CN204102932U - A kind of White-light LED chip - Google Patents
A kind of White-light LED chip Download PDFInfo
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- CN204102932U CN204102932U CN201420423607.6U CN201420423607U CN204102932U CN 204102932 U CN204102932 U CN 204102932U CN 201420423607 U CN201420423607 U CN 201420423607U CN 204102932 U CN204102932 U CN 204102932U
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Abstract
The utility model discloses a kind of White-light LED chip, comprise a LED chip and for changing photochromic prefabricated profiled light conversion layer, described light conversion layer is provided with the installation cavity of the described LED chip of an accommodation, and four sides of described LED chip and exiting surface are all wrapped up by described installation cavity.The utility model, by prefabricated profiled light conversion layer, can not only promote the luminous efficiency of White-light LED chip, and existing way can be avoided to allow LED chip bottom electrode be subject to the advantage polluted and production and processing is easy, product yield is high.
Description
Technical field
The utility model belongs to LED technology field, is specifically related to a kind of White-light LED chip.
Background technology
White-light LED chip is the LED chip that can directly emit white light adopting Chip Scale Package (hereinafter referred to as " CSP ") technology to realize, such chip has that volume is little, lighting angle large, can resistance to large driven current density, low cost of manufacture, facilitate the advantages such as downstream client's Design of Luminaires.
The common configuration feature of current LED white chip comprises: flip chip structure, and electrode is arranged on bottom, positive upper surface and 4 equal coating fluorescent powders in side.The phosphor powder layer of positive upper surface and four sides generally adopts the flourescent sheet technique of Molding and pressing semi-solid preparation to realize, and the phosphor powder layer of positive upper surface and four sides is the integrated structures of same material.U.S. Patent Application No. US 2013/0183777 discloses a kind of LED chip reflow soldering on substrate, and by Molding mold guard electrode, Injection Molding mode realizes fluorescent glue and makes, and this process mould difficulty of processing is large, not easily aims at.And for example U.S. Patent Application No. US 2013/0029439 discloses a kind of manufacture method of White-light LED chip, flip LED chips is first placed on an interim support plate, and surrounding arranges baffle plate, and some fluorescent glue strikes off again, cutting into single, there is bottom land electrode fouling in this technique.Chinese Patent Application No. CN 201120150362.0, discloses a kind of White-light LED chip of positive assembling structure, adopts photoresist blocking electrode, and spin coating proceeding makes fluorescence coating, but the phosphor powder layer uniformity of spin coating proceeding is poor.
Utility model content
The purpose of this utility model is to provide a kind of White-light LED chip, easily pollutes LED chip electrode to solve in existing manufacture craft process and causes the failure welding of operation and the problem of White-light LED chip uniformity of luminance after White-light LED chip.
In order to realize above-mentioned utility model object, the technical scheme that the utility model adopts is as follows:
A kind of White-light LED chip, comprise a LED chip and for changing photochromic prefabricated profiled light conversion layer, described light conversion layer is provided with the installation cavity of the described LED chip of an accommodation, and four sides of described LED chip and exiting surface are all wrapped up by described installation cavity.
Further, the thickness of described light conversion layer is 100 microns-1000 microns.
Further, the material of described light conversion layer to comprise in ceramic base, silica gel, epoxy resin or glass one or more.
Further, the length of the installation cavity of described light conversion layer and wide area are the length of LED chip and 1.0-1.2 times of wide area, and it is highly less than or equal to 30% of light conversion layer thickness.
Further: described installation cavity inner surface is provided with location pattern, and described White-light LED chip comprises subsides flip chip type LED chip, pastes formal dress type LED chip and paste vertical-type LED chip; The installation cavity inner surface of described subsides flip type LED chip is provided with cross, square or rounded groove; The installation cavity inner surface of described subsides formal dress type LED chip is provided with square, the circular or criss-cross perforate more than 2; The installation cavity inner surface of described subsides vertical-type LED chip is provided with square, the circular or criss-cross perforate more than 1.
Further, described White-light LED chip is for pasting flip type LED chip, it comprises epitaxial substrate layer, grow the n type gallium nitride layer at described epitaxial substrate layer upper surface, grow the luminescent layer at described n type gallium nitride layer segment upper surface, grow the N-type ohmic contact layer at described n type gallium nitride layer segment upper surface, the P type gallium nitride layer that growth is surperficial on the light-emitting layer and the P type ohmic contact layer grown at described P type gallium nitride layer portion of upper surface, at described P type gallium nitride layer, P type ohmic contact layer, n type gallium nitride layer and N-type ohmic contact layer upper surface are also provided with insulating barrier, the insulating barrier of described P type ohmic contact layer upper surface offers the first through hole, the insulating barrier of described N-type ohmic contact layer upper surface offers the second through hole, P electrode bonded layer and N electrode bonded layer is independently provided with at described insulating barrier upper surface, described P electrode bonded layer runs through the first through hole and is electrically connected with P type ohmic contact layer, described N electrode bonded layer runs through the second through hole and is electrically connected with N-type ohmic contact layer.
Further, described White-light LED chip is formal dress type LED chip, it comprises epitaxial substrate layer, grow the n type gallium nitride layer at described epitaxial substrate layer upper surface, grow the luminescent layer at described n type gallium nitride layer segment upper surface, at the N-type ohmic contact layer of described n type gallium nitride layer segment upper surface, the P type gallium nitride layer on surface and the P type ohmic contact layer at described P type gallium nitride layer portion of upper surface on the light-emitting layer, one transparency conducting layer covers the P type ohmic contact layer of described formal dress type LED chip, one insulating barrier covers the part surface of this transparency conducting layer, first, two metal pads are separately positioned on described N-type ohmic contact layer and this surface of insulating layer.
Further, described White-light LED chip is vertical-type LED chip, it comprises metallic substrate layer, is bonded in the P type gallium nitride layer of described metallic substrate layer upper surface, grows at the luminescent layer of described P type gallium nitride layer portion of upper surface, the n type gallium nitride layer growing surface on the light-emitting layer and the growth N-type ohmic contact layer at described n type gallium nitride layer segment upper surface, and described N-type ohmic contact layer is provided with metal pad.
LED chip, under same design, is directly mounted on a prefabricated profiled light conversion layer by the utility model, realizes the coated LED chip of light conversion layer.This structure of the present utility model is conducive to selection and loses money instead of making money type LED chip on prefabricated profiled light conversion layer, avoids existing way to allow LED chip bottom electrode be polluted, the welding yield that after improving White-light LED chip, operation is applied.
Therefore, the utility model can not only promote the luminous efficiency of White-light LED chip, and existing way can be avoided to allow LED chip bottom electrode be subject to the advantage polluted and production and processing is easy, product yield is high.
Accompanying drawing explanation
Fig. 1 a is the structural representation (having light conversion layer) of the utility model flip chip type White-light LED chip;
Fig. 1 b is the structural representation (without light conversion layer) of the utility model flip chip type White-light LED chip;
Fig. 2 is the structural representation of the utility model formal dress type White-light LED chip;
Fig. 3 is the structural representation of the utility model vertical-type White-light LED chip;
Fig. 4 a-Fig. 4 b is a kind of structural representation installing cavity of the utility model embodiment 1;
Fig. 5 a-Fig. 5 b is the structural representation of the another kind installation cavity of the utility model embodiment 1;
Fig. 6 a-Fig. 6 b is the structural representation of the third installation cavity of the utility model embodiment 1.
Fig. 7 a-Fig. 7 b is the structural representation of the 4th kind of installation cavity of the utility model embodiment 1.
Fig. 8 is the structural representation of the white LED lamp of the utility model embodiment 1.
Fig. 9 a-Fig. 9 b is a kind of structural representation installing cavity of the utility model embodiment 2.
Figure 10 a-Figure 10 b is the structural representation of the another kind installation cavity of the utility model embodiment 2.
Figure 11 a-Figure 11 b is the structural representation of the third installation cavity of the utility model embodiment 2.
Figure 12 a-Figure 12 b is a kind of structural representation installing cavity of the utility model embodiment 3.
Figure 13 a-Figure 13 b is the structural representation of the another kind installation cavity of the utility model embodiment 3.
Figure 14 a-Figure 14 b is the structural representation of the third installation cavity of the utility model embodiment 3.
In figure:
100, flip type LED chip
101, epitaxial substrate layer 102, n type gallium nitride layer
103, luminescent layer 104, N-type ohmic contact layer
105, P type gallium nitride layer 106, P type ohmic contact layer
107, insulating barrier 108, P electrode bonded layer
109, N electrode bonded layer
200, light conversion layer thin slice
300, electrode bonded layer
400, electrode bonded layer
Embodiment
In order to understand the purpose of this utility model, characteristic sum effect fully, be described further below with reference to the technique effect of accompanying drawing to design of the present utility model, concrete structure and generation.
As shown in Fig. 1 a, Fig. 2 and Fig. 3, present embodiment discloses a kind of White-light LED chip, comprise LED chip 100 and a prefabricated profiled light conversion layer 200 for Color Conversion, described LED chip 100 is mounted type chip.Described light conversion layer 200 is provided with the installation cavity of the described LED chip 100 of an accommodation, and four sides of LED chip 100 and exiting surface are all wrapped up by described installation cavity.The light of the blue light that LED chip 100 sends or other color becomes white light after the conversion of light conversion layer.
Preferably, described light conversion layer is thin slice, and its thickness is between 100 microns-1000 microns.The material of light conversion layer is one or more combinations in ceramic base, silica gel, epoxy, glass, and the light conversion layer after combination is current material.Its manufacture method is as 1), fluorescent material is mixed into repressed in pottery, sintering, grinding, cutting etc. and makes a smooth light conversion layer, recycling photosensitive type epoxy Material coating ceramic base light turn on layer through exposure, developing layer, shaping after, produce the light conversion layer with installation cavity.2), first fluorescent material and make glass raw material in mix through high-temperature calcination, grinding, polishing, be cut into smooth glass-based flourescent sheet, the silica gel material point being mixed with fluorescent material is again coated in glass-based flourescent sheet, forms the light conversion layer thin slice installing cavity with several.Described light conversion layer is a kind of polymer-based material of semi-solid preparation, and described LED chip is affixed in the installation cavity of described light conversion layer, by solidification in conjunction with LED chip and light conversion layer.Or described light conversion layer is a kind of ceramic base flourescent sheet, described LED chip is affixed in described installation cavity, is solidified in conjunction with described light conversion layer and described LED chip by the glue material of heating transparent.
The volume of described installation cavity is that length, width and height are long-pending.Wherein, the length of the installation cavity of light conversion layer and wide long-pending, namely length and width area be the 1.0-1.2 of the length and width area of LED chip doubly, it is highly no more than 30% of light conversion layer thickness, reaches microminiaturized object.
Wherein, light conversion layer 200 is a kind of prefabricated profiled lamellar materials, can be strip, also can be block.This light conversion layer 200 is photochromic for changing; when such as mounted type LED chip 100 is the LED chip of blue light; light conversion layer thin slice 200 just selects sodium yellow transition material; thus convert blue light to white light; it should be noted that this patent is not limited to blue-light LED chip and this example of sodium yellow transition material, the situation that other light sent by LED chip convert white light to is also protection range of the present utility model.Light conversion layer 200 is made up of a kind of carrier material and the light-converting material be scattered in described carrier material, described light-converting material comprises host material and luminescent material, described host material is made up of one or more in yttrium-aluminium-garnet, Luetcium aluminum garnet, silicate, nitride, fluoride, phosphate, and described luminescent material is the rare earth ion of doping is one or more combined materials in Eu2+, Pr3+, Ce3+, Eu3+, Tb3+, Yb2+, Dy3+.Described carrier material is transparent inorganic ceramic sill, and described inorganic ceramic sill is aluminium oxide, silicon dioxide.This pre-formed concrete production method with light conversion layer 200 can be that inorganic ceramic base alumina powder, the phosphor material powder operation such as sintering, reduction sintering, grinding, cutting under mixing, briquetting, high temperature is processed into laminar light conversion layer, its preparation method is all routine techniques, its material and material are also consistent with existing phosphor powder layer or flourescent sheet, just the utility model is bonded together at prefabricated profiled light conversion layer and LED, instead of on LED chip, form light transformational substance material layer by the mode of some glue.
Embodiment 1
As shown in Figure 1 b, the mounted type LED chip 100 that the present embodiment is selected is flip LED chips, it comprises epitaxial substrate layer 101, grow the n type gallium nitride layer 102 at described epitaxial substrate layer 101 upper surface, grow the luminescent layer 103 at described n type gallium nitride layer 102 portion of upper surface, grow the N-type ohmic contact layer 104 at described n type gallium nitride layer 102 portion of upper surface, grow at the P type gallium nitride layer 105 of described luminescent layer 103 upper surface and the growth P type ohmic contact layer 106 at described P type gallium nitride layer 105 portion of upper surface, at described P type gallium nitride layer 105, P type ohmic contact layer 106, n type gallium nitride layer 102 and N-type ohmic contact layer 104 upper surface are also provided with insulating barrier 107, the insulating barrier 107 of described P type ohmic contact layer 106 upper surface offers the first through hole, the insulating barrier 107 of described N-type ohmic contact layer 104 upper surface offers the second through hole, P electrode bonded layer 108 and N electrode bonded layer 109 is independently provided with at described insulating barrier 107 upper surface, described P electrode bonded layer 108 runs through the first through hole and is electrically connected with P type ohmic contact layer 106, described N electrode bonded layer 109 runs through the second through hole and is electrically connected with N-type ohmic contact layer 104.
The manufacture method of White-light LED chip described in the utility model embodiment, comprises the following steps:
(1) one, is made for changing photochromic prefabricated profiled light conversion layer.
Light conversion layer 200 must first be made, and makes rear etc. to be used.
(2) surface of, described light conversion layer arranges more than one for installing the installation cavity of LED chip.
The surface of the light conversion layer 200 made will be arranged multiple installation cavity for installing LED chip.Location pattern is made in each installation cavity.The location pattern installed in cavity has cross, other shape such as square, circular.As shown in Figure 1, the mounted type LED chip 100 that the present embodiment is selected is flip LED chips, and all down, light conversion layer 200 can't cover P electrode bonded layer 108 and N electrode bonded layer 109 for its P electrode bonded layer 108 and N electrode bonded layer 109.So location pattern only needs shape of slotting, can not perforate, extraneous to prevent the light without light conversion layer conversion from overflowing.
(3), mount in described LED chip to described installation cavity.
As shown in Figure 1, mounted type LED chip is mounted described LED to install in cavity.
(4) in units of each installation cavity being provided with LED chip, cutting described light conversion layer is single White-light LED chip.
After attachment is good, owing to there being a lot of to install cavity in light conversion layer, each installation cavity is conflicted internally and is provided with a LED chip.Light conversion layer is cut into single White-light LED chip, each White-light LED chip, except P electrode bonded layer 108 and N electrode bonded layer 109, is all covered by light conversion layer material.Fig. 4 (b), Fig. 5 (b), Fig. 6 (b), Fig. 7 (b) are respectively each vertical view being provided with the light conversion layer installing cavity, accordingly, Fig. 4 (a) A1-A1 direction sectional view that is Fig. 4 (b); The A2-A2 direction sectional view that Fig. 5 (a) is Fig. 5 (b); The A3-A3 direction sectional view that Fig. 6 (a) is Fig. 6 (b); The A4-A4 direction sectional view that Fig. 7 (a) is Fig. 7 (b).As can be seen from such as Fig. 4, Fig. 5, Fig. 6 and Fig. 7, the present embodiment is carved with the cuttings such as circle, square, cross for location in the bottom of installing cavity.Select the one of surface stick-mounting machine, bonder, upside-down mounting bonding machines to mount, adopt transparent colloid bonding way to realize the physical connection of LED chip 100 and light conversion layer 200.As shown in Figure 8, the direct mounted type adopting cutting machine to carry out cutting into single along dotted line position is with the White-light LED chip of light conversion layer.
This method is different from the mode of traditional fabrication phosphor powder layer completely, the light conversion layer material layer of LED chip is adopted prefabricated thin sheet mode formation-light conversion layer 200, and LED chip is mounted in the installation cavity of light conversion layer 200, light conversion layer 200 surrounds LED chip surrounding and end face, instead of be directly made on LED chip, so just be not easy to cause LED chip bottom electrode to be polluted, and then the welding yield that after improving White-light LED chip, operation is applied.
Embodiment 2
As Fig. 2, Fig. 9, shown in Figure 10 and Figure 11, the present embodiment is only from the different of embodiment 1, White-light LED chip described in the present embodiment is formal dress type LED chip, it comprises epitaxial substrate layer, grow the n type gallium nitride layer at described epitaxial substrate layer upper surface, grow the luminescent layer at described n type gallium nitride layer segment upper surface, at the N-type ohmic contact layer of described n type gallium nitride layer segment upper surface, the P type gallium nitride layer on surface and the P type ohmic contact layer at described P type gallium nitride layer portion of upper surface on the light-emitting layer, one transparency conducting layer covers the P type ohmic contact layer of this formal dress type LED chip, one insulating barrier covers the part surface of this transparency conducting layer, first, two metal pads are separately positioned on described N-type ohmic contact layer and this surface of insulating layer.
The manufacture method of the White-light LED chip of the present embodiment and the difference of embodiment one specific as follows: the surface of described light conversion layer is arranged more than one for install the installation cavity of LED chip be by mould punching mode thus surround multiple LED chips with perforate and install cavity.Aperture pattern is used for the electrode alignment of formal dress type LED chip, facilitates contact conductor.As shown in Fig. 9, Figure 10 and Figure 11, Fig. 9 (b), Figure 10 (b), Figure 11 (b) are respectively each vertical view being provided with the light conversion layer installing cavity, accordingly, Fig. 9 (a) B1-B1 direction sectional view that is Fig. 9 (b); The B2-B2 direction sectional view that Figure 10 (a) is Figure 10 (b); The B3-B3 direction sectional view that Figure 11 (a) is Figure 11 (b).The shape of described location pattern comprise cross, circle or square in one or more combinations.
The attachment of formal dress type LED chip 100 is installed in cavity to described LED, and cut into top and surrounding there is light conversion layer single White-light LED chip can for follow-up.
Embodiment 3
As shown in Fig. 3, Figure 12, Figure 13 and Figure 14, the present embodiment is only from the different of embodiment 1, described White-light LED chip is vertical-type LED chip, and it comprises metallic substrate layer, is bonded in the P type gallium nitride layer of described metallic substrate layer upper surface, grows at the luminescent layer of described P type gallium nitride layer portion of upper surface, the n type gallium nitride layer growing surface on the light-emitting layer and the growth N-type ohmic contact layer at described n type gallium nitride layer segment upper surface.Described N-type ohmic contact layer is provided with metal pad.
The manufacture method of the White-light LED chip of the present embodiment and the difference of embodiment one specific as follows: pasting vertical-type LED chip by mould punching mode surrounds multiple LED chips with perforate and installs cavity.Aperture pattern is used as electrode alignment, facilitates contact conductor.As shown in Figure 12, Figure 13 and Figure 14, Figure 12 (b), Figure 13 (b), Figure 14 (b) are respectively each vertical view being provided with the light conversion layer installing cavity, accordingly, Figure 12 (a) C1-C1 direction sectional view that is Figure 12 (b); The C2-C2 direction sectional view that Figure 13 (a) is Figure 13 (b); The shape of locating pattern described in the C3-C3 direction sectional view that Figure 14 (a) is Figure 14 (b) comprise cross, circle or square in one or more combinations.
Vertical-type LED chip 100 mounts described LED and installs in cavity, and cut into top and surrounding there is light conversion layer single White-light LED chip can for follow-up.
More than describe preferred embodiment of the present utility model in detail, should be appreciated that those of ordinary skill in the art just can make many modifications and variations according to design of the present utility model without the need to creative work.Therefore, all technical staff in the art according to the utility model design on prior art basis by logic analysis, reasoning or according to the available technical scheme of limited experiment, all should among the determined protection range of these claims.
Claims (8)
1. a White-light LED chip, it is characterized in that, comprise a LED chip and for changing photochromic prefabricated profiled light conversion layer, described light conversion layer is provided with the installation cavity of the described LED chip of an accommodation, and four sides of described LED chip and exiting surface are all wrapped up by described installation cavity.
2. White-light LED chip according to claim 1, is characterized in that: the thickness of described light conversion layer is 100 microns-1000 microns.
3. White-light LED chip according to claim 1, is characterized in that: the material of described light conversion layer to comprise in ceramic base, silica gel, epoxy resin or glass one or more.
4. White-light LED chip according to claim 1 and 2, is characterized in that: the length of the installation cavity of described light conversion layer and wide area are the length of LED chip and 1.0-1.2 times of wide area, and it is highly less than or equal to 30% of light conversion layer thickness.
5. White-light LED chip according to claim 1, is characterized in that: described installation cavity inner surface is provided with location pattern, and described White-light LED chip comprises subsides flip type LED chip, pastes formal dress type LED chip and paste vertical-type LED chip; The installation cavity inner surface of described subsides flip type LED chip is provided with cross, square or rounded groove; The installation cavity inner surface of described subsides formal dress type LED chip is provided with square, the circular or criss-cross perforate more than 2; The installation cavity inner surface of described subsides vertical-type LED chip is provided with square, the circular or criss-cross perforate more than 1.
6. White-light LED chip according to claim 5, is characterized in that:
Described White-light LED chip is for pasting flip type LED chip, it comprises epitaxial substrate layer, grow the n type gallium nitride layer at described epitaxial substrate layer upper surface, grow the luminescent layer at described n type gallium nitride layer segment upper surface, grow the N-type ohmic contact layer at described n type gallium nitride layer segment upper surface, the P type gallium nitride layer that growth is surperficial on the light-emitting layer and the P type ohmic contact layer grown at described P type gallium nitride layer portion of upper surface, at described P type gallium nitride layer, P type ohmic contact layer, n type gallium nitride layer and N-type ohmic contact layer upper surface are also provided with insulating barrier, the insulating barrier of described P type ohmic contact layer upper surface offers the first through hole, the insulating barrier of described N-type ohmic contact layer upper surface offers the second through hole, P electrode bonded layer and N electrode bonded layer is independently provided with at described insulating barrier upper surface, described P electrode bonded layer runs through the first through hole and is electrically connected with P type ohmic contact layer, described N electrode bonded layer runs through the second through hole and is electrically connected with N-type ohmic contact layer.
7. White-light LED chip according to claim 5, is characterized in that:
Described White-light LED chip is vertical-type LED chip, it comprises metallic substrate layer, is bonded in the P type gallium nitride layer of described metallic substrate layer upper surface, grows at the luminescent layer of described P type gallium nitride layer portion of upper surface, the n type gallium nitride layer growing surface on the light-emitting layer and the growth N-type ohmic contact layer at described n type gallium nitride layer segment upper surface, and described N-type ohmic contact layer is provided with metal pad.
8. White-light LED chip according to claim 5, is characterized in that:
Described White-light LED chip is formal dress type LED chip, it comprises epitaxial substrate layer, grow the n type gallium nitride layer at described epitaxial substrate layer upper surface, grow the luminescent layer at described n type gallium nitride layer segment upper surface, at the N-type ohmic contact layer of described n type gallium nitride layer segment upper surface, the P type gallium nitride layer on surface and the P type ohmic contact layer at described P type gallium nitride layer portion of upper surface on the light-emitting layer, one transparency conducting layer covers the P type ohmic contact layer of described formal dress type LED chip, one insulating barrier covers the part surface of this transparency conducting layer, first, two metal pads are separately positioned on described N-type ohmic contact layer and this surface of insulating layer.
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| CN201420423607.6U CN204102932U (en) | 2014-07-29 | 2014-07-29 | A kind of White-light LED chip |
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| CN201420423607.6U CN204102932U (en) | 2014-07-29 | 2014-07-29 | A kind of White-light LED chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104167482A (en) * | 2014-07-29 | 2014-11-26 | 晶科电子（广州）有限公司 | White-light LED chip and manufacturing method for white-light LED chip |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104167482A (en) * | 2014-07-29 | 2014-11-26 | 晶科电子（广州）有限公司 | White-light LED chip and manufacturing method for white-light LED chip |
| CN104167482B (en) * | 2014-07-29 | 2018-01-23 | 广东晶科电子股份有限公司 | A kind of White-light LED chip and preparation method thereof |
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Address after: 511458 Nansha District, Guangzhou, South Ring Road, No. 33, No. Patentee after: GUANGDONG APT ELECTRONICS LTD. Address before: 511458 Nansha District, Guangzhou, South Ring Road, No. 33, No. Patentee before: APT (Guangzhou) Electronics Ltd. |