L, potassium hydroxide solution 4 mol/L, add the solution of deionized water preparation desired concn, stir under 25 ' C environment and place, make each solution be cooled to 25 DEG C, uniform ingredients.
4, configure acid etching solution, oxidant nitric acid and BOE/BHF are mixed by 4 to 1.
5, polysilicon chip is immersed in acid etching solution, uses timer timing, by the temperature of acid and alkali-resistance thermometer test reaction liquid in course of reaction, control temperature 5-50 degree Celsius, the acid corrosion time is 2-50 minute, temperature height then suitably reduces etching time.
6, acid corrosion terminate after silicon chip deionized water repeatedly rush Xian for several times.Detect through Electronic Speculum, silicon chip produces uniform suede and knits surface.
7, polysilicon chip is immersed in caustic corrosion solution potassium hydroxide, uses timer timing, and by the temperature of acid and alkali-resistance thermometer test reaction liquid in course of reaction, control temperature is 30-90 degree Celsius, the caustic corrosion time is 10 seconds-2 minutes.
8, caustic corrosion terminate after silicon chip deionized water repeatedly rush Xian for several times, use acetone, ethanol, trichloroethylene to do conventional cleaning to silicon chip, dry.Detect through Electronic Speculum, it is the matte that 1-15 micron is uniformly distributed trickle pyramid structure that polysilicon chip surface after corrosion forms size, than the matte of a common step sour corrosion method gained, there is more trickle light trapping structure, after covering antireflection film, promote the conversion efficiency more than 3% of solar cell.
Embodiment 2
1, adopt N-shaped polysilicon chip, thickness is 500 microns, uses acetone, ethanol, trichloroethylene to do conventional cleaning to silicon chip.
2, prepare nitric acid 10 mol/L and BOE/BHF hydrofluoric acid 12 mol/L, potassium hydroxide solution 4 mol/L, add the solution of deionized water preparation desired concn, stir under 25 ' C environment and place, make each solution be cooled to 25 DEG C, uniform ingredients.
3, configure acid etching solution, oxidant nitric acid and BOE/BHF are mixed by 4 to 1.
4, polysilicon chip is immersed in acid etching solution, use timer timing, by the temperature of acid and alkali-resistance thermometer test reaction liquid in course of reaction, notice that N-shaped polysilicon chip is faster than the acid corrosion speed of p-type polysilicon chip, control temperature 5-50 degree Celsius, the acid corrosion time is 2-50 minute, temperature height then suitably reduces etching time.
5, acid corrosion terminate after silicon chip deionized water repeatedly rush Xian for several times.Detect through Electronic Speculum, silicon chip produces uniform suede and knits surface.
6, polysilicon chip is immersed in caustic corrosion solution potassium hydroxide, uses timer timing, and by the temperature of acid and alkali-resistance thermometer test reaction liquid in course of reaction, control temperature is 30-90 degree Celsius, the caustic corrosion time is 10 seconds-2 minutes.
7, caustic corrosion terminate after silicon chip deionized water repeatedly rush Xian for several times, use acetone, ethanol, trichloroethylene to do conventional cleaning to silicon chip, dry.Detect through Electronic Speculum, it is the matte that 1-15 micron is uniformly distributed trickle pyramid structure that polysilicon chip surface after corrosion forms size, than the matte of a common step sour corrosion method gained, there is more trickle light trapping structure, can promote the conversion efficiency more than 3% of solar cell after covering antireflection film, N-shaped polysilicon is that the silicon chip efficiency of substrate is higher.
Claims (6)
1. prepare a method for solar battery antireflective matte, it is characterized in that: adopt acid etching solution cleaning polysilicon chip damage layer to carry out acid corrosion, make it to produce uniform suede and knit surface, this acid etching solution is oxidant and BOE/BHF hydrofluoric acid mixed solution; Clean routinely after acid corrosion, then adopt alkaline corrosion solution to knit surface at suede and carry out anisotropic shallow-layer alkaline corrosion, make suede knit the trickle pyramid structure of Surface Creation, this alkaline corrosion solution is potassium hydroxide or NaOH.
2. the method preparing solar battery antireflective matte according to claim 1, is characterized in that: described oxidant is nitric acid or hydrogen peroxide.
3. the method preparing solar battery antireflective matte according to claim 2, is characterized in that: in described acid etching solution, the concentration of oxidant is 1-13 mol/L, the concentration of BOE/BHF hydrofluoric acid is 1-15 mol/L; Described alkaline corrosion solution is the potassium hydroxide of 1-7 mol/L or the NaOH of 1-6 mol/L.
4. the method preparing solar battery antireflective matte according to claim 1, is characterized in that: described acid etching solution temperature is 5-50 degree Celsius, and the acid corrosion time is 2-60 minute; Described alkaline corrosion solution temperature is 30-90 degree Celsius, and the alkaline corrosion time is 10 seconds-2 minutes.
5. the method preparing solar battery antireflective matte according to claim 1, is characterized in that: described acid corrosion is for be immersed in polysilicon chip in acid etching solution, and described alkaline corrosion is for be immersed in polysilicon chip in alkaline corrosion solution.
6. the method preparing solar battery antireflective matte according to claim 1, it is characterized in that: the described polysilicon chip thickness be corroded is 100-500 micron, it is the matte that 1-15 micron is uniformly distributed trickle pyramid structure that the described polysilicon chip surface after being corroded forms size.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510332571.XA CN105023960A (en) | 2014-12-19 | 2015-06-16 | Method of manufacturing antireflection texture of solar cell |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410795972 | 2014-12-19 | ||
| CN201510332571.XA CN105023960A (en) | 2014-12-19 | 2015-06-16 | Method of manufacturing antireflection texture of solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105023960A true CN105023960A (en) | 2015-11-04 |
Family
ID=54413785
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510332571.XA Pending CN105023960A (en) | 2014-12-19 | 2015-06-16 | Method of manufacturing antireflection texture of solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105023960A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113506724A (en) * | 2021-07-05 | 2021-10-15 | 扬州虹扬科技发展有限公司 | Method for treating GPP silicon wafer before nickel plating |
| CN115172488A (en) * | 2022-05-31 | 2022-10-11 | 晶科能源(上饶)有限公司 | Solar cell and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103151423A (en) * | 2013-02-28 | 2013-06-12 | 常州捷佳创精密机械有限公司 | Texturing and cleaning process method of polysilicon wafer |
| CN103413759A (en) * | 2013-08-07 | 2013-11-27 | 上饶光电高科技有限公司 | Texture surface making method of polycrystalline silicon wafers |
| CN103541017A (en) * | 2013-10-28 | 2014-01-29 | 山东力诺太阳能电力股份有限公司 | Polycrystalline silicon solar cell wet-process texturization method |
-
2015
- 2015-06-16 CN CN201510332571.XA patent/CN105023960A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103151423A (en) * | 2013-02-28 | 2013-06-12 | 常州捷佳创精密机械有限公司 | Texturing and cleaning process method of polysilicon wafer |
| CN103413759A (en) * | 2013-08-07 | 2013-11-27 | 上饶光电高科技有限公司 | Texture surface making method of polycrystalline silicon wafers |
| CN103541017A (en) * | 2013-10-28 | 2014-01-29 | 山东力诺太阳能电力股份有限公司 | Polycrystalline silicon solar cell wet-process texturization method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113506724A (en) * | 2021-07-05 | 2021-10-15 | 扬州虹扬科技发展有限公司 | Method for treating GPP silicon wafer before nickel plating |
| CN113506724B (en) * | 2021-07-05 | 2022-07-01 | 扬州虹扬科技发展有限公司 | Method for treating GPP silicon wafer before nickel plating |
| CN115172488A (en) * | 2022-05-31 | 2022-10-11 | 晶科能源(上饶)有限公司 | Solar cell and manufacturing method thereof |
| CN115172488B (en) * | 2022-05-31 | 2023-10-20 | 晶科能源(上饶)有限公司 | Solar cell manufacturing method and solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108054224B (en) | Textured structure of crystalline silicon solar cell and preparation method thereof | |
| Chu et al. | A simple and cost-effective approach for fabricating pyramids on crystalline silicon wafers | |
| CN106653889B (en) | Woolen-making liquid and its application for ablation of solar cells silicon chip surface | |
| CN102703989B (en) | Class monocrystalline solar cells leather producing process | |
| CN102181935B (en) | Method and corrosive liquid for making texture surface of monocrystalline silicon | |
| CN103337560B (en) | For the preparation method of the three-dimensional silicon nano structure of solar cell | |
| CN102694075A (en) | Method of preparing inclined silicon nanowire array in electric field | |
| CN102931290A (en) | Polycrystalline silicon solar cell reworking method without damaging suede | |
| CN106601835A (en) | Control method for controlling suede dimension of monocrystalline silicon heterojunction solar battery cell | |
| CN106601862A (en) | Texturing method for reducing reflectivity of monocrystalline silicon heterojunction solar cell | |
| CN102593268A (en) | Method for carrying out cleaning and texture-surface-making on heterojunction solar cells by using texturing smoothing and rounding technique | |
| CN105405755A (en) | Acidic texturing liquid for silicon wafer pyramid texturing, texturing method and silicon wafer formed in texturing manner through adoption of texturing method | |
| CN104362221A (en) | Method for preparing polycrystalline silicon solar cell by RIE texturing | |
| CN107393818B (en) | Acid-base secondary texturing method of polycrystalline silicon solar cell and polycrystalline silicon thereof | |
| CN103219427A (en) | Method for realizing single-sided texturing of high-light-trapping nano structure | |
| CN104966762A (en) | Preparation method of texturized surface structure of crystalline silicon solar cell | |
| CN107611226B (en) | A kind of crystalline silicon method for manufacturing textured surface, solar battery and preparation method thereof | |
| CN104576813A (en) | Nanostructure suede of photoelectric material surface and preparation method of nanostructure suede | |
| CN103117330B (en) | A kind of preparation method of solar cell | |
| CN204311157U (en) | For the silicon chip of solar cell | |
| CN204167329U (en) | Metallurgy polycrystalline silicon solar battery sheet and solar panel | |
| CN101976700B (en) | Post-cleaning technology of silicon wafer | |
| CN105133038A (en) | Preparing method for polycrystalline silicon of efficient nanometer textured structure and application thereof | |
| CN105023960A (en) | Method of manufacturing antireflection texture of solar cell | |
| CN204315589U (en) | A kind of suede structure of polysilicon solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151104 |
|
| RJ01 | Rejection of invention patent application after publication |